CN102668060A - Mounting table structure and processing apparatus - Google Patents
Mounting table structure and processing apparatus Download PDFInfo
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- CN102668060A CN102668060A CN2010800555698A CN201080055569A CN102668060A CN 102668060 A CN102668060 A CN 102668060A CN 2010800555698 A CN2010800555698 A CN 2010800555698A CN 201080055569 A CN201080055569 A CN 201080055569A CN 102668060 A CN102668060 A CN 102668060A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
Disclosed is a mounting table structure which is disposed inside a processing vessel capable of being evacuated, and which is for having an object to be processed mounted thereon. The mounting table structure is provided with: a mounting table which includes a plate-shaped mounting table body that supports a heat diffusion plate on which an object to be processed is placed, and which has a gas diffusion chamber disposed in a boundary portion between the mounting table body and the heat diffusion plate; a heating means which is disposed in the mounting table; one or a plurality of support pipes which are erected on the bottom section of the processing vessel to support the mounting table, the upper ends of the support pipes being connected to the lower surface of the mounting table and communicating with the gas diffusion chamber so as to allow purge gas to flow; a mounting table cover member which is disposed so as to cover the side surfaces and the lower surface of the mounting table body; and a support pipe cover member which surrounds the support pipes and is linked to the mounting table cover member at the upper end section of the support pipe cover member so as to guide the purge gas, which has flowed from the gas diffusion chamber to a gap between the mounting table body and the mounting table cover member, downward to discharge the purge gas from a gas outlet.
Description
Technical field
The present invention relates to the processing unit and the mounting base structure of the handled object of semiconductor wafer etc.
Background technology
Usually, in making semiconductor integrated circuit, the handled object of semiconductor wafer etc. is repeated the various monolithic processing of film forming processing, etch processes, heat treatment, upgrading processings, crystallization processing etc., form desired integrated circuit.Under the situation of the various processing of carrying out above-mentioned that kind; Kind corresponding to this processing; In container handling, import necessary processing gas respectively; For example under the situation that film forming is handled, import film forming gas or halogen family gas, under the situation that upgrading is handled, import ozone gas etc., under the situation that crystallization is handled, import N
2The inactive gas of gas etc. or O
2Gas etc.
When being example with the processing unit of semiconductor wafer being implemented one by one heat treated one chip; Setting for example is built-in with carrying of resistance heater and puts platform in the container handling that can vacuumize; The surface is carried and is put semiconductor wafer above that; Under temperature (for example from 100 ℃ to 1000 ℃) state heated, flow through predetermined process gas, under the process conditions of regulation, wafer is implemented various heat treatment (japanese kokai publication sho 63-278322 communique, japanese kokai publication hei 07-078766 communique, japanese kokai publication hei 03-220718 communique, japanese kokai publication hei 06-260430 communique, TOHKEMY 2004-356624 communique, TOHKEMY 2006-295138 communique, TOHKEMY 2008-021963 communique) with regulation.Therefore, for the parts in the container handling, even require they for the thermal endurance of heating with expose the corrosion resistance that in handling gas, also can not be corroded to the open air.
But; Carry the mounting base structure of putting semiconductor wafer and generally have thermal endurance and corrosion resistance; And need prevent the metallic pollution of metal pollutant etc., thus for example in the ceramic material of AlN etc., imbed resistance heater as heater, and at high temperature one is fired to form to carry and is put platform.And, wait at other identical ground of operation firing ceramics materials to form pillar, and carrying of making that this one burns till put platform side and above-mentioned pillar and for example engage through thermal diffusion and melt depositedly and integrated, make mounting base structure.And, integrally formed like this mounting base structure is erected the bottom that is arranged in the container handling.In addition, substitute above-mentioned ceramic material, also use sometimes to have heat-and corrosion-resistant property and the flexible few quartz glass of heat.
At this, an example of existing mounting base structure is described.Figure 15 is the sectional view of an example of the existing mounting base structure of expression.This mounting base structure is arranged at and can carries out in the container handling of vacuum exhaust, and is shown in figure 15, has discoideus the carrying that the ceramic material by AlN etc. constitutes and puts platform 2.And the pillar cylindraceous 4 that equally for example is made up of the ceramic material of AlN etc. for example joins the central portion of the lower surface of putting platform 2 this year to through thermal diffusion and is integrated.
So both sides engage through thermal diffusion junction surface 6 airtightly.At this, put the size of platform 2 in above-mentioned year, for example under the situation of wafer size at 300mm, carrying the diameter of putting platform 2 is about 350mm, the diameter of pillar 4 is the 56mm degree.Put at above-mentioned year and for example to be provided with the heating unit 8 that constitutes by heater etc. in the platform 2, heat carrying the semiconductor wafer W as handled object of putting on the platform 2.
The bottom of above-mentioned pillar 4 is fixed on container bottom 9 through fixed block 10 and is the state of erecting.And, in above-mentioned pillar 4 cylindraceous, being provided with the feeder rod used therein 14 that its upper end is connected with above-mentioned heating unit 8 via splicing ear 12, the bottom side of this feeder rod used therein 14 connects container bottom downwards by insulating element 16 and draws to the outside.Thus, prevent to handle gas etc. and invade in this pillar 4, and prevent that above-mentioned feeder rod used therein 14 and splicing ear 12 etc. are by above-mentioned corrosive processing gas attack.
But,, carry and to put platform 2 and self become the condition of high temperature in the man-hour that adds of semiconductor wafer.In this case; It is not that so good pottery constitutes that the material that constitutes pillar 4 can be described as by pyroconductivity; Carry and to put platform 2 and engage through thermal diffusion with pillar 4, so transmit at this pillar 4, the problem that a large amount of heat is fled from from center lateral stay 4 sides of year putting platform 2 is avoided.Therefore, particularly carrying when putting the heating and cooling of platform 2, with respect to the temperature step-down that carries the central part of putting platform 2; The cold spot that produces; The temperature of periphery uprises relatively, in carrying the surface of putting platform 2, produces bigger temperature difference, its result; Have carrying between the central part put platform 2 and the periphery and produce bigger thermal stress, carry and put platform 2 and produce damaged problem.
Particularly, also exist with ... the kind of technology, but reach more than 800 ℃ because of carrying the temperature put platform 2, so that the said temperature difference becomes is quite big, accompanying therewith produces bigger thermal stress.In addition, in addition, have because of carrying the problem that the breakage based on above-mentioned thermal stress that the heating and cooling repeatedly put platform cause is promoted.
In addition; Carrying the top of putting platform 2 and pillar 4 becomes the condition of high temperature and produces thermal expansion, and on the other hand, the bottom of pillar 4 is fixed on container bottom 9 through fixed block 10; Concentrating on the junction of carrying the top of putting platform 2 and pillar 4 so have stress, is that starting point produces damaged problem with this part.
In order to address the above problem a little; Shown in TOHKEMY 2008-021963 communique; Motion has following technology: heating board is accommodated in to form in the heating board accommodating container to carry puts platform; And between it, have certain metallic seal parts etc. of high-temperature heat-resistance property, connect this heating board accommodating container and cylinder-shaped pillar through pin or the bolt member pine loose ground that constitutes by ceramic material etc.In this case, in order to prevent that for example handling gas invades in the heating board accommodating container via the small gap that remains in linking part etc., so via in the heating board accommodating container, supplying with purge gas in the above-mentioned pillar.But; At this moment; The processing gas of the film forming gas in the container handling etc. also immerses inevitable via above-mentioned small gap adverse current in the heating board accommodating container; Its result exists in the situation that the rear side of putting platform forms the unwanted film of the inhomogeneities of heat distribution in the face that causes wafer of carrying.
Summary of the invention
The problem that solves is wanted in invention
The present invention is conceived to above this problem points, produces for it is solved effectively.The purpose of this invention is to provide a kind of mounting base structure and processing unit; It can prevent to put platform and produce bigger thermal stress carrying; Can prevent this year to put platform self breakage; And the unwanted film that can prevent to become the reason of temperature non in the face of handled object is attached to carrying the rear side of putting platform.
Mounting base structure of the present invention; Be arranged at and carry out in the container handling of exhaust; Be used for carrying and put the handled object that should handle, said mounting base structure is characterised in that, comprising: carry and put platform; Put platform main body upper support and be used for carrying the thermal diffusion plate of putting said handled object tabular carrying, and the interface branch of putting platform main body and said thermal diffusion plate at said year is provided with gas diffusion chamber; Be arranged at the heating unit of putting platform in said year; One or more supporting tube is used to support and put platform in said year, erects setting from the bottom of said container handling, and its upper end is connected with the lower surface of putting platform in said year, and is communicated with said gas diffusion chamber, flows through purge gas; Carry and to put the platform cap assembly, it is provided with to cover the side of putting the platform main body in said year and the mode of lower surface; With the supporting tube cap assembly; Its surround said supporting tube around; And upper end and put the platform cap assembly in said year and link; From said gas diffusion chamber downwards directed flow spend said year and put the platform main body and put the said purge gas in the gap between the platform cap assembly in said year, said purge gas is discharged from gas vent.
According to the present invention; In being arranged at the container handling that can carry out exhaust and be used for carrying the mounting base structure put the handled object that to handle; Be used for carrying the thermal diffusion plate of putting handled object carrying the upper support put the platform main body; And carrying the platform of year putting that the interface branch put platform main body and thermal diffusion plate is provided with gas diffusion chamber; Be provided with for support put platform this year and the upper end with carry that the lower surface put platform is connected and be communicated with one or more supporting tube that makes flow of sweep gas with gas diffusion chamber, and be provided with to carry and put the platform cap assembly to cover the mode of carrying the side of putting the platform main body and lower surface, and be provided with surround supporting tube on every side and upper end and year put the binding of platform cap assembly; And will put the platform main body and carry that the purge gas of putting the Clearance Flow between the platform cap assembly guides downwards and supporting tube cap assembly that it is discharged from gas vent carrying from gas diffusion chamber; So compare with the pillar of existing structure, the area that carries the junction surface of putting platform and supporting tube reduces, correspondingly; The minimizing of becoming separated in flight of heat can suppress the generation of cold spot.So, prevent to put the problem that platform produces big thermal stress carrying, prevent this year to put platform self and produce damaged problem.
And; In order to prevent that handling gas invades to carrying to put in the platform; Put the platform cap assembly and flow in the supporting tube cap assembly via carrying through making with carrying the gap of putting between the platform main body to the purge gas of the indoor supply of gaseous diffusion, and from the gas vent discharge of the below of this supporting tube cap assembly, thus; Immerse from this gas vent adverse current even handle gas, this processings gas also not can] arrive and year put platform.So inhibition causes that the uneven unwanted film of the interior Temperature Distribution of face of handled object is attached to the problem of carrying the rear side of putting platform.
In addition, the present invention is the processing unit that is used for handled object is implemented processing, it is characterized in that, comprising: the container handling that can carry out exhaust; Has the mounting base structure that is used for carrying the said characteristic of putting said handled object; Gas feed unit with supply gas in said container handling.
Description of drawings
Fig. 1 is the cross section structure figure of processing unit that expression has the mounting base structure of an embodiment of the invention.
Fig. 2 is the vertical view that expression is arranged at an example that carries the heating unit of putting platform.
Fig. 3 is that the A-A of Fig. 1 is to sectional view.
Fig. 4 takes out the local amplification sectional view of representing with the part of one one supporting tube of the mounting base structure of Fig. 1 with representing.
Fig. 5 is the key diagram of assembled state that is used for the mounting base structure of key diagram 4.
Fig. 6 is the local amplification sectional view that flows of the purge gas in the expression mounting base structure.
Fig. 7 A is the figure of cap assembly of first variant embodiment of expression mounting base structure of the present invention.
Fig. 7 B is the figure of cap assembly of first variant embodiment of expression mounting base structure of the present invention.
Fig. 8 A put the figure of the part of platform in employed year in second variant embodiment of expression processing unit of the present invention.
Fig. 8 B put the figure of the part of platform in employed year in second variant embodiment of expression processing unit of the present invention.
Fig. 9 is the figure of mounting structure of the upper end of expression thermocouple.
Figure 10 is the partial enlarged drawing of the variant embodiment of expression thermocouple.
Figure 11 A is the enlarged drawing of the spring portion of expression thermocouple.
Figure 11 B is the enlarged drawing of the spring portion of expression thermocouple.
Figure 12 A is the figure of bolt of the bolt member of expression first variant embodiment of concluding the unit.
Figure 12 B is the figure of bolt of the bolt member of expression first variant embodiment of concluding the unit.
Figure 13 is the sectional view of installment state that second variant embodiment of unit is concluded in expression.
Figure 14 A is the figure that second variant embodiment of unit is concluded in expression.
Figure 14 B is the figure that second variant embodiment of unit is concluded in expression.
Figure 15 is the sectional view of an example of the existing mounting base structure of expression.
Embodiment
Below, based on accompanying drawing, a preferred forms of mounting base structure of the present invention and processing unit is detailed.
Fig. 1 is the cross section structure figure of processing unit that expression has the mounting base structure of an embodiment of the invention.Fig. 2 is the vertical view that expression is arranged at an example that carries the heating unit of putting platform.Fig. 3 is that the A-A of Fig. 1 is to sectional view.Fig. 4 takes out the local amplification sectional view of representing with the part of one one supporting tube of the mounting base structure of Fig. 1 with representing.Fig. 5 is the key diagram of assembled state that is used for the mounting base structure of key diagram 4.Fig. 6 is the local amplification sectional view that flows of the purge gas in the expression mounting base structure.At this, describe as example with the situation of using plasma to carry out the film forming processing.Wherein, below " the function barred body " of explanation not merely is 1 metal bar, also comprises having flexual distribution, covering a plurality of distributions and be combined into 1 and form bar-shaped parts etc. with insulating material.
As shown in the figure, the container handling 22 of the aluminum cylindraceous that the inside that this processing unit 20 has a cross section for example is made up of big footpath and path.Top in this container handling 22 is provided with spray head 24 by insulating barrier 26, and this spray head 24 is for being used to import the gas feed unit of necessary processing gas, for example film forming gas.The a plurality of gas jetting hole 32A that are provided with from the gas blowing face 28 at the lower surface of spray head 24,32B are towards handling space S inject process gas.When carrying out Cement Composite Treated by Plasma, these spray head 24 double as are upper electrode.
In spray head 24, be formed with the 30A of gas diffusion chamber, the 30B that is divided into 2 hollow forms.Import the processing gas here,, spray from each gas jetting hole 32A, the 32B that is communicated with each 30A of gas diffusion chamber, 30B respectively after the in-plane diffusion.Particularly, gas jetting hole 32A, 32B are configured to rectangular.The integral body of spray head 24 is for example formed by nickel alloy, aluminium or the aluminium alloy of nickel or the anti-corrosion Langaloy of haas troy (registered trade mark) etc.In addition, even, at least in the stage of present patent application, from the present invention, do not get rid of having only under the situation of a gas diffusion chamber as spray head 24 yet.
For example be provided with at the junction surface of this spray head 24 and the insulating barrier 26 of the open upper end portion of container handling 22 and wait the seal member 34 that constitutes, keep the air-tightness in the container handling 22 by O shape ring.And the high frequency electric source 38 that this spray head 24 is used via matching circuit 36 and the plasma of for example 13.56MHz is connected, and can produce plasma in case of necessity.This frequency is not limited to above-mentioned 13.56MHz.
In addition, in the sidewall of container handling 22 is provided with this container handling 22 relatively, move into to take out of and move into mouthfuls 40, and take out of at this and to move into mouthfuls 40 and be provided with the family of power and influence 42 that can open and close airtightly as taking out of of the semiconductor wafer W of handled object.And the central portion of the bottom 44 of container handling 22 is shaped with the recessed mode that becomes convex of downward direction, is formed with gas exhaust space 43 at this.Thus, as stated, what served as reasons greatly directly in the inside in the cross section of the integral body in the container handling 22 and path constitutes is cylindric.
And, be provided with exhaust outlet 46 in the bottom of the sidewall in the division gas exhaust space 43 of container handling 22.This exhaust outlet 46 is connected with the gas extraction system 48 that is used for carrying out exhaust in the container handling 22, for example vacuumizing.This gas extraction system 48 has the exhaust channel 49 that is connected with exhaust outlet 46, on this exhaust channel 49, is disposed with pressure-regulating valve 50 and vacuum pump 52, can container handling 22 be maintained desired pressure.In addition, based on processing mode, sometimes also with being set in the container handling 22 near atmospheric pressure.
The bottom 44A in the division gas exhaust space 43 in container handling 22 is provided with the mounting base structure 54 as characteristic of the present invention with the mode that erects from it.Particularly, this mounting base structure 54 mainly has: be used for uploading at upper surface and put carrying of handled object and put platform 58; Be used for one or more supporting tube 60 that platform 58 is put in a carrying with carrying to put that platform 58 is connected and to erect from the bottom of container handling 22; Cover to carry and to put carrying of platform 58 and put platform cap assembly 63; With the supporting tube cap assembly 65 on every side that surrounds supporting tube 60.At this, supporting tube 60 is provided with a plurality of, in whole supporting tube 60, inserts logical function barred body 62.
In Fig. 1,, record each supporting tube 60 alignment arrangements on transverse direction in order to understand invention easily.Particularly, carry and put platform 58 integral body and constitute by dielectric.At this, carry and to put platform 58 and comprise: put platform main body 59 by carrying of constituting of thick and transparent quartz; Be arranged at carry the upper surface side put platform main body 59 by with the thermal diffusion plate 61 that carries the ceramic material formation of putting the different opaque dielectric of platform main body 59, for example waiting as the aluminium nitride (AlN) of thermal endurance material.
And, put in the platform main body 59 carrying, for example be provided with heating unit 64 with the mode of imbedding.In addition, in thermal diffusion plate 61, be provided with dual-purpose electrode 66 with the mode of imbedding.And, to upload at the upper surface of thermal diffusion plate 61 and to put wafer W, this wafer W is heated by thermal diffusion plate 61 through the radiant heat from heating unit 64.
In addition, as stated, dual-purpose electrode 66 is arranged in the opaque thermal diffusion plate 61.This dual-purpose electrode 66 for example is made up of the conductor lines that forms mesh, and the splicing ear of this dual-purpose electrode 66 is positioned at and carries the central part of putting platform 58.At this, dual-purpose electrode 66 is double to be: the chuck electrode of electrostatic chuck (sucker) usefulness; With the high frequency electrode that becomes the lower electrode that is used to apply RF power.
And, as the feeder rod used therein that heater 68 and dual-purpose electrode 66 are supplied power with measure the contact rod of the thermocouple of temperature, be provided with said function barred body 62.These each function barred bodies 62 are inserted and are led in the thin supporting tube 60.
At first, also as shown in figures 1 and 3, at this, 6 supporting tubes 60 are provided with to concentrate on the mode of carrying the central part of putting platform 58.Each supporting tube 60 is made up of dielectric, particularly, by with carry put the identical dielectric substance of platform main body 59 for example quartz constitute.Each supporting tube 60 for example applies the mode that forms as one airtightly and carries the lower surface engages of putting platform main body 59 through hot melt.So, be formed with hot melt in the upper end of each supporting tube 60 and apply junction surface 60A (with reference to Fig. 4).And, in each supporting tube 60, insert and be connected with function barred body 62.In Fig. 4, as stated, the supporting tube 60 of a representative expression part, a supporting tube 60 therein is interior like the said two root functionality barred bodies 62 of having taken in back.
Particularly, with respect to regional heater 68A of interior week, slotting independently respectively the leading in the supporting tube 60 of heating installation power supply rod 70,72 that introducing is used and electric power is exported two root functionality barred bodies 62 of usefulness as electric power.The upper end of each heating installation power supply rod 70,72 is electrically connected with regional heater 68A of interior week.
In addition, with respect to outer regions heater 68B, slotting independently respectively the leading in the supporting tube 60 of heating installation power supply rod 74,76 that introducing is used and electric power is exported two root functionality barred bodies 62 of usefulness as electric power.The upper end of each heating installation power supply rod 74,76 is electrically connected (with reference to Fig. 1) with outer regions heater 68B.Each heating installation power supply rod 70～76 for example has formations such as nickel alloy.
In addition, with respect to dual-purpose electrode 66, dual-purpose feeder rod used therein 78 is inserted as function barred body 62 and is led in the supporting tube 60.The upper end of dual-purpose feeder rod used therein 78 is electrically connected with dual-purpose electrode 66 via splicing ear 78A (with reference to Fig. 4).Dual-purpose feeder rod used therein 78 for example is made up of nickel alloy, tungsten alloy, molybdenum alloy etc.
In addition, in a remaining supporting tube 60, insert to be common to measure and carry the temperature of putting platform 58, as two thermocouples 80,81 of function barred body 62.And the interior all zones that each measuring junction 80A of thermocouple 80,81,81A lay respectively at thermal diffusion plate 61 and the lower surface of outer regions detect each regional temperature.As thermocouple 80,81, for example can use the thermocouple of sheath type.The thermocouple of this sheath type; Inside at protection metal pipe (sheath) is inserted with the thermocouple bare wire; And the powder-tight filling of the inorganic insulation thing through highly purified magnesia etc.; Insulating properties, air-tightness, responsiveness are good, in hot environment or various pernicious atmosphere for a long time continuously use also bring into play outstanding durability.
In this case, Fig. 4 as shown in, carry the part of putting platform main body 59 what splicing ear 78A and thermocouple 80,81 passed through, be formed with through hole 84,86 respectively, and carry the upper surface of putting platform main body 59 and be communicated with each through hole 84,86.In Fig. 4,, record heating installation power supply rod 70, dual-purpose feeder rod used therein 78 and two thermocouples 80,81 as function barred body 62 with representing.
And, at this, be formed with discoideus gas diffusion chamber 88 carrying the interface branch put platform main body 59 and thermal diffusion plate 61.Particularly; Be positioned at the lower surface periphery of comparing with the outer circumference end of thermal diffusion plate 61 a little in the inner part; Be provided with the butt teat 89 of the outstanding ring-type of direction downwards, the top end face of this butt teat 89 (lower surface) is put the upper surface butt of platform main body 59 with carrying.Thus, the inboard of butt teat 89 forms recess, and the part of this recess forms gas diffusion chamber 88.At this, butt teat 89 not only is arranged at thermal diffusion plate 61, also can be arranged to carry to put platform main body 59 1 sides, perhaps also can be arranged at both sides.Under the situation of carrying the wafer W of putting diameter 300mm, carrying the diameter of putting platform 58 is that the width of butt teat 89 is about 10mm about about 340mm.Gas diffusion chamber 88 is communicated with the supporting tube 60 of inserting logical dual-purpose feeder rod used therein 78 via through hole 84, and is of the back, can be to supplying with purge gas in the gas diffusion chamber 88.
In addition, the bottom 44 of container handling 22 for example is made up of stainless steel, and is also as shown in Figure 4, is formed with conductor outlet 90 at the central portion of the bottom 44A that divides gas exhaust space 43.For example be installed with the installed base 92 that constitutes by stainless steel etc. in the inboard of this conductor outlet 90 airtightly by the seal member 94 of O shape ring etc.
And, the pipe fixed station 96 of fixing each supporting tube 60 is installed on this installed base 92.Pipe fixed station 96 is formed with through hole 98 by with each supporting tube 60 identical materials, promptly formed by quartz at this with each supporting tube 60 accordingly.And the bottom side of each supporting tube 60 is applied through hot melt and is waited the upper surface side that is connected and fixed on pipe fixed station 96.So,, be formed with hot melt-coating part 60B at this.
In this case, slotting each supporting tube 60 that is connected with each heating installation power supply rod 70,72,74,76 is formed at the through hole 98 of managing fixed station 96 downwards slotting leading to of direction, and its bottom is sealed, and with the reduced atmosphere inclosure N is arranged in inside
2Or the inactive gas of Ar.Wherein, in Fig. 4, only represent a heating installation power supply rod 70, but other heating installation power supply rod 72～76 constitutes too.
At the periphery of the pipe fixed station 96 of the bottom of fixing each supporting tube 60, for example be provided with the fixed part 100 that constitutes by stainless steel etc. with the mode of surrounding them.This fixed part 100 is fixed to installed base 92 sides through bolt 102.
In addition, corresponding with each through hole 98 of pipe fixed station 96 on installed base 92, be formed with through hole 104, insert logical function barred body 62 respectively downwards.And, on the composition surface of the upper surface of lower surface and the installed base 92 of pipe fixed station 96, with surround each through hole 104 around mode be provided with the seal member 106 that O shape is encircled etc., improve the sealing of this part.
In addition, in the bottom of inserting each through hole 104 that is connected with dual-purpose feeder rod used therein 78 and two thermocouples 80,81, by waiting the seal member 108,110 that constitutes, be mounted with sealed plate 112,114 respectively through bolt 116,118 by O shape ring.Thus, each dual-purpose feeder rod used therein 78 connects sealed plate 112,114 airtightly with thermocouple 80,81.Sealed plate 112,114 for example is made up of stainless steel etc., with breakthrough part corresponding mode for the dual-purpose feeder rod used therein 78 of sealed plate 112, around dual-purpose feeder rod used therein 78, be provided with insulating element 120.
In addition, installed base 92 and with its bottom 44A that joins with insert the through hole 104 be connected with dual-purpose feeder rod used therein 78 and be communicated with formation purge gas road 122.Thus, can in passing through the supporting tube 60 of dual-purpose feeder rod used therein 78, supply with N
2Deng purge gas.At this, like above-mentioned mode, via gas diffusion chamber 88, through hole 84 is communicated with through hole 86, so also can substitute the supporting tube 60 of dual-purpose feeder rod used therein 78, in passing through the supporting tube 60 of two thermocouples 80,81, supplies with inactive gas.
At this, an example of the size of each several part is described.Carrying the diameter of putting platform 58, is about 340mm under the situation corresponding with 300mm (12 inches) wafer, is about 230mm under the situation of 200mm (8 inches) wafer correspondence, is about 460mm under the situation corresponding with 400mm (16 inches) wafer.In addition, the diameter of each supporting tube 60 is about 8～16mm, and the diameter of each function barred body 62 is about 4～6mm.
Return Fig. 1, thermocouple 80,81 is connected with the heater power source control part 134 that for example has computer etc.In addition; Each distribution 136,138,140,142 that is connected with each heating installation power supply rod 70,72,74,76 of heating unit 64 also is connected with heater power source control part 134; Based on the temperature of measuring through thermocouple 80,81; Can internally all regional heater 68A and outer regions heater 68B control individually respectively, keep desired temperature.
In addition; The DC power supply 146 that the distribution 144 that is connected with dual-purpose feeder rod used therein 78 is used with electrostatic chuck respectively is connected with the high frequency electric source 148 that is used to apply the RF power that bias voltage uses; Electrostatic Absorption is carried the wafer W of putting on the platform 58, and can apply RF power as bias voltage to put platform 58 as carrying of lower electrode man-hour adding.Frequency as this RF power can be used 13.56MHz, but also can use 400kHz etc. in addition, is not limited to these frequencies.
In addition; At mounting table 58 and mounting table cap assembly 63 it is formed a plurality of for example three pin inserting holes 150 (in Fig. 1, only representing two) connecting on the above-below direction, each pin inserting hole 150 dispose with trip embedding state can insert up or down lead to raise pin 152.Dispose raising of the such ceramic of circular-arc for example aluminium oxide in this lower end that raises pin 152 and encircle 154, this raises ring 154 and rides over the lower end that respectively raises pin 152.Raise arm 156 that ring 154 extends from this and link with the bar 158 that haunts that mode with the bottom 44 that connects container handling 22 is provided with, this bar 158 that haunts can rise and descend through transmission device 160.
Thus, when respectively raising pin 152 handing-over wafer W, haunt to the top from the upper end of each pin inserting hole 150.In addition, the breakthrough part in the bottom 44 of the container handling 22 of the bar 158 that haunts is provided with the bellows 162 that can stretch, and goes up and down in the air-tightness limits that the bar 158 that haunts can the limit be kept in the container handling 22.
On the other hand, put platform cap assembly 63 with carrying of cover carrying that the mode of putting platform 58 is provided with and be mainly used in the NF that removes through the unwanted films that will be attached in the container handling 22
3The clean Buchholz protection of gas etc. is carried and is put platform main body 59.Supporting tube cap assembly 65 guides to the below of each supporting tube 60 to carrying the purge gas of putting importing in the gas diffusion chamber 88 in the platform 58 the most at last.Carry and to put platform cap assembly 63 and supporting tube cap assembly 65 and constitute by ceramic material as the aluminium nitride of corrosion resistance material or aluminium oxide etc.And supporting tube cap assembly 65 is put platform cap assembly 63 and is bonded into one with carrying.
Also like Fig. 4 and shown in Figure 5; Carry put platform cap assembly 63 for its assembling easily; This concentric circles be divided into a plurality ofly, cut apart and form: cover carry the side of putting platform 58 and from carry the lower surface of putting platform 58 the perimeter sides overlay 63A of perimembranous to periphery: with the discoideus center side overlay 63B that covers the central portion that carries the lower surface of putting platform 58.In addition, this is cut apart number and is not limited to two, also can be further with the concentric shape of perimeter sides overlay 63A be divided into a plurality ofly, in addition, also can not cut apart and form integral body.And then, also can not design center side overlay 63B, with its omission.
And, be formed with engaging stage portion 170 on the interior Zhou Duanhuan shape ground of perimeter sides overlay 63A, and make the periphery butt of this engaging stage portion 170 and center side overlay 63B, it is supported.Thermal diffusion plate 61, carry to put platform main body 59 and to carry and put platform cap assembly 63 and connect to one through concluding unit 171.At this, conclude unit 171 and for example be bolt member 182.Concrete and Nie Yan, bolt member 182 has bolt 178 and nut 180.And, at thermal diffusion plate 61, carry and to put platform main body 59 and perimeter sides overlay 63A is formed with through hole 172,174,176 respectively, on these through holes 172,174,176, insert logical above-mentioned bolt 178.The top ends of above-mentioned bolt 178 forms threaded portion 178A through carrying out screw chasing, on the 178A of this threaded portion, screws togather above-mentioned nut 180, and is fixed as one.Thus, become at thermal diffusion plate 61 and carry and put between the platform cap assembly 63 clamping and carry the state of putting platform main body 59 and linking.That is, carry and put platform main body 59 and be fixed between thermal diffusion plate 61 and the perimeter sides overlay 63A with the state that is held.
The through hole 172 that is arranged at thermal diffusion plate 61 forms the stage portion shape with the mode of imbedding bolt head; Relative therewith; Carrying each through hole 174,176 put platform main body 59 and perimeter sides overlay 63A is set at than the diameter of bolt 178 and slightly greatly for example about 2～3mm, forms trip embedding state.Thus, between the inner peripheral surface of the outer peripheral face of bolt 178 and through hole 174, be formed with the purge gas that makes in the gas diffusion chamber 88 direction gap 184 (with reference to Fig. 4) of flowing downwards.
In addition, nut 180 is formed with concentric hollow bulb in inside, at this hollow bulb the elastomeric element 186 that is made up of coil spring is installed, and constitutes the nut of band elastomeric element.And; Nut 180 is pushed perimeter sides overlay 63A; On the other hand; Platform main body 59 (with reference to Fig. 4) is put by ballast in the top of elastomeric element 186, and its result can and be carried at perimeter sides overlay 63A and center side overlay 63B to put and is formed with the gap 188 that makes the purge gas that flows between the platform main body 59.
In addition; The internal diameter of side plate 63 ' that cover to carry the perimeter sides overlay 63A of the side of putting platform main body 59 is set at than carries to be put about the big several mm of diameter of platform main body 59, at this side plate 63 ' with carry and also be formed with the gap 190 that purge gas flows between the side of putting platform main body 59.And the upper end of this side plate 63 ' contacts with the lower surface of the most peripheral of thermal diffusion plate 61, forms contact site 200.In this case, produce small gap at this contact site 200 inevitably, but of the back literary composition, emit purge gas via this small gap.
Central portion at bolt 178 is formed with pin inserting hole 150, and it is in-and-out bolt 178 on above-below direction.Through making this bolt 178 insert logical through hole 172,174,176, be formed on the state that platform 58 is provided with pin inserting hole 150 of putting that carries.In addition, also can be pin inserting hole 150 be arranged on the bolt 178, also can be arranged on other the part of year putting platform 58 in addition separately.Bolt member 182, be the ceramic material that bolt 178 and nut 180 can use material, for example aluminium nitride or the aluminium oxide etc. of corrosion resistance.In addition, ceramics springs can be used, or under the less situation of the problem of metallic pollution, metal spring etc. can be used as elastomeric element 186.
In addition, insert logical each supporting tube 60 at center side overlay 63B, therefore formation has the supporting tube inserting hole 192 (with reference to Fig. 5) than the internal diameter about the big several mm of external diameter of this supporting tube 60.And, be supplied to the purge gas that gas diffusion chamber 88 flows via gap 184 and gap 188, via the gap between the interior week of periphery that is formed at supporting tube 60 and supporting tube inserting hole 192, in supporting tube cap assembly 65, flow.
And supporting tube cap assembly 65 forms cylindric with all modes on every side of surrounding each supporting tube 60, and its upper end engages integratedly through the deposited junction surface 194 of hot melt with the interior Zhou Duan of perimeter sides overlay 63A and carries out it is supported.This supporting tube cap assembly 65 downward directions are extended, and like Fig. 1 and shown in Figure 4, its lower end part and forms gas vent 196 at this place near the 44A of the bottom of container handling 22.And the exhaust outlet 46 that the atmosphere in the container handling 22 are carried out exhaust is positioned at the very near side of this gas vent 196, can be immediately attracts the purge gas that flows out from above-mentioned gas outlet 196 from exhaust outlet 46, and carries out exhaust.
In this case; The length L of supporting tube cap assembly 65 (with reference to Fig. 4) is set at following length: hinder at least flowing from the purge gas of its discharge; Even handle gas and clean gas, can not arrive to carry yet and put the lower surface of platform main body 59 from the diffusion of gas vent 196 adverse currents.(quantity delivered) setting is pressed in the supply that such length L also is based on pressure and purge gas in the container handling 22, but generally speaking can be set at more than the 100mm for example 130mm.
And, all actions of processing unit 20, the control of for example operation pressure, carry the temperature control of putting platform 58, the supply of handling gas and supply and stop etc., carry out through the apparatus control portion 197 that for example constitutes by computer etc.And apparatus control portion 197 has the storage medium 198 of the needed computer program of the above-mentioned action of storage.This storage medium 198 comprises floppy disk, CD (Compact Disc), hard disk or flash memory etc.
Then, the action to the processing unit that utilizes plasma 20 that constitutes with upper type describes.
At first, untreated semiconductor wafer W is remained in not shown conveying arm, and via the family of power and influence who becomes out state 42, take out of and move into mouthfuls 40, move in the container handling 22.Raise pin 152 with what this wafer W was handed off to rising, fall through making this raise pin 152, with wafer W carry put mounting base structure 54 by the upper surface that carries the thermal diffusion plate 61 of putting platform 58 of each supporting tube 60 supporting, and be supported.At this moment, apply direct voltage, electrostatic chuck is played a role, wafer W absorption is remained in to carry put on the platform 58 through be arranged at the dual-purpose electrode 66 that carries on the thermal diffusion plate 61 of putting platform 58 from 146 pairs of DC power supplys.In addition, substitute electrostatic chuck, also use the clamp structure of the periphery of pushing wafer W sometimes.
Then, flow control is carried out on the limit respectively, and various processing gas is supplied with to spray head 24 in the limit, and these gases spray from gas jetting hole 32A, 32B, imports to handling space S.And through continuing to drive the vacuum pump 52 of gas extraction system 48, the atmosphere in the container handling 22 is vacuumized, and, through the valve opening of adjustment pressure-regulating valve 50, the atmosphere of handling space S is maintained the operation pressure of regulation.At this moment, the temperature of wafer W is maintained at the technological temperature of regulation.That is,, control heating through applying voltage to constituting the regional heater 68A of interior week and the outer regions heater 68B that carry the heating unit 64 of putting platform 58 respectively from heater power source control part 134.
Its result, because from the heat of each regional heater 68A, 68B, the wafer W heating that heated up.At this moment; The lower surface central portion through being arranged at thermal diffusion plate 61 and the thermocouple 80,81 of periphery; The wafer of all zones and outer regions in coming to measure respectively (carry and put platform) temperature, and based on these measured values, heater power source control part 134 carries out temperature control through feedback to each zone.Therefore, can be so that the temperature of wafer W be controlled at the higher state of inner evenness all the time.In this case, depend on the kind of technology, for example reach about 700 ℃ but carry the temperature of putting platform 58.
In addition, when carrying out Cement Composite Treated by Plasma, through driving high frequency electric source 38, as the spray head 24 of upper electrode with as the carrying to put between the platform 58 and apply high frequency of lower electrode, handling space S generation plasma, the Cement Composite Treated by Plasma of stipulating.In addition, at this moment, be arranged at the dual-purpose electrode 66 that carries the thermal diffusion plate 61 of putting platform 58 through 148 pairs of the high frequency electric sources of using from bias voltage and apply RF power, can introduce plasma ion.
At this,, the effect of mounting base structure 54 is elaborated also with reference to Fig. 6.In addition, in Fig. 6, represent purge gas (N through arrow
2) the flow direction.Via as the heating installation power supply of function barred body 62 rod 70,72 to regional heater 68A supply capability of the interior week of heating unit, via heating installation power supply rod 74,76 to outer regions heater 68B supply capability.In addition, the temperature of carrying the central portion put platform 58 via with its measuring junction 80A with carry the thermocouple 80 that mode that the lower surface central portion of putting platform 58 joins disposes, be delivered to heater power source control part 134.
In this case, the temperature in all zones in measuring junction 80A measures.In addition, at the measuring junction 81A of the thermocouple that is disposed at periphery 81, measure the temperature of outer regions, this measured value is sent to heater power source control part 134.Like this, internally the confession of all regional heater 68A and outer regions heater 68B power supply power determines based on FEEDBACK CONTROL respectively.
And, apply the RF power that direct voltage that electrostatic chuck uses and bias voltage are used to dual-purpose electrode 66 via dual-purpose feeder rod used therein 78.And, insert individually respectively as the upper end of the heating installation power supply of function barred body 62 rod 70,72,74,76, thermocouple 80,81 and dual-purpose feeder rod used therein 78 and to lead to airtightly hot melt and be applied to and carry ( thermocouple 80,81 is inserted and led to a common supporting tube) in the thin supporting tube that carries the lower surface of putting platform main body 59 60 of putting platform 58.And simultaneously, these supporting tubes 60 are put platform 58 and itself are supported carrying with the mode that erects.
In addition, insert in each supporting tube 60 that is connected with each heating installation power supply rod 70～76, through inactive gas, for example N
2Gas is sealed with decompression state to be ended, and prevents the oxidation of heating installation power supply rod 70～76.In addition, via purge gas road 122, in inserting the supporting tube 60 that is connected with dual-purpose feeder rod used therein 78, supply with for example N
2Gas is as purge gas, this N
2Gas flows into and is formed in the gas diffusion chamber 88 of carrying the boundary part of putting platform main body 59 and thermal diffusion plate 61, and spreads towards radial direction foreign side radially therein.The part of this purge gas also flows in the supporting tube 60 of inserting logical thermocouple 80,81.
And; Carry out the major part of the purge gas of this diffusion; Via the gap 184 of the slotting general through hole 174 that is formed at the bolt 178 that carries the periphery of putting platform main body 59, flow into to be formed to carry and put in the gap 188 between platform main body 59 and perimeter sides overlay 63A and the center side overlay 63B.In addition, the part of purge gas, also inflow is formed in the gap 190 of carrying the side of putting platform main body 59.The purge gas that in gap 188, flows, and then via the gap of the supporting tube inserting hole 192 that is formed at center side overlay 63B, flow in the cylinder-shaped supporting tube cap assembly 65.
After this purge gas flows down,, get rid of to the gas exhaust space bottom in 43 in supporting tube cap assembly 65, then, vacuumize to the outer of container handling 22 from the exhaust outlet 46 that is formed at its side through the gas vent 196 that is formed at this bottom.That is, use as the gas exhaust road of the purge gas of supplying with by purge gas road 122 with supporting tube cap assembly 65.In this case; With by thermal diffusion plate 61, the pressure that carries the above-mentioned purge gas put the zone that platform cap assembly 63 and support column cap assembly 65 divide becomes the mode of the barotropic state higher than the operation pressure in the container handling 22, keeps from the purge gas road flow of 122 purge gas supplied with.
Then, under such situation, owing to carry out the processing of wafer W repeatedly, mounting table 58 repeats to heat up and cooling.And; When because such up-down of carrying the temperature of putting platform 58; For example make and carry the temperature put platform 58 when room temperature reaches 700 ℃ of left and right sides as stated, because of stretch the heat that in carrying the central part of putting platform 58, produces the distance that only has about 0.2～0.3mm of heat along radial direction flexible poor.In this case; In the situation of existing mounting base structure; Owing to engage to make through thermal diffusion and put platform and the big pillar of diameter is combined into one securely by carrying of constituting of stone ceramic material; So the so-called above-mentioned only heat about 0.2～0.3mm is flexible poor,, carries the junction surface damaged phenomenon of generation of putting platform and pillar and frequently produce owing to the thermal stress of following the flexible difference of this heat to produce repeatedly.
To this; In this execution mode; Carry that to put platform main body 59 be that about 1cm thin many combine and are supported at this supporting tube 60 for the six roots of sensation through diameter; The heat of carrying on the horizontal direction of putting platform main body 59 is flexible to be moved so these each supporting tubes 60 can be followed, and stretches so can allow the heat that carrying of above-mentioned that kind put platform main body 59.Its result does not have thermal stress to be applied to carry the problem at the junction surface put platform main body 59 and each supporting tube 60, can prevent effectively the upper end of each supporting tube 60 with carry the lower surface of putting platform main body 59, be that both linking part produces damaged problem.
In addition; Each supporting tube 60 by quartz constitutes is put the lower surface of platform main body 59 through melting to apply to be firmly bonded to carry, but as indicated above, the diameter of this supporting tube 60 is about 10mm; Less, its result can reduce from carrying and puts the heat output of platform main body 59 to each supporting tube 60.So, can reduce the heat of runing away, so correspondingly put the generation that can suppress cold spot in the platform main body 59 significantly carrying to each supporting tube 60 side.
In addition, each function barred body 62 is covered by supporting tube 60 respectively, in addition, in supporting tube 60, supplies with inactive gas as purge gas, and perhaps envelope is ended under the atmosphere of inactive gas, so there is not each function barred body 62 to be exposed to the problem of corrosive processing gas.Particularly, when the envelope under the atmosphere of employing inactive gas is ended, can prevent that function barred body 62 and splicing ear 78A etc. are oxidized.
In addition, as implied above, after purge gas spreads in gas diffusion chamber 88, flow via gap 184 and gap 188, in addition, also inflow is formed in the gap 190 of carrying the side of putting platform main body 59.So; The purge gas that is barotropic state contacts with the face of the upper surface of the side plate 63 ' of perimeter sides overlay 63A in the small gap that contact site 200 (with reference to Fig. 6) produces to go out to handling the space S side leakage from the lower surface because of the outer circumference end of thermal diffusion plate 61, so processing gas and corrosive clean gas that can prevent film forming gas etc. are invaded platform cap assembly 63 in and even the problem of immersion to carrying to put.Wherein, the surface roughness of thermal diffusion plate on the contact site 200 61 and side plate 63 ' for example is about 10 μ m.
In addition; Even part at the fastening hold-down nut 180 of bolt member 182; Sometimes also produce the small gap that is communicated with processing space S side, even but in this case, as stated; The purge gas of barotropic state spills laterally, so can prevent to handle the problem that gas and clean gas are invaded to the inside and even immersed.
In addition, from the gas vent 196 final purge gas of getting rid of of the bottom of supporting tube cap assembly 65, can not avoid handling gas and clean gas and to a certain degree invade in the supporting tube cap assembly 65 from this bigbore gas vent 196.But at this, the length L of supporting tube cap assembly 65 is set at sufficient length, puts platform main body 59 so can stop inner processing gas of intrusion and clean gas to arrive to carry.So the unwanted film that can prevent to become the main cause that causes the temperature non in the wafer face is attached to carrying the upper surface of putting platform main body 59 and lower surface etc.At this, the flow of purge gas is for example in the scope of 10～200sccm.
In addition; Thermal diffusion plate 61 is put platform main body 59 and is pushed each other through the elastomeric element 186 that is arranged at nut 180 with carrying; So compare with the situation of only concluding both through nut 180; Not only can improve the air-tightness of contact site 200 (with reference to Fig. 6) of lower surface of outer circumference end of upper surface and the thermal diffusion plate 61 of side plate 63 ', and the heat conduction of this butt teat 89 is good, the temperature that therefore can suppress the periphery of thermal diffusion plate 61 reduces.
Also have; Fastening through bolt member 182; Can prevent floating of thermal diffusion plate 61, thus the measuring junction 80A of the thermocouple 80,81 of thermal diffusion plate 61, the problem that 81A leaves from thermal diffusion plate 61 be not installed in, so can correspondingly correctly measure the temperature of this thermal diffusion plate 61.
In fact; When the film forming of implementing metal film through the processing unit 20 of setting above-mentioned mounting base structure 54 is handled; Gas vent 196 from the lower end of supporting tube cap assembly 65 cylindraceous is attached with unwanted film to the inwall that short transverse enters to the position of half degree; But handle gas and be not immersed into its above height, can confirm not and can adhere to unwanted film carrying upper surface and the lower surface of putting platform main body 59.
Like this, according to this execution mode, in being arranged at the container handling 22 that can carry out exhaust and be used for carrying the mounting base structure put the handled object that to handle; Put platform main body 59 upper supports and be used for carrying the thermal diffusion plate 61 of putting handled object carrying; And carrying of constituting put on the platform 58 carrying that the interface branch put platform main body 59 and thermal diffusion plate 61 is provided with gas diffusion chamber 88, puts platform 58 this year in order to support, and is provided with that the upper end is connected with the lower surface of year putting platform 58 and is communicated with one or more supporting tube 60 that makes flow of sweep gas with gas diffusion chamber 88; Be provided with the mode of cover carrying the side of putting platform main body 59 and lower surface and year put platform cap assembly 63; And be provided with supporting tube cap assembly 65, this supporting tube cap assembly 65 surround supporting tubes 60 around and the upper end put platform cap assembly 63 and link with carrying, guide downwards carrying from gas diffusion chamber 88 and put platform main body 59 and year put the purge gas of the Clearance Flow between the platform cap assembly 63; And it is discharged from gas vent 196; So compare with the pillar of existing structure, the area that carries the junction surface of putting platform and supporting tube is less, correspondingly; Heat flee from minimizing, can suppress the generation of cold spot.So, prevent to put the problem quilt that platform 58 produces bigger thermal stress carrying, can prevent this year to put platform self and produce damaged problem.
And; In order to prevent that handling gas invades to carrying to put in the platform 58; Through making in gas diffusion chamber 88 purge gas supplied with put platform cap assembly 63 and to carry the gap of putting between the platform main body 59 mobile supporting tube cap assembly 65 in, from gas vent 196 discharges of the below of this supporting tube cap assembly 65, thus via carrying; Immerse from these gas vent 196 adverse currents even handle gas, this processing gas can not arrive to carry yet puts platform main body 59.So, can be suppressed at the problem that the rear side of putting platform 58 is adhered to the unwanted film of the inhomogeneities of Temperature Distribution in the face that causes handled object of carrying.
＜the first variant embodiment＞
Then, first variant embodiment of the present invention is described.In the above-described embodiments, supporting tube cap assembly 65 is formed as the one object, but be not limited thereto, become easily, also can supporting tube cap assembly 65 cylindraceous is divided into a plurality of on short transverse and it can be linked each other in order to make this assembling.Fig. 7 A and Fig. 7 B are the figure of cap assembly of first variant embodiment of the such mounting base structure of the present invention of expression.Fig. 7 A representes longitudinal section, and Fig. 7 B representes the cross-sectional view of lower cover portion.In addition, in Fig. 7 A and Fig. 7 B, to marking same reference marks to the identical structure division of structure division shown in Figure 6, and omit its explanation with Fig. 1.
Shown in Fig. 7 A and Fig. 7 B, at this, supporting tube cap assembly 65 is divided into two parts on short transverse, comprise 65A of upper lid portion and the 65B of lower cover portion.In addition, can certainly further supporting tube cap assembly 65 be divided into more than three parts.And, in the bottom of the 65A of upper lid portion and the upper end of the 65B of lower cover portion, be formed with the seal box joint 210 of socket shape.And, at this,, on longitudinal direction, the 65B of lower cover portion is cut apart in order further to improve assembleability, be that two the cover 65B-1 that halve, 65B-2 of semicircle arcuation form by the cross section.And the two ends of covering the junction surface of 65B-1,65B-2 in two bisections of semicircle arcuation are respectively arranged with link piece 212-1,212-2.Through with fastening this two link piece 212-1 of bolt 214 difference, 212-2, can link two halve cover 65B-1,65B-2.
In addition; Junction surface at two halve cover 65B-1,65B-2 is formed with the step-like joint stage portion 216 that can embed each other; Path-length in the small gap that this joint stage portion produces is longer, and the processing gas in the container handling 22 etc. can not easily be invaded in the 65B of lower cover portion.
In fact; When the film forming of implementing metal film through the processing unit 20 that is provided with above-mentioned supporting tube cap assembly 65 is handled; Near the inner surface at the bisection cover 65B-1 of the formation lower cover 65B of portion, the junction surface of 65B-2 and near the inner surface of gas vent 196 adhere to the unwanted film that certain degree is arranged, but almost can't see paying of unwanted film at the inner surface of the 65A of upper lid portion.In addition, can confirm not adhere to unwanted film carrying upper surface and the lower surface put platform main body 59.Wherein, even under the situation of first variant embodiment, as stated, also can omit center side overlay 63B certainly.
＜the second variant embodiment＞
Then, second variant embodiment of the present invention is described.Before embodiment in, purge gas is via carrying gap 184 that three through holes 174 put platform main body 59 form and flow into to be formed at and carry the side plate 63 ' of putting platform cap assembly 63 and year put the gap 190 between the platform main body 59 being arranged at.In this case; To put upwards becoming in week of platform main body 59 inhomogeneous carrying for the pressure of the purge gas in these gaps 190; Its result; Invade in small gap via contact site 200 (with reference to Fig. 6) from this gap 190 in order to prevent to handle gas, become inhomogeneous, have the worry of emitting of the purge gas that is difficult to carry out design to the flow of handling the purge gas that space S is sidelong out.
So,, in this second variant embodiment, shown in Fig. 8 A and Fig. 8 B, a plurality of gas grooves are set at butt teat 89 in order to eliminate such worry.Fig. 8 A and Fig. 8 B are that second variant embodiment of expression processing unit of the present invention was put the figure of the part of platform in employed year.Fig. 8 A is the partial enlarged drawing that a part of putting platform 58 is carried in expression, and Fig. 8 B is the partial top view of the lower surface of expression thermal diffusion plate 61.In addition, about Fig. 8 A and Fig. 8 B, to marking same reference marks to the identical structure division of structure division shown in Figure 6 with Fig. 1.
As stated, at this, the surface (lower surface) of the butt teat 89 that is provided with annularly at the periphery of thermal diffusion plate 61 is formed with the gas grooves 220 of on the Width of butt teat 89, extending.This gas grooves 220 is provided with a plurality of with the interval of regulation along circumferentially full week of butt teat 89, make through gas grooves 220 between the gap 190 of gas diffusion chamber 88 and outer circumferential side directly to be communicated with.The width L2 of this gas grooves 220 is that the number of setting is not particularly limited about number mm, but for example enough in the scope about 10～50.
This second variant embodiment situation under, the purge gas in the gas diffusion chamber 88 flows directly into the gap 190 of outer circumferential side via a plurality of gas grooves 220 that are arranged at butt teat 89.The pressure that thus, can be suppressed at purge gas in the gap 190 uneven problem that becomes.Its result, 190 become evenly to the flow of handling the purge gas that space S is sidelong out via the small gap of contact site 200 from the gap, can emit purge gas like design.
The variant embodiment of＜thermocouple＞
Then, the variation to thermocouple 80,81 describes.The thermocouple of explaining before this 80,81; As shown in Figure 9; Lower surface at thermal diffusion plate 61 is provided with jut 222,224; And this jut 222,224 is formed with along the installing hole 222A of longitudinal direction with along the installing hole 224A of transverse direction, in this installing hole 222A, 224A, inserts measuring junction 80A, the 81A that thermocouple 80,81 is installed respectively.
In this case, in order to ensure the precision of temperature measuring, measuring junction 80A, 81A need contact thermal diffuser plate 61 all the time.So hot stroke is also considered in the upper end of thermocouple 80,81, is installed on thermal diffusion plate 61 with higher installation accuracy.
But; When repeated treatments, when thermocouple 80,81 self carries out repeatedly hot stretching, compared with the supporting tube 60 of quartz system owing to semiconductor wafer; The hot stroke of inserting a side of leading to this inner thermocouple 80,81 is bigger; The upper end of thermocouple 80,81 under the worst situation, has the problem of damaging thermal diffusion plate 61 with the mode effect of relatively hot diffuser plate 61 projections.
So, at this, spring portion is set at thermocouple self, absorb the flexible distortion that produces of the heat of following thermocouple self.Figure 10 is the partial enlarged drawing of an example of the variant embodiment of the such thermocouple of expression, and Figure 11 A and Figure 11 B are the enlarged drawings of representing the spring portion of thermocouple.In addition, to marking same reference marks to the identical structure division of structure division shown in Figure 8, and omit its explanation with Fig. 1.
Shown in Figure 10, Figure 11 A and Figure 11 B, be formed with coiling thermocouple 80,81 self in the way on the length direction of thermocouple 80,81 and the spring portion 226,228 that forms.Figure 11 A representes to assemble the state before two thermocouples 80,81, and Figure 11 B representes to assemble the state behind two thermocouples 80,81.
Particularly, spring portion 226,228 is arranged at the lower side of the length direction of each thermocouple 80,81 respectively.Each spring portion 226,228 is wound as helical form respectively, has the spring function that can stretch with respect to its length direction.The formation position of each spring portion 226,228 is different on short transverse, and two spring portions, 226,228 nonoverlapping modes are provided with during with assembling.And, assemble with the mode in the upwardly extending straight line portion of upper and lower is inserted the logical spring portion 226,228 that reels of two thermocouples 80,81.
The diameter of thermocouple 80,81 is about 1～2mm, and the diameter of spring portion 226,228 is about 5～15mm.The winding number (number of turns) of each spring portion 226,228 for example is about 2～20 circles based on the hot stroke that should inhale.Thus, when supposing that maximum temperature that thermocouple 80,81 for example should be measured for example is 800 ℃ of left and right sides, can absorb ± hot stroke about 4mm.In addition, the length of each spring portion 226,228 for example is about 30～50mm.
The structure of thermocouple 80,81; As explanation before; Through inserting thermocouple wire in the inside of the protection metal pipe that for example constitutes as the for example Ying Kaonailu (inconel registered trade mark) of corrosion-resistant metal, and the powder of the inorganic insulation thing of the highly purified magnesia of airtight filling etc. and forming.In such thermocouple 80,81, can be easily the spring portion 226,228 of above-mentioned that kind be shaped.
Shown in figure 10, the reception position of each spring portion 226,228 is arranged at the part of the through hole 104 of installed base 92, the spatial portion that perhaps is communicated with this through hole 104.Particularly; Lower face side at the installed base 92 of dividing through hole 104; Seal member 232 by O shape ring etc. is mounted with the spring accommodating container 230 that forms the recess shape airtightly through screw 234, and portion is formed with the spring accommodation space 236 that is communicated with through hole 104 within it.
And, make spring portion 226,228 be positioned at such spring accommodation space 236.Be formed with at the root of two thermocouples 80,81 and draw piece 238, it is with integrated airtightly around two thermocouples 80,81 and fix.And, by seal portion 240 this is drawn the through hole 242 that piece 238 is installed on the bottom that is formed at spring accommodating container 230, thus thermocouple 80,81 is drawn to the outside of container handling 22.
Particularly, draw piece 238, through hole 242 being sealed airtightly the mode of ending, the seal portion 240 by the seal member by O shape ring etc. constitutes installs and fixes through screw (not shown) airtightly.So spring portion 226,228 is arranged in seal portion 240 and compares atmosphere in the inner part.When assembled heat galvanic couple 80,81, at room temperature, the upper end side of thermocouple 80,81 contact with carrying the thermal diffusion plate 61 of putting platform 58, is assembled by the state of the direction application of force a little upwards with the effect through spring portion 226,228.
Through such formation, flexible even thermocouple 80,81 follows the repeated treatments of semiconductor wafer W to carry out heat, the distortion that also can flexibly stretch and produce when absorbing this through each spring portion 226,228.So, can be suppressed at the thermal diffusion plate 61 that each thermocouple 80,81 joins and apply excessive load, prevent its breakage.
In addition; As stated; It is flexible that each spring portion 226,228 through thermocouple 80,81 carries out heat, and the state that the measuring junction 80A, 81A that can guarantee the upper end of each thermocouple 80,81 joins with thermal diffusion plate 61 all the time can be kept temperature measurement accuracy from low temperature to high temperature higherly.
At this, inserting the situation of leading in the thinner supporting tube 60 with the thermocouple 80,81 that will have spring portion 226,228 is that example is illustrated, but is not limited thereto.That is, also can the thermocouple with spring portion 226,228 80,81 be applicable to, put the existing mounting base structure of that kind of platform 2 through 4 carryings of cylindraceous thicker pillar shown in figure 15.In this case, in thicker pillar 4, insert logical thermocouple 80,81 with spring portion 226,228.
In addition, in above-mentioned each embodiment, make an end of the elastomeric element 186 that is arranged at nut 180 and carry and put platform main body 59 butts, and it is pushed, but be not limited thereto.Also can make an end and the perimeter sides overlay 63A butt of elastomeric element 186, make thermal diffusion plate 61 put that platform main body 59 is pushed with perimeter sides overlay 63A each other and integrated with carrying through elastomeric element 186.
＜conclude first variant embodiment of unit＞
Then, first variant embodiment of concluding unit 171 is described.To with before the identical part of structure division explained mark same reference marks, and omit its explanation.The bolt member of before explaining of concluding unit 171 182; Form bolt 178 and nut 180 through having the less ceramic material of corrosion resistance and metallic pollution; But in this case; The heat treated enforcement of corresponding wafer is carried and is put platform main body 59 and carry out heat with thermal diffusion plate 61 grades and stretch, so inevitably bolt 178 is applied the thermal stress of certain degree.
Particularly, the part of the neck under the head of bolt 178 is applied with bigger thermal stress.Being considered certainly when the design part of bolt 178 for the intensity of thermal stress.But, even so, also have worry to bolt 178 generation infringements.So, in concluding first variant embodiment of unit,, can't help ceramic material and form bolt 182 by metal material in order to remove the worry of such infringement.
Figure 12 A and Figure 12 B are the figure of bolt of the bolt member of expression first variant embodiment of concluding the unit, and Figure 12 A is a side view, and Figure 12 B is a upward view.At this, (with reference to Fig. 5) omitted in the nut 180 of bolt member 182 and the record of elastomeric element 186.As stated, bolt 178 is formed by metal material, and the threaded portion 178A by bolt head 178B, main part 178C and the bottom of hole enlargement of bolt 178 is all formed by metal material.For example can use nickel, nickel alloy etc. as this metal material.
And in this case, the nut 180 (with reference to Fig. 4 and Fig. 5) that is screwed to threaded portion 178A should avoid the use of metal material as far as possible, and the mode like embodiment is before formed by ceramic material.Therefore; Because the heat flexible poor (the hot stroke of metal material is bigger than the hot stroke of ceramic material) between nut 180 that constitutes by ceramic material and the bolt 178 that constitutes by metal material; On the cross-wise direction of bolt 178, produce bigger stress, produce nut 180 and self produce damaged worry.So at this, 178A is formed with that the heat of extending along the length direction of bolt 178 is flexible allows slit 250 in the threaded portion of bolt 178.
The flexible length of allowing slit 250 of this heat forms along the integral body on the length direction of threaded portion 178A for example for about about 10mm at least.In addition, the flexible width of allowing slit 250 of heat is for example for about about 0.5mm.In Figure 12 B, heat is flexible allows that slit 250 is provided with one, but is not limited thereto, also can be to allow that with heat is flexible slit 250 relative modes are provided with also in an opposite side that identical heat is flexible allows slit, can also be provided with that more heat is flexible allows slit.
Like this, form bolt 178, and 178A is provided with that heat is flexible allows slit 250 in the threaded portion, so, also can eliminate bolt 178 and self produce damaged worry even bolt 178 is applied bigger thermal stress corresponding to the heat treatment of wafer with metal material.
In addition, even the hot stroke owing to two parts is applied in bigger thermal stress between bolt 178 and nut 180, owing to be formed at the flexible gap turn narrow of allowing slit 250 of the heat of threaded portion 178A, so also can absorb this thermal stress.Its result can prevent that nut 180 from producing the problem of breakage etc. because of thermal stress.In addition, also can use the metal materials identical to form nut 180 without ceramic material with bolt 178.
＜conclude second variant embodiment of unit＞
Then, second variant embodiment of concluding unit 171 is described.Part to identical with the structure division of explaining before marks same reference marks, and omits its explanation.As before explained conclude unit 171 so that use the situation of bolt member 182 to be illustrated, but replace as example with threaded portion 178A, also can use the reason with the generation that becomes particulate etc. the threaded portion conclude unit 171.
Figure 13 is the sectional view of the installment state of such second variant embodiment of concluding the unit of expression, and Figure 14 A representes the stereogram of the integral body of second variant embodiment, and Figure 14 B is the vertical view of expression fixed part.In concluding in the unit 171 before, used bolt member 178, but replaced with threaded portion 178A, use the sleeve that does not have the threaded portion at second embodiment.Particularly, it is identical with before bolt that this concludes unit 171, has the sleeve 252 of cylinder shape, and this sleeve 252 is formed with head by a 252A of hole enlargement.This sleeve 252 is identical with before bolt, is set to insert logical (perforations) and is formed at thermal diffusion plate 61, carries each through hole 172,174,176 (with reference to Fig. 5) of putting platform main body 59 and year putting platform cap assembly 63.
The hollow space of the sleeve 252 of cylinder shape forms pin inserting hole 150.And, be provided with the discoideus support 256 of inserting logical sleeve 252 at central part in the bottom of sleeve 252.The internal diameter of the inserting hole 254 of support 256 is set at more a lot greatly than the external diameter of sleeve 252, and the periphery of sleeve 252 between form spatial portion.This spatial portion is taken in by first elastomeric element 258 that constitutes with before elastomeric element 186 identical coil springs, and inserts logical sleeves 252 at this first elastomeric element 258.
In addition, the opening diameter of the lower end of inserting hole 254 forms narrower than its upper side, and littler than the diameter of first elastomeric element 258, is formed with the engaging protuberance 256A of ring-type.Thus, the lower end that makes first elastomeric element 258 and support 256 engage protuberance 256A butt, and make the upper end put the lower surface butt of platform main body 59 with carrying.Like this, first elastomeric element 258 is installed on to carry puts between platform main body 59 and the support 256.
In addition, in the upper surface side of the circumference of support 256 along being three spring housing recess 260 in illustrated example circumferentially uniformly-spaced to be formed with a plurality of.And, take in second elastomeric element 262 that for example constitutes in each spring housing recess 260 by coil spring, and above carry to put between the platform cap assembly 63 and become pressed state.So second elastomeric element 262 is for being arranged at the state between platform cap assembly 63 and the support 256 of putting that carries.
And, the fixed part 264 that is used for fixing support 256 is installed in the lower end of sleeve 252.Particularly, be formed with the engaging recessed part 266 of the ring-type that makes its reduced diameter in the bottom of sleeve 252.And fixed part 264 is configured as discoideus, and the engaging recessed part 266 that is formed with ring-type at this fixed part 264 to its central part can be inserted logical switch-in part 264A.
Thus, under the state pushed of elastic force of opposing first and second elastomeric elements 258,260, embed the part of the engaging recessed part 266 of sleeve 252, fixedly integral body at switch-in part 264A.At this, be provided with along its thickness of slab direction perforation the adjustment screw 268 that can move forward and backward at discoideus fixed part 264.At this, adjustment screw 268 at the circumference of fixed part 264 along it circumferentially uniformly-spaced to be provided with a plurality of for example three, can adjust pressing force thus to support 256.
At this, sleeve 252 and support 256 by the ceramic material of aluminium nitride or aluminium oxide etc., or form by nickel or nickel alloy etc.In addition, discoideus fixed part 264 and adjustment screw 268 are formed by nickel or nickel alloy.And first and second elastomeric elements 258,262 can use the few metal spring of the worry of ceramics springs or metallic pollution etc.
Even in this case, can bring into play the action effect identical with situation about explaining with reference to Fig. 5 before.And, at this,, correspondingly not only can suppress the generation of particulate, and can reduce the position that the thermal stress that becomes damage reasons applies because the sleeve 252 of concluding unit 171 does not have the threaded portion.In addition; Logical three adjustment screws 268 that are arranged at discoideus fixed part 264 are advanced or retreat; Pressing force for support 256 is changed; Thus, can change at the upper surface of support 256 and carry and put the interval in the small gap that produces between the lower surface of platform cap assembly 63, and can control the N that emits to the outside from this gap
2The flow of gas.
In addition, also can pass through the grounding electrode of setting and dual-purpose electrode 66 same structures, and the lower end ground connection of connected function barred body 62 is used as contact rod, make grounding electrode ground connection.In addition, under the situation of the heater that is provided with a plurality of zones, when making heating installation power supply rod ground connection, can be general as the heating installation power supply rod of above-mentioned ground connection with a side's of each regional heater heating installation power supply rod.
In addition; In this execution mode; Processing unit to use plasma is illustrated as example; But be not limited thereto, also can be applicable to used carry put platform 58 imbed all processing unit of the mounting base structure of heating unit 64, for example based on the film formation device of the plasma CVD that uses plasma, based on without the film formation device of the hot CVD of plasma, Etaching device, thermal diffusion device, disperser, reforming apparatus etc.So dual-purpose electrode 66 (comprising chuck electrode or high-frequency electrode), thermocouple 80,81 and attached its parts can omit.
Also have, be not limited to spray head 24, for example also can constitute the gas feed unit by inserting the gas nozzle that leads in the container handling 22 as the gas feed unit.
In addition, also have,, use thermocouple 80,81 at this, but be not limited thereto, also can use the radiation thermometer as temperature measurement unit.In this case, the optical fiber of the employed conducting light of radiation thermometer is the function barred body, and this optical fiber is inserted and led in the supporting tube 60.
In addition, be that example is illustrated at this with the semiconductor wafer as handled object, but be not limited thereto, also can the present invention be applicable to glass substrate, LCD substrate, ceramic substrate etc.
Claims (30)
1. mounting base structure, it is arranged at and can carries out in the container handling of exhaust, is used for carrying putting the handled object that should handle, and said mounting base structure is characterised in that, comprising:
Carry and to put platform, put platform main body upper support in tabular carrying and be used for carrying the thermal diffusion plate of putting said handled object, and the interface branch of putting platform main body and said thermal diffusion plate at said year is provided with gas diffusion chamber;
Be arranged at the heating unit of putting platform in said year;
One or more supporting tube is used to support and put platform in said year, erects setting from the bottom of said container handling, and its upper end is connected with the lower surface of putting platform in said year, and is communicated with said gas diffusion chamber, flows through purge gas;
Carry and to put the platform cap assembly, it is provided with to cover the side of putting the platform main body in said year and the mode of lower surface; With
The supporting tube cap assembly; Its surround said supporting tube around; And upper end and put the platform cap assembly in said year and link; From said gas diffusion chamber downwards directed flow spend said year and put the platform main body and put the said purge gas in the gap between the platform cap assembly in said year, said purge gas is discharged from gas vent.
2. mounting base structure as claimed in claim 1 is characterized in that:
Put the periphery of platform main body and/or said thermal diffusion plate at said year, be provided with the butt teat that forms ring-type, be used to make said year and put platform main body and said thermal diffusion plate butt.
3. mounting base structure as claimed in claim 2 is characterized in that:
On the surface of the butt teat of said ring-type, week upwards with a plurality of gas grooves that form along the Width of this butt teat of being arranged at intervals with of regulation.
4. like each described mounting base structure in the claim 1 to 3, it is characterized in that:
Put the platform cap assembly in said year and have to cover and put the side plate of the side of platform main body in said year, this side plate and said side separate the gap, and the upper end of said side plate contacts with the lower surface of said thermal diffusion plate, is formed with contact site.
5. like each described mounting base structure in the claim 1 to 4, it is characterized in that:
Put platform main body, said thermal diffusion plate in said year and put the platform cap assembly in said year and be one through concluding the unit binding.
6. mounting base structure as claimed in claim 5 is characterized in that:
The said unit of concluding has and connects the bolt of putting platform main body, said thermal diffusion plate and putting the platform cap assembly in said year in said year, with at said thermal diffusion plate and put the state that clamping between the platform cap assembly put the platform main body in said year in said year and link.
7. mounting base structure as claimed in claim 6 is characterized in that:
Be provided with to said thermal diffusion plate side and push the elastomeric element of putting the platform main body in said year in the said unit of concluding.
8. mounting base structure as claimed in claim 7 is characterized in that:
Said elastomeric element is made up of ceramics springs or metal spring.
9. like each described mounting base structure in the claim 6 to 8, it is characterized in that:
Be formed with the threaded portion that screws togather nut in the lower end of said bolt,
Be formed with in said threaded portion that the heat of extending along the long side direction of said bolt is flexible allows slit.
10. mounting base structure as claimed in claim 9 is characterized in that:
Said bolt is made up of metal material,
Said nut is made up of ceramic material.
11., it is characterized in that like each described mounting base structure in the claim 6 to 10:
Be formed with the pin inserting hole at said bolt, this pin inserting hole be used for inserting logical said handled object is risen or fall raise pin.
12. mounting base structure as claimed in claim 5 is characterized in that:
The said unit of concluding has:
Mode to connect said thermal diffusion plate, put the platform main body in said year and to put the platform cap assembly in said year is provided with, and head is by the cylinder-shaped sleeve of hole enlargement;
Inserted logical support by the bottom of said sleeve;
Be arranged at first elastomeric element of putting in said year between platform main body and the said support;
Be arranged at second elastomeric element of putting in said year between platform cap assembly and the said support; With
Fixed part, the state of pushing with the elastic force of resisting said first elastomeric element and second elastomeric element is fixed in said support the lower end of said sleeve.
13. mounting base structure as claimed in claim 12 is characterized in that:
Be provided with the adjustment screw of adjustment at said fixed part for the pressing force of said support.
14., it is characterized in that like claim 12 or 13 described mounting base structures:
Said first elastomeric element and/or second elastomeric element are made up of ceramics springs or metal spring.
15., it is characterized in that like each described mounting base structure in the claim 12 to 14:
The hollow space of said cylinder-shaped sleeve is as inserting the logical pin inserting hole that raises pin that said handled object is risen or fall and forming.
16., it is characterized in that like each described mounting base structure in the claim 1 to 15:
The indoor pressure of said gaseous diffusion is in the barotropic state higher than the pressure in the said container handling.
17., it is characterized in that like each described mounting base structure in the claim 1 to 16:
Put platform in said year and said supporting tube is formed by dielectric respectively.
18. mounting base structure as claimed in claim 17 is characterized in that:
Said thermal diffusion plate is made up of opaque dielectric.
19., it is characterized in that like each described mounting base structure in the claim 1 to 18:
Said supporting tube engages with the central part of putting platform in said year.
20., it is characterized in that like each described mounting base structure in the claim 1 to 19:
One or many root functionalitys barred body in said supporting tube, have been taken in.
21. mounting base structure as claimed in claim 20 is characterized in that:
Said function barred body is the heating installation power supply rod that is electrically connected with said heating unit side.
22. mounting base structure as claimed in claim 20 is characterized in that:
Put platform at said year and be provided with the chuck electrode that electrostatic chuck is used,
Said function barred body is that the chuck that is electrically connected with said chuck electrode is used feeder rod used therein.
23. mounting base structure as claimed in claim 20 is characterized in that:
Put platform at said year and be provided with the high-frequency electrode that is used to apply RF power,
Said function barred body is the high frequency feeder rod used therein that is connected with said high frequency electrode electricity.
24. mounting base structure as claimed in claim 20 is characterized in that:
Put platform at said year and be provided with the dual-purpose electrode, this dual-purpose electrode is also used as electrostatic chuck chuck electrode of using and the high-frequency electrode that is used to apply RF power,
Said function barred body is the dual-purpose feeder rod used therein that is connected with said dual-purpose electrode electricity.
25. mounting base structure as claimed in claim 20 is characterized in that:
Said function barred body is to be used to measure the thermocouple of putting the temperature of platform in said year.
26. mounting base structure as claimed in claim 25 is characterized in that:
The spring portion that forms being formed with coiling said thermocouple self midway of said thermocouple.
27. mounting base structure as claimed in claim 26 is characterized in that:
Said spring portion self forms through the helically said thermocouple of reeling.
28., it is characterized in that like claim 23 or 26 described mounting base structures:
Said spring portion is arranged in the atmosphere of the inboard of sealing, and sealing portion is provided with in order outside said container handling, to draw said thermoelectricity with airtight conditions occasionally.
29. a processing unit, it is used for handled object is implemented to handle, and this processing unit is characterised in that, comprising:
Can carry out the container handling of exhaust;
Be used for carrying and put each described mounting base structure said handled object, claim 1 to 28; With
The gas feed unit of supply gas in said container handling.
30. processing unit as claimed in claim 29 is characterized in that:
The gas vent of the inactive gas of said mounting base structure be positioned at said container handling gas discharge outlet near.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009298565 | 2009-12-28 | ||
| JP2009-298565 | 2009-12-28 | ||
| JP2010072495 | 2010-03-26 | ||
| JP2010-072495 | 2010-03-26 | ||
| JP2010-146514 | 2010-06-28 | ||
| JP2010146514A JP2011222931A (en) | 2009-12-28 | 2010-06-28 | Mounting table structure and treatment apparatus |
| PCT/JP2010/072915 WO2011081049A1 (en) | 2009-12-28 | 2010-12-20 | Mounting table structure and processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102668060A true CN102668060A (en) | 2012-09-12 |
Family
ID=44226457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800555698A Pending CN102668060A (en) | 2009-12-28 | 2010-12-20 | Mounting table structure and processing apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2011222931A (en) |
| KR (1) | KR20120112661A (en) |
| CN (1) | CN102668060A (en) |
| TW (1) | TW201138016A (en) |
| WO (1) | WO2011081049A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016145959A1 (en) * | 2015-03-16 | 2016-09-22 | 京东方科技集团股份有限公司 | Substrate heating device and substrate heating method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106463446A (en) * | 2014-06-12 | 2017-02-22 | 东京毅力科创株式会社 | Placing table and plasma treatment apparatus |
| CN106463446B (en) * | 2014-06-12 | 2019-08-13 | 东京毅力科创株式会社 | Mounting table and plasma processing apparatus |
| WO2016145959A1 (en) * | 2015-03-16 | 2016-09-22 | 京东方科技集团股份有限公司 | Substrate heating device and substrate heating method |
| CN109564870A (en) * | 2016-08-04 | 2019-04-02 | 日本新工芯技株式会社 | Electrode plate |
| CN109564870B (en) * | 2016-08-04 | 2023-05-02 | 日本新工芯技株式会社 | Electrode plate |
| TWI819091B (en) * | 2018-10-16 | 2023-10-21 | 南韓商美科陶瓷科技有限公司 | Middle zone independent control ceramic heater |
| CN110289241A (en) * | 2019-07-04 | 2019-09-27 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and preparation method thereof, processing chamber and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011081049A1 (en) | 2011-07-07 |
| KR20120112661A (en) | 2012-10-11 |
| TW201138016A (en) | 2011-11-01 |
| JP2011222931A (en) | 2011-11-04 |
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