CN102879125A - In-situ temperature testing device and method - Google Patents
In-situ temperature testing device and method Download PDFInfo
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- CN102879125A CN102879125A CN2011101983393A CN201110198339A CN102879125A CN 102879125 A CN102879125 A CN 102879125A CN 2011101983393 A CN2011101983393 A CN 2011101983393A CN 201110198339 A CN201110198339 A CN 201110198339A CN 102879125 A CN102879125 A CN 102879125A
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Abstract
The embodiment of the invention provides an in-situ temperature testing device and an in-situ temperature testing method. The in-situ temperature testing device is used for performing absorption spectrum test analysis or reflection spectrum test analysis on a light signal which is transmitted through a substrate or a deposited material layer on the substrate or is reflected by the substrate or the deposited material layer on the substrate in a vapor deposition process, so that an absorption spectrum curve/or a reflection spectrum curve corresponding to the substrate or the deposited material layer on the substrate can be obtained; the width of a forbidden gap corresponding to the substrate or the deposited material layer on the substrate can be obtained by analyzing the absorption spectrum curve/or the reflection spectrum curve; the temperature corresponding to the width of the forbidden gap of the substrate or the deposited material layer on the substrate is determined on the basis of a relation curve between the width of the forbidden gap of a material and a temperature; and therefore, the substrate temperature and the substrate temperature distribution can be accurately monitored by utilizing the in-situ temperature testing device provided by the embodiment of the invention.
Description
Technical field
The present invention relates to field of photoelectric technology, particularly a kind of in-situ temperature proving installation and method of the temperature for the deposited material layer on test substrate or the substrate.
Background technology
MOCVD is the english abbreviation of metal organic compound chemical vapor deposition (Metal-organic Chemical Vapor Deposition).MOCVD is a kind of Novel air phase epitaxy growing technology that grows up on the basis of vapor phase epitaxial growth (VPE).It is with the source material as the crystal growth such as the hydride of the organic compound of III family, II family element and V, VI family element, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.
The below describes the principle of existing MOCVD technique.Particularly, please refer to the inner structure synoptic diagram of existing a kind of MOCVD device shown in Figure 1.
Be formed with the gas feed unit 11 and the pedestal 12 that are oppositely arranged in the reaction chamber 10.Described gas feed unit can be spray head (Showerhead, SH), in this spray head a plurality of apertures can be set, the material of described pedestal 12 can be the materials such as graphite, and described pedestal 12 can be rotated motion with certain speed, usually place multi-disc substrate 121 on the described pedestal 12, the material of described substrate 121 is generally expensive sapphire.The below of described pedestal 12 also is formed with heating unit 13, and described heating unit 13 utilizes thermal-radiating mode that described substrate 121 is heated, so that the temperature on described substrate 121 surfaces reaches the temperature that epitaxial deposition process needs.
When carrying out MOCVD technique, source gas enters the conversion zone (position on the surface of close substrate 121) of substrate 12 tops from the aperture of gas feed unit 11, described substrate 121 is owing to the heat radiation effect of heating unit 13 has certain temperature, thereby this temperature is so that carry out chemical reaction between the gas of source, thereby forms deposited material layer on substrate 121 surfaces.Needs according to technique, the deposited material layer that forms on the substrate 121 comprises 3 layers usually at least, that is: be positioned at the first cushion on this substrate, be positioned at the multiple quantum well active layer on described the first cushion and be positioned at the second cushion of described Multiple-quantum active layer top.The material of described the first cushion and the second cushion can be for mixing or plain GaN, and described multiple quantum well active layer is as the LED luminescent layer, and its material can be InGaN or AlGaN or both combinations.
In practice, find that utilizing existing MOCVD equipment to carry out epitaxial deposition process exists following problem at least: the actual temperature of the deposited material layer on substrate or the substrate is difficult to accurately detect; The deposited material layer that forms on the substrate in uneven thickness and/or in the extension deposition process or epitaxial deposition process find that there is serious buckling deformation in substrate after finishing; This warpage causes the temperature distributing disproportionation of substrate or deposited material layer even.Above problem not only can affect the yield of led chip, and the scrapping in a large number of the led chip that also can cause in the situation of substrate gross distortion, thereby causes huge economic loss for the manufacturer of led chip.
Summary of the invention
The problem that the embodiment of the invention solves has provided a kind of in-situ temperature proving installation and method, can be in the gas-phase deposition process the temperature of deposited material layer on Real Time Monitoring substrate or the substrate.Realization is monitored temperature and the Temperature Distribution of the deposited material layer on substrate or the substrate, thereby solve or improve the homogeneity of substrate in the epitaxy technique process or epitaxial loayer temperature, improve the thickness of deposited material layer and the uniformity coefficient of component, alleviate or eliminate the problem of the buckling deformation of substrate and deposited material layer.
For addressing the above problem, the embodiment of the invention provides a kind of in-situ temperature proving installation, is used in the gas-phase deposition process temperature of the deposited material layer on substrate or the substrate being tested, and comprising:
Light source is positioned at the substrate below, and described light source is for generation of wide spectral signal, and described wide spectral signal is used for shining the lower surface of described substrate;
Wide spectral signal acquiring unit is used for the wide spectral signal that acquisition sees through described substrate or deposited material layer;
Wide spectral signal analytic unit, be used for the wide spectral signal that described wide spectral signal acquiring unit obtains is analyzed, obtain the absorption spectrum curve of this wide spectral signal, according to described absorption spectrum curve, obtain because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal, obtain corresponding substrate or the energy gap of deposited material layer according to described characteristic wavelength, according to the relation curve of energy gap and the temperature of material, determine the temperature of described substrate or deposited material layer.
Alternatively, the material of described substrate is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is a kind of or combination wherein in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, the thickness of described deposited material layer is greater than 0.2 micron, and described in-situ temperature proving installation is used for the temperature of the deposited material layer on the substrate is tested.
Alternatively, also comprise:
Heating base, described heating base is used for placing described substrate, utilize described heating base as described light source, the wavelength coverage of the wide spectral signal that described heating base sends is 300 nanometers～10 micron, and black light, visible light or near infrared light in the described wide spectrum letter are partly analyzed.
Alternatively, described in-situ temperature proving installation is installed in the vapor deposition apparatus, described vapor deposition apparatus has processing chamber, have heating base and heating unit in the described processing chamber, described heating unit is positioned at the below of heating base, when carrying out gas-phase deposition, described heating unit heats described heating base, thereby so that described heating base can produce wide spectral signal;
Described wide spectral signal acquiring unit is positioned at the top of described substrate and deposited material layer, described wide spectral signal acquiring unit comprises optical detection device, beam splitter, light transmission component and lens combination, described lens combination is used for collecting the wide spectral signal that sees through described substrate or deposited material layer, described light transmission component is used for the wide spectral signal that described lens combination is collected is transferred to described beam splitter, described beam splitter is used for described wide spectral signal is launched, and described optical detection device is used for the wide spectral signal after the described expansion is converted to electric signal.
Alternatively, described vapor deposition apparatus is MOCVD equipment, and described wide spectral signal analytic unit comprises:
The spectral signal data acquisition unit is used for gathering described electric signal;
The energy gap of material and temperature relation storage unit are used for the energy gap of material stored and the relation curve of temperature, and described relation curve is corresponding with the material of substrate or deposited material layer;
The electric signal analytic unit is used for the electric signal that described wide spectral signal data acquisition unit provides is analyzed, and determines the absorption spectrum curve of described wide spectral signal;
The characteristic wavelength extraction unit is used for described absorption spectrum curve is analyzed, and obtains because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal;
Temperature determining unit is used for obtaining corresponding substrate or the energy gap of deposited material layer according to described characteristic wavelength, and according to the relation curve of energy gap and the temperature of described material, obtains the temperature of the deposited material layer on described substrate or the substrate.
Correspondingly, the embodiment of the invention also provides a kind of in-situ temperature method of testing, is used in the gas-phase deposition process temperature of substrate or deposited material layer being tested, and comprising:
Light source is provided, and described light source is used for sending wide spectral signal, and described wide spectral signal is used for shining the lower surface of described substrate;
Obtain the wide spectral signal that sees through described substrate or deposited material layer;
The described wide spectral signal that sees through the deposited material layer on described substrate or the substrate is analyzed, obtain the absorption spectrum curve of this wide spectral signal, according to described absorption spectrum curve, obtain because described substrate or deposited material layer absorb the characteristic of correspondence wavelength to the forbidden band of wide spectral signal; According to the relation curve of energy gap and the temperature of material layer, determine the temperature of described substrate or deposited material layer.
Alternatively, the material of described substrate is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is a kind of or combination wherein in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, and the thickness of described deposited material layer is greater than 0.2 micron.
Alternatively, obtaining the wide spectral signal that sees through described substrate or deposited material layer comprises:
Utilize lens combination to obtain to see through the wide spectral signal of described substrate or deposited material layer;
Utilize light transmission component that the wide spectral signal that described lens combination obtains is sent to beam splitter;
Utilize beam splitter that the wide spectral signal that described light transmission component obtains is carried out spectral evolution;
Utilize the light signal after optical detection device will launch to be converted to electric signal.
Alternatively, the described wide spectral signal that sees through the deposited material layer on described substrate or the substrate is analyzed, is determined that the temperature of described substrate or deposited material layer comprises:
Described electric signal is analyzed, obtained because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal;
Determine energy gap according to described characteristic wavelength;
The relation curve of energy gap and the temperature of described material is provided, and described relation curve is corresponding with the material of described substrate or deposited material layer;
According to described relation curve and the described energy gap of determining according to characteristic wavelength, determine the temperature of described substrate or deposited material layer.
Alternatively, described in-situ temperature method of testing is used for MOCVD equipment, and described MOCVD equipment has heating base, and described heating base is used for placing substrate and sends wide spectral signal.
Correspondingly, the embodiment of the invention also provides a kind of in-situ temperature proving installation, is used in the gas-phase deposition process temperature of substrate or deposited material layer being tested, and comprising:
Light source is positioned at the substrate top, and described light source is for generation of light signal, and described light signal is radiated at the upper surface of substrate or deposited material layer;
The reflected signal acquiring unit is for the reflected light signal that obtains described substrate or deposited material layer surface;
The reflected signal analytic unit, be used for the reflected light signal that described reflected signal acquiring unit obtains is analyzed, obtain the reflectance spectrum curve of this reflected light signal, according to described reflectance spectrum curve, obtain because substrate or deposited material layer to absorbing corresponding characteristic wavelength with the forbidden band in the reflected light signal, obtain corresponding substrate or the energy gap of deposited material layer according to described characteristic wavelength; According to the relation curve of energy gap and the temperature of material, determine the temperature of described substrate or deposited material layer.
Alternatively, the material of described substrate is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is gallium nitride, a kind of or combination wherein in gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, the thickness of described deposited material layer is greater than 0.2 micron, and described in-situ temperature proving installation is used for the deposited material layer temperature on the substrate is tested.
Alternatively, also comprise:
The wavelength coverage of the reflected light signal that described light source sends is 300～800 nanometers.
Alternatively, described in-situ temperature proving installation is installed in the vapor deposition apparatus, described vapor deposition apparatus has processing chamber, have heating base and heating unit in the described processing chamber, described heating unit is positioned at the below of heating base, when carrying out gas-phase deposition, described heating unit heats described heating base;
Described reflected signal acquiring unit is positioned at described substrate top, described reflected signal acquiring unit comprises optical detection device, beam splitter, light transmission component and lens combination, described lens combination is used for collecting the reflected light signal on the deposited material layer surface on described substrate surface or the substrate, the reflected light signal that described light transmission component is used for described lens combination collection transfers to described beam splitter, described beam splitter is used for described reflected light signal is launched, and the reflected light signal after described optical detection device is used for launching is converted to electric signal.
Alternatively, described vapor deposition apparatus is MOCVD equipment, and described reflected signal analytic unit comprises:
The spectral signal data acquisition unit is used for gathering described electric signal;
The energy gap of material and temperature relation storage unit are used for the energy gap of material stored and the relation curve of temperature, and described relation curve is corresponding with material on substrate or the substrate;
The electric signal analytic unit is used for the electric signal that described spectral signal data acquisition unit provides is analyzed, and obtains the reflectance spectrum curve;
The characteristic wavelength extraction unit is used for described reflectance spectrum curve is analyzed, and obtains because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band in the wide spectral light signal;
Temperature determining unit is used for determining energy gap according to described characteristic wavelength, according to the relation curve of energy gap and the temperature of described substrate or deposited material layer, obtains the temperature of described substrate or deposited material layer.
Correspondingly, the present invention also provides a kind of in-situ temperature method of testing, is used in the extension deposition process temperature of the deposited material layer on substrate or the substrate being tested, and comprising:
Light source is provided, and described light source is for generation of light signal, described light signal be radiated at substrate/or substrate on the upper surface of deposited material layer;
Obtain the reflected light signal on described substrate or deposited material layer surface;
The reflected light signal that described reflected signal acquiring unit obtains is analyzed, obtained this reflected light signal reflectance spectrum curve; According to described reflectance spectrum curve, obtain to obtain corresponding substrate or the energy gap of deposited material layer because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of reflected light signal according to described characteristic wavelength; The relation curve of energy gap and the temperature of material layer is provided; According to relation curve and the described energy gap that obtains according to described characteristic wavelength, determine the described substrate corresponding with described reflected signal or the temperature of deposited material layer.
Alternatively, the material of described substrate is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is a kind of or combination wherein in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, and the thickness of described deposited material layer is greater than 0.2 micron.
Alternatively, obtaining described reflected light signal comprises:
Utilize lens combination to obtain the reflected light signal of substrate or deposited material layer;
Utilize light transmission component that the reflected light signal that described lens combination obtains is sent to beam splitter;
Utilize beam splitter that the reflected light signal that described light transmission component obtains is carried out spectral evolution;
Utilize the signal after optical detection device will launch to be converted to electric signal.
Alternatively, the reflected light signal of the described end or deposited material layer is analyzed, is determined that the temperature of described substrate or deposited material layer comprises:
Described electric signal is analyzed, obtain since substrate or deposited material layer to absorbing corresponding characteristic wavelength with the forbidden band in the reflected light signal;
Determine energy gap according to described characteristic wavelength;
The relation curve of energy gap and the temperature of material is provided;
According to described relation curve and the described energy gap that obtains according to described characteristic wavelength, obtain the described substrate corresponding with described reflected light signal or the temperature of deposited material layer.
Compared with prior art, the embodiment of the invention has the following advantages:
Deposited material layer on substrate or the substrate is seen through the in-situ temperature proving installation that the embodiment of the invention provides or the light signal of reflection is analyzed, thus the absorption spectrum curve corresponding with the deposited material layer on described substrate or the substrate/or the reflectance spectrum curve; By to described absorption spectrum curve/or reflectance spectrum tracing analysis, can obtain with described substrate or substrate on deposited material layer because the forbidden band absorbs corresponding energy gap, based on the energy gap of material and the relation curve between the energy gap, determine the temperature corresponding with the energy gap of deposited material layer on substrate or the substrate, thereby utilize the in-situ temperature proving installation of the embodiment of the invention can accurately monitor substrate temperature, improve the quality of the deposited material layer that forms and the uniformity coefficient of thickness and component, thereby can alleviate or eliminate the problem of the buckling deformation of deposited material layer.
Description of drawings
Fig. 1 is the device structure synoptic diagram of the MOCVD of prior art;
Fig. 2 is the structural representation of the in-situ temperature proving installation of one embodiment of the invention;
Fig. 3 is the in-situ temperature method of testing schematic flow sheet of one embodiment of the invention;
Fig. 4 is the structural representation of the in-situ temperature proving installation of further embodiment of this invention;
Fig. 5 is the in-situ temperature method of testing schematic flow sheet of further embodiment of this invention.
Embodiment
Gas-phase deposition is higher to the temperature of the deposited material layer on substrate or the substrate, the temperature of the deposited material layer on substrate or the substrate need to satisfy the requirement of gas-phase deposition, reach the source material and carry out the needed temperature of chemical reaction, and the temperature of the deposited material layer on substrate or the substrate also needs to satisfy certain uniformity coefficient, guarantee the even thickness of the final deposited material layer that forms, and prevent substrate or the buckling deformation owing to inhomogeneous thermal stress.Therefore, when in the processing chamber of MOCVD equipment, carrying out gas-phase deposition, no matter be also not form deposited material layer on the initialization phase substrate or in the gas-phase deposition process, deposited a part of deposited material layer on the substrate, all need the temperature of the deposited material layer that formed on substrate or the substrate is carried out Real Time Monitoring, and the as a result needs according to monitoring are adjusted the temperature control modules of the processing chamber of MOCVD equipment in good time, satisfy the needs of gas-phase deposition.Prior art is just because of the temperature on substrate in the effective Real Time Monitoring gas-phase deposition process or the substrate, thus cause the in uneven thickness of the final deposited material layer that forms on the substrate and/or in the deposition materials layer deposition process or the deposited material layer deposition find that there is serious buckling deformation in substrate after finishing.
Particularly, the method for the temperature of the deposited material layer on prior art measurement substrate or the substrate has two kinds.(a kind of for utilizing thermopair (the Thermal couple through calibration (calibration), TC) measure, please in conjunction with Fig. 1, because pedestal 12 rotates with certain speed, therefore, prior art usually with the installation of TC below pedestal 12, keep certain spacing between the lower surface of thermopair and pedestal 12, so that pedestal 12 can normal rotation.Just because of having certain distance between thermopair and the pedestal 12, pedestal 12 has certain thickness, this is so that the substrate 121 on thermopair and the pedestal 12 directly contacts, and the temperature of thermocouple assay is the temperature of pedestal 12 belows, rather than the temperature of substrate 121.The method that the another kind of prior art is measured substrate temperature is: utilize spectral analysis device, one section in the thermal radiation signal that pedestal 12 is sent is carried out spectral analysis, for example be to be that the infrared signal of 905～940 nanometers is carried out spectral analysis to thermal radiation signal medium wavelength scope, intensity according to described infrared signal, determine the temperature of the infrared signal corresponding with this intensity, with this temperature as substrate temperature.But for the transparent substrates material, what in fact this kind method tested is the temperature of pedestal 12, and is not the temperature of substrate itself, so the actual temperature of the temperature that obtains of this kind method and substrate larger deviation again.
Therefore, the accurate temperature on test substrate surface of prior art.
In order to address the above problem, the embodiment of the invention proposes a kind of in-situ temperature proving installation, be used for the substrate placed on the pedestal or the temperature of the deposited material layer on the substrate are tested, utilize the comparatively exactly temperature of test substrate of this in-situ temperature proving installation, thereby be conducive to the temperature of the deposited material layer on substrate or the substrate is carried out Real Time Monitoring.
Particularly, the structural representation in conjunction with the in-situ temperature proving installation of one embodiment of the invention shown in Figure 2 comprises:
Wide spectral signal acquiring unit 22 is used for the wide spectral signal that acquisition sees through described substrate 21 or deposited material layer;
Wide spectral signal analytic unit 23, be used for the wide spectral signal that described wide spectral signal acquiring unit 23 obtains is analyzed, obtain the absorption spectrum curve of this wide spectral signal, according to described absorption spectrum curve, obtain because substrate 21 or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal, obtain corresponding substrate 21 or the energy gap of deposited material layer according to described characteristic wavelength, according to the relation curve of energy gap and the temperature of material, determine the temperature of described substrate 21 or deposited material layer.
The inventor considers that when the heating unit of existing MOCVD equipment heated pedestal, pedestal was because the intensification of being heated can be sent wide spectral signal.The wavelength coverage of described wide spectral signal is from hundreds of nanometer to tens micron even micron up to a hundred.When this wide spectral signal sees through deposited material layer on substrate or the substrate, can be absorbed by the deposited material layer on substrate or the substrate.Wide spectral signal after the absorption of deposited material layer on substrate or the substrate is analyzed, can be obtained the absorption spectrum corresponding with this substrate or deposited material layer.Can obtain the energy gap corresponding with this substrate or deposited material layer according to this absorption spectrum.For substrate or the deposited material layer of a certain material, its energy gap becomes the near-linear relation with temperature.After obtaining the energy gap corresponding with the deposited material layer of described substrate or substrate, in conjunction with described near-linear relation, can determine substrate temperature.
The material of the described substrate of the embodiment of the invention is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is a kind of or combination wherein in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, the thickness of described deposited material layer is greater than 0.2 micron, and described in-situ temperature proving installation is used for the deposited material layer temperature on the substrate is tested.
Substrate of the present invention has relative upper surface and lower surface, described upper surface refers to the surface of a side that is formed with deposited material layer of substrate, described lower surface refers to and the surface away from upper surface one side of substrate that the lower surface of common described substrate contacts with pedestal.
As an embodiment, the material of described substrate is sapphire.Described deposited material layer can be single layer structure, can be sandwich construction.When described deposited material layer was single layer structure, its material can be gallium nitride, and when described deposited material layer was sandwich construction, it can be two buffer layer and the luminescent layer between cushion (being called again multiple quantum well active layer).Described two buffer layer is for having respectively the gallium nitride layer of N-type and P-type conduction type.Described luminescent layer can be for containing the gallium nitride layer of In.
Need to prove, in the incipient stage of epitaxial deposition process, also do not form deposited material layer on the substrate, will monitor substrate temperature this moment, usually needs test to see through the wide spectral signal of substrate, and along with the carrying out of epitaxial deposition process, the deposited material layer of forming section gradually on the substrate, described wide spectral signal can see through the deposited material layer on substrate and the substrate, at this moment, then needs to monitor the temperature of the deposited material layer that has formed on the substrate.And, for the situation that needs to form the plane SH wave material layer on the substrate, luminescent layer is more much higher to the susceptibility of temperature than cushion to the susceptibility of temperature, therefore, after those skilled in the art can form at the ground floor cushion on the substrate, the temperature on Real Time Monitoring luminescent layer surface in the deposition process of luminescent layer.
If those skilled in the art need to monitor the temperature that the ground floor cushion forms, then the thickness of the ground floor cushion on the substrate (being a part of deposited material layer that has formed on the substrate) is greater than after 0.2 micron, its test result can be more accurate, because when the thickness of the ground floor cushion on the substrate during less than or equal to 0.2 micron, the thickness of the first cushion is less, its absorption to wide spectral signal is less, is subject to easily substrate to the impact of the absorption of wide spectral signal.And when the thickness of the first cushion on the substrate during greater than 0.2 micron, deposited material layer strengthens the degree of absorption of wide spectral signal, it is not easy to be subject to substrate to the impact of the absorption of wide spectral signal, thereby according to deposited material layer wide spectral signal is absorbed obvious different to the absorption spectrum of wide spectral signal of the absorption spectrum that produces and substrate, the in-situ temperature proving installation can be distinguished both, and can obtain the absorption of the wide spectral signal of deposited material layer, thereby guarantee the accuracy of the temperature signal of acquisition.Therefore, in optional embodiment of the present invention, only the temperature of the deposited material layer on the substrate is tested.Further, the thickness of deposited material layer that can be on substrate is tested the temperature of the deposited material layer on the substrate during greater than 0.2 micron.
The described wide spectral signal of the embodiment of the invention, the light signal that refers to have the longer wavelength scope, described longer wavelength scope is wavelength from hundreds of nanometer to tens micron, for example wavelength is the light signal of 300 nanometers～10 micron.
The in-situ temperature proving installation of the embodiment of the invention is generally used for vapor deposition apparatus.Described vapor deposition apparatus can be MOCVD equipment etc.Described MOCVD equipment has processing chamber, and the inside of its processing chamber is provided with heating unit, and this heating unit top has pedestal, and this pedestal is used for placing substrate.Described heating unit can be fluorescent tube, RF well heater etc., the heating of described heating unit so that the temperature of pedestal raise, thereby this pedestal can send wide spectral signal, thereby can utilize pedestal as light source.Need not like this to arrange specially light source, simplify the layout structure of processing chamber, save the cost of MOCVD equipment.Certainly, in other embodiment, if do not consider the layout of cost and the processing chamber of MOCVD equipment, also can light source be set additionally in the MOCVD processing chamber, utilize this light source to produce wide spectral signal.Although the wavelength of described wide spectral signal is longer, in order to accelerate analysis speed and to improve the precision of analyzing, as optional embodiment, the in-situ temperature proving installation of the embodiment of the invention only can partly be analyzed the visible light in the wide spectral signal, black light or near infrared light.Described black light is to be the approaching light of wavelength ratio of wavelength and ultraviolet light, and described near infrared light is the light that the wavelength ratio of wavelength and infrared light approaches.
As optional embodiment, the described wide spectral signal acquiring unit of the embodiment of the invention comprises:
Described wide spectral signal acquiring unit comprises optical detection device, beam splitter, light transmission component and lens combination, described lens combination is used for collecting the wide spectral signal that sees through described substrate or deposited material layer, described light transmission component is used for the signal that described lens combination is collected is transferred to described beam splitter, described beam splitter is used for described wide spectral signal is launched, and described optical detection device is used for the wide spectral signal after the described expansion is converted to electric signal.
As one embodiment of the present of invention, described wide spectral signal analytic unit comprises:
The spectral signal data acquisition unit is used for gathering the electric signal that described wide spectral signal acquiring unit provides;
The energy gap of material and temperature relation storage unit are used for the energy gap of material stored and the relation curve of thermometer, and described relation curve is corresponding with the material of substrate or deposited material layer;
The electric signal analytic unit is used for the electric signal that described wide spectral signal data acquisition unit provides is analyzed, and determines the absorption spectrum curve of described wide spectral signal;
The characteristic wavelength extraction unit is used for described absorption spectrum curve is analyzed, and obtains because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal;
Temperature determining unit is used for obtaining corresponding substrate or deposited material layer according to described characteristic wavelength and determines energy gap, and according to the relation curve of energy gap and the temperature of described material, obtains the temperature of the deposited material layer on described substrate or the substrate.
Correspondingly, the present invention also provides the in-situ temperature that utilizes described in-situ temperature proving installation method of testing, and described method temperature to the deposited material layer on substrate or the substrate in the extension deposition process is carried out Real Time Monitoring.Please in conjunction with in-situ temperature method of testing schematic flow sheet shown in Figure 3, described method comprises:
Step S1 provides light source, and described light source is used for sending wide spectral signal, and described wide spectral signal is used for shining the lower surface of described substrate;
Step S2 obtains the wide spectral signal that sees through described substrate or deposited material layer;
Step S3, the described wide spectral signal that sees through the deposited material layer on described substrate or the substrate is analyzed, obtain the absorption spectrum curve of this wide spectral signal, according to described absorption spectrum curve, obtain because described substrate or deposited material layer absorb the characteristic of correspondence wavelength to the forbidden band of wide spectral signal; According to the relation curve of energy gap and the temperature of material layer, determine the temperature of described substrate or deposited material layer.
As optional embodiment, the material of described substrate can be a kind of in sapphire, silit, ZnO, gallium arsenide, the silicon or combination wherein, the material of described deposited material layer can be a kind of in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy or combination wherein, and the thickness of described deposited material layer is greater than 0.2 micron.
As optional embodiment, obtain the wide spectral signal that sees through described substrate or deposited material layer and comprise:
Utilize lens combination to obtain the wide spectral signal of substrate or deposited material layer;
Utilize light transmission component that the wide spectral signal that described lens combination obtains is sent to beam splitter, described light transmission component can be optical fiber;
Utilize beam splitter that the wide spectral signal that described light transmission component obtains is carried out spectral evolution, described beam splitter can have for prism, spectroscope etc. the optical element of light splitting function;
Utilize the signal after optical detection device will launch to be converted to electric signal, described optical detection device can be photosensitive electronic component, should be able to be converted to corresponding electric signal according to the intensity of light signal etc.
As one embodiment of the present of invention, the described wide spectral signal that sees through described substrate or deposited material layer to be analyzed, the temperature that obtains described substrate or deposited material layer comprises:
Described electric signal is analyzed, obtained because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal;
Determine energy gap according to described characteristic wavelength;
The relation curve of energy gap and the temperature of described material is provided, and described relation curve is corresponding with the material of described substrate or deposited material layer;
According to described relation curve and the described energy gap of determining according to characteristic wavelength, determine the temperature of described substrate or deposited material layer.
In-situ temperature method of testing of the present invention is used for MOCVD equipment, and described MOCVD equipment has heating base, and described heating base is used for placing substrate and sends wide spectral signal.
The inventor considers, for the deposited material layer or substrate of a certain material, and in the certain situation of this deposited material layer or substrate temperature, the energy gap of its this material and its temperature line relationship.Last embodiment is for analyzing by the absorption spectrum to the wide spectral signal that sees through the deposited material layer on substrate or the substrate, and in another embodiment of the present invention, the absorption spectrum of reflected light signal that can also be by being radiated at the deposited material layer on substrate or the substrate is analyzed acquisition.
Particularly, the embodiment of the invention also provides a kind of in-situ temperature proving installation, is used in the extension deposition process temperature of substrate or deposited material layer being tested.Please in conjunction with the structural representation of the in-situ temperature proving installation of further embodiment of this invention shown in Figure 4, described in-situ temperature proving installation comprises:
Reflected signal acquiring unit 32 is for the reflected light signal that obtains described substrate 31 or deposited material layer surface;
Reflected signal analytic unit 33, be used for the reflected light signal that described reflected signal acquiring unit 32 obtains is analyzed, obtain the reflectance spectrum curve of this reflected light signal, according to described reflectance spectrum curve, obtain because substrate 31 or deposited material layer to absorbing corresponding characteristic wavelength with the forbidden band in the reflected light signal, obtain corresponding substrate 31 or the energy gap of deposited material layer according to described characteristic wavelength; According to the relation curve of energy gap and the temperature of material, determine the temperature of described substrate 31 or deposited material layer.
The material of the described substrate of the embodiment of the invention is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is gallium nitride, a kind of or combination wherein in gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, the thickness of described deposited material layer is greater than 0.2 micron, and described in-situ temperature proving installation is used for the deposited material layer temperature on the substrate is tested.
As an embodiment, the light signal that described light source sends is wide spectral signal.In the present embodiment, the wavelength coverage of described wide spectral signal is 300 nanometers～800 nanometers.
The described described in-situ temperature proving installation of the embodiment of the invention is installed in the vapor deposition apparatus, described vapor deposition apparatus has processing chamber, have heating base and heating unit in the described processing chamber, described heating unit is positioned at the below of heating base, when carrying out epitaxial deposition process, described heating unit heats described heating base;
Described reflected signal acquiring unit is positioned at described substrate top, described reflected signal acquiring unit comprises optical detection device, beam splitter, light transmission component and lens combination, described lens combination is used for collecting the reflected signal on the deposited material layer surface on described substrate surface or the substrate, the reflected light signal that described light transmission component is used for described lens combination collection transfers to described beam splitter, described beam splitter is used for described reflected light signal is launched, and the reflected light signal after described optical detection device is used for launching is converted to electric signal.Wherein, described beam splitter can for prism, spectroscope or other can light according to spectral evolution, the element that can carry out opto-electronic conversion that described optical detection device can be photosensitive (being that described optical detection device can be converted to the light signal that detects corresponding electric signal at least).
Vapor deposition apparatus of the present invention is MOCVD equipment, and described reflected signal analytic unit comprises:
The spectral signal data acquisition unit is used for gathering described electric signal;
The energy gap of material and temperature relation storage unit are used for the energy gap of material stored and the relation curve of temperature, and described relation curve is corresponding with material on substrate or the substrate;
The electric signal analytic unit is used for the electric signal that described spectral signal data acquisition unit provides is analyzed, and obtains the reflectance spectrum curve;
The characteristic wavelength extraction unit is used for described reflectance spectrum curve is analyzed, and obtains because substrate or deposited material layer reflect corresponding characteristic wavelength to the forbidden band of reflected signal;
Temperature determining unit is used for determining energy gap according to described characteristic wavelength, according to the relation curve of energy gap and the temperature of described substrate or deposited material layer, obtains the temperature of described substrate or deposited material layer.
Correspondingly, the present invention also provides a kind of in-situ temperature method of testing, be used in the extension deposition process temperature of the deposited material layer on substrate or the substrate being tested, please in conjunction with the schematic flow sheet of the in-situ temperature method of testing of further embodiment of this invention shown in Figure 5, comprise:
Step S1 provides light source, and described light source is for generation of light signal, described light signal be radiated at substrate/or substrate on the upper surface of deposited material layer;
Step S2 obtains the reflected light signal on described substrate or deposited material layer surface;
Step S3 analyzes the reflected light signal that described reflected signal acquiring unit obtains, and obtains this reflected light signal reflectance spectrum curve; According to described reflectance spectrum curve, obtain to obtain corresponding substrate or the energy gap of deposited material layer because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of reflected light signal according to described characteristic wavelength; The relation curve of energy gap and the temperature of material layer is provided; According to relation curve and the described energy gap that obtains according to described characteristic wavelength, determine the described substrate corresponding with described reflected signal or the temperature of deposited material layer.
The material of the described substrate of the embodiment of the invention is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is a kind of or combination wherein in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, and the thickness of described deposited material layer is greater than 0.2 micron.
As an embodiment, obtain the described reflective signal of penetrating and comprise:
Utilize lens combination to obtain the reflected light signal of substrate or deposited material layer;
Utilize light transmission component that the reflected light signal that described lens combination obtains is sent to beam splitter;
Utilize beam splitter that the reflected light signal that described light transmission component obtains is carried out spectral evolution;
Utilize the signal after optical detection device will launch to be converted to electric signal.
The described reflected light signal to the described end or deposited material layer of the embodiment of the invention is analyzed, and determines that the temperature of described substrate or deposited material layer comprises:
Described electric signal is analyzed, obtained because substrate or deposited material layer reflect corresponding characteristic wavelength to the forbidden band of reflected light signal;
Determine energy gap according to described characteristic wavelength;
The relation curve of energy gap and the temperature of material is provided;
According to described relation curve and described according to described feature, obtain the temperature according to the deposited material layer on described substrate corresponding to the definite energy gap of characteristic wavelength.
To sum up, the deposited material layer on substrate or the substrate is seen through the in-situ temperature proving installation that the embodiment of the invention provides or the light signal of reflection carries out absorption spectroanalysis, thus the absorption spectrum curve corresponding with the deposited material layer on described substrate or the substrate; By to described absorption spectrum curve analysis, can obtain the energy gap corresponding with the deposited material layer on described substrate or the substrate, based on the energy gap of material and the relation curve between the energy gap, determine the temperature corresponding with the energy gap of deposited material layer on substrate or the substrate, thereby utilize the in-situ temperature proving installation of the embodiment of the invention can accurately monitor substrate temperature, improve the quality of the deposited material layer that forms and the uniformity coefficient of thickness and component, thereby can alleviate or eliminate the problem of the buckling deformation of deposited material layer.
Although the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (19)
1. an in-situ temperature proving installation is used in the gas-phase deposition process temperature of the deposited material layer on substrate or the substrate being tested, and it is characterized in that, comprising:
Light source is positioned at the substrate below, and described light source is for generation of wide spectral signal, and described wide spectral signal is used for shining the lower surface of described substrate;
Wide spectral signal acquiring unit is used for the wide spectral signal that acquisition sees through described substrate or deposited material layer; Wide spectral signal analytic unit, be used for the wide spectral signal that described wide spectral signal acquiring unit obtains is analyzed, obtain the absorption spectrum curve of this wide spectral signal, according to described absorption spectrum curve, obtain because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal, obtain corresponding substrate or the energy gap of deposited material layer according to described characteristic wavelength, according to the relation curve of energy gap and the temperature of material, determine the temperature of described substrate or deposited material layer.
2. in-situ temperature proving installation as claimed in claim 1, it is characterized in that, the material of described substrate is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is a kind of or combination wherein in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, the thickness of described deposited material layer is greater than 0.2 micron, and described in-situ temperature proving installation is used for the temperature of the deposited material layer on the substrate is tested.
3. in-situ temperature proving installation as claimed in claim 1 is characterized in that, also comprises:
Heating base, described heating base is used for placing described substrate, utilize described heating base as described light source, the wavelength coverage of the wide spectral signal that described heating base sends is 300 nanometers～10 micron, and black light, visible light or near infrared light in the described wide spectrum letter are partly analyzed.
4. in-situ temperature proving installation as claimed in claim 3, it is characterized in that, described in-situ temperature proving installation is installed in the vapor deposition apparatus, described vapor deposition apparatus has processing chamber, have heating base and heating unit in the described processing chamber, described heating unit is positioned at the below of heating base, when carrying out gas-phase deposition, described heating unit heats described heating base, thereby so that described heating base can produce wide spectral signal;
Described wide spectral signal acquiring unit is positioned at the top of described substrate and deposited material layer, described wide spectral signal acquiring unit comprises optical detection device, beam splitter, light transmission component and lens combination, described lens combination is used for collecting the wide spectral signal that sees through described substrate or deposited material layer, described light transmission component is used for the wide spectral signal that described lens combination is collected is transferred to described beam splitter, described beam splitter is used for described wide spectral signal is launched, and described optical detection device is used for the wide spectral signal after the described expansion is converted to electric signal.
5. in-situ temperature proving installation as claimed in claim 4 is characterized in that, described vapor deposition apparatus is MOCVD equipment, and described wide spectral signal analytic unit comprises:
The spectral signal data acquisition unit is used for gathering described electric signal;
The energy gap of material and temperature relation storage unit are used for the energy gap of material stored and the relation curve of temperature, and described relation curve is corresponding with the material of substrate or deposited material layer;
The electric signal analytic unit is used for the electric signal that described wide spectral signal data acquisition unit provides is analyzed, and determines the absorption spectrum curve of described wide spectral signal;
The characteristic wavelength extraction unit is used for described absorption spectrum curve is analyzed, and obtains because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal;
Temperature determining unit is used for obtaining corresponding substrate or the energy gap of deposited material layer according to described characteristic wavelength, and according to the relation curve of energy gap and the temperature of described material, obtains the temperature of the deposited material layer on described substrate or the substrate.
6. an in-situ temperature method of testing is used in the gas-phase deposition process temperature of substrate or deposited material layer being tested, and it is characterized in that, comprising:
Light source is provided, and described light source is used for sending wide spectral signal, and described wide spectral signal is used for shining the lower surface of described substrate;
Obtain the wide spectral signal that sees through described substrate or deposited material layer;
The described wide spectral signal that sees through the deposited material layer on described substrate or the substrate is analyzed, obtain the absorption spectrum curve of this wide spectral signal, according to described absorption spectrum curve, obtain because described substrate or deposited material layer absorb the characteristic of correspondence wavelength to the forbidden band of wide spectral signal; According to the relation curve of energy gap and the temperature of material layer, determine the temperature of described substrate or deposited material layer.
7. in-situ temperature method of testing as claimed in claim 6, it is characterized in that, the material of described substrate is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is a kind of or combination wherein in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, and the thickness of described deposited material layer is greater than 0.2 micron.
8. in-situ temperature method of testing as claimed in claim 6 is characterized in that, obtains the wide spectral signal that sees through described substrate or deposited material layer and comprises:
Utilize lens combination to obtain to see through the wide spectral signal of described substrate or deposited material layer;
Utilize light transmission component that the wide spectral signal that described lens combination obtains is sent to beam splitter;
Utilize beam splitter that the wide spectral signal that described light transmission component obtains is carried out spectral evolution;
Utilize the light signal after optical detection device will launch to be converted to electric signal.
9. in-situ temperature method of testing as claimed in claim 8 is characterized in that, the described wide spectral signal that sees through the deposited material layer on described substrate or the substrate is analyzed, and determines that the temperature of described substrate or deposited material layer comprises:
Described electric signal is analyzed, obtained because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of wide spectral signal;
Determine energy gap according to described characteristic wavelength;
The relation curve of energy gap and the temperature of described material is provided, and described relation curve is corresponding with the material of described substrate or deposited material layer;
According to described relation curve and the described energy gap of determining according to characteristic wavelength, determine the temperature of described substrate or deposited material layer.
10. in-situ temperature method of testing as claimed in claim 8 is characterized in that, described in-situ temperature method of testing is used for MOCVD equipment, and described MOCVD equipment has heating base, and described heating base is used for placing substrate and sends wide spectral signal.
11. an in-situ temperature proving installation is used in the gas-phase deposition process temperature of substrate or deposited material layer being tested, and it is characterized in that, comprising:
Light source is positioned at the substrate top, and described light source is for generation of light signal, and described light signal is radiated at the upper surface of substrate or deposited material layer;
The reflected signal acquiring unit is for the reflected light signal that obtains described substrate or deposited material layer surface;
The reflected signal analytic unit, be used for the reflected light signal that described reflected signal acquiring unit obtains is analyzed, obtain the reflectance spectrum curve of this reflected light signal, according to described reflectance spectrum curve, obtain because substrate or deposited material layer to absorbing corresponding characteristic wavelength with the forbidden band in the reflected light signal, obtain corresponding substrate or the energy gap of deposited material layer according to described characteristic wavelength; According to the relation curve of energy gap and the temperature of material, determine the temperature of described substrate or deposited material layer.
12. in-situ temperature proving installation as claimed in claim 11, it is characterized in that, the material of described substrate is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is gallium nitride, a kind of or combination wherein in gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, the thickness of described deposited material layer is greater than 0.2 micron, and described in-situ temperature proving installation is used for the deposited material layer temperature on the substrate is tested.
13. in-situ temperature proving installation as claimed in claim 11 is characterized in that, also comprises:
The wavelength coverage of the reflected light signal that described light source sends is 300～800 nanometers.
14. in-situ temperature proving installation as claimed in claim 11, it is characterized in that, described in-situ temperature proving installation is installed in the vapor deposition apparatus, described vapor deposition apparatus has processing chamber, have heating base and heating unit in the described processing chamber, described heating unit is positioned at the below of heating base, and when carrying out gas-phase deposition, described heating unit heats described heating base;
Described reflected signal acquiring unit is positioned at described substrate top, described reflected signal acquiring unit comprises optical detection device, beam splitter, light transmission component and lens combination, described lens combination is used for collecting the reflected light signal on the deposited material layer surface on described substrate surface or the substrate, the reflected light signal that described light transmission component is used for described lens combination collection transfers to described beam splitter, described beam splitter is used for described reflected light signal is launched, and the reflected light signal after described optical detection device is used for launching is converted to electric signal.
15. in-situ temperature proving installation as claimed in claim 14 is characterized in that, described vapor deposition apparatus is MOCVD equipment, and described reflected signal analytic unit comprises:
The spectral signal data acquisition unit is used for gathering described electric signal;
The energy gap of material and temperature relation storage unit are used for the energy gap of material stored and the relation curve of temperature, and described relation curve is corresponding with material on substrate or the substrate;
The electric signal analytic unit is used for the electric signal that described spectral signal data acquisition unit provides is analyzed, and obtains the reflectance spectrum curve;
The characteristic wavelength extraction unit is used for described reflectance spectrum curve is analyzed, and obtains because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band in the wide spectral light signal;
Temperature determining unit is used for determining energy gap according to described characteristic wavelength, according to the relation curve of energy gap and the temperature of described substrate or deposited material layer, obtains the temperature of described substrate or deposited material layer.
16. an in-situ temperature method of testing is used in the extension deposition process temperature of the deposited material layer on substrate or the substrate being tested, and it is characterized in that, comprising:
Light source is provided, and described light source is for generation of light signal, described light signal be radiated at substrate/or substrate on the upper surface of deposited material layer;
Obtain the reflected light signal on described substrate or deposited material layer surface;
The reflected light signal that described reflected signal acquiring unit obtains is analyzed, obtained this reflected light signal reflectance spectrum curve; According to described reflectance spectrum curve, obtain to obtain corresponding substrate or the energy gap of deposited material layer because substrate or deposited material layer absorb corresponding characteristic wavelength to the forbidden band of reflected light signal according to described characteristic wavelength; The relation curve of energy gap and the temperature of material layer is provided; According to relation curve and the described energy gap that obtains according to described characteristic wavelength, determine the described substrate corresponding with described reflected signal or the temperature of deposited material layer.
17. in-situ temperature method of testing as claimed in claim 16, it is characterized in that, the material of described substrate is a kind of or combination wherein in sapphire, silit, ZnO, gallium arsenide, the silicon, the material of described deposited material layer is a kind of or combination wherein in gallium nitride, gallium aluminum arsenide, gallium arsenide, silicon, indium phosphide, indium aluminum gallium phosphide, the aluminium gallium nitrogen alloy, and the thickness of described deposited material layer is greater than 0.2 micron.
18. in-situ temperature method of testing as claimed in claim 16 is characterized in that, obtains described reflected light signal and comprises:
Utilize lens combination to obtain the reflected light signal of substrate or deposited material layer;
Utilize light transmission component that the reflected light signal that described lens combination obtains is sent to beam splitter;
Utilize beam splitter that the reflected light signal that described light transmission component obtains is carried out spectral evolution;
Utilize the signal after optical detection device will launch to be converted to electric signal.
19. in-situ temperature method of testing as claimed in claim 18 is characterized in that, the reflected light signal of the described end or deposited material layer is analyzed, and determines that the temperature of described substrate or deposited material layer comprises:
Described electric signal is analyzed, obtain since substrate or deposited material layer to absorbing corresponding characteristic wavelength with the forbidden band in the reflected light signal;
Determine energy gap according to described characteristic wavelength;
The relation curve of energy gap and the temperature of material is provided;
According to described relation curve and the described energy gap that obtains according to described characteristic wavelength, obtain the described substrate corresponding with described reflected light signal or the temperature of deposited material layer.
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