CN102629044A - Liquid crystal display and manufacture method thereof - Google Patents
Liquid crystal display and manufacture method thereof Download PDFInfo
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- CN102629044A CN102629044A CN2011101610716A CN201110161071A CN102629044A CN 102629044 A CN102629044 A CN 102629044A CN 2011101610716 A CN2011101610716 A CN 2011101610716A CN 201110161071 A CN201110161071 A CN 201110161071A CN 102629044 A CN102629044 A CN 102629044A
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- electrode
- lcd
- gate
- insulation course
- ito
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Abstract
The invention discloses a liquid crystal display (LCD) and a manufacture method thereof, which are used for simplifying a manufacture process of the LCD and improving generating efficiency. The LCD comprises a glass substrate (11), a public electrode (12), an insulation layer (13), a gate electrode (14), a gate insulation layer (15), an active semi-conductor layer (16), a leakage electrode (17), an insulation protecting layer (18) and a pixel electrode (19). The insulation layer (13) is arranged between the public electrode (12) and a gate electrode (14) so as to prevent the public electrode (12) from contacting with the gate electrode (14) and achieve an insulation effect.
Description
Technical field
The present invention relates to LCD (LCD) technical field, relate in particular to LCD (LCD) of senior ultra dimension field switch (AD-SDS) pattern and preparation method thereof.
Background technology
In the TFT-LCD manufacturing, wide visual angle technology has several kinds, and wherein a kind of is the LCD of senior ultra dimension field switch technology mode, senior ultra dimension field switch technology (Advanced-Super Dimensional Switching; Be called for short: the longitudinal electric field formation multi-dimensional electric field that parallel electric field that AD-SDS) is produced through same plane interior pixel electrode edge and pixel electrode layer and public electrode interlayer produce; Make between liquid crystal cell interior pixel electrode, directly over the electrode all aligned liquid-crystal molecules can both produce the rotation conversion, thereby to have improved planar orientation be the liquid crystal work efficiency and increased light transmission efficiency.Senior ultra dimension field switch technology can improve the TFT-LCD picture quality, has advantages such as high permeability, wide visual angle, high aperture, low aberration, low-response time, no water of compaction ripple (push Mura) ripple.
But the LCD of this AD-SDS pattern adopts five mask plates (mask) technology, and is two-layer at ground floor (1st) indium zinc oxide (ITO) and gate electrode (gate), forms figure separately through twice mask technology, and 1st ITO can not be contacted with gate.
Owing to need between 1st ITO public electrode (com) signal and the gate electrode to load various signals, can not conducting between 1st ITO and gate are two-layer, therefore, existing technology is during through mask manufacturing figure, this two-layer disconnection.
As shown in Figure 1, for the top plan view of the LCD of AD-SDS pattern, along A-A direction cross section, referring to Fig. 2; Be the sectional view of the LCD of AD-SDS pattern, prior art is five mask technologies, at first is 1st ITO mask; On glass substrate 1, form 1st ITO figure, form ground floor ITO 3 (ground floor ITO is positioned at below the second layer ITO, therefore in Fig. 1, does not embody); As the com electrode, gate mask forms gate electrode 2, is the switch of active components and parts.SDT mask forms raceway groove (channel) figure of data electrode (SD) 6, active semiconductor layer (active) 5 and insulating protective layer 7; PVX mask forms gate insulator (P-SiNx) 4 via holes; Through via hole, make the second layer (2nd) ITO 8 be connected with SD 6, realize pixel charging control; Be that 2nd ITO mask forms 2nd ITO 8 figures at last, control liquid crystal deflection through the electric field between control 1st ITO 3 and the 2nd ITO 8.
In sum, the making flow process of the LCD of AD-SDS pattern of the prior art needs five mask plates (mask) technology, and technological process is more, and production efficiency is not high.
Summary of the invention
The embodiment of the invention provides LCD LCD of a kind of AD-SDS pattern and preparation method thereof, in order to the making flow process of the LCD that simplifies the AD-SDS pattern, improves the formation efficiency of the LCD of AD-SDS pattern.
The LCD LCD of a kind of AD-SDS pattern that the embodiment of the invention provides; Comprise glass substrate, public electrode, gate electrode, gate insulator, active semiconductor layer, source-drain electrode, insulating protective layer and pixel electrode, this LCD also comprises: insulation course;
Wherein, insulation course contacts with gate electrode to prevent public electrode between public electrode and gate electrode, plays insulating effect.
The method for making of the LCD LCD of a kind of AD-SDS pattern that the embodiment of the invention provides comprises:
On glass substrate, form public electrode, form insulation course on the public electrode surface, plated film on insulation course with the formation gate electrode, and passes through the figure that photoetching for the first time forms gate electrode;
On gate electrode, form gate insulator, plated film on gate insulator forming active semiconductor layer and source-drain electrode respectively, and through photoetching for the second time, forms the figure of active semiconductor layer and source-drain electrode on gate insulator;
Plated film on source-drain electrode with the formation insulating protective layer, and through photoetching for the third time, forms the figure of insulating protective layer;
Plated film on insulating protective layer with the formation pixel electrode, and through the 4th photoetching, forms pattern of pixel electrodes.
The LCD LCD of a kind of AD-SDS pattern that the embodiment of the invention provides comprises: glass substrate (11), public electrode (12), insulation course (13), gate electrode (14), gate insulator (15), active semiconductor layer (16), source-drain electrode (17), insulating protective layer (18) and pixel electrode (19); Wherein, Insulation course (13) is positioned between public electrode (12) and the gate electrode (14), contacts with gate electrode (14) to prevent public electrode (12), plays insulating effect; Thereby realized having reduced one mask plate (Mask) technology of senior ultra dimension field switch (AD-SDS) technology; Can realize senior ultra dimension field switch (AD-SDS) technology of four Mask technologies, simplify the making flow process of the LCD of AD-SDS pattern, improve the formation efficiency of the LCD of AD-SDS pattern.
Description of drawings
Fig. 1 is the vertical view of the LCD of AD-SDS pattern in the prior art;
Fig. 2 is the sectional view of the A-A direction of the LCD of AD-SDS pattern in the prior art shown in Figure 1;
The vertical view of the LCD of the AD-SDS pattern that Fig. 3 provides for the embodiment of the invention;
Fig. 4 is the sectional view of the B-B direction of the LCD of AD-SDS pattern in the embodiment of the invention shown in Figure 3;
Gate electrode sections synoptic diagram after the gate figure that Fig. 5 provides for the embodiment of the invention forms;
The schematic flow sheet of the method for making of the LCD of the AD-SDS pattern that Fig. 6 provides for the embodiment of the invention.
Embodiment
The embodiment of the invention provides LCD LCD of a kind of AD-SDS pattern and preparation method thereof, in order to the making flow process of the LCD that simplifies the AD-SDS pattern, improves the formation efficiency of the LCD of AD-SDS pattern.
In the new design that the embodiment of the invention provides, as common electrode layer, need not take mask to make figure ground floor (First can be abbreviated as 1st) indium zinc oxide (ITO), only need form alundum (Al (Al on its surface
2O
3) insulation course, form the gate electrode afterwards again, that is to say, after 1st ito thin film deposition, directly plate alundum (Al (Al
2O
3) film, play insulating effect, can effectively stop gate (grid) electrode directly to contact with 1st ITO (public electrode).Need on 1st ITO, not form figure like this, just can reduce technological one mask plate of senior ultra dimension field switch (AD-SDS) (mask) technology yet, can realize mask technology four times, shorten life cycle of the product, enhance productivity.
Below in conjunction with accompanying drawing the technical scheme that the embodiment of the invention provides is described.
The top plan view of the LCD of the AD-SDS pattern that the embodiment of the invention provides; (wherein, public electrode (12) is positioned at below the pixel electrode (19), therefore in Fig. 3, does not embody public electrode (12)) as shown in Figure 3; The sectional view of the LCD of the AD-SDS pattern that obtains along B-B direction cross section is as shown in Figure 4; It is thus clear that the LCD of the AD-SDS pattern that the embodiment of the invention provides comprises:
Glass substrate (11), public electrode (12), insulation course (13), gate electrode (14), gate insulator (15), active semiconductor layer (16), source-drain electrode (17), insulating protective layer (18) and pixel electrode (19);
Wherein, insulation course (13) is positioned between public electrode (12) and the gate electrode (14), contacts with gate electrode (14) to prevent public electrode (12), plays insulating effect.
Preferably, said insulation course (13) is alundum (Al Al
2O
3, silicon oxide sio or silicon nitride SiN.
Preferably, when said insulation course (13) be Al
2O
3The time, said Al
2O
3Thickness between 10～500 nanometers.
Preferably, said gate electrode (14) is the monofilm of neodymium aluminium AlNd, aluminium Al, copper Cu, molybdenum Mo, tungsten molybdenum MoW or chromium Cr;
Perhaps, said gate electrode (14) is for by one of AlNd, Al, Cu, Mo, MoW or Cr or composite membrane that its combination in any constituted.
Preferably, said gate insulator (15) is the monofilm of silicon nitride SiNx, silicon oxide sio x or silicon oxynitride SiOxNy;
Perhaps, said gate insulator (15) is for by one of SiNx, SiOx or SiOxNy or composite membrane that its combination in any constituted.
Preferably, said source-drain electrode (17) is the monofilm of molybdenum Mo, tungsten molybdenum MoW or chromium Cr;
Perhaps, said source-drain electrode (17) is for by one of Mo, MoW or Cr or composite membrane that its combination in any constituted.
Preferably, said public electrode (12) is the monofilm of indium zinc oxide ITO or indium-zinc oxide IZO;
Perhaps, said public electrode (12) is the composite membrane by ITO and IZO constituted.
Preferably, said pixel electrode (19) is the monofilm of indium zinc oxide ITO or indium-zinc oxide IZO;
Perhaps, said pixel electrode (19) is the composite membrane by ITO and IZO constituted.
All be ITO with public electrode (12) and pixel electrode (19) below, insulation course (13) is Al
2O
3For example describes.
In the embodiment of the invention, only need in the sputtering chamber (Sputter chamber) of Al, increase oxygen (O
2) pipe arrangement, before (Al) film of aluminizing, feed O
2, form Al
2O
3Film forms insulation course 13 between gate electrode (14) and public electrode (12).
In reality generates, at first produce 1st ITO layer, when gate Al deposits, at first, feed O then through the control of equipment valve
2Gas is made Al
2O
3Film, thickness get final product (through control film formation time, i.e. its thickness of may command) between 10～500 nanometers (nm).Al
2O
3Preparation stops O after accomplishing
2Gas feeds, at Al
2O
3On deposit pure Al film again.Form the gate gate electrode figure through mask technology.
The main processes of the embodiment of the invention and prior art difference comprises:
1st ITO deposits (dep);
Al
2O
3Deposition (dep);
Gate deposits (dep);
Gate light shield (mask);
Gate etching (Etch).
Gate electrode sections after the gate figure forms is as shown in Figure 5, at first, on glass substrate, forms one deck ITO, depositing Al afterwards
2O
3, and depositing Al and Mo successively, form the gate gate electrode figure through exposure (photo), etching (Etch) technology afterwards, accomplish existing ITO and gate Twi-lithography technology with a photoetching.
In the LCD structure of existing AD-SDS pattern, 1st ITO can not have with the gate electrode and is connected, and realize through photoetching and etching technics, and in the embodiment of the invention, 1st ITO does not need etching technics, but passes through Al
2O
3Reach the purpose of cutting off 1st ITO and gate electrode.
Referring to Fig. 6, the method for making of the LCD LCD of a kind of AD-SDS pattern that the embodiment of the invention provides comprises step:
S101, on glass substrate (11), form public electrode (12);
S102, form insulation course (13) on public electrode (12) surface;
S103, on insulation course (13) plated film, forming gate electrode (14), and form the figure of gate electrode (14) through photoetching for the first time;
S104, on gate electrode (14), form gate insulator (15);
S105, on gate insulator (15) plated film, forming active semiconductor layer (16) and source-drain electrode (17) respectively, and, on gate insulator (15), form the figure of active semiconductor layer (16) and source-drain electrode (17) through photoetching for the second time;
S106, on source-drain electrode (17) plated film, forming insulating protective layer (18), and, form the figure of insulating protective layer (18) through photoetching for the third time;
S107, on insulating protective layer (18) plated film, forming pixel electrode (19), and, form the figure of pixel electrode (19) through the 4th photoetching.
Preferably, said insulation course (13) is alundum (Al Al
2O
3, silicon oxide sio or silicon nitride SiN.
Preferably, said alundum (Al Al
2O
3Thickness between 10～500 nanometers.
Preferably, said gate electrode (14) is the monofilm of neodymium aluminium AlNd, aluminium Al, copper Cu, molybdenum Mo, tungsten molybdenum MoW or chromium Cr;
Perhaps, said gate electrode (14) is for by one of AlNd, Al, Cu, Mo, MoW or Cr or composite membrane that its combination in any constituted.
Preferably, said gate insulator (15) is the monofilm of silicon nitride SiNx, silicon oxide sio x or silicon oxynitride SiOxNy;
Perhaps, said gate insulator (15) is for by one of SiNx, SiOx or SiOxNy or composite membrane that its combination in any constituted.
Preferably, said source-drain electrode (17) is the monofilm of molybdenum Mo, tungsten molybdenum MoW or chromium Cr;
Perhaps, said source-drain electrode (17) is for by one of Mo, MoW or Cr or composite membrane that its combination in any constituted.
Preferably, said public electrode (12) is the monofilm of indium zinc oxide ITO or indium-zinc oxide IZO;
Perhaps, said public electrode (12) is the composite membrane by ITO and IZO constituted.
Preferably, said pixel electrode (19) is the monofilm of indium zinc oxide ITO or indium-zinc oxide IZO;
Perhaps, said pixel electrode (19) is the composite membrane by ITO and IZO constituted.
In sum, the embodiment of the invention is utilized Al
2O
3As the insulation course of gate electrode and ITO electrode, utilize the Al oxidation technology to form Al
2O
3Insulation course has reduced mask technology one, has improved the formation efficiency of the LCD of AD-SDS pattern.
The scheme of the embodiment of the invention also can be used in the middle of the LCD of general T N pattern; Now in order to reduce mask quantity to practice thrift cost; Also there is the situation of at first making pixel electrode, grid line and grid figures in the middle of the general T N pattern, takes the scheme of the embodiment of the invention also can play identical technique effect.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. a LCD comprises glass substrate, public electrode, gate electrode, gate insulator, active semiconductor layer, source-drain electrode, insulating protective layer and pixel electrode, it is characterized in that, this LCD also comprises: insulation course;
Wherein, insulation course contacts with gate electrode to prevent public electrode between public electrode and gate electrode, plays insulating effect.
2. LCD according to claim 1 is characterized in that, said insulation course is alundum (Al Al
2O
3, silicon oxide sio or silicon nitride SiN.
3. LCD according to claim 2 is characterized in that, when said insulation course is Al
2O
3The time, said Al
2O
3Thickness between 10～500 nanometers.
4. according to claim 1,2 or 3 described LCD, it is characterized in that said gate electrode is the monofilm of neodymium aluminium AlNd, aluminium Al, copper Cu, molybdenum Mo, tungsten molybdenum MoW or chromium Cr;
Perhaps, said gate electrode is for by one of AlNd, Al, Cu, Mo, MoW or Cr or composite membrane that its combination in any constituted.
5. according to claim 1,2 or 3 described LCD, it is characterized in that said gate insulator is the monofilm of silicon nitride SiNx, silicon oxide sio x or silicon oxynitride SiOxNy;
Perhaps, said gate insulator is for by one of SiNx, SiOx or SiOxNy or composite membrane that its combination in any constituted.
6. according to claim 1,2 or 3 described LCD, it is characterized in that said source-drain electrode is the monofilm of molybdenum Mo, tungsten molybdenum MoW or chromium Cr;
Perhaps, said source-drain electrode is for by one of Mo, MoW or Cr or composite membrane that its combination in any constituted.
7. according to claim 1,2 or 3 described LCD, it is characterized in that said public electrode is the monofilm of indium zinc oxide ITO or indium-zinc oxide IZO;
Perhaps, said public electrode is the composite membrane by ITO and IZO constituted.
8. according to claim 1,2 or 3 described LCD, it is characterized in that said pixel electrode is the monofilm of indium zinc oxide ITO or indium-zinc oxide IZO;
Perhaps, said pixel electrode is the composite membrane by ITO and IZO constituted.
9. the method for making of a LCD LCD is characterized in that, this method comprises:
On glass substrate, form public electrode, form insulation course on the public electrode surface, plated film on insulation course with the formation gate electrode, and passes through the figure that photoetching for the first time forms gate electrode;
On gate electrode, form gate insulator, plated film on gate insulator forming active semiconductor layer and source-drain electrode respectively, and through photoetching for the second time, forms the figure of active semiconductor layer and source-drain electrode on gate insulator;
Plated film on source-drain electrode with the formation insulating protective layer, and through photoetching for the third time, forms the figure of insulating protective layer;
Plated film on insulating protective layer with the formation pixel electrode, and through the 4th photoetching, forms pattern of pixel electrodes.
10. method according to claim 9 is characterized in that, said insulation course is alundum (Al Al
2O
3, silicon oxide sio or silicon nitride SiN.
Priority Applications (1)
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|---|---|---|---|
| CN2011101610716A CN102629044A (en) | 2011-06-15 | 2011-06-15 | Liquid crystal display and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101610716A CN102629044A (en) | 2011-06-15 | 2011-06-15 | Liquid crystal display and manufacture method thereof |
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| CN102629044A true CN102629044A (en) | 2012-08-08 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6362032B1 (en) * | 1999-04-23 | 2002-03-26 | Hyundai Display Technology Inc. | Method for manufacturing fringe field switching mode liquid crystal display |
| CN101140369A (en) * | 2006-09-08 | 2008-03-12 | 爱普生映像元器件有限公司 | Liquid crystal display device and electronic apparatus |
| CN101144953A (en) * | 2007-11-08 | 2008-03-19 | 友达光电股份有限公司 | Liquid crystal display panel |
| CN101364603A (en) * | 2007-08-10 | 2009-02-11 | 北京京东方光电科技有限公司 | TFT array substrate construction and manufacturing method thereof |
| CN101533186A (en) * | 2008-01-11 | 2009-09-16 | 爱普生映像元器件有限公司 | Liquid crystal device and electronic apparatus |
| JP2010014846A (en) * | 2008-07-02 | 2010-01-21 | Epson Imaging Devices Corp | Liquid crystal display panel |
-
2011
- 2011-06-15 CN CN2011101610716A patent/CN102629044A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6362032B1 (en) * | 1999-04-23 | 2002-03-26 | Hyundai Display Technology Inc. | Method for manufacturing fringe field switching mode liquid crystal display |
| CN101140369A (en) * | 2006-09-08 | 2008-03-12 | 爱普生映像元器件有限公司 | Liquid crystal display device and electronic apparatus |
| CN101364603A (en) * | 2007-08-10 | 2009-02-11 | 北京京东方光电科技有限公司 | TFT array substrate construction and manufacturing method thereof |
| CN101144953A (en) * | 2007-11-08 | 2008-03-19 | 友达光电股份有限公司 | Liquid crystal display panel |
| CN101533186A (en) * | 2008-01-11 | 2009-09-16 | 爱普生映像元器件有限公司 | Liquid crystal device and electronic apparatus |
| JP2010014846A (en) * | 2008-07-02 | 2010-01-21 | Epson Imaging Devices Corp | Liquid crystal display panel |
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Application publication date: 20120808 |