CN103021887A - Airtight capping method for cooling-required FC (flip chip) circuits - Google Patents
Airtight capping method for cooling-required FC (flip chip) circuits Download PDFInfo
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- CN103021887A CN103021887A CN2012105911026A CN201210591102A CN103021887A CN 103021887 A CN103021887 A CN 103021887A CN 2012105911026 A CN2012105911026 A CN 2012105911026A CN 201210591102 A CN201210591102 A CN 201210591102A CN 103021887 A CN103021887 A CN 103021887A
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Abstract
The invention provides an airtight capping method for cooling-required FC (flip chip) circuits. The method includes the steps of firstly, welding an FC on a substrate by flip bonding; secondly, coating the back of the FC with heat-conducting glue, positioning a cover plate on a shell welding ring, and allowing the inner surface of the cover plate to fully contact with the heat-conducting glue in an adhered manner; secondly, performing primary seam welding, subjecting upper and lower edges of the cover plate and the shell welding ring to seam welding, and subjecting left and right edges of the cover plate, except for non-welding reserved areas, to seam welding with the shell welding ring; thirdly, solidifying the heat-conducting glue, and exhausting gas in a cavity below the cover plate; fourthly, filling the cavity below the cover plate with nitrogen; and fifthly, subjecting the non-welding reserved areas on the left and right edges of the cover plate to seam welding with the shell welding ring. The method guarantees both airtightness and internal atmosphere to meet the design requirements after the cooling-required FC circuits are capped, and is simple in process and easy to implement.
Description
Technical field
The present invention relates to a kind of method of chip circuit sealing cap, especially a kind of air-tightness sealing cap method that has heat radiation to require the FC circuit.
Background technology
Before the present invention occurred, (FC: the conventional parallel seam welding mode of air-tightness back-off core wire sheet) sealing cap (per two corresponding side seam welderings of square cover plate are once finished) was only applicable to the small-power chip package without the special heat-radiating requirement to the FC circuit.At present, along with the appearance of high-power FC chip, it has had requirement to heat dissipation design, need to allow the back side of chip by the heat-conducting glue cover plate (cover plate can be used as heating panel) that bonds, and heat-conducting glue unavoidably can produce some pernicious gases when solidifying.In the case, as also adopting conventional parallel seam welding mode sealing cap, can't take into account air-tightness and require and the requirement of FC inside circuit atmosphere; And the two has heat radiation to require the FC circuit will guarantee at present, and sealing cap will guarantee later on the air-tightness of FC circuit on the one hand, namely with isolate from outer air, will guarantee that the FC inside circuit reduces the existence of pernicious gas and the existence of steam as far as possible on the one hand in addition.
Summary of the invention
The objective of the invention is to replenish the deficiencies in the prior art, a kind of air-tightness sealing cap method that has heat radiation to require the FC circuit is provided, finish stage by stage the process of whole seam weldering, can in seam weldering process, exhale pernicious gases, guaranteed that air-tightness requires and the requirement of FC inside circuit atmosphere.The technical solution used in the present invention is:
A kind of air-tightness sealing cap method that has heat radiation to require the FC circuit comprises following processing step:
Step 101 at first is welded on FC chip back-off on the substrate;
Step 102 is followed the back side that heat-conducting glue is coated in the FC chip, and cover plate is positioned on the shell welding ring, and cover inner surface fully contacts adhesion with heat-conducting glue;
Step 103, then also not the FC circuit of air-tightness sealing cap put into parallel seam sealing machine, carry out phase I seam weldering, the top of cover plate, following and shell welding ring are stitched weldering; Reserve not on the left side of cover plate and the right that seam weldering trough does not stitch weldering, on the left side of cover plate and the right except seam weldering trough not other parts and shell welding ring stitch weldering;
Step 104 is carried out the curing of heat-conducting glue subsequently in parallel seam sealing machine, the curing temperature of heat-conducting glue is 120～150 ℃, and be 2～4 hours curing time; Then the gas in the cavity under the cover plate is discharged;
Step 105 then is filled with nitrogen the cavity under the cover plate in parallel seam sealing machine, nitrogen gas purity 〉=99.0% is filled with 5 minutes～10 minutes time;
Step 106 is carried out second stage seam weldering at last, with on the left side of cover plate, the right seam weldering trough and shell welding ring stitch weldering, finish the last hermetic seal sealing cap of FC circuit.
Further, in the above-mentioned steps 103, the length of not stitching weldering trough 6 on the left side of cover plate 4, the right is about 1/4 of the right.
Advantage of the present invention: adopt the method that the FC circuit is carried out sealing cap, after can ensuring heat dissipation design and requiring FC circuit sealing cap, air-tightness and internal atmosphere all can meet design requirement.The process of this method is simple, easily realizes.
Description of drawings
Fig. 1 is schematic diagram behind the FC circuit coated with thermally conductive glue.
Fig. 2 is that the FC circuit places schematic diagram behind the cover plate.
Fig. 3 is phase I seam weldering schematic diagram.
Fig. 4 is second stage seam weldering schematic diagram.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
Particularly, such as Fig. 1, Fig. 2, Fig. 3, shown in Figure 4:
Embodiment one: a kind of air-tightness sealing cap method that has heat radiation to require the FC circuit comprises following processing step:
Step 101 at first is Flip Chip back-off core wire sheet with FC chip 1() back-off is welded on the substrate 5;
Step 102 is followed the back side that heat-conducting glue 2 is coated in FC chip 1, and cover plate 4 is positioned on the shell welding ring 3, and cover plate 4 inner surfaces fully contact adhesion with heat-conducting glue 2; The manufacturer of heat-conducting glue 2 is U.S. Tech Bond company, and model is TB3619;
Step 103, then also not the FC circuit of air-tightness sealing cap put into parallel seam sealing machine, carry out phase I seam weldering, the top of cover plate 4, following and shell welding ring 3 are stitched weldering; Reserve not on the left side of cover plate 4 and the right that seam weldering trough 6 does not stitch weldering, on the left side of cover plate 4 and the right except seam weldering trough 6 other parts and shell welding ring 3 are not stitched weldering;
Step 104 is carried out the curing of heat-conducting glue 2 subsequently in parallel seam sealing machine, the curing temperature of heat-conducting glue 2 is 150 ℃, and be 2 hours curing time, then the gas in the cavity under the cover plate 4 is discharged; Exhaling pernicious gases, and steam etc.Stitch weldering trough 6 on the left side of cover plate 4 and the right and can be used for the gas discharge;
Step 105 then is filled with nitrogen the cavity under the cover plate 4 in parallel seam sealing machine, nitrogen gas purity 〉=99.0% is filled with 5 minutes～10 minutes time; To satisfy the atmosphere requirement of FC inside circuit;
Step 106 is carried out second stage seam weldering at last, with on the left side of cover plate 4, the right seam weldering trough 6 stitch weldering with shell welding ring 3, finish the last hermetic seal sealing cap of FC circuit.
Further, in the above-mentioned steps 103, the length of not stitching weldering trough 6 on the left side of cover plate 4, the right is about 1/4 of the right.
Embodiment two: a kind of air-tightness sealing cap method that has heat radiation to require the FC circuit comprises following processing step:
Step 101 at first is Flip Chip back-off core wire sheet with FC chip 1() back-off is welded on the substrate 5;
Step 102 is followed the back side that heat-conducting glue 2 is coated in FC chip 1, and cover plate 4 is positioned on the shell welding ring 3, and cover plate 4 inner surfaces fully contact adhesion with heat-conducting glue 2; The manufacturer of heat-conducting glue 2 is U.S. Tech Bond company, and model is TB3619;
Step 103, then also not the FC circuit of air-tightness sealing cap put into parallel seam sealing machine, carry out phase I seam weldering, the top of cover plate 4, following and shell welding ring 3 are stitched weldering; Reserve not on the left side of cover plate 4 and the right that seam weldering trough 6 does not stitch weldering, on the left side of cover plate 4 and the right except seam weldering trough 6 other parts and shell welding ring 3 are not stitched weldering;
Step 104 is carried out the curing of heat-conducting glue 2 subsequently in parallel seam sealing machine, the curing temperature of heat-conducting glue 2 is 120 ℃, and be 4 hours curing time, then the gas in the cavity under the cover plate 4 is discharged; Exhaling pernicious gases, and steam etc.Stitch weldering trough 6 on the left side of cover plate 4 and the right and can be used for the gas discharge;
Step 105 then is filled with nitrogen the cavity under the cover plate 4 in parallel seam sealing machine, nitrogen gas purity 〉=99.0% is filled with 5 minutes～10 minutes time; To satisfy the atmosphere requirement of FC inside circuit;
Step 106 is carried out second stage seam weldering at last, with on the left side of cover plate 4, the right seam weldering trough 6 stitch weldering with shell welding ring 3, finish the last hermetic seal sealing cap of FC circuit.
Further, in the above-mentioned steps 103, the length of not stitching weldering trough 6 on the left side of cover plate 4, the right is about 1/4 of the right.
Key of the present invention is to finish stage by stage the process of whole seam weldering: phase I seam postwelding, the left side of cover plate 4, the right respectively reserve one section and do not stitch weldering (later stage exhaust usefulness, see Fig. 3), treat that exhaust finishes, be filled with repair welding (the second stage seam weldering of carrying out again remainder behind the nitrogen, finish the air-tightness sealing cap, see Fig. 4).
Because the sealing cap among the present invention has adopted segmentation to carry out, at phase I seam postwelding, carry out the curing of heat-conducting glue 2, subsequently the gas in the cavity under the cover plate 4 is fully discharged; Then nitrogen is filled with the cavity under the cover plate 4, carries out at last the air-tightness seam weldering (final sealing cap) of second stage.Adopt the method sealing cap, can ensure the air-tightness sealing cap that heat dissipation design requires the FC circuit after, internal atmosphere meets design requirement.Satisfied the air-tightness and the internal atmosphere that have heat radiation to require the FC circuit, internal pressure also can be controlled at about 1 atmospheric pressure.
Claims (2)
1. one kind has heat radiation to require the air-tightness sealing cap method of FC circuit, it is characterized in that: may further comprise the steps:
Step 101 at first is welded on FC chip (1) back-off on the substrate (5);
Step 102 is followed the back side that heat-conducting glue (2) is coated in FC chip (1), and cover plate (4) is positioned on the shell welding ring (3), and cover plate (4) inner surface fully contacts adhesion with heat-conducting glue (2);
Step 103, then also not the FC circuit of air-tightness sealing cap put into parallel seam sealing machine, carry out phase I seam weldering, the top of cover plate (4), following and shell welding ring (3) are stitched weldering; Reserve not on the left side of cover plate (4) and the right that seam weldering trough (6) does not stitch weldering, weld the other parts of trough (6) except seam on the left side of cover plate (4) and the right and shell welding ring (3) is not stitched weldering;
Step 104 is carried out the curing of heat-conducting glue (2) subsequently in parallel seam sealing machine, the curing temperature of heat-conducting glue (2) is 120～150 ℃, and be 2～4 hours curing time; Then the gas in the cavity under the cover plate (4) is discharged;
Step 105 then is filled with nitrogen the cavity under the cover plate (4) in parallel seam sealing machine, nitrogen gas purity 〉=99.0% is filled with 5 minutes～10 minutes time;
Step 106 is carried out second stage seam weldering at last, with on the left side of cover plate (4), the right seam weldering trough (6) stitch weldering with shell welding ring (3), finish the last hermetic seal sealing cap of FC circuit.
2. as claimed in claim 1 have heat radiation to require the air-tightness sealing cap method of FC circuit, it is characterized in that: in the above-mentioned steps 103, on the left side of cover plate (4), the right not the length of seam weldering trough (6) be 1/4 of the right.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210591102.6A CN103021887B (en) | 2012-12-31 | 2012-12-31 | Airtight capping method for cooling-required FC (flip chip) circuits |
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| CN201210591102.6A CN103021887B (en) | 2012-12-31 | 2012-12-31 | Airtight capping method for cooling-required FC (flip chip) circuits |
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| CN103021887B CN103021887B (en) | 2015-04-22 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11204552A (en) * | 1998-01-07 | 1999-07-30 | Nec Corp | Semiconductor-device packaging method and semiconductor device |
| US6445062B1 (en) * | 1999-02-19 | 2002-09-03 | Nec Corporation | Semiconductor device having a flip chip cavity with lower stress and method for forming same |
| CN201478293U (en) * | 2009-08-20 | 2010-05-19 | 无锡中微高科电子有限公司 | Airtight Seal Structure for Flip Chip Bonding |
| CN101728340A (en) * | 2008-10-22 | 2010-06-09 | 索尼株式会社 | Semiconductor device and method of manufacturing the same |
| CN102646607A (en) * | 2012-01-15 | 2012-08-22 | 中国电子科技集团公司第十研究所 | Technology method of parallel seam welding of MMW (Millimeter Waves) T/R assembly high conduction material |
-
2012
- 2012-12-31 CN CN201210591102.6A patent/CN103021887B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11204552A (en) * | 1998-01-07 | 1999-07-30 | Nec Corp | Semiconductor-device packaging method and semiconductor device |
| US6445062B1 (en) * | 1999-02-19 | 2002-09-03 | Nec Corporation | Semiconductor device having a flip chip cavity with lower stress and method for forming same |
| CN101728340A (en) * | 2008-10-22 | 2010-06-09 | 索尼株式会社 | Semiconductor device and method of manufacturing the same |
| CN201478293U (en) * | 2009-08-20 | 2010-05-19 | 无锡中微高科电子有限公司 | Airtight Seal Structure for Flip Chip Bonding |
| CN102646607A (en) * | 2012-01-15 | 2012-08-22 | 中国电子科技集团公司第十研究所 | Technology method of parallel seam welding of MMW (Millimeter Waves) T/R assembly high conduction material |
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