CN103177918A - Magnetron and plasma processing equipment - Google Patents
Magnetron and plasma processing equipment Download PDFInfo
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- CN103177918A CN103177918A CN2011104486123A CN201110448612A CN103177918A CN 103177918 A CN103177918 A CN 103177918A CN 2011104486123 A CN2011104486123 A CN 2011104486123A CN 201110448612 A CN201110448612 A CN 201110448612A CN 103177918 A CN103177918 A CN 103177918A
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- magnetic pole
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- outer magnetic
- internal magnetic
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Abstract
The invention provides a magnetron and plasma processing equipment. The magnetron comprises an inner pole and an outer pole which are opposite and nested to each other without contact, and radial section of each of the inner pole and the outer pole is helix. By the aid of the magnetron, utilization rate of target materials can be increased, and production cost of the plasma processing equipment can be reduced while production efficiency thereof can be improved.
Description
Technical field
The invention belongs to the plasma processing device field, relate to a kind of magnetron and use the plasma processing device of this magnetron.
Background technology
The magnetically controlled DC sputtering technology is the common technology of preparation semiconductor integrated circuit, it is to make gas ionization form plasma under low pressure, then the magnetic field by target material surface makes the charged particle in plasma clash into target material surface, so that target generation sputter, in sputtering particle, neutral target atom is deposited on the workpiece to be machined surface such as wafer and forms film.
Fig. 1 is the structure diagram of typical magnetron sputtering apparatus.As shown in Figure 1, magnetron sputtering apparatus comprises reaction chamber 1, vacuum pump 2 and gas source 4.Wherein, vacuum pump 2 is communicated with the bottom of reaction chamber 1, in order to the gas pressure of conditioned reaction chamber 1 inside.Gas source 4 is connected with reaction chamber 1 by pipeline, is provided with between gas source 4 and reaction chamber 1 for the gas flowmeter 3 of controlling reaction gas flow.Be provided with the electrostatic chuck 5 in order to bearing wafer in the bottom of reaction chamber 1, the position relative with electrostatic chuck 5 at the top of reaction chamber 1 is provided with target 6.Also be provided with above target 6 for the magnetron 9 that improves sputter rate, magnetron 9 scans the surface of target 6 under the driving of motor 12.
Fig. 2 is the plan view of typical magnetron.See also Fig. 2, magnetron 9 comprises internal magnetic pole 91 and the outer magnetic pole 92 of kidney shape, and internal magnetic pole 91 is nested in outer magnetic pole 92, and the polarity of internal magnetic pole 91 and outer magnetic pole 92 is opposite.Utilize typical magnetron scanning target, the corrosion of target is very inhomogeneous.Fig. 3 is the corrosion curve of target when utilizing typical magnetron scanning target.In figure, abscissa represents that target center arrives the distance at target edge, i.e. the radius of target; Ordinate represents the corrosion depth of target.From the corrosion curve of Fig. 3 as can be known, the corrosion of 132,134,136,138 position targets is darker, and the corrosion of 136 position targets is especially serious, and therefore, typical magnetron causes the corrosion of target inhomogeneous, and the utilance of target is lower.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of magnetron and use the plasma processing device of this magnetron, it can make the target homogeneous corrosion, thereby improves the utilance of target.
The technical scheme that adopts that solves the problems of the technologies described above is to provide a kind of magnetron, comprise opposite polarity internal magnetic pole and outer magnetic pole, described internal magnetic pole and described outer magnetic pole nest together mutually non-contiguously, and described internal magnetic pole and the outer magnetic pole shape on its radial section is helix.
Preferably, described internal magnetic pole and the outer magnetic pole shape on its radial section all satisfies formula (1),
θ＝r-arctan(r) (1)
In formula, θ represents the radian apart from the helix starting point;
R represents the distance apart from the helix central point.
Preferably, described internal magnetic pole comprises internal magnetic pole body and a plurality of magnet that are arranged on described internal magnetic pole body, and described magnet is along the camber line spread configuration of described internal magnetic pole body; Described outer magnetic pole comprises outer magnetic pole body and a plurality of magnet that are arranged on described outer magnetic pole body, and described magnet is along the camber line spread configuration of described outer magnetic pole body.
Preferably, the described magnet that is arranged on described internal magnetic pole body evenly distributes along the camber line of described internal magnetic pole body; The described magnet that is arranged on described outer magnetic pole body evenly distributes along the camber line of described outer magnetic pole body.
Preferably, described magnet is the magnet of column, and described magnet is embedded in described internal magnetic pole body and described outer magnetic pole body.
Preferably, at described outer magnetic pole in the radial direction, the width of the inner end of described outer magnetic pole body is greater than the width of the outer end of described outer magnetic pole body; Perhaps at described internal magnetic pole in the radial direction, the width of the inner end of described internal magnetic pole body is greater than the width of the outer end of described internal magnetic pole body.
Preferably, on described outer magnetic pole cross section radially, the outer end of described outer magnetic pole is closed, so that described internal magnetic pole is nested in described outer magnetic pole.
Preferably, the rotating shaft of magnetron is the straight line at the inner end place of the symmetry axis of described outer magnetic pole or described outer magnetic pole.
Preferably, the spacing of described outer magnetic pole and described internal magnetic pole is 0.5～1.5 inch.
Preferably, the spacing of described outer magnetic pole and described internal magnetic pole is adjusted according to actual target erosion result.
The present invention also provides a kind of plasma processing device, comprise reaction chamber, target, magnetron and drive the driver part that described magnetron rotates, described target is arranged on the top of described reaction chamber, described magnetron is arranged on the top of described target, described magnetron is at the surperficial rotation sweep of described target under the driving of described driver part, and described magnetron adopts described magnetron provided by the invention.
The present invention has following beneficial effect:
Magnetron provided by the invention adopts the spiral line type structure, namely, described internal magnetic pole and outer magnetic pole are shaped as helix on its radial section, it can make the corrosion of target more even, thereby the utilance that makes target is brought up to 58% left and right, can reduce simultaneously and change the required time of target, and then reduce production costs.
Plasma processing device provided by the invention, magnetron due to the spiral line type structure, make the corrosion of target more even, thereby the utilance that makes target is brought up to 58% left and right, this has not only reduced the plasma processing device production cost, and reduced the replacing required time of target, thereby can improve the production efficiency of plasma processing device.
Description of drawings
Fig. 1 is the structure diagram of typical magnetron sputtering apparatus;
Fig. 2 is the plan view of typical magnetron;
Fig. 3 is the corrosion curve of target when utilizing typical magnetron scanning target;
Fig. 4 is the plan view of embodiment of the present invention magnetron;
Fig. 5 is the schematic diagram of helix of the present invention
Fig. 6 be the embodiment of the present invention with magnet inhomogeneous be arranged on plan view on internal magnetic pole body and outer magnetic pole body;
Fig. 7 is the corrosion simulation curve of the target when utilizing embodiment of the present invention magnetron scanning target material surface; And
Fig. 8 is the plan view of magnetron in variant embodiment of the present invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing, magnetron provided by the invention and plasma processing device are described in detail.
Fig. 4 is the plan view of embodiment of the present invention magnetron.See also Fig. 4, magnetron comprises opposite polarity internal magnetic pole 91 and outer magnetic pole 92, and internal magnetic pole 91 and outer magnetic pole 92 nest together mutually non-contiguously.Internal magnetic pole 91 and outer magnetic pole 92 shape on magnetron radially cross section the cross section of magnetron axis (namely perpendicular to) is helix, and namely the present embodiment magnetron is the helical magnetic control pipe.With respect to existing magnetron, as kidney type magnetron or class helical magnetic control pipe, the present embodiment helical magnetic control pipe can make target obtain uniform magnetic field in the process of scanning target, thereby can improve the uniformity of target erosion due to smoother.
Preferably, internal magnetic pole 91 and the shape of outer magnetic pole 92 on the magnetron radial section all satisfy formula (1), and in other words, helix satisfies formula (1),
θ＝r-arctan(r) (1)
In formula, θ represents and radian from the helix starting point;
R represents the distance apart from the helix central point.
Fig. 5 is the schematic diagram of helix of the present invention.Wherein, the coordinate central point is the central point of helix, and the helix starting point is the position of curvature maximum on helix.Internal magnetic pole 91 and the shape of outer magnetic pole 92 on its radial section are as shown in Figure 5.
In the present embodiment, internal magnetic pole 91 is with the difference of outer magnetic pole 92: internal magnetic pole 91 is different with the radian that outer magnetic pole 92 turns over, and internal magnetic pole 91 is different with the position of the inner end of outer magnetic pole 92.As shown in Figure 4, the outer end of outer magnetic pole 92 is closed, and internal magnetic pole 91 is nested in outer magnetic pole 92 fully, make internal magnetic pole 91 and outer magnetic pole 92 form enclosed region, namely formed closed electronics constraint zone, thereby improved the ability of magnetic field bound electron, and then starter is more prone to.
See also Fig. 4, internal magnetic pole 91 comprises internal magnetic pole body 91a and a plurality of magnet 40a, and magnet 40a evenly distributes along the camber line of internal magnetic pole body 91a, namely by inner end evenly distributed setting to the outer end of internal magnetic pole body 91a.Similarly, outer magnetic pole 92 comprises outer magnetic pole body 92a and a plurality of magnet 40b, and magnet 40b distributes along the camber line of outer magnetic pole body 92a, namely by inner end evenly distributed setting to the outer end of outer magnetic pole body 92a.
The present embodiment, internal magnetic pole body 91a and outer magnetic pole body 92a adopt permeability magnetic material to make, and the magnet 40a that is arranged on internal magnetic pole body 91a is opposite with the polarity of magnet 40b on being arranged on outer magnetic pole body 92a, as the S utmost point that is arranged on the magnet 40 on internal magnetic pole body 91a is towards the reader, be arranged on the N utmost point of the magnet 40 on outer magnetic pole body 92a towards the reader, thereby make internal magnetic pole 91 and outer magnetic pole 92 obtain opposite polarity magnetic field, can retrain the plasma of target material surface by opposite polarity internal magnetic pole 91 and outer magnetic pole 92.
Need to prove, although the internal magnetic pole 91 of the present embodiment magnetron is comprised of internal magnetic pole body 91a and magnet 40a, the present invention is not limited thereto.The internal magnetic pole 91 of magnetron also can directly adopt magnet to be made, and namely adopts a magnet identical with internal magnetic pole body 91a shape as internal magnetic pole 91.Similarly, the outer magnetic pole 92 of the present embodiment magnetron is comprised of outer magnetic pole body 92a and magnet 40b, but the present invention is not limited thereto.The outer magnetic pole 92 of magnetron also can directly adopt magnet to be made, and namely adopts a magnet identical with outer magnetic pole body 92a shape as outer magnetic pole 92.
In the present embodiment, magnet 40a evenly distributes along the camber line of internal magnetic pole body 91a, and magnet 40b evenly distributes along the camber line of outer magnetic pole body 92a, to improve the density of plasma, increases magnetic field intensity, thereby can improve the stability of sputter.
Be appreciated that in actual use, also can the different magnet 40a of density be set on internal magnetic pole body 91a according to technological requirement, that is, magnet 40a also can be at the inner end of internal magnetic pole body 91a to inhomogeneous setting between the outer end.In like manner, magnet 40b also can be at the inner end of outer magnetic pole body 92a to inhomogeneous setting between the outer end.As shown in Figure 6, Fig. 6 be the embodiment of the present invention with magnet inhomogeneous be arranged on plan view on internal magnetic pole body and outer magnetic pole body.
In the present embodiment, magnet 40a is embedded in internal magnetic pole body 91a, and magnet 40b is embedded in outer magnetic pole body 92a.Certainly, the surface that magnet 40a also can be close to internal magnetic pole body 91a arranges, and in like manner, the surface that magnet 40b also can be close to outer magnetic pole body 92a arranges.The quantity of magnet 40a, 40b and distribution density can the magnetic field intensity required according to magnetron be regulated.
In addition, internal magnetic pole body 91a can be 1～2 times of magnet 40a diameter at the width of its radial direction, and outer magnetic pole body 92a can be 1～2 times of magnet 40b diameter at the width of its radial direction.Can reach the purpose of the magnetic field intensity of regulating magnetron by regulating internal magnetic pole body 91a and outer magnetic pole body 92a at the width of its radial direction.
Fig. 7 is the corrosion simulation curve of the target when utilizing embodiment of the present invention magnetron scanning target material surface.In figure, abscissa represents that target center arrives the distance at target edge, i.e. the radius of target, unit: centimetre (cm); Ordinate represents the relative corrosion depth of target.As shown in Figure 7, can find out from corrosion curve, the corrosion of overall target is very even, and this makes novel magnetron design design more in the past have the target utilization of more uniform target erosion and Geng Gao.Although target erosion profile central area extent of corrosion is higher, can reduce the magnetic field intensity of central area by the magnet density that reduces the central area or the modes such as inside and outside distance between two poles that reduce the central area, thereby reduce its extent of corrosion.
Preferably, the present embodiment has increased the inner end of outer magnetic pole body 92a at its width in the radial direction, namely, make the width of inner end of outer magnetic pole body 92a greater than the width of the outer end of outer magnetic pole body 92a, to reduce the magnetic field intensity of magnetron central area, thereby can reduce the corrosion of target center position, and then improve the uniformity of target erosion, improve the utilance of target.Be understood that, the present embodiment increases the inner end of internal magnetic pole body 91a at its width in the radial direction, that is, make the width of inner end of internal magnetic pole body 91a greater than the width of the outer end of internal magnetic pole body 91a, can reach equally the purpose of the magnetic field intensity that reduces the magnetron central area.
In the present embodiment, the spacing in magnetic pole 91 and outer magnetic pole 92 is adjusted according to actual target erosion result, as, the spacing of internal magnetic pole 91 and outer magnetic pole 92 is 0.5～1.5 inch, preferred 1 inch, this can make starter and keep plasma and be more prone to.In actual use, can be with the symmetry axis of outer magnetic pole 92 rotating shaft as magnetron, certainly, also can with the straight line at the inner end place of the outer magnetic pole rotating shaft as magnetron, can adjust according to the corrosion condition of target the position of the rotating shaft of magnetron.
Magnetron that the present embodiment provides adopts the spiral line type structure, that is, described internal magnetic pole and outer magnetic pole are shaped as helix on its radial section, and it can make the corrosion of target more even, and measuring as can be known, the utilance of target is 58% left and right.This not only can improve the utilance of target, and can reduce and change the required time of target, and then reduces production costs, and enhances productivity.
As the modification of above-described embodiment, Fig. 8 shows the plan view of magnetron in variant embodiment.As shown in Figure 8, in the present embodiment, the outer end of outer magnetic pole 92 is Open architecture, and namely outer magnetic pole 92 does not fully surround internal magnetic pole 91.In addition, the inner end of outer magnetic pole body 92a is identical with the width of the outer end of outer magnetic pole body 92a at the width in the radial direction of outer magnetic pole 92.In addition, variant embodiment is identical with the further feature of above-described embodiment, repeats no more here.Through analog computation, when utilizing the magnetron scanning target material surface of variant embodiment, the corrosion curve of target is similar to Fig. 7.Magnetron in this variant embodiment can reach the utilance that improves target equally.
The present embodiment also provides a kind of plasma processing device, it comprises reaction chamber, target, magnetron and drives the driver part that described magnetron rotates, target is arranged on the top of reaction chamber, magnetron is arranged on the top of target, under the driving of driver part, magnetron is at the surface scan of target, and wherein magnetron adopts the described magnetron of above-described embodiment.
The present embodiment plasma processing device is owing to adopting the described magnetron of above-described embodiment, make the corrosion of target more even, thereby improved the utilance of target, this has not only reduced the plasma processing device production cost, and reduced the replacing required time of target, thereby can improve the production efficiency of plasma processing device.
Be understandable that, above execution mode is only the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (11)
1. a magnetron, comprise opposite polarity internal magnetic pole and outer magnetic pole, and described internal magnetic pole and described outer magnetic pole nest together mutually non-contiguously, it is characterized in that, described internal magnetic pole and the outer magnetic pole shape on its radial section is helix.
2. magnetron according to claim 1, is characterized in that, described internal magnetic pole and the outer magnetic pole shape on its radial section all satisfies formula (1),
θ＝r-arctan(r) (1)
In formula, θ represents the radian apart from the helix starting point;
R represents the distance apart from the helix central point.
3. magnetron according to claim 2, is characterized in that, described internal magnetic pole comprises internal magnetic pole body and a plurality of magnet that are arranged on described internal magnetic pole body, and described magnet is along the camber line spread configuration of described internal magnetic pole body; Described outer magnetic pole comprises outer magnetic pole body and a plurality of magnet that are arranged on described outer magnetic pole body, and described magnet is along the camber line spread configuration of described outer magnetic pole body.
4. magnetron according to claim 3, is characterized in that, the described magnet that is arranged on described internal magnetic pole body evenly distributes along the camber line of described internal magnetic pole body; The described magnet that is arranged on described outer magnetic pole body evenly distributes along the camber line of described outer magnetic pole body.
5. according to claim 3 or 4 described magnetrons, is characterized in that, described magnet is the magnet of column, and described magnet is embedded in described internal magnetic pole body and described outer magnetic pole body.
6. according to claim 3 or 4 described magnetrons, is characterized in that, at described outer magnetic pole in the radial direction, the width of the inner end of described outer magnetic pole body is greater than the width of the outer end of described outer magnetic pole body; Perhaps at described internal magnetic pole in the radial direction, the width of the inner end of described internal magnetic pole body is greater than the width of the outer end of described internal magnetic pole body.
7. magnetron according to claim 2, is characterized in that, on described outer magnetic pole cross section radially, the outer end of described outer magnetic pole is closed, so that described internal magnetic pole is nested in described outer magnetic pole.
8. magnetron according to claim 2, is characterized in that, the rotating shaft of magnetron is the straight line at the inner end place of the symmetry axis of described outer magnetic pole or described outer magnetic pole.
9. magnetron according to claim 2, is characterized in that, the spacing of described outer magnetic pole and described internal magnetic pole is 0.5～1.5 inch.
10. magnetron according to claim 2, is characterized in that, the spacing of described outer magnetic pole and described internal magnetic pole is adjusted according to actual target erosion result.
11. plasma processing device, comprise reaction chamber, target, magnetron and drive the driver part that described magnetron rotates, described target is arranged on the top of described reaction chamber, described magnetron is arranged on the top of described target, described magnetron is at the surperficial rotation sweep of described target under the driving of described driver part, it is characterized in that, described magnetron adopts the described magnetron of claim 1-10 any one.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102654736B1 (en) | 2020-04-24 | 2024-04-05 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Semiconductor processing device and magnetron mechanism thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111304620A (en) * | 2020-04-24 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and magnetron mechanism thereof |
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| US4995958A (en) * | 1989-05-22 | 1991-02-26 | Varian Associates, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| US6045672A (en) * | 1996-05-21 | 2000-04-04 | Anelva Corporation | Sputtering apparatus |
| US6183614B1 (en) * | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
| CN1676662A (en) * | 2004-01-07 | 2005-10-05 | 应用材料股份有限公司 | Two dimensional magnetron scanning for planar sputtering |
| US20060144703A1 (en) * | 2005-01-05 | 2006-07-06 | Yang Hong S | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry |
| CN101553595A (en) * | 2005-07-25 | 2009-10-07 | 应用材料股份有限公司 | Method and apparatus for sputtering onto large flat panels |
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2011
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4995958A (en) * | 1989-05-22 | 1991-02-26 | Varian Associates, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| US6045672A (en) * | 1996-05-21 | 2000-04-04 | Anelva Corporation | Sputtering apparatus |
| US6183614B1 (en) * | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
| CN1676662A (en) * | 2004-01-07 | 2005-10-05 | 应用材料股份有限公司 | Two dimensional magnetron scanning for planar sputtering |
| US20060144703A1 (en) * | 2005-01-05 | 2006-07-06 | Yang Hong S | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry |
| CN1997768A (en) * | 2005-01-05 | 2007-07-11 | 应用材料股份有限公司 | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry |
| CN101553595A (en) * | 2005-07-25 | 2009-10-07 | 应用材料股份有限公司 | Method and apparatus for sputtering onto large flat panels |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102654736B1 (en) | 2020-04-24 | 2024-04-05 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Semiconductor processing device and magnetron mechanism thereof |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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