CN103236422A - Intelligent power module and manufacturing method thereof - Google Patents
Intelligent power module and manufacturing method thereof Download PDFInfo
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- CN103236422A CN103236422A CN2013101099715A CN201310109971A CN103236422A CN 103236422 A CN103236422 A CN 103236422A CN 2013101099715 A CN2013101099715 A CN 2013101099715A CN 201310109971 A CN201310109971 A CN 201310109971A CN 103236422 A CN103236422 A CN 103236422A
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- circuit wiring
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- intelligent power
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
The invention discloses an intelligent power module and a manufacturing method thereof. The intelligent power module comprises a resin support, an aluminum base plate and a fiberglass plate, the aluminum base plate and the fiberglass plate are disposed in a same plane and are distributed in a paralleling manner. An insulating layer, a power circuit wiring layer and a power device are formed on the aluminum base. A control circuit wiring layer and a control device are formed on the fiberglass plate. The intelligent power module is packaged through sealing resin. The aluminum base plate for bearing the power device and the fiberglass plate for bearing the control device are distributed in a paralleling manner, when the intelligent power module operates, influence of the heat from the power device to the control device reduces greatly, control signal confusion caused by overhigh temperature is completely avoided, and normal operation of the intelligent power module is effectively guaranteed. Positioning can be achieved only by using a simple resin frame, manufacturing difficulty of the intelligent power module is greatly lowered, qualification rate of positioning and connecting can reach 100 percent, and accordingly the intelligent power module is suitable for mass production.
Description
Technical field
The present invention relates to manufacture field of electronic elements, particularly a kind of Intelligent Power Module and manufacture method thereof.
Background technology
Intelligent Power Module, i.e. IPM(Intelligent Power Module), be a kind of power drive series products with power electronics and integrated circuit technique combination.Intelligent Power Module integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and failure detector circuit such as overheated.For the Intelligent Power Module of special-purpose, also can integrated MCU, MCU sends control signal, makes the power component of Intelligent Power Module drive subsequent conditioning circuit work, sends the state detection signal of system back to MCU on the other hand.Compare with the scheme that tradition is discrete, Intelligent Power Module wins increasing market with advantages such as its high integration, high reliability, be particularly suitable for frequency converter and the various inverter of drive motors, it is frequency control, metallurgical machinery, electric traction, servo-drive, a kind of desirable power electronic device of frequency-conversion domestic electric appliances.For the Intelligent Power Module that is used for convertible frequency air-conditioner, the frequency conversion drive algorithm solidifies substantially, in order to save volume, improve antijamming capability, to alleviate peripheral automatically controlled version design work amount, MCU can be integrated in the Intelligent Power Module.
Referring to figs. 1 through Fig. 3, Fig. 1 is the structural representation of Intelligent Power Module in the prior art; Fig. 2 is the cross-sectional view of Intelligent Power Module in the prior art; Fig. 3 is the internal structure schematic diagram behind the Intelligent Power Module removal resin material in the prior art.Traditional Intelligent Power Module 100 has following structure, and it comprises: resin support 199; First circuit substrate 106; Be located at first wiring 108 that described first circuit substrate, 106 lip-deep insulating barriers 107 form, the material of described first wiring 108 is generally copper; Be fixed on the power device 104 on described first wiring 108; The metal wire 105 that connects power device 104 and described first wiring 108; The pin 101 that is connected with described first wiring 108; Described power device 104 and described metal wire 105 covered but expose the insulation colloid 190 of the part of pin 101 at least; Second circuit substrate 206; Be arranged on the second circuit wiring 208 on the described second circuit substrate 206, the material of described second circuit wiring 208 is generally copper; Be fixed on the control device 204 in the described second circuit wiring 208; Described pin 101 is connected with the part of described second circuit wiring 208.With whole sealed resin 102 sealings of described Intelligent Power Module 100, the method for sealing has the injection mould that uses thermoplastic resin transmission mould molded and the use thermosetting resin molded.Generally can be with the sealing backside of first circuit substrate 106, also can use the back side of described first circuit substrate 106 to be exposed under the outside state and seal.
Because Intelligent Power Module 100 general uses are driving blower fan, occasions such as compressor, heating is more serious during Intelligent Power Module 100 work, though first circuit substrate 106 is generally the aluminum metal substrate, certain thermolysis is arranged, and Intelligent Power Module 100 generally all can make the back side of described first circuit substrate 106 at described power device 104 places be close to big heating panel to use, but heat still can distribute to described second circuit substrate 206, the actual measurement of implanting thermocouple shows, in the real work, described power device 104 upper surfaces and described second circuit substrate 206 back sides almost reach identical temperature, so described control device 204 meeting work at high temperature, as the ideal operation temperature of control devices such as MCU, be no more than 85 ℃, but the working temperature as IGBT constant power device is more than 100 ℃, so, the Intelligent Power Module 100 of existing integrated MCU often breaks down because the working temperature of control device is too high, phenomenons such as control signal disorder appear, makeing mistakes of control signal is easy to cause the conducting simultaneously of Intelligent Power Module 100 upper and lower bridge arms, cause short circuit phenomenon, Intelligent Power Module 100 is burnt, heavy then the automatically controlled plate of whole convertible frequency air-conditioner is burnt, if the automatically controlled plate of air-conditioning burns, because the residing ambient temperature of automatically controlled plate is very high during air-conditioning work, the potential safety hazard that causes fire is arranged, so makeing mistakes of control signal is breakneck a kind of failure phenomenon.If reduce the MCU temperature by increase forms such as radiator fan in the MCU present position, perhaps use under 100 ℃ also can operate as normal MCU, increased cost again, so, though having, the Intelligent Power Module 100 of integrated MCU significantly reduces peripheral automatically controlled design difficulty, improve plurality of advantages such as homogeneity of product, but all fail to be used widely.
On the manufacture method of Intelligent Power Module 100, because first circuit substrate 106 and second circuit substrate 206 stacked on top of one another, so at first will will be positioned at the metal wire 105 of first circuit substrate 106 of bottom by the operation of wrap insulate colloid 190, power device 104 grades are easily by the bad part parcel of crushing, make described pin 101 from first circuit substrate, 106 break-through second circuit substrates 206 again, need try one's best and smoothly could guarantee the parallel stacked of first circuit substrate 106 and second circuit substrate 206 in the surface of insulation colloid 190, and need accurate contraposition by pin 101 break-through, this has all proposed very high requirement to manufacturing process, need to use expensive injecting glue equipment to cooperate special moulding process could realize the smooth of insulation colloid 190 surfaces, need to use expensive position identifying apparatus and welding equipment, could realize second circuit substrate 206 is assemblied on first circuit substrate 106 by pin 101.The manufacturing cost that this has increased Intelligent Power Module 100 has undoubtedly reduced the manufacturing qualification rate of Intelligent Power Module 100, has increased the difficulty of Intelligent Power Module 100 volume productions.
Summary of the invention
Main purpose of the present invention provides a kind of Intelligent Power Module and manufacture method thereof, when being intended to control devices such as integrated MCU, not increasing cost just makes control devices such as MCU be operated under the low temperature, significantly improve the high temperature reliability of Intelligent Power Module, the Intelligent Power Module that effectively guarantees integrated MCU can both operate as normal under various operating modes, makes the extensive use of the Intelligent Power Module of integrated MCU become possibility.
The present invention proposes a kind of Intelligent Power Module, comprises a resin support and the aluminium base and the glass plate that are arranged on this resin rack surface, and described aluminium base and glass plate are positioned at same plane parallel arrangement;
Be formed with insulating barrier on the described aluminium base, be formed with the power circuit wiring layer on this insulating barrier, be connected with power device on this power circuit wiring layer;
Be formed with the control circuit wiring layer on the described glass plate, be connected with control device on this control circuit wiring layer;
Between the described power device, between power device and the power circuit wiring layer, and be electrically connected by metal wire between control circuit wiring layer and the power circuit wiring layer;
All dispose pin on described control circuit wiring layer and the power circuit wiring layer;
With described aluminium base, insulating barrier, power circuit wiring layer, power device, glass plate, control circuit wiring layer, control device, metal wire and pin package, wherein, described pin runs through described sealing resin and stretches out by sealing resin.
Preferably, described resin support is pond shape setting, and has two grooves that are respectively applied to ccontaining described aluminium base and glass plate, and described groove is adaptive with described aluminium base and glass plate respectively.
Preferably, the bottom that is used for the described groove of ccontaining described aluminium base is the hollow out setting.
Preferably, described Intelligent Power Module also comprises the radiator that is arranged between described power device and the power circuit wiring layer.
Preferably, described insulating barrier adopt in be filled with Al
2O
3Epoxide resin material is made, and the thermal conductivity of described insulating barrier is 2.0W/mk.
Preferably, described resin support adopts and is filled with SiO
2The thermohardening material and make.
Preferably, described aluminium base adopts the aluminium of 1100 or 5052 types to make.
The present invention further also proposes a kind of manufacture method of Intelligent Power Module, comprising:
Form insulating barrier and power circuit wiring layer successively on aluminium base one surface, at described power circuit wiring layer power device and pin are set, and make between described power circuit wiring layer, power device and the pin by metal wire and to be electrically connected, form power cell;
Form the control circuit wiring layer on glass plate surface, at described control circuit wiring layer control device and pin are set, form control unit;
Will be by the parallel resin support of packing into side by side with control unit of the interconnective described power cell of metal wire, and encapsulate by sealing resin.
Preferably, the step of described formation power cell specifically comprises:
Form described insulating barrier on described aluminium base one surface;
Surface at described insulating barrier forms Copper Foil;
The described Copper Foil of etching forms described power circuit wiring layer;
At described power circuit wiring layer described power device and pin are set;
Make between described power circuit wiring layer, power device and the pin by metal wire to be electrically connected, form power cell.
Preferably, the step of described formation control unit specifically comprises:
Form Copper Foil on described glass plate surface;
The described Copper Foil of etching forms described control circuit wiring layer;
At the control circuit wiring layer described control device and pin are set, form control unit.
The glass plate parallel arrangement of the aluminium base of Intelligent Power Module load power device of the present invention and bearer controller spare, when Intelligent Power Module is worked, the heat that power device sends significantly reduces the influence of control device, compare with traditional design, control device is operated under the lower temperature, avoid the too high control signal disorder that causes of Yin Wendu fully, effectively guaranteed the operate as normal of Intelligent Power Module.Its manufacture method has reduced first with insulation colloid protection power device part; pass through the operation that contraposition up and down connects power cell and control unit again; only need a simple resinous framework to position; because power cell is that level is connected with control unit; therefore not high for the required precision of metal wire, also just significantly reduced the manufacture difficulty of Intelligent Power Module, need not buy expensive equipment and can realize; location, the qualification rate that connects can reach 100%, are suitable for volume production.
Description of drawings
Fig. 1 is the structural representation of Intelligent Power Module in the prior art;
Fig. 2 is the cross-sectional view of Intelligent Power Module in the prior art;
Fig. 3 is the internal structure schematic diagram behind the Intelligent Power Module removal resin material in the prior art;
Fig. 4 is the cross-sectional view of Intelligent Power Module of the present invention;
Fig. 5 removes internal structure schematic diagram behind the resin material for Intelligent Power Module of the present invention;
Fig. 6 is the schematic flow sheet of the manufacture method of Intelligent Power Module of the present invention;
Fig. 7 is for forming the schematic flow sheet of power cell in the manufacture method of Intelligent Power Module of the present invention;
Fig. 8 is for forming the schematic flow sheet of control unit in the manufacture method of Intelligent Power Module of the present invention.
The realization of the object of the invention, functional characteristics and advantage will be in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
Be described further with regard to technical scheme of the present invention below in conjunction with drawings and the specific embodiments.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.
The present invention proposes a kind of Intelligent Power Module.
With reference to Fig. 4 and Fig. 5, Fig. 4 is the cross-sectional view of Intelligent Power Module of the present invention; Fig. 5 removes internal structure schematic diagram behind the resin material for Intelligent Power Module of the present invention.
In embodiments of the present invention, this Intelligent Power Module comprises a resin support 30 and the aluminium base 16 and the glass plate 26 that are arranged on this resin support 30, and this aluminium base 16 and glass plate 26 are positioned at same plane parallel arrangement at resin support 30.The upper surface of this aluminium base 16 is formed with insulating barrier 17, is formed with power circuit wiring layer 18 at this insulating barrier 17, is connected with power device 14 on this power circuit wiring layer 18, and this power device 14 can be active elements such as IGBT pipe or FRD pipe.
Be formed with control circuit wiring layer 28 on the surface of glass plate 26, be connected with control device 24 on this control circuit wiring layer 28, this control device 24 can be active elements such as HVIC or MCU, also adopts passive components such as electric capacity, resistance.If required circuit complexity can all form control circuit wiring layer 28 in glass plate 26 upper and lower surfaces, the middle control circuit wiring layer 28 that connects upper and lower surface by through hole.Present embodiment is that example describes with the technical scheme of glass plate 26 upper surfaces formation control circuit wiring layer 28 only.
Make 14 of each power devices, 24 of each control devices, power device 14 and power circuit wiring layer 18, control device 24 and control circuit wiring layer 28 by metal wire 15, and 18 formation points of control circuit wiring layer 28 and power circuit wiring layer are connected.This metal wire 15 is preferably aluminum steel, gold thread or copper cash.
All dispose pin 11 on this control circuit wiring layer 28 and the power circuit wiring layer 18, be used for carrying out input and/or the output of signal with the outside.
Also can be provided with pad 13 on control circuit wiring layer 28 and the power circuit wiring layer 18, this pad 13 is used for connecting pin 11 and control circuit wiring layer 28 and power circuit wiring layer 18, also can be used for connecting control circuit wiring layer 28 and power circuit wiring layer 18.Pin 11 be fixed on the pad 13 of being located at aluminium base 16 at least one edge and the pad 13 at glass plate 26 at least one edge on.Pin 11 welds by conductive adhesives such as scolding tin with pad 13.If the distance that pad is 13 is shorter, for example be not more than 1mm, and the difference in height of two pads 13 is less, for example be not more than 1mm, also can consider to use softer gold thread as metal wire 15.The pin 11 general metals that adopt aluminium or copper etc. to have certain degree of hardness are made.
By sealing resin 12 aluminium base 16, insulating barrier 17, power circuit wiring layer 18, power device 14, glass plate 26, control circuit wiring layer 28, control device 24, metal wire 15 and pin 11 are encapsulated, wherein, this pin 11 runs through sealing resin 12 and stretches out, make pin 11 expose in sealing resin 12 outsides with the other end that control circuit wiring layer 28 is connected with power circuit wiring layer 18 relatively, carry out input and/or the output of signal with the outside.
In the above-described embodiments, resin support 30 is pond shape setting, and its inside has two grooves, and two grooves are respectively applied to ccontaining aluminium base 16 and glass plate 26, and two grooves are adaptive with size and the shape of aluminium base 16 and glass plate 26 respectively.Arranging on the one hand of groove can be carried out effectively accurately fixing to aluminium base 16 and glass plate 26, is convenient to volume production; Made things convenient for filling sealing resin 12 to encapsulate on the other hand.Aluminium base is contained in this groove and is encapsulated in fully in the sealing resin 12, because sealing resin 12 is good electrical insulating materials, so the risk that aluminium base 16 is disturbed by external signal reduces greatly, strengthen the antijamming capability of Intelligent Power Module, promoted the stability of Intelligent Power Module work.
In the above-described embodiments, the bottom that is used for the groove of ccontaining aluminium base 16 is the hollow out setting.Make aluminium base 16 lower surfaces can not sealed fully by resin support 30, because the thermal conductivity far of resin support 30 is lower than aluminium, therefore improved aluminium base 16 radiating effects, further avoided the too high control signal disorder that causes of Yin Wendu.
Based on above-described embodiment, this Intelligent Power Module also comprises the radiator (not shown), and this radiator is arranged between power device 14 and the power circuit wiring layer 18, and this radiator preferably adopts copper material to make.The setting of this radiator can be dispelled the heat to power device 14, has further promoted the heat-sinking capability of Intelligent Power Module.
In the above-described embodiments, this insulating barrier 17 adopts at resin material middle and high concentrations such as epoxy resin and fills Al
2O
3And make, owing to filled Al
2O
3The thermal conductivity of insulating barrier 17 can be effectively improved, the heat-sinking capability of Intelligent Power Module can be improved.The thermal conductivity of insulating barrier 17 is preferably 2.0W/mk, is complementary with the coefficient of expansion and the sealing resin 12 that guarantees insulating barrier 17, has prevented that insulating barrier 17 from coming off because being heated.
In the above-described embodiments, these resin support 30 preferred employings are filled with SiO
2The thermohardening material and make.This aluminium base preferably adopts the aluminium of 1100 or 5052 types to make.Described control circuit wiring layer 28 and power circuit wiring layer 18 preferably are made of copper.
The present invention further also proposes a kind of manufacture method of Intelligent Power Module.
With reference to Fig. 6, Fig. 6 is the schematic flow sheet of the manufacture method of Intelligent Power Module of the present invention.
In embodiments of the present invention, the manufacture method of this Intelligent Power Module comprises:
Step S10, form insulating barrier and power circuit wiring layer successively on aluminium base one surface, at described power circuit wiring layer power device and pin are set, and by metal wire described power circuit wiring layer, power device and pin are electrically connected, form power cell;
Step S20 forms the control circuit wiring layer on glass plate surface, at described control circuit wiring layer control device and pin is set, and forms control unit;
Step S30 will be by the parallel resin support of packing into side by side with control unit of the interconnective described power cell of metal wire, and encapsulates by sealing resin.
At first, the resin support is placed on ad-hoc location, if the resin support is closed type, the heat sink material that silica gel etc. increases contact is evenly smeared in the whole bottom that is preferably in the resin support, if the resin support is the hollow out type, then also can consider to smear silica gel in the position of hollow out not, the aluminium base of guaranteed output unit can fully dispel the heat.The height that silica gel is smeared is 50 μ m.In addition, can accurately locate on the resin support for the aluminium base that makes power cell and the glass plate of control unit, can consider to form reference column at the resin support, form location hole at aluminium base and glass plate.In the resin support, place power cell and control unit respectively, and make power cell parallel with control unit side by side, be positioned at same plane.When picking and placeing power cell and control unit, note not touching the metal wire of power cell and control unit, after power cell and control unit are placed into the resin support, use pressuring flat device, do not have the place of power device, control device, metal wire and pin by being pressed in power cell and control unit, fully contact with the resin support with the bottom of guaranteeing power cell and control unit.After placement is stable, by nation's alignment, make to set up between pad to be electrically connected, the signal input/output line of metal wire after nation is fixed is communicated by letter the realization of power device and control device.
Then, the resin support to pack into power cell and control unit in oxygen-free environment toasts, and stoving time should be less than 2 hours, and baking temperature is preferably 125 ℃.The purpose of its baking is to remove the aqueous vapor of power cell and control unit surface attachment.Use oxygen-free environment to be because under heating condition, in order to prevent from making electric component surface oxidation such as power device.The resin support is put into assigned address, and the input rifle injects sealing resin to the resin support, and it is liquid epoxy resin that sealing resin can be selected under the normal temperature, also can select for use to review down to be the silica gel of fluidised form.Speed control during injection, guaranteeing under the prerequisite that resin evenly spreads in support, being not more than 1mm/s with the lifting height of sealing resin in the resin support is advisable, the final height that sealing resin injects is under the prerequisite on the surface of complete sealing metal line and all power devices and control device, the sealing resin of the general 1mm height that reinjects.At this, except pin exposes sealing resin, other elements all sealed resin seal.After injection is finished, the resin support is put into baking oven, be heated to 150 ℃, be not less than 30 minutes heating time.After the cooling, the sealing resin solid state.
The manufacture method of Intelligent Power Module of the present invention has reduced first with insulation colloid protection power device part; pass through the operation that contraposition up and down connects power cell and control unit again; only need a simple resinous framework to position; because power cell is that level is connected with control unit; therefore not high for the required precision of metal wire; also just significantly reduced the manufacture difficulty of Intelligent Power Module; need not buy expensive equipment can realize; location, the qualification rate that connects can reach 100%, are suitable for volume production.
With reference to Fig. 7, Fig. 7 is for making the schematic flow sheet of power cell in the manufacture method of Intelligent Power Module of the present invention.
In the above-described embodiments, the step S10 of making power model specifically comprises:
Step S11 forms described insulating barrier on described aluminium base one surface;
Circuit layout is as required prepared sizeable aluminium base, can choose the size of 104mm * 30mm for general Intelligent Power Module, the formation of sizeable aluminium base can form by directly the aluminium of 1m * 1m being carried out mode such as die-cut, also can form the V groove by the aluminium of first 1m * 1m, the mode of Jian Qieing forms then.Corrosion protection is carried out on the two sides of aluminium base to be handled.The surface of one side at least at aluminium base forms insulating barrier.
Step S12 forms Copper Foil on the surface of described insulating barrier;
The Copper Foil that is used for making the power circuit wiring layer is pasted on surface at insulating barrier.
Step S13, the described Copper Foil of etching forms described power circuit wiring layer;
Copper Foil is carried out etching, remove Copper Foil partly, form the power circuit wiring layer, this power circuit wiring layer refers to the Copper Foil of given shape.
Step S14 arranges described power device and pin at described power circuit wiring layer;
Ad-hoc location at the power circuit wiring layer is smeared tin cream, especially, need smear tin cream at pad, power device is directly installed on the assigned position of power circuit wiring layer, make carrier by aluminium or synthetic stone etc., pin is fixed on the pad correspondence position, by modes such as high temperature refluxes, tin cream is solidified.The backflow maximum temperature should be preferably 225 ℃ greater than 200 ℃.
Step S15 is electrically connected described power device and power circuit wiring layer by metal wire, forms power cell.
Utilize metal wire that power device and power circuit wiring layer are carried out nation's line and be connected, finally form power cell.
With reference to Fig. 8, Fig. 8 is for making the schematic flow sheet of control unit in the manufacture method of Intelligent Power Module of the present invention.
In the above-described embodiments, the step S20 of making control module specifically comprises:
Step S21 forms Copper Foil on described glass plate surface;
Circuit layout is as required prepared sizeable glass plate, can choose the size of 104mm * 90mm for general Intelligent Power Module.The formation of sizeable aluminium base can also can form the V groove by the aluminium of first 1m * 1m by directly modes such as the glass fiber plate of 1m * 1m fractures being formed, and the mode of Jian Qieing forms then.The Copper Foil that is used for making the control circuit wiring layer is pasted on surface at the glass plate.
Step S22, the described Copper Foil of etching forms described control circuit wiring layer;
Copper Foil is carried out etching, remove Copper Foil partly, form the control circuit wiring layer, this control circuit wiring layer refers to the Copper Foil of given shape.According to the needs of circuit function, also can all form the control circuit wiring layer on the two sides of glass plate, and by through hole the control circuit wiring layer of upper and lower surface be connected.
Step S23 arranges described control device and pin at the control circuit wiring layer, forms control unit.
Ad-hoc location at the control circuit wiring layer is smeared tin cream, especially, need smear tin cream at pad, control device is directly installed on the assigned position of control circuit wiring layer, make carrier by aluminium or synthetic stone etc., pin is fixed on the pad correspondence position, by modes such as high temperature refluxes, tin cream is solidified.The backflow maximum temperature should be preferably 225 ℃ greater than 200 ℃.If control device is wafer, need utilize metal wire that control device and control circuit wiring layer are carried out nation's line and be connected, finally form control unit.
The above only is the preferred embodiments of the present invention; be not so limit claim of the present invention; every equivalent structure transformation that utilizes specification of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (10)
1. an Intelligent Power Module is characterized in that, comprises a resin support and the aluminium base and the glass plate that are arranged on this resin rack surface, and described aluminium base and glass plate are positioned at same plane parallel arrangement;
Be formed with insulating barrier on the described aluminium base, be formed with the power circuit wiring layer on this insulating barrier, be connected with power device on this power circuit wiring layer;
Be formed with the control circuit wiring layer on the described glass plate, be connected with control device on this control circuit wiring layer;
Between the described power device, between power device and the power circuit wiring layer, and be electrically connected by metal wire between control circuit wiring layer and the power circuit wiring layer;
All dispose pin on described control circuit wiring layer and the power circuit wiring layer;
With described aluminium base, insulating barrier, power circuit wiring layer, power device, glass plate, control circuit wiring layer, control device, metal wire and pin package, wherein, described pin runs through described sealing resin and stretches out by sealing resin.
2. Intelligent Power Module as claimed in claim 1 is characterized in that, described resin support is pond shape setting, and has two grooves that are respectively applied to ccontaining described aluminium base and glass plate, and described groove is adaptive with described aluminium base and glass plate respectively.
3. Intelligent Power Module as claimed in claim 2 is characterized in that, the bottom that is used for the described groove of ccontaining described aluminium base is the hollow out setting.
4. Intelligent Power Module as claimed in claim 3 is characterized in that, also comprises the radiator that is arranged between described power device and the power circuit wiring layer.
5. as any described Intelligent Power Module in the claim 1 to 4, it is characterized in that, described insulating barrier adopt in be filled with Al
2O
3Epoxide resin material make, the thermal conductivity of described insulating barrier is 2.0W/mk.
6. as any described Intelligent Power Module in the claim 1 to 4, it is characterized in that described resin support adopts and is filled with SiO
2The thermohardening material and make.
7. as any described Intelligent Power Module in the claim 1 to 4, it is characterized in that described aluminium base adopts the aluminium of 1100 or 5052 types to make.
8. the manufacture method of an Intelligent Power Module is characterized in that, comprising:
Form insulating barrier and power circuit wiring layer successively on aluminium base one surface, at described power circuit wiring layer power device and pin are set, and make between described power circuit wiring layer, power device and the pin by metal wire and to be electrically connected, form power cell;
Form the control circuit wiring layer on glass plate surface, at described control circuit wiring layer control device and pin are set, form control unit;
Will be by the parallel resin support of packing into side by side with control unit of the interconnective described power cell of metal wire, and encapsulate by sealing resin.
9. the manufacture method of Intelligent Power Module as claimed in claim 8 is characterized in that, the step of described formation power cell specifically comprises:
Form described insulating barrier on described aluminium base one surface;
Surface at described insulating barrier forms Copper Foil;
The described Copper Foil of etching forms described power circuit wiring layer;
At described power circuit wiring layer described power device and pin are set;
Make between described power circuit wiring layer, power device and the pin by metal wire to be electrically connected, form power cell.
10. the manufacture method of Intelligent Power Module as claimed in claim 8 is characterized in that, the step of described formation control unit specifically comprises:
Form Copper Foil on described glass plate surface;
The described Copper Foil of etching forms described control circuit wiring layer;
At the control circuit wiring layer described control device and pin are set, form control unit.
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| CN104882426A (en) * | 2014-02-27 | 2015-09-02 | 西安永电电气有限责任公司 | Plastic packaging type IPM module stacking structure |
| CN107045991A (en) * | 2017-03-13 | 2017-08-15 | 广东美的制冷设备有限公司 | Circuit module and its manufacture method |
| CN107393886A (en) * | 2017-08-24 | 2017-11-24 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN107481978A (en) * | 2017-08-24 | 2017-12-15 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN108735707A (en) * | 2018-04-18 | 2018-11-02 | 华为技术有限公司 | The preparation method and power module of a kind of ceramic substrate, ceramic substrate |
| CN109994463A (en) * | 2019-04-29 | 2019-07-09 | 广东美的制冷设备有限公司 | Intelligent power module and preparation method thereof, air conditioner |
| CN110601552A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | High-integration intelligent power module and electrical equipment |
| CN110594989A (en) * | 2018-06-13 | 2019-12-20 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
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| CN103236422B (en) | 2015-12-23 |
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