CN102983496A - Luminescent tube of transmission type electron beam pumping - Google Patents
Luminescent tube of transmission type electron beam pumping Download PDFInfo
- Publication number
- CN102983496A CN102983496A CN2012104451114A CN201210445111A CN102983496A CN 102983496 A CN102983496 A CN 102983496A CN 2012104451114 A CN2012104451114 A CN 2012104451114A CN 201210445111 A CN201210445111 A CN 201210445111A CN 102983496 A CN102983496 A CN 102983496A
- Authority
- CN
- China
- Prior art keywords
- electroluminescence
- electroluminescence semiconductor
- electron beam
- semiconductor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to the field of light sources, in particular to the field of electroluminescence. A luminescent tube of transmission type electron beam pumping comprises an electroluminescence semiconductor mechanism and an excitation source, wherein the electroluminescence semiconductor mechanism is generated on a base, utilizes an electric gun system is utilized by the excitation source, and the electroluminescence semiconductor mechanism is arranged on the electric gun system in the target direction. The electroluminescence semiconductor mechanism comprises at least two electroluminescence semiconductor layers which are stacked to form the electroluminescence semiconductor luminescence structure, the two adjacent electroluminescence luminescence semiconductor layers are electroluminescence luminescence semiconductor layers with forbidden bands having different widths, and therefore single-potential energy sink or multi-potential energy sink structures is formed on a band structure of materials which are constituted new, and convenience is brought to improvement of converting efficiency, and regulation and control of waves of light. The energy sink structures brings convenience to the fact that charge carrier on semiconductor guide belts and valence bands are restrained in special energy states, and therefore the purpose of improving converting efficiency is achieved.
Description
Technical field
The present invention relates to light source field, be specifically related to the electroluminescence field.
Background technology
At present, practical luminous mechanism mainly is two classes: a class is the traditional gas lamp take gas electricity aura as luminous mechanism; Another kind of is that a solid luminescence diode (LED) is main solid light source.These two kinds of light sources have very significantly defective.Traditional gas lamp conversion efficiency is poor, has a large amount of mixed and disorderly parts in the spectrum, is not good monochromatic light, and sizable energy dissipation is arranged.In addition, traditional gas lamp also has the problem of contaminated environment.Compare with traditional gas lamp as main solid state light emitter take solid luminescent diode (LED), improvement has been arranged in some aspects, but it has still conversion efficiency low, the low defective that waits of light intensity.
Summary of the invention
The object of the invention is to, a kind of luminous tube of transmission-type electron beam pumping is provided, solve above technical problem.
Technical problem solved by the invention can realize by the following technical solutions:
The luminous tube of transmission-type electron beam pumping comprises an electroluminescence semiconductor mechanism, and described electroluminescence semiconductor mechanism is created on the base, it is characterized in that also comprise a driving source, described driving source adopts an electron gun system;
Described electroluminescence semiconductor mechanism is arranged on the target direction of described electron gun system.
Described electroluminescence semiconductor mechanism comprises at least electroluminescence semiconductor layer of two-layer laminate, consists of semiconductor light emitting structure.Electroluminescence semiconductor mechanism can pass through speculum or base connecting electrode.
The material of these electroluminescence semiconductor layers can be Lattice Matching, also can be that lattice is unmatched.These electroluminescence semiconductor layers can have strain, also can not have strain.
Adjacent two-layer described electroluminescence semiconductor layer is the different electroluminescence semiconductor layer of energy gap, thereby forms single potential energy well or the structure of many potential energy well in the band structure of the new material that forms.So that improve conversion efficiency and regulation and control light wavelength.These potential energy well structures are conducive to retrain charge carrier on semiconductor conduction band and the valence band on specific energy state, thereby reach the purpose that improves conversion efficiency.
Described semiconductor light emitting structure comprises the described electroluminescence semiconductor layer of at least two kinds of unlike materials, and comprise at least three layers of described electroluminescence semiconductor layer, adjacent two-layer described electroluminescence semiconductor layer is the described electroluminescence semiconductor layer of unlike material.
Concrete can for: described semiconductor light emitting structure comprises the described electroluminescence semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described electroluminescence semiconductor layer, adjacent two-layer described electroluminescence semiconductor layer is the described electroluminescence semiconductor layer of unlike material, that is, the described electroluminescence semiconductor layer alternative arrangement of two kinds of materials consists of stacked structure.
The thickness of every layer of described electroluminescence semiconductor layer in 1 nanometer to 50 nanometers.
At least the described semiconductor light emitting structure of the two-layer stacked formation of described electroluminescence semiconductor layer, the thickness of described semiconductor light emitting structure is more than or equal to 10nm.Thickness also can come specific design according to the needs of wave band and power.
Described electron gun system comprises a vacuum chamber, is placed with successively electron gun, electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism, electroluminescence semiconductor mechanism, optical emission exit from described vacuum chamber one end to the other end.
The electron beam that described electron gun sends passes through electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism successively, forms the high-power electron beam present scanning mode, squeezes into described electroluminescence semiconductor mechanism, for the light emission provides energy.
The electron beam that described electron gun sends also can be operated in impulse ejection state or continuous emission state.These Selection of work states are that the concrete application according to the performance of luminescent material and luminous tube decides.
The energy that high-power electron beam carries can make it pass the semiconductor light emitting structure that produces light as the surface of the electroluminescence semiconductor mechanism of target to Danone.High-power electron beam can pass to bound electron in the semiconductor material to energy, thereby produces freely electronics--hole pair.The semiconductor material structure than more complete situation under, the free electron that produces like this--hole is to compound and produce photon.
Described electroluminescence semiconductor mechanism is followed successively by speculum, limiting layer, two-layer at least described electroluminescence semiconductor layer, limiting layer, and described base, and described base adopts light-transmitting materials; Described base is fixed on described light-emitting window place, and toward the outer side; Described speculum is towards described electron gun direction.The base that light passes printing opacity is transmitted into the external world.
Described electron gun is provided with the negative electrode of electron emission, and described negative electrode can be the negative electrode that the materials such as metal, oxide, various nanotubes consist of.
The electricity controlling organization can be a high-tension electricity acceleration mechanism, is used for electron beam is accelerated, and improves energy.
Described electromagnetic deflection sweep mechanism is connected with for the one scan control system, described scanning control system is controlled described electromagnetic deflection sweep mechanism, and then the transmit direction by described electromagnetic deflection sweep mechanism control electron beam, and then make electron beam beat diverse location in described electroluminescence semiconductor mechanism, make the diverse location of semiconductor light emitting structure in the electroluminescence semiconductor mechanism luminous, it is overheated to avoid described semiconductor light emitting structure to cause because a position is long-time luminous.
Described electromagnetic deflection sweep mechanism can also adopt the Electrostatic Electron deflection system.Provide deflection energy by static, the horizontal deflection of going forward side by side control.
Also comprise an electroluminescence semiconductor mechanism cooling system, described electroluminescence semiconductor mechanism cooling system comprises manifold, heat-exchange system, cooling fluid, described cooling fluid is arranged in the described manifold, described heat-exchange system connects the entrance and exit of described manifold, and described manifold comprises the peripheral manifold that is arranged on described electroluminescence semiconductor mechanism periphery.Cooling fluid by peripheral manifold flow through whole electroluminescence semiconductor mechanism periphery, electroluminescence semiconductor mechanism is cooled, and coolant temperature rises, and the cooling fluid of intensification is left peripheral manifold from outlet, thereby the heat-exchange system of entering is cooled off with cooling fluid and is again circulated.
Described cooling fluid adopts insulation, transparent cooling fluid.So that electroluminescence semiconductor mechanism cooling system isolated high voltage, the setting of having saved other electric shielding systems.Described cooling fluid can adopt the medium cooling fluid, and the Fluorinert as 3M company makes also can adopt perfluor liquid or other non conducting fluids.
Description of drawings
Fig. 1 is electroluminescence semiconductor of the present invention mechanism structural representation;
Fig. 2 is overall structure schematic diagram of the present invention.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect is easy to understand, further set forth the present invention below in conjunction with concrete diagram.
With reference to Fig. 1, with reference to Fig. 2, the luminous tube of transmission-type electron beam pumping comprises an electroluminescence semiconductor mechanism 1, and electroluminescence semiconductor mechanism 1 is created on the base 14, also comprises a driving source, and driving source adopts an electron gun system 2.Electroluminescence semiconductor mechanism 1 is arranged on the target direction of electron gun system 2.Electroluminescence semiconductor mechanism 1 comprises at least electroluminescence semiconductor layer 12 of two-layer laminate.Electroluminescence semiconductor mechanism can pass through the base connecting electrode.
The material of these electroluminescence semiconductor layers 12 can be Lattice Matching, also can be that lattice is unmatched.These electroluminescence semiconductor layers 12 can have strain, also can not have strain.
Adjacent two-layer electroluminescence semiconductor layer 12 is the different electroluminescence semiconductor layer 12 of energy gap, thereby forms single potential energy well or the structure of many potential energy well in the band structure of the new material that forms.So that improve conversion efficiency and regulation and control light wavelength.These potential energy well structures are conducive to retrain charge carrier on semiconductor conduction band and the valence band on specific energy state, thereby reach the purpose that improves conversion efficiency.
Semiconductor light emitting structure comprises the electroluminescence semiconductor layer 12 of at least two kinds of unlike materials, and comprises at least three layers of electroluminescence semiconductor layer 12, and adjacent two-layer electroluminescence semiconductor layer 12 is the electroluminescence semiconductor layer 12 of unlike material.
Concrete can for: semiconductor light emitting structure comprises the electroluminescence semiconductor layer 12 of two kinds of unlike materials, and comprise at least three layers of electroluminescence semiconductor layer 12, adjacent two-layer electroluminescence semiconductor layer 12 is the electroluminescence semiconductor layer 12 of unlike material, that is, electroluminescence semiconductor layer 12 alternative arrangements of two kinds of materials consist of stacked structure.The thickness of every layer of electroluminescence semiconductor layer 12 in 1 nanometer to 50 nanometers.
At least two-layer electroluminescence semiconductor layer 12 stacked formation semiconductor light emitting structures, the thickness of semiconductor light emitting structure is more than or equal to 10nm.Thickness also can come specific design according to the needs of wave band and power.Electron gun system 2 comprises a vacuum chamber 20, is placed with successively electron gun 21, electricity controlling organization, electromagnetic focusing mechanism 23, electromagnetic deflection sweep mechanism 24, electroluminescence semiconductor mechanism 1, optical emission exit from vacuum chamber 20 1 ends to the other end.
The electron beam that electron gun 21 sends passes through electricity controlling organization, electromagnetic focusing mechanism 23, electromagnetic deflection sweep mechanism 24 successively, forms the high-power electron beam that presents scanning mode, squeezes into electroluminescence semiconductor mechanism 1, for the light emission provides energy.The energy that high-power electron beam carries can make it pass the semiconductor light emitting structure layer that produces light as the surface of the electroluminescence semiconductor mechanism 1 of target to Danone.High-power electron beam can pass to bound electron in the semiconductor material to energy, thereby produces freely electronics--hole pair.The semiconductor material structure than more complete situation under, the free electron that produces like this--hole is to compound and produce photon.
With reference to Fig. 1, electroluminescence semiconductor mechanism 1 is followed successively by speculum 15, limiting layer 11, two-layer at least electroluminescence semiconductor layer 12, limiting layer 13, and base 14, and base 14 adopts light-transmitting materials; Base 14 is fixed on the light-emitting window place, and toward the outer side; Speculum is towards electron gun 21 directions.The base 14 that light passes printing opacity is transmitted into the external world.Except can with the base connecting electrode, also using speculum 15 connecting electrodes.
Electron gun 21 is provided with the negative electrode of electron emission, and negative electrode can be the negative electrode that the materials such as metal, oxide, various nanotubes consist of.The electricity controlling organization can be a high-tension electricity acceleration mechanism, is used for electron beam is accelerated, and improves energy.
Electromagnetic deflection sweep mechanism 24 is connected with for the one scan control system, scanning control system control electromagnetic deflection sweep mechanism 24, and then the transmit direction by electromagnetic deflection sweep mechanism 24 control electron beams, and then make electron beam beat diverse location in electroluminescence semiconductor mechanism 1, make the diverse location of semiconductor light emitting structure in the electroluminescence semiconductor mechanism 1 luminous, it is overheated to avoid semiconductor light emitting structure to cause because a position is long-time luminous.
Electromagnetic deflection sweep mechanism 24 can also adopt the Electrostatic Electron deflection system.Provide deflection energy by static, the horizontal deflection of going forward side by side control.Also comprise an electroluminescence semiconductor mechanism 1 cooling system, electroluminescence semiconductor mechanism 1 cooling system comprises manifold, heat-exchange system, cooling fluid, cooling fluid is arranged in the manifold, heat-exchange system connects the entrance and exit of manifold, and manifold comprises the peripheral manifold that is arranged on electroluminescence semiconductor mechanism 1 periphery.Cooling fluid by peripheral manifold flow through whole electroluminescence semiconductor mechanism 1 periphery, electroluminescence semiconductor mechanism 1 is cooled, and coolant temperature rises, and the cooling fluid of intensification is left peripheral manifold from outlet, thereby the heat-exchange system of entering is cooled off with cooling fluid and is again circulated.
Cooling fluid adopts insulation, transparent cooling fluid.So that electroluminescence semiconductor mechanism 1 cooling system isolated high voltage, the setting of having saved other electric shielding systems.Cooling fluid can adopt the medium cooling fluid, and the Fluorinert as 3M company makes also can adopt perfluor liquid or other non conducting fluids.
The present invention has following advantage:
1. conversion efficiency is high.Because the present invention has used the semi-conducting material of different energy gaps, has all formed potential energy well on conduction band and valence band.Energy state is more concentrated in this potential energy well, and restriction is received in electronics and the hole fallen in the potential energy well, is conducive to luminous.
2. emission wavelength is adjustable.Energy state in the potential energy well and the concrete shape of potential energy well have closely and contact.By width and the height of adjusting potential energy well, can regulate the height of energy level in the potential energy well.And luminous wavelength and the energy level in the potential energy well have directly and contact.So just can regulate luminous wavelength by the shape of regulating potential energy well.By selecting different materials and structure, emission wavelength of the present invention can be contained far infrared to deep ultraviolet.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in above-described embodiment and the specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (8)
1. the luminous tube of transmission-type electron beam pumping comprises an electroluminescence semiconductor mechanism, and described electroluminescence semiconductor mechanism is created on the base, it is characterized in that also comprise a driving source, described driving source adopts an electron gun system;
Described electroluminescence semiconductor mechanism is arranged on the target direction of described electron gun system.
2. the luminous tube of transmission-type electron beam pumping according to claim 1 is characterized in that: described electroluminescence semiconductor mechanism comprises at least electroluminescence semiconductor layer of two-layer laminate, consists of semiconductor light emitting structure.
3. the luminous tube of transmission-type electron beam pumping according to claim 2, it is characterized in that: adjacent two-layer described electroluminescence semiconductor layer is the different electroluminescence semiconductor layer of energy gap, thereby forms single potential energy well or the structure of many potential energy well in the band structure of the new material that forms.
4. the luminous tube of transmission-type electron beam pumping according to claim 3, it is characterized in that: described semiconductor light emitting structure comprises the described electroluminescence semiconductor layer of at least two kinds of unlike materials, and comprise at least three layers of described electroluminescence semiconductor layer, adjacent two-layer described electroluminescence semiconductor layer is the described electroluminescence semiconductor layer of unlike material.
5. the luminous tube of transmission-type electron beam pumping according to claim 3, it is characterized in that: described semiconductor light emitting structure comprises the described electroluminescence semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described electroluminescence semiconductor layer, adjacent two-layer described electroluminescence semiconductor layer is the described electroluminescence semiconductor layer of unlike material, that is, the described electroluminescence semiconductor layer alternative arrangement of two kinds of materials consists of stacked structure.
6. according to claim 1, the luminous tube of 2,3,4 or 5 described transmission-type electron beam pumpings, it is characterized in that: described electron gun system comprises a vacuum chamber, is placed with successively electron gun, electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism, electroluminescence semiconductor mechanism, optical emission exit from described vacuum chamber one end to the other end;
The electron beam that described electron gun sends passes through electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism successively, forms the high-power electron beam present scanning mode, squeezes into described electroluminescence semiconductor mechanism, for the light emission provides energy.
7. the luminous tube of transmission-type electron beam pumping according to claim 6, it is characterized in that: described electroluminescence semiconductor mechanism is followed successively by speculum, limiting layer, two-layer at least described electroluminescence semiconductor layer, limiting layer, and described base, described base adopts light-transmitting materials; Described base is fixed on described light-emitting window place, and toward the outer side; Described speculum is towards described electron gun direction.The base that light passes printing opacity is transmitted into the external world.
8. the luminous tube of transmission-type electron beam pumping according to claim 6, it is characterized in that: also comprise an electroluminescence semiconductor mechanism cooling system, described electroluminescence semiconductor mechanism cooling system comprises manifold, heat-exchange system, cooling fluid, described cooling fluid is arranged in the described manifold, described heat-exchange system connects the entrance and exit of described manifold, and described manifold comprises the peripheral manifold that is arranged on described electroluminescence semiconductor mechanism periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104451114A CN102983496A (en) | 2012-11-08 | 2012-11-08 | Luminescent tube of transmission type electron beam pumping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104451114A CN102983496A (en) | 2012-11-08 | 2012-11-08 | Luminescent tube of transmission type electron beam pumping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102983496A true CN102983496A (en) | 2013-03-20 |
Family
ID=47857321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104451114A Pending CN102983496A (en) | 2012-11-08 | 2012-11-08 | Luminescent tube of transmission type electron beam pumping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102983496A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112557863A (en) * | 2020-12-09 | 2021-03-26 | 中国科学院云南天文台 | Platform and method for measuring carrier conversion efficiency |
| CN114153084A (en) * | 2021-12-01 | 2022-03-08 | 电子科技大学 | Method for regulating and controlling optical properties of direct band gap semiconductor element with ultrahigh time precision |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5473396A (en) * | 1993-09-08 | 1995-12-05 | Matsushita Electric Industrial Co., Ltd. | Display apparatus and method of making the same |
| US20010019565A1 (en) * | 2000-03-03 | 2001-09-06 | Tatsuya Iwasaki | Electron-beam excitation laser |
| US20050110386A1 (en) * | 2003-11-03 | 2005-05-26 | Tiberi Michael D. | Laser cathode ray tube |
| CN101409963A (en) * | 2007-10-09 | 2009-04-15 | 中国科学院物理研究所 | Apparatus and method for generating ultraviolet light by electron beam pump crystal material |
-
2012
- 2012-11-08 CN CN2012104451114A patent/CN102983496A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5473396A (en) * | 1993-09-08 | 1995-12-05 | Matsushita Electric Industrial Co., Ltd. | Display apparatus and method of making the same |
| US20010019565A1 (en) * | 2000-03-03 | 2001-09-06 | Tatsuya Iwasaki | Electron-beam excitation laser |
| US20050110386A1 (en) * | 2003-11-03 | 2005-05-26 | Tiberi Michael D. | Laser cathode ray tube |
| CN101409963A (en) * | 2007-10-09 | 2009-04-15 | 中国科学院物理研究所 | Apparatus and method for generating ultraviolet light by electron beam pump crystal material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112557863A (en) * | 2020-12-09 | 2021-03-26 | 中国科学院云南天文台 | Platform and method for measuring carrier conversion efficiency |
| CN114153084A (en) * | 2021-12-01 | 2022-03-08 | 电子科技大学 | Method for regulating and controlling optical properties of direct band gap semiconductor element with ultrahigh time precision |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101062789B1 (en) | Ultraviolet Light Emitting Diode Using Surface Plasmon Resonance | |
| US9405146B2 (en) | Quantum dot color filter, liquid crystal panel and display device | |
| US10094537B2 (en) | Color conversion arrangement, a lighting unit, a solid state light emitter package and a luminaire | |
| KR20070012732A (en) | High efficiency light source using solid-state emitter and down-conversion material | |
| US20160028036A1 (en) | Quantum-Dot Based Hybrid LED Lighting Devices | |
| KR20110109289A (en) | Quantum dot light emitting diode device and light apparatus using the same | |
| CN110676250B (en) | Full-color mu LED display device without electrical contact and huge transfer | |
| JP2010226102A (en) | Reflective optical wavelength converter | |
| CN202564428U (en) | Semiconductor luminescent device | |
| US20230197882A1 (en) | ELECTRICAL CONTACT-FREE uLED LIGHT EMITTING DEVICE BASED ON WAVELENGHT DOWN-CONVERSION | |
| CN109585503A (en) | Display panel and preparation method thereof | |
| CN102983496A (en) | Luminescent tube of transmission type electron beam pumping | |
| CN102983495A (en) | Luminotron of electron beam pumping | |
| CN105185814A (en) | Organic electroluminescence displayer | |
| US9793685B2 (en) | Junctionless semiconductor light emitting devices | |
| CN203056369U (en) | Electron beam pumped type ultraviolet ray metal surface treatment system | |
| CN203282706U (en) | Three dimensional laser printer adopting mini-type high-power laser source | |
| CN203176744U (en) | Electronic gun excitation ultraviolet electroluminescent system | |
| CN102983499A (en) | Transmission-type electron beam pumping ultraviolet laser tube | |
| CN102983494A (en) | Reflection type electron beam pumping ultraviolet (UV) laser tube | |
| CN202564439U (en) | Semiconductor luminescent device | |
| CN203169629U (en) | Electron-beam pumping ultraviolet luminescent-tube sterilization system | |
| JP5085766B2 (en) | Surface light source device that emits light on both sides | |
| TW201517328A (en) | Light-emitting diode structure | |
| CN210006739U (en) | organic light-emitting panel and lamp device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130320 |