CN102931124A - Integration method for high-density thin film hybrid integrated circuit - Google Patents
Integration method for high-density thin film hybrid integrated circuit Download PDFInfo
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- CN102931124A CN102931124A CN2012104928157A CN201210492815A CN102931124A CN 102931124 A CN102931124 A CN 102931124A CN 2012104928157 A CN2012104928157 A CN 2012104928157A CN 201210492815 A CN201210492815 A CN 201210492815A CN 102931124 A CN102931124 A CN 102931124A
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Abstract
The invention discloses an integration method for a high-density thin film hybrid integrated circuit. The integration method comprises the following steps of: making a base substrate and a small ceramic substrate by a thin film making process, wherein the base substrate contains a thin film guide band, a stopping band and a bonding region pins of the small ceramic substrate, which are connected with the base substrate, are respectively arranged at the same end integrated with the base substrate from two faces of the small ceramic substrate in a thin film manner; forming a gold ball in a pin bonding region and the bonding region of the base substrate; integrating more than one semiconductor chip or sheet type device on the front face and the back face of the small ceramic substrate in a thin film hybrid integration mode, and bonding wires of the semiconductor chips; and finally, perpendicularly integrating the integrated small substrate on the base substrate to form the high-density thin film hybrid integrated circuit. Three-dimensional vertical perpendicular integration is adopted; and more than one semiconductor chip or sheet type device is perpendicularly integrated on the same base substrate, so that high-density three-dimensional integration is realized, and the integration of the high-density thin film hybrid integrated circuit is improved.
Description
Technical field
The present invention relates to hybrid integrated circuit, in particular to thin-film hybrid integrated circuit, furthermore, relate to the high density thin film hybrid IC.
Background technology
In the integrated technology of original thin film hybrid circuit, adopt the two dimensional surface integrated technology integrated of the mixing of ceramic substrate, semiconductor chip, the direct dress of other chip components and parts are attached on the film substrate, adopt again bonding wire (spun gold or Si-Al wire) to carry out Bonding, finish whole electrical equipment and connect, in specific atmosphere, Guan Ji and pipe cap are sealed to form at last.Original technology Main Problems is: owing to be to adopt the two dimensional surface integrated technology, semiconductor chip, other chip components and parts mount on the ceramic substrate with the largest face direction, the Bonding of chip and substrate needs certain span from a solder joint to another solder joint, add the requirement that also needs on the substrate according to physical circuit and make necessary film resistor, thin-film capacitor, thin film inductor etc., therefore, the chip attachment limited amount of substrate surface, integrated chip efficient is subjected to the impact of chip area, and chip integration is difficult to improve.
Through retrieval, the Chinese patent application part that relates to high density integrated circuit is many, such as No. 99813068.0 " high density integrated circuit ", No. 02121825.0 " high-density IC package structure and method thereof ", No. 200410063042.6 " high density integrated circuit ", No. 201010141336.1 " high density integrated circuit module structure ", No. 201110334691.5 " a kind of high-density integrated circuit package structure, method for packing and integrated circuits " etc.But there is no the application part of high density thin film hybrid IC.
Summary of the invention
The object of the invention provides the integrated approach of high-density film hybrid integrated circuit, and chip-count, other chip components and parts quantity with can be integrated on the increase substrate unit are reach the purpose that promotes the thin-film hybrid integrated circuit integration density.
The high density thin film hybrid IC that the inventor provides, to adopt three-dimensional vertical vertical integrated method to realize, specific practice is: the common process that adopts first film to make is made required film conduction band, stopband and bonding region at ceramic substrate, finish the making of base substrate and little ceramic substrate, wherein, the pin that is connected with base substrate of little ceramic substrate is produced on the same end integrated with base substrate from the two sides of little ceramic substrate respectively in the mode of film; Then the method for reflow welding forms gold goal after the pin bonding district adopts spun gold ball bonding or silk screen printing, uses the same method to form gold goal in the corresponding bonding of base substrate zone; Then, adopt film to mix integrated mode, at the integrated above semiconductor chip of the positive and negative of little ceramic substrate or chip components and parts, and finish the Bonding of semiconductor chip; At last, the little ceramic substrate after integrated vertically is integrated on the base substrate, finishes the high density thin film hybrid IC.
Said film is that the mode by magnetron sputtering or electron beam evaporation forms.
Above-mentioned conduction band, stopband, bonding region are to make by the method for photoetching, selective corrosion film, laser resistor trimming.
Above-mentioned little ceramic substrate is that the mode that adopts eutectic welding or gold ball bond, insulating adhesive to reinforce vertically is integrated on the base substrate.
The method of usefulness reflow welding forms behind above-mentioned gold goal employing spun gold ball bonding or the screen-printed metal slurry.
The inventor points out: above-mentioned chip components and parts are other chip components and parts that do not comprise semiconductor chip.
Advantage of the present invention is: 1. adopt three-dimensional vertically vertically integrated, an above semiconductor chip or other chip components and parts vertically can be integrated on the same base substrate, realize that density three-dimensional is integrated, greatly improve the integrated level of thin-film hybrid integrated circuit; 2. because can integrated more semiconductor chip, other chip components and parts, thereby can integrated more function; 3. can reduce the complete machine application system and use the quantity of electronic devices and components, thereby reduce the volume of complete machine, improve the reliability of application system; 4. owing to adopt High Density Integration, greatly shorten wire length, can further improve operating frequency and the reliability of thin-film hybrid integrated circuit.
The device that adopts the inventive method to produce is widely used in the fields such as space flight, aviation, boats and ships, precision instrument, communication, Industry Control, is specially adapted to change system miniaturization, highly reliable field, has wide market prospects and application space.
Description of drawings
Fig. 1 is the integrated technology schematic diagram of original thin-film hybrid integrated circuit, and Fig. 2 is the structural representation of high density thin film hybrid IC of the present invention.
1 is the shell pedestal among the figure, and 2 is ceramic substrate, and 3 is pin, and 4 is conduction band/bonding region, and 5 is semiconductor chip, and 6 is stopband, and 7 is chip components and parts, and 8 is insulating adhesive, and 9 is gold goal, and 10 is little substrate, and 11 is lead.
Embodiment
Embodiment:
The shake high density thin film hybrid IC integrated approach of magnificent honourable semiconductor company research and development of Guizhou, take high density thin film hybrid IC technique as example, the implementation technological process is as follows:
(1) chooses Guan Ji, the pipe cap of product demand;
(2) choosing of ceramic substrate: adopt alundum (Al2O3) ceramic substrate (Al
2O
3) or aluminium nitride ceramic substrate (Al
3N
4) make substrate.Comprise the base ceramic substrate that sticks on base, be used for three-dimensional vertical vertical integrated ceramic substrate;
(3) by the graphic making photo mask board of product design;
(4) in the high vacuum magnetic control platform or electron beam evaporation platform below 2 * 10-3Pa, form nickel-chromium alloy (80%Ni: 20%Cr) resistance film at ceramic substrate, film thickness is controlled by the square resistance of product requirement, carries out process monitoring by external FOUR-POINT PROBE METER;
(5) continue to be evacuated down to below 2 * 10-3Pa, adopt (4) method, form the layer of gold film, thickness 1～3 μ m of gold thin film, its thickness is tested by the thickness tester;
(6) by glue spreader coating photoresist, carry out prebake conditions in the baking oven about 80 ℃;
(7) carry out exposure, development with mask;
(8) carry out the high temperature post bake in the high temperature oven about 180 ℃;
(9) priority selective etch gold, nickel-chromium alloy;
(10) remove photoresist;
(11) laser resistor trimming, annealing are finished film substrate and are made;
(12) ceramic substrate behind the resistance trimming being carried out scribing separates;
(13) base substrate is attached on the base with synthetic weldering, Reflow Soldering or slurry bonding method dress;
(14) adopt gold wire bonding equipment, form gold goal in base substrate, the corresponding bonding zone that is used for three-dimensional vertical vertical integrated ceramic substrate respectively;
(15) integrated circuit packaging technology routinely carries out the assembling of semiconductor chip, other SMD components at the vertical vertical integrated ceramic substrate of three-dimensional;
(16) the three-dimensional vertical vertical integrated ceramic substrate to assembled semiconductor chip or other SMD components carries out leading wire bonding (spun gold or Si-Al wire) on special fixture;
(17) integrated circuit packaging technology routinely carries out the assembling of semiconductor chip, other SMD components at the base ceramic substrate.
(18) on special fixture, the base ceramic substrate of assembled semiconductor chip or other SMD components is carried out leading wire bonding (spun gold or Si-Al wire).
(19) mode that adopts slurry to paste is attached to the vertical dress of three-dimensional vertical vertical integrated ceramic substrate of finishing bonding on the corresponding zone of base ceramic substrate.
(20) sintering: at the high temperature sintering that carries out in the high-temperature cabinet under the protection of High Purity Nitrogen, about 180 ℃ about 2 hours, the vertical vertical integrated ceramic substrate of three-dimensional and base ceramic substrate organically are sintered together.
(21) sealing cap: in specific environment, carry out sealing cap, finish the integrated and production work of whole device.
(22) test, screening, printing and packing: press Product Process file and checking file, finish test, screening, printing and the packing work of device.
(23) product warehousing.
Claims (5)
1. the integrated approach of a high density thin film hybrid IC, it is characterized in that adopting first film producing process, make required film conduction band, stopband and bonding region at ceramic substrate, finish the making of base substrate and little ceramic substrate, wherein, the pin that is connected with base substrate of little ceramic substrate is produced on the same end integrated with base substrate from the two sides of little ceramic substrate respectively in the mode of film; Then form gold goal in pin bonding district and the corresponding bonding region of base substrate; Then, adopt film to mix integrated mode, at the integrated above semiconductor chip of the positive and negative of little ceramic substrate or chip components and parts, and finish the Bonding of semiconductor chip; At last, the little ceramic substrate after integrated vertically is integrated on the base substrate, finishes the high density thin film hybrid IC.
2. such as the described method of claim 1, it is characterized in that described film is that mode by magnetron sputtering or electron beam evaporation forms.
3. such as the described method of claim 1, it is characterized in that described conduction band, stopband, bonding region are to make by the method for photoetching, selective corrosion film, laser resistor trimming.
4. such as the described method of claim 1, it is characterized in that described little ceramic substrate is to adopt eutectic welding manner or vertical integrated with the mode of gold ball bond, insulating adhesive reinforcing.
5. such as the described method of claim 1, it is characterized in that described gold goal is to use the method for reflow welding to form after adopting spun gold ball bonding or screen-printed metal slurry.
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| CN201210492815.7A CN102931124B (en) | 2012-11-28 | 2012-11-28 | The integrated approach of high density thin film hybrid IC |
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| CN102931124B CN102931124B (en) | 2015-11-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485324A (en) * | 2014-12-15 | 2015-04-01 | 贵州振华风光半导体有限公司 | Lead-less ball foot surface adhesion type microwave film hybrid integrated circuit and integration method thereof |
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| US5397747A (en) * | 1993-08-19 | 1995-03-14 | International Business Machines Corporation | Vertical chip mount memory package and method |
| US20080174012A1 (en) * | 2007-01-23 | 2008-07-24 | Seiko Epson Corporation | Semiconductor device manufacturing method, semiconductor device, and wiring board |
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
| CN102522412A (en) * | 2011-12-28 | 2012-06-27 | 贵州振华风光半导体有限公司 | Integration method of high-integration high-reliable controllable working-temperature thin-film hybrid integrated circuit |
| CN202443971U (en) * | 2011-12-28 | 2012-09-19 | 贵州振华风光半导体有限公司 | High-integrated high-reliability working temperature controllable thin film hybrid integrated circuit |
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2012
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5295045A (en) * | 1990-11-14 | 1994-03-15 | Hitachi, Ltd. | Plastic-molded-type semiconductor device and producing method therefor |
| US5397747A (en) * | 1993-08-19 | 1995-03-14 | International Business Machines Corporation | Vertical chip mount memory package and method |
| US20080174012A1 (en) * | 2007-01-23 | 2008-07-24 | Seiko Epson Corporation | Semiconductor device manufacturing method, semiconductor device, and wiring board |
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
| CN102522412A (en) * | 2011-12-28 | 2012-06-27 | 贵州振华风光半导体有限公司 | Integration method of high-integration high-reliable controllable working-temperature thin-film hybrid integrated circuit |
| CN202443971U (en) * | 2011-12-28 | 2012-09-19 | 贵州振华风光半导体有限公司 | High-integrated high-reliability working temperature controllable thin film hybrid integrated circuit |
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| CN104485324A (en) * | 2014-12-15 | 2015-04-01 | 贵州振华风光半导体有限公司 | Lead-less ball foot surface adhesion type microwave film hybrid integrated circuit and integration method thereof |
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| CN102931124B (en) | 2015-11-18 |
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Inventor after: Yang Chenggang Inventor after: Su Guidong Inventor after: Wang Xuan Inventor before: Yang Chenggang Inventor before: Su Guidong |
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Address after: 550018 Guizhou Province, Guiyang city new North Avenue No. 238 Patentee after: Guizhou Zhenhua Fengguang Semiconductor Co.,Ltd. Address before: 550018 Guizhou Province, Guiyang city new North Avenue No. 238 Patentee before: GUIZHOU ZHENHUA FENGGUANG SEMICONDUCTOR Co.,Ltd. |