CN103021821B - The method for annealing of the semiconductor structure being positioned in flexible substrate - Google Patents
The method for annealing of the semiconductor structure being positioned in flexible substrate Download PDFInfo
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- CN103021821B CN103021821B CN201210491549.6A CN201210491549A CN103021821B CN 103021821 B CN103021821 B CN 103021821B CN 201210491549 A CN201210491549 A CN 201210491549A CN 103021821 B CN103021821 B CN 103021821B
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Abstract
The present invention relates to semiconductor process technique field, disclose the method for annealing of a kind of semiconductor structure being positioned in flexible substrate.In the present invention, by using microwave heating, the metal or the semiconductor structure that are pointed in flexible substrate are annealed, thermal property is added owing to microwave heating has selectivity to material, make when the metal being pointed in flexible substrate or semiconductor structure are annealed, optionally only amorphous silicon layer or metal level are heated, and flexible substrate will not absorb or does not the most absorb microwave energy, therefore flexible substrate will not be heated to the highest temperature when microwave annealing, thus ensure that flexible substrate is not destroyed；And microwave heating can make heated material inside and outside heat, heat up simultaneously simultaneously, homogeneous heating, therefore, the method that the present invention provides can complete the annealing of metal or the semiconductor structure being pointed in flexible substrate at low temperatures, and homogeneous heating, heating energy consumption efficiency is high.
Description
Technical field
The present invention relates to semiconductor process technique field, particularly to the semiconductor junction being positioned in flexible substrate
The method for annealing of structure.
Background technology
Compared with non-crystalline silicon, the carrier mobility of polysilicon increases 2 orders of magnitude, thus extensively applies
Making in TFT (Thin Film Transistor is called for short " TFT ").Polysilicon
Preparation method usually: first preparing amorphous silicon layer on substrate, re-annealing obtains polysilicon.Polycrystalline
The preparation method of silicon can be divided into high temperature preparation and low temperature to prepare according to preparation temperature.Due to when high annealing
Temperature will be more than 1000 degree, it is well known that at these elevated temperatures, glass substrate or plastic can soften
Melted, cannot normally use at all.Thus prepare polysilicon the most at low temperatures and become both domestic and external grinding
Study carefully focus.Compared with traditional high temperature polysilicon, low temperature polycrystalline silicon needs laser irradiation process, but it is adopted
Be excimer laser as thermal source, laser, after transmissive system, can produce energy equally distributed
Laser beam is also projeced on the glass substrate of amorphous silicon structures, when the glass substrate of amorphous silicon structures absorbs
After the energy of excimer laser, polysilicon structure will be transformed into.Owing to whole processing procedure is to take the photograph
Family name's 500-600 degree is accomplished below, and common glass substrate also can bear, and this is greatly lowered and is manufactured into
This.In recent years, prepare polysilicon on flexible substrates and be subject to people's attention, general as flexible substrate
For ultra-thin glass or polymeric material, compared with the device using hard substrate material to prepare, use flexibility
Device prepared by material has lightweight, collapsible and the most breakable advantage.Such as, Chinese patent
200810237489 disclose a kind of method preparing polysilicon membrane, are to utilize silica flour to be prepared as colloidal sol,
Use silk screen printing or spraying process plated film, and by 200～600 degrees Celsius, acquisition in 0.1～3 hour of annealing
Polysilicon membrane.
But, there is also the strongest high temperature resistant shortcoming due to flexible substrate simultaneously, and adopt in annealing process
Temperature the most too high, therefore use traditional method for annealing, it is possible to flexible substrate is caused brokenly
Bad, as produced gas, steam etc., be not suitable for the preparation of the semiconductor structure being positioned in flexible substrate.
And, use traditional method for annealing operating time long, energy consumption is big.
Summary of the invention
It is an object of the invention to provide the method for annealing of a kind of semiconductor structure being positioned in flexible substrate,
Make when the metal being pointed in flexible substrate or semiconductor structure are annealed, optionally only to amorphous
Silicon layer or metal level heating, and flexible substrate carries out heating and will not absorb or the most not absorb microwave energy,
Therefore flexible substrate will not be heated to the highest temperature when microwave annealing, thus ensure that flexible substrate
It is not destroyed.
For solving above-mentioned technical problem, embodiments of the present invention provide a kind of being positioned in flexible substrate
The method for annealing of semiconductor structure, comprises the steps of
One flexible substrate is provided；
Described flexible substrate prepares amorphous silicon layer；
The described flexible substrate being prepared for amorphous silicon layer is placed in the cavity of microwave heating equipment, to institute
Rheme semiconductor structure in flexible substrate carries out heating anneal；The cavity of described microwave heating equipment exists
Multi-modal and multifrequency electromagnetic wave is contained during heating.
Embodiments of the present invention additionally provide the annealing side of a kind of metal structure being positioned in flexible substrate
Method, comprises the steps of
One flexible substrate is provided；
Described flexible substrate prepares metal level；
The described flexible substrate being prepared for metal level is placed in the cavity of microwave heating equipment, to described
The metal structure being positioned in flexible substrate carries out heating anneal；The cavity of described microwave heating equipment is in heating
Multi-modal and the multifrequency electromagnetic wave of Shi Hanyou.
Embodiment of the present invention in terms of existing technologies, uses microwave heating, is pointed to flexibility
Metal or semiconductor structure on substrate are annealed, and add owing to microwave heating has selectivity to material
Thermal property so that when the metal being pointed in flexible substrate or semiconductor structure are annealed, alternative
Amorphous silicon layer or metal level are only heated by ground, and flexible substrate will not absorb or does not the most absorb microwave energy
Amount, therefore flexible substrate will not be heated to the highest temperature when microwave annealing, thus ensure that flexibility
Substrate is not destroyed；Additionally, microwave heating can make heated material inside and outside heat, heat up simultaneously simultaneously,
Homogeneous heating, therefore, embodiment of the present invention can complete the metal being pointed in flexible substrate at low temperatures
Or the annealing of semiconductor structure, and homogeneous heating, heating energy consumption efficiency is high.
It addition, flexible substrate is placed on the chamber of microwave heating equipment in the way of arbitrarily bending or any folding
Internal.Owing to there is selectivity to material-to-be-heated when carrying out microwave heating, therefore when the gross area of substrate
More than in microwave cavity for the area of the supporting surface of placing heated object time, flexible substrate can be with arbitrarily
Bending or the mode arbitrarily folded heat in being placed on the cavity of microwave heating equipment, and microwave cavity is only
Optionally amorphous silicon layer or metal level can be heated, directly heat substantially without to substrate.
The most not only avoid in heating process and flexible substrate is damaged, and the area of this flexible substrate can
To place the supporting surface area of heated object in being not only restricted to microwave cavity, thus possess and be widely applied
Scene.
It addition, before preparing amorphous silicon layer or metal level in described flexible substrate, it is also possible to described
Dielectric layer is prepared in flexible substrate；Correspondingly, described flexible substrate is prepared amorphous silicon layer or metal
In the step of layer, on described dielectric layer, prepare described amorphous silicon layer or metal level.By in flexibility
Prepare dielectric layer on substrate, cushioning effect can be played, make preparation amorphous silicon layer on dielectric layer or
Heat, when carrying out microwave heating, is not conducted to the flexible liner being positioned under dielectric layer by person's metal level as far as possible
The end.
It addition, the material of described dielectric layer can be silicon dioxide.Heat due to the material that dielectric layer is selected
Conductance is the lowest more good, and preparation amorphous silicon layer on dielectric layer or metal level can be made to carry out microwave
During heating, heat is not conducted to the flexible substrate being positioned under dielectric layer as far as possible, therefore can be selected for dioxy
The relatively low material of the heat conductivitys such as SiClx (thermal conductivity) is as dielectric layer material.
Accompanying drawing explanation
Fig. 1 is the annealing of the semiconductor structure being positioned in flexible substrate according to first embodiment of the invention
The flow chart of method；
Fig. 2 is the microwave heating equipment of De Shitong science and technology (DSG technologies)
The structural representation of Axom150/Axom300；
Fig. 3 is the annealing side of the metal structure being positioned in flexible substrate according to second embodiment of the invention
The flow chart of method；
Fig. 4 is the annealing side of the metal structure being positioned in flexible substrate according to third embodiment of the invention
The flow chart of method.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to this
Bright each embodiment is explained in detail.But, it will be understood by those skilled in the art that
In each embodiment of the present invention, propose many technology to make reader be more fully understood that the application thin
Joint.But, even if there is no these ins and outs and many variations based on following embodiment and amendment,
The application each claim technical scheme required for protection can also be realized.
First embodiment of the present invention relates to the annealing of a kind of semiconductor structure being positioned in flexible substrate
Method, idiographic flow is as shown in Figure 1.
Step S101 a, it is provided that flexible substrate.Specifically, this flexible substrate can relatively low by cost and
The material that the upper limit uses temperature relatively low is formed, and such as, selects ultra-thin glass or organic polymer material to make
For this flexible substrate, wherein organic polymer material includes but not limited to: polyolefin, polyester, poly-naphthalene two
Formic acid glycol ester, polyimides (polyimide) and fluoropolymer.The upper limit of substrate uses temperature
May approximately equal to or less than temperature when amorphous silicon layer is annealed.
Step S102, prepares amorphous silicon layer on flexible substrates.
Owing to the resistance to elevated temperatures of flexible substrate is not strong, can use at low temperature the most in the present embodiment
The lower method of amorphous silicon layer of preparing on flexible substrates to prepare amorphous silicon layer, such as, plasma
Strengthen chemical gaseous phase deposition (PECVD) method, physical vapour deposition (PVD) (PVD) method or ald (ALD)
Method etc..
Step S103, is placed on the cavity of microwave heating equipment by the flexible substrate being prepared for amorphous silicon layer
In, the semiconductor structure being pointed in flexible substrate carries out heating anneal, obtains polysilicon layer.
When the semiconductor structure using the mode of microwave heating to be pointed in flexible substrate is annealed, microwave
Frequency between 1.5GHz to 20GHz, during heating a length of 1 to 30 minute.And, microwave adds
The cavity of hot equipment contains multi-modal and multifrequency electromagnetic wave when heating.
Specifically, the semiconductor structure being intended to carry out annealing puts into the microwave cavity of microwave annealing equipment,
According to the characteristic of the heated semiconductor structure being positioned in flexible substrate, control the gas in microwave cavity
Pressure, atmosphere kind and density, microwave frequency, microwave mode etc., carry out microwave annealing.Such as Fig. 2 institute
Show be De Shitong science and technology (DSG technologies) microwave heating equipment Axom150/Axom300
Structural representation, when needs are annealed, the semiconductor structure being intended to carry out annealing puts into microwave annealing equipment
Microwave cavity in, inputted by the human-computer interaction interface of this equipment after controlling parameter, open equipment i.e.
Microwave annealing can be completed, simple to operate.Additionally, what deserves to be explained is, this microwave heating equipment
Axom150/Axom300 is when carrying out microwave heating, and microwave electromagnetic waves is divided in Gauss near 5.8GHz
Cloth, can carry out multi-frequency heating with the interval of 30Hz-50Hz, and inside cavity, these are different simultaneously
The microwave of frequency has the feature of multi-modal (multi-mode) simultaneously, so can ensure that microwave energy
In uniformity and the concordance of inside cavity distribution, further result in uniformity during silicon and
Cause property.
Additionally, due to microwave presents following phenomenon when heating some material: starting several seconds to somewhat
In the range of clock, temperature rises very slow, but after temperature rises to certain value, the when of continuing heating,
Temperature can steeply rise, and hence it is also possible to after carrying out microwave heating a period of time under certain frequency,
Do not heat within ensuing certain time, carry out microwave heating the most again, heated by interruption, make by
Heating material does not haves the phenomenon that temperature steeply rises.
Microwave is a kind of electromagnetic wave, and microwave heating is to enter object by the way of object absorbs microwave energy
Row heats, and other heating/heat treatment mode has obvious difference.Common mode of heating is usually root
Making heat reach material heat from outside according to conduction of heat, convection current and radiation theory, heat is the most from outward appearance to inner essence
Transmission carries out heated material, is inevitably present thermograde, therefore the material of heating is uneven in material,
Cause material that hot-spot occurs, affect heating technique.Microwave heating is different from traditional heating mode, it
It is to be moved by heated object internal dipole molecule high-frequency reciprocating, produces " internal friction heat " and make heating object
Material temperature degree raises, and is not necessary to any heat transfer process, material inside and outside portion just can be made to heat simultaneously, heat up simultaneously,
Homogeneous heating, it is only necessary to one of the part of the energy consumption of traditional heating mode or tens parts just can reach heating
Purpose.From theory analysis, amount of heat that material produces at the energy absorbed in microwave field and material kind
Class and, the parameter such as dielectric property, polarization intensity have much relations, i.e. microwave has selectivity to material
Add thermal property.Therefore, in the present embodiment, on the one hand when carrying out microwave heating, alternative
Amorphous silicon layer is only heated by ground, and flexible substrate will not absorb or does not the most absorb microwave energy, therefore flexible
Substrate will not be heated to the highest temperature when microwave annealing, thus ensure that flexible substrate is not destroyed；
On the other hand, microwave heating is the mode of heating of a kind of overall heating material, and system of being heated can be made internal all
It is heated evenly, there is the features such as quick, simple, uniform, efficient, energy-conservation, pollution-free, therefore make
The method for annealing that present embodiment provides has homogeneous heating, the feature that heating energy consumption efficiency is high.
Second embodiment of the present invention relates to the annealing of a kind of semiconductor structure being positioned in flexible substrate
Method.Second embodiment has been further improvement, its improvements master on the basis of the first embodiment
It is: in second embodiment of the invention, before preparing amorphous silicon layer on flexible substrates, also may be used
To prepare dielectric layer on flexible substrates；Correspondingly, prepare in the step of amorphous silicon layer on flexible substrates,
Amorphous silicon layer is prepared, as shown in Figure 3 on dielectric layer.
Specifically, first a flexible substrate is provided, i.e. performs step S301.Flexible substrate herein with
The flexible substrate used in first embodiment of the invention is the same, does not repeats them here.
Then, perform step S302 and S303, be sequentially prepared dielectric layer and non-crystalline silicon on flexible substrates
Layer.Specifically, in step s 302, dielectric layer is prepared on flexible substrates；Dielectric layer can herein
To use ald ALD, physical vapour deposition (PVD) PVD method, chemical gaseous phase deposition CVD
Prepare etc. method.
In step S303, dielectric layer is prepared amorphous silicon layer, prepare amorphous silicon layer and this herein
Bright first embodiment step S102 is similar to, and does not repeats them here.
After preparing amorphous silicon layer, the flexible substrate being prepared for dielectric layer and amorphous silicon layer is placed
In the cavity of microwave heating equipment, the semiconductor structure being pointed in flexible substrate carries out heating anneal,
Obtain polysilicon layer, i.e. perform step S304, as step S103 of first embodiment of the invention,
Do not repeat them here.
By preparing dielectric layer on flexible substrates, cushioning effect can be played, make preparation dielectric layer it
On amorphous silicon layer when carrying out microwave heating, be not conducted to be positioned under dielectric layer by heat is soft as far as possible
Property substrate.Therefore, the thermal conductivity of the material that dielectric layer is selected is the lowest more good, and preparation can be made at dielectric layer
On amorphous silicon layer when carrying out microwave heating, as far as possible be not conducted to be positioned under dielectric layer by heat
Flexible substrate, in actual applications, can be selected for the material that the heat conductivitys such as silicon dioxide (thermal conductivity) are relatively low
Material is as dielectric layer material.
Third embodiment of the invention relates to the method for annealing of a kind of metal structure being positioned in flexible substrate,
As shown in Figure 4, specifically comprise the following steps that
Step S401 a, it is provided that flexible substrate；In flexible substrate herein and first embodiment of the invention
The flexible substrate used is the same, does not repeats them here.
Step S402, prepares metal level on flexible substrates；
Owing to the resistance to elevated temperatures of flexible substrate is not strong, the most in the present embodiment, physics can be used
Vapour deposition (PVD) method or silver slurry or metallic particles are mixed in solvent, by inkjet printing or
The methods of spin coating etc. prepare metal level at low temperatures, and the metal used can be silver Ag, aluminum Al, gold
The common metal such as Au, platinum Pt.
Step S403, is placed on the flexible substrate being prepared for metal level in the cavity of microwave heating equipment,
The metal structure being pointed in flexible substrate carries out heating anneal.
When the metal structure using the mode of microwave heating to be pointed in flexible substrate is annealed, microwave
Frequency, between 1.5GHZ to 20GHZ, heats duration 1 to 30 minute.And, microwave heating
The cavity of equipment contains multi-modal and multifrequency electromagnetic wave when heating.According to the feature of microwave heating,
Metal level, when carrying out microwave heating, is optionally only heated, and flexible substrate is or not present embodiment
Can absorb or the most not absorb microwave energy, therefore flexible substrate will not be heated to very when microwave annealing
High temperature, thus ensure that flexible substrate is not destroyed, and, also there is homogeneous heating, add heat energy
The feature that consumption efficiency is high.
Additionally, what deserves to be explained is, microwave electromagnetic waves is because frequency height wavelength is short, and high conductive material (compares
Such as metal) when being placed in microwave field, the degree of depth that microwave penetrates metal inside is the most shallow, say, that gold
Belong to material skin depth in microwave electromagnetic field smaller.Such as, under 5.8GHz frequency,
The skin depth of copper is 0.85 μm, and the skin depth of aluminum is 1.08 μm, and the skin depth of nickel is 1.95 μm,
The skin depth of gold is 1.03 μm, and the skin depth of silver is 0.83 μm, and the skin depth of platinum is 2.15 μm.
When microwave electromagnetic field acts on metal material, owing to metal material surface is irregular or microwave field is uneven
Etc. reason, and easily cause the high electric field of local, produce electric spark, possibly even cause the molten of metal surface
Melt so that heating technique is out of control, so using microwave heating that the metal structure in flexible substrate is entered
During row annealing, need to use multi-frequency, multi-modal microwave, prevent the generation of high local fields.Therefore,
As long as the metal structure that will be located in flexible substrate to be placed directly within multi-frequency, multi-modal and microwave field distribution
(such as, the microwave heating of De Shitong science and technology (DSG technologies) sets uniform microwave heating equipment
Standby Axom150/Axom300) cavity in, the microwave heating treatment to metal structure can be realized.
Four embodiment of the invention relates to the method for annealing of a kind of metal structure being positioned in flexible substrate.
4th embodiment has done further improvement on the basis of the 3rd embodiment, and its improvements essentially consist in:
In four embodiment of the invention, before preparing metal level on flexible substrates, it is also possible in flexible liner
Dielectric layer is prepared at the end；Correspondingly, prepare in the step of metal level on flexible substrates, dielectric layer it
On prepare metal level.
Similar with second embodiment of the invention, by preparing dielectric layer on flexible substrates, can play
Cushioning effect, makes preparation metal level on dielectric layer when carrying out microwave heating, tries one's best not by heat
It is conducted to the flexible substrate being positioned under dielectric layer.Therefore, the thermal conductivity of the material that dielectric layer is selected is the lowest
The best, preparation metal level on dielectric layer can be made when carrying out microwave heating, try one's best not by heat
It is conducted to the flexible substrate being positioned under dielectric layer, in actual applications, can be selected for the heat conduction such as silicon dioxide
The relatively low material of coefficient (thermal conductivity) is as dielectric layer material.
Fifth embodiment of the invention relates to a kind of semiconductor structure being positioned in flexible substrate or metal knot
The method for annealing of structure.5th embodiment is the first embodiment, the second embodiment, the 3rd embodiment party
Having done further improvement on the basis of formula or the 4th embodiment, its improvements essentially consist in: in the present invention
In 5th embodiment, the flexible substrate being placed in the cavity of microwave heating equipment can be arbitrarily bending
Or arbitrarily fold.It is to say, added for placement when the gross area of substrate is interior more than microwave cavity
During the area of the supporting surface of warmware, owing to substrate is flexible substrate, can bend, it is possible to will be added
The flexible substrate of heat and semiconductor structure thereon or metal structure are in the way of arbitrarily bending or arbitrarily folding
Heat in being placed on the cavity of microwave heating equipment.Additionally, due to microwave heating is to material-to-be-heated
Having selectivity, even if so bending or folding, microwave cavity also only can be optionally to amorphous
Silicon layer or metal level heat, and will not heat substrate.The most not only avoid in heating process
Flexible substrate is damaged, and the area of this flexible substrate is placed in can being not only restricted to microwave cavity
The supporting surface area of heated object, thus possessed and be widely applied scene.
The step of the most various methods divides, and is intended merely to describe clear, it is achieved time can merge into one
Step or split some step, is decomposed into multiple step, as long as comprising identical logical relation,
All in the protection domain of this patent；To adding inessential amendment in algorithm or in flow process or drawing
Enter inessential design, but do not change the core design of its algorithm and flow process all at the protection model of this patent
In enclosing.
It will be understood by those skilled in the art that the respective embodiments described above are realize the present invention concrete
Embodiment, and in actual applications, can to it, various changes can be made in the form and details, and the most inclined
From the spirit and scope of the present invention.
Claims (9)
1. the method for annealing of the semiconductor structure being positioned in flexible substrate, it is characterised in that comprise
Following steps:
One flexible substrate is provided；
Described flexible substrate prepares amorphous silicon layer；
The described flexible substrate being prepared for amorphous silicon layer is placed in the cavity of microwave heating equipment, to institute
Rheme amorphous silicon layer in flexible substrate carries out heating anneal, obtains polysilicon layer；
Wherein, the cavity of described microwave heating equipment contains multi-modal and multifrequency electromagnetism when heating
Ripple.
The method for annealing of the semiconductor structure being positioned in flexible substrate the most according to claim 1,
It is characterized in that, flexible substrate is placed on described microwave heating in the way of arbitrarily bending or any folding and sets
In standby cavity.
The method for annealing of the semiconductor structure being positioned in flexible substrate the most according to claim 1,
It is characterized in that, prepare in the step of amorphous silicon layer in described flexible substrate, using plasma strengthens
Prepared by chemical gaseous phase deposition PECVD, physical vapour deposition (PVD) PVD method or ald ALD
Described amorphous silicon layer.
The method for annealing of the semiconductor structure being positioned in flexible substrate the most according to claim 1,
It is characterized in that, before described flexible substrate prepares amorphous silicon layer, also comprise the steps of
Described flexible substrate prepares dielectric layer；
Preparing in the step of amorphous silicon layer in described flexible substrate, on described dielectric layer, preparation is described
Amorphous silicon layer.
The method for annealing of the semiconductor structure being positioned in flexible substrate the most according to claim 4,
It is characterized in that, in the described step preparing dielectric layer in described flexible substrate, use ald
ALD, physical vapour deposition (PVD) PVD method or chemical gaseous phase deposition CVD prepare described dielectric layer.
The method for annealing of the semiconductor structure being positioned in flexible substrate the most according to claim 4,
It is characterized in that,
The material of described dielectric layer is silicon dioxide.
The semiconductor structure being positioned in flexible substrate the most according to any one of claim 1 to 6
Method for annealing, it is characterised in that
The frequency of described microwave is between 1.5GHz to 20GHz.
The semiconductor structure being positioned in flexible substrate the most according to any one of claim 1 to 6
Method for annealing, it is characterised in that
At the described cavity that the described flexible substrate being prepared for amorphous silicon layer is placed on microwave heating equipment
In, the described amorphous silicon layer being positioned in flexible substrate is carried out in the step of heating anneal, a length of during heating
1 to 30 minute.
The semiconductor structure being positioned in flexible substrate the most according to any one of claim 1 to 6
Method for annealing, it is characterised in that the material of described flexible substrate is ultra-thin glass or organic polymer
Material.
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| KR102180089B1 (en) * | 2013-12-30 | 2020-11-18 | 삼성디스플레이 주식회사 | Method of manufacturing flexible substrate and method of manufacturing display device using the same |
| TWI528070B (en) * | 2014-04-18 | 2016-04-01 | 遠東科技大學 | Method of removing the polymer film of LCD module by microwave heating |
| US10692742B2 (en) | 2015-11-05 | 2020-06-23 | Industrial Technology Research Institute | Operating method of microwave heating device and microwave annealing process using the same |
| TWI649806B (en) * | 2017-09-29 | 2019-02-01 | 財團法人工業技術研究院 | Method for operating microwave heating device and microwave annealing process using the same |
| TWI568316B (en) | 2015-11-05 | 2017-01-21 | 財團法人工業技術研究院 | Multi-mode microwave heating device |
| CN107238648A (en) * | 2017-06-13 | 2017-10-10 | 复旦大学 | The method of low temperature preparation two-dimension flexible ion sensing fet |
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| US5851319A (en) * | 1995-03-31 | 1998-12-22 | California Institute Of Technology | Method and apparatus for selectively annealing heterostructures using microwaves |
| US6133076A (en) * | 1999-08-24 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor |
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