CN102909646A - Chemical mechanical grinding method - Google Patents
Chemical mechanical grinding method Download PDFInfo
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- CN102909646A CN102909646A CN2011102186232A CN201110218623A CN102909646A CN 102909646 A CN102909646 A CN 102909646A CN 2011102186232 A CN2011102186232 A CN 2011102186232A CN 201110218623 A CN201110218623 A CN 201110218623A CN 102909646 A CN102909646 A CN 102909646A
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Abstract
The invention provides a chemical mechanical grinding method. The chemical mechanical grinding method comprises the following steps of grinding and removing a first to-be-ground layer on a wafer by utilizing a fixed particle grinding pad; selecting the wafer with grinding residue; covering a second to-be-ground layer, wherein the material of the second to-be-ground layer is the same as that of the first to-be-ground layer; and grinding and removing the second to-be-ground layer on the wafer. According to the chemical mechanical grinding method provided by the invention, the second to-be-ground layer is covered on the wafer with the grinding residue, the second to-be-ground layer is ground by utilizing the fixed particle grinding pad, the material of the second to-be-ground layer is the same as that of the first to-be-ground layer, and thus the first to-be-ground layer is ground through the same grinding method; and during the process of grinding the second to-be-ground layer, the grinding rate of the fixed particle grinding pad is gradually increased and is up to a stable value, the grinding residue is completely removed by utilizing the grinding rate while the second to-be-ground layer is removed, thus the grinding effect is increased, and the grinding residue is completely removed.
Description
Technical field
The present invention relates to a kind of method for manufacturing integrated circuit, relate in particular to a kind of chemical and mechanical grinding method for improving immobilized particles grinding pad grinding effect.
Background technology
Electronic system and circuit have significant contribution to the progress of modern society, and are used for multiple application to obtain best result.Can provide the electronic system of this optimum to generally include integrated circuit (IC) on the chip die.For the manufacturing of IC wafer, carrying out polishing step in effective and sufficient mode is a key.Complicated IC has a plurality of different superimposed layers usually, and every one deck counterpoise is stacked in the top of front one deck and includes a plurality of assemblies by multiple mutual contact mode.When the said layer of IC assembly stack is interior, the final surface topography of these complicated IC was scraggly (for example, they is similar to the convex-concave land " mountain range " in a plurality of riser portions or " hills " or falling portion or " mountain valley " usually).
In the prior art, polishing is the best approach that obtains the crystal column surface complanation.The most frequently used polishing technology is cmp (CMP, Chemical Mechanical Planarization, also claim chemically mechanical polishing), described CMP uses the lapping liquid of spraying on polishing pad, in order to help to make the wafer smoothing and with predictable mode complanation.The complanation attribute of lapping liquid generally is made of abrasion friction component and chemical reaction component.The abrasion friction component comes from the abrasive grains that is suspended in the lapping liquid.Described abrasive grains can increase the abrasive characteristic of polishing pad when making CONTACT WITH FRICTION with crystal column surface.The material generation chemical reaction of chemical reaction component and described crystal column surface is by softening with the crystal column surface generation chemical reaction that will be polished or decomposing.Abrasion friction component and chemical reaction component help the grinding pad planarizing surface of wafer.
With lapping liquid the mode to polishing pad of distributing can affect significantly lapping liquid when helping polishing grinding and the effect of chemical characteristic, affect simultaneously clearance.Traditional lapping liquid is sent to crystal column surface.The irregular surface of the common tool of polishing material comprises a plurality of very little pit and grooves that are formed on the pad interface.Pit on the described convex-concave surface and groove can be collected lapping liquid, in order to be sent to just polished crystal column surface as reservoir.Although the lapping liquid that usually uses in the chemical mechanical planarization process can provide some benefit, also can cause disadvantageous side effect.
Traditional lapping liquid compartment system does not generally provide the even distribution of lapping liquid on wafer surface; for example most of lapping liquid compartment systems offer new lapping liquid at the edge of wafer; then be transported to the center of wafer through the rotation of grinding pad and wafer, the solid abrasive particle in the part lapping liquid can precipitate in lapping liquid solution or assemble.When then lapping liquid was transported to crystal circle center, the abrasive characteristic of lapping liquid can weaken.If the part of wafer exposes and excessive lapping liquid joint, then this part can be got rid of at faster speed.Thereby lapping liquid can make more abrasion friction masterpiece be used for the edge of wafer, thereby can get rid of quickly material, and the slurry that is positioned at crystal circle center's partial failure then can be removed material more slowly, causes forming the crystal column surface of inhomogeneous polishing.In addition, in polishing process, along with the consumption of lapping liquid can produce useless particle, the grinding that these useless particles comprise inefficacy is with the material of removing on particle and the wafer.The grinding of losing efficacy is not easy because chemical reaction decomposes with particle, then can be deposited on crystal column surface, enter in the groove and pit in the polishing pad with the formation of useless particle, affects grinding effect and efficient.
Therefore, industry proposes a kind of effective removal crystal column surface and prevents groove and the chemical-mechanical grinding device of pit phenomenon generation, namely adopts immobilized particles grinding pad (Fixed Abrasive Pad).Described immobilized particles grinding pad has been gathered fixedly abrasive grains and grinding pad, does not need the fixedly abrasive grains of free floating, can reach better grinding effect, and this is more and more important to 45nm level even following technology.It is a kind of for the immobilized particles grinding pad on the chemical-mechanical grinding device that the patent No. is that the United States Patent (USP) of US2002/0049027A1 discloses, and the described immobilized particles grinding pad of this patent has solved above-mentioned technical problem.In addition, publication number is fixedly abrasive chemical-mechanical grinding device and its implementation that the Chinese patent of CN1438931A discloses a kind of swing, chemical-mechanical grinding device described in this patent comprises having fixedly grinding pad, feeding roller and the withdrawal cylinder of abrasive grains, and described grinding pad motion is controlled in the configuration that utilizes the reel operation, thereby in extremely short time and few labour the used part of grinding pad is replaced by new grinding pad, continues wafer is carried out cmp.
Because utilizing the grinding technics of immobilized particles grinding pad is newer technique, technology controlling and process is not very ripe, the problems such as the pressure inequality in the process of lapping or hardware failure can cause that all the crystal column surface grinding rate is uneven, cause the wearing and tearing of fixing abrasive grains or come off, reduce grinding rate, even the grinding that causes crystal column surface to be left over is residual that wafer is caused scuffing (Scratch), affects grinding effect, affects productive rate and the reliability of wafer.
Therefore, in process of lapping, can flow into chemical liquids between immobilized particles grinding pad and the wafer layer to be ground, contain polymeric additive in this chemical liquids, to reduce fixedly abrasive grains to the scuffing of wafer.Simultaneously, polymeric additive also is easy to be adsorbed on and grinds on the stop-layer, and when the immobilized particles grinding pad is ground to the grinding stop-layer, a large amount of polymeric additives will be adsorbed onto this grinding stop-layer surface, prevention is to the further grinding of crystal column surface, thereby reaches self-braking function.Fig. 1 is the chemical and mechanical grinding method that utilizes the immobilized particles grinding pad in the prior art.As shown in Figure 1, comprise grinding stop-layer 14 and layer to be ground (indicating among the figure) on the substrate 10 of wafer.In process of lapping, the fixedly abrasive grains 21 of immobilized particles grinding pad 20 produces mechanical friction with layer to be ground, removes layer to be ground, simultaneously, to the layer to be ground of wafer and fixing inflow chemical liquids 30 between the abrasive grains 21, contain polymeric additive 31 in this chemical liquids 30; When cmp proceeds to end stage, crystal column surface can expose most grinding stop-layer 14, then polymeric additive 31 can be adsorbed on and grind stop-layer 14 surfaces, the grinding of 20 pairs of etching stop layers of the immobilized particles that slows down grinding pad, thus the fixedly scuffing of 21 pairs of wafers of abrasive grains reduced.
Yet because a large amount of polymeric additives 31 is adsorbed on the surface of grinding stop-layer 14, less grinding residual 12 can be wrapped up by polymeric additive 31, and making this part grind residual 12 can't effectively be removed, thereby has reduced grinding effect.
Summary of the invention
The object of the present invention is to provide a kind of chemical and mechanical grinding method, to improve the grinding effect of immobilized particles grinding pad.
For addressing the above problem, the invention provides a kind of chemical and mechanical grinding method, to improve the grinding effect of immobilized particles grinding pad, comprising: utilize the first layer to be ground on the immobilized particles grinding pad grinding removal wafer; Detect the grinding effect of described wafer, select to have and grind residual wafer; Described have grind residual wafer and cover the second layer to be ground, the material of the described second layer to be ground is identical with first to be ground layer material; Utilize described immobilized particles grinding pad grinding removal the described second layer to be ground and described grinding residual.
Further, in utilizing described immobilized particles grinding pad to grind to remove the residual step of the second layer to be ground on the wafer and described grinding, the grinding rate of described immobilized particles grinding pad improves gradually, reaches at last a stationary value.
Better, in utilizing described immobilized particles grinding pad to grind to remove the residual step of the second layer to be ground on the wafer and described grinding, the grinding rate of described immobilized particles grinding pad reaches a stationary value at last, and described stationary value is 300～1500 A/mins of clocks.
Further, the thickness of the described second layer to be ground is less than the thickness of the described first layer to be ground.
Further, thickness 50～1000 dusts of the described second layer to be ground.
Further, the described first layer to be ground is shallow trench isolating oxide layer, copper layer, tungsten layer, Ge-Sb-Te layer or metal gates dielectric layer.
Further, utilizing described immobilized particles grinding pad to grind in the step of the first layer to be ground on the removal wafer, also comprising between described fixedly abrasive grains and the described first layer to be ground flowing into chemical liquids.
Further, in utilizing the residual step of described immobilized particles grinding pad grinding removal the described second layer to be ground and described grinding, also comprise between described fixedly abrasive grains and the described second layer to be ground flowing into chemical liquids.
Further, contain polymeric additive in the described chemical liquids.
In sum, chemical and mechanical grinding method of the present invention, after grinding removal the described first layer to be ground, select to have and grind residual wafer, has the residual wafer covering of grinding the second layer to be ground, and utilize the immobilized particles grinding pad that the second layer to be ground is ground, utilizing the immobilized particles grinding pad to grind in the process of the second layer to be ground, grinding rate improves gradually and reaches a stationary value, when removing the second layer to be ground, utilize the effect of inertia of stable grinding rate thoroughly to remove the second layer to be ground and grind residual.
Further, because the material of the second layer to be ground is identical with first to be ground layer of material, therefore can adopt identical lapping mode to grind.The thickness of the second layer to be ground is selected 50～1000 dusts, guaranteed that grinding rate has time enough to bring up to stationary value on the one hand, utilize the effect of inertia of stable grinding rate thoroughly to remove the second layer to be ground and grind residual, the thickness of the second layer to be ground is moderate has on the other hand guaranteed shorter milling time, and then when improving immobilized particles grinding pad grinding effect, improve the grinding efficiency of immobilized particles grinding pad.
Description of drawings
Fig. 1 is the chemical and mechanical grinding method that utilizes the immobilized particles grinding pad in the prior art.
Fig. 2 is the schematic flow sheet of chemical and mechanical grinding method in one embodiment of the invention.
Fig. 3 is the brief configuration schematic diagram of the front wafer of cmp in one embodiment of the invention.
Fig. 4～Fig. 7 is the brief configuration schematic diagram in the chemical and mechanical grinding method process of lapping in one embodiment of the invention.
The specific embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in protection scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, and when example of the present invention was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as limitation of the invention.
Chemical and mechanical grinding method of the present invention is used for the layer to be ground on the grinding crystal wafer, Fig. 3 is the brief configuration schematic diagram of the front wafer of cmp in one embodiment of the invention, as shown in Figure 3, be formed with successively on the substrate 100 of described wafer to be ground and grind stop-layer 104 and the first layer 101 to be ground, utilize the immobilized particles grinding pad to grind and remove the described first layer 101 to be ground, and stop at described grinding stop-layer 104.Chemical and mechanical grinding method of the present invention can be used for fleet plough groove isolation structure, copper interconnection layer, tungsten contact hole layer, Ge-Sb-Te layer and the isostructural grinding technics of HiK dielectric layer, therefore the described first layer to be ground 101 can for shallow trench isolation from oxide layer, copper layer, tungsten layer, Ge-Sb-Te layer or metal gates dielectric layer etc., the present invention will not limit this.
Fig. 2 is the schematic flow sheet for chemical and mechanical grinding method in one embodiment of the invention, and Fig. 4～Fig. 7 is the brief configuration schematic diagram in the chemical and mechanical grinding method process of lapping in one embodiment of the invention.Please in conjunction with Fig. 2～Fig. 7, the chemical and mechanical grinding method that one embodiment of the invention provides may further comprise the steps:
Step S01: utilize immobilized particles grinding pad 200 to grind first to be ground layer 101 that removes on the wafer, specifically as shown in Figure 4;
Particularly, carry out the cmp step, utilize immobilized particles grinding pad 200 to grind the first layer 101 to be ground on the substrate 100 of removing wafers, and stop at and grind on the stop-layer 104; In process of lapping, between the fixedly abrasive grains 201 of immobilized particles grinding pad 200 and the first layer 101 to be ground, add chemical liquids 300, contain polymeric additive 301 in the described chemical liquids 300, polymeric additive 301 is fixedly playing lubrication, the scuffing that 201 pairs of crystal column surfaces of the fixedly abrasive grains that is conducive to reduce cause between abrasive grains 201 and the first layer 101 to be ground.Simultaneously; polymeric additive 301 also can be easy to be adsorbed on and grind on the stop-layer 104; when being ground to grinding stop-layer 104; a large amount of polymeric additives 301 will be adsorbed onto described etching stop layer 104 surfaces; stop further and grind, thereby protection etching stop layer 104 and the structure of etching stop layer below 104 are not polished damage.
Step S02: detect the grinding effect of described wafer, select to have and grind residual 102 wafer.
Through after the step S01, be not that the first layer 101 to be ground on all wafer can both thoroughly be ground and removes, as shown in Figure 5, the part wafer has the grinding residual 102 of the first layer 101 to be ground in its substrate 100 surface residues.Polymeric additive 301 can remain residual impurity 102 surfaces by wrapping portion, and immobilized particles grinding pad 200 can't be ground remove remaining residue impurity 102, thus formation grinding residual 102 as shown in Figure 5.It is residual 102 whether the crystal column surface after can grinding by defect detector (Defect Scan) or microscopic examination have as shown in Figure 5 grinding, grinds residually 102 if having, and wafer will carry out subsequent step.
Step S03: the material that covers second layer the 103, described second layer 103 to be ground to be ground at the crystal column surface with grinding residual 102 is identical with the material of the first layer 101 to be ground, specifically as shown in Figure 6;
Wherein, the thickness of the described second layer 103 to be ground is less than the thickness of the first layer 101 to be ground, and the thickness of the described second layer 103 to be ground is preferably 50～1000 dusts.In the present embodiment, the material of the described second layer 103 to be ground is identical with the material of the first layer 101 to be ground, therefore can adopt identical grinding technics to grind, reduces and grinds cost; And the thickness of the second layer to be ground 103 is 50～1000 dusts, thinner thickness, and milling time is short, affects less on the fixing grinding efficiency of abrasive grains pad 200.
Step S04: utilize described immobilized particles grinding pad 200 to grind to remove the second layer 103 to be ground of crystal column surfaces and described grinding residual 102, and stop at and grind on the stop-layer 104, form structure shown in Figure 7.
Better, grind in the process of the second layer 103 to be ground at described immobilized particles grinding pad 200, grinding rate improves gradually and reaches a stationary value.When having removed the second layer 103 to be ground, utilize the effect of inertia of grinding rate thoroughly to remove grinding the residual 102 and second layer 103 to be ground of first to be ground layer 101.Wherein, described stationary value (stable grinding rate) is 300～1500 A/mins of clocks.
In sum, chemical and mechanical grinding method of the present invention, after grinding removal the described first layer 101 to be ground, select to have and grind residual 102 wafer, cover the second layer 103 to be ground at the wafer upper surface with grinding residual 102, and utilize 200 pairs of the second layers 103 to be ground of immobilized particles grinding pad to grind, utilizing immobilized particles grinding pad 200 to grind in the process of the second layer to be ground, grinding rate improves gradually and reaches a stationary value, when removing the second layer to be ground, utilize the effect of inertia of stable grinding rate thoroughly to remove the second layer 103 to be ground and grind residual 102.
Further, because the material of the second layer 103 to be ground is identical with the first layer 101 material to be ground, therefore can grind with identical lapping mode.The thickness of the second layer 103 to be ground is selected 50～1000 dusts, guaranteed that grinding rate has time enough to bring up to stationary value on the one hand, thoroughly remove the second layer 103 to be ground and grind residual 102 with the effect of inertia that utilizes stable grinding rate, the thickness of the second layer to be ground 103 is moderate has on the other hand guaranteed shorter milling time, and then when improving immobilized particles grinding pad 200 grinding effects, improved the grinding efficiency of immobilized particles grinding pad 200.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention; have in the technical field under any and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (9)
1. chemical and mechanical grinding method is used for improving the grinding effect of immobilized particles grinding pad, comprising:
Utilize the first layer to be ground on the immobilized particles grinding pad grinding removal wafer;
Detect the grinding effect of described wafer, select to have and grind residual wafer;
Described have grind residual wafer and cover the second layer to be ground, the material of the described second layer to be ground is identical with described first to be ground layer material;
Utilize described immobilized particles grinding pad grinding removal the described second layer to be ground and described grinding residual.
2. chemical and mechanical grinding method as claimed in claim 1, it is characterized in that, in utilizing described immobilized particles grinding pad to grind to remove the residual step of the second layer to be ground on the wafer and described grinding, the grinding rate of described immobilized particles grinding pad improves gradually, reaches at last a stationary value.
3. chemical and mechanical grinding method as claimed in claim 2 is characterized in that, described stationary value is 300～1500 A/mins of clocks.
4. chemical and mechanical grinding method as claimed in claim 1 is characterized in that, the thickness of the described second layer to be ground is less than the thickness of the described first layer to be ground.
5. chemical and mechanical grinding method as claimed in claim 4 is characterized in that, thickness 50～1000 dusts of the described second layer to be ground.
6. chemical and mechanical grinding method as claimed in claim 1 is characterized in that, the described first layer to be ground is shallow trench isolating oxide layer, copper layer, tungsten layer, Ge-Sb-Te layer or metal gates dielectric layer.
7. chemical and mechanical grinding method as claimed in claim 1, it is characterized in that, utilizing described immobilized particles grinding pad to grind in the step of the first layer to be ground on the removal wafer, also comprising between described immobilized particles grinding pad and the described first layer to be ground flowing into chemical liquids.
8. chemical and mechanical grinding method as claimed in claim 1, it is characterized in that, in utilizing the residual step of described immobilized particles grinding pad grinding removal the described second layer to be ground and described grinding, also comprise between described immobilized particles grinding pad and the described second layer to be ground flowing into chemical liquids.
9. the chemical and mechanical grinding method described in claim 7 or 8 is characterized in that, contains polymeric additive in the described chemical liquids.
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| US20020049027A1 (en) * | 1997-08-22 | 2002-04-25 | Walker Michael A. | Fixed abrasive polishing pad |
| US20030109195A1 (en) * | 2000-06-30 | 2003-06-12 | Lam Research Corp. | Oscillating fixed abrasive CMP system and methods for implementing the same |
| US20040266055A1 (en) * | 2003-06-27 | 2004-12-30 | Ravi Kramadhati V. | Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby |
| US20050085050A1 (en) * | 2003-10-21 | 2005-04-21 | Draney Nathan R. | Substrate thinning including planarization |
| US20060199389A1 (en) * | 2005-03-04 | 2006-09-07 | Elpida Memory, Inc. | Method of manufacturing semiconductor device having planarized interlayer insulating film |
| CN101783292A (en) * | 2009-01-20 | 2010-07-21 | 中芯国际集成电路制造(上海)有限公司 | Method for reworking metal layer |
| US20100330881A1 (en) * | 2009-06-24 | 2010-12-30 | Siltronic Ag | Method For The Double Sided Polishing Of A Semiconductor Wafer |
| CN101982303A (en) * | 2010-10-11 | 2011-03-02 | 南京航空航天大学 | Grooved frozen solidified grinding material polishing pad and preparation method thereof |
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2011
- 2011-08-01 CN CN201110218623.2A patent/CN102909646B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6135856A (en) * | 1996-01-19 | 2000-10-24 | Micron Technology, Inc. | Apparatus and method for semiconductor planarization |
| US20020049027A1 (en) * | 1997-08-22 | 2002-04-25 | Walker Michael A. | Fixed abrasive polishing pad |
| US20030109195A1 (en) * | 2000-06-30 | 2003-06-12 | Lam Research Corp. | Oscillating fixed abrasive CMP system and methods for implementing the same |
| US20040266055A1 (en) * | 2003-06-27 | 2004-12-30 | Ravi Kramadhati V. | Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby |
| US20050085050A1 (en) * | 2003-10-21 | 2005-04-21 | Draney Nathan R. | Substrate thinning including planarization |
| US20060199389A1 (en) * | 2005-03-04 | 2006-09-07 | Elpida Memory, Inc. | Method of manufacturing semiconductor device having planarized interlayer insulating film |
| CN101783292A (en) * | 2009-01-20 | 2010-07-21 | 中芯国际集成电路制造(上海)有限公司 | Method for reworking metal layer |
| US20100330881A1 (en) * | 2009-06-24 | 2010-12-30 | Siltronic Ag | Method For The Double Sided Polishing Of A Semiconductor Wafer |
| CN101982303A (en) * | 2010-10-11 | 2011-03-02 | 南京航空航天大学 | Grooved frozen solidified grinding material polishing pad and preparation method thereof |
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