CN103084968A - Grinding terminal point detecting method and device and grinding machine table - Google Patents

Grinding terminal point detecting method and device and grinding machine table Download PDF

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Publication number
CN103084968A
CN103084968A CN2013100625075A CN201310062507A CN103084968A CN 103084968 A CN103084968 A CN 103084968A CN 2013100625075 A CN2013100625075 A CN 2013100625075A CN 201310062507 A CN201310062507 A CN 201310062507A CN 103084968 A CN103084968 A CN 103084968A
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China
Prior art keywords
grinding
wafer
polishing pad
pad
layer
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Pending
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CN2013100625075A
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Chinese (zh)
Inventor
张明华
严钧华
黄耀东
方精训
彭树根
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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Priority to CN2013100625075A priority Critical patent/CN103084968A/en
Publication of CN103084968A publication Critical patent/CN103084968A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a grinding terminal point detecting method which comprises the following steps: a laser is emitted to a to-be-grinded layer of a wafer; the laser is reflected by the wafer; and whether a grinding terminal point is reached or not is judged by analyzing change of light intensity signals of reflected light reflected by the wafer. The invention further discloses a grinding terminal point detecting device and a grinding machine table. Whether materials with different reflectance in the next layer are grinded or not is judged through analysis of the change of the light intensity of the reflected light by utilizing difference of reflectance between the grinded layer of the wafer and the next layer of materials. When the grinded layer of the wafer is grinded partly, and the materials with different reflectance in the next layer are exposed, reflected light signals start changing. When the grinded layer of the wafer is wholly grinded, change of the reflected light signals slows down, and a grinding terminal point can be captured through a grinding terminal point detecting procedure. Stability and repeatability of detecting are high due to the fact that grinding terminal point optical detecting signals are obvious, and the grinding terminal point detecting method can be widely applied to various chemistry grinding processes in semiconductor fabrication technology.

Description

Grinding endpoint detection method, device and grinder station
Technical field
The present invention relates to the cmos semiconductor device fabrication, particularly solid abrasive chemical machinery technique grinding endpoint detection method, device and grinder station.
Background technology
The structure of existing solid abrasive work-table of chemicomechanical grinding mill as depicted in figs. 1 and 2, described grinder station, comprise abrasive disk 1, polishing pad 2, grinding pad 3, abrasive disk CD-ROM drive motor 4, be used for driving grinding pad 3 mobile grinding pad driving mechanism and the grinding head 7 that is used for absorption wafer 6 on described polishing pad 2, described polishing pad 2 is arranged at the top of described abrasive disk 1, described abrasive disk CD-ROM drive motor 4 drives described abrasive disk 1 and rotates, and described grinding head 7 is positioned at the top of described grinding pad 3.This grinder station also comprises motor current arrangement for detecting 11, described motor current arrangement for detecting and 4 series connection of described abrasive disk CD-ROM drive motor.
This grinder station only has a kind of detection method that utilizes motor current to change to survey grinding endpoint at present, and when utilizing wafer 6 to be ground to different materials, frictional force changes and then makes signal transition point that abrasive disk CD-ROM drive motor 4 electric currents that drive abrasive disk 1 change as grinding endpoint.If want motor current sniffer 11 to realize the successful detection of grinding endpoint, require the layer that is polished of wafer 6 to produce with grinding stop-layer (namely being polished lower one deck of layer) frictional force that differs apparent in view in chemical mechanical planarization process.The current curve that motor current is surveyed grinding endpoint is illustrated in fig. 3 shown below, and the amplitude of variation of the motor current signal that detects in process of lapping is little.Therefore, this detection method, the accuracy that catches the grinding wafer terminal point is not very high, and this detection method scope of application is less, and is repeatable more relatively poor with stability.
Therefore, how to provide that a kind of accuracy is high, good stability, can repeat and grinding endpoint detection method, device and grinder station applied widely is the technical problem that those skilled in the art need to be resolved hurrily.
Summary of the invention
The objective of the invention is to disclose a kind of grinding endpoint detection method and device for the solid abrasive chemical mechanical milling tech, can accuracy high, good stability, repeatably survey the grinding endpoint of wafer.
To achieve the above object, the present invention adopts following technical scheme:
A kind of grinding endpoint detection method comprises the steps:
Step 1, emission one laser is to the layer that is polished of wafer;
Step 2, described wafer reflects described laser;
Step 3 changes to determine whether the arrival grinding endpoint by the catoptrical light intensity signal of analyzing via described wafer reflection.
Preferably, in above-mentioned grinding endpoint detection method, in described step 3, when the layer that is polished of wafer has been ground when exposing the different material of lower floor's reflectivity by local, described catoptrical light intensity signal begins to change, when the layer that is polished of wafer has all been ground rear described catoptrical light intensity signal and changes when easing up, judge that the layer that is polished of wafer arrives a grinding endpoint.
The invention also discloses a kind of grinding endpoint sniffer, be used for to survey being polished layer and whether arriving grinding endpoint of the wafer that is positioned on grinding pad, comprise generating laser and signal detecting device, the laser that described generating laser sends is incident to described signal detecting device after the face that the is polished reflection of described wafer.
Preferably, at above-mentioned grinding endpoint sniffer, described generating laser and described signal detecting device are arranged in an open-topped chamber in abrasive disk, are positioned at the polishing pad of described abrasive disk top and grinding pad correspondence and are provided with for described laser and wear polishing pad window and the polishing pad window of penetrating.
Preferably, at above-mentioned grinding endpoint sniffer, described polishing pad window and described polishing pad window adopt light transmissive material.
the invention also discloses a kind of grinder station, comprise abrasive disk, polishing pad, grinding pad, the abrasive disk CD-ROM drive motor, be used for driving the grinding pad driving mechanism that grinding pad moves on described polishing pad, and the grinding head that is used for the absorption wafer, described polishing pad is arranged at the top of described abrasive disk, the described abrasive disk of described abrasive disk drive motor rotates, described grinding head is positioned at the top of described grinding pad, also comprise generating laser and signal detecting device, the laser that described generating laser sends is incident to described signal detecting device after the face that the is polished reflection of described wafer.
Preferably, in above-mentioned grinder station, described grinding pad is provided with a polishing pad window along the longitudinal middle part of self, described polishing pad is provided with the polishing pad window in a side in self center of circle, described polishing pad window is positioned at the below of described polishing pad window, and on described abrasive disk, the position of corresponding described polishing pad offers one for the container cavity that holds described generating laser and described signal sensor.
Preferably, in above-mentioned grinder station, described polishing pad window and described polishing pad window adopt light transmissive material.
Preferably, in above-mentioned grinder station, described grinding pad driving mechanism comprises that grinding pad drives reel and grinding pad reclaims reel, one end of described grinding pad is set around described grinding pad and drives on reel, the other end of described grinding pad is set around described grinding pad and reclaims on reel, and described grinding pad drives reel and described grinding pad reclaims the both sides that reel is arranged at respectively described abrasive disk.
Grinding endpoint detection method provided by the invention, device and grinder station, the detecting principle that adopts is to utilize the otherness that is polished layer and lower layer of material reflectivity of wafer, change to judge whether to be ground to the different material of lower one deck reflectivity by analyzing catoptrical light intensity, when the layer that is polished of wafer has been ground when exposing the different material of lower floor's reflectivity by local, reflected light signal begins to change, the whole back reflection change in optical signal that have been polished that are polished layer on wafer ease up, and can catch grinding endpoint this moment by the grinding endpoint locator(-ter).Because the grinding endpoint optical detection signal is apparent in view, so grinding endpoint detection method, device and grinder station can be widely used in the number of chemical grinding technics in semiconductor fabrication, and survey stability and repeatability higher.So this grinding endpoint detection method, device and grinder station can make solid abrasive cmp technology be applicable to the chemical mechanical milling tech of more kinds of different materials.
Description of drawings
Grinding endpoint detection method of the present invention, device and grinder station are provided by following embodiment and accompanying drawing.
Fig. 1 is the structural representation of existing grinder station;
Fig. 2 is grinding pad in existing grinder station and the schematic top plan view of polishing pad;
Fig. 3 is the curve synoptic diagram that is used for the detectable signal of detection grinding endpoint in existing grinding endpoint detection method;
Fig. 4 is the flow chart of the grinding endpoint detection method of embodiments of the invention one;
Fig. 5 is the structural representation of the grinder station of embodiments of the invention two;
Fig. 6 is grinding pad in embodiments of the invention two and the schematic top plan view of polishing pad;
Fig. 7 is the schematic diagram of the detectable signal for surveying grinding endpoint of the present invention;
Fig. 8 is the structural representation of the grinding endpoint sniffer of embodiments of the invention three.
In figure, 1-abrasive disk, 2-polishing pad, 21-polishing pad window, 3-grinding pad, 31-polishing pad window, 4-abrasive disk CD-ROM drive motor, 51-grinding pad drive reel, the 52-grinding pad reclaims reel, 6-wafer, 7-grinding head, 8-generating laser, 9-signal detecting device, 10-chamber, 11-motor current arrangement for detecting.
The specific embodiment
Below will be described in further detail grinding endpoint detection method of the present invention, device and grinder station.
Below with reference to accompanying drawings the present invention is described in more detail, has wherein represented the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here and still realize beneficial effect of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example according to the restriction of relevant system or relevant business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
For purpose of the present invention, feature are become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
Embodiment one
See also Fig. 4, the present embodiment provides a kind of solid abrasive chemical mechanical milling tech grinding endpoint detection method, comprises the steps:
Step 1 S1, emission one laser is to the layer that is polished of wafer;
Step 2 S2, described wafer reflects described laser;
Step 3 S3 changes to determine whether the arrival grinding endpoint by the light intensity signal of analyzing the reverberation (laser that namely reflects via described wafer) that reflects via described wafer, namely whether is ground to the different material of lower one deck reflectivity.
Better, in the solid abrasive chemical mechanical milling tech grinding endpoint detection method of the present embodiment, in described step 3, (this is polished layer and is positioned at the top layer when the layer that is polished of wafer, or be positioned at wafer and be polished face) has been ground when exposing the different material of lower floor's reflectivity by local, described catoptrical light intensity signal begins to change, when the layer that is polished of wafer has all been ground rear described catoptrical light intensity signal variation when easing up, at this moment, judge layer arrival grinding endpoint that be polished of wafer.
The detecting principle that above-mentioned solid abrasive chemical mechanical milling tech grinding endpoint detection method adopts is: the otherness that is polished layer and lower layer of material reflectivity of utilizing wafer, change to judge whether to be ground to the different material of lower one deck reflectivity by analyzing catoptrical light intensity, when the layer that is polished of wafer has been ground when exposing the different material of lower floor's reflectivity by local, reflected light signal begins to change, the whole back reflection change in optical signal that have been polished that are polished layer on wafer ease up, and can catch grinding endpoint this moment by the grinding endpoint locator(-ter).Grasping means is similar in prior art the crawl to the curent change of abrasive disk CD-ROM drive motor, therefore do not launch at this.Because the grinding endpoint optical detection signal is apparent in view, therefore, this solid abrasive chemical mechanical milling tech grinding endpoint detection method can detect grinding endpoint more accurately, timely, improve stability and the security of technique, and the method can be widely used in the number of chemical grinding technics in semiconductor fabrication, and detection is stable and repeatability is higher.
Embodiment two
see also Fig. 5 to Fig. 6, the present embodiment provides a kind of grinder station, comprise abrasive disk 1, polishing pad 2, grinding pad 3, abrasive disk CD-ROM drive motor 4, be used for driving the grinding pad driving mechanism that grinding pad 3 moves on described polishing pad 2, and the grinding head 7 that is used for absorption wafer 6, described polishing pad 2 is arranged at the top of described abrasive disk 1, described abrasive disk CD-ROM drive motor 4 drives described abrasive disk 1 and rotates, described grinding head 7 is positioned at the top of described grinding pad 3, described grinder station also comprises generating laser 8 and signal detecting device 9, the laser that described generating laser 8 sends is incident to described signal detecting device 9 after the face that the is polished reflection of described wafer 6.Be understandable that, the layer that is polished of described wafer 6 is positioned at the face that is polished of wafer 6.
What this grinder station utilized wafer 6 is polished layer and the otherness of lower layer of material reflectivity, change to judge whether to be ground to the different material of lower one deck reflectivity by analyzing catoptrical light intensity, when the layer that is polished of wafer 6 has been ground when exposing the different material of lower floor's reflectivity by local, reflected light signal begins to change, the whole back reflection change in optical signal that have been polished that are polished layer on wafer 6 ease up, and can catch grinding endpoint this moment by the grinding endpoint locator(-ter).Because the grinding endpoint optical detection signal is apparent in view, therefore, this solid abrasive chemical mechanical milling tech grinding endpoint detection method can detect grinding endpoint more accurately, timely, improve stability and the security of technique, and the method can be widely used in the number of chemical grinding technics in semiconductor fabrication, and detection is stable and repeatability is higher.
Better, in the grinder station of the present embodiment, described grinding pad 3 is provided with a polishing pad window 31 along the longitudinal middle part of self, described polishing pad 2 is provided with polishing pad window 21 in a side in self center of circle, described polishing pad window 21 is positioned at the below of described polishing pad window 31, and on described abrasive disk 1, the position of corresponding described polishing pad 2 offers one for the container cavity that holds described generating laser 8 and described signal sensor 9.
Better, in the grinder station of the present embodiment, described polishing pad window 31 and described polishing pad window 21 adopt light transmissive material.
Better, in the grinder station of the present embodiment, described grinding pad driving mechanism comprises that grinding pad drives reel 51 and grinding pad reclaims reel 52, one end of described grinding pad 3 is set around described grinding pad and drives on reel 51, the other end of described grinding pad 3 is set around described grinding pad and reclaims on reel 52, and described grinding pad drives 51 of volumes and described grinding pad reclaims the both sides that reel 52 is arranged at respectively described abrasive disk 1.
What the present embodiment utilized wafer 6 is polished layer and the otherness of lower layer of material reflectivity, change to judge whether to be ground to the different material of lower one deck reflectivity by analyzing catoptrical light intensity, when the layer that is polished of wafer has been ground when exposing the different material of lower floor's reflectivity by local, reflected light signal begins to change, the whole back reflection change in optical signal that have been polished that are polished layer on wafer ease up, and can catch grinding endpoint this moment by the grinding endpoint locator(-ter).Because the grinding endpoint optical detection signal is apparent in view, therefore grinding endpoint detection method, device and grinder station can be widely used in the number of chemical grinding technics in semiconductor fabrication, and it is higher and more timely to survey stability, repeatability and accuracy.See also Fig. 7, shown in Figure 7 is the schematic diagram of the detectable signal for surveying grinding endpoint of the present invention, and in this example, the percentage that reverberation is accounted for the ratio of incident light recently characterizes catoptrical light intensity to be changed, as the detectable signal that is used for surveying grinding endpoint.As seen from Figure 7, the detectable signal of grinding endpoint optics is apparent in view, and therefore, this detection method can be widely used in the number of chemical grinding technics in semiconductor fabrication, and detection is stable and repeatability is higher.So this grinding endpoint detection method can make solid abrasive cmp technology be applicable to the chemical mechanical milling tech of more kinds of different materials.
Embodiment three
See also Fig. 8, and can be in conjunction with Fig. 5 to Fig. 7, the present embodiment provides a kind of grinding endpoint sniffer, be used for the solid abrasive chemical mechanical milling tech and survey being polished layer and whether arriving grinding endpoint of the wafer 6 that is positioned on grinding pad 3, it comprises generating laser 8 and signal detecting device 9, the laser that described generating laser 8 sends is incident to described signal detecting device 9 after the face that the is polished reflection of described wafer 6, be understandable that, the layer that is polished of wafer 6 is positioned at the face that is polished of wafer 6.
Better, solid abrasive chemical mechanical milling tech grinding endpoint sniffer at the present embodiment, described generating laser 8 and described signal detecting device 9 are arranged in an open-topped chamber 10 in abrasive disk 1, are positioned at the polishing pad 2 of described abrasive disk 1 top and grinding pad 3 correspondences and are provided with for described laser and wear polishing pad window 21 and the polishing pad window 31 of penetrating.
Better, at the solid abrasive chemical mechanical milling tech grinding endpoint sniffer of the present embodiment, described polishing pad window 31 and described polishing pad window 21 adopt light transmissive material.
Grinding endpoint detection method provided by the invention, device and grinder station, that utilizes wafer is polished layer and the otherness of lower layer of material reflectivity, change to judge whether to be ground to the different material of lower one deck reflectivity by analyzing catoptrical light intensity, when the layer that is polished of wafer has been ground when exposing the different material of lower floor's reflectivity by local, reflected light signal begins to change, the whole back reflection change in optical signal that have been polished that are polished layer on wafer ease up, and can catch grinding endpoint this moment by the grinding endpoint locator(-ter).Because the grinding endpoint optical detection signal is apparent in view, therefore grinding endpoint detection method, device and grinder station can be widely used in the number of chemical grinding technics in semiconductor fabrication, and it is higher and more timely to survey stability, repeatability and accuracy.So this grinding endpoint detection method, device and grinder station can make solid abrasive cmp technology be applicable to the chemical mechanical milling tech of more kinds of different materials.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of claim of the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.

Claims (9)

1. a grinding endpoint detection method, is characterized in that, comprises the steps:
Step 1, emission one laser is to the layer that is polished of wafer;
Step 2, described wafer reflects described laser;
Step 3 changes to determine whether the arrival grinding endpoint by the catoptrical light intensity signal of analyzing via described wafer reflection.
2. end detection method according to claim 1, it is characterized in that, in described step 3, when the layer that is polished of wafer has been ground when exposing the different material of lower floor's reflectivity by local, described catoptrical light intensity signal begins to change, when the layer that is polished of wafer has all been ground rear described catoptrical light intensity signal and changes when easing up, judge that the layer that is polished of wafer arrives a grinding endpoint.
3. grinding endpoint sniffer, be used for to survey being polished layer and whether arriving grinding endpoint of the wafer that is positioned on grinding pad, it is characterized in that, comprise generating laser and signal detecting device, the laser that described generating laser sends is incident to described signal detecting device after the face that the is polished reflection of described wafer.
4. grinding endpoint sniffer according to claim 3, it is characterized in that, described generating laser and described signal detecting device are arranged in an open-topped chamber in abrasive disk, are positioned at the polishing pad of described abrasive disk top and grinding pad correspondence and are provided with for described laser and wear polishing pad window and the polishing pad window of penetrating.
5. grinding endpoint sniffer according to claim 4, is characterized in that, described polishing pad window and described polishing pad window adopt light transmissive material.
6. grinder station, comprise abrasive disk, polishing pad, grinding pad, the abrasive disk CD-ROM drive motor, be used for driving the grinding pad driving mechanism that grinding pad moves on described polishing pad, and the grinding head that is used for the absorption wafer, described polishing pad is arranged at the top of described abrasive disk, the described abrasive disk of described abrasive disk drive motor rotates, described grinding head is positioned at the top of described grinding pad, it is characterized in that, also comprise generating laser and signal detecting device, the laser that described generating laser sends is incident to described signal detecting device after the face that the is polished reflection of described wafer.
7. grinder station according to claim 6, it is characterized in that, described grinding pad is provided with a polishing pad window along the longitudinal middle part of self, described polishing pad is provided with the polishing pad window in a side in self center of circle, described polishing pad window is positioned at the below of described polishing pad window, and on described abrasive disk, the position of corresponding described polishing pad offers one for the container cavity that holds described generating laser and described signal sensor.
8. grinder station according to claim 7, is characterized in that, described polishing pad window and described polishing pad window adopt light transmissive material.
9. grinder station according to claim 6, it is characterized in that, described grinding pad driving mechanism comprises that grinding pad drives reel and grinding pad reclaims reel, one end of described grinding pad is set around described grinding pad and drives on reel, the other end of described grinding pad is set around described grinding pad and reclaims on reel, and described grinding pad drives reel and described grinding pad reclaims the both sides that reel is arranged at respectively described abrasive disk.
CN2013100625075A 2013-02-27 2013-02-27 Grinding terminal point detecting method and device and grinding machine table Pending CN103084968A (en)

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Cited By (4)

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CN106002603A (en) * 2016-05-30 2016-10-12 上海华力微电子有限公司 Copper grinding method and system
CN106863104A (en) * 2015-10-01 2017-06-20 株式会社荏原制作所 Lapping device
CN114029790A (en) * 2021-11-25 2022-02-11 北京烁科精微电子装备有限公司 Wafer grinding method
CN115008340A (en) * 2022-06-08 2022-09-06 广东喜珍电路科技有限公司 Slicing and grinding method for PCB

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CN115008340B (en) * 2022-06-08 2023-12-15 广东喜珍电路科技有限公司 Slicing and grinding method of PCB

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Application publication date: 20130508