CN102607710B - Tester for junction temperature of compound semiconductor microwave power chip - Google Patents
Tester for junction temperature of compound semiconductor microwave power chip Download PDFInfo
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- CN102607710B CN102607710B CN 201210085230 CN201210085230A CN102607710B CN 102607710 B CN102607710 B CN 102607710B CN 201210085230 CN201210085230 CN 201210085230 CN 201210085230 A CN201210085230 A CN 201210085230A CN 102607710 B CN102607710 B CN 102607710B
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- junction temperature
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 150000001875 compounds Chemical class 0.000 title claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000009434 installation Methods 0.000 claims description 11
- 230000002265 prevention Effects 0.000 claims description 4
- 238000012360 testing method Methods 0.000 abstract description 41
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Abstract
The invention discloses a tester for a junction temperature of a compound semiconductor microwave power chip. The tester comprises two bases arranged symmetrically, wherein each base is fixedly provided with a coaxial micro-strip adapter and s strip line, and the two bases are fixedly connected by two beams distributed symmetrically; each beam is provided with a bolt; the strip line metal of eachstrip line is welded with a contact type pressing plate; a chip carrier is arranged between the two bases; and the contact type pressing plate is connected with a radio frequency port of the chip carrier. The tester has the following beneficial effects: the entire replacement of the chip and the test base are needed not to repeatedly mount or dismount the cable, and therefore, the test precision and the test efficiency can be improved; the chip carrier can be very thin, and therefore, the tested thermal resistance is closer to the thermal resistance of the chip, and the test accuracy is ensured; the thickness of the bases can be reduced as the strip line forms an angle of 30-60 degrees with the horizontal plane, and simultaneously, the length of the contact type pressing plate is reduced,and the radio frequency transmission performance is improved.
Description
Technical field
The present invention relates to a kind of proving installation, especially a kind of compound semiconductor microwave power chip junction temperature proving installation belongs to the technical field of measurement and test of microwave, millimeter wave components and parts.
Background technology
The compound semiconductor materials such as GaAs, GaN and SiC have the good characteristics such as the forbidden band is wide, high heat conductance, high carrier saturation drift velocity, so they are widely applied in the semiconductor microwave power device is made.
The compound semiconductor materials such as GaAs, GaN and SiC can be made into the microwave power chip, and the microwave power chip becomes device through behind the proper mating.The slip-stick artist uses the infrared test system that temperature test is carried out in the hot zone of microwave power chip usually, in order to provide criteria in application for the follow-up assembling of device.They run into a problem in test process: the very thin thickness of microwave power chip, usually only have between 80 microns～100 microns, in order to test junction temperature, usually need to be with its sintering in the encapsulation of carrier or other form, and by the encapsulation of carrier or other form device is powered up work, carrier is thinner, thermal resistance calculation is more near the thermal resistance of microwave power chip, but when reality is tested the junction temperature characteristic of microwave power chip, need external microwave test transit ports (such as coaxial interface), connection cable, instrument etc., need to greatly thicken the encapsulation that turns prestowage body or other form of microwave power chip, cause the actual junction temperature that records to depart from the purpose junction temperature, thereby affect the accuracy of final microwave power chip thermal resistance calculation.
At present, common method for testing junction temperature is to make simple testing base, and device is installed on the base, according to the actual microwave port case of device, in testing base little coaxial X-over and DC feedback terminal be with is installed.During test, whole testing base is placed on the infrared junction temperature test board, littlely is with coaxial X-over to link to each other with microwave test instrument or load by cable, the test that links to each other with direct supply of DC feedback terminal.Because testing base is very thick, usually have more than 10 millimeters, the hot zone distance from infrared junction temperature thermostatic platform to device is very long.After test is finished, more whole testing base is unloaded down from thermostatic platform.There is following shortcoming in this solution: at first increased the linker with direct supply and test instrumentation when test, reduced test job efficient; Secondly, after test is finished, also to there be again one Uninstaller that measured piece is taken off, reduce work efficiency; At last, because testing base is very thick, the thermal resistance of measured piece is affected.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of compound semiconductor microwave power chip junction temperature proving installation that can improve measuring accuracy and testing efficiency.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of compound semiconductor microwave power chip junction temperature proving installation, comprise symmetrically arranged two bases, be fixed with respectively coaxial microband adapter and band line on each base, described two bases are fixedly connected with by two symmetrical crossbeams; Be respectively equipped with bolt on described each crossbeam; All be welded with the contact compressing tablet on described each band line metal with line; Be provided with chip carrier between described two bases; Described contact compressing tablet is connected with the prevention at radio-frequency port of chip carrier.
The quantity of the bolt that described each crossbeam is provided with is 2, and crossbeam is provided with the threaded hole suitable with bolt.
Described is 30 °～60 ° with the angle between line and surface level.
When using said apparatus that the microwave power chip is carried out the junction temperature test, whole device pedestal is placed on the thermostatic platform, then microwave power chip to be measured is positioned on the corresponding chip carrier, with chip carrier place between two bases, under four transom bolts, the swing bolster bolt, make bottom surface and the thermostatic platform good contact and fixing of chip carrier, one end of test cable is connected with test instrumentation, the other end is connected with two coaxial microband adapters, can realize like this electrical connection of microwave power chip to be measured and test instrumentation.After test is finished, rotate four transom bolts and chip carrier can be separated with proving installation, simple to operate, easy to use.
Beneficial effect of the present invention is as follows: proving installation of the present invention can be realized the junction temperature test to the microwave power chip accurately and efficiently, this device does not need to come integral replacing chip and testing base by repeatedly loading and unloading cable, thereby can improve measuring accuracy and testing efficiency; Chip carrier is satisfying under the prerequisite that requirement of mechanical strength and chip thermal expansivity be complementary, and that can make is very thin, thereby records thermal resistance closer to the thermal resistance of chip, has guaranteed test accuracy; To be with line can reduce base thickness horizontal by 30 °～60 ° angles, reduce simultaneously the length of contact compressing tablet, improve the radio frequency transmission performance.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is structural representation of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Wherein, 1, base, 2, the coaxial microband adapter, 3, the band line, 4, bolt, 5, crossbeam, 6, chip carrier, 7, chip, 8, contact compressing tablet.
Embodiment
Embodiment as shown in Figure 1 and Figure 2 as can be known, compound semiconductor microwave power chip junction temperature proving installation of the present invention, comprise symmetrically arranged two bases 1, be fixed with respectively coaxial microband adapter 2 and band line 3 on each base 1, described two bases 1 are fixedly connected with by two symmetrical crossbeams 5; Be respectively equipped with bolt 4 on described each crossbeam 5; All be welded with contact compressing tablet 8 on described each band line metal with line 3; Be provided with chip carrier 6 between described two bases 1; Described contact compressing tablet 8 is connected with the prevention at radio-frequency port of chip carrier 6.The quantity of the bolt 4 that described each crossbeam 5 is provided with is 2, and crossbeam 5 is provided with the threaded hole suitable with bolt 4.Described is 30 °～60 ° with the angle between line 3 and surface level.The part that above-mentioned contact compressing tablet 8 leans out with line has a downwarp, so that the prevention at radio-frequency port of being connected with chip carrier connects.
When using said apparatus that the microwave power chip is carried out the junction temperature test, whole device pedestal 1 is placed on the thermostatic platform, then microwave power chip to be measured is positioned on the corresponding chip carrier 6, with chip carrier 6 place between two bases 1, under four transom bolts 4, swing bolster bolt 4, make bottom surface and the thermostatic platform good contact and fixing of chip carrier 6, one end of test cable is connected with test instrumentation, the other end is connected with two coaxial microband adapters 2, can realize like this electrical connection of microwave power chip to be measured and test instrumentation.After test is finished, rotate four transom bolts 4 and chip carrier 6 can be separated with proving installation, simple to operate, easy to use.
Claims (2)
1. compound semiconductor microwave power chip junction temperature proving installation, it is characterized in that, comprise symmetrically arranged two bases (1), be fixed with respectively coaxial microband adapter (2) and band line (3) on each base (1), described two bases (1) are fixedly connected with by symmetrical two crossbeams (5); Be respectively equipped with bolt (4) on described each crossbeam (5); All be welded with contact compressing tablet (8) on the band line metal of described each band line (3); Be provided with chip carrier (6) between described two bases (1); Described contact compressing tablet (8) is connected with the prevention at radio-frequency port of chip carrier (6); Angle between described band line (3) and surface level is 30 °～60 °.
2. compound semiconductor microwave power chip junction temperature proving installation according to claim 1 is characterized in that, the quantity of the bolt (4) that described each crossbeam (5) is provided with is 2, and crossbeam (5) is provided with the threaded hole suitable with bolt (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210085230 CN102607710B (en) | 2012-03-28 | 2012-03-28 | Tester for junction temperature of compound semiconductor microwave power chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210085230 CN102607710B (en) | 2012-03-28 | 2012-03-28 | Tester for junction temperature of compound semiconductor microwave power chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102607710A CN102607710A (en) | 2012-07-25 |
| CN102607710B true CN102607710B (en) | 2013-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201210085230 Expired - Fee Related CN102607710B (en) | 2012-03-28 | 2012-03-28 | Tester for junction temperature of compound semiconductor microwave power chip |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102967814B (en) * | 2012-10-19 | 2015-05-20 | 西安电子科技大学 | Device and method for testing performance degradation caused by transistor lattice deformation |
| CN104375028A (en) * | 2014-11-07 | 2015-02-25 | 江苏博普电子科技有限责任公司 | Device for verifying performance of test board used for C-waveband GaN microwave power device |
| CN105699826A (en) * | 2016-04-06 | 2016-06-22 | 中国电子科技集团公司第十三研究所 | Microwave device automatic testing system and method |
| CN114112113A (en) * | 2021-10-08 | 2022-03-01 | 中国电子科技集团公司第十三研究所 | Thermal resistance transfer standard component and thermal resistance measuring instrument calibration method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762612B2 (en) * | 2001-06-20 | 2004-07-13 | Advantest Corp. | Probe contact system having planarity adjustment mechanism |
| CN202485803U (en) * | 2012-03-28 | 2012-10-10 | 中国电子科技集团公司第十三研究所 | Junction temperature testing device for compound semiconductor microwave power chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10300782A (en) * | 1997-04-25 | 1998-11-13 | Mitsubishi Materials Corp | Probe apparatus and its assembly |
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2012
- 2012-03-28 CN CN 201210085230 patent/CN102607710B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762612B2 (en) * | 2001-06-20 | 2004-07-13 | Advantest Corp. | Probe contact system having planarity adjustment mechanism |
| CN202485803U (en) * | 2012-03-28 | 2012-10-10 | 中国电子科技集团公司第十三研究所 | Junction temperature testing device for compound semiconductor microwave power chip |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平10-300782A 1998.11.13 |
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| CN102607710A (en) | 2012-07-25 |
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