CN103247649A - Method for reducing electrical mutual disturbance of image sensor - Google Patents
Method for reducing electrical mutual disturbance of image sensor Download PDFInfo
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- CN103247649A CN103247649A CN2013101642595A CN201310164259A CN103247649A CN 103247649 A CN103247649 A CN 103247649A CN 2013101642595 A CN2013101642595 A CN 2013101642595A CN 201310164259 A CN201310164259 A CN 201310164259A CN 103247649 A CN103247649 A CN 103247649A
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Abstract
The invention discloses a method for reducing electrical mutual disturbance of an image sensor, which comprises the following steps: before the back thinning process in manufacturing process of the image sensor preparation, depositing a stress layer with a certain tensile stress, allowing the stress layer to be subjected to annealing process, plasma or ultraviolet repair process to obtain larger tensile stress, and applying the tensile stress to a substrate, an epilayer and a transistor. According to the invention, the problem that the response speed of a photodiode is affected due to slower electric transfer caused by STI (Shallow Trench Isolation) compressive stress in the prior art is solved, and meanwhile, the problem that as the compressive stress on the epilayer causes electron mobility to be reduced, and electrical mutual disturbance is generated during second illumination in the prior art is solved, the incidence of electrical mutual disturbance problem is reduced, and the image sensor yield is improved.
Description
Technical field
The present invention relates to a kind of imageing sensor, relate in particular to a kind of method that imageing sensor electricity is disturbed mutually that reduces.
Background technology
CMOS(Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductors (CMOS)) imageing sensor is because its manufacturing process and existing integrated circuits manufacturing process compatibility, compares than original charge coupled device on its performance simultaneously to have many good qualities.Cmos image sensor can integrate drive circuit and pixel, thereby has simplified hardware designs, has also reduced the power consumption of system simultaneously.Cmos image sensor be owing to just can take out the signal of telecommunication when gathering light signal, so processing image information in real time, speed is faster than charge-coupled device imageing sensor.Cmos image sensor has also that low price, bandwidth are big, blur prevention, visit flexibly and advantage such as activity coefficient is bigger.
Traditional active pixel is to adopt photodiode as image sensing device.Common active pixel cell is to be made of three transistors and a photodiode, and this structure is fit to the CMOS manufacturing process of standard.In the spatial distribution design for the doping of photodiode, also need to make the space charge region to avoid the zone that concentrate in complex centre such as crystal defect, to reduce the dark current of pixel.And the size of pixel reduces gradually now, and the trap capacity that photodiode holds electronics also reduces thereupon, so catching with photosignal of light had certain influence.For cmos image sensor two kinds of selections are arranged now, a kind of is to combine with photodiode and 3 transistors of standard CMOS process compatibility, guarantees the area of photodiode with this.Another kind be not with the so-called pinned photodiode of the high trap capacity of having of standard CMOS process compatibility is combined with 4 transistors has a dot structure than low-dark current.
Fig. 1 is the structural representation of cmos image sensor in the prior art; As shown in the figure, the semiconductor structure of cmos image sensor comprises P epitaxial loayer 101, fleet plough groove isolation structure 102, photodiode 103, transfer pipeline 104, floating node 105, reset transistor 106, power interface 107, amplifier transistor and selection pipe (not shown); When illumination, photodiode 103 produces electric charge at the N-place, and at this moment transfer pipeline 104 is closed conditions.Transfer pipeline 104 is opened then, and the electric charge that is stored in the photodiode 103 is transferred to floating node 105, and after the transmission, transfer pipeline 104 is closed, and waits for entering of illumination next time.Charge signal on floating node 105 is used for adjusting amplifier transistor subsequently.After reading, the reset transistor 106 that has reset gate resets to a reference voltage with floating point.
Substrate zone beyond incident light arrives at the space charge region of light sensitive diode, and when producing electron hole pair by photoelectric effect, its electronics also can be diffused into the space charge area edge and be absorbed by the space charge region in substrate.Yet because the no regularity of electrons spread, it may be in substrate and hole-recombination, also may be swept the space charge region of other pixels behind substrate migration one segment distance, thereby causes a kind of disturbing mutually newly between pixel, is referred to as electricity and disturbs mutually.Electricity is disturbed equally mutually can introduce some false signals to pixel, makes the imageing sensor signal to noise ratio reduce the picture quality variation.Under the irradiation of high light, this electricity is disturbed mutually can be very serious, the light induced electron that not only produce outside the light sensitive diode space charge region this moment can spread at substrate, and also can be diffused into again in the substrate by the electronics that the diode space charged region has been collected, and in final image, introduce some defectives, as halation.Reason is pixel, the electronics number that it can hold is limited, in case P-N knot is collected and is broken away from anti-skewness behind enough electronics and enter equilibrium state, its unnecessary electronics will overflow and be diffused in the substrate, and the pixel that has major part to be close to very much absorbs, neighboring pixel brightness is increased, thereby form halation.
Chinese patent (application number: 200910211968) disclose a kind of cmos image sensor that improves the back surface processing that has, be specially and utilize non-activated boron injection zone to catch the electronics that is diffused in the substrate, thereby the electricity that reduces between pixel has been disturbed mutually.
Though the electronics that is diffused in the substrate is caught in this invention by unactivated boron, but because the epitaxial loayer behind the attenuate is very near STI(Shallow Trench Isolation isolation structure of shallow trench), for adopting HDP((High Density Plasma, high-density plasma) method is filled STI, STI can produce compression, electronics transfer in transfer pipeline and other transistors is slowed down, thereby can influence the response speed of photodiode.Owing to the compression that exists in the P type epitaxial loayer, the mobility of electronics also can be reduced, thereby the electron transfer speed that scatters in the substrate is slowed down simultaneously.Before the illumination second time, still have remaining electronics free in epitaxial loayer, can enter the pixel cell that closes on, make the adjacent pixels unit produce electricity and disturb mutually.So, this invention still fails to solve in the prior art because the compression of STI causes the electronics transfer to be slowed down, influence the problem of the response speed in the photodiode, also fail to overcome simultaneously because P type epitaxial loayer exists compression to cause electron mobility to reduce, when carrying out second time illumination, can produce the problem that electricity is disturbed mutually.
Summary of the invention
Problem at above-mentioned existence, the invention provides a kind of method that imageing sensor electricity is disturbed mutually that reduces, to solve in the prior art because the compression of STI causes the electronics transfer to be slowed down, influence the problem of the response speed in the photodiode, also overcome simultaneously in the prior art because P type epitaxial loayer exists compression to cause electron mobility to reduce, when carrying out second time illumination, can produce the problem that electricity is disturbed mutually.
To achieve these goals, the technical scheme taked of the present invention is:
A kind ofly reduce the method that imageing sensor electricity is disturbed mutually, be applied in the technology of shop drawings image-position sensor, provide a described imageing sensor thinning back side preceding semiconductor device, described semiconductor device comprises a substrate, and the upper surface of this substrate is formed with the structure of described imageing sensor, wherein, comprising:
Lower surface in described substrate prepares a stressor layers, to increase the stress of described image sensor architecture;
After removing described stressor layers, continue the reduction process at the described semiconductor device back side.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, described imageing sensor is cmos image sensor.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, also comprise: after the lower surface of described substrate prepares described stressor layers, described stressor layers is carried out annealing process and renovation technique successively, to increase the stress of described stressor layers.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, described stressor layers is silicon nitride layer.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, the thickness of described stressor layers is 300 ~ 600.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, described stressor layers is the tension stress layer.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, the tension stress of described stressor layers is 500MPa ~ 1.2GPa.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, adopt the method for chemical vapor deposition to prepare described stressor layers.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, adopt substep repeatedly sedimentation prepare described stressor layers.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, adopting siliceous gas and nitrogenous gas is that 300 ℃ ~ 500 ℃, pressure are the described stressor layers of preparation under the reaction condition of 50torr ~ 500torr in temperature;
Wherein, described siliceous gas flow is 40 ~ 70sccm, and described nitrogenous gas flow is 80 ~ 120sccm.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, the temperature of carrying out described annealing process is 1000 ℃ ~ 1060 ℃.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, using plasma or ultraviolet light carry out described renovation technique.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, described plasma is hydrogeneous plasma.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, the time of described UV-irradiation is 30 seconds ~ 30 minutes, and the temperature during described UV-irradiation is 200 ℃ ~ 700 ℃.
Above-mentioned reduce the method that imageing sensor electricity is disturbed mutually, wherein, adopt dry etching earlier, adopt wet etching to remove described stressor layers again;
Wherein, adopt the mist contain the mist of fluoroform and oxygen or to contain difluoromethane to carry out described dry etching; Adopt phosphoric acid to carry out described wet etching.
Foregoing invention has following advantage or beneficial effect:
The present invention is by in the technical process of imageing sensor, overleaf before the reduction process, deposit one has the stressor layers of tension stress, and it is annealed, plasma or ultraviolet ray reparation obtain bigger tension stress, make substrate and epitaxial loayer and transistor be subjected to tension stress, thereby overcome in the prior art because the compression of STI causes the electronics transfer to be slowed down, influence the problem of the response speed in the photodiode, also overcome simultaneously in the prior art because P type epitaxial loayer exists compression to cause electron mobility to reduce, when carrying out second time illumination, can produce the problem that electricity is disturbed mutually, and then the raising electron mobility, reduce the generation probability of electricity interference problem, improve the yield of cmos image sensor.
Description of drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, the present invention and feature thereof, profile and advantage will become more apparent.Mark identical in whole accompanying drawings is indicated identical part.Can proportionally not draw accompanying drawing, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of cmos image sensor in the prior art;
Fig. 2 is the schematic flow sheet that reduces the method that imageing sensor electricity disturbs mutually provided by the invention;
Fig. 3 is the structural representation of the semiconductor device before the imageing sensor thinning back side that provides of the embodiment of the invention;
Fig. 4 is the structural representation in back side deposit one stressor layers of the semiconductor device of Fig. 3 that the embodiment of the invention provides;
Fig. 5 is the laying at the removal semiconductor device back side that provides of the embodiment of the invention and the structural representation of substrate;
Fig. 6 is the structural representation after the boron ion implantation technology is carried out at the back side at the device of Fig. 5 that the embodiment of the invention provides.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is done further invention, but not as restriction of the present invention.
Fig. 2 is the schematic flow sheet that reduces the method that imageing sensor electricity disturbs mutually provided by the invention; As shown in the figure, at first provide an imageing sensor thinning back side preceding semiconductor device, this imageing sensor is preferably cmos image sensor, and this semiconductor device comprises a substrate, be preferably P type substrate, be formed with the structure of cmos image sensor at P type substrate, the structure of cmos image sensor comprises epitaxial loayer, be preferably the P epitaxial loayer, in the P epitaxial loayer, be formed with a photodiode, fleet plough groove isolation structure, floating node and power interface, and this cmos image sensor structure also comprises transfer pipeline, reset transistor, amplifier tube and selection pipe; Provided by the inventionly reduce the method that imageing sensor electricity disturbs mutually and comprise:
Utilize the method for chemical vapor deposition at the lower surface of this substrate, it is 300 ℃ ~ 500 ℃ in temperature, as 300 ℃, 350 ℃, 400 ℃, 450 ℃, 500 ℃ etc., pressure is under the condition of 50torr ~ 500torr, as 50torr, 100torr, 200torr, 250torr, 300torr, 400torr, 500torr etc., utilize siliceous gas and nitrogenous gas to react, and siliceous gas flow is 40 ~ 70sccm, as 40 sccm, 50 sccm, 55 sccm, 60 sccm, 70 sccm etc., nitrogenous gas flow is 80 ~ 120 sccm, as 80 sccm, 90 sccm, 100 sccm, 110 sccm, 120 sccm etc., with substep sedimentation deposit one stressor layers repeatedly, wherein, the gas that this is siliceous such as silane, nitrogenous gas such as ammonia etc., and this stressor layers is the tension stress layer, and this stressor layers is silicon nitride layer, the thickness of this stressor layers is 300 ~ 600, as 300,400,500,550,600 etc., tension stress is 500MPa ~ 1.2GPa, as 500 MPa, 550 MPa, 700 MPa, 1 GPa, 1.1 GPa, 1.2 GPa etc.;
Again above-mentioned stressor layers is carried out annealing process, and the temperature when carrying out annealing process is 1000 ℃ ~ 1060 ℃, as 1000 ℃, 1010 ℃, 1020 ℃, 1030 ℃, 1040 ℃, 1050 ℃, 1060 ℃ etc.;
The counter stress layer carries out renovation technique then, and renovation technique adopts hydrogeneous plasma or UV-irradiation; Wherein, hydrogeneous plasma such as hydrogen gas plasma, ammonia plasmas etc.; The time of UV-irradiation is 30 seconds ~ 30 minutes, as 30 seconds, 40 seconds, 60 seconds, 2 minutes, 10 minutes, 15 minutes, 30 minutes etc., and the temperature during UV-irradiation is 200 ℃ ~ 700 ℃, as 200 ℃, 300 ℃, 400 ℃, 500 ℃, 600 ℃, 700 ℃ etc., to improve the tension stress of nitride multilayer silicon membrane layer;
Then adopt earlier dry etching, adopt wet etching to remove stressor layers again, the preferred mist that contains the mist of fluoroform and oxygen or contain difluoromethane that adopts carries out dry etching, further, preferably adopts phosphoric acid to carry out wet etching;
Then again reduction process is carried out at the back side of the semiconductor device after the removal stressor layers, be specially and remove above-mentioned substrate, identical with reduction process of the prior art.
The boron ion implantation technology is carried out at the back side of last semiconductor device after finishing reduction process, make unactivated boron ion trap be diffused into electronics in the substrate, thereby the electricity that reduces between pixel is disturbed mutually.
By in the technical process of imageing sensor, overleaf before the reduction process, deposit one has the stressor layers of tension stress, and annealed technology, plasma or ultraviolet ray reparation obtain bigger tension stress, make substrate and epitaxial loayer and transistor be subjected to tension stress, thereby overcome in the prior art because the compression of STI causes the electronics transfer to be slowed down, influence the problem of the response speed in the photodiode, also overcome simultaneously in the prior art because P type epitaxial loayer exists compression to cause electron mobility to reduce, when carrying out second time illumination, can produce the problem that electricity is disturbed mutually, and then the raising electron mobility, reduce the generation probability of electricity interference problem, improve the yield of imageing sensor.
Embodiment:
Fig. 3 is the structural representation of the semiconductor device of the imageing sensor that provides of the embodiment of the invention; As shown in the figure, imageing sensor is preferably cmos image sensor, semiconductor device before the cmos image sensor thinning back side comprises P type substrate 200, be formed with P epitaxial loayer 201 at P type substrate 200, in P epitaxial loayer 201, be formed with fleet plough groove isolation structure 202, photodiode 203, transfer pipeline 204, floating node 205, reset transistor 206, power interface 207, amplifier tube and selection pipe (not shown); When illumination, photodiode 203 produces electric charge at the N-place, and at this moment transfer pipeline 204 is closed conditions.Transfer pipeline 204 is opened then, and the electric charge that is stored in the photodiode 203 is transferred to floating node 205, and after the transmission, transfer pipeline 204 is closed, and waits for entering of illumination next time.Charge signal on floating node 205 is used for adjusting amplifier transistor subsequently.After reading, the reset transistor 206 that has reset gate resets to a reference voltage with floating point.
Fig. 4 is the structural representation in back side deposit one stressor layers of the semiconductor device of Fig. 3 that the embodiment of the invention provides; As shown in the figure, the back side at semiconductor device, namely utilize the method for chemical vapor deposition at the lower surface of P type substrate 200, it is 300 ℃ ~ 500 ℃ in temperature, as 300 ℃, 330 ℃, 425 ℃, 480 ℃, 500 ℃ etc., pressure is under the condition of 50torr ~ 500torr, as 50torr, 60torr, 150torr, 225torr, 325torr, 475torr, 500torr etc., utilize siliceous gas and nitrogenous gas to react, and siliceous gas flow is 40 ~ 70sccm, as 40 sccm, 45 sccm, 53 sccm, 65 sccm, 70 sccm m etc., nitrogenous gas flow is 80 ~ 120 sccm, as 80 sccm, 85 sccm, 95 sccm, 115 sccm, 120 sccm etc., with substep sedimentation deposit one stressor layers 208 repeatedly, wherein, the gas that this is siliceous such as silane, nitrogenous gas such as ammonia etc., and this stressor layers 208 is silicon nitride layer, this stress thickness layer by layer is 300 ~ 600, as 300,350,450,580,600 etc., this stressor layers is the tension stress layer, and tension stress is 500MPa ~ 1.2GPa, as 500 MPa, 520 MPa, 600 MPa, 1.05GPa, 1.15 GPa, 1.2 GPa etc.
Wherein, after the intact stressor layers 208 of deposit, also need to carry out annealing process and renovation technique, the temperature during annealing process is 1000 ℃ ~ 1060 ℃, as 1000 ℃, 1005 ℃, 1015 ℃, 1025 ℃, 1045 ℃, 1055 ℃, 1060 ℃ etc.; Renovation technique adopts hydrogeneous plasma or UV-irradiation; Wherein, hydrogeneous plasma such as hydrogen gas plasma, ammonia plasmas etc., the time of UV-irradiation is 30 seconds ~ 30 minutes, as 30 seconds, 35 seconds, 50 seconds, 3 minutes, 15 minutes, 25 minutes, 30 minutes etc., and the temperature during UV-irradiation is 200 ℃ ~ 700 ℃, as 200 ℃, 250 ℃, 350 ℃, 550 ℃, 650 ℃, 700 ℃ etc., carry out the loss degree that renovation technique can increase clean hydrogen content in the silicon nitride film layer, to improve the tension stress of nitride multilayer silicon membrane layer.
In addition, adopt renovation technique can make P type substrate 200 and P epitaxial loayer 201 and each transistor be subjected to tension stress; And carry out annealing process overleaf before the reduction process, heat is stopped by thick stressor layers 208, thereby prevented that high temperature is to the diffusion of pixel cell alloy and the influence of logic area back segment metal.
Fig. 5 is the laying at the removal semiconductor device back side that provides of the embodiment of the invention and the structural representation of substrate; As shown in the figure, adopt earlier dry etching, adopt the method for wet etching to remove stressor layers 208 again, in an embodiment of the present invention, the preferred mist that contains the mist of fluoroform and oxygen or contain difluoromethane that adopts carries out dry etching; Further, preferably adopt phosphoric acid to carry out wet etching; Adopt removal technology of the prior art and remove P type substrate 200, repeat no more in this present invention.
Fig. 6 is the structural representation after the boron ion implantation technology is carried out at the back side at the device of Fig. 5 that the embodiment of the invention provides, as shown in the figure, the method that adopts ion to inject is carried out the injection technology of boron ion 209, catch the electronics that is diffused in the P epitaxial loayer 201 by unactivated boron, owing to have tension stress in the P epitaxial loayer 201, make the electronics that is diffused in the P epitaxial loayer 201 to be caught by unactivated boron faster, thereby the electricity that has reduced between pixel is disturbed mutually.
The embodiment of the invention is by in the technical process of preparation imageing sensor, overleaf before the reduction process, deposit one has the stressor layers of tension stress, as silicon nitride layer, and annealed technology, renovation technique is to obtain bigger tension stress, make substrate and epitaxial loayer and transistor be subjected to tension stress, thereby overcome in the prior art because the compression of STI causes the electronics transfer to be slowed down, influence the problem of the response speed in the photodiode, also overcome simultaneously in the prior art because P type epitaxial loayer exists compression to cause electron mobility to reduce, when carrying out second time illumination, can produce the problem that electricity is disturbed mutually, and then improve electron mobility, reduce the generation probability of electricity interference problem, improve the yield of imageing sensor.
In sum, the present invention is by in the technical process of preparation imageing sensor, overleaf before the reduction process, deposit one has the stressor layers of tension stress, and it is annealed, plasma or ultraviolet ray reparation obtain bigger tension stress, make substrate and epitaxial loayer and transistor be subjected to tension stress, thereby overcome in the prior art because the compression of STI causes the electronics transfer to be slowed down, influence the problem of the response speed in the photodiode, also overcome simultaneously in the prior art because P type epitaxial loayer exists compression to cause electron mobility to reduce, when carrying out second time illumination, can produce the problem that electricity is disturbed mutually, and then improve electron mobility, reduce the generation probability of electricity interference problem, improve the yield of imageing sensor.
It should be appreciated by those skilled in the art that those skilled in the art realizing described variation example in conjunction with prior art and above-described embodiment, do not do at this and give unnecessary details.Such variation example does not influence flesh and blood of the present invention, does not repeat them here.
More than preferred embodiment of the present invention is described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, wherein the equipment of not describing in detail to the greatest extent and structure are construed as with the common mode in this area and are implemented; Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or being revised as the equivalent embodiment of equivalent variations, this does not influence flesh and blood of the present invention.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (15)
1. one kind reduces the method that imageing sensor electricity is disturbed mutually, be applied in the technology of shop drawings image-position sensor, provide a described imageing sensor thinning back side preceding semiconductor device, described semiconductor device comprises a substrate, and the upper surface of this substrate is formed with the structure of described imageing sensor, it is characterized in that, comprising:
Lower surface in described substrate prepares a stressor layers, to increase the stress of described image sensor architecture;
After removing described stressor layers, continue the reduction process at the described semiconductor device back side.
2. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that described imageing sensor is cmos image sensor.
3. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that, also comprise: after the lower surface of described substrate prepares described stressor layers, described stressor layers is carried out annealing process and renovation technique successively, to increase the stress of described stressor layers.
4. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that described stressor layers is silicon nitride layer.
5. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that the thickness of described stressor layers is 300 ~ 600.
6. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that described stressor layers is the tension stress layer.
7. as claimed in claim 6ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that the tension stress of described stressor layers is 500MPa ~ 1.2GPa.
8. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that, adopt the method for chemical vapor deposition to prepare described stressor layers.
9. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that, adopt substep repeatedly sedimentation prepare described stressor layers.
10. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that, adopting siliceous gas and nitrogenous gas is that 300 ℃ ~ 500 ℃, pressure are the described stressor layers of preparation under the reaction condition of 50torr ~ 500torr in temperature;
Wherein, described siliceous gas flow is 40 ~ 70sccm, and described nitrogenous gas flow is 80 ~ 120sccm.
11. as claimed in claim 3ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that the temperature of carrying out described annealing process is 1000 ℃ ~ 1060 ℃.
12. as claimed in claim 3ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that using plasma or ultraviolet light carry out described renovation technique.
13. as claimed in claim 12ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that described plasma is hydrogeneous plasma.
14. as claimed in claim 12ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that the time of described UV-irradiation is 30 seconds ~ 30 minutes, the temperature during described UV-irradiation is 200 ℃ ~ 700 ℃.
15. as claimed in claim 1ly reduce the method that imageing sensor electricity is disturbed mutually, it is characterized in that, adopt dry etching earlier, adopt wet etching to remove described stressor layers again;
Wherein, adopt the mist contain the mist of fluoroform and oxygen or to contain difluoromethane to carry out described dry etching; Adopt phosphoric acid to carry out described wet etching.
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