CN102983499A - Transmission-type electron beam pumping ultraviolet laser tube - Google Patents
Transmission-type electron beam pumping ultraviolet laser tube Download PDFInfo
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- CN102983499A CN102983499A CN2012104262818A CN201210426281A CN102983499A CN 102983499 A CN102983499 A CN 102983499A CN 2012104262818 A CN2012104262818 A CN 2012104262818A CN 201210426281 A CN201210426281 A CN 201210426281A CN 102983499 A CN102983499 A CN 102983499A
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Abstract
The invention relates to the field of laser, in particular to a semi-conductor laser device. A transmission-type electron beam pumping ultraviolet laser tube comprises an excitation source and a resonance cavity, wherein the resonance cavity is generated on a substrate, an electronic gun system is adopted in the excitation source, the resonance cavity is arranged on the target direction of the electronic gun system, a semi-conductor structure is arranged in the resonance cavity and is generated on the substrate, a high forbidden gap semi-conductor layer is arranged on the substrate, and another high forbidden gap semi-conductor layer with a different forbidden gap width is developed on the high forbidden gap semi-conductor layer. Semi-conductor layers with different forbidden gap widths are chosen in the transmission-type electron beam pumping ultraviolet laser tube, and therefore potential energy trap structures are generated on an energy band structure, wherein the energy band structure is formed by the semi-conductor layers and is in a new structure. The potential energy trap structures is in favor of limiting carriers of semi-conductor conduction bands and valence bands on a specific energy state and therefore a purpose of improving transferring efficiency is achieved.
Description
Technical field
The present invention relates to laser field, be specifically related to semiconductor laser.
Background technology
At present, laser mainly is three classes: a class is with laser diode, and a class is take the solid state laser of DPSS as the basis; Another kind of is as main gas laser take excimer laser.
Existing ultraviolet laser is mainly take gas laser as main.The problem that existing ultraviolet laser exists all that efficient is low, power consumption is large, power output is low etc.
Summary of the invention
The object of the invention is to, a kind of transmission-type electron beam pumping Ultra-Violet Laser pipe is provided, solve above technical problem.
Technical problem solved by the invention can realize by the following technical solutions:
Transmission-type electron beam pumping Ultra-Violet Laser pipe comprises a driving source, resonant cavity, and resonant cavity is created on the substrate, it is characterized in that, described driving source adopts an electron gun system;
Described resonant cavity is arranged on the target direction of described electron gun system;
Be provided with semiconductor structure in the described resonant cavity, described semiconductor structure is created on the described substrate, and described substrate is provided with a floor height bandgap semiconductor layer, and growth has the different high bandgap semiconductor layer of another layer energy gap on the described high bandgap semiconductor layer.
The present invention selects the different semiconductor layer of energy gap, forms the potential energy well structure on the band structure of new structure thereby form.These potential energy well structures are conducive to retrain charge carrier on semiconductor conduction band and the valence band on specific energy state, thereby reach the purpose that improves conversion efficiency.
Described semiconductor structure comprises the described high bandgap semiconductor layer of at least two kinds of unlike materials, and comprises at least three layers of described high bandgap semiconductor layer, and adjacent two-layer described high bandgap semiconductor layer is the described high bandgap semiconductor layer of unlike material.
Concrete can for: described semiconductor structure comprises the described high bandgap semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described high bandgap semiconductor layer, adjacent two-layer described high bandgap semiconductor layer is the described high bandgap semiconductor layer of unlike material, that is, the described high bandgap semiconductor layer alternative arrangement of two kinds of materials consists of stacked structure.
The thickness of every layer of described high bandgap semiconductor layer in 1 nanometer to 50 nanometers.
At least two-layer described high bandgap semiconductor is the described semiconductor structure of folded formation layer by layer, and the thickness of described semiconductor structure is more than or equal to 10nm.Thickness also can come specific design according to the needs of wave band and power.
The high bandgap semiconductor layer that comprises two-layer at least III-V family semiconductor material in the described semiconductor structure.Concrete III-V family semiconductor material can be the nitride based III-V family semiconductor material such as aluminium nitride, gallium nitride.
The high bandgap semiconductor layer that comprises one deck II-VI family semiconductor material in the described semiconductor structure.II-VI family semiconductor material can be the II-VI family semiconductor material of ZnMgSSe system.
Semiconductor material can be Lattice Matching, also can be that lattice is unmatched.High bandgap semiconductor layer can have strain, also can not have strain.In order to improve the wavelength of conversion efficiency and regulation and control laser.
Be provided with high reflection mirror at described semiconductor structure one end, the other end is provided with a low speculum, and the described low speculum outside also is provided with a transparent substrate.With one in high reflection mirror, the low speculum as described substrate.
Described electron gun system comprises a vacuum chamber, is placed with successively electron gun, electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism, resonant cavity, laser emitting mouth from described vacuum chamber one end to the other end;
The transparent substrate of described resonant cavity is pressed close to described laser emitting mouth.
The electron beam that described electron gun sends passes through electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism successively, forms the high-power electron beam that presents scanning mode, squeezes into described resonant cavity, for Laser emission provides energy.
The energy that high-power electron beam carries can make it pass surface as the resonant cavity of target to the lasing semiconductor structure layer of Danone.High-power electron beam can pass to bound electron in the semiconductor material to energy, thereby produces freely electronics--hole pair.The semiconductor material structure than more complete situation under, the free electron that produces like this--hole is to compound and produce photon.In the structure that described high reflection mirror, low speculum and described transparent substrate consist of, the photon that these generate can be screened, and the photon that satisfies specified conditions can be retained in the resonant cavity, and the photon that does not satisfy condition is scattered out resonant cavity.Satisfy photon interreflection in resonant cavity of specified conditions, thereby make more electronics--stimulated radiation is reached thus to compound and produce more photon in the hole, forms laser.
Described electron gun is provided with the negative electrode of electron emission, and described negative electrode can be the negative electrode that the materials such as metal, oxide, various nanotubes consist of.
The electricity controlling organization can be a high-tension electricity acceleration mechanism, is used for electron beam is accelerated, and improves energy.
Described electromagnetic deflection sweep mechanism is connected with for the one scan control system, described scanning control system is controlled described electromagnetic deflection sweep mechanism, and then the transmit direction by described electromagnetic deflection sweep mechanism control electron beam, and then make electron beam beat diverse location at described resonant cavity, make the diverse location Emission Lasers of semiconductor structure in the resonant cavity, it is overheated to avoid described semiconductor structure to cause because of a long-time Emission Lasers in position.
The minute surface of the high reflection mirror of resonant cavity, low speculum can be comprised of distributed bragg reflector mirror or the low metal film that absorbs of high reflection that the multilevel oxide deielectric-coating consists of.
Also comprise a resonant cavity cooling system, described resonant cavity cooling system comprises manifold, heat-exchange system, cooling fluid, described cooling fluid is arranged in the described manifold, described heat-exchange system connects the entrance and exit of described manifold, and described manifold comprises the peripheral manifold that is arranged on described resonant cavity periphery.Through whole resonant cavity periphery, resonant cavity is cooled cooling fluid by peripheral manifold flow, and coolant temperature rises, and the cooling fluid of intensification is left peripheral manifold from outlet, thereby the heat-exchange system of entering is cooled off with cooling fluid and again circulated.
Described cooling fluid adopts insulation, transparent cooling fluid.So that resonant cavity cooling system isolated high voltage, the setting of having saved other electric shielding systems.Described cooling fluid can adopt the medium cooling fluid, and the Fluorinert as 3M company makes also can adopt perfluor liquid or other non conducting fluids.
Description of drawings
Fig. 1 is cavity resonator structure schematic diagram of the present invention;
Fig. 2 is overall structure schematic diagram of the present invention.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect is easy to understand, further set forth the present invention below in conjunction with concrete diagram.
With reference to Fig. 1, transmission-type electron beam pumping Ultra-Violet Laser pipe comprises a driving source, resonant cavity 1, and resonant cavity 1 is created on the substrate, and driving source adopts an electron gun system 2.Resonant cavity 1 is arranged on the target direction of electron gun system 2.
Be provided with semiconductor structure in the resonant cavity 1, semiconductor structure is created on the substrate, and substrate is provided with a floor height bandgap semiconductor layer 11, and growth has the different high bandgap semiconductor layer 12 of another layer energy gap on the high bandgap semiconductor layer 11.
The present invention selects the different semiconductor layer of energy gap, forms the potential energy well structure on the band structure of new structure thereby form.These potential energy well structures are conducive to retrain charge carrier on semiconductor conduction band and the valence band on specific energy state, thereby reach the purpose that improves conversion efficiency.
Semiconductor structure comprises the high bandgap semiconductor layer 11,12 of at least two kinds of unlike materials, and comprises at least three floor height bandgap semiconductor layers, and two adjacent floor height bandgap semiconductor layers 11,12 are the high bandgap semiconductor layer of unlike material.
Concrete can for: semiconductor structure comprises the high bandgap semiconductor layer of two kinds of unlike materials, and comprise at least three floor height bandgap semiconductor layers, two adjacent floor height bandgap semiconductor layers 11,12 are the high bandgap semiconductor layer of unlike material, that is, the high bandgap semiconductor layer alternative arrangement of two kinds of materials consists of stacked structure.The thickness of every floor height bandgap semiconductor layer in 10 nanometers to 40 nanometers.At least two floor height bandgap semiconductor layers 11,12 stacked formation semiconductor structure, the thickness of semiconductor structure is more than or equal to 12nm.The thickness of semiconductor structure comes specific design according to required power and wavelength.
The high bandgap semiconductor layer 11 that comprises two-layer at least III-V family semiconductor material in the semiconductor structure.Concrete III-V family semiconductor material can be the nitride based III-V family semiconductor material such as aluminium nitride, gallium nitride.Comprise it also can being the high bandgap semiconductor layer 12 of two-layer at least II-VI family semiconductor material in the semiconductor structure.II-VI family semiconductor material can be the II-VI family semiconductor material of ZnMgSSe system.Semiconductor material can be Lattice Matching, also can be that lattice is unmatched.High bandgap semiconductor layer can have strain, also can not have strain.In order to improve the wavelength of conversion efficiency and regulation and control laser.
Be provided with high reflection mirror 13 at semiconductor structure one end, the other end is provided with a low speculum 14, and low speculum 14 outsides also are provided with a transparent substrate 15.With one in high reflection mirror 13, the low speculum 14 as substrate.
With reference to Fig. 2, electron gun system 2 comprises a vacuum chamber 20, is placed with successively electron gun 21, electricity controlling organization 22, electromagnetic focusing mechanism 23, electromagnetic deflection sweep mechanism 24, resonant cavity 1, laser emitting mouth 25 from vacuum chamber 20 1 ends to the other end.The transparent substrate 15 of resonant cavity 1 is attached on the laser emitting mouth 25.
The electron beam that electron gun 21 sends passes through electricity controlling organization 22, electromagnetic focusing mechanism 23, electromagnetic deflection sweep mechanism 24 successively, forms the high-power electron beam that presents scanning mode, squeezes into resonant cavity 1, for Laser emission provides energy.
The energy that high-power electron beam carries can make it pass surface as the resonant cavity 1 of target to the lasing semiconductor structure layer of Danone.High-power electron beam can pass to bound electron in the semiconductor material to energy, thereby produces freely electronics--hole pair.The semiconductor material structure than more complete situation under, the free electron that produces like this--hole is to compound and produce photon.In the structure that high reflection mirror 13, low speculum 14 and transparent substrate 15 consist of, the photon that these generate can be screened, and the photon that satisfies specified conditions can be retained in the resonant cavity 1, and the photon that does not satisfy condition is scattered out resonant cavity 1.Satisfy photon interreflection in resonant cavity 1 of specified conditions, thereby make more electronics--stimulated radiation is reached thus to compound and produce more photon in the hole, forms laser.
Electron gun 21 is provided with the negative electrode of electron emission, and negative electrode can be the negative electrode that the materials such as metal, oxide, various nanotubes consist of.Electricity controlling organization 22 can be a high-tension electricity acceleration mechanism, is used for electron beam is accelerated, and improves energy.
Electromagnetic deflection sweep mechanism 24 is connected with for the one scan control system, scanning control system control electromagnetic deflection sweep mechanism 24, and then the transmit direction by electromagnetic deflection sweep mechanism 24 control electron beams, and then make electron beam beat diverse location at resonant cavity 1, make the diverse location Emission Lasers of semiconductor structure in the resonant cavity 1, it is overheated to avoid semiconductor structure to cause because of a long-time Emission Lasers in position.
The minute surface of the high reflection mirror 13 of resonant cavity 1, low speculum 14 can be comprised of distributed bragg reflector mirror or the low metal film that absorbs of high reflection that the multilevel oxide deielectric-coating consists of.
Also comprise a resonant cavity 1 cooling system 26, resonant cavity 1 cooling system 26 comprises manifold, heat-exchange system, cooling fluid, and cooling fluid is arranged in the manifold, and heat-exchange system connects the entrance and exit of manifold, and manifold comprises the peripheral manifold that is arranged on resonant cavity 1 periphery.Through whole resonant cavity 1 periphery, resonant cavity 1 is cooled cooling fluid by peripheral manifold flow, and coolant temperature rises, and the cooling fluid of intensification is left peripheral manifold from outlet, thereby the heat-exchange system of entering is cooled off with cooling fluid and again circulated.
Cooling fluid adopts insulation, transparent cooling fluid.So that resonant cavity 1 cooling system 26 isolated high voltage, the setting of having saved other electric shielding systems.Cooling fluid can adopt the medium cooling fluid, and the Fluorinert as 3M company makes also can adopt perfluor liquid or other non conducting fluids.
The present invention has following advantage:
1. conversion efficiency is high.Because the present invention has used the semi-conducting material of different energy gaps, has all formed potential energy well on conduction band and valence band.Energy state is more concentrated in this potential energy well, and restriction is received in electronics and the hole fallen in the potential energy well, is conducive to luminous.
2. emission wavelength is adjustable.Energy state in the potential energy well and the concrete shape of potential energy well have closely and contact.By width and the height of adjusting potential energy well, can regulate the height of energy level in the potential energy well.And luminous wavelength and the energy level in the potential energy well have directly and contact.So just can regulate luminous wavelength by the shape of regulating potential energy well.By selecting different materials and structure, emission wavelength of the present invention can be contained far infrared to deep ultraviolet.
3. do not need to mix.It is very difficult that wide bandgap semiconductor mixes, and this also is that Ultra-Violet Laser is difficult to the main cause that realizes with traditional laser diode mode.The present invention has fundamentally avoided the doping problem, thereby makes making high efficiency, powerful ultraviolet laser become possibility.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in above-described embodiment and the specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (10)
1. transmission-type electron beam pumping Ultra-Violet Laser pipe comprises a driving source, resonant cavity, and resonant cavity is created on the substrate, it is characterized in that, described driving source adopts an electron gun system;
Described resonant cavity is arranged on the target direction of described electron gun system;
Be provided with semiconductor structure in the described resonant cavity, described semiconductor structure is created on the described substrate, and described substrate is provided with a floor height bandgap semiconductor layer, and growth has the different high bandgap semiconductor layer of another layer energy gap on the described high bandgap semiconductor layer.
2. transmission-type electron beam pumping Ultra-Violet Laser pipe according to claim 1, it is characterized in that: described semiconductor structure comprises the described high bandgap semiconductor layer of at least two kinds of unlike materials, and comprise at least three layers of described high bandgap semiconductor layer, adjacent two-layer described high bandgap semiconductor layer is the described high bandgap semiconductor layer of unlike material.
3. transmission-type electron beam pumping Ultra-Violet Laser pipe according to claim 2, it is characterized in that: described semiconductor structure comprises the described high bandgap semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described high bandgap semiconductor layer, adjacent two-layer described high bandgap semiconductor layer is the described high bandgap semiconductor layer of unlike material, that is, the described high bandgap semiconductor layer alternative arrangement of two kinds of materials consists of stacked structure.
4. transmission-type electron beam pumping Ultra-Violet Laser pipe according to claim 3, it is characterized in that: the thickness of every layer of described high bandgap semiconductor layer is at 1 nm ~ 9nm.
5. transmission-type electron beam pumping Ultra-Violet Laser pipe according to claim 4 is characterized in that: two-layer at least described high bandgap semiconductor is folded layer by layer to consist of described semiconductor structure, and the thickness of described semiconductor structure is more than or equal to 10nm.
6. according to claim 1,2,3,4 or 5 described transmission-type electron beam pumping Ultra-Violet Laser pipes, it is characterized in that: the high bandgap semiconductor layer that comprises one deck III-V family semiconductor material in the described semiconductor structure.
7. according to claim 1,2,3,4 or 5 described transmission-type electron beam pumping Ultra-Violet Laser pipes, it is characterized in that: the high bandgap semiconductor layer that comprises one deck II-VI family semiconductor material in the described semiconductor structure.
8. according to claim 1,2,3,4 or 5 described transmission-type electron beam pumping Ultra-Violet Laser pipes, it is characterized in that: described electron gun system comprises a vacuum chamber, is placed with successively electron gun, electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism, resonant cavity, laser emitting mouth from described vacuum chamber one end to the other end;
The transparent substrate of described resonant cavity is pressed close to described laser emitting mouth.
9. transmission-type electron beam pumping Ultra-Violet Laser pipe according to claim 8, it is characterized in that: described electromagnetic deflection sweep mechanism is connected with for the one scan control system, described scanning control system is controlled described electromagnetic deflection sweep mechanism, and then the transmit direction by described electromagnetic deflection sweep mechanism control electron beam, and then make electron beam beat diverse location at described resonant cavity, make the diverse location Emission Lasers of semiconductor structure in the resonant cavity, it is overheated to avoid described semiconductor structure to cause because of a long-time Emission Lasers in position.
10. transmission-type electron beam pumping Ultra-Violet Laser pipe according to claim 9, it is characterized in that: also comprise a resonant cavity cooling system, described resonant cavity cooling system comprises manifold, heat-exchange system, cooling fluid, described cooling fluid is arranged in the described manifold, described heat-exchange system connects the entrance and exit of described manifold, and described manifold comprises the peripheral manifold that is arranged on described resonant cavity periphery; Through whole resonant cavity periphery, resonant cavity is cooled cooling fluid by peripheral manifold flow, and coolant temperature rises, and the cooling fluid of intensification is left peripheral manifold from outlet, thereby the heat-exchange system of entering is cooled off with cooling fluid and again circulated.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012104262818A CN102983499A (en) | 2012-10-31 | 2012-10-31 | Transmission-type electron beam pumping ultraviolet laser tube |
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| CN2012104262818A CN102983499A (en) | 2012-10-31 | 2012-10-31 | Transmission-type electron beam pumping ultraviolet laser tube |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112448258A (en) * | 2019-08-29 | 2021-03-05 | 中国科学院上海微系统与信息技术研究所 | Laser device |
| CN112557863A (en) * | 2020-12-09 | 2021-03-26 | 中国科学院云南天文台 | Platform and method for measuring carrier conversion efficiency |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5473396A (en) * | 1993-09-08 | 1995-12-05 | Matsushita Electric Industrial Co., Ltd. | Display apparatus and method of making the same |
| CN102570295A (en) * | 2011-10-31 | 2012-07-11 | 上海显恒光电科技股份有限公司 | Laser device adopting annular electron-beam excitation and projection system |
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- 2012-10-31 CN CN2012104262818A patent/CN102983499A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5473396A (en) * | 1993-09-08 | 1995-12-05 | Matsushita Electric Industrial Co., Ltd. | Display apparatus and method of making the same |
| CN102570295A (en) * | 2011-10-31 | 2012-07-11 | 上海显恒光电科技股份有限公司 | Laser device adopting annular electron-beam excitation and projection system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112448258A (en) * | 2019-08-29 | 2021-03-05 | 中国科学院上海微系统与信息技术研究所 | Laser device |
| CN112448258B (en) * | 2019-08-29 | 2022-06-24 | 中国科学院上海微系统与信息技术研究所 | Laser device |
| CN112557863A (en) * | 2020-12-09 | 2021-03-26 | 中国科学院云南天文台 | Platform and method for measuring carrier conversion efficiency |
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Application publication date: 20130320 |