CN103035504A - Chemical machinery polishing method and chemical machinery polishing device - Google Patents
Chemical machinery polishing method and chemical machinery polishing device Download PDFInfo
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- CN103035504A CN103035504A CN201110302495XA CN201110302495A CN103035504A CN 103035504 A CN103035504 A CN 103035504A CN 201110302495X A CN201110302495X A CN 201110302495XA CN 201110302495 A CN201110302495 A CN 201110302495A CN 103035504 A CN103035504 A CN 103035504A
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Abstract
The invention discloses a chemical machinery polishing method and a chemical machinery polishing device. A jetting system is arranged at one side of a polishing platform. Before or after chemical machinery polishing is carried out or during two times of chemical machinery polishing on the polishing platform, the surface of a wafer is sprayed and cleaned by jetting cleaning fluid on the surface of the wafer. According to embodiment of the chemical machinery polishing method and the chemical machinery polishing device, due to the fact that the cleaning liquid is jetted on the wafer, cleaning strength is increased, so that cleaning efficiency of the wafer is obviously improved and residuum on the surface of the wafer is effectively removed.
Description
Technical field
The present invention relates to semiconductor fabrication, particularly cmp method and chemical-mechanical polisher.
Background technology
Chemical Mechanical Polishing Technique is the combination technique of mechanical lapping and chemical corrosion, and the surface that abrasive action and the chemical corrosion by slurry acts on wafer forms bright and clean smooth surface.Chemical Mechanical Polishing Technique has now become one of mainstream technology of semiconductor device being carried out overall leveling.For instance, typical logical device manufacturing process comprises that seven road interlayer dielectric chemical-mechanical polishing process, seven road chemical mechanical polishing of metals operations are with shallow trench isolation ionization mechanical polishing process.
A complete CMP (Chemical Mechanical Polishing) process is mainly finished by operations such as polishing, cleaning and measurements.But, can form the pollutants such as pulp particle, organic substance, metal ion in wafer surface behind the polishing operation, these pollutants can produce fatal impact to semiconductor device.Therefore, the cleaning to semiconductor device becomes very important after chemico-mechanical polishing.The purpose of cleaning is to reduce to acceptable level to the residual particles in the CMP (Chemical Mechanical Polishing) process and pollution.
Figure 1A～1C shows the process of the wafer that is formed with nitride and oxide being carried out chemico-mechanical polishing.
Referring to Figure 1A, be formed with pseudo-grid 12 at substrate 11, deposited successively silicon nitride layer 13 and two-layer silicon oxide layer 14 and 15 on it.
Referring to Figure 1B, at first adopt alkaline slurry to grind silicon oxide layer 14 and 15.Wherein, in order to reduce the butterfly defective of silica, generally adopt the silica on the immobilized particles grinding technics polishing silicon nitride layer 13.
Then, adopt acid slurry to remove silicon nitride layer 13 on the pseudo-grid 12, shown in Fig. 1 C.
Twice chemico-mechanical polishing meeting forms pollutant in wafer surface.These pollutants can produce fatal impact to wafer, must remove to guarantee the reliability of semiconductor device and the cleannes of production line from wafer surface.
Fig. 2 has specifically illustrated the cleaning process after being fixed the particle grinding.As shown in Figure 2, the immobilized particles on polishing pad 22 causes scratch to the surface of wafer 21 in cleaning process, generally by wafer suction nozzle 24 absorption wafers 21, so that the surface of wafer 21 and polishing pad 22 keep certain distance (about 2 centimetres).Then, by the surface transport cleaning fluid 25 of conveying device 23 to polishing pad 22, thereby surface and the polishing pad 22 of wafer 21 carried out soaking and washing (rinse).
US Patent No. 6,287,172 provide a kind of cmp method.The method comprises that the employing tungsten slurry carries out three chemico-mechanical polishings to wafer surface.After polishing is finished for the second time and before for the third time polishing beginning, carry out respectively the soaking and washing of deionized water.
The present inventor conducts in-depth research above cmp method, finds that the method is lower to the cleaning efficiency of wafer surface.This is that the cleaning dynamics is less because wafer and polishing pad keep certain distance, and cleaning fluid just softly contacts with the surface of wafer.
If still leave more residue in wafer surface afterwards and clean, such as the residual particles of slurry and the product of twice slurry etc., these residues may cause following adverse consequences so:
1, residue can increase the defective of wafer surface;
2, when the Acidity of Aikalinity of the used slurry of twice polishing is opposite, the slurry that comprises in the residue of polishing for the first time can with polish used slurry generation chemical reaction and then affect secondary polishing effect for the second time;
3, the particle that remains in wafer surface can cause scratch to wafer surface in follow-up polishing process.
Summary of the invention
The present inventor finds to have the problem lower to the cleaning efficiency of wafer surface in the above-mentioned prior art, and has therefore proposed a kind of new technical scheme for described problem.
An object of the present invention is to provide a kind of cmp method and chemical-mechanical polisher, it can improve the cleaning efficiency to wafer surface.
According to a first aspect of the invention, provide a kind of cmp method, having comprised: by cleaning fluid being injected into the surface of wafer, come the surface of wafer is sprayed cleaning.
Alternatively, after described spray cleans, described wafer is carried out chemico-mechanical polishing.
Alternatively, before described spray cleans, adopt the first slurry that described wafer is carried out chemico-mechanical polishing.
Alternatively, after above-mentioned spray cleans, adopt the second slurry that described wafer is carried out chemico-mechanical polishing.
Alternatively, the Acidity of Aikalinity of described the first slurry and described the second slurry is opposite.
Alternatively, the pH value of described the first slurry is 10～11.
Alternatively, described the first slurry is used for removing oxide.
Alternatively, the pH value of described the second slurry is 4～5.
Alternatively, described the second slurry is used for removing nitride.
Alternatively, described cleaning fluid is deionized water.
Alternatively, the expulsion pressure of described deionized water is 20～100psi.
Alternatively, the injecting time of described deionized water is 1～200 second.
Alternatively, in described spray cleaning process, described wafer is done to rotate in the face around its central shaft, and rotating speed is 10～110rpm.
Alternatively, before described spray cleans, adopt cleaning fluid that soaking and washing is carried out on the surface of described wafer.
According to a second aspect of the invention, provide a kind of chemical-mechanical polisher, comprised injection apparatus, be used for cleaning fluid is injected into the surface of wafer, sprayed cleaning with the surface to described wafer.
Alternatively, described injection apparatus is jet strip.
Alternatively, described jet strip is arranged on the next door of polishing block, cleaning fluid is injected into the surface of wafer before or after chemico-mechanical polishing is carried out on the surface of described wafer.
Alternatively, chemical-mechanical polisher also comprises at least two polishing blocks, and described jet strip is arranged between two polishing blocks.
Alternatively, described two polishing blocks use respectively the opposite slurry of Acidity of Aikalinity.
Alternatively, comprise at least two jet strip, described at least two jet strip intersect each other.
Alternatively, also comprise for the suction nozzle that keeps wafer, the surface that described suction nozzle is set to make wafer and described injection apparatus be 5～15cm apart.
Alternatively, in the process that described spray cleans, described suction nozzle is set to drive wafer and does to rotate in the face around the center wafer axle, and rotating speed is 10～110rpm.
Alternatively, described cleaning fluid is deionized water.
Alternatively, the expulsion pressure of described deionized water is 20～100psi.
Alternatively, the injecting time of described deionized water is 1～200 second.
An advantage of the present invention is to have larger energy owing to being injected into the cleaning fluid of wafer surface, and the mode that adopts spray to clean can wash more residual particles, obviously improves the cleaning efficiency to wafer.This can bring following advantage: the defective that 1, reduces wafer surface; 2, when the Acidity of Aikalinity of the used slurry of twice polishing is opposite, the effect of time polishing after the pulp particle residue impact of avoiding last time polishing; 3, reduce residue and in follow-up polishing process, wafer surface is caused scratch, thus Effective Raise product fine rate.
By referring to the detailed description of accompanying drawing to exemplary embodiment of the present invention, it is clear that further feature of the present invention and advantage thereof will become.
Description of drawings
The accompanying drawing that consists of the part of specification has been described embodiments of the invention, and is used for explaining principle of the present invention together with the description.
With reference to accompanying drawing, according to following detailed description, can more be expressly understood the present invention, wherein:
Figure 1A～1C illustrates the schematic diagram that the wafer that is formed with nitride and oxide is carried out the process of chemico-mechanical polishing.
Fig. 2 illustrates adopting the fixed-abrasive grinding technics to carry out the schematic diagram that wafer after the chemico-mechanical polishing carries out soaking and washing.
Fig. 3 is the flow chart according to the cmp method of one embodiment of the present invention.
Fig. 4 is the flow chart of the cmp method of another execution mode according to the present invention.
Fig. 5 be another execution mode according to the present invention cmp method flow chart.
Fig. 6 is the flow chart of the cmp method of another execution mode according to the present invention.
Fig. 7 is that schematically illustrated spray according to chemical-mechanical polisher of the present invention cleans schematic diagram.
Fig. 8 is the structural representation according to the chemical-mechanical polisher of one embodiment of the present invention.
Fig. 9 is the structural representation of the chemical-mechanical polisher of another execution mode according to the present invention.
Figure 10 is the structural representation of the chemical-mechanical polisher of another execution mode according to the present invention.
Figure 11 is the structural representation of the chemical-mechanical polisher of another execution mode according to the present invention.
Figure 12 is the structural representation of the chemical-mechanical polisher of another execution mode according to the present invention.
Embodiment
Describe various exemplary embodiment of the present invention in detail now with reference to accompanying drawing.It should be noted that: unless specify in addition, the parts of setting forth in these embodiments and positioned opposite, numeral expression formula and the numerical value of step do not limit the scope of the invention.
Simultaneously, should be understood that for convenience of description, the size of the various piece shown in the accompanying drawing is not to draw according to the proportionate relationship of reality.
Below be illustrative to the description only actually of at least one exemplary embodiment, never as any restriction to the present invention and application or use.
May not discuss in detail for the known technology of person of ordinary skill in the relevant, method and apparatus, but in suitable situation, described technology, method and apparatus should be regarded as authorizing the part of specification.
In all examples with discussing shown here, it is exemplary that any occurrence should be construed as merely, rather than as restriction.Therefore, other example of exemplary embodiment can have different values.
It should be noted that: represent similar terms in similar label and the letter accompanying drawing below, therefore, in case be defined in a certain Xiang Zaiyi accompanying drawing, then in accompanying drawing subsequently, do not need it is further discussed.
Cmp method
The invention provides a kind of cmp method, comprising: by cleaning fluid being injected into the surface of wafer, come the surface of described wafer is sprayed cleaning.
Wherein, cleaning fluid can include but not limited to deionized water, for example also can be the mixture of cleaning agent and deionized water.
The expulsion pressure of cleaning fluid (for example deionized water) can be 20～100psi, and injecting time can be 1～200 second.
In the process that spray cleans, wafer keeps rotation in the face around its central shaft, and rotating speed can be 10～110rpm.
Certainly, it will be understood by those of skill in the art that also and can change according to actual needs expulsion pressure, injecting time and wafer rotation.
In the above-described embodiments, be the surface that cleaning fluid is injected into wafer to the cleaning of wafer surface, cleaning fluid is to the great efforts of washing away of wafer surface, and cleaning efficiency greatly improves.
The cleaning fluid that is injected into wafer surface has larger energy, can wash more residual particles.This can bring following advantage: the defective that 1, reduces wafer surface; 2, when the Acidity of Aikalinity of the used slurry of twice polishing is opposite, time polishing effect after the pulp particle impact of avoiding last time polishing; 3, minimizing residual particles in follow-up polishing process causes scratch to wafer surface.Thereby, Effective Raise product fine rate.
As one embodiment of the present of invention, before implementing the spray cleaning, can also adopt cleaning fluid that soaking and washing is carried out on the surface of wafer.In this embodiment, at first adopt conventional method on polishing block, wafer and polishing pad to be carried out soaking and washing, can remove most of residue like this; Then on the next door of polishing block wafer is sprayed cleaning, utilize jet cleaning liquid to remove the remaining a small amount of residue of wafer surface, can satisfy the requirement higher to the cleaning chip surface standard.
Below with reference to accompanying drawing 3-6, several execution modes of cmp method of the present invention are described.The spray of hereinafter mentioning cleans all and can clean identical with spray mentioned above.And it will be appreciated by those skilled in the art that, the spray of hereinafter mentioning cleans and all can be combined with soaking and washing as mentioned above.
Execution mode 1
Fig. 3 is the flow chart that carries out the method for chemico-mechanical polishing according to embodiment of the present invention 1.As shown in Figure 3, the cmp method according to embodiment of the present invention 1 comprises:
S301 is injected into cleaning fluid on the surface of wafer, comes wafer surface is sprayed cleaning.
S302 carries out chemico-mechanical polishing to wafer.
Cmp method according to embodiment of the present invention 1, carrying out spraying cleaning before the chemico-mechanical polishing, can effectively remove the pollutant that wafer brings in various operations before, avoid pollutant is introduced CMP (Chemical Mechanical Polishing) process, and reduce pollutant wafer surface is caused scratch etc.
Execution mode 2
Fig. 4 is for carrying out the flow chart of the method for chemico-mechanical polishing according to embodiment of the present invention 2.As shown in Figure 4, the cmp method according to embodiment of the present invention 2 comprises:
S401 carries out chemico-mechanical polishing to wafer.
S402 is injected into cleaning fluid on the surface of wafer, comes the surface of wafer is sprayed cleaning.
According to the cmp method of embodiment of the present invention 2, after carrying out chemico-mechanical polishing, spray cleaning, can effectively remove the residue that remains in after the CMP (Chemical Mechanical Polishing) process on the wafer, avoid residue that subsequent technique is exerted an influence.
Execution mode 3
Fig. 5 is for carrying out the flow chart of the method for chemico-mechanical polishing according to embodiment of the present invention 3.As shown in Figure 5, the cmp method according to embodiment of the present invention 3 comprises:
S501 carries out the chemico-mechanical polishing first time to wafer.
S502 is injected into cleaning fluid on the surface of wafer, comes the surface of wafer is sprayed cleaning.
S503 carries out the chemico-mechanical polishing second time to wafer.
The chemical property of the slurry that the used slurry of for the second time chemico-mechanical polishing and for the first time chemico-mechanical polishing are used, Acidity of Aikalinity for example can be identical.At this moment, for example, for the first time chemico-mechanical polishing and for the second time chemico-mechanical polishing can be used for removing the same material that deposits on the wafer.Carry out for the first time rough polishing, carry out meticulousr polishing for the second time.
The chemical property of the slurry that the used slurry of for the second time chemico-mechanical polishing and the chemico-mechanical polishing first time are used also can be opposite, and for example Acidity of Aikalinity is opposite.At this moment, for example for the first time chemico-mechanical polishing can be used for removing the different materials that successively deposits on the wafer with the chemico-mechanical polishing second time, for example, and the nitride and the oxide that deposit successively on the pseudo-grid structure.
Cmp method according to embodiment of the present invention 3, between twice chemico-mechanical polishing, spray cleaning, can effectively remove the residue that remains in after the CMP (Chemical Mechanical Polishing) process last time on the wafer, not only can avoid residue in the chemico-mechanical polishing second time, wafer surface to be caused cut, and in the incompatible situation of the employed slurry chemical of twice chemico-mechanical polishing, can avoid slurry generation chemical reaction in the slurry that comprises in this residue and for the second time chemico-mechanical polishing and then the polishing effect of for the second time chemico-mechanical polishing of impact.
Execution mode 4
Fig. 6 is for carrying out the flow chart of the method for chemico-mechanical polishing according to embodiment of the present invention 4.Below with reference to Fig. 6, describe the cmp method according to embodiment of the present invention 4 in detail.
S601 carries out the spray cleaning first time to wafer in advance.
For the wafer that is about to carry out chemico-mechanical polishing, by with cleaning fluid, deionized water for example is injected into the surface of wafer, comes wafer surface is sprayed cleaning.Clean by spray, can effectively remove the pollutant that wafer brings in various operations before, avoid in CMP (Chemical Mechanical Polishing) process, introducing pollutant, reduce pollutant wafer surface is caused scratch.
S602 adopts the first slurry wafer to be carried out the roughing of chemico-mechanical polishing.
For example, in order to remove the silicon oxide layer on the nitride layer, at first adopt the first slurry wafer to be carried out the roughing of chemico-mechanical polishing.The first slurry that adopts in this step can be traditional alkaline slurry, and pH value for example can be 10～11.
S603 carries out the spray cleaning second time to wafer.
By with cleaning fluid, for example deionized water is injected into wafer surface, can remove the residue of the first slurry that contains alkalescence on the wafer surface.
S604 adopts fixed-abrasive wafer to be carried out the fining-off of chemico-mechanical polishing.
Remove in the process of silicon oxide layer, for fear of forming the butterfly defective, after the roughing of step S602, further adopt the fixed-abrasive that is located on the polishing pad that wafer is carried out chemico-mechanical polishing, so that more even to the polishing of wafer.In this step, employed slurry still can be alkaline slurry, and pH value for example can be 10～11, and this slurry can be identical with aforementioned the first slurry.
S605 sprays cleaning for the third time to wafer.
By with cleaning fluid, for example deionized water is injected into wafer surface, can remove the residue of wafer surface.Not only can avoid like this residue further in the CMP (Chemical Mechanical Polishing) process wafer surface being caused cut, and can avoid the slurry generation chemical reaction that adopts in the slurry that comprises in the residue and the subsequent chemical-mechanical polishing technique and then the effect of the impact chemico-mechanical polishing second time.
S606 adopts the second slurry that wafer is carried out chemico-mechanical polishing.
In this step, for removing the silicon nitride that for example is deposited on the pseudo-grid, the second slurry can be traditional acid slurry, and its pH value can be 4～5.
S607 carries out the 4th spray to wafer and cleans.
By with cleaning fluid, for example deionized water is injected into wafer surface, can effectively remove the residue that remains in after the CMP (Chemical Mechanical Polishing) process on the wafer, avoids residue that subsequent technique is exerted an influence.
In this embodiment, carried out altogether three chemico-mechanical polishings, and before each polishing and carried out afterwards amounting to four sprays and cleaned.
It will be understood by those skilled in the art that can be as required, and the one or many spray that save wherein cleans, and also wherein the one or many spray cleans and replaces with soaking and washing, also can carry out soaking and washing before or after the spray cleaning.
Chemical-mechanical polisher
Correspondingly, the invention provides a kind of chemical-mechanical polisher, comprising: injection apparatus, the surface for cleaning fluid being injected into wafer sprays cleaning with the surface to described wafer.
The spray that Fig. 7 schematically shows according to chemical-mechanical polisher of the present invention cleans schematic diagram.
As shown in Figure 7, chemical machinery equipment according to the present invention has injection apparatus 76 and wafer suction nozzle 74.Injection apparatus 76 is provided with several jets 78.
Wherein, cleaning fluid is injected into the surface of wafer 71 by the jet 78 on the injection apparatus 76, thereby the surface of wafer 71 is sprayed cleaning, to remove the residue 72 of wafer surface.
In the spray cleaning process, the surface that wafer suction nozzle 74 can be configured such that wafer 71 and injection apparatus be at a distance of 5～15cm, and wafer suction nozzle 74 can be configured such that wafer 71 centers on central shaft with the speed of 10～110rpm and carries out rotating in the face.
Used cleaning fluid can be deionized water, and the expulsion pressure of deionized water can be 20～100psi, and the injecting time of deionized water can be 1～200 second.Certainly, it will be understood by those of skill in the art that also to change according to actual needs expulsion pressure, injecting time and rotating speed, perhaps select the cleaning fluid of other kinds, to reach better cleaning performance.
In the chemical-mechanical polisher according to embodiment of the present invention 5, by cleaning fluid being injected into the surface of wafer to the cleaning of wafer surface, cleaning fluid is to the great efforts of washing away of wafer surface, and cleaning efficiency greatly improves.
The cleaning fluid that is injected into wafer surface has larger energy, can wash more residual particles.This can bring following advantage: the defective that 1, reduces wafer surface; 2, when the Acidity of Aikalinity of the used slurry of twice polishing is opposite, time polishing effect after the pulp particle impact of avoiding last time polishing; 3, minimizing residual particles in follow-up polishing process causes scratch to wafer surface.Thereby, Effective Raise product fine rate.
Injection apparatus can provide with the form of jet strip, also can provide with any other suitable form.
As example, can jet strip be set as injection apparatus on the polishing block next door.
Below with reference to accompanying drawing 8-12, take jet strip as example, several set-up modes of injection apparatus on chemical-mechanical polisher are described.
Hereinafter, be described as an example of the technological process that on three polishing blocks, wafer amounted to three chemico-mechanical polishings example.It will be appreciated by those skilled in the art that, the polishing block quantity that chemical-mechanical polisher according to the present invention has is not limited to three.
When the chemico-mechanical polishing of carrying out on some polishing blocks is had relatively high expectations to the cleannes that are sent to wafer itself surface on this polishing block, can injection apparatus be set the position before wafer being sent on this polishing block.
When after some polishing blocks carry out chemico-mechanical polishing, needing more high efficiency cleaning, can injection apparatus be set in the position that wafer is transmitted after leaving this polishing block.
Also can between two polishing blocks, injection apparatus be set, to eliminate front stock removal polishing residue afterwards to the impact of rear stock removal polishing.
In addition, on each polishing block, before or after carrying out chemico-mechanical polishing, can also carry out soaking and washing.
Execution mode 5
Fig. 8 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 5.As shown in Figure 8, the chemical-mechanical polisher according to embodiment of the present invention 5 comprises: jet strip 85, articles holding table 84 and three polishing blocks.
Before wafer was carried out chemico-mechanical polishing, jet strip 85 sprayed cleaning to the surface of wafer first.
Suction nozzle can be set to make the surface of wafer and jet strip 85 at a distance of 5～15cm, and injecting time can be 1～200 second, and the expulsion pressure of deionized water can be 20～100psi.In the process that above-mentioned spray cleans, wafer can rotate in its central shaft maintenance face, and rotating speed can be 10～110rpm.After the spray cleaning was finished, wafer can carry out chemico-mechanical polishing at the first polishing block 81, the second polishing block 82 and the 3rd polishing block 83 successively.
Adopt the chemical-mechanical polisher of embodiment of the present invention 5, for the wafer that is about to carry out chemico-mechanical polishing, by cleaning fluid being injected into the surface of wafer, first wafer surface is sprayed cleaning in advance, can effectively remove the pollutant that wafer brings in various operations before, avoid pollutant is introduced CMP (Chemical Mechanical Polishing) process, and reduce pollutant and in polishing process, wafer surface is caused scratch.
Execution mode 6
Fig. 9 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 6.As shown in Figure 9, the chemical machinery equipment according to embodiment of the present invention 6 comprises: jet strip 86, articles holding table 84 and three polishing blocks.
Wherein, jet strip 86 is located between the 3rd polishing block 83 and the articles holding table 84.After the first polishing block 81, the second polishing block 82 and the 3rd polishing block 83 carried out chemico-mechanical polishing, the top that wafer moves to jet strip 86 sprayed cleaning to suction nozzle drive wafer successively.
Adopt the chemical-mechanical polisher of embodiment of the present invention 6, for the wafer through three chemico-mechanical polishings, by cleaning fluid being injected into the surface of wafer, come wafer surface is sprayed cleaning, can effectively remove the residue that remains in after the CMP (Chemical Mechanical Polishing) process on the wafer.
Execution mode 7
Figure 10 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 7.As shown in figure 10, the chemical machinery equipment according to embodiment of the present invention 7 comprises: jet strip 86, articles holding table 84 and three polishing blocks.
Wherein, jet strip 86 is located between the first polishing block 81 and the second polishing block 82, and wafer is finished the top that moves to jet strip 86 after for the first time chemico-mechanical polishing and sprayed cleaning.Then, drive wafer by suction nozzle and carry out chemico-mechanical polishing at the second polishing block 82, the 3rd polishing block 83 successively.In course of injection, suction nozzle can drive wafer and rotate in center wafer axle maintenance face, and rotating speed can be 10～110rpm.Suction nozzle can be configured such that the surface of wafer and jet strip 85 at a distance of 5～15cm, and injecting time can be 1～200 second, and the expulsion pressure of deionized water can be 20～100psi.
Adopt the chemical-mechanical polisher of embodiment of the present invention 7, after the chemico-mechanical polishing first time, spray cleaning, can effectively remove the residue that remains in after for the first time chemico-mechanical polishing on the wafer, can effectively avoid residue in subsequent chemical-mechanical polishing, wafer surface to be caused cut.
Execution mode 8
Figure 11 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 8.As shown in figure 11, the chemical machinery equipment according to embodiment of the present invention 8 comprises: jet strip 85, articles holding table 84 and three polishing blocks.
Wherein, jet strip 85 is located between the second polishing block 82 and the 3rd polishing block 83.After the first polishing block 81, the second polishing block 82 carried out chemico-mechanical polishing, the top that wafer is moved to jet strip 85 sprayed cleaning to suction nozzle drive wafer successively.Afterwards, wafer is moved to the 3rd polishing block 83 and carry out chemico-mechanical polishing.In course of injection, suction nozzle can drive wafer and rotate in center wafer axle maintenance face, and rotating speed can be 10～110rpm.Suction nozzle can be configured such that the surface of wafer and jet strip 85 at a distance of 5～15cm, and injecting time can be 1～200 second, and the expulsion pressure of deionized water can be 20～100psi.
When the nitride that deposits successively on to pseudo-grid and oxide carried out chemico-mechanical polishing, often the first polishing block 81 and the second polishing block 82 were used for oxide is polished, and the 3rd polishing block 83 is used for nitride is polished.
Can adopt the opposite slurry of chemical property to the polishing process of oxide with to the polishing process of nitride.For example to can adopting the slurry of alkalescence in the polishing process of oxide, and to adopting acid slurry in the polishing process of nitride.
Adopt the chemical-mechanical polisher of embodiment of the present invention 8, after the chemico-mechanical polishing second time, spray cleaning, can effectively remove the residue that remains in after for the second time chemico-mechanical polishing on the wafer, this not only can be avoided residue in subsequent chemical-mechanical polishing wafer surface to be caused cut, and avoids the slurry generation chemical reaction that adopts in the slurry that comprises in this residue and the subsequent chemical-mechanical polishing and then the effect of for the second time chemico-mechanical polishing of impact.
Execution mode 9
Figure 12 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 9.As shown in figure 12, the chemical machinery equipment according to embodiment of the present invention 9 comprises: the first jet strip 95, the second jet strip 96, articles holding table 84 and three polishing blocks.
Wherein, the first jet strip 95 is perpendicular to one another crossing with the second jet strip 96, and articles holding table 84 and three polishing blocks are separated.Wafer moves to the first polishing block 81, the second polishing block 82, the 3rd polishing block 83 successively by suction nozzle absorption to carry out chemico-mechanical polishing, and stands spray and clean above two jet strip.Detailed process is as follows.
Suction nozzle drives the wafer that is positioned on the articles holding table 84, take for example through the normal of the intersection point of the first jet strip 95 and the second jet strip 96 as axle, be rotated counterclockwise 45 °, arrive between articles holding table 84 and the first polishing block 81 and be positioned at the top of the first jet strip 95, the first jet strip 95 is with cleaning fluid, for example deionized water is injected into wafer surface, thereby wafer surface is cleaned.Clean by spray, can effectively remove the pollutant that wafer brings in various operations before, avoid in CMP (Chemical Mechanical Polishing) process, introducing pollutant, reduce pollutant wafer surface is caused scratch.
After spray cleaned and finishes for the first time, suction nozzle drove wafer and continues to be rotated counterclockwise 45 °, arrives the first polishing block 81.Wafer carries out the roughing of chemico-mechanical polishing at the first polishing block 81.In order to remove the oxide on the nitride layer, for example remove the silica on the silicon nitride layer, the first polishing block 81 used slurries are alkaline matter, pH value can be 10～11.
After for the first time chemico-mechanical polishing was finished, suction nozzle drove wafer and continues to be rotated counterclockwise 45 °, arrived between the first polishing block 81 and the second polishing block 82 and was positioned at the top of the second jet strip 96.The second jet strip 96 is to wafer surface jet cleaning liquid, and deionized water for example is in order to spray cleaning to wafer surface.Can effectively remove the residue that wafer surface contains alkaline slurry like this.
After cleaning was finished for the second time, suction nozzle drove wafer and continues to be rotated counterclockwise 45 °, arrives the fining-off that the second polishing block 82 carries out chemico-mechanical polishing.Owing to grinding inhomogeneous formed butterfly defective, the second polishing block 82 adopts the fixed-abrasive grinding technics, is about to abrasive material and is fixed on the polishing pad in medium milling process between ground floor.The second polishing block 82 used slurries still can be alkaline slurry, and pH value for example can be 10～11, and this slurry can be identical with the used slurry of the first polishing block 81.
After for the second time chemico-mechanical polishing was finished, suction nozzle absorption wafer continued to rotate 45 ° counterclockwise, arrived between the second polishing block 82 and the 3rd polishing block 83 and was positioned at the top of the first jet strip 95.The first jet strip 95 is with cleaning fluid, and for example deionized water is injected into wafer surface, to spray cleaning.Not only can avoid like this residue further in the CMP (Chemical Mechanical Polishing) process wafer surface being caused cut, and can avoid the slurry generation chemical reaction that adopts in the slurry that comprises in the residue and the subsequent chemical-mechanical polishing technique and then the effect of the impact chemico-mechanical polishing second time.
After spray cleaned and finishes for the third time, suction nozzle absorption wafer continued to rotate 45 ° counterclockwise, arrives the 3rd polishing block 83 and carries out chemico-mechanical polishing.In order to remove the nitride on the pseudo-grid, silicon nitride for example, the 3rd polishing block 83 used slurries are acid, and its pH value can be 4～5.
After chemico-mechanical polishing was finished for the third time, suction nozzle absorption wafer continued to rotate 45 ° counterclockwise, arrived between the 3rd polishing block 83 and the articles holding table 84 and was positioned at the top of the second jet strip 96.The second jet strip 96 is cleaning fluid just, and for example deionized water is injected into wafer surface.Can effectively remove the residue that remains in after the CMP (Chemical Mechanical Polishing) process on the wafer, avoid residue that subsequent technique is exerted an influence.
In above-mentioned spray cleaning process, the wafer suction nozzle can be configured such that wafer surface and injection apparatus at a distance of 5～15cm, and the drive wafer carries out rotating in the face around central shaft with the speed of 10～110rpm.Used cleaning fluid can be deionized water, and the expulsion pressure of deionized water can be 20～100psi, and the injecting time of deionized water can be 1～200 second.
Need to prove, can adjust according to actual needs injecting time, expulsion pressure.For example, spraying in the cleaning for the first time, can shorten injecting time or omit for the first time spray cleaning; And in spray cleaned for the third time, the proper extension injecting time increased expulsion pressure, thereby the pulp particle that forms in for the second time chemico-mechanical polishing is thoroughly removed.The number of polishing block is not limited to shown in the figure, and one, two or more polishing block also can be set.The position of a plurality of polishing blocks and articles holding table and layout are not limited to the matrix pattern shown in the figure, also can be the layouts such as triangle, hexagon or other shapes.A plurality of jet strip can intersect and be angled or be arranged in parallel.
So far, method and formed semiconductor device according to manufacturing semiconductor device of the present invention have been described in detail.For fear of covering design of the present invention, details more known in the field are not described.Those skilled in the art can understand how to implement technical scheme disclosed herein fully according to top description.
Although by example specific embodiments more of the present invention are had been described in detail, it should be appreciated by those skilled in the art, above example only is in order to describe, rather than in order to limit the scope of the invention.It should be appreciated by those skilled in the art, can in the situation that do not depart from the scope of the present invention and spirit, above embodiment be made amendment.Scope of the present invention is limited by claims.
Claims (25)
1. cmp method comprises:
By cleaning fluid being injected into the surface of wafer, come the surface of wafer is sprayed cleaning.
2. cmp method as claimed in claim 1 also comprises:
After described spray cleans, described wafer is carried out chemico-mechanical polishing.
3. cmp method as claimed in claim 1 also comprises:
Before described spray cleans, adopt the first slurry that described wafer is carried out chemico-mechanical polishing.
4. cmp method as claimed in claim 3 also comprises:
After described spray cleans, adopt the second slurry that described wafer is carried out chemico-mechanical polishing.
5. cmp method as claimed in claim 4, the Acidity of Aikalinity of wherein said the first slurry and described the second slurry is opposite.
6. cmp method as claimed in claim 5, the pH value of wherein said the first slurry is 10～11.
7. cmp method as claimed in claim 6, wherein said the first slurry are used for removing oxide.
8. cmp method as claimed in claim 5, the pH value of wherein said the second slurry is 4～5.
9. cmp method as claimed in claim 8, wherein said the second slurry are used for removing nitride.
10. cmp method as claimed in claim 1, wherein said cleaning fluid is deionized water.
11. cmp method as claimed in claim 10, the expulsion pressure of wherein said deionized water are 20～100psi.
12. cmp method as claimed in claim 10, the injecting time of wherein said deionized water are 1～200 second.
13. cmp method as claimed in claim 10, wherein in described spray cleaning process, described wafer is done to rotate in the face around its central shaft, and rotating speed is 10～110rpm.
14. cmp method as claimed in claim 1 also comprises:
Before described spray cleans, adopt cleaning fluid that soaking and washing is carried out on the surface of described wafer.
15. a chemical-mechanical polisher comprises:
Injection apparatus, the surface for cleaning fluid being injected into wafer sprays cleaning with the surface to described wafer.
16. chemical-mechanical polisher as claimed in claim 15, wherein said injection apparatus is jet strip.
17. chemical-mechanical polisher as claimed in claim 16, wherein said jet strip is arranged on the next door of polishing block, cleaning fluid is injected into the surface of wafer before or after chemico-mechanical polishing is carried out on the surface of described wafer.
18. chemical-mechanical polisher as claimed in claim 16 also comprises at least two polishing blocks, described jet strip is arranged between two polishing blocks.
19. chemical-mechanical polisher as claimed in claim 18, wherein said two polishing blocks use respectively the opposite slurry of Acidity of Aikalinity.
20. chemical-mechanical polisher as claimed in claim 18 comprises at least two jet strip, described at least two jet strip intersect each other.
21. chemical-mechanical polisher as claimed in claim 15 also comprises for the suction nozzle that keeps wafer, the surface that described suction nozzle is set to make wafer and described injection apparatus be 5～15cm apart.
22. chemical-mechanical polisher as claimed in claim 21, in the process that described spray cleans, described suction nozzle is set to drive wafer and does to rotate in the face around the center wafer axle, and rotating speed is 10～110rpm.
23. chemical-mechanical polisher as claimed in claim 15, wherein said cleaning fluid are deionized water.
24. chemical-mechanical polisher as claimed in claim 23, the expulsion pressure of wherein said deionized water are 20～100psi.
25. chemical-mechanical polisher as claimed in claim 23, the injecting time of wherein said deionized water are 1～200 second.
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