CN103236422B - Intelligent Power Module and manufacture method thereof - Google Patents
Intelligent Power Module and manufacture method thereof Download PDFInfo
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- CN103236422B CN103236422B CN201310109971.5A CN201310109971A CN103236422B CN 103236422 B CN103236422 B CN 103236422B CN 201310109971 A CN201310109971 A CN 201310109971A CN 103236422 B CN103236422 B CN 103236422B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention discloses a kind of Intelligent Power Module and manufacture method thereof, and this Intelligent Power Module comprises a resin scaffold, aluminium base and glass-fiber-plate, and aluminium base and glass-fiber-plate are positioned at same plane parallel arrangement; Aluminium base is formed with insulating barrier, power circuit wiring layer and power device; Glass-fiber-plate is formed with control circuit wiring layer and control device; Encapsulated by sealing resin.The aluminium base of load power device of the present invention and the glass-fiber-plate parallel arrangement of Bearer Control device, when Intelligent Power Module works, the impact of the heat that power device sends on control device significantly reduces, completely avoid the too high control signal caused of Yin Wendu disorderly, effectively ensure that the normal work of Intelligent Power Module.Its manufacture method only needs a simple resinous framework to position, and significantly reduces the manufacture difficulty of Intelligent Power Module, and location, the qualification rate connected can reach 100%, are suitable for volume production.<!--1-->
Description
Technical field
The present invention relates to manufacture field of electronic elements, particularly a kind of Intelligent Power Module and manufacture method thereof.
Background technology
Intelligent Power Module, i.e. IPM(IntelligentPowerModule), be a kind of power drive series products that power electronics and integrated circuit technique are combined.Intelligent Power Module integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.For the Intelligent Power Module of special-purpose, also integrated MCU, MCU can send control signal, make the power component of Intelligent Power Module drive subsequent conditioning circuit work, send the state detection signal of system back to MCU on the other hand.Compared with the scheme of traditional discrete, Intelligent Power Module wins increasing market with its advantage such as high integration, high reliability, be particularly suitable for the frequency converter of drive motors and various inverter, it is frequency control, metallurgical machinery, electric traction, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.For for the Intelligent Power Module in convertible frequency air-conditioner, frequency conversion drive algorithm solidifies substantially, in order to save volume, improving antijamming capability, alleviate peripheral automatically controlled version design efforts would, MCU can be integrated in Intelligent Power Module.
Referring to figs. 1 through the structural representation that Fig. 3, Fig. 1 are Intelligent Power Module in prior art; Fig. 2 is the cross-sectional view of Intelligent Power Module in prior art; Fig. 3 is the internal structure schematic diagram in prior art after Intelligent Power Module removal resin material.Traditional Intelligent Power Module 100 has following structure, and it comprises: resin scaffold 199; First circuit substrate 106; Be located at the first wiring 108 that the insulating barrier 107 on described first circuit substrate 106 surface is formed, the material of described first wiring 108 is generally copper; Be fixed on the power device 104 on described first wiring 108; Connect the metal wire 105 of power device 104 and described first wiring 108; The pin 101 be connected with described first wiring 108; Described power device 104 and described metal wire 105 are covered but at least exposes the insulation colloid 190 of a part for pin 101; Second circuit substrate 206; Be arranged on the second circuit wiring 208 on described second circuit substrate 206, the material of described second circuit wiring 208 is generally copper; Be fixed on the control device 204 in described second circuit wiring 208; Described pin 101 and described second circuit connect up 208 a part be connected.The entirety of described Intelligent Power Module 100 sealed by sealing resin 102, the method for sealing has the injection mould of use thermoplastic resin to be molded and to use the transfer die of thermosetting resin to be molded.Generally by the sealing backside of the first circuit substrate 106, can seal under the back side of described first circuit substrate 106 also can be used to be exposed to outside state.
Because Intelligent Power Module 100 is generally used in driving blower fan, the occasions such as compressor, when Intelligent Power Module 100 works, heating is more serious, although the first circuit substrate 106 is generally aluminum metal substrate, there is certain thermolysis, and Intelligent Power Module 100 generally all can make the back side of described first circuit substrate 106 at described power device 104 place be close to large heating panel to use, but heat still can distribute to described second circuit substrate 206, the actual measurement of implanting thermocouple shows, in real work, described power device 104 upper surface almost reaches identical temperature with described second circuit substrate 206 back side, so described control device 204 meeting work at high temperature, 85 DEG C are no more than as the ideal working temperature of the control devices such as MCU, but the working temperature as IGBT constant power device is more than 100 DEG C, so, the Intelligent Power Module 100 of existing integrated MCU often breaks down because the working temperature of control device is too high, there is the phenomenons such as control signal disorder, makeing mistakes of control signal is easy to cause the conducting simultaneously of Intelligent Power Module 100 upper and lower bridge arm, cause short circuit phenomenon, light then Intelligent Power Module 100 is burnt, heavy then the electric-controlled plate of whole convertible frequency air-conditioner is burnt, if the electric-controlled plate of air-conditioning burns, because ambient temperature during air-conditioning work residing for electric-controlled plate is very high, there is the potential safety hazard causing fire, so, makeing mistakes of control signal is breakneck a kind of failure phenomenon.If reduce MCU temperature by increasing the forms such as radiator fan in MCU present position, or the MCU that also can normally work at using 100 DEG C, turn increase cost, so, although the Intelligent Power Module 100 of integrated MCU has significantly reduce peripheral automatically controlled design difficulty, improve the plurality of advantages such as homogeneity of product, but all fail to be widely used.
In the manufacture method of Intelligent Power Module 100, because the first circuit substrate 106 and second circuit substrate 206 stacked on top of one another, so first the metal wire 105 of the first circuit substrate 106 of bottom will will be positioned at by the operation of wrap insulate colloid 190, power device 104 grade is easily by portion envelops that crushing is bad, make described pin 101 from the first circuit substrate 106 break-through second circuit substrate 206 again, the surface of insulation colloid 190 needs the parallel stacked of as far as possible smooth guarantee first circuit substrate 106 and second circuit substrate 206, and need exactitude position by pin 101 break-through, this all proposes very high requirement to manufacturing process, need to use expensive glue injection equipment to coordinate special moulding process could realize the smooth of colloid 190 surface that insulate, need to use expensive position identifying apparatus and welding equipment, second circuit substrate 206 could be realized to be assemblied on the first circuit substrate 106 by pin 101.This adds the manufacturing cost of Intelligent Power Module 100 undoubtedly, reduces the manufacture qualification rate of Intelligent Power Module 100, adds the difficulty of Intelligent Power Module 100 volume production.
Summary of the invention
Main purpose of the present invention is to provide a kind of Intelligent Power Module and manufacture method thereof, while being intended to the control devices such as integrated MCU, do not increase under cost just makes the control devices such as MCU be operated in low temperature, significantly improve the high temperature reliability of Intelligent Power Module, the Intelligent Power Module of the integrated MCU of effective guarantee can normally work under various operating mode, makes the extensive use of the Intelligent Power Module of integrated MCU become possibility.
The present invention proposes a kind of Intelligent Power Module, and comprise a resin scaffold and the aluminium base and the glass-fiber-plate that are arranged on this resin scaffold surface, described aluminium base and glass-fiber-plate are positioned at same plane parallel arrangement;
Described aluminium base is formed with insulating barrier, this insulating barrier is formed with power circuit wiring layer, this power circuit wiring layer is connected with power device;
Described glass-fiber-plate is formed with control circuit wiring layer, this control circuit wiring layer is connected with control device;
Between described power device, between power device and power circuit wiring layer, and be electrically connected by metal wire between control circuit wiring layer with power circuit wiring layer;
Described control circuit wiring layer and power circuit wiring layer are all configured with pin;
By sealing resin by described aluminium base, insulating barrier, power circuit wiring layer, power device, glass-fiber-plate, control circuit wiring layer, control device, metal wire and pin package, wherein, described pin runs through described sealing resin and stretches out.
Preferably, described resin scaffold is that pond shape is arranged, and has the groove that two are respectively used to accommodating described aluminium base and glass-fiber-plate, described groove respectively with described aluminium base and glass-fiber-plate adaptive.
Preferably, the bottom for the described groove of accommodating described aluminium base is that hollow out is arranged.
Preferably, described Intelligent Power Module also comprises the radiator be arranged between described power device and power circuit wiring layer.
Preferably, described insulating barrier adopt in be filled with Al
2o
3epoxide resin material is made, and the thermal conductivity of described insulating barrier is 2.0W/mk.
Preferably, described resin scaffold adopts and is filled with SiO
2thermosetting material and make.
Preferably, described aluminium base adopts the aluminium of 1100 or 5052 types to make.
The present invention also proposes a kind of manufacture method of Intelligent Power Module further, comprising:
Form insulating barrier and power circuit wiring layer successively on aluminium base one surface, described power circuit wiring layer arranges power device and pin, and make described power circuit wiring layer by metal wire, be electrically connected between power device and pin, form power cell;
At glass-fiber-plate surface formation control circuit-wiring layer, described control circuit wiring layer arranges control device and pin, formation control unit;
To the interconnective described power cell of metal wire loading resin scaffold side by side parallel with control unit be passed through, and encapsulated by sealing resin.
Preferably, the step of described formation power cell specifically comprises:
Described insulating barrier is formed on the surface at described aluminium base one;
The surface of described insulating barrier forms Copper Foil;
Etch described Copper Foil, form described power circuit wiring layer;
Described power circuit wiring layer arranges described power device and pin;
Make described power circuit wiring layer by metal wire, be electrically connected between power device and pin, form power cell.
Preferably, the step of described formation control unit specifically comprises:
Copper Foil is formed on the surface at described glass-fiber-plate;
Etch described Copper Foil, form described control circuit wiring layer;
Control circuit wiring layer arranges described control device and pin, formation control unit.
The aluminium base of Intelligent Power Module load power device of the present invention and the glass-fiber-plate parallel arrangement of Bearer Control device, when Intelligent Power Module works, the impact of the heat that power device sends on control device significantly reduces, compared with traditional design, under control device is operated in lower temperature, completely avoid the too high control signal caused of Yin Wendu disorderly, effectively ensure that the normal work of Intelligent Power Module.Its manufacture method reduces first by insulation colloid protection power device part; the operation of power cell and control unit is connected again by upper and lower contraposition; a simple resinous framework is only needed to position; because power cell and control unit are level connection joints; therefore the required precision for metal wire is not high, just significantly reduces the manufacture difficulty of Intelligent Power Module yet, and need not buy expensive equipment can realize; location, the qualification rate connected can reach 100%, are suitable for volume production.
Accompanying drawing explanation
Fig. 1 is the structural representation of Intelligent Power Module in prior art;
Fig. 2 is the cross-sectional view of Intelligent Power Module in prior art;
Fig. 3 is the internal structure schematic diagram in prior art after Intelligent Power Module removal resin material;
Fig. 4 is the cross-sectional view of Intelligent Power Module of the present invention;
Fig. 5 is the internal structure schematic diagram after Intelligent Power Module of the present invention removes resin material;
Fig. 6 is the schematic flow sheet of the manufacture method of Intelligent Power Module of the present invention;
Fig. 7 is the schematic flow sheet forming power cell in the manufacture method of Intelligent Power Module of the present invention;
Fig. 8 is the schematic flow sheet of formation control unit in the manufacture method of Intelligent Power Module of the present invention.
The realization of the object of the invention, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
Be described further with regard to technical scheme of the present invention below in conjunction with drawings and the specific embodiments.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The present invention proposes a kind of Intelligent Power Module.
With reference to the cross-sectional view that Fig. 4 and Fig. 5, Fig. 4 are Intelligent Power Module of the present invention; Fig. 5 is the internal structure schematic diagram after Intelligent Power Module of the present invention removes resin material.
In embodiments of the present invention, this Intelligent Power Module comprises a resin scaffold 30 and the aluminium base 16 be arranged on this resin scaffold 30 and glass-fiber-plate 26, and this aluminium base 16 and glass-fiber-plate 26 are positioned at same plane parallel arrangement on resin scaffold 30.The upper surface of this aluminium base 16 is formed with insulating barrier 17, and this insulating barrier 17 is formed with power circuit wiring layer 18, and this power circuit wiring layer 18 is connected with power device 14, and this power device 14 can be the active elements such as IGBT pipe or FRD pipe.
Be formed with control circuit wiring layer 28 on the surface of glass-fiber-plate 26, this control circuit wiring layer 28 is connected with control device 24, this control device 24 can be the active elements such as HVIC or MCU, also adopts the passive component such as electric capacity, resistance.If required circuit is complicated, can at glass-fiber-plate 26 upper and lower surface all formation control circuit-wiring layer 28, the middle control circuit wiring layer 28 being connected upper and lower surface by through hole.The present embodiment is only described for the technical scheme of glass-fiber-plate 26 upper surface formation control circuit-wiring layer 28.
Make between each power device 14, between each control device 24 by metal wire 15, power device 14 and power circuit wiring layer 18, control device 24 and control circuit wiring layer 28, and formed between control circuit wiring layer 28 with power circuit wiring layer 18 and be a little connected.This metal wire 15 is preferably aluminum steel, gold thread or copper cash.
This control circuit wiring layer 28 and power circuit wiring layer 18 are all configured with pin 11, for carrying out input and/or the output of signal with outside.
Control circuit wiring layer 28 and power circuit wiring layer 18 also can be provided with pad 13, and this pad 13, for connecting pin 11 and control circuit wiring layer 28 and power circuit wiring layer 18, also can be used for connection control circuit-wiring layer 28 and power circuit wiring layer 18.Pin 11 be fixed on be located at least one edge of aluminium base 16 pad 13 on and at least one edge of glass-fiber-plate 26 pad 13 on.Pin 11 is welded by conductive adhesives such as scolding tin with pad 13.If the distance between pad 13 is shorter, such as is not more than 1mm, and the difference in height of two pads 13 is less, such as is not more than 1mm, also can consider to use softer gold thread as metal wire 15.The metal that pin 11 generally adopts aluminium or copper etc. to have certain degree of hardness is made.
By sealing resin 12, aluminium base 16, insulating barrier 17, power circuit wiring layer 18, power device 14, glass-fiber-plate 26, control circuit wiring layer 28, control device 24, metal wire 15 and pin 11 are encapsulated, wherein, this pin 11 runs through sealing resin 12 and stretches out, the other end that pin 11 is connected with control circuit wiring layer 28 and power circuit wiring layer 18 is relatively exposed outside sealing resin 12, carries out input and/or the output of signal with outside.
The aluminium base 16 of Intelligent Power Module load power device 14 of the present invention and glass-fiber-plate 26 parallel arrangement of Bearer Control device 24, when Intelligent Power Module works, the impact of the heat that power device 14 sends on control device 24 significantly reduces, compared with traditional design, under control device 24 is operated in lower temperature, completely avoid the too high control signal caused of Yin Wendu disorderly, effectively ensure that the normal work of Intelligent Power Module.
In the above-described embodiments, resin scaffold 30 is arranged in pond shape, and its inside has two grooves, and two grooves are respectively used to accommodating aluminium base 16 and glass-fiber-plate 26, and two grooves are adaptive with the size and shape of aluminium base 16 and glass-fiber-plate 26 respectively.Arranging of groove can be carried out effectively accurately fixing to aluminium base 16 and glass-fiber-plate 26 on the one hand, is convenient to volume production; Facilitate the resin 12 that is filled with a sealing on the other hand to encapsulate.Aluminium base to be contained in this groove and to be completely in sealing resin 12, due to the electrical insulating material that sealing resin 12 is good, so aluminium base 16 is reduced greatly by the risk that external signal is disturbed, enhance the antijamming capability of Intelligent Power Module, improve the stability of Intelligent Power Module work.
In the above-described embodiments, the bottom for the groove of accommodating aluminium base 16 is that hollow out is arranged.Aluminium base 16 lower surface can not be sealed completely by resin scaffold 30, because the thermal conductivity of resin scaffold 30 is far below aluminium, therefore improve aluminium base 16 radiating effect, further avoid the too high control signal caused of Yin Wendu disorderly.
Based on above-described embodiment, this Intelligent Power Module also comprises radiator (not shown), and this radiator is arranged between power device 14 and power circuit wiring layer 18, and this radiator preferably adopts copper material to make.The setting of this radiator can be dispelled the heat to power device 14, improves the heat-sinking capability of Intelligent Power Module further.
In the above-described embodiments, this insulating barrier 17 adopts and fills Al at resin material middle and high concentrations such as epoxy resin
2o
3and make, owing to being filled with Al
2o
3effectively can improve the thermal conductivity of insulating barrier 17, the heat-sinking capability of Intelligent Power Module can be improved.The thermal conductivity of insulating barrier 17 is preferably 2.0W/mk, matching, preventing insulating barrier 17 to come off because being heated with the coefficient of expansion and sealing resin 12 that ensure insulating barrier 17.
In the above-described embodiments, this resin scaffold 30 preferably adopts and is filled with SiO
2thermosetting material and make.This aluminium base preferably adopts the aluminium of 1100 or 5052 types to make.Described control circuit wiring layer 28 and power circuit wiring layer 18 are preferably made of copper.
The present invention also proposes a kind of manufacture method of Intelligent Power Module further.
With reference to the schematic flow sheet that Fig. 6, Fig. 6 are the manufacture method of Intelligent Power Module of the present invention.
In embodiments of the present invention, the manufacture method of this Intelligent Power Module comprises:
Step S10, insulating barrier and power circuit wiring layer is formed successively on aluminium base one surface, described power circuit wiring layer arranges power device and pin, and by metal wire, described power circuit wiring layer, power device and pin is electrically connected, form power cell;
Step S20, at glass-fiber-plate surface formation control circuit-wiring layer, described control circuit wiring layer arranges control device and pin, formation control unit;
Step S30, will be passed through the interconnective described power cell of metal wire loading resin scaffold side by side parallel with control unit, and encapsulated by sealing resin.
First, resin scaffold is placed on ad-hoc location, if resin scaffold is closed type, preferably smear at the whole bottom even of resin scaffold the heat sink material that silica gel etc. increases contact, if resin scaffold is hollow type, then also can consider to smear silica gel in the position of non-hollow out, the aluminium base of guaranteed output unit can fully dispel the heat.The height that silica gel is smeared is 50 μm.In addition, in order to the glass-fiber-plate of the aluminium base and control unit that make power cell can accurately be located on resin scaffold, can consider to form reference column on resin scaffold, aluminium base and glass-fiber-plate form location hole.In resin scaffold, place power cell and control unit respectively, and make power cell parallel with control unit side by side, be positioned at same plane.When picking and placeing power cell and control unit, note the metal wire not touching power cell and control unit, after power cell and control unit are placed into resin scaffold, use pressuring flat device, by the place being pressed in power cell and control unit and not having power device, control device, metal wire and pin, to guarantee that power cell fully contacts with resin scaffold with the bottom of control unit.Place after stablizing, by nation's alignment, make to set up electrical connection between pad, the signal input/output line of metal wire after nation is fixed, make power device and control device realize communicating.
Then, toast the resin scaffold loading power cell and control unit in oxygen-free environment, baking time should not be less than 2 hours, and baking temperature is preferably 125 DEG C.The object of its baking removes the aqueous vapor of power cell and control unit surface attachment.Oxygen-free environment is used to be because in a heated condition, in order to prevent making the electric component surface oxidations such as power device.Resin scaffold is put into assigned address, and input rifle injects sealing resin to resin scaffold, and sealing resin is liquid epoxy resin under can selecting normal temperature, also can select the silica gel reviewed down as fluidised form.Speeds control during injection, under the prerequisite guaranteeing resin evenly diffusion in support, be not more than 1mm/s with the lifting height of sealing resin in resin scaffold to be advisable, the final height that sealing resin injects is under the prerequisite on the surface of complete sealing metal line and all power devices and control device, the sealing resin of the general 1mm height that reinjects.At this, except pin exposes except sealing resin, other elements all seal by sealing resin.After injection completes, resin scaffold is put into baking oven, be heated to 150 DEG C, be not less than 30 minutes heating time.After cooling, sealing resin solid state.
The manufacture method of Intelligent Power Module of the present invention reduces first by insulation colloid protection power device part; the operation of power cell and control unit is connected again by upper and lower contraposition; a simple resinous framework is only needed to position; because power cell and control unit are level connection joints; therefore the required precision for metal wire is not high; also the manufacture difficulty of Intelligent Power Module is just significantly reduced; expensive equipment need not be bought can realize; location, the qualification rate connected can reach 100%, are suitable for volume production.
Reference Fig. 7, Fig. 7 are the schematic flow sheet making power cell in the manufacture method of Intelligent Power Module of the present invention.
In the above-described embodiments, the step S10 making power model specifically comprises:
Step S11, forms described insulating barrier on the surface at described aluminium base one;
Circuit layout as required prepares sizeable aluminium base, the size of 104mm × 30mm can be chosen for general Intelligent Power Module, the formation of sizeable aluminium base can be formed by directly carrying out the mode such as die-cut to the aluminium of 1m × 1m, also the aluminium by first 1m × 1m forms V groove, and the mode then sheared is formed.Corrosion protection process is carried out to the two sides of aluminium base.The surface of at least one side of aluminium base forms insulating barrier.
Step S12, the surface of described insulating barrier forms Copper Foil;
At the surface mount of insulating barrier for making the Copper Foil of power circuit wiring layer.
Step S13, etches described Copper Foil, forms described power circuit wiring layer;
Etch Copper Foil, remove Copper Foil partly, form power circuit wiring layer, this power circuit wiring layer refers to the Copper Foil of given shape.
Step S14, described power circuit wiring layer arranges described power device and pin;
Tin cream is smeared at the ad-hoc location of power circuit wiring layer, especially, need to smear tin cream on pad, power device is directly installed on the assigned position of power circuit wiring layer, carrier is made by aluminium or synthesis stone etc., pin is fixed on pad correspondence position, by modes such as high temperature refluxes, tin cream is solidified.Backflow maximum temperature should be greater than 200 DEG C, is preferably 225 DEG C.
Step S15, makes described power device and the electrical connection of power circuit wiring layer by metal wire, forms power cell.
Utilize metal wire to carry out nation's line connection to power device and power circuit wiring layer, finally form power cell.
Reference Fig. 8, Fig. 8 are the schematic flow sheet making control unit in the manufacture method of Intelligent Power Module of the present invention.
In the above-described embodiments, the step S20 making control module specifically comprises:
Step S21, forms Copper Foil on the surface at described glass-fiber-plate;
Circuit layout as required prepares sizeable glass-fiber-plate, can choose the size of 104mm × 90mm for general Intelligent Power Module.The formation of sizeable aluminium base can be formed by directly carrying out to the glass fiber plate of 1m × 1m the mode of fractureing etc., and the aluminium also by first 1m × 1m forms V groove, and the mode then sheared is formed.The surface of glass-fiber-plate is pasted the Copper Foil for making control circuit wiring layer.
Step S22, etches described Copper Foil, forms described control circuit wiring layer;
Etch Copper Foil, remove Copper Foil partly, formation control circuit-wiring layer, this control circuit wiring layer refers to the Copper Foil of given shape.According to the needs of circuit function, also can on the two sides of glass-fiber-plate all formation control circuit-wiring layer, and by through hole, the control circuit wiring layer of upper and lower surface is connected.
Step S23, control circuit wiring layer arranges described control device and pin, formation control unit.
Tin cream is smeared at the ad-hoc location of control circuit wiring layer, especially, need to smear tin cream on pad, control device is directly installed on the assigned position of control circuit wiring layer, carrier is made by aluminium or synthesis stone etc., pin is fixed on pad correspondence position, by modes such as high temperature refluxes, tin cream is solidified.Backflow maximum temperature should be greater than 200 DEG C, is preferably 225 DEG C.If control device is wafer, need to utilize metal wire to carry out nation's line connection to control device and control circuit wiring layer, final formation control unit.
The foregoing is only the preferred embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every equivalent structure transformation utilizing specification of the present invention and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. an Intelligent Power Module, is characterized in that, comprise a resin scaffold and the aluminium base and the glass-fiber-plate that are arranged on this resin scaffold surface, described aluminium base and glass-fiber-plate are positioned at same plane parallel arrangement;
Described aluminium base is formed with insulating barrier, this insulating barrier is formed with power circuit wiring layer, this power circuit wiring layer is connected with power device;
Described glass-fiber-plate is formed with control circuit wiring layer, this control circuit wiring layer is connected with control device;
Between described power device, between power device and power circuit wiring layer, and be electrically connected by metal wire between control circuit wiring layer with power circuit wiring layer;
Described control circuit wiring layer and power circuit wiring layer are all configured with pin;
By sealing resin by described aluminium base, insulating barrier, power circuit wiring layer, power device, glass-fiber-plate, control circuit wiring layer, control device, metal wire and pin package, wherein, described pin runs through described sealing resin and stretches out, for carrying out input and/or the output of signal with outside.
2. Intelligent Power Module as claimed in claim 1, is characterized in that, described resin scaffold be that pond shape is arranged, and has the groove that two are respectively used to accommodating described aluminium base and glass-fiber-plate, described groove respectively with described aluminium base and glass-fiber-plate adaptation.
3. Intelligent Power Module as claimed in claim 2, is characterized in that, the bottom for the described groove of accommodating described aluminium base is that hollow out is arranged.
4. Intelligent Power Module as claimed in claim 3, is characterized in that, also comprise the radiator be arranged between described power device and power circuit wiring layer.
5., as the Intelligent Power Module in Claims 1-4 as described in any one, it is characterized in that, described insulating barrier adopt in be filled with Al
2o
3epoxide resin material make, the thermal conductivity of described insulating barrier is 2.0W/mk.
6. as the Intelligent Power Module in Claims 1-4 as described in any one, it is characterized in that, described resin scaffold adopts and is filled with SiO
2thermosetting material and make.
7. as the Intelligent Power Module in Claims 1-4 as described in any one, it is characterized in that, described aluminium base adopts the aluminium of 1100 or 5052 types to make.
8. a manufacture method for Intelligent Power Module, is characterized in that, comprising:
Form insulating barrier and power circuit wiring layer successively on aluminium base one surface, described power circuit wiring layer arranges power device and pin, and make described power circuit wiring layer by metal wire, be electrically connected between power device and pin, form power cell;
At glass-fiber-plate surface formation control circuit-wiring layer, described control circuit wiring layer arranges control device and pin, formation control unit;
To the interconnective described power cell of metal wire loading resin scaffold side by side parallel with control unit be passed through, and encapsulated by sealing resin.
9. the manufacture method of Intelligent Power Module as claimed in claim 8, it is characterized in that, the step of described formation power cell specifically comprises:
Described insulating barrier is formed on the surface at described aluminium base one;
The surface of described insulating barrier forms Copper Foil;
Etch described Copper Foil, form described power circuit wiring layer;
Described power circuit wiring layer arranges described power device and pin;
Make described power circuit wiring layer by metal wire, be electrically connected between power device and pin, form power cell.
10. the manufacture method of Intelligent Power Module as claimed in claim 8, it is characterized in that, the step of described formation control unit specifically comprises:
Copper Foil is formed on the surface at described glass-fiber-plate;
Etch described Copper Foil, form described control circuit wiring layer;
Control circuit wiring layer arranges described control device and pin, formation control unit.
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| CN104882426A (en) * | 2014-02-27 | 2015-09-02 | 西安永电电气有限责任公司 | Plastic packaging type IPM module stacking structure |
| CN104766842B (en) * | 2015-03-23 | 2017-09-08 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN107045991A (en) * | 2017-03-13 | 2017-08-15 | 广东美的制冷设备有限公司 | Circuit module and its manufacture method |
| CN107393886A (en) * | 2017-08-24 | 2017-11-24 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN107481978A (en) * | 2017-08-24 | 2017-12-15 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN108735707B (en) * | 2018-04-18 | 2020-11-06 | 华为技术有限公司 | Ceramic substrate, preparation method of ceramic substrate and power module |
| CN110601552A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | High-integration intelligent power module and electrical equipment |
| CN110594989A (en) * | 2018-06-13 | 2019-12-20 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110753486B (en) * | 2018-07-24 | 2024-02-20 | 广东美的制冷设备有限公司 | High-integration intelligent power module and air conditioner |
| CN109994463A (en) * | 2019-04-29 | 2019-07-09 | 广东美的制冷设备有限公司 | Intelligent power module and preparation method thereof, air conditioner |
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