CN102607710A - Tester for junction temperature of compound semiconductor microwave power chip - Google Patents
Tester for junction temperature of compound semiconductor microwave power chip Download PDFInfo
- Publication number
- CN102607710A CN102607710A CN2012100852303A CN201210085230A CN102607710A CN 102607710 A CN102607710 A CN 102607710A CN 2012100852303 A CN2012100852303 A CN 2012100852303A CN 201210085230 A CN201210085230 A CN 201210085230A CN 102607710 A CN102607710 A CN 102607710A
- Authority
- CN
- China
- Prior art keywords
- bases
- chip
- microwave power
- test
- junction temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 150000001875 compounds Chemical class 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000009434 installation Methods 0.000 claims description 12
- 230000002265 prevention Effects 0.000 claims description 4
- 238000012360 testing method Methods 0.000 abstract description 40
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Images
Abstract
The invention discloses a tester for a junction temperature of a compound semiconductor microwave power chip. The tester comprises two bases arranged symmetrically, wherein each base is fixedly provided with a coaxial micro-strip adapter and s strip line, and the two bases are fixedly connected by two beams distributed symmetrically; each beam is provided with a bolt; the strip line metal of each strip line is welded with a contact type pressing plate; a chip carrier is arranged between the two bases; and the contact type pressing plate is connected with a radio frequency port of the chip carrier. The tester has the following beneficial effects: the entire replacement of the chip and the test base are needed not to repeatedly mount or dismount the cable, and therefore, the test precision and the test efficiency can be improved; the chip carrier can be very thin, and therefore, the tested thermal resistance is closer to the thermal resistance of the chip, and the test accuracy is ensured; the thickness of the bases can be reduced as the strip line forms an angle of 30-60 degrees with the horizontal plane, and simultaneously, the length of the contact type pressing plate is reduced, and the radio frequency transmission performance is improved.
Description
Technical field
The present invention relates to a kind of proving installation, especially a kind of compound semiconductor microwave power chip junction temperature proving installation belongs to the technical field of measurement and test of microwave, millimeter wave components and parts.
Background technology
Compound semiconductor materials such as GaAs, GaN and SiC have good characteristics such as the forbidden band is wide, high heat conductance, high carrier saturation drift velocity, so they are widely applied in the semiconductor microwave power device is made.
Compound semiconductor materials such as GaAs, GaN and SiC can be made into the microwave power chip, and the microwave power chip is through suitably becoming device after the assembling.The slip-stick artist uses the infrared test system that temperature test is carried out in the hot zone of microwave power chip usually, so that the application foundation is provided for the follow-up assembling of device.They run into a problem in test process: the very thin thickness of microwave power chip; Usually have only between 80 microns～100 microns, in order to test junction temperature, usually need be in the encapsulation of carrier or other form with its sintering; And device is powered up work through the encapsulation of carrier or other form; Carrier is thin more, and thermal resistance calculation is more near the thermal resistance of microwave power chip, but actual when the junction temperature characteristic of microwave power chip is tested; Need external microwave test transit ports (like coaxial interface), connection cable, instrument etc.; Need thicken the commentaries on classics prestowage body of microwave power chip or the encapsulation of other form greatly, cause the actual junction temperature that records to depart from the purpose junction temperature, thereby influence the accuracy of final microwave power chip thermal resistance calculation.
At present, common junction temperature method of testing is to make simple testing base, and device is installed on the base, according to the actual microwave port case of device, little coaxial X-over and DC feedback terminal be with is installed on testing base.During test, whole testing base is placed on the infrared junction temperature test board, littlely is with coaxial X-over to link to each other with microwave test instrument or load through cable, the test that links to each other with direct supply of DC feedback terminal.Because testing base is very thick, have usually more than 10 millimeters, the hot zone distance from infrared junction temperature constant temperature platform to device is very long.Test is unloaded whole testing base down after accomplishing again from the constant temperature platform.There is following shortcoming in this solution: at first when test, increased the linker with direct supply and test instrumentation, reduced test job efficient; Secondly, after test is accomplished, also to there be one Uninstaller to take off measured piece again, reduce work efficiency; At last, because testing base is very thick, the thermal resistance of measured piece is affected.
Summary of the invention
The technical matters that the present invention will solve provides a kind of compound semiconductor microwave power chip junction temperature proving installation that can improve measuring accuracy and testing efficiency.
For solving the problems of the technologies described above; The technical scheme that the present invention taked is: a kind of compound semiconductor microwave power chip junction temperature proving installation; Comprise symmetrically arranged two bases; On each base, be fixed with coaxial microband adapter and band line respectively, said two bases are fixedly connected through two crossbeams that are symmetrically distributed; Be respectively equipped with bolt on said each crossbeam; All be welded with the contact compressing tablet on the band line metal of said each band line; Be provided with chip carrier between said two bases; Said contact compressing tablet is connected with the prevention at radio-frequency port of chip carrier.
The quantity of the bolt that said each crossbeam is provided with is 2, and crossbeam is provided with the threaded hole suitable with bolt.
Angle between said band line and surface level is 30 °～60 °.
When using said apparatus that the microwave power chip is carried out the junction temperature test; Whole device pedestal is placed on the constant temperature platform; Then microwave power chip to be measured is positioned on the relevant chip carrier, with chip carrier place between two bases, under four transom bolts, the swing bolster bolt; The bottom surface of chip carrier is well contacted and fixing with the constant temperature platform; One end of test cable is connected with test instrumentation, and the other end is connected with two coaxial microband adapters, can realize being electrically connected of microwave power chip to be measured and test instrumentation like this.Test is rotated four transom bolts and can chip carrier be separated with proving installation after accomplishing, and is simple to operate, easy to use.
Beneficial effect of the present invention is following: proving installation of the present invention can be realized the junction temperature test to the microwave power chip accurately and efficiently; This device need not come integral replacing chip and testing base through loading and unloading cable repeatedly, thereby can improve measuring accuracy and testing efficiency; Chip carrier is satisfying under the prerequisite that requirement of mechanical strength and chip thermal expansivity be complementary, and that can make is extremely thin, thereby records the thermal resistance that thermal resistance more approaches chip, has guaranteed test accuracy; To be with line can reduce base thickness, reduce the length of contact compressing tablet simultaneously, improve the radio frequency transmission performance horizontal by 30 °～60 ° angles.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation.
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Wherein, 1, base, 2, the coaxial microband adapter, 3, the band line, 4, bolt, 5, crossbeam, 6, chip carrier, 7, chip, 8, contact compressing tablet.
Embodiment
Can know like Fig. 1, embodiment shown in Figure 2; Compound semiconductor microwave power chip junction temperature proving installation of the present invention; Comprise symmetrically arranged two bases 1; On each base 1, be fixed with coaxial microband adapter 2 and band line 3 respectively, said two bases 1 are fixedly connected through two crossbeams 5 that are symmetrically distributed; Be respectively equipped with bolt 4 on said each crossbeam 5; All be welded with contact compressing tablet 8 on the band line metal of said each band line 3; Be provided with chip carrier 6 between said two bases 1; Said contact compressing tablet 8 is connected with the prevention at radio-frequency port of chip carrier 6.The quantity of the bolt 4 that said each crossbeam 5 is provided with is 2, and crossbeam 5 is provided with the threaded hole suitable with bolt 4.Angle between said band line 3 and surface level is 30 °～60 °.The part that above-mentioned contact compressing tablet 8 leans out the band line has a downwarp, so that be connected with the prevention at radio-frequency port of chip carrier 6.
When using said apparatus that the microwave power chip is carried out the junction temperature test; Whole device pedestal 1 is placed on the constant temperature platform; Then microwave power chip to be measured is positioned on the relevant chip carrier 6, with chip carrier 6 place between two bases 1, under four transom bolts 4, swing bolster bolt 4; The bottom surface of chip carrier 6 is well contacted and fixing with the constant temperature platform; One end of test cable is connected with test instrumentation, and the other end is connected with two coaxial microband adapters 2, can realize being electrically connected of microwave power chip to be measured and test instrumentation like this.Test is rotated four transom bolts 4 and can chip carrier 6 be separated with proving installation after accomplishing, and is simple to operate, easy to use.
Claims (3)
1. compound semiconductor microwave power chip junction temperature proving installation; It is characterized in that; Comprise symmetrically arranged two bases (1); On each base (1), be fixed with coaxial microband adapter (2) and band line (3) respectively, said two bases (1) are fixedly connected through two crossbeams (5) that are symmetrically distributed; Be respectively equipped with bolt (4) on said each crossbeam (5); All be welded with contact compressing tablet (8) on the band line metal of said each band line (3); Be provided with chip carrier (6) between said two bases (1); Said contact compressing tablet (8) is connected with the prevention at radio-frequency port of chip carrier (6).
2. compound semiconductor microwave power chip junction temperature proving installation according to claim 1 is characterized in that the quantity of the bolt (4) that said each crossbeam (5) is provided with is 2, and crossbeam (5) is provided with and the suitable threaded hole of bolt (4).
3. compound semiconductor microwave power chip junction temperature proving installation according to claim 1 is characterized in that the angle between said band line (3) and surface level is 30 °～60 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210085230 CN102607710B (en) | 2012-03-28 | 2012-03-28 | Tester for junction temperature of compound semiconductor microwave power chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210085230 CN102607710B (en) | 2012-03-28 | 2012-03-28 | Tester for junction temperature of compound semiconductor microwave power chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102607710A true CN102607710A (en) | 2012-07-25 |
| CN102607710B CN102607710B (en) | 2013-10-23 |
Family
ID=46525291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210085230 Expired - Fee Related CN102607710B (en) | 2012-03-28 | 2012-03-28 | Tester for junction temperature of compound semiconductor microwave power chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102607710B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102967814A (en) * | 2012-10-19 | 2013-03-13 | 西安电子科技大学 | Device and method for testing performance degradation caused by transistor lattice deformation |
| CN104375028A (en) * | 2014-11-07 | 2015-02-25 | 江苏博普电子科技有限责任公司 | Device for verifying performance of test board used for C-waveband GaN microwave power device |
| CN105699826A (en) * | 2016-04-06 | 2016-06-22 | 中国电子科技集团公司第十三研究所 | Microwave device automatic testing system and method |
| CN114112113A (en) * | 2021-10-08 | 2022-03-01 | 中国电子科技集团公司第十三研究所 | Thermal resistance transfer standard component and thermal resistance measuring instrument calibration method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10300782A (en) * | 1997-04-25 | 1998-11-13 | Mitsubishi Materials Corp | Probe apparatus and its assembly |
| US6762612B2 (en) * | 2001-06-20 | 2004-07-13 | Advantest Corp. | Probe contact system having planarity adjustment mechanism |
| CN202485803U (en) * | 2012-03-28 | 2012-10-10 | 中国电子科技集团公司第十三研究所 | Junction temperature testing device for compound semiconductor microwave power chip |
-
2012
- 2012-03-28 CN CN 201210085230 patent/CN102607710B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10300782A (en) * | 1997-04-25 | 1998-11-13 | Mitsubishi Materials Corp | Probe apparatus and its assembly |
| US6762612B2 (en) * | 2001-06-20 | 2004-07-13 | Advantest Corp. | Probe contact system having planarity adjustment mechanism |
| CN202485803U (en) * | 2012-03-28 | 2012-10-10 | 中国电子科技集团公司第十三研究所 | Junction temperature testing device for compound semiconductor microwave power chip |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102967814A (en) * | 2012-10-19 | 2013-03-13 | 西安电子科技大学 | Device and method for testing performance degradation caused by transistor lattice deformation |
| CN102967814B (en) * | 2012-10-19 | 2015-05-20 | 西安电子科技大学 | Device and method for testing performance degradation caused by transistor lattice deformation |
| CN104375028A (en) * | 2014-11-07 | 2015-02-25 | 江苏博普电子科技有限责任公司 | Device for verifying performance of test board used for C-waveband GaN microwave power device |
| CN105699826A (en) * | 2016-04-06 | 2016-06-22 | 中国电子科技集团公司第十三研究所 | Microwave device automatic testing system and method |
| CN114112113A (en) * | 2021-10-08 | 2022-03-01 | 中国电子科技集团公司第十三研究所 | Thermal resistance transfer standard component and thermal resistance measuring instrument calibration method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102607710B (en) | 2013-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102607710B (en) | Tester for junction temperature of compound semiconductor microwave power chip | |
| CN202485803U (en) | Junction temperature testing device for compound semiconductor microwave power chip | |
| WO2020052651A1 (en) | Gluing device for battery production | |
| CN201622288U (en) | Clamp for radio-frequency testing of semiconductor chip | |
| CN105988069B (en) | Testing and aging device and method for semiconductor laser | |
| US20200309623A1 (en) | Ultrasonic testing device and method for connection force of interference fit | |
| CN102788945A (en) | Universal power semiconductor module fixture | |
| CN105116175A (en) | General broadband microwave component text fixture based on adaptive pressing sheet | |
| CN206300974U (en) | A kind of low pass filter test fixture | |
| CN109406843A (en) | A kind of debugging clamper and adjustment method of dielectric waveguide filter | |
| CN107389984B (en) | Working method of high-power transistor test fixture | |
| CN205720460U (en) | For semiconductor laser optical fiber coupling module measurement jig | |
| CN108645366B (en) | Experimental device for measuring non-parallelism of two end faces of rock | |
| CN109669118A (en) | A kind of adjustable microwave circuit test fixture | |
| CN206270264U (en) | A kind of microwave Surface Mount component Rapid non-destructive testing device | |
| CN206132816U (en) | Microwave power enlargies quick test fixture of module | |
| CN208621655U (en) | Micro-strip device test fixture | |
| CN202025039U (en) | On-line test apparatus of large-scale production of ultrahigh frequency radio frequency identification tag antenna | |
| CN208655863U (en) | The waveguide junction circulator power test system of low-power source demand | |
| CN104764909B (en) | Convenient chip test base available for extremely low temperature measurement | |
| CN204330484U (en) | A kind of fixture of weld metal crunch seal tensile strength test block | |
| CN203479585U (en) | Adjustable specimen fixing bracket | |
| CN106597251B (en) | Microwave chip screening device and screening method thereof | |
| CN205749694U (en) | A kind of antenna measurement fixture | |
| CN203776140U (en) | Cut-tobacco drier thin-plate temperature measuring device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131023 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |