CN103187366A - Thin film transistor (TFT) array substrate formation method - Google Patents
Thin film transistor (TFT) array substrate formation method Download PDFInfo
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- CN103187366A CN103187366A CN2011104535810A CN201110453581A CN103187366A CN 103187366 A CN103187366 A CN 103187366A CN 2011104535810 A CN2011104535810 A CN 2011104535810A CN 201110453581 A CN201110453581 A CN 201110453581A CN 103187366 A CN103187366 A CN 103187366A
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Abstract
A thin film transistor (TFT) array substrate formation method comprises the steps of providing a substrate; forming a TFT switch, a data line, a scanning line, a public electrode and a passivation layer on the substrate; forming an organic film layer on the passivation layer; using a mask version with a through hole location hole pattern and groove patterns to expose and develop the organic film layer to form a through hole location hole and a plurality of grooves; etching organic film layer and the passivation layer at the bottom of the through hole location hole; enabling the through hole to be exposed out of a leakage electrode of the TFT switch, sequentially forming pixel electrode and a reflection electrode; covering the patterned organic film layer, the lateral walls and the bottoms of the grooves and the lateral wall and the bottom of the through hole. The TFT array substrate formation method can improves yield and save cost.
Description
Technical field
The present invention relates to the demonstration field, relate in particular to the method for the tft array substrate that is formed for reflective or half-reflection and half-transmission formula LCD.
Background technology
At present, therefore reflective liquid-crystal display, half-reflection and half-transmission LCD more and more receive an acclaim owing to have good outdoor display effect and low-power consumption.
Fig. 1 is the floor map of dot structure of the reflective liquid-crystal display of prior art, with reference to figure 1, the dot structure of reflective liquid-crystal display of the prior art comprises: grid 11, source electrode 12, drain electrode 13, the scan line 14 that is electrically connected with grid 11, the data wire 15 that is electrically connected with source electrode 12 is positioned at public electrode 21, pixel electrode 22 and the reflecting electrode 23 of pixel region, wherein, reflecting electrode 23 has a plurality of protruding 24, and pixel electrode 22 13 is electrically connected with draining by through hole 25.
Fig. 2～Fig. 5 forms technology along the generalized section of A-A direction shown in Figure 1 for tft array substrate, and Fig. 2～Fig. 5 only shows a pixel.The formation technology that is used for the tft array substrate of reflected displaying device comprises:
In conjunction with reference to figure 1 and Fig. 2, substrate 10 is provided, form metal level at substrate 10, this metal level is carried out graphically, form grid 11, scan line 14 and public electrode 21, cuing open in Fig. 2 shows that the position only demonstrates public electrode 21, and the shape of public electrode 21 only plays the signal effect among Fig. 2.Form dielectric layer 31, cover gate 11, scan line 14, public electrode 21 and substrate 10; Form amorphous silicon layer at dielectric layer 31 afterwards, amorphous silicon layer graphically is formed with the source region (not shown); Then form metal level, be coated with source region and dielectric layer 31; Then, metal level is graphically formed source electrode 12, drain electrode 13 and data wire 15, cuing open in Fig. 2 shows that the position only demonstrates drain electrode 13, and the shape of drain electrode 13 among Fig. 2 only is the signal effect; Form passivation layer 32 afterwards, cover source electrode 12, drain electrode 13, data wire 15, dielectric layer 31, active area, and passivation layer 32 is graphically formed opening 27, expose drain electrode 13.Wherein, forming grid 11, scan line 14 and public electrode 21 is the first road masking process, and being formed with the source region is the second road masking process, and formation source electrode 12, drain electrode 13, data wire 15 are the 3rd road masking process, and forming opening 27 is the 4th road masking process.
With reference to figure 3, form organic film 33, cover passivation layer 32 and filling opening 27 covering drain electrodes 13.
With reference to figure 4, utilize the mask version that organic film 33 is carried out first exposure, this first exposure is to be to form in organic film 33 projection 24, wherein the sweep speed of light is 85mm/sec (millimeter/minute) during first exposure; Another road mask version of recycling is carried out second exposure to organic film 33, and this second exposure is that the sweep speed of light is 20mm/sec when forming through hole 25, the second exposures in organic film 33; Afterwards, the organic film 33 that has carried out first exposure and second exposure is developed, form groove 26 and through hole 25 at organic film 33, the organic film between the adjacent notches 26 is projection 24.Carry out first exposure and use the 5th road masking process, carry out second exposure and used the 6th road masking process.
With reference to figure 5, then form pixel electrode layer, and pixel electrode layer is graphically formed pixel electrode 22; Then, form the reflector, and the reflector is graphically formed reflecting electrode 23.Form pixel electrode 22 and reflecting electrode 23 and be respectively the 7th road and the 8th road masking process.
The production technology of the reflected displaying device of prior art need double expose to organic film 33, once develop in order to form projection 24 and through hole 25, compares with the display of other patterns, and double exposure expends the long production time; And the sweep speed that forms second light that exposes of through hole is 20mm/sec, and the exposure sweep speed of 20mm/sec is too slow, has had a strong impact on production efficiency, and productive rate only is 1/6 of other mode display.
In order to improve productive rate, some factories attempt using half tone mask version (halftone mask), form projection and through hole with a mask version, can only utilize single exposure and a developing process.Compare with above-described eight road masking process, utilize half tone mask version not only to save the mask version one, and only use the single exposure process.Yet in order to form via hole image, the exposure sweep speed still must remain on 20mm/sec, and the exposure sweep speed of 20mm/sec is too slow.Simultaneously, half tone technology instability, and make the cost height of half tone mask version.Therefore utilize half tone mask version can not save cost, improve productive rate.
And there is above problem too in the production technology in the half-reflection and half-transmission formula display reflects district of prior art.
Summary of the invention
The problem that the present invention solves is the formation method that prior art is used for the tft array substrate of reflective or half-reflection and half-transmission formula display, and productive rate is low, cost is high.
For addressing the above problem, the invention provides a kind of method that forms tft array substrate, comprising:
Step 1: substrate is provided, forms TFT switch, data wire, scan line, public electrode and passivation layer at described substrate;
Step 2: form organic film at described passivation layer;
Step 3: utilize the mask version with through hole location hole figure and groove pattern that described organic film is exposed and develops formation through hole location hole and a plurality of groove;
Step 4: organic film and the passivation layer of the described through hole location hole of etching bottom form through hole, and described through hole exposes the drain electrode of TFT switch;
Step 5: form pixel electrode and reflecting electrode successively, cover sidewall and the bottom of the sidewall of described organic film, groove after graphical and bottom, through hole.
Optionally, the described tft array substrate array base palte that is reflection LCD.
Optionally, in step 4, the organic film of described etching through hole location hole portion and passivation layer form through hole and comprise:
Form patterned photoresist layer, cover the upper surface of described organic film after graphical, sidewall and the bottom of groove, expose sidewall and the bottom of through hole location hole;
Be that organic film and the passivation layer of mask etching after graphical forms through hole with described patterned photoresist layer;
Remove patterned photoresist layer.
Optionally, in step 4, the organic film of described etching through hole location hole portion and passivation layer form through hole and comprise:
Direct described organic film and the passivation layer after graphical of etching, the drain electrode that goes out in the TFT switch until the bottom-exposed of described through hole location hole forms through hole.
Optionally, in step 3, the height of described through hole location hole is greater than the height of groove.
The formation method of the tft array substrate for reflected displaying device of the present invention, form passivation layer after, passivation layer is not carried out patterned technology, save mask one.After passivation layer forms organic film, utilize the mask version shade with through hole location hole figure and groove pattern on organic film, described organic film is exposed; Organic film after the exposure is developed in formation through hole location hole and a plurality of groove in the organic film; The organic film of etching through hole location hole bottom and passivation layer form the through hole that exposes drain electrode then.Afterwards, form reflecting electrode and pixel electrode again.Has the mask version of via hole image and protruding figure simultaneously owing to utilize, and utilize single exposure in organic film, to form groove, through hole location hole, therefore can save one masking process, and, owing to need when developing, not form through hole, but formed through hole by etching, so the speed of exposure scanning does not need to reduce yet, can remain on 85mm/sec, can improve productive rate accordingly, reduce cost.In addition, have the mask version of via hole image and protruding figure simultaneously owing to utilize, can save a mask version like this, also just can reduce cost accordingly.
In one embodiment, the method for formation through hole and groove is: form patterned photoresist layer, cover sidewall and the bottom of described organic film, groove, expose the bottom of through hole location hole; Be the described organic film of mask etching, passivation layer with described patterned photoresist layer, form through hole; Remove patterned photoresist layer.This embodiment has saved masking process one with respect to prior art.
In another embodiment, behind formation groove and the through hole location hole, directly dry etching organic film and passivation layer form through hole, owing to do not need to use masking process, have saved the twice masking process with respect to prior art, and cost further reduces.
The present invention also provides the another kind of method that forms tft array substrate, comprising:
Step 1: substrate is provided, forms TFT switch, data wire, scan line, public electrode and passivation layer at described substrate;
Step 2: form organic film at described passivation layer;
Step 3: utilize the mask version with groove pattern, through hole location hole figure and regional transmission opening location hole figure described organic film is exposed and to develop, form a plurality of grooves, through hole location hole and regional transmission opening location hole;
Step 4: organic film and the passivation layer of the described through hole location hole of etching and described regional transmission opening location hole bottom, form through hole and regional transmission opening respectively, described through hole exposes the drain electrode of TFT switch;
Step 5: form pixel electrode and cover described organic film, groove, through hole and regional transmission opening after graphical; Pixel electrode at reflector space forms reflecting electrode.
Optionally, the described tft array substrate array base palte that is the half-reflection and half-transmission type LCD.
Optionally, in step 4, organic film and the passivation layer of the described through hole location hole of described etching and described regional transmission opening location hole bottom comprise:
Directly described organic film and the passivation layer after graphical of etching forms through hole and regional transmission opening.
Optionally, in step 3, the height of described through hole location hole is greater than the height of described groove.Optionally, in step 4, organic film and the passivation layer of described etching through hole location hole and regional transmission opening location hole bottom form through hole respectively and the regional transmission opening comprises:
Form patterned photoresist layer, cover the upper surface of described organic film after graphical, sidewall and the bottom of groove, expose sidewall and bottom, regional transmission opening location hole bottom and the sidewall of through hole location hole;
Be that organic film and the passivation layer of mask etching after graphical forms through hole and regional transmission opening with described patterned photoresist layer;
Remove patterned photoresist layer.
Compared with prior art, the present invention has the following advantages:
The formation method of the tft array substrate for half-reflection and half-transmission formula display of the present invention, form passivation layer after, passivation layer is not carried out patterned technology, save mask one.After passivation layer forms organic film, utilize the mask version shade with through hole location hole figure, regional transmission opening location hole figure and groove pattern on organic film, described organic film is exposed; Organic film after the exposure is developed in formation through hole location hole, regional transmission opening location hole and a plurality of groove in the organic film; Organic film and the passivation layer of etching through hole location hole bottom and regional transmission opening location hole bottom form through hole and the regional transmission opening that exposes drain electrode then.Afterwards, form reflecting electrode and pixel electrode again.Has the mask version of through hole location hole figure, groove pattern and regional transmission opening location hole figure simultaneously owing to utilize, and utilize single exposure in organic film, to form through hole location hole, groove, regional transmission opening location hole, therefore can save one masking process, and, owing to need when developing, not form through hole, regional transmission opening, but through hole, regional transmission opening have been formed by etching, so the speed of exposure scanning does not need to reduce yet, can remain on 85mm/sec, can improve productive rate accordingly, reduce cost.In addition, have the mask version of through hole location hole figure, regional transmission opening location hole figure and groove pattern simultaneously owing to utilize, can save the mask version like this, also just can reduce cost accordingly.
In one embodiment, the method for formation through hole, regional transmission opening and groove is: form patterned photoresist layer, cover sidewall and the bottom of described organic film, groove, expose the bottom of through hole location hole, the bottom of regional transmission opening location hole; Be the described organic film of mask etching, passivation layer with described patterned photoresist layer, form through hole, regional transmission opening; Remove patterned photoresist layer.This embodiment has saved masking process with respect to prior art.
In another embodiment, after forming groove, regional transmission opening location hole and through hole location hole, directly dry etching organic film and passivation layer form through hole and regional transmission opening, do not need to use masking process during owing to etching, further saved masking process, cost further reduces.
Description of drawings
Fig. 1 is the floor map of dot structure of the reflective liquid-crystal display of prior art;
Fig. 2～Fig. 5 is that the formation technology of the tft array substrate that is used for reflected displaying device of prior art is along the generalized section of A-A direction shown in Figure 1;
Fig. 6 is the floor map of dot structure of tft array substrate of the reflection LCD of the specific embodiment of the invention;
Fig. 7 is the schematic flow sheet of the formation tft array substrate method of the specific embodiment of the invention;
Fig. 8～Figure 14 is that the formation tft array substrate method of the present invention's first specific embodiment is along the cross-sectional view of A-A direction shown in Figure 6;
Figure 15～Figure 19 is that the formation tft array substrate method of the present invention's second specific embodiment is along the cross-sectional view of A-A direction shown in Figure 6;
Figure 20 is the floor map of dot structure of tft array substrate of the half-reflection and half-transmission type LCD of the specific embodiment of the invention;
Figure 21 and Figure 22 are the cross-sectional view along B-B direction shown in Figure 20.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public embodiment.
Fig. 6 is the floor map of dot structure of tft array substrate of the reflective liquid-crystal display of the specific embodiment of the invention, with reference to figure 6, the dot structure of the specific embodiment of the invention comprises: grid 41, source electrode 42, drain electrode 43, the scan line 44 that is electrically connected with grid 41, the data wire 45 that is electrically connected with source electrode 42, be positioned at public electrode 51, pixel electrode 52 and the reflecting electrode 53 of pixel region, wherein, reflecting electrode 53 has a plurality of protruding 54, and in projection 54 diffuse reflections that can realize light, pixel electrode 52 43 is electrically connected with draining by through hole 55.This dot structure is same as the prior art, in order to clearly demonstrate the present invention, this dot structure is described again.
Fig. 7 is the schematic flow sheet of tft array substrate method of the formation reflective liquid-crystal display of the specific embodiment of the invention, and with reference to figure 7, the formation tft array substrate method of the specific embodiment of the invention comprises:
Step S1 provides substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer at described substrate;
Step S2 forms organic film at described passivation layer;
Step S3 utilizes the mask version with through hole location hole figure and groove pattern that described organic film is exposed and develops formation through hole location hole and a plurality of groove;
Step S4, organic film and the passivation layer of the described through hole location hole of etching bottom form through hole, and described through hole exposes the drain electrode of TFT switch;
Step S5 forms pixel electrode and reflecting electrode successively, covers sidewall and the bottom of the sidewall of described organic film, groove after graphical and bottom, through hole.
First embodiment
Fig. 8～Figure 14 is the cross-sectional view along A-A direction shown in Figure 6 of the formation tft array substrate method of the present invention's first specific embodiment, below in conjunction with the formation tft array substrate method that describes the present invention's first specific embodiment with reference to figure 6, Fig. 7 and Fig. 8～Figure 14 figure in detail.
Execution in step S1 in conjunction with reference to figure 6, Fig. 7 and Fig. 8, provides substrate 40, is formed with TFT switch, data wire 45, scan line 44, public electrode 51 and passivation layer 62 at described substrate.
In the present invention, described substrate 40 glass substrates, but be not limited to glass substrate, can be for well known to a person skilled in the art other substrates.
Concrete, forming TFT switch, data wire 45, scan line 44, public electrode 51 and passivation layer 62 at described substrate 40 comprises: form first conductive layer at described substrate 40, wherein, the material of first conductive layer is selected from the combination in any of gold, silver, copper, aluminium, titanium, chromium, molybdenum, cadmium, nickel, cobalt one of them or they; Utilize photoetching, graphical described first conductive layer of etching technics, form grid 41, the scan line 44 that is electrically connected with grid 41, the public electrode 51 of TFT switch, at the profile position of Fig. 7, only illustrate public electrode 51, and the shape of public electrode 51 only is the signal effect.
Form active layer at gate medium 61 then, and it is etched the active area that island is the TFT switch, the material of described active layer can be polysilicon or amorphous silicon.
Form second conductive layer, cover described active area, gate dielectric layer 61, the data wire 45 that utilizes graphical described second conductive layer of photoetching, etching technics to form source electrode 42, drain electrode 43, be electrically connected with described source electrode 42, wherein, the material of second conductive layer is selected from the combination in any of gold, silver, copper, aluminium, titanium, chromium, molybdenum, cadmium, nickel, cobalt one of them or they.
Afterwards, form passivation layer 62, the source electrode 42 of covering gate dielectric layer 61, TFT switch, drain electrode 43, active area, data wire 45, the material of passivation layer 62 is silicon nitride, silica or their combination, but be not limited to these materials, can be for well known to a person skilled in the art other materials.
Execution in step S2 in conjunction with reference to figure 6, Fig. 7 and Fig. 9, forms organic film 63 at described passivation layer 62, that is to say that organic film 63 is paved with whole tft array substrate.The material of organic film 63 is for well known to a person skilled in the art material, and the formation method can spin coating, spraying etc.The effect of described organic film 63 mainly is to form projection 54 and enhance product performance, and can prevent up and down that such as organic film two conductive layers is crosstalked; The thickness of organic film 63 determines that according to actual needs among this first embodiment, the thickness of organic film 63 can be chosen between 0.5 μ m to the 3 μ m, and the thickness of this organic film 63 is not limited to 0.5 μ m to 3 μ m certainly, can determine according to actual needs.
Execution in step S3 in conjunction with reference to figure 6, Fig. 7 and Figure 10, utilizes the mask version with through hole location hole figure and groove pattern that described organic film 63 is exposed and develops formation through hole location hole 65 and a plurality of groove 66.
Organic film between described a plurality of groove 66 is projection 54, and namely described a plurality of groove 66 is the projectioies 54 that form organic film; Described through hole location hole 65 is oriented the position of the through hole in organic film and the passivation layer, in step S3, does not need to form through hole, and has only formed the through hole location hole 65 of definition lead to the hole site.
Among the present invention, the size of a plurality of grooves that form in the organic film can be different, the size of through hole location hole 65 can than the size of groove 66 greatly, also can be than the size of groove 66 little or equate with it.Among first embodiment, can select the size d1 of groove 66 between 1 μ m～3.5 μ m; The size d2 of through hole location hole is between 7 μ m～15 μ m.Concrete, can be by the groove pattern on the mask version and through hole location hole figure be limited, with reach the groove that in organic film, forms, size and the degree of depth of through hole location hole all arrives demand of practical production.
Among first embodiment, to the sweep speed of organic film exposure between 70～100mm/sec, the concrete sweep speed that can utilize 85mm/sec of the prior art is in the present embodiment exposed to organic film 63, form through hole location hole 65 and a plurality of groove 66 simultaneously, shortened the time of technology like this than prior art, accordingly, improved productive rate.Among the present invention, the sweep speed that organic film is exposed is not limited to 70～100mm/sec, can adjust the sweep speed of organic film exposure according to the difference of the exposure light source that adopts and the demand of actual process.Execution in step S4, in conjunction with reference to figure 6, Fig. 7 and Figure 11, Figure 12, Figure 13, organic film 63 and the passivation layer 62 of the described through hole location hole of etching bottom form through holes 55, and described through hole 55 exposes the drain electrode 43 of TFT switch.
Concrete, in this first embodiment, the organic film 63 of the described through hole location hole of etching 65 bottoms and passivation layer 62 form through hole 55 and comprise:
With reference to Figure 11, form photoresist layer 67, the organic film 63 after the cover graphicsization, i.e. sidewall and the bottom of the sidewall of the upper surface of the organic film after the cover graphicsization 63, a plurality of groove 66 and bottom, through hole location hole 65;
Then, with reference to Figure 12, utilize the mask version with via hole image that photoresist layer 67 is carried out exposure imaging, form patterned photoresist layer 67, cover the upper surface of described organic film 63 after graphical, sidewall and the bottom of a plurality of groove 66, expose sidewall and the bottom of through hole location hole 65.
With reference to Figure 13, be organic film 63, the passivation layer 62 of mask etching after graphical with described patterned photoresist layer 67, form through hole 55, described through hole 55 exposes the drain electrode 43 of TFT switch.Wherein, lithographic method is dry etching, and the gas that uses in the dry etching need be determined according to material and the thickness of organic film 63 and passivation layer 62; After forming through hole 55, utilize cineration technics to remove patterned photoresist layer 67.
Among first embodiment, because after in organic film, forming groove 66, through hole location hole 65, utilize patterned photoresist layer 67 as mask organic film to be carried out etching and form through hole 55, therefore form in the process of through hole 55 at etching organic film 63, can etched recesses.In addition, the pixel electrode that will form in the subsequent technique and the effect that drains and be electrically connected are only played in the effect of through hole 55, so the aperture of through hole 55 can be greatly, can be little, thus among this embodiment through hole location hole 65 size can than the size of groove 66 greatly, also can be than the size of groove 66 little or equate with it.
Execution in step S5 in conjunction with reference to figure 6, Fig. 7 and Figure 14, forms pixel electrode 52 and reflecting electrode 53 successively, covers sidewall and the bottom of the sidewall of described organic film 63, a plurality of groove 66 after graphical and bottom, through hole 55.
Concrete formation method is: form pixel electrode layer, cover sidewall and the bottom of the sidewall of described organic film 63, a plurality of groove 66 after graphical and bottom, through hole 55, then, utilize the graphical described pixel electrode layer of chemical wet etching technology to form pixel electrode 52; Then, form the reflector, utilize the graphical described reflector of chemical wet etching technology to form reflecting electrode 53.
First embodiment of the invention is formed for the method for the tft array substrate of reflected displaying device, behind the formation passivation layer, passivation layer is not carried out patterned technology, saves the mask version one.After passivation layer forms organic film, utilize the mask version with through hole location hole figure and a plurality of groove patterns that described organic film is carried out the exposure first time; Organic film after the exposure is developed in a plurality of grooves of formation and through hole location hole in the organic film, and the height height of a plurality of grooves of aspect ratio of described through hole location hole; Re-use organic film and the passivation layer of the mask carving erosion through hole location hole below with via hole image afterwards, make through hole expose the drain electrode of TFT switch.Therefore can save one masking process, and, owing to need when developing, not form through hole, but only formed the through hole location hole, form through hole by etching through hole location hole bottom, so the speed of exposure scanning does not need to reduce, can remain on 85mm/sec yet, also just can improve productive rate accordingly, reduce cost.In addition, save one mask version and corresponding masking process than prior art, reduced cost.
Second embodiment
Figure 15～Figure 19 is the cross-sectional view along A-A direction shown in Figure 6 of the formation tft array substrate method of the present invention's second specific embodiment, below in conjunction with the formation tft array substrate method that describes the present invention's second specific embodiment with reference to figure 6, Fig. 7, Figure 15～Figure 19 in detail.
Execution in step S1 in conjunction with reference to figure 6, Fig. 7 and Figure 15, provides substrate 40, forms TFT switch, data wire 45, scan line 44 and public electrode 51 at described substrate 40.
This step S1 is identical with the step S1 of first embodiment, does not do at this and gives unnecessary details.
Execution in step S2 in conjunction with reference to figure 6, Fig. 7 and Figure 16, forms organic film 632 at described passivation layer 62.The method of the step S2 of this step S2 and first embodiment is basic identical.Wherein, the thickness of organic film need be determined according to the actual requirements.
Execution in step S3, in conjunction with reference to figure 6, Fig. 7 and Figure 17, the mask version that utilization has through hole location hole figure and a groove pattern is exposed to described organic film 632 and is developed, and forms a plurality of grooves 66 and through hole location hole 65, and the height of the aspect ratio groove 66 of described through hole location hole 65 is big.Organic film between described a plurality of groove 66 is projection 54, and namely described a plurality of groove 66 is used for forming organic film projection 54; The position of the through hole in described through hole location hole 65 definition organic films and the passivation layer.
In conjunction with reference to Figure 18 and since after step S4 in, directly organic film 632 is carried out etching and forms through hole 55, therefore the also organic film bottom the etched recesses when organic film of etching through hole location hole bottom.When preventing that the etching organic film from forming through hole 55, the bottom of the groove 66 of TFT switch top is also worn quarter exposes source electrode, drain electrode, in this second embodiment, preferably, the height of through hole location hole 65 is greater than the height of groove 66, can select the size d1 of groove 66 between 1 μ m～3.5 μ m, the size d2 of through hole location hole is between 7 μ m～15 μ m.
In this embodiment, be not limited to the height of hole location hole 65 greater than the height of groove 66, can avoid the bottom of groove 66 to be worn quarter by other means and expose source electrode, drain electrode, for example, can above the TFT switch region, not form groove 66.
Execution in step S4, in conjunction with reference to figure 6, Fig. 7 and Figure 18, the organic film 632 of the described through hole location hole of etching 65 bottoms and passivation layer 62 form through holes 55, and described through hole 55 exposes the drain electrode 43 of TFT switch.
Concrete, in a second embodiment, the organic film 632 of etching through hole location hole 65 bottoms and passivation layer 62 forms through holes 55 and comprise: direct described organic film 632 and the passivation layer 62 after graphical of etching, the drain electrode 43 that goes out in the TFT switch until the bottom-exposed of described through hole location hole 65 forms through holes 55.That is to say, in this second embodiment, do not need to utilize the position of patterned photoresist layer definition through hole 55, but the organic film 632 after graphical is carried out whole etching, etching is dry etching, like this, all extend downwards the bottom of the bottom of groove, through hole location hole, bottom-exposed at the through hole location hole goes out drain electrode 43 o'clock, when namely through hole 55 forms, stops etching.
Because the material of organic film 632 is organic material, photoresist layer 67 in first embodiment also is organic material, so as mask it is carried out etching with organic film 632, perhaps as mask organic film 632 is carried out etching with graphical back photoresist layer 67, finally can reach identical effect; Again since the thickness of organic film 632 in this etch step, integral thinned, when therefore forming organic film 632 among the step S2 in the present embodiment, need to consider the thickness of organic film, according to actual conditions such as etching speed, the material of etching gas or organic film etc., determine the thickness of organic film, generally speaking, organic film thickness in first embodiment, the thickness range that organic film in a second embodiment increases is generally between 5%～30%, but the thickness range that the invention is not restricted to organic film increases is 5%～30%, and the thickness of organic film 632 need be determined according to actual conditions.
Execution in step S5 with reference to figure 6, Fig. 7 and Figure 19, forms pixel electrode 52 and reflecting electrode 53 successively, covers sidewall and the bottom of the sidewall of described organic film 632, a plurality of groove 66 after graphical and bottom, through hole 55.
This step S5 also step S5 with first embodiment is identical, does not do at this and gives unnecessary details.
In a second embodiment, after forming a plurality of grooves and through hole location hole, direct dry etching organic film and passivation layer, the drain electrode that goes out in the TFT switch until the bottom-exposed of described through hole location hole forms through hole, owing to during the etching through hole location hole, do not need to use masking process, one masking process and corresponding technology thereof have been saved with respect to first embodiment, saved the twice masking process with respect to prior art, cost further reduces.
Figure 20 is the floor map of dot structure of tft array substrate of the half-reflection and half-transmission type LCD of the specific embodiment of the invention, the dot structure of the tft array substrate of half-reflection and half-transmission type LCD of the present invention comprises: grid 110, source electrode 120, drain electrode 130, the scan line 140 that is electrically connected with grid 110, the data wire 150 that is electrically connected with source electrode 120, be positioned at the public electrode 510 of pixel region, be positioned at the pixel electrode 520 of regional transmission opening 100 and echo area, be positioned at the reflecting electrode 102 of reflector space, and described reflecting electrode 102 is positioned on the described pixel electrode 520 of echo area, and described reflector space is around regional transmission opening 100.Wherein, reflecting electrode 102 has a plurality of protruding 54, and in projection 54 diffuse reflections that can realize light, pixel electrode 520 130 is electrically connected with draining by through hole 55.The dot structure of the half-reflection and half-transmission type LCD of this dot structure and prior art is basic identical.
The tft array substrate method of formation half-reflection and half-transmission type LCD provided by the invention comprises:
Step S1 provides substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer at described substrate;
Step S2 forms organic film at described passivation layer;
Step S3 utilizes the mask version with groove pattern, through hole location hole figure and regional transmission opening location hole figure described organic film is exposed and to develop, and forms a plurality of grooves, through hole location hole and regional transmission opening location hole;
Step S4, organic film and the passivation layer of the described through hole location hole of etching and described regional transmission opening location hole bottom form through hole and regional transmission opening respectively, and described through hole exposes the drain electrode of TFT switch;
Step S5 forms pixel electrode and covers described organic film, groove, through hole and regional transmission opening after graphical; Pixel electrode at reflector space forms reflecting electrode.Wherein, reflector space is around the regional transmission opening.
The 3rd embodiment
Figure 20 is the floor map of dot structure of tft array substrate of the half-reflection and half-transmission type LCD of the specific embodiment of the invention, Figure 21 and Figure 22 are the cross-sectional view along B-B direction shown in Figure 20, the tft array substrate that this 3rd specific embodiment provides is the array base palte of half-reflection and half-transmission type LCD, specifies the formation step of array base palte of the half-reflection and half-transmission type LCD of the 3rd embodiment below in conjunction with accompanying drawing.
Execution in step S1 provides substrate 40, forms TFT switch, data wire 150, scan line 140, public electrode 510 and passivation layer 62 at described substrate 40.The step S1 of this step S1 and first embodiment is basic identical, does not do at this and gives unnecessary details.
Execution in step S2 forms organic film 633 at described passivation layer.
This step S2 is identical with the method for the step S2 of first embodiment.Optionally, the thickness of organic film 633 is different with organic film 63 thickness among first embodiment.Organic film 63 thickness in first embodiment need only to satisfy and can form projection 54 and prevent that two conductive layers is crosstalked up and down, and thickness range is bigger, between 0.5 μ m to 3 μ m; But in this 3rd embodiment, organic film 633 forms the effect of dual-box thick structure in addition, namely can form reflector space above organic film 633 in follow-up structure, and the thickness of described reflector space is about half of thickness of liquid crystal box.In the prior art, the thickness of liquid crystal box of half-reflection and half-transmission type LCD has 3.5 μ m～4.5 μ m not wait, and the thickness that described organic film 633 can be set as required is that 1.75 μ m～2.25 μ m do not wait.Certainly, the data of herein enumerating only are example, and in actual process, the thickness of organic film 633 is not limited to these data, can adjust according to the demand of actual process.
Execution in step S3 utilizes the mask version with groove pattern, through hole location hole figure and regional transmission opening location hole figure described organic film 633 is exposed and to develop, and forms a plurality of grooves, through hole location hole and regional transmission opening location hole.
This step S3 compares with the step S3 of first embodiment, in order to form the regional transmission opening, has increased the formation of regional transmission opening location hole.
Among the present invention, the size of a plurality of grooves that form in the organic film can be different, and groove, through hole location hole and regional transmission opening location hole three's size relationship is concrete the restriction not, all can determine according to the actual requirements.In this embodiment, can select the size of groove between 1 μ m～3.5 μ m, the size of through hole location hole is between 7 μ m～15 μ m, regional transmission opening location hole figure is of a size of 5%～75% of whole Pixel Dimensions, can determine the size of regional transmission opening location hole according to the different pixels size.Concrete, can be by the groove pattern on the mask version, through hole location hole figure, regional transmission opening location hole figure be limited, so that size and the degree of depth of the groove that forms in organic film, through hole location hole, regional transmission opening location hole all arrive demand of practical production.
In this step S3, utilize same sweep speed that organic film 633 is exposed, the sweep speed of exposure is between 70～100mm/sec, the concrete sweep speed that can utilize 85mm/sec of the prior art is in the present embodiment exposed to organic film 633, shortened the time of technology like this than prior art, accordingly, improved productive rate.Among the present invention, the sweep speed that organic film 633 is exposed is not limited to 70～100mm/sec, can adjust the sweep speed of organic film exposure according to the difference of the exposure light source that adopts and the demand of actual process.
Execution in step S4, organic film 633 and the passivation layer 62 of the described through hole location hole of etching and described regional transmission opening location hole bottom form through hole 55 and regional transmission opening 100 respectively, and described through hole 55 exposes the drain electrode 130 of TFT switch.
Particularly, the technology of this step S4 is as follows:
Form photoresist layer, the organic film 633 after the cover graphicsization, i.e. sidewall and the bottom of the sidewall of the sidewall of the upper surface of the organic film after the cover graphicsization 633, a plurality of groove 66 and bottom, through hole location hole and bottom and regional transmission opening location hole;
Then, utilization has the mask version of via hole image and regional transmission opening figure photoresist layer is carried out exposure imaging, form patterned photoresist layer, cover the upper surface of described organic film 633 after graphical, sidewall and the bottom of a plurality of groove 66, expose sidewall and the bottom of through hole location hole and regional transmission opening location hole;
Then, be organic film 633, the passivation layer 62 of mask etching after graphical with described patterned photoresist layer, form through hole 55 and regional transmission opening 100, wherein said through hole 55 exposes the drain electrode 43 of TFT switch.Wherein, lithographic method is dry etching, and the gas that uses in the dry etching need be determined according to material and the thickness of organic film 633 and passivation layer 62; After forming through hole 55 and regional transmission opening 100, utilize cineration technics to remove patterned photoresist layer.
Execution in step S5: form pixel electrode 510 and cover described organic film 633, groove 66, through hole 55 and regional transmission opening 100 after graphical, form reflecting electrodes 102 at the pixel electrode 510 of reflector space.Wherein, reflector space is around regional transmission opening 100.The material of described pixel electrode 510 is the electrically conducting transparent material, as tin indium oxide.
Among the 3rd embodiment, because after in organic film, forming groove, through hole location hole, regional transmission opening location hole, utilize patterned photoresist layer as mask organic film to be carried out etching and form through hole and regional transmission opening, therefore form in the process of through hole, regional transmission opening at the etching organic film, can etched recesses.In addition, the effect that the pixel electrode that will form in the subsequent technique and drain electrode are electrically connected is only played in the effect of through hole, thus the aperture of through hole can be greatly, can be little; And, because organic film is that transparent material and its lower floor do not have conductive layer, therefore the etching depth of regional transmission opening can not impact the TFT substrate, thus the aperture of regional transmission opening can be greatly, can be little, the degree of depth of regional transmission opening location hole and size need according to actual process definite.The array base palte of half-reflection and half-transmission type LCD provided by the invention and formation method are compared with prior art, have saved mask version and corresponding technology thereof, and processing procedure is simplified, and provide cost savings; And the speed of exposure scanning does not need to reduce yet, and can remain on 85mm/sec, just can improve productive rate accordingly yet.
The 4th embodiment
The formation tft array substrate of the present invention's the 4th specific embodiment is the array base palte of half-reflection and half-transmission type LCD.In this 4th specific embodiment, the method that forms the array base palte of described half-reflection and half-transmission type LCD is:
Execution in step S1 provides substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer at described substrate.The step S1 of described this step S1 and the 3rd embodiment is basic identical, introduces no longer in detail herein.
Execution in step S2 forms organic film at described passivation layer.The step S1 of described this step S1 and the 3rd embodiment is basic identical.Wherein, the thickness of organic film need be determined according to the actual requirements.Generally, organic film is compared with the organic film among the 3rd embodiment, and it is big by 5%～30%, concrete that thickness is wanted, and between 1.84 μ m～3 μ m, the reason following steps can be explained in detail.
Execution in step S3 utilizes the mask version with groove pattern, through hole location hole figure and regional transmission opening location hole figure described organic film is exposed and to develop, and forms a plurality of grooves, through hole location hole and regional transmission opening location hole.In this embodiment, preferred, the height of described regional transmission opening location hole is greater than the height of described through hole location hole.
Since after step S4 in, directly organic film is carried out etching and forms through hole, regional transmission opening, therefore the also organic film bottom the etched recesses when organic film of etching through hole location hole bottom, regional transmission opening location hole bottom.When preventing that the etching organic film from forming through hole, regional transmission opening, the bottom of the groove of TFT switch top is also worn quarter exposes source electrode, drain electrode, and in the 4th embodiment, preferred, the height of described through hole location hole is greater than the height of described groove.
Because organic film is that transparent material and its lower floor do not have conductive layer, therefore the etching depth of regional transmission opening can not impact the TFT substrate, the regional transmission opening can be carved and wear until the passivation layer that etches into lower floor, also can also have residual organic film for the regional transmission open bottom, therefore the height of regional transmission opening location hole does not have concrete restriction, determines to get final product according to actual process.
In this embodiment, be not limited to the height of through hole location hole greater than the height of groove, can avoid the bottom of groove to be worn quarter by other means and expose source electrode, drain electrode, for example, can above the TFT switch region, not form groove.Execution in step S4, organic film and the passivation layer of the described through hole location hole of etching and described regional transmission opening location hole bottom form through hole and regional transmission opening respectively, and described through hole exposes the drain electrode of TFT switch.
Concrete, in the 4th embodiment, the organic film of the described through hole location hole of etching and described regional transmission opening location hole bottom and passivation layer form through hole and the regional transmission opening comprises among the step S4: direct described organic film and the passivation layer after graphical of etching, the drain electrode that goes out in the TFT switch until the bottom-exposed of described through hole location hole forms through hole and forms the regional transmission opening.That is to say, in the 4th embodiment, do not need to utilize the photoresist layer definition through hole of mask plate patternsization and the position of regional transmission opening, but the organic film after graphical is carried out whole etching, etching is dry etching, like this, and than the 3rd embodiment, this the 4th embodiment can save the mask version one, reduces cost.
In the step S4 of present embodiment, the thickness of organic film is in this etch step, integral thinned, when therefore forming organic film among the step S2 in the present embodiment, need to consider the thickness of organic film, such as material of etching speed, etching gas or organic film etc., determine the thickness of organic film according to actual conditions.Generally, the organic film thickness in the 3rd embodiment, the thickness range that the organic film in the 4th embodiment increases is generally between 5%～30%.But the thickness range that the invention is not restricted to organic film increases is 5%～30%, and the thickness of organic film need be determined according to actual conditions.
Step S5 forms pixel electrode and covers described organic film, groove, through hole and regional transmission opening after graphical; Pixel electrode at reflector space forms reflecting electrode, and described reflector space arranges around the regional transmission opening.
Among the 4th embodiment, after forming groove, regional transmission opening location hole and through hole location hole, directly dry etching organic film and passivation layer form through hole and regional transmission opening, owing to do not need to use masking process during etching, further saved masking process with respect to the 3rd embodiment, cost further reduces.
Need to prove that be discontinuously arranged in the diagram protrusions of the specific embodiment of the invention, but the projection in this present invention specific embodiment can continuous distribution, also can be discontinuously arranged, can design according to the needs of reflection.
Though the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (10)
1. a method that forms tft array substrate is characterized in that, comprising:
Step 1: substrate is provided, forms TFT switch, data wire, scan line, public electrode and passivation layer at described substrate;
Step 2: form organic film at described passivation layer;
Step 3: utilize the mask version with through hole location hole figure and groove pattern that described organic film is exposed and develops formation through hole location hole and a plurality of groove;
Step 4: organic film and the passivation layer of the described through hole location hole of etching bottom form through hole, and described through hole exposes the drain electrode of TFT switch;
Step 5: form pixel electrode and reflecting electrode successively, cover sidewall and the bottom of the sidewall of described organic film, groove after graphical and bottom, through hole.
2. the method for formation tft array substrate as claimed in claim 1 is characterized in that, described tft array substrate is the array base palte of reflection LCD.
3. the method for formation tft array substrate as claimed in claim 2 is characterized in that, in step 4, the organic film of described etching through hole location hole bottom and passivation layer form through hole and comprise:
Form patterned photoresist layer, cover the upper surface of described organic film after graphical, sidewall and the bottom of groove, expose sidewall and the bottom of through hole location hole;
Be that organic film and the passivation layer of mask etching after graphical forms through hole with described patterned photoresist layer;
Remove patterned photoresist layer.
4. the method for formation tft array substrate as claimed in claim 2 is characterized in that, in step 4, the organic film of described etching through hole location hole bottom and passivation layer form through hole and comprise:
Direct described organic film and the passivation layer after graphical of etching, the drain electrode that goes out in the TFT switch until the bottom-exposed of described through hole location hole forms through hole.
5. the method for formation tft array substrate as claimed in claim 4 is characterized in that, in step 3, the height of described through hole location hole is greater than the height of groove.
6. a method that forms tft array substrate is characterized in that, comprising:
Step 1: substrate is provided, forms TFT switch, data wire, scan line, public electrode and passivation layer at described substrate;
Step 2: form organic film at described passivation layer;
Step 3: utilize the mask version with groove pattern, through hole location hole figure and regional transmission opening location hole figure described organic film is exposed and to develop, form a plurality of grooves, through hole location hole and regional transmission opening location hole;
Step 4: organic film and the passivation layer of the described through hole location hole of etching and described regional transmission opening location hole bottom, form through hole and regional transmission opening respectively, described through hole exposes the drain electrode of TFT switch;
Step 5: form pixel electrode and cover described organic film, groove, through hole and regional transmission opening after graphical; Pixel electrode at reflector space forms reflecting electrode.
7. the method for formation tft array substrate as claimed in claim 6 is characterized in that, described tft array substrate is the array base palte of half-reflection and half-transmission type LCD.
8. the method for formation tft array substrate as claimed in claim 7 is characterized in that, in step 4, organic film and the passivation layer of the described through hole location hole of described etching and described regional transmission opening location hole bottom comprise:
Directly described organic film and the passivation layer after graphical of etching forms through hole and regional transmission opening.
9. the method for formation tft array substrate as claimed in claim 8 is characterized in that, in step 3, the height of described through hole location hole is greater than the height of described groove.
10. the method for formation tft array substrate as claimed in claim 7 is characterized in that, in step 4, organic film and the passivation layer of described etching through hole location hole and regional transmission opening location hole bottom form through hole respectively and the regional transmission opening comprises:
Form patterned photoresist layer, cover described graphical;
The upper surface, sidewall and the bottom of groove of organic film, expose sidewall and bottom, regional transmission opening location hole bottom and the sidewall of through hole location hole;
Be that organic film and the passivation layer of mask etching after graphical forms through hole and regional transmission opening with described patterned photoresist layer;
Remove patterned photoresist layer.
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| CN106058079A (en) * | 2016-08-18 | 2016-10-26 | Tcl集团股份有限公司 | Pixel bank, manufacturing method thereof and light emitting diode |
| CN114879394A (en) * | 2022-04-29 | 2022-08-09 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
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| CN106058079A (en) * | 2016-08-18 | 2016-10-26 | Tcl集团股份有限公司 | Pixel bank, manufacturing method thereof and light emitting diode |
| CN114879394A (en) * | 2022-04-29 | 2022-08-09 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
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| CN103187366B (en) | 2016-03-16 |
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