CN103168360B - 垂直定向的半导体纳米线的光吸收和过滤特性 - Google Patents

垂直定向的半导体纳米线的光吸收和过滤特性 Download PDF

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CN103168360B
CN103168360B CN201180051048.XA CN201180051048A CN103168360B CN 103168360 B CN103168360 B CN 103168360B CN 201180051048 A CN201180051048 A CN 201180051048A CN 103168360 B CN103168360 B CN 103168360B
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徐官用
穆尼布·沃贝尔
保罗·斯坦武泽尔
伊森·舍恩布伦
亚平·丹
肯尼斯·B·克洛泽
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Harvard College
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Abstract

本文描述一种纳米线阵列。所述纳米线阵列包括衬底和从所述衬底基本上垂直延伸的多条纳米线；其中：所述纳米线的每一者沿着其整个长度具有均一化学性质；所述纳米线的折射率至少为所述纳米线的覆层的折射率的两倍。此纳米线阵列可用作光电检测器、亚微米彩色滤光片、静态彩色显示器或动态彩色显示器。

Description

垂直定向的半导体纳米线的光吸收和过滤特性
相关申请案的交叉参考
本申请案与第12/204,686号(授予第7,646,943号美国专利)、第12/648,942号、第12/270,233号、第12/472,264号、第12/472,271号、第12/478,598号、第12/573,582号、第12/575,221号、第12/633,323号、第12/633,318号、第12/633,313号、第12/633,305号、第12/621,497号、第12/633,297号、第61/266,064号、第61/357,429号、第61/306,421号以及第61/306,421号美国专利申请案相关，所述专利申请案的揭示内容全文以引用的方式并入本文中。
技术领域
背景技术
纳米结构通常展现其大体积对等物中不存在的吸引人的物理特性。纳米结构的光学特性一直是当前研究关注点之一。转换纳米结构的光学特性将促进其在半导体、光学元件和消费者电子工业中的应用。在一个实例中，纳米结构的光学特性可由其化学组成控制。化学掺杂可改变组成半导体纳米结构的材料的电子结构，这又会改变其与光的交互。在另一实例中，将纳米结构布置成规则栅格可产生个别纳米结构所缺乏的光学特性。然而，这些常规方法通常需要复杂的化学合成或合成后操纵，且因此对于条件的微小变化不太稳健，且无法轻易且准确地将纳米结构定位在功能装置中。对比之下，本文描述的方法通过利用纳米结构的小物理大小和自上而下式制造工艺(即，移除一块大体积材料的一部分直到实现所要纳米结构为止)来克服常规方法的这些问题。
发明内容
本文描述一种纳米线阵列，其包括衬底和从所述衬底基本上垂直延伸的多条纳米线；其中：所述纳米线的折射率至少为所述纳米线的覆层的折射率的两倍。优选地，所述纳米线的数量密度至多约为1.8/μm2。
所述纳米线阵列可使用包括以下各项的方法来制造：(a)用抗蚀剂层涂覆所述衬底；(b)使用光刻技术在抗蚀剂层中产生点图案；(c)在抗蚀剂层中使图像显影；(d)沉积掩模层；(e)起离抗蚀剂层；(f)通过对衬底进行干式蚀刻形成纳米线；(g)任选地移除掩模层；其中点的形状和大小决定纳米线的横截面形状和大小。
所述纳米线阵列可用作光电检测器、亚微米彩色滤光片、静态彩色显示器或动态彩色显示器。
附图说明
图1A展示纳米线阵列的透视示意图。
图1B展示图1A的纳米线阵列的横截面示意图。
图2A-2D是示范性纳米线阵列的SEM图像。
图3A展示具有拥有一系列不同半径的纳米线的纳米线阵列的测得的反射光谱。
图3B展示图3A的纳米线阵列的模拟的反射光谱。
图3C展示作为其上的纳米线的半径的函数的纳米线阵列的测得和模拟的反射光谱中的下沉(dip)位置。
图4A-4C展示在纳米线阵列中的纳米线附近处于不同波长的H1,1模式的主要横向分量。
图4D展示垂直入射在纳米线阵列上的白光的可能路径的示意说明。
图5A展示具有不同纳米线半径的三个纳米线阵列的H1,1模式的模拟有效折射率(neff)(作为波长的函数)。
图5B展示图5A的纳米线阵列的模拟吸收光谱。
图5C比较纳米线阵列中的衬底的模拟吸收光谱、纳米线阵列中的纳米线(45nm半径)的模拟吸收光谱以及整个纳米线阵列的模拟反射光谱。
图6展示根据一实施例包括纳米线阵列的动态彩色显示器的四个像素的示意俯视图。
图7A和7B展示用于测量纳米线阵列的反射光谱的两个示范性设备的示意图。
具体实施方式
根据一实施例，本文描述一种纳米线阵列，其包括衬底和从所述衬底基本上垂直延伸的多条纳米线；其中所述纳米线的折射率至少为所述纳米线的覆层的折射率的两倍。所述纳米线的数量密度优选至多约为1.8/μm2。
根据一实施例，一种纳米线阵列包括衬底和从所述衬底基本上垂直延伸的多条纳米线；其中所述纳米线阵列可作为亚微米彩色滤光片操作。如本文使用的“亚微米彩色滤光片”意味着允许某些波长的光通过滤光片中的光学元件的滤光片至少在一个维度中小于1微米。
根据一实施例，一种纳米线阵列包括衬底和从所述衬底基本上垂直延伸的多条纳米线；其中所述纳米线不实质上耦合。如本文使用的术语“实质上耦合”意味着纳米线总体与入射光交互使得纳米线阵列的光谱特性(例如，反射光谱)不同于纳米线阵列中的个别纳米线的光谱特性。如本文使用的术语“纳米线不实质上耦合”意味着一条纳米线不影响相邻纳米线的特性。举例来说，当纳米线的间距改变且纳米线吸收或反射的光不发生颜色改变时，那么所述纳米线不实质上耦合。
根据一实施例，一种纳米线阵列包括衬底和从所述衬底基本上垂直延伸的多条纳米线；所述纳米线阵列对于肉眼不呈现为黑色。如本文使用的术语“肉眼”意味着无增强设备支援的人类视觉感知。如本文使用的术语“纳米线阵列对于肉眼不呈现为黑色”意味着来自纳米线的经反射可见光大体为零，这可能会基于纳米线长度、半径和间距以及衬底的光学特性在某些条件下发生。
根据一实施例，如本文使用的纳米线意味着具有大小在两个维度中限于至多1000nm且在其它维度中不受限制的结构。如本文使用的阵列意味着例如网格等对象的系统性布置。如本文使用的术语“从衬底基本上垂直延伸的纳米线”意味着纳米线与衬底之间的角度为从85°到90°。如本文使用的覆层意味着围绕纳米线的物质，其可为真空、空气、水等。如本文使用的纳米线的折射率意味着真空中的光速相对于纳米线中的光速的比率。如本文使用的纳米线的数量密度意味着衬底每单位面积的纳米线平均数目。
根据一实施例，纳米线阵列中的纳米线的每一者在纳米线的纵向方向上从纳米线的一端到纳米线的相对端具有基本上均一的化学组成。
根据一实施例，如本文使用的纳米线的化学组成意味着纳米线中存在的每一元素的原子的最简单整数比。如本文使用的术语“基本上均一的化学组成”意味着原子的比率变化至多3%，优选至多1%。如本文使用的纳米线的纵向方向意味着从纳米线距衬底最远的一端指向纳米线距衬底最近的一端的方向。
根据一实施例，纳米线阵列中的纳米线的每一者为单晶体、多晶体或非晶体。如本文使用的纳米线为单晶体意味着整个纳米线的晶格在整个纳米线上是连续且不中断的，其中无晶界。如本文使用的纳米线为多晶体意味着纳米线包括被晶界分离的晶体的晶粒。如本文使用的纳米线为非晶体意味着纳米线具有无序的原子结构。
根据一实施例，纳米线阵列中的纳米线由半导体或电绝缘材料组成。导体可为具有基本上为零的带隙的材料。导体的导电率大体在103S/cm以上。半导体可为具有达约3eV的有限带隙的材料，且通常具有到103到10-8S/cm范围内的导电率。电绝缘材料可为具有大于约3eV的带隙的材料且通常具有10-8S/cm以下的导电率。
根据一实施例，纳米线阵列中的纳米线包括选自由Si、Ge、GaN、GaAs、SiO2和Si3N4组成的群组的一种或一种以上材料。
根据一实施例，纳米线阵列中的纳米线的半径从10到1000nm；纳米线的长度从0.01到10μm。
根据一实施例，纳米线阵列中的纳米线和衬底具有大体相同的化学组成。如本文使用的术语“相同化学组成”意味着衬底和纳米线为相同材料。此处的术语“大体相同”意味着化学组成相差不大于3%，优选不大于1%。
根据一实施例，纳米线阵列中的纳米线和衬底为单晶体，且纳米线的晶格和衬底的晶格在其间的界面处为连续的、即，纳米线与衬底之间的界面处不存在晶界。
根据一实施例，纳米线阵列中的纳米线布置成例如矩形网格、正方形网格、同心圆、六边形网格等预定图案。
根据一实施例，沿着平行于衬底的方向纳米线距所述纳米线的最近相邻者的距离(也称为“间距”或“间距距离”)至少为800nm，优选至多10000nm。
根据一实施例，纳米线阵列的反射光谱具有下沉；下沉位置随着纳米线的半径减小而移位到较短波长；且下沉位置与沿着平行于衬底的方向纳米线距所述纳米线的最近相邻者的距离无关。如本文使用的反射光谱意味着某一波长处经反射光的密度与相同波长处入射光的密度的比率(作为波长的函数)。如本文使用的反射光谱中的“下沉”意味着反射光谱中的区，在其中反射小于反射光谱中的周围区中的反射。如本文使用的“下沉位置”意味着反射为最小的下沉中的波长。
根据一实施例，纳米线阵列的反射光谱与照明的入射角无关。
根据一实施例，如本文使用的入射角意味着入射在衬底上的光线与在入射点处垂直于衬底的线之间的角度。
根据一实施例，一种制造纳米线阵列的方法包括：(a)用抗蚀剂层涂覆衬底；(b)使用光刻技术在抗蚀剂层中产生点图案；(c)在抗蚀剂层中使图像显影；(d)沉积掩模层；(e)起离抗蚀剂层；(f)通过对衬底进行干式蚀刻形成纳米线；(g)任选地移除掩模层；其中点的形状和大小决定纳米线的横截面形状和大小。
根据一实施例，如本文使用的抗蚀剂层意味着用于将图案转移到上面沉积抗蚀剂层的衬底的薄层。抗蚀剂层可经由光刻而图案化以形成在后续处理步骤期间保护下伏衬底的选定区域的(亚)微米级临时掩模。抗蚀剂通常为聚合物或其前驱体与已针对给定光刻技术特别制备的其它小分子(例如，光生酸剂)的专门混合物。光学光刻期间使用的抗蚀剂称为光致抗蚀剂。电子束光刻期间使用的抗蚀剂称为电子束抗蚀剂。如本文使用的“点”意味着离散区。光刻技术可为光学光刻、电子束光刻、全息光刻。光学光刻是在微制造中用以选择性移除衬底的薄膜或大块的部分的工艺。其使用光将几何图案从光掩模转移到衬底上的光敏化学光致抗蚀剂或简单地“抗蚀剂”。一系列化学处理接着将曝光图案雕刻到光致抗蚀剂下方的材料中。在复杂集成电路(例如，现代CMOS)中，晶片将通过光学光刻循环达50次。电子束光刻是在用膜(称为抗蚀剂)涂覆的表面上以图案化方式扫描电子束(“曝光”抗蚀剂)且选择性移除抗蚀剂的曝光或未曝光区(“显影”)的实践。与光学光刻一样，目的是在抗蚀剂中形成可随后通常通过蚀刻转移到衬底材料的非常小的结构。其经开发用于制造集成电路，且还用于形成纳米技术人工制品。全息光刻(也称为干涉光刻)是用于在不使用复杂的光学系统或光掩模的情况下图案化精细特征的规则阵列的技术。基本原理与干涉测量术或全息术中相同。两个或两个以上相干光波之间的干涉图案设置并记录在记录层(光致抗蚀剂)中。此干涉图案由表示强度最小值和最大值的一系列周期性边缘组成。在曝光后光学光刻处理后，即刻出现对应于周期性强度图案的光致抗蚀剂图案。如本文使用的掩模层意味着保护衬底的下伏部分使其免受蚀刻的层。如本文使用的“干式蚀刻”意味着在不使用液体蚀刻剂的情况下的蚀刻技术。
根据一实施例，一种使用纳米线阵列1作为光电检测器的方法包括：在纳米线阵列上照射光；测量纳米线上的光电流；测量衬底上的光电流；将纳米线上的光电流与衬底上的光电流进行比较。如本文使用的光电检测器意味着光的传感器。
根据一实施例，一种使用纳米线阵列作为静态彩色显示器的方法包括：从待显示的图案确定纳米线的位置和半径；用所确定的半径在衬底上的所确定位置处制造纳米线；在纳米线阵列上照射白光。
根据一实施例，一种动态彩色显示器包括纳米线阵列，即衬底的与纳米线相对的一侧上可独立寻址的白光源的阵列，其中每一白光源对应于纳米线的一者且在衬底平面中与所述纳米线的一者对准。如本文使用的“可独立寻址的白光源”意味着每一光源可独立于其它光源而控制、调整、开启或关闭。如本文使用的“白光”意味着不同波长的可见光以相等比例的组合。
根据一实施例，动态彩色显示器中的白光源为白色LED。LED也称为发光二级管。存在使用LED产生白光的两种主要方式。一种是使用发射三种基色(红、绿和蓝)且接着将所有颜色混合以形成白光的个别LED。另一种是使用荧光体材料将单色光从蓝色或UV LED转换为广谱白光，与荧光灯泡的工作原理大体相同。
根据一实施例，在动态彩色显示器中，第一群组的纳米线具有第一半径，第二群组的纳米线具有第二半径，且第三群组的纳米线具有第三半径，其中第一群组的纳米线仅允许红光通过，第二群组的纳米线仅允许绿光通过，且第三群组的纳米线仅允许蓝光通过。
根据一实施例，一种亚微米彩色滤光片包括所述纳米线阵列，其中每一纳米线放置在光电检测器上，其中仅允许具有每一纳米线的反射光谱的下沉中的波长的入射光到达下方的光电检测器。一种使用所述亚微米彩色滤光片的方法包括在纳米线阵列上照射白光，检测纳米线下方所透射的光。
根据一实施例，纳米线的半径与纳米线的间距的比率至多为0.5。
实例
图1A和1B展示根据一实施例的纳米线阵列100的示意图。纳米线阵列100包括衬底110和从衬底110基本上垂直延伸的多条纳米线120(例如，纳米线120与衬底110之间的角度从85°到90°)。每一纳米线120优选具有沿着其整个长度的均一化学组成。每一纳米线120为单晶体、多晶体或非晶体。纳米线120优选由适宜的半导体或电绝缘材料制成，其实例包含Si、Ge、GaN、GaAs、SiO2、Si3N4等。纳米线120的折射率与覆层130(即，围绕纳米线120的材料)的折射率的比率(即，折射率对比)优选至少为2，更优选至少为3。纳米线120的半径优选从10到1000nm，更优选从20到80nm，最优选从45到75nm。纳米线120的长度优选从0.01到10μm，更优选0.1到5μm。纳米线120和衬底110优选具有大体相同的化学组成。纳米线120和衬底110的晶格(如果两者均为单晶体)优选在其间的界面处为连续的。纳米线120可具有相同或不同形状和大小。纳米线120可布置成任何适宜的图案，其实例包含矩形网格、正方形网格、六边形网格、同心圆等。沿着平行于衬底的方向的纳米线阵列100的纳米线120距纳米线阵列100的最近相邻纳米线的距离也称为“间距”或“间距距离”。纳米线120的半径与所述间距的比率不应过高，即优选至多0.5，更优选至多0.1。如果此比率过高，那么纳米线120彼此耦合(即，纳米线120总体与入射光交互使得纳米线阵列100的光谱特性(例如，反射光谱)与纳米线阵列100中的个别纳米线120的光谱特性不同)，且纳米线阵列100对于肉眼呈现为黑色且无法充当彩色滤光片或显示器。优选地，纳米线120的数量密度(衬底110上每单位面积的纳米线120的平均数目)因此至多约为1.8/μm2。优选地，纳米线120的间距至少为500nm。
图2A-2D展示纳米线阵列100的示范性扫描电子显微镜(SEM)图像。在这些示范性SEM图像中，由硅组成的10,000条纳米线120在由硅组成的衬底110上布置成100μm×100μm正方形网格，其中一条纳米线沿着平行于衬底的方向距纳米线阵列100的最近相邻纳米线的距离约为1μm。纳米线120的长度约为1μm。纳米线120的半径约为45nm。
图3A展示五个纳米线阵列100的测得的反射光谱，所述五个纳米线阵列100的每一者由由硅组成的10,000条纳米线120组成，所述纳米线120在由硅组成的衬底110上布置成100μm×100μm正方形网格，其中这些纳米线阵列100的间距和纳米线120的长度约为1μm。这五个纳米线阵列100为相同的，只是其纳米线120分别具有45nm、50nm、55nm、60nm、65nm和70nm的均一半径。在白光照明下，这些纳米线阵列100对于肉眼呈现为不同颜色(例如，红、绿、蓝、青等)。这些纳米线阵列100的每一者的反射光谱展示一个下沉，即在下沉内的波长处的入射光与在下沉外的波长处的入射光相比以较小的比例反射。下沉的位置决定着纳米线阵列100的表观颜色。举例来说，如果下沉的位置在700与635nm之间，那么纳米线阵列100呈现为青色；如果下沉的位置在560与490nm之间，那么纳米线阵列100呈现为品红色；如果下沉的位置在490与450nm之间，那么纳米线100呈现为黄色。下沉的位置从具有最大纳米线120(半径为70nm)的纳米线阵列100中的约770nm逐步移位到具有最小纳米线120(半径为45nm)的纳米线阵列100中的约550nm。这五个纳米线阵列100中下沉的位置范围跨越整个可见光谱。下沉的位置与纳米线阵列100的间距无关，这表明下沉不是归因于衍射或耦合效应。尽管不需要衍射和耦合效应，但当此类效应存在时，纳米线阵列100可工作。纳米线阵列100优选具有大于800nm的间距，使得衍射和耦合效应不会起支配作用。下沉的量值随着间距增大而减小，因为较大间距导致纳米线120的较低数量密度。图3A还说明下沉的量值随着波长中下沉的位置而增加，这是归因于衬底材料在其带隙上方的较强材料色散(即，衬底110的折射率在高于其材料的带隙的波长处增加，而纳米线120中的引导模式的有效折射率保持接近空气的折射率，这导致引导模式与衬底110之间的较高折射率对比以及因此较短波长处下沉中的较强反射(即，下沉的较小量值))。对于具有较粗纳米线的纳米线阵列，其反射光谱中可存在一个以上下沉，且纳米线阵列可以颜色的组合呈现。
可利用经聚焦或校准入射照明来测量反射光谱。在如图7A所示的示范性实施例中，来自光源810的入射白光由20x物镜830(数值孔径=0.5)聚焦；经反射光被相同物镜830收集且由分束器820部分反射到分光仪850。在物镜830的图像平面处使用虹膜840来拒绝除纳米线阵列100反射的光的任何光。在如图7B所示的另一示范性测量中，来自光源815的入射白光由透镜835校准且经由分束器825导向纳米线阵列100；经反射光被10x物镜865收集到分光仪855。在物镜865的图像平面处使用虹膜845来拒绝除纳米线阵列100反射的光的任何光。可使用银镜来测量经反射光的绝对强度，其用于计算(即，正规化)反射光谱。发现反射光谱基本上与入射角无关，其指示反射光谱由入射光的法线分量与纳米线阵列100之间的耦合动力学控制。
图3B展示使用有限差时域(FDTD)方法的图3A中的五个纳米线阵列100的模拟反射光谱。FDTD方法是用数值模拟结构中的光的传播的方法且可用于预测传播的详细特性。所述模拟反射光谱相对于作为纳米线半径的函数的下沉位置在数量上与图3A的测得的反射光谱较好地一致。与测得的反射光谱相比，模拟光谱具有较浅下沉，这可归因于实际纳米线阵列中变粗糙的衬底表面与模拟中假定的理想地平坦的衬底表面之间的反射率差。使用Lumerical(Lumerical Solutions公司)的FDTD和MODE解决程序来执行模拟。在MODE解决程序中通过简单地指定纳米线半径、间距和材料特性构造二维模型。接着在衬底平面中强加周期性边界条件。这些模式用于研究作为波长的函数的纳米线120的基本模式的演进。在Lumerical的FDTD解决程序中通过指定完整的纳米线几何形状以及间距和材料特性构造完整的三维模型。强加衬底平面中的周期性边界条件和沿着z轴(衬底110的法线方向)的吸收边界条件。沿着z轴启动适当带宽的平面波脉冲源，且放置监视器以计算作为波长的函数的总体被吸收、透射和反射的流量。纳米线120和衬底110假定在模拟中为硅。
图3C展示在测得和模拟反射光谱两者中作为纳米线120的半径的函数的下沉的位置，其展示对纳米线半径的基本上线性的相依性。基本上线性的相依性指示测得与模拟反射光谱之间的强相关或一致。
如图3A和3B所示的纳米线阵列100的波长选择性反射源自每一纳米线120的基本引导模式(HE1,1模式)的场分布的强波长相依性。如本文使用的基本引导模式意味着具有最低频率的引导模式。如本文使用的纳米线120的引导模式意味着场在纳米线120外部各处在横向方向(平行于衬底110的方向)上单调衰减且不丢失功率到辐射的模式。对称性防止纳米线120与其它引导模式之间的有效交互，且纳米线120太小而不能支持较高级HE1,m模式(具有较高频率的引导模式)。图4A-4C展示不同波长处H1,1模式的主要横向分量(例如，Ey)(垂直于所述模式的传播方向的场分量)。在反射光谱的下沉中的波长处，每一纳米线120的HE1,1模式的场分布表征为部分包含在纳米线120中且部分延伸到覆层130中的横向场，如图4A所示。这些波长处的入射光可有效激励HE1,1模式且由纳米线120引导到衬底110或被纳米线120吸收。纳米线120与覆层之间的较大折射率对比导致具有与纳米线120的显著重叠的不可忽略的纵向场分量(Ez)(即，平行于模式的传播方向的场分量)；由于模式吸收与包含Ez的电磁能量的空间密度成比例，所以这些波长处的入射光可有效耦合到纳米线120(即，入射光的显著部分在纳米线120内部传播)而且被纳米线120吸收。在显著低于反射光谱的下沉的波长处，每一纳米线120的HE1,1模式的场分布表征为归因于纳米线120与覆层之间的较大折射率对比而基本上限于纳米线120中的横向场，如图4B所示。这些波长处的入射光无法有效激励HE1,1模式且因此无法被纳米线120有效引导或吸收；这些波长处的入射光大体被衬底110与覆层130的界面反射。在显著高于反射光谱的下沉的波长处，每一纳米线120的HE1,1模式的场分布表征为基本上从纳米线120驱逐的横向场，如图4C所示。这些波长处的入射光可有效激励HE1,1模式，但这些波长处的HE1,1模式无法被纳米线120有效引导或吸收；这些波长处的入射光大体被衬底110与覆层的界面反射。图4D展示垂直入射在纳米线阵列100上的白光的可能路径的示意说明。超出反射光谱中的下沉的波长的光被衬底110反射；下沉中的波长的光被纳米线120引导以透射穿过衬底110或被纳米线120吸收。
反射光谱的下沉的位置由纳米线120的半径决定。图5A展示具有不同纳米线半径(分别迹线501、502和503中为45nm、55nm和70nm)的三个纳米线阵列100的H1,1模式的模拟有效折射率(neff)(作为波长的函数)，其中通过FDTD方法在周期性边界条件下在1μm乘1μm单位单元上获得neff，纳米线阵列100的材料假定为硅，覆层假定为空气，且纳米线120的长度假定为1μm。当光在包括具有不同折射率的材料的媒介中传播时，光表现为似乎其在具有值为所述材料的折射率值的某一中间值的均一折射率的均一媒介中传播。此均一折射率称为有效折射率。周期性边界条件是通常用于将较大系统建模为小单位单元的无限周期性瓦片的一组边界条件。
在每一迹线中，针对短于图3A中的对应下沉位置的波长，neff急剧增加且接近nSi(硅的折射率)。在neff接近nair(空气的折射率)的情况下发生下沉。neff作为波长的函数(也称为色散曲线)随着纳米线半径增加而移位到较长波长。
图5B展示图5A的纳米线阵列100的(通过FDTD方法获得的)模拟吸收光谱(迹线511、512和513分别对应于具有45nm、55nm和70nm半径的纳米线的纳米线阵列)。对于蓝光(<500nm)，H1,1模式的超过90%可在纳米线的1μm长度中被吸收。图5C将具有45nm半径的纳米线120的纳米线阵列100(对应于迹线501和511)中的衬底110的模拟吸收光谱521、此纳米线阵列100中45nm半径的纳米线120的模拟吸收光谱523以及此纳米线阵列100中的模拟反射光谱522进行比较。反射光谱522中的下沉相对于纳米线120的吸收光谱523中的峰值稍许红移，这指示下沉的长波长边沿更多产生自到衬底110的耦合。然而，这展示被引导的光实际上吸收在纳米线120中，且因此反射光谱523的形状和纳米线120中吸收的光的量可通过更改其长度来控制。衬底110吸收的光(参见迹线521)可由纳米线120相对于平面衬底的光吸收增强或减弱，这取决于纳米线120吸收还是仅耦合到衬底110。纳米线阵列100的滤光特性与其不同部分中的吸收有关的事实可导致光电子装置中的有用应用。
一种制造纳米线阵列100的方法包含：(a)用抗蚀剂层(例如、电子束抗蚀剂、光学抗蚀剂等)涂覆衬底110；(b)使用光刻技术(例如，光学光刻、电子束光刻、全息光刻等)在抗蚀剂层中产生点图案；(c)在抗蚀剂层中使图像显影；(d)沉积掩模层(例如，Al、Cr、SiO2、Si3N4、Au、Ag等)；(e)起离抗蚀剂层；(f)通过对衬底110进行干式蚀刻形成纳米线120；(g)任选地移除掩模层；其中点的形状和大小决定纳米线120的横截面形状和大小。抗蚀剂可为聚(甲基丙烯酸甲酯)(可从位于马萨诸塞州的牛顿市的MicroChem购得)。掩模层可为通过例如电子束蒸发、热蒸发、溅镀等适宜的技术沉积的铝。掩模层可为约40nm厚。衬底110可为单晶硅晶片。可在电感耦合等离子体-反应离子蚀刻器(例如可从位于加州红木城的SurfaceTechnology Systems购得)中实行干式蚀刻。示范性干式蚀刻工艺包含在室温下交替蚀刻和沉积步骤，其中分别在其中使用60seem的SF6和160seem的C4F8。掩模层可使用适宜的蚀刻剂(例如，可从位于马萨诸塞州的丹弗斯市的Transene Company公司购得的型A铝抗蚀剂)或溶剂(例如，酸、碱或有机溶剂)移除。可在例如可从位于马萨诸塞州的皮博迪市的CarlZeiss NTS购得的Zeiss Ultra55等SEM中拍摄SEM图像。
一种使用纳米线阵列100作为光电检测器的方法包括：在纳米线阵列100上照射光；测量纳米线120上的光电流；测量衬底110上的光电流；将纳米线120上的光电流与衬底110上的光电流进行比较。
纳米线阵列100还可用作亚微米彩色滤光片。举例来说，纳米线阵列100中的纳米线120的每一者可放置在光电检测器上。仅具有纳米线的反射光谱的下沉中的波长的入射光可到达此纳米线下方的光电检测器。一种使用纳米线阵列100作为亚微米彩色滤光片的方法包括在纳米线阵列100上照射白光，检测纳米线120下方所透射的光。
一种使用纳米线阵列100作为静态彩色显示器的方法包括：从待显示的图案确定纳米线的位置和半径；用所确定的半径在衬底上的所确定位置处制造纳米线；在纳米线阵列上照射白光。此处的词语“静态”意味着显示器仅可展示一个固定图像。通过适当选择个别纳米线放置和纳米线阵列100中的半径，纳米线阵列100可在白光照明下显示彩色图像。
纳米线阵列还可用做动态彩色显示器。此处的词语“动态”意味着显示器可在不同时间显示不同图像。根据一实施例，动态彩色显示器包括纳米线阵列100，即衬底110的与纳米线120相对的一侧上可独立寻址的白光源的阵列，其中每一白光源对应于纳米线120的一者且在衬底平面中与所述纳米线120的一者对准。纳米线120可具有预定半径且因此仅允许来自光源的所要波长的光通过。举例来说，图6展示动态彩色显示器的四个像素的示意俯视图。纳米线715、725、735和745分别对应于白光源710、720、730和740且与其对准。白光源可为白色LED。纳米线715具有约45nm的半径且仅允许红光通过。纳米线725和735具有约60nm的半径且仅允许绿光通过。纳米线745具有约70nm的半径且仅允许蓝光通过。可独立寻址的白光源可由扫描白光束代替。
虽然本文已揭示各个方面和实施例，但所属领域的技术人员将了解其它方面和实施例。本文揭示的各个方面和实施例是出于说明的目的且不希望具有限制性，其真实范围和精神由所附权利要求书指示。

Claims (25)

1.一种纳米线阵列，其包括衬底和从所述衬底垂直延伸的多条纳米线；其中所述纳米线阵列能够作为亚微米彩色滤光片操作；其中所述纳米线的每一者在所述纳米线的纵向方向上从所述纳米线的一端到所述纳米线的相对端具有均一的化学组成，其中所述纳米线阵列的反射光谱具有下沉，下沉位置随着所述纳米线的半径减小而移位到较短波长，且所述下沉位置与一纳米线沿着平行于所述衬底的方向距所述纳米线的最近相邻者的距离无关。
2.根据权利要求1所述的纳米线阵列，其中：
所述纳米线的折射率至少为所述纳米线的覆层的折射率的两倍。
3.根据权利要求1所述的纳米线阵列，其中所述纳米线的数量密度至多为1.8/μm2。
4.根据权利要求1所述的纳米线阵列，其中所述纳米线的每一者为单晶体、多晶体或非晶体。
5.根据权利要求1所述的纳米线阵列，其中所述纳米线由半导体组成。
6.根据权利要求1所述的纳米线阵列，其中所述纳米线包括选自由Si、Ge、GaN、GaAs、SiO2和Si3N4组成的群组的一种或一种以上材料。
7.根据权利要求1所述的纳米线阵列，其中所述纳米线的半径是从10到1000nm；所述纳米线的长度是从0.01到10μm。
8.根据权利要求1所述的纳米线阵列，其中所述纳米线和所述衬底具有相同的化学组成。
9.根据权利要求1所述的纳米线阵列，其中所述纳米线和所述衬底为单晶体，且所述纳米线的晶格和所述衬底的晶格在其间的界面处为连续的。
10.根据权利要求1所述的纳米线阵列，其中所述纳米线布置成预定图案。
11.根据权利要求1所述的纳米线阵列，其中一纳米线沿着平行于所述衬底的方向距所述纳米线的最近相邻者的距离至少为800nm。
12.根据权利要求1所述的纳米线阵列，其中其反射光谱与照明的入射角无关。
13.根据权利要求1所述的纳米线阵列，其包括衬底和从所述衬底延伸的多条纳米线；其中所述纳米线的半径与所述纳米线的间距的比率至多为0.5。
14.一种制造根据权利要求1所述的纳米线阵列的方法，其包括：
使用光刻技术在抗蚀剂层中产生点图案；
通过对衬底进行蚀刻形成所述纳米线；
其中所述点的形状和大小决定所述纳米线的横截面形状和大小。
15.根据权利要求14所述的方法，其进一步包括：
用所述抗蚀剂层涂覆所述衬底；
在所述抗蚀剂层中使所述图案显影；
沉积掩模层；
起离所述抗蚀剂层；以及
任选地移除所述掩模层。
16.根据权利要求14所述的方法，其中所述蚀刻是干式蚀刻。
17.一种使用根据权利要求1所述的纳米线阵列作为光电检测器的方法，其包括：在所述纳米线阵列上照射光；测量所述纳米线上的光电流；测量所述衬底上的光电流；将所述纳米线上的所述光电流与所述衬底上的所述光电流进行比较。
18.一种使用根据权利要求1所述的纳米线阵列作为静态彩色显示器的方法，其包括：从待显示的图像确定所述纳米线的位置和半径；用所述所确定的半径在所述衬底上的所述所确定位置处制造所述纳米线；在所述纳米线阵列上照射白光。
19.一种包括根据权利要求1所述的纳米线阵列的亚微米彩色滤光片，其中每一纳米线放置在光电检测器上，其中仅允许具有每一纳米线的反射光谱的下沉中的波长的入射光到达下方的所述光电检测器。
20.一种使用根据权利要求19所述的亚微米彩色滤光片的方法，其包括在所述纳米线阵列上照射白光，检测所述纳米线下方所透射的光。
21.根据权利要求1所述的纳米线阵列，其中所述纳米线由电绝缘材料组成。
22.一种纳米线阵列，其包括衬底和从所述衬底垂直延伸的多条纳米线；其中所述纳米线不实质上耦合；其中所述纳米线的每一者在所述纳米线的纵向方向上从所述纳米线的一端到所述纳米线的相对端具有均一的化学组成，其中所述纳米线阵列的反射光谱具有下沉，下沉位置随着所述纳米线的半径减小而移位到较短波长，且所述下沉位置与一纳米线沿着平行于所述衬底的方向距所述纳米线的最近相邻者的距离无关。
23.一种动态彩色显示器，其包括纳米线阵列，所述纳米线阵列包括衬底和从所述衬底垂直延伸的多条纳米线，所述纳米线阵列能够作为亚微米彩色滤光片操作；所述衬底的与所述纳米线相对的一侧上的能够独立寻址的白光源阵列，其中每一白光源对应于所述纳米线的一者且在衬底平面中与所述纳米线的一者对准，其中所述纳米线阵列的反射光谱具有下沉，下沉位置随着所述纳米线的半径减小而移位到较短波长，且所述下沉位置与一纳米线沿着平行于所述衬底的方向距所述纳米线的最近相邻者的距离无关。
24.根据权利要求23所述的动态彩色显示器，其中所述白光源为白色LED或扫描白光束。
25.根据权利要求23所述的动态彩色显示器，其中第一群组的所述纳米线具有第一半径，第二群组的所述纳米线具有第二半径，且第三群组的所述纳米线具有第三半径，其中所述第一群组的所述纳米线仅允许红光通过，所述第二群组的所述纳米线仅允许绿光通过，且所述第三群组的所述纳米线仅允许蓝光通过。
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