CN103022885A - Slat structure based high-power 532nm green laser - Google Patents
Slat structure based high-power 532nm green laser Download PDFInfo
- Publication number
- CN103022885A CN103022885A CN2012105775750A CN201210577575A CN103022885A CN 103022885 A CN103022885 A CN 103022885A CN 2012105775750 A CN2012105775750 A CN 2012105775750A CN 201210577575 A CN201210577575 A CN 201210577575A CN 103022885 A CN103022885 A CN 103022885A
- Authority
- CN
- China
- Prior art keywords
- laser
- crystal
- green
- light
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a slat structure based high-power 532nm green laser device. The slat structure based high-power 532nm green laser device is characterized by comprising a semiconductor laser pumping module, a lens assembly, a slat lamellar laser crystal, a laser resonant cavity used for converting pumping light into base frequency laser, a modulator and a green nonlinear crystal used for frequency conversion of modulation laser, wherein the laser resonant cavity comprises cavity mirrors, and the laser forms an 'M'-shaped light path in the laser device. The slat structure based high-power 532nm green laser has the advantages that first-order heat focusing, stress birefringence and depolarization effect can be alleviated and even eliminated by designing the reasonable 'M'-shaped light path and properly selecting curvature radius of cylindrical mirrors, so that higher light beam quality and higher output power are obtained by the aid of a simple slat laser structure; and with the interior structure of the laser device unchanged, power density of intra-cavity base frequency laser is further increased within the laser crystal damage value range by increasing pumping power of the semiconductor laser pumping module.
Description
Technical field
The present invention relates to a kind of all solid state laser, be specifically related to a kind of high-power 532nm green (light) laser based on battened construction.
Background technology
Laser diode-pumped all solid state laser makes one of its focus that becomes current solid-state laser technical research because having the advantages such as conversion efficiency height, good stability, compact conformation, long service life, and wherein slab laser is in widespread attention because pumping efficiency is high, radiating efficiency is good.Adopt the high power solid state laser of bar-shaped working media when long time running, the radial symmetry gradient of working media makes rod present thermal lensing effect and birefringence effect, and then seriously reduced beam quality, limited output level and the high-repetition-rate running of laser.For the solid state laser of battened construction, can be by " M " font light path reasonable in design, alleviate even eliminate single order hot focus, stress birfringence and fevering sodium effect, thereby obtain the power output of better beam quality and Geng Gao.Just proposed the concept of slab laser design as far back as the W.B.Martin of 20 century 70 U.S. GE companies etc., so that the distribution of slab crystal internal temperature field is tending towards evenly, the thermal effect that has greatly reduced crystal itself is beneficial.But there are the shortcomings such as complex structural designs, absorption length is short, pumping efficiency is low in this scheme, has limited its further development.Mostly existing green (light) laser is to adopt the rod-shaped laser crystal to obtain the output of 1064nm basic frequency laser, then carries out frequency inverted to green laser and exports.Because heat load and pumping light power that the rod-shaped laser crystal can bear are limited, have directly limited the high-power output of green laser.
Summary of the invention
For solving the deficiencies in the prior art, the object of the present invention is to provide a kind of high-power 532nm green (light) laser that obtains the power output of better beam quality and Geng Gao based on battened construction.
In order to realize above-mentioned target, the present invention adopts following technical scheme:
A kind of high-power 532nm green (light) laser based on battened construction, it is characterized in that, comprise: laser crystal, the semiconductor laser pumping module of separation aforementioned laser crystal both sides, be arranged at the set of lenses between aforementioned laser crystal and the semiconductor laser pumping module, the pump light that the aforesaid semiconductor pump laser module is launched converts the laserresonator of the basic frequency laser of high light beam quality to, the modulation device that aforementioned basic frequency laser is modulated, and the green glow nonlinear crystal that aforementioned basic frequency laser is carried out frequency translation; The aforementioned laser crystal is the thin slice of lath shape, and the optical direction of pump light is within thin slice, and " C " axle of laser crystal is placed or the half-twist horizontal positioned straight up; The aforementioned laser resonant cavity is comprised of the chamber mirror, and laser forms " M " font light path in laser.
Aforesaid high-power 532nm green (light) laser based on battened construction, it is characterized in that, the aforementioned cavities mirror comprises: cylindrical mirror, level crossing, concave mirror, aforementioned cylindrical mirror is arranged at a side of laser crystal, level crossing and concave mirror are arranged at the opposite side of laser crystal, and before being arranged at the green glow nonlinear crystal along the optical path direction concave mirror.
Preferably, cylindrical mirror is coated with 1064nm laser high-reflecting film with the end face that is arranged at green glow nonlinear crystal level crossing before, be arranged at green glow nonlinear crystal level crossing afterwards and be coated with 1064nm and 532nm laser high-reflecting film, the end face of concave mirror is coated with to 1064nm laser high-reflecting film, to 532nm laser high transmittance film.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that the aforementioned laser crystal is the Nd:YVO4 crystal, perhaps Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that the centre wavelength of aforesaid semiconductor pump laser module is 808nm or 880nm.
Aforesaid high-power 532nm green (light) laser based on battened construction, it is characterized in that, it is rectangular one dimension directional light that the pump light that the aforesaid semiconductor pump laser module sends is converged to the cross section through set of lenses, the up and down width of aforementioned one dimension directional light is half of laser crystal thickness, and length is less than the length of laser crystal.
Aforesaid high-power 532nm green (light) laser based on battened construction, it is characterized in that, laser crystal in the middle of the simultaneously pumping of the semiconductor laser pumping module of aforementioned separation laser crystal both sides, perhaps any one in two semiconductor laser pumping modules carried out independent pumping to laser crystal.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that aforementioned modulation device is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
Preferably, two of aforementioned modulation device end faces all are coated with the 1064nm anti-reflection film.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that aforementioned green glow nonlinear crystal is I class LBO, perhaps II class LBO, II class KTP, II class BBO, II class CLBO.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that two end faces of aforementioned green glow nonlinear crystal all are coated with 1064nm and the double-colored high transmittance film of 532nm.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that, also comprises: be used for improving the diaphragm of beam quality, aforementioned diaphragm is arranged in the laserresonator.
Usefulness of the present invention is: by " M " font light path reasonable in design, and the radius of curvature of suitably selecting cylindrical mirror, can alleviate even eliminate single order hot focus, stress birfringence and fevering sodium effect, thereby utilize simple slab laser structure to obtain the power output of better beam quality and Geng Gao; And, in the situation that does not change the laser internal structure, in laser crystal destruction value scope, can be by improving the pump power of semiconductor laser pumping module, further increase the power density of basic frequency laser in the chamber, thereby obtain more high-power green laser output.
Description of drawings
Fig. 1 is the structural representation of a specific embodiment that the present invention is based on the high-power 532nm green (light) laser of battened construction;
The implication of Reference numeral among the figure: 1-semiconductor laser pumping module, 2-lens, 3-cylindrical mirror, the 4-laser crystal, 5-cylindrical mirror, 6-lens, 7-semiconductor laser pumping module, 8-level crossing, 9-modulation device, the 10-level crossing, 11-level crossing, 12-level crossing, the 13-diaphragm, 14-level crossing, 15-concave mirror, 16-green glow nonlinear crystal, the 17-level crossing.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done concrete introduction.
With reference to Fig. 1, the high-power 532nm green (light) laser that the present invention is based on battened construction comprises: laser crystal 4, the semiconductor laser pumping module 1,7 of separation laser crystal 4 both sides, be arranged at the lens 2,6 between laser crystal 4 and the semiconductor laser pumping module 1,7, lens 2,6 form set of lenses, the pump light that semiconductor laser pumping module 1,7 is launched converts the laserresonator of the basic frequency laser of high light beam quality to, the modulation device 9 that above-mentioned basic frequency laser is modulated, and the green glow nonlinear crystal 16 that above-mentioned basic frequency laser is carried out frequency translation.Wherein, laser crystal 4 is the thin slice of lath shape, and the optical direction of pump light is within thin slice; Laserresonator is comprised of the chamber mirror, and laser forms " M " font light path in laser.
In the present invention, " C " axle of laser crystal 4 is placed straight up, and it can also half-twist be horizontal positioned, and is corresponding, and green glow nonlinear crystal 16 also half-twist is placed.
As a kind of preferred scheme, lens 2,6 all are coated with the high transmittance film to pump light.
The below introduces laserresonator in detail.
With reference to Fig. 1, this laserresonator is comprised of the chamber mirror, specifically by cylindrical mirror 3,5, level crossing 8,10,11,12,14,17 and concave mirror 15 form. Cylindrical mirror 3,5 is arranged at a side of laser crystal 4, level crossing 8,10,11,12,14,17 and concave mirror 15 be arranged at the opposite side of laser crystal 4, wherein, level crossing 8 vertically arranges, level crossing 11 is horizontally disposed with, level crossing 10,12,14,17 and concave mirror 15 all be obliquely installed, and after optical path direction concave mirror 15 is arranged at level crossing 14, before the green glow nonlinear crystal 16, level crossing 17 is as the green laser speculum.
As a kind of preferred scheme, the end face of concave mirror 15 is coated with to 1064nm laser high-reflecting film, to 532nm laser high transmittance film; Cylindrical mirror 3,5 and level crossing 8,10,11,12,14 all be coated with 1064nm laser high-reflecting film; Level crossing 17 is coated with 1064nm laser and 532nm laser high-reflecting film.
In the present invention, laser crystal 4 is the Nd:YVO4 crystal, and it can also be the basic frequency laser crystal such as Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
As a kind of preferred scheme, two end faces of laser crystal 4 all are coated with pump light and the anti-reflection anti-reflection film of 1064nm laser, in order to increase the pumping Optical Absorption.
More preferably, on the top and bottom of laser crystal 4, also be provided with heat sink (not shown), heat sinkly contact with laser crystal 4, can guarantee effective conduction of heat.
In the present invention, semiconductor laser pumping module 1,7 is semiconductor laser diode, its centre wavelength is 808nm, and maximum power output is 30W, also can select for example semiconductor laser pumping module of 880nm of other centre wavelengths according to the difference of selected laser crystal 4.
Laser crystal 4 in the middle of semiconductor laser pumping module 1, the 7 simultaneously pumpings also can be that in two semiconductor laser pumping modules 1,7 any one carried out independent pumping to laser crystal 4.
It is rectangular one dimension directional light that the pump light that semiconductor laser pumping module 1,7 is sent is converged to the cross section through lens 2,6, as a kind of preferred scheme, the up and down width of above-mentioned one dimension directional light is half of laser crystal 4 thickness, and length is less than the length of laser crystal 4, smaller getting final product.
As a kind of preferred scheme, modulation device 9 is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
More preferably, two of modulation device 9 end faces all are coated with the 1064nm anti-reflection film.
In the present invention, green glow nonlinear crystal 16 is arranged between concave mirror 15 and the level crossing 17.The formed basic frequency laser of modeling effect through laserresonator obtains modulated laser after modulation device 9 modulation, this modulated laser finally obtains the output of 532nm green laser through the frequency inverted effect of green glow nonlinear crystal 16.
As a kind of preferred scheme, green glow nonlinear crystal 16 is I class LBO, II class LBO, II class KTP, II class BBO, II class CLBO.
More preferably, two of green glow nonlinear crystal 16 end faces all are coated with 1064nm, reach the double-colored high transmittance film of 532nm.
As a kind of preferred scheme, green glow nonlinear crystal 16 and laser crystal 4 are all with putting into the heat radiation crystal cup behind the indium foil parcel.
As a kind of preferred scheme, green (light) laser of the present invention also comprises diaphragm 13, and diaphragm 13 is arranged in the laserresonator, in order to further raising beam quality.
With reference to Fig. 1, the operation principle of green (light) laser of the present invention is: semiconductor laser pumping module 1,7 pump lights that send are through lens 2, directly inject the end face of laser crystal 4 after 6 convergences, produce stimulated emission after the laser crystal 4 absorptive pumping light energies, the light of launching at laserresonator (by cylindrical mirror 3,5, level crossing 8,10,11,12,14,17 and concave mirror 15 form) the modeling effect under form the basic frequency laser of high light beam quality, this basic frequency laser is after the modulation of modulation device 9, obtain the modulated laser of high-peak power, this modulated laser finally obtains the output of 532nm green laser through the frequency inverted effect of green glow nonlinear crystal 16.
Green (light) laser of the present invention, in the situation that does not change the laser internal structure, in laser crystal destroying value scope, can also improve the pump power of laser diode, further increase the power density of basic frequency laser in the chamber, thereby obtain more high-power green laser output.
In addition, solid green light laser based on battened construction of the present invention, than the green (light) laser based on bar-shaped working media, by " M " font light path reasonable in design, and the radius of curvature of suitably selecting cylindrical mirror, can alleviate even eliminate single order hot focus, stress birfringence and fevering sodium effect, thereby utilize simple slab laser structure to obtain the power output of better beam quality and Geng Gao.
Need to prove that above-described embodiment does not limit the present invention in any form, all employings are equal to replaces or technical scheme that the mode of equivalent transformation obtains, all drops in protection scope of the present invention.
Claims (10)
1. based on the high-power 532nm green (light) laser of battened construction, it is characterized in that, comprise: laser crystal (4), the live apart semiconductor laser pumping module (1 of above-mentioned laser crystal (4) both sides, 7), be arranged at above-mentioned laser crystal (4) and semiconductor laser pumping module (1,7) set of lenses between, with above-mentioned semiconductor laser pumping module (1,7) pump light of launching converts the laserresonator of the basic frequency laser of high light beam quality to, the modulation device (9) that above-mentioned basic frequency laser is modulated, and the green glow nonlinear crystal (16) that above-mentioned basic frequency laser is carried out frequency translation; Above-mentioned laser crystal (4) is the thin slice of lath shape, and the optical direction of pump light is within thin slice, and " C " axle of laser crystal (4) is placed or the half-twist horizontal positioned straight up; Above-mentioned laserresonator is comprised of chamber mirror (3,5,8,10,11,12,14,15,17), and laser forms " M " font light path in laser.
2. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, above-mentioned chamber mirror comprises: cylindrical mirror (3,5), level crossing (8,10,11,12,14,17), concave mirror (15), above-mentioned cylindrical mirror (3,5) be arranged at a side of laser crystal (4), level crossing (8,10,11,12,14,17) and concave mirror (15) be arranged at the opposite side of laser crystal (4), and be arranged at green glow nonlinear crystal (16) before along optical path direction concave mirror (15), preferably, cylindrical mirror (3,5) and level crossing (8,10,11,12,14) end face is coated with 1064nm laser high-reflecting film, the end face of concave mirror (15) is coated with 1064nm laser high-reflecting film, to 532nm laser high transmittance film, level crossing (17) is coated with 1064nm and 532nm laser high-reflecting film.
3. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, above-mentioned laser crystal (4) is the Nd:YVO4 crystal, perhaps Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
4. the high-power 532nm green (light) laser based on battened construction according to claim 1 is characterized in that, the centre wavelength of above-mentioned semiconductor laser pumping module (1,7) is 808nm or 880nm.
5. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, it is rectangular one dimension directional light that the pump light that above-mentioned semiconductor laser pumping module (1,7) is sent is converged to the cross section through set of lenses, the up and down width of above-mentioned one dimension directional light is half of laser crystal (4) thickness, and length is less than the length of laser crystal (4).
6. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, laser crystal (4) in the middle of the simultaneously pumping of the semiconductor laser pumping module (1,7) of above-mentioned separation laser crystal (4) both sides, perhaps any one in two semiconductor laser pumping modules (1,7) carried out independent pumping to laser crystal (4).
7. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, said modulator part (9) is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type, preferably, two end faces of said modulator part (9) all are coated with the 1064nm anti-reflection film.
8. the high-power 532nm green (light) laser based on battened construction according to claim 1 is characterized in that, above-mentioned green glow nonlinear crystal (16) is I class LBO, perhaps II class LBO, II class KTP, II class BBO, II class CLBO.
9. the high-power 532nm green (light) laser based on battened construction according to claim 8 is characterized in that, two end faces of above-mentioned green glow nonlinear crystal (16) all are coated with 1064nm and the double-colored high transmittance film of 532nm.
10. according to claim 1 to the described high-power 532nm green (light) laser based on battened construction of 9 any one, it is characterized in that, also comprise: be used for improving the diaphragm (13) of beam quality, above-mentioned diaphragm (13) is arranged in the laserresonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105775750A CN103022885A (en) | 2012-12-27 | 2012-12-27 | Slat structure based high-power 532nm green laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105775750A CN103022885A (en) | 2012-12-27 | 2012-12-27 | Slat structure based high-power 532nm green laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103022885A true CN103022885A (en) | 2013-04-03 |
Family
ID=47971158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105775750A Pending CN103022885A (en) | 2012-12-27 | 2012-12-27 | Slat structure based high-power 532nm green laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103022885A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020105997A1 (en) * | 1993-05-28 | 2002-08-08 | Tong Zhang | Multipass geometry and constructions for diode-pumped solid-state lasers and fiber lasers, and for optical amplifier and detector |
| US20030031226A1 (en) * | 2001-05-22 | 2003-02-13 | Byren Robert W. | System and method for pumping a slab laser |
| WO2004045034A1 (en) * | 2002-11-13 | 2004-05-27 | Spectra-Physics, Inc. | Diode-pumped solid-state thin slab laser |
| CN1588715A (en) * | 2004-07-09 | 2005-03-02 | 中国科学院物理研究所 | Frequency multipliver plate strip laser device in folding chamber for compensating astigmatism |
| US20110122896A1 (en) * | 2009-11-23 | 2011-05-26 | Guilin Mao | High-power diode end-pumped solid-state uv laser |
| CN203103753U (en) * | 2012-12-27 | 2013-07-31 | 苏州镭创光电技术有限公司 | Slat-structure-based high-power 532nm green laser |
-
2012
- 2012-12-27 CN CN2012105775750A patent/CN103022885A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020105997A1 (en) * | 1993-05-28 | 2002-08-08 | Tong Zhang | Multipass geometry and constructions for diode-pumped solid-state lasers and fiber lasers, and for optical amplifier and detector |
| US20030031226A1 (en) * | 2001-05-22 | 2003-02-13 | Byren Robert W. | System and method for pumping a slab laser |
| WO2004045034A1 (en) * | 2002-11-13 | 2004-05-27 | Spectra-Physics, Inc. | Diode-pumped solid-state thin slab laser |
| CN1588715A (en) * | 2004-07-09 | 2005-03-02 | 中国科学院物理研究所 | Frequency multipliver plate strip laser device in folding chamber for compensating astigmatism |
| US20110122896A1 (en) * | 2009-11-23 | 2011-05-26 | Guilin Mao | High-power diode end-pumped solid-state uv laser |
| CN203103753U (en) * | 2012-12-27 | 2013-07-31 | 苏州镭创光电技术有限公司 | Slat-structure-based high-power 532nm green laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Guan et al. | 32.1 W/m2 continuous wave solar-pumped laser with a bonding Nd: YAG/YAG rod and a Fresnel lens | |
| CN101179176A (en) | Semiconductor dual-end pumped third harmonic ultraviolet laser | |
| CN101232148A (en) | Design method of semiconductor diode both-end pumping high power UV laser | |
| CN109687266A (en) | A kind of 2.79 microns of erbium lasers of high-peak power | |
| CN101599614A (en) | Double Q-switched composite ceramic Nd:YAG inner cavity frequency-doubling green (light) laser | |
| CN102035126A (en) | All-solid-state laser for laser texturing of metal | |
| CN104051943A (en) | A diode pumped passive mode-locked Nd, Y: caF2all-solid-state femtosecond laser | |
| CN103022870A (en) | Slat structure based high-power 355nm ultraviolet laser device | |
| CN100461555C (en) | Quasi-continuous two-bar series inner cavity frequency multiflier high power green laser of 200 vatts grade | |
| CN101599612B (en) | Pulse titanium-doped sapphire laser with high light-beam quality | |
| CN101267083A (en) | Multiple frequency one-way overlapped output standard continuous green light laser inside full solid multi-cavity combination cavity | |
| CN202977964U (en) | Large-power 1064nm near-infrared laser based on wattle structure | |
| CN103066486B (en) | Large-power 1064 nm near-infrared laser based on wattle structure | |
| CN203103753U (en) | Slat-structure-based high-power 532nm green laser | |
| CN103138145B (en) | A kind of method for designing of laser of high-power high light beam quality | |
| CN203103751U (en) | Slat-structure-based high-power 355nm ultraviolet laser | |
| Yang et al. | A compact passively Q-switched intra-cavity frequency doubled Nd: YAG/Cr 4+: YAG composite crystal green laser | |
| CN103022884B (en) | Disc laser emitting 305nm continuous laser by pumping of Pr:KYF at 482.5nm | |
| CN103346466B (en) | A kind of laser regenerative amplifier | |
| CN103022885A (en) | Slat structure based high-power 532nm green laser | |
| CN203026787U (en) | Ten-watt laser oscillator system | |
| CN104466644A (en) | High-power 885 nm laser diode side pump Nd:YAG laser module | |
| CN101267084B (en) | Multiple frequency one-way overlapped output standard continuous green light laser inside full solid T double-cavity combination cavity | |
| CN203932662U (en) | Kerr lens self mode locking Yb:LYSO laser | |
| CN104009389A (en) | Application of femtosecond mode-locked laser and Nd, Y: srF2material in laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130403 |