CN102786024A - Packaging structure with micro-electromechanical element and manufacturing method thereof - Google Patents
Packaging structure with micro-electromechanical element and manufacturing method thereof Download PDFInfo
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- CN102786024A CN102786024A CN2011101802720A CN201110180272A CN102786024A CN 102786024 A CN102786024 A CN 102786024A CN 2011101802720 A CN2011101802720 A CN 2011101802720A CN 201110180272 A CN201110180272 A CN 201110180272A CN 102786024 A CN102786024 A CN 102786024A
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- electric component
- microcomputer electric
- encapsulating structure
- insulating barrier
- plate body
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- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 238000004806 packaging method and process Methods 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims description 37
- 239000004020 conductor Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 28
- 238000007789 sealing Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000000428 dust Substances 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
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- 239000010703 silicon Substances 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000149 penetrating effect Effects 0.000 abstract 1
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/098—Arrangements not provided for in groups B81B2207/092 - B81B2207/097
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/05—Aligning components to be assembled
- B81C2203/052—Passive alignment, i.e. using only structural arrangements or thermodynamic forces without an internal or external apparatus
- B81C2203/054—Passive alignment, i.e. using only structural arrangements or thermodynamic forces without an internal or external apparatus using structural alignment aids, e.g. spacers, interposers, male/female parts, rods or balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
A package structure with micro electro mechanical element and its manufacturing method, the package structure with micro electro mechanical element includes a wafer, a plate, a transparent body, a package layer, a bonding wire and a metal wire, the wafer has a plurality of micro electro mechanical elements, a plurality of electrical contacts and a plurality of second alignment keys, the plate is covered on the micro electro mechanical element and is hermetically packaged, the transparent body is correspondingly arranged on each second alignment key, the package layer is arranged on the wafer and covers the plate, the electrical contacts and the transparent body, the bonding wire is embedded in the package layer, one end of each bonding wire is connected with the electrical contact, and the other end is exposed out of the top surface of the package layer, the metal wire is arranged on the package layer and is electrically connected to the electrical contact by the bonding wire. The packaging structure of the invention does not need to make an opening penetrating through the silicon substrate, thereby saving the production cost.
Description
Technical field
The present invention relates to a kind of encapsulating structure and method for making thereof, refer to a kind of encapsulating structure and method for making thereof of tool microcomputer electric component especially.
Background technology
MEMS (Micro Electro Mechanical System; Be called for short MEMS) be a kind of small device that has electronics and mechanical function concurrently, on making, be to reach, in general by various Micrometer-Nanometer Processing Technologies; MEMS is through being arranged at microcomputer electric component on the surface of substrate; And carry out packaging protection with protective cover or primer, so that inner microcomputer electric component does not receive the destruction of external environment, and obtain the encapsulating structure of a tool microcomputer electric component.
See also Fig. 1, it is the cutaway view of the encapsulating structure of existing tool microcomputer electric component.As shown in the figure; The encapsulating structure of existing tool microcomputer electric component will be through will for example placing planar lattice array (land grid array for the microcomputer electric component 11 of pressure sensing element connects; Abbreviation LGA) on the substrate 10 of kenel; And utilize the routing mode to be electrically connected to the electricity connection end 101 of this LGA substrate 10 from the electricity connection end 111 of microcomputer electric component 11, and this microcomputer electric component 11 and substrate 10 are electrically connected, finally form crown cap 12 again in base plate for packaging 10 surfaces; So that this microcomputer electric component 11 is coated on wherein; And this crown cap 12 is not destroyed by the pollution of external environment in order to protect this microcomputer electric component 11, and the shortcoming of this microcomputer electric component encapsulating structure is that volume is excessive, can't meet the compact demand of end product.
See also Fig. 2; In order to dwindle the overall package structural volume of the micro electronmechanical pressure sensing element of tool; Industry is again in the publication case (publication number is US 2006/0185429) of application one wafer scale pressure-sensing encapsulating structure in 2005; This encapsulating structure is through will be for example for the microcomputer electric component 11 of pressure sensing element directly is made on the silicon substrate 13, and is last and by anodic bonding (anodic bonding) junction of glass lid 14 on this microcomputer electric component 11.
Yet; In this silicon substrate 13, form the through hole 132 on sensing cavity 131 and 13 liang of surfaces of perforation silicon substrate; Therefore need to use silicon perforation (Through Silicon Via is called for short TSV) technology, and should technology through use potassium hydroxide (KOH) as etchant to form through hole or groove.
Compared to aforementioned first kind of prior art structure; Though the overall volume that the structure that No. 2006/0185429 the publication case is disclosed can significantly be dwindled the encapsulating structure of tool microcomputer electric component; But the processing procedure that forms through hole and groove with the TSV technology not only costs an arm and a leg, and technological precision requirement is also high, so the microcomputer electric component encapsulating structure is made with wafer process; Though can obtain the less packaging part of size, this technical sophistication and expend cost very the hard iron.
Therefore, how to avoid above-mentioned variety of problems of the prior art, so that the manufacturing cost of the encapsulating structure of tool microcomputer electric component and volume reduce the real problem of desiring most ardently solution at present that become.
Summary of the invention
Because the disappearance of above-mentioned prior art, main purpose of the present invention is to provide a kind of encapsulating structure and method for making thereof of tool microcomputer electric component, need not to make the perforate of through-silicon substrate, to save production cost.
The encapsulating structure of tool microcomputer electric component provided by the present invention comprises: have the wafer on relative the 3rd surface with the 4th surface, have a plurality of microcomputer electric components, a plurality of electrical contact and a plurality of second contraposition key on the 3rd surface; Be used for protecting the plate body of this microcomputer electric component; The plate body opening that it has opposite first and second surface and runs through this first surface and second surface; Have on this first surface a plurality of grooves, with the corresponding respectively a plurality of sealing rings of this groove periphery that are positioned at; This plate body combines with this wafer, and its combination goes up with level Hermetic Package for the sealing articulating of this plate body places the 3rd surface of this wafer, and respectively this microcomputer electric component correspondence is located at respectively in this groove and sealing ring; Respectively this electrical contact and the second contraposition key expose to this plate body opening, and are formed with metal level on this second surface; A plurality of transparent bodies are located at respectively with correspondence on this second contraposition key by adhesive agent, and making can be in observing this second contraposition key by the top; Encapsulated layer is formed on the 3rd surface of this wafer, and coats this plate body, electrical contact and the transparent body; A plurality of bonding wires are embedded in this encapsulated layer, and respectively an end of this bonding wire connects this electrical contact, and the other end exposes to the end face of this encapsulated layer; And as the plain conductor of re-distribution layer, be formed on this encapsulated layer, and this plain conductor by this bonding wire to be electrically connected to this electrical contact.
The present invention also discloses a kind of method for making of encapsulating structure of tool microcomputer electric component; Comprise: the plate body and that preparation one has opposite first and second surface has the wafer on relative the 3rd surface with the 4th surface; Have on this first surface a plurality of grooves, a plurality of first contraposition key, with the corresponding respectively a plurality of sealing rings of this groove periphery that are positioned at, have a plurality of microcomputer electric components, a plurality of electrical contact and a plurality of second contraposition key on the 3rd surface; This plate body is combined with this wafer; Its combination is that this first contraposition key corresponds to respectively this second contraposition key by inciting somebody to action respectively; And place the 3rd surface of this wafer to go up reaching level Hermetic Package the sealing articulating of this plate body, and respectively this microcomputer electric component correspondence is located at respectively in this groove and sealing ring; The plate body that removes segment thickness from this second surface is to reduce the final packaging thickness of structure; On this second surface, form metal level and connect use for follow-up bonding wire; Cut this plate body, expose the plate body opening of these electrical contacts and these second contraposition keys with formation; A plurality of transparent body correspondences are located at respectively on this second contraposition key, this transparent body can let this second contraposition key observed by the top by adhesive agent; Connect this electrical contact and this metal level with a plurality of bonding wires; The formation encapsulated layer is gone up on the 3rd surface in this wafer, to coat this plate body, electrical contact, the transparent body and bonding wire; Remove this encapsulated layer and this bonding wire of part of segment thickness from the end face of this encapsulated layer, supply this second contraposition key to outside with an end that exposes this bonding wire, and the end face of this encapsulated layer is higher than the end face of this transparent body; Remove this encapsulated layer on this transparent body end face, cover sight line to avoid this encapsulated layer; And come contraposition by this second contraposition key, and on this encapsulated layer, form plain conductor, this plain conductor is to be electrically connected to this electrical contact by this bonding wire.
By on can know that the encapsulating structure of tool microcomputer electric component of the present invention need not to make the perforate (TSV) of through-silicon substrate, run through the perforate specialized apparatus so need not buy to make, and can reduce production costs; In addition, plate body of the present invention only is covered with this microcomputer electric component, but not covers at this bonding wire top, and removes this bonding wire of part, so more can reduce integral thickness and volume; Encapsulating structure of the present invention again can see through this transparent body and watch this second contraposition key from the top when making; And required positioning step can directly form this plain conductor or circuit rerouting layer (RDL) with the aligner that generally has the function of overlooking the time; Therefore and do not need to form extra contraposition key in this wafer bottom surface; With as the follow-up use that on packaging body, forms the contraposition key of plain conductor or circuit rerouting layer; And can be reduced by at least exposure, development and etch process once, and need not acquisition price expensive double-sided alignment appearance, so can save the overall process cost and shorten the processing procedure time.
Description of drawings
Fig. 1 is a kind of cutaway view of encapsulating structure of existing tool microcomputer electric component;
Fig. 2 is the cutaway view of the encapsulating structure of another kind of existing tool microcomputer electric component; And
Fig. 3 A to Fig. 3 K is the encapsulating structure of tool microcomputer electric component of the present invention and the cutaway view of method for making thereof, and wherein, Fig. 3 E ' is the schematic top plan view of Fig. 3 E, and Fig. 3 J ' is another embodiment of Fig. 3 J.
The main element symbol description
10 substrates
101,111 electricity connection ends
11,41 microcomputer electric components
12 crown caps
13 silicon substrates
131 sensing cavitys
132 through holes
14 cover glass
30 plate bodys
The 30a first surface
The 30b second surface
300 grooves
301 plate body openings
31 first contraposition keys
32 sealing rings
33 metal levels
40 wafers
40a the 3rd surface
40b the 4th surface
42 electrical contacts
43 second contraposition keys
44 bonding wires
51 adhesive agents
52 transparent bodies
53 encapsulated layers
54 plain conductors
55 soldered balls
56 first insulating barriers
560 first insulating barrier openings
57 second insulating barriers
570 second insulating barrier openings
58 projection lower metal layers
6 encapsulating structures.
The specific embodiment
Below by particular specific embodiment embodiment of the present invention is described, those of ordinary skill in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.
Notice; The appended graphic structure that illustrates of this specification, ratio, size etc.;,, be not all in order to limit the enforceable qualifications of the present invention for those of ordinary skill in the art's understanding and reading only in order to cooperate the content that specification disclosed; Event is the technical essential meaning of tool not; The adjustment of the modification of any structure, the change of proportionate relationship or size not influencing under effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously; Quoted in this specification as " on ", " left side ", " right side ", " top ", " end " reach terms such as " one "; Also be merely to be convenient to narrate and understand, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment; Under no essence change technology contents, also ought be regarded as the enforceable category of the present invention.
See also Fig. 3 A to Fig. 3 K, it is the encapsulating structure of tool microcomputer electric component of the present invention and the cutaway view of method for making thereof, and wherein, Fig. 3 E ' is the schematic top plan view of Fig. 3 E, and Fig. 3 J ' is another embodiment of Fig. 3 J.
At first; Shown in Fig. 3 A; Preparation one has the plate body 30 of opposite first 30a and second surface 30b; Have a plurality of first contraposition keys 31 on this first surface 30a, the material of this plate body 30 can be siliceous base material, and forms a plurality of grooves 300 by for example dark reactive ion etch (DRIE), potassium hydroxide (KOH) or tetramethyl ammonium hydroxide (TMAH) with etching.
Shown in Fig. 3 B; In these groove 300 periphery correspondences respectively sealing ring 32 is set, the material of sealing ring 32 can be glass dust (glass frit), epoxy resin (epoxy), dry film (dry film), gold (Au), copper (Cu), golden indium (AuIn), scolder (solder), germanium (Ge), germanium aluminium (AlGe) or SiGe (SiGe).
Shown in Fig. 3 C; Provide one to have the 3rd relative surperficial 40a and the wafer 40 of the 4th surperficial 40b; Have a plurality of microcomputer electric component 41, a plurality of electrical contact 42 and a plurality of second contraposition keys 43 on the 3rd surperficial 40a, then, this plate body 30 is combined with this wafer 40; Its combination is for this first contraposition key 31 corresponds to respectively this second contraposition key 43 by inciting somebody to action respectively; And the sealing ring 32 of this plate body 30 connect on the 3rd surperficial 40a that places this wafer 40, and respectively these microcomputer electric component 41 correspondences are located at respectively in this groove 300 and sealing ring 32, wherein; This microcomputer electric component 41 can be gyroscope, accelerometer or radio-frequency micro electromechanical element, and this moment this microcomputer electric component 41 by level Hermetic Package in this groove 300.
Shown in Fig. 3 D; The plate body 30 that can lapping mode removes segment thickness from this second surface 30b; And remaining about 200 to 300 microns plate bodys 30 that (μ m) is thick; And utilize sputter or vapor deposition mode to go up formation metal level 33 in this second surface 30b, the material of this metal level 33 can be aluminium/copper (Al/Cu) (promptly forming aluminium lamination and copper layer in regular turn).
Shown in figure 3E; Cut this plate body 30; Expose the plate body opening 301 of these electrical contacts 42 and these second contraposition keys 43 with formation, utilize solid brilliant machine (die bonder) then a plurality of transparent body 52 correspondences are located at respectively on this second contraposition key 43, wherein by adhesive agent 51; The material of this adhesive agent 51 can be glass dust (glass frit), epoxy resin (epoxy) or dry film (dry film), and the material of this transparent body 52 can be glass.
Shown in Fig. 3 E '; The quantity of these transparent bodies 52 is preferably two; And the arbitrarily relative both sides of the peripheral region that places this wafer 40 respectively; Be noted that Fig. 3 E ' just will be clear that the position (being the position of the second contraposition key 43 equally) of expressing these transparent bodies 52, therefore do not show the member of all Fig. 3 E.
Shown in Fig. 3 F, connect this electrical contact 42 and this metal level 33 with a plurality of bonding wires 44.
Shown in Fig. 3 G, go up formation encapsulated layer 53 in the 3rd surperficial 40a of this wafer 40, to coat this plate body 30, electrical contact 42, the transparent body 52 and bonding wire 44.
Shown in Fig. 3 H; End face by lapping mode from this encapsulated layer 53 removes this encapsulated layer 53 and this bonding wire 44 of part of segment thickness; Exposing an end of this bonding wire 44, and the end face of this encapsulated layer 53 is ground to the end face of this transparent body 52 a little more than the end face of this transparent body 52 if this is; Then can cause this transparent body end face to be fuzzy cloudy surface and light tight, and can't carry out the contraposition of follow-up contraposition board because of grinding.
Shown in Fig. 3 I, to remove this encapsulated layer 53 on these transparent body 52 end faces, so then this transparent body end face will be transparence by the laser burn mode.
Shown in Fig. 3 J, come contraposition by this second contraposition key 43, and on this encapsulated layer 53, form plain conductor 54, this plain conductor 54 be by this bonding wire 44 to be electrically connected to this electrical contact 42, on this plain conductor 54, form soldered ball 55 again.
Perhaps, shown in Fig. 3 J ', on this encapsulated layer 53, form first insulating barrier 56; This first insulating barrier 56 has a plurality of first insulating barrier openings 560 that expose this bonding wire 44; And this plain conductor 54 is formed at this first insulating barrier opening 560 and sentences this bonding wire 44 of electric connection, then, on this first insulating barrier 56 and plain conductor 54, forms second insulating barrier 57; And this second insulating barrier 57 has the second insulating barrier opening 570 of this plain conductor 54 of a plurality of exposed parts; And in this second insulating barrier opening, 570 places form projection lower metal layer 58 and on soldered ball 55, just carry out circuit rerouting (Redistribution Line is called for short RDL) processing procedure; And reach circuit electric connection pad diffusion (Fan out) or in gather (Fan in) demand, to meet the needs of product design.
Shown in Fig. 3 K, it is to continue from Fig. 3 J, cuts single processing procedure, with the encapsulating structure 6 that obtains a plurality of each tool microcomputer electric component.
The present invention also discloses a kind of encapsulating structure of tool microcomputer electric component, comprising: wafer 40, have the 3rd relative surperficial 40a and the 4th surperficial 40b, and have a plurality of microcomputer electric component 41, a plurality of electrical contact 42 and a plurality of second contraposition keys 43 on the 3rd surperficial 40a; Plate body 30; Have opposite first 30a and second surface 30b and run through this first surface 30a and the plate body opening 301 of second surface 30b; Have on this first surface 30a a plurality of groove 300, with the corresponding respectively a plurality of sealing rings 32 of these groove 300 peripheries that are positioned at; This plate body 30 combines with this wafer 40, and its combination connects on the 3rd surperficial 40a that places this wafer 40 for the sealing ring 32 of this plate body 30, and respectively these microcomputer electric component 41 correspondences are located at respectively in this groove 300 and sealing ring 32; Respectively this electrical contact 42 and the second contraposition key 43 expose to this plate body opening 301, and are formed with metal level 33 on this second surface 30b; A plurality of transparent bodies 52 are located at respectively with correspondence on this second contraposition key 43 by adhesive agent 51; Encapsulated layer 53 is formed on the 3rd surperficial 40a of this wafer 40, and coat this plate body 30, electrical contact 42, with the transparent body 52; A plurality of bonding wires 44 are embedded in this encapsulated layer 53, and respectively an end of this bonding wire 44 connects this electrical contact 42, and the other end exposes to the end face of this encapsulated layer 53; And plain conductor 54, be formed on this encapsulated layer 53, and this plain conductor 54 by this bonding wire 44 to be electrically connected to this electrical contact 42.
In the encapsulating structure of described tool microcomputer electric component; Also can comprise first insulating barrier 56; Be formed on this encapsulated layer 53, this first insulating barrier 56 has a plurality of first insulating barrier openings 560 that expose this bonding wire 44, and this plain conductor 54 is formed at this first insulating barrier opening 560 and sentences and electrically connect this bonding wire 44; In addition; Also can comprise second insulating barrier 57, be formed on this first insulating barrier 56 and the plain conductor 54 that this second insulating barrier 57 has the second insulating barrier opening 570 of this plain conductor 54 of a plurality of exposed parts.
In the encapsulating structure of above-mentioned tool microcomputer electric component, also can comprise soldered ball 55, be located on this plain conductor 54.
In aforesaid encapsulating structure, the material of sealing ring 32 can be glass dust (glass frit), epoxy resin (epoxy), dry film (dry film), gold (Au), copper (Cu), golden indium (AuIn), scolder (solder), germanium (Ge), germanium aluminium (AlGe) or SiGe (SiGe) again.
In the encapsulating structure of described tool microcomputer electric component, the material of this metal level 33 can be aluminium/copper (Al/Cu), and the material of this transparent body 52 can be glass.
In the encapsulating structure of described tool microcomputer electric component, this microcomputer electric component 41 can be gyroscope, accelerometer or radio-frequency micro electromechanical element, and the material of this adhesive agent 51 can be glass dust (glass frit), epoxy resin (epoxy) or dry film (dry film).
In sum, the encapsulating structure of tool microcomputer electric component of the present invention need not to make the perforate (TSV) of through-silicon substrate, uses equipment so need not to buy the TSV making, and can reduce production costs; In addition, plate body of the present invention only is covered with this microcomputer electric component, and removes this bonding wire of part, so more can reduce integral thickness and volume; Encapsulating structure of the present invention again can see through this transparent body and watch this second contraposition key from the top when making; And required contraposition step can directly form this plain conductor or rerouting line layer (RDL) with general aligner (aligner) time; Therefore and do not need to form extra contraposition key in this wafer bottom surface; With as the follow-up use that on packaging body, forms the contraposition key of plain conductor or rerouting line layer; And can be reduced by at least fabrication steps such as single exposure, development and etching, and need not acquisition price expensive double-sided alignment appearance (double side aligner), so can save the overall process cost and shorten the processing procedure time.
The foregoing description is only in order to illustrative principle of the present invention and effect thereof, but not is used to limit the present invention.Any those of ordinary skill in the art all can make amendment to the foregoing description under spirit of the present invention and category.So rights protection scope of the present invention, should be listed like claims.
Claims (20)
1. the encapsulating structure of a tool microcomputer electric component, it comprises:
Wafer has the 3rd relative surface and the 4th surface, has a plurality of microcomputer electric components, a plurality of electrical contact and a plurality of second contraposition key on the 3rd surface;
Plate body; Have opposite first and second surface and run through the plate body opening of this first surface and second surface; Have on this first surface a plurality of grooves, with the corresponding respectively a plurality of sealing rings of this groove periphery that are positioned at; This plate body combines with this wafer, and its combination places on the 3rd surface of this wafer for the sealing articulating of this plate body, and respectively this microcomputer electric component correspondence is located at respectively in this groove and sealing ring; Respectively this electrical contact and the second contraposition key expose to this plate body opening, and are formed with metal level on this second surface;
A plurality of transparent bodies are located at respectively with correspondence on this second contraposition key by adhesive agent;
Encapsulated layer is formed on the 3rd surface of this wafer, and coats this plate body, electrical contact and the transparent body;
A plurality of bonding wires are embedded in this encapsulated layer, and respectively an end of this bonding wire connects this electrical contact, and the other end exposes to the end face of this encapsulated layer; And
Plain conductor is formed on this encapsulated layer, and this plain conductor by this bonding wire to be electrically connected to this electrical contact.
2. the encapsulating structure of tool microcomputer electric component according to claim 1; Also comprise first insulating barrier; Be formed on this encapsulated layer, this first insulating barrier has a plurality of first insulating barrier openings that expose this bonding wire, and this plain conductor is formed at this first insulating barrier opening part to electrically connect this bonding wire.
3. the encapsulating structure of tool microcomputer electric component according to claim 2 also comprises second insulating barrier, is formed on this first insulating barrier and the plain conductor, and this second insulating barrier has the second insulating barrier opening of a plurality of these plain conductors of exposed parts.
4. according to the encapsulating structure of claim 1,2 or 3 described tool microcomputer electric components, also comprise soldered ball, be located on this plain conductor.
5. the encapsulating structure of tool microcomputer electric component according to claim 1 is characterized in that, the material of sealing ring is glass dust, epoxy resin, dry film, gold, copper, golden indium, scolder, germanium, germanium aluminium or SiGe.
6. the encapsulating structure of tool microcomputer electric component according to claim 1 is characterized in that, the material of this metal level is aluminium/copper.
7. the encapsulating structure of tool microcomputer electric component according to claim 1 is characterized in that, the material of this transparent body is a glass.
8. the encapsulating structure of tool microcomputer electric component according to claim 1 is characterized in that, the material of this adhesive agent is glass dust, epoxy resin or dry film.
9. the encapsulating structure of tool microcomputer electric component according to claim 1 is characterized in that, this microcomputer electric component is gyroscope, accelerometer or radio-frequency micro electromechanical element.
10. the method for making of the encapsulating structure of a tool microcomputer electric component, it comprises:
The plate body and one that preparation one has opposite first and second surface has the wafer on relative the 3rd surface with the 4th surface; Have on this first surface a plurality of grooves, a plurality of first contraposition key, with the corresponding respectively a plurality of sealing rings of this groove periphery that are positioned at, have a plurality of microcomputer electric components, a plurality of electrical contact and a plurality of second contraposition key on the 3rd surface;
This plate body is combined with this wafer; Its combination is for this first contraposition key corresponds to respectively this second contraposition key by inciting somebody to action respectively; And the sealing articulating of this plate body placed on the 3rd surface of this wafer, and respectively this microcomputer electric component correspondence is located at respectively in this groove and sealing ring;
Remove the plate body of segment thickness from this second surface;
On this second surface, form metal level;
Cut this plate body, expose the plate body opening of these electrical contacts and these second contraposition keys with formation;
By adhesive agent a plurality of transparent body correspondences are located at respectively on this second contraposition key;
Connect this electrical contact and this metal level with a plurality of bonding wires;
The formation encapsulated layer is gone up on the 3rd surface in this wafer, to coat this plate body, electrical contact, the transparent body and bonding wire;
Remove this encapsulated layer and this bonding wire of part of segment thickness from the end face of this encapsulated layer, exposing an end of this bonding wire, and the end face of this encapsulated layer is higher than the end face of this transparent body;
Remove this encapsulated layer on this transparent body end face; And
Come contraposition by this second contraposition key, and on this encapsulated layer, form a plurality of plain conductors, this plain conductor by this bonding wire to be electrically connected to this electrical contact.
11. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 10; Also be included in and form before this plain conductor; On this encapsulated layer, form first insulating barrier; This first insulating barrier has a plurality of first insulating barrier openings that expose this bonding wire, and this plain conductor is formed at this first insulating barrier opening part to electrically connect this bonding wire.
12. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 11 also is included in and forms second insulating barrier on this first insulating barrier and the plain conductor, and this second insulating barrier has the second insulating barrier opening of a plurality of these plain conductors of exposed parts.
13., after forming this plain conductor, also be included on this plain conductor and form soldered ball according to the method for making of the encapsulating structure of claim 10,11 or 12 described tool microcomputer electric components.
Etching produces 14. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 10 is characterized in that, these grooves are by dark reactive ion etch, potassium hydroxide or tetramethyl ammonium hydroxide.
15. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 10 is characterized in that, the material of sealing ring is glass dust, epoxy resin, dry film, gold, copper, golden indium, scolder, germanium, germanium aluminium or SiGe.
16. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 10 is characterized in that, the material of this metal level is aluminium/copper.
17. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 10 is characterized in that, the material of this transparent body is a glass.
18. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 10 is characterized in that, the material of this adhesive agent is glass dust, epoxy resin or dry film.
19. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 10 is characterized in that, this microcomputer electric component is gyroscope, accelerometer or radio-frequency micro electromechanical element.
20. the method for making of the encapsulating structure of tool microcomputer electric component according to claim 10 also comprises and cuts single processing procedure, to obtain the encapsulating structure of a plurality of each tool microcomputer electric component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100117007 | 2011-05-16 | ||
| TW100117007A TWI409885B (en) | 2011-05-16 | 2011-05-16 | Package structure having micromechanical element and method of making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102786024A true CN102786024A (en) | 2012-11-21 |
| CN102786024B CN102786024B (en) | 2015-05-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110180272.0A Active CN102786024B (en) | 2011-05-16 | 2011-06-24 | Packaging structure with micro-electromechanical element and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8399940B2 (en) |
| CN (1) | CN102786024B (en) |
| TW (1) | TWI409885B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20120292722A1 (en) | 2012-11-22 |
| TW201248742A (en) | 2012-12-01 |
| US8399940B2 (en) | 2013-03-19 |
| CN102786024B (en) | 2015-05-20 |
| TWI409885B (en) | 2013-09-21 |
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