CN102637678A - Packaging and stacking device and method for manufacturing same - Google Patents
Packaging and stacking device and method for manufacturing same Download PDFInfo
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- CN102637678A CN102637678A CN201210008301XA CN201210008301A CN102637678A CN 102637678 A CN102637678 A CN 102637678A CN 201210008301X A CN201210008301X A CN 201210008301XA CN 201210008301 A CN201210008301 A CN 201210008301A CN 102637678 A CN102637678 A CN 102637678A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Abstract
Disclosed are a packaging and stacking device and a method for manufacturing the same. The packaging and stacking device comprises a first packaging structure, a second packaging structure and packaging adhesive, a first metal column and a first electronic component are arranged on the surface of the first packaging structure, a second metal column and a second electronic component are disposed on the surface of the second packaging structure, the packaging adhesive is arranged between the first packaging structure and the second packaging structure and covers the first electronic component, the second packaging structure is stacked on the first packaging structure by means of connecting the second metal column with the first metal column, accordingly, the two packaging structures are not supported by the metal columns, a gap between the two packaging structures is filled by the packaging adhesive, and a substrate can be prevented from warping.
Description
Technical field
The present invention relates to a kind of encapsulation stack apparatus and method for making thereof, relate in particular to a kind of encapsulation stack apparatus and method for making thereof that must promote the storehouse yield.
Background technology
Evolution along with semiconductor packaging; Semiconductor device (Semiconductor device) has been developed different encapsulation kenels, and is to promote electrical functionality and save encapsulated space, satisfies heap and adds a plurality of encapsulating structures to form encapsulation stack apparatus (Package on Package; POP); This kind packaged type can be brought into play the heterogeneous integration characteristic of system in package (SiP), can be with the electronic building brick of different functions, for example: internal memory, central processing unit, painting processor, image application processor etc.; Reach the integration of system by stack design, be fit to be applied to the various electronic products of light and thin type.See also Fig. 1, it is the generalized section of existing encapsulation stack apparatus.
As shown in Figure 1, existing encapsulation stack apparatus is that the second encapsulating structure 1b is stacked on the first encapsulating structure 1a.
This first encapsulating structure 1a comprises and has first and second relative surperficial 11a, first substrate 11 of 11b and be located at first electronic building brick 10 that this first surface 11a went up and electrically connected this first substrate 11.This second encapsulating structure 1b comprises and has the 3rd and the 4th relative surperficial 12a, second substrate 12 of 12b and be located at second electronic building brick 15 that the 3rd surperficial 12a went up and electrically connected this second substrate 12.In addition, go up formation solder ball 110, fold by this solder ball 110 with the 4th surperficial 12b that makes this second substrate 12 and establish and be electrically connected on this first substrate 11 through first surface 11a in this first substrate 11.Again; Have the ball of planting pad 112 on the second surface 11b of this first substrate 11 for combination soldered ball 14, and this first and second electronic building brick 10,15 is driving component and/or passive component; And to cover crystal type electric connection substrate; And by primer 13 fillings in first and second electronic building brick 10,15 and 12 of first substrate 11 and second substrates, to form chip bonding.
Yet; In the existing apparatus, be by welding procedure with this first encapsulating structure 1a of storehouse and the second encapsulating structure 1b, result in the reflow process; The soldering tin material of this solder ball 110 pollutes the surface of this first encapsulating structure 1a and the second encapsulating structure 1b easily; And the size variation of this solder ball 110 is wayward, puts so cause easily to be between this two encapsulating structure to tilt to connect, and very causes in the problem that produces the contact skew.
In addition; When the height of storehouse need increase; The diameter of this solder ball 110 need increase, and causes the area of the shared substrate surface (first surface 11a and the 4th surperficial 12b) of this solder ball 110 to increase, thereby the space of wiring and electronic building brick laying on the substrate surface is compressed.
Again, the volume of this solder ball 110 increases, and is easy to generate bridge joint (bridge) phenomenon, with the yield that influences product.
In addition; Only support between this first encapsulating structure 1a and the second encapsulating structure 1b by this solder ball 110; Will be too much because of the space between this first encapsulating structure 1a and the second encapsulating structure 1b, cause this first and second substrate 11,12 that warpage (warpage) takes place easily.
Therefore, how to overcome variety of problems of the prior art, become the problem of desiring most ardently solution at present in fact.
Summary of the invention
In view of the disappearance of above-mentioned prior art, main purpose of the present invention is to provide a kind of encapsulation stack apparatus and method for making thereof, to avoid substrate generation warpage.
Encapsulation stack apparatus provided by the present invention comprises: first encapsulating structure, and it comprises: first substrate, it has opposite first and second surface, and has first metal column on the first surface of this first substrate; And first electronic building brick, it is located on the first surface of this first substrate, and electrically connects this first substrate; Second encapsulating structure; It comprises: second substrate; It has the 3rd relative surface and the 4th surface, and has second metal column on the 4th surface of this second substrate, and this second metal column connects this first metal column; This second encapsulating structure is stacked on this first encapsulating structure, again the length of this second metal column greater than, be equal to or less than the length of this first metal column; And second electronic building brick, it is located on the 3rd surface of this second substrate, and electrically connects this second substrate; And packing colloid, it is located between the 4th surface of first surface and second substrate of this first substrate, and coats this first electronic building brick.
The present invention also provides a kind of method for making that encapsulates stack apparatus; It comprises: first substrate with opposite first and second surface is provided; Has first metal column on the first surface of this first substrate; And second substrate with relative the 3rd surface and the 4th surface is provided, has second metal column on the 4th surface of this second substrate, again the length of this second metal column greater than, be equal to or less than the length of this first metal column; First electronic building brick is set on the first surface of this first substrate; And this first electronic building brick electrically connects this first substrate; To form first encapsulating structure; On the 3rd surface of this second substrate, second electronic building brick is set again, and this this second substrate of second electronic building brick electric connection, to form second encapsulating structure; This second metal column is connected this first metal column, this second encapsulating structure is stacked on this first encapsulating structure; And between the 4th surface of the first surface of this first substrate and second substrate, form packing colloid, and coat this first electronic building brick.
The present invention provides a kind of encapsulation stack apparatus again, and it comprises: first encapsulating structure, and it comprises: first substrate, it has opposite first and second surface, and has first metal column on the first surface of this first substrate; And first electronic building brick, it is located on the first surface of this first substrate to cover crystal type, and electrically connects this first substrate; Primer, it is formed between the first surface of this first electronic building brick and this first substrate; Second encapsulating structure; It comprises: second substrate; It has the 3rd relative surface and the 4th surface, and has second metal column on the 4th surface of this second substrate, and this second metal column connects this first metal column; This second encapsulating structure is stacked on this first encapsulating structure, again the length of this second metal column greater than, be equal to or less than the length of this first metal column; And second electronic building brick, it is located on the 3rd surface of this second substrate, and electrically connects this second substrate; And packing colloid, it is located between the 4th surface of first surface and second substrate of this first substrate, and coats this first electronic building brick and primer.
According to aforementioned means, this first substrate is provided with metal coupling, put this first electronic building brick to connect, and this metal coupling can be copper bump.This metal coupling is provided with soldering tin material again, makes this primer also coat this soldering tin material.
In aforesaid device and the method for making thereof, this first and second metal column can be the copper post, and electroplate forming, and in other embodiment, also can be other material or molding mode, be not limited to above-mentioned.
In aforesaid device and the method for making thereof, the end face width of this first metal column can greater than, be equal to or less than the end face width of this second metal column, do not have special restriction.
In aforesaid device and the method for making thereof, on this first metal column, can form soldering tin material, be beneficial to combine this second metal column.
In aforesaid device and the method for making thereof, can have the ball of planting pad on the second surface of this first substrate, for combining soldered ball.
In aforesaid device and the method for making thereof, can be on demand, making this first electronic building brick is driving component and/or passive component, does not have special restriction.In addition, this first electronic building brick can the routing mode or is covered crystal type and electrically connect this first substrate.
By on can know that the present invention encapsulates stack apparatus and method for making thereof, by the butt joint of this first and second metal column, be beneficial to the storehouse operation; And electrically connect two encapsulating structures by metal column,, and be easy to control, make it can overcome to tilt to connect between stack architecture and put and the problem of contact skew by the size variation of this metal column so this metal material not only can not pollute substrate surface.
In addition; When the height of this metal column is adjusted arbitrarily, can't increase its diameter, so compared to prior art; Therefore the area of the substrate surface that metal column of the present invention is shared can not increase, and can not compress wiring space on the substrate surface, and the laying space of electronic building brick.
Again, this metal column to be electroplate forming, so it when highly increasing, can't produce the bridge joint phenomenon, to promote the yield of product.
In addition, not only support between two encapsulating structures, and fill up the space between the two substrates, so can avoid substrate generation warpage by this packing colloid by this metal column.
Describe the present invention below in conjunction with accompanying drawing and specific embodiment, but not as to qualification of the present invention.
Description of drawings
Fig. 1 is the cross-sectional schematic of existing encapsulation stack apparatus;
Fig. 2 A to Fig. 2 G encapsulates the cross-sectional schematic of first embodiment of the method for making of stack apparatus for the present invention; Wherein, Fig. 2 G ' and Fig. 2 G " be other embodiment of Fig. 2 G;
Fig. 3, Fig. 3 ' and Fig. 3 " encapsulate the cross-sectional schematic of other embodiment of first embodiment of stack apparatus for the present invention;
Fig. 4 encapsulates the cross-sectional schematic of other embodiment of first embodiment of stack apparatus for the present invention; And
Fig. 5 A to Fig. 5 C encapsulates the cross-sectional schematic of second embodiment of the method for making of stack apparatus for the present invention.
The primary clustering symbol description
1a, 2a first encapsulating structure
1b, 2b second encapsulating structure
10,20,20 ' first electronic building brick
11,21 first substrates
11a, the 21a first surface
11b, the 21b second surface
110 solder ball
112,212 plant the ball pad
12,22 second substrates
12a, 22a the 3rd surface
12b, 22b the 4th surface
13,250b, 550 primers
14,24 soldered balls
15,25a, 25a ', 25b second electronic building brick
200,250 electronic padses
200a, the 250a solder bump
210,210 ', 210 ", 310,310 ', 310 ", 410 first metal columns
210a, 210b, 210c, 310a, 310b, 310c end face
211 soldering tin materials
211a, the 221a weld pad
211b, the 221b electric contact mat
213,223 insulating protective layers
213a, the 223a perforate
220,220 ', 220 ", 320,320 ', 320 ", 420 second metal columns
220a, 220b, 220c, 320a, 320b, 320c end face
23 packing colloids
540 metal couplings
D, d ', d ", r, r ', r " and width
H, h ', h ", t, t ', t " and length
Embodiment
Below by particular specific embodiment execution mode of the present invention is described, the personage who is familiar with this skill can understand other advantage of the present invention and effect easily by the content that this specification disclosed.
See also Fig. 2 A to Fig. 2 G, it encapsulates the cross-sectional schematic of first embodiment of the method for making of stack apparatus for the present invention.
Shown in Fig. 2 A; At first; Provide one have opposite first 21a and a second surface 21b first substrate 21, have a plurality of weld pad 211a and electric contact mat 211b on the first surface 21a of this first substrate 21, and have a plurality of ball pads 212 of planting on the second surface 21b of this first substrate 21.
In present embodiment; The surperficial 21a of first and second of this first substrate 21; 21b is last to have the for example insulating protective layer 213 of welding resisting layer, and this insulating protective layer 213 is formed with a plurality of perforate 213a, to expose those weld pads 211a, electric contact mat 211b by those perforates 213a and to plant ball pad 212.
Shown in Fig. 2 B; On the exposed surface of this electric contact mat 211b, electroplate and form first metal column 210; And on the exposed surface of this weld pad 211a, first electronic building brick 20 is set by solder bump 200a; Promptly the electronic pads 200 of this first electronic building brick 20 electrically connects this first substrate 21 to cover crystal type, to form the first encapsulating structure 2a.
In present embodiment, this first metal column 210 is the copper post, can form soldering tin material 211 on this copper post; Be beneficial to follow-up storehouse technology; And this first electronic building brick 20 is driving component or passive component, and can use a plurality of first electronic building bricks 20, and optional from initiatively assembly, passive component or its combination; This driving component is for for example: chip, and this passive component is for for example: resistance, electric capacity and inductance.
Shown in Fig. 2 C; Provide one to have the 3rd relative surperficial 22a and second substrate 22 of the 4th surperficial 22b; Have a plurality of weld pad 221a on the 3rd surperficial 22a of this second substrate 22; And have a plurality of electric contact mat 221b on the 4th surperficial 22b of this second substrate 22, the 3rd of this second substrate 22 the and the 4th surperficial 22a again, 22b is last to have the for example insulating protective layer 223 of welding resisting layer; And this insulating protective layer 223 is formed with a plurality of perforate 223a, to expose those weld pads 221a and electric contact mat 221b by those perforates 223a.
Shown in Fig. 2 D; On the exposed surface of the electric contact mat 221b of this second substrate 22, electroplate and form for example second metal column 220 of copper post, and the length h of this second metal column 220 is less than the length t or first metal column 210 and soldering tin material 211 length summations of this first metal column 210.On the exposed surface of the weld pad 221a of this second substrate 22, by solder bump 250a a plurality of second electronic building brick 25a are set again, 25b is to form the second encapsulating structure 2b.Those second electronic building bricks 25a, the electronic pads 250 of 25b electrically connects this second substrate 22 to cover crystal type.
In present embodiment, the second electronic building brick 25a on right side can be the for example driving component of chip, thereby needs to form primer 250b between the 3rd surperficial 22a of the second electronic building brick 25a and second substrate 22; In addition, the second electronic building brick 25b in left side can be the for example passive component of resistance, electric capacity and inductance etc.
Shown in Fig. 2 E, this second metal column 220 is connected this first metal column 210 (or the soldering tin material 211 on it), this second encapsulating structure 2b is stacked on this first encapsulating structure 2a.
In present embodiment; The end face 210a of this first metal column 210 (being meant the surface that two metal columns engage) width d (also can represent maximum gauge) is greater than the end face 220a width r of this second metal column 220; To be beneficial to contraposition, can reduce the problem of contact skew by the difference of end face width.
In addition, when the height of this first and second metal column 210,220 increases; Can't increase the diameter of this first and second metal column 210,220, not only can reach the purpose of thinning; And can be in presumptive area; Form more first and second metal columns 210,220 that can supply to form contact, be beneficial to this first encapsulating structure 2a and dock with this second encapsulating structure 2b.
Shown in Fig. 2 F, between the 4th surperficial 22b of the first surface 21a of this first substrate 21 (being the insulating protective layer 213 on it) and second substrate 22 (being the insulating protective layer 223 on it), form packing colloid 23, and coat this first electronic building brick 20.
Shown in Fig. 2 G, on the exposed surface of planting ball pad 212 of this first substrate 21, combine soldered ball 24.
Shown in Fig. 2 G ', the end face 210b width d ' (like diameter) of this first metal column 210 ' can equal the end face 220b width r ' (like diameter) of this second metal column 220 ', though this first and second metal column 210 '; 220 ' end face 210b, 220b width d ', r ' is identical; But the size variation of this metal column is controlled easily; So, use metal column to make storehouse and still be beneficial between this stack architecture vertical junction and put, and can reduce the problem of contact skew compared to prior art.
Perhaps, like Fig. 2 G " shown in, this first metal column 210 " end face 210c width d " can be less than this second metal column 220 " and end face 220c width r ".
See also Fig. 3, Fig. 3 ' and Fig. 3 "; in other embodiment of first embodiment; the length h ' of this second metal column 320 is greater than the length t ' of this first metal column 310; and the end face 310a width d (like diameter) of this first metal column 310 can be greater than the end face 320a width r (like diameter) of this second metal column 320, and on this second substrate 22, the second electronic building brick 25a like driving component only is set.
Again, the end face 310b width d ' of this first metal column 310 ' can equal the end face 320b width r ' of this second metal column 320 '; Perhaps, this first metal column 310 " end face 310c width d " can be less than this second metal column 320 " and end face 320c width r ".
See also Fig. 4; In other embodiment of first embodiment; The length h of this second metal column 420 " equal the length t of this first metal column 410 ", and this first electronic building brick 20 ' and the second electronic building brick 25a ' electrically connect this first and second substrate 21,22 with the routing mode.
The present invention forms this first and second metal column 210 by plating mode; 220; With storehouse and electrically connect this first and second encapsulating structure 2a, so 2b is compared to the reflow mode of prior art; Metal column material of the present invention can not pollute this first and second encapsulating structure 2a, the surface of 2b.
In addition, when this first metal column 210,310,410 and second metal column 220,320; When 420 height is adjusted arbitrarily,, can't change this first and second metal column 210,310 like Fig. 2 G, Fig. 3 and Fig. 4; 410,220,320,420 preset diameters (width d; R), so compared to prior art, first and second metal column 210,310 of the present invention; The area of 410,220,320,420 shared substrate surfaces (first surface 21a and the 4th surperficial 22b) can not increase arbitrarily; Therefore can not compress wiring space on the substrate surface, and the laying space of electronic building brick, comparatively speaking, if when having the demand of identical wiring quantity, the volume of encapsulation stack apparatus of the present invention can dwindle many than prior art.
Again, this first and second metal column 210,220th, with what electroplate to form, thus when the height of this first and second metal column 210,220 increases, can't produce bridge joint (bridge) phenomenon, to promote the yield of product.
In addition; This first and second encapsulating structure 2a not only supports by this first and second metal column 210,220 between the 2b; And make this packing colloid 23 fill up this first and second substrate 21 by for example sealing mould mode (molding); Space between 22 is so can avoid this first and second substrate 21,22 that warpage (warpage) takes place.
The present invention also provides a kind of encapsulation stack apparatus, and it comprises: the first encapsulating structure 2a, the second encapsulating structure 2b and be located at this first and second encapsulating structure 2a, the packing colloid 23 between the 2b.
The described first encapsulating structure 2a comprises: have first and second relative surperficial 21a, first substrate 21 of 21b and be located at first electronic building brick 20,20 ' that this first surface 21a went up and electrically connected this first substrate 21.Have first metal column 210,310,310 ', 310 on the first surface 21a of this first substrate 21 "; 410, and have the ball of planting pad 212 on the second surface 21b of this first substrate 21 for combination soldered ball 24, and this first metal column 210,310; 310 ', 310 ", 410 for electroplating the copper posts that form.This first electronic building brick 20,20 ' is driving component and/or passive component, and this first electronic building brick 20,20 ' is with the routing mode or cover crystal type and electrically connect this first substrate 21.
The described second encapsulating structure 2b comprises: have the 3rd and the 4th relative surperficial 22a, second substrate 22 of 22b and be located at the second electronic building brick 25a that the 3rd surperficial 22a went up and electrically connected this second substrate 22,25b, 25a '.Have second metal column 220,320,320 ', 320 on the 4th surperficial 22b of this second substrate 22 ", 420; and this second metal column 220,320,320 ', 320 ", 420 connect this first metal column 210; 310,310 ', 310 ", 410, be stacked on this first encapsulating structure 2a to make this second encapsulating structure 2b; and this second metal column 220,320,320 ', 320 ", 420 for electroplating the copper post that forms.
This second metal column 220,320,320 ', 320 again ", 420 length h, h ', h " less than, more than or equal to this first metal column 210,310,310 ', 310 ", 410 length t, t ', t ".
Described packing colloid 23 is located between the 4th surperficial 22b of first surface 21a and second substrate 22 of this first substrate 21, and coats this first electronic building brick 20,20 '.
In addition, this first metal column 210,310,310 ', 310 ", 410 with this second metal column 220,320,320 ', 320 ", have soldering tin material 211 between 420.
Again, this first metal column 210,310,310 ', 310 " end face 210a, 210b, 210c, 310a; 310b, 310c width d, d ', d " greater than, be equal to or less than this second metal column 220,320,320 ', 320 " end face 220a; 220b, 220c, 320a, 320b, 320c width r, r ', r ".
See also Fig. 5 A to Fig. 5 C, it encapsulates the cross-sectional schematic of second embodiment of the method for making of stack apparatus for the present invention.The difference of the present embodiment and first embodiment is the crystal type that covers of first electronic building brick 20, and other technology is all identical, so repeat no more.
Shown in Fig. 5 A, its weld pad 211a in first substrate 21 of Fig. 2 A goes up and forms metal coupling 540.
Shown in Fig. 5 B; On the exposed surface of this electric contact mat 211b, electroplate and form first metal column 310; And on the exposed surface of this metal coupling 540, form solder bump 200a so that first electronic building brick 20 to be set, form primer 550 again between the first surface 21a of first electronic building brick 20 and first substrate 21.In present embodiment, this metal coupling 540 is a copper bump.
Shown in Fig. 5 C, it is for accomplish storehouse shown in Fig. 2 C to Fig. 2 G, encapsulate, plant technology such as ball in regular turn.
The present invention also provides a kind of encapsulation stack apparatus, and it comprises: the first encapsulating structure 2a, the second encapsulating structure 2b and be located at this first and second encapsulating structure 2a, the packing colloid 23 between the 2b.
The described first encapsulating structure 2a comprises: have first and second relative surperficial 21a, first substrate 21 of 21b, be located at this first surface 21a and go up and electrically connect first electronic building brick 20 of this first substrate 21 and be formed at the primer 550 between the first surface 21a of this first electronic building brick 20 and this first substrate 21 to cover crystal type.Have first metal column 310 on the first surface 21a of this first substrate 21, and have the ball of planting pad 212 on the second surface 21b of this first substrate 21, and this first metal column 310 is for electroplating the copper post that forms for combination soldered ball 24.This first electronic building brick 20 is driving component and/or passive component.
The described second encapsulating structure 2b comprises: have the 3rd and the 4th relative surperficial 22a, second substrate 22 of 22b and be located at the second electronic building brick 25a that the 3rd surperficial 22a went up and electrically connected this second substrate 22.Has second metal column 320 on the 4th surperficial 22b of this second substrate 22; And this second metal column 320 connects this first metal column 310; Making this second encapsulating structure 2b be stacked on this first encapsulating structure 2a, and this second metal column 320 is for electroplating the copper post that forms.The length h ' of this second metal column 320 can be greater than the length t ' of this first metal column 310 again; Perhaps, the length of this second metal column 320 can be equal to or less than the length of this first metal column 310.
Described packing colloid 23 is located between the 4th surperficial 22b of first surface 21a and second substrate 22 of this first substrate 21, and coats this first electronic building brick 20 and primer 550.
In addition, the first surface 21a of this first substrate 21 is provided with metal coupling 540, puts this first electronic building brick 20 to connect.This metal coupling 540 can be copper bump, and this metal coupling 540 is provided with soldering tin material (like solder bump 200a), these primer 550 these soldering tin materials of coating.
Has soldering tin material 211 between this first metal column 310 and this second metal column 320 again.
In sum, the present invention encapsulates stack apparatus and method for making thereof, by the butt joint of this first and second metal column, is beneficial to the storehouse operation; And form this metal column with storehouse and electrically connect two encapsulating structures by plating mode; So the metal material not only can not pollute the surface of this encapsulating structure; And, be vertical junction between this two encapsulating structure and put so make easily, and help fixed contact because of size variation is controlled easily.
In addition, when the height of this metal column is adjusted arbitrarily, can't increase its diameter,, therefore can not compress the laying space of circuit and electronic building brick so the area of the shared substrate surface of this metal column can not increase.
Again, when the height of this metal column increases, can't produce the bridge joint phenomenon, to promote the yield of product.
In addition, not only support between this encapsulating structure, and fill up the space between this first and second encapsulating structure, effectively avoid this substrate generation warpage by this packing colloid by this metal column.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (20)
1. an encapsulation stack apparatus is characterized in that, comprising:
First encapsulating structure, it comprises:
First substrate, it has opposite first and second surface, and has first metal column on the first surface of this first substrate; And
First electronic building brick, it is located on the first surface of this first substrate, and electrically connects this first substrate;
Second encapsulating structure, it comprises:
Second substrate; It has the 3rd relative surface and the 4th surface; And has second metal column on the 4th surface of this second substrate; This second metal column connects this first metal column, and this second encapsulating structure is stacked on this first encapsulating structure, again the length of this second metal column greater than, be equal to or less than the length of this first metal column; And
Second electronic building brick, it is located on the 3rd surface of this second substrate, and electrically connects this second substrate; And
Packing colloid, it is located between the 4th surface of first surface and second substrate of this first substrate, and coats this first electronic building brick.
2. encapsulation stack apparatus according to claim 1 is characterized in that, this first metal column is the copper post.
3. encapsulation stack apparatus according to claim 1 is characterized in that, this second metal column is the copper post.
4. encapsulation stack apparatus according to claim 1 is characterized in that, the end face width of this first metal column greater than, be equal to or less than the end face width of this second metal column.
5. encapsulation stack apparatus according to claim 1 is characterized in that, has soldering tin material between this first metal column and this second metal column.
6. encapsulation stack apparatus according to claim 1 is characterized in that, has the ball of planting pad on the second surface of this first substrate, for combining soldered ball.
7. encapsulation stack apparatus according to claim 1 is characterized in that, this first electronic building brick is driving component and/or passive component.
8. encapsulation stack apparatus according to claim 1 is characterized in that, this first electronic building brick is with the routing mode or cover this first substrate of crystal type electric connection.
9. a method for making that encapsulates stack apparatus is characterized in that, comprising:
Provide one have opposite first and a second surface first substrate; Has first metal column on the first surface of this first substrate; And first electronic building brick that electrically connects this first substrate is set on the first surface of this first substrate, forming first encapsulating structure, and provide one to have the 3rd relative surface and second substrate on the 4th surface; Has second metal column on the 4th surface of this second substrate; Again the length of this second metal column greater than, be equal to or less than the length of this first metal column, and second electronic building brick that electrically connects this second substrate is set on the 3rd surface of this second substrate, to form second encapsulating structure;
This second metal column is connected this first metal column, this second encapsulating structure is stacked on this first encapsulating structure; And
Between the 4th surface of the first surface of this first substrate and second substrate, form packing colloid, and coat this first electronic building brick.
10. the method for making of encapsulation stack apparatus according to claim 9 is characterized in that, is on this first metal column, to form soldering tin material, to combine this second metal column.
11. an encapsulation stack apparatus is characterized in that, comprising:
First encapsulating structure, it comprises:
First substrate, it has opposite first and second surface, and has first metal column on the first surface of this first substrate; And
First electronic building brick, it is located on the first surface of this first substrate to cover crystal type, and electrically connects this first substrate;
Primer, it is formed between the first surface of this first electronic building brick and this first substrate;
Second encapsulating structure, it comprises:
Second substrate; It has the 3rd relative surface and the 4th surface; And has second metal column on the 4th surface of this second substrate; This second metal column connects this first metal column, and this second encapsulating structure is stacked on this first encapsulating structure, again the length of this second metal column greater than, be equal to or less than the length of this first metal column; And
Second electronic building brick, it is located on the 3rd surface of this second substrate, and electrically connects this second substrate; And
Packing colloid, it is located between the 4th surface of first surface and second substrate of this first substrate, and coats this first electronic building brick and primer.
12. encapsulation stack apparatus according to claim 11 is characterized in that, this first substrate is provided with metal coupling, puts this first electronic building brick to connect.
13. encapsulation stack apparatus according to claim 12 is characterized in that, this metal coupling is a copper bump.
14. encapsulation stack apparatus according to claim 12 is characterized in that this metal coupling is provided with soldering tin material, this primer coats this soldering tin material.
15. encapsulation stack apparatus according to claim 11 is characterized in that, this first metal column is the copper post.
16. encapsulation stack apparatus according to claim 11 is characterized in that, this second metal column is the copper post.
17. encapsulation stack apparatus according to claim 11 is characterized in that, the end face width of this first metal column greater than, be equal to or less than the end face width of this second metal column.
18. encapsulation stack apparatus according to claim 11 is characterized in that, has soldering tin material between this first metal column and this second metal column.
19. encapsulation stack apparatus according to claim 11 is characterized in that, has the ball of planting pad on the second surface of this first substrate, for combining soldered ball.
20. encapsulation stack apparatus according to claim 11 is characterized in that, this first electronic building brick is driving component and/or passive component.
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Application publication date: 20120815 |