CN102602879B - Two step corrosion manufacture methods of resonance type accelerometer resonance beam and brace summer - Google Patents
Two step corrosion manufacture methods of resonance type accelerometer resonance beam and brace summer Download PDFInfo
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- CN102602879B CN102602879B CN201210059372.2A CN201210059372A CN102602879B CN 102602879 B CN102602879 B CN 102602879B CN 201210059372 A CN201210059372 A CN 201210059372A CN 102602879 B CN102602879 B CN 102602879B
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Abstract
The invention discloses two step corrosion manufacture methods of a kind of resonance type accelerometer resonance beam and brace summer, belong to microelectromechanical systems field.The object of the invention is to produce on same silicon chip (3) not at conplane resonance beam (1) and brace summer (2), resonance beam (1) is positioned at substrate top surface, and the neutral surface of brace summer (2) and the center of gravity of mass (4) are at same plane.Feature in manufacturing technology is: first adopting has mask corrosion technique to erode to certain depth from resonance beam (1) back side; Then tow sides photoetching, corrosion or etching etching tank (6) the corrosion masking layer (7) except resonance beam (1) and mass (4) convex corner compensation part; Finally, adopt mask and combine without mask corrosion and realize the one-shot forming of resonance beam (1) and brace summer (2), the thickness of resonance beam (1) and brace summer (2) reaches setting value simultaneously.This manufacture method makes the resonance type accelerometer structure of making simple, has less intersecting axle interference.
Description
Technical field
The present invention relates to the resonance beam of resonance type accelerometer and the manufacture method of brace summer, particularly a kind of mask-manufacture the resonance beam of resonance type accelerometer and two step caustic solutions of brace summer without mask corrosion technology of utilizing, belong to microelectromechanical systems (Micro-Electro-MechanicalSystems, MEMS) field.
Background technology
Micro accelerometer is the important mechanical quantity sensor of a class.As far back as the end of the sixties in last century, people just begin one's study one dimension minitype silicon accelerometer.Start the large-scale production of one dimension micro accelerometer the end of the eighties.Enter into the nineties, along with development and the demand that is military, commercial market of science and technology, begin one's study three-dimensional micro accelerometer, is applied to the fields such as military affairs, automotive electronics, industrial automation, Robotics, consumer electronics product.Due to micro accelerometer have that volume is little, lightweight, power consumption and cost is low, overload capacity is strong, easy of integration, can the advantage such as large-scale mass production, not only become the core parts of Micro Inertial Measurement Unit, be also applied to rapidly the civil areas such as wagon control, high-speed railway, robot, industrial automation, mine locating, toy, medical treatment.
Micro accelerometer is the sensor of the inertia force acceleration measurement utilizing sensing quality.Linear accelerometer and pendulous accelerometer can be divided into according to the motion mode of Detection job; Divide according to signal detecting mode and can be pressure resistance type, condenser type, tunnel current formula, resonant mode, heat convection type, piezoelectric accelerometer.Open loop deviation type and closed loop force-balance accelerometer can be divided into according to or without feedback signal.According to the quantity of sensitive axes, be divided into single shaft, twin shaft and three axis accelerometer.After the nineties in last century; along with the demand of the development of MEMS technology and military affairs, commercial market; the acceleration test of single direction can not meet the demand of each side; accelerometer develops to three-dimensional; for detection space acceleration, be the civilian projects services such as military defense project and automobile shockproof protection, self-actuating brake, medical treatment such as satellite navigation, missile guidance, shell orientation.Three axle micro accelerometers can measure three mutually orthogonal axial accelerations simultaneously.Its measuring principle comprises condenser type, pressure resistance type, piezoelectric type and heat convection type, can be divided into multimass block and single mass system according to mass number.
Resonant mode acceleration transducer utilizes inertia force to change axial stress and the strain of resonator, thus causes resonant frequency to change, and the variable quantity detecting resonant frequency obtains the size of acceleration.Resonant mode acceleration transducer will can be directly converted to stability and the higher frequency signal of reliability by measuring acceleration, and not easily produces distortion in transmitting procedure, without the need to through A/D converter can with digital display circuit interface.In addition, resonant mode acceleration transducer wide dynamic range, sensitivity and resolution ratio is high, good stability, certainty of measurement are high, reached the sensitivity of 1KHz/g and the noise level of 2 μ g, can meet the high performance requirements to acceleration transducer.Electric heating excitation/piezoresistive detection resonant mode the acceleration transducer of ChristianBurrer report in 1996 is made up of mass, support cantilever beam and resonance beam.Sensitive-mass block is suspended on its centerline axis parallel and one end of two of symmetry brace summers, and the brace summer other end is fixed on substrate.Resonance beam one end is connected with sensitive-mass block, and the other end is fixed on substrate.When there being the acceleration on vertical substrates surface to act on sensitive-mass block, mass will move in the vertical direction, and cause resonance beam to produce and stretch or compression strain, change the intrinsic frequency of resonance beam, sensitivity is 250Hz/g.
The same year D.W.Burns combination micromechanics and surface micromechanical process made a kind of polysilicon micro-beam resonant mode acceleration transducer of static excitation/piezoresistive detection, sensor comprises mass, upper-lower seal lid, supports spring beam, two coaxial resonance beam and detects the piezo-resistance composition of resonance beam strain.Mass and spring beam be symmetrical structure to reduce the interference of intersecting axle, upper and lower seal cover board provides extrusion die damping and overload protection for mass.Can applies Dc bias.The drive electrode of resonance beam applies small size alternating voltage, the static-electronic driving resonance beam vibration of generation.The piezo-resistance of the clamped end of resonance beam measures the strain that beam vibration causes, and feeds back to drive electrode after amplification, and resonance beam is vibrated in resonant frequency.Two resonance beam are operated in differential mode, and acceleration makes the resonant frequency of a resonance beam increase, and another one reduces, to improve sensitivity and to suppress common-mode signal (as Temperature cross-over sensitivity).The range of sensor can be regulated by the size of brace summer.To the range of 20g, the length of resonance beam, width and thickness are respectively 200 μm, 40 μm and 2 μm, and resonant frequency is 500KHz, and the sensitivity of Z axis acceleration detection is up to 1750Hz/g.
Seoul national university of Korea S Byeung-leu1Lee in 2000 etc. adopt surface micromechanical process to have developed a kind of differential resonant mode single-axis acceleration sensors (DRXL) of inertial navigation level, and its sensing element is the torsion beam resonator of static excitation.The acceleration analysis of vertical direction utilizes electrostatic stiffness mediating effect+6, the inertia force produced by acceleration changes the electrostatic force that spring beam bears, realize the change to stiffness coefficient, thus cause the change of resonant frequency, and adopt the mass of two shape complementarities to realize variate.In face, acceleration transducer adopts end with the double-ended tuning fork of mass, utilizes inertia force to change the axial force of tuning fork, thus changes resonant frequency.In face, the resonant frequency of acceleration is 23.4KHz, and sensitivity is up to 128Hz/g, and bandwidth is 110Hz, and precision is 5.2 μ g; The resonant frequency of vertical direction is 12KHz, and sensitivity is up to 70Hz/g, and bandwidth is 100Hz, and precision is 2.5 μ g.
Within 1997, TreyA.Roessig adopts surface micromechanical process to make a kind of resonant mode acceleration transducer of new structure.Sensor comprises mass, two double-ended tuning forks and brace summer, and double-ended tuning fork is connected by the supporting tuning fork at power structure for amplifying two ends.Tuning fork is driven by the comb capacitance of transverse movement and vibrates in resonant frequency, and as the part of resonance circuit backfeed loop, to maintain vibration.When acceleration acts on mass, produce the active force of double-ended tuning fork axial direction, change the potential energy of system, thus change the vibration frequency of tuning fork.The differential output of two double-ended tuning forks can eliminate the impact (as temperature and intersecting axle interference) of first order component on frequency of common-mode error.The resonant frequency of the clamped tuning fork resonator of both-end is 68KHz, and sensitivity is 45Hz/g.This research group in 2002 reports again the device after the improvement of a kind of structure, and the background noise of the device after Vacuum Package when 300Hz is
2005, the people such as V.Ferrari reported a kind of electric heating excitation/piezoresistive detection resonance type accelerometer utilizing bulk silicon technological to make.The acceleration of chip plane brings out minor resistant genes axial stress, changes the resonant frequency of micro-beam in proportion.Micro-beam resonant frequency is 700KHz.In 0 ~ 3KHz frequency range, measurement sensistivity is 35Hz/g.Introduce the Cross-talk effect that circuit compensation link compensates input and output in test macro, effectively reduce the crosstalk effect of input and output.
One of difficult point that resonant mode acceleration transducer makes is how to make between framework and mass not in conplane brace summer and resonance beam, require that resonance beam is positioned at substrate top surface, and the neutral surface of brace summer will with the center of gravity of mass at same plane.Otherwise larger intersecting axle interference and measure error can be introduced.The first half of resonance beam and mass is made on a wafer for addressing this problem the people such as ChristianBurrer, and on another substrate, make the latter half of brace summer and mass, then the two be bonded together, bonding face difficulty is comparatively large, is easy to cracking.D.W.Burns utilizes the method for heavy doping etch stop to make brace summer at chip tow sides, realizes brace summer neutral surface and mass center of gravity at same plane.The Structure and energy flow process of the resonance type accelerometer utilizing the method to realize is more complicated, and brace summer thickness is less.
Summary of the invention
The object of the invention is to invent a kind of resonance beam (1) of resonance type accelerometer and the manufacture method of brace summer (2), same silicon chip (3) is produced not at conplane resonance beam (1) and brace summer (2).Resonance beam (1) and brace summer (2) are positioned at " mouth " font etching tank (6) between mass (4) and framework (5), the clamped side in mass (4), one end, the other end is clamped at framework (5) inwall.Resonance beam (1) is positioned at silicon chip (3) upper surface, and the neutral surface of brace summer (2) and the center of gravity of mass (4) are in same level.
The technical solution adopted in the present invention is for achieving the above object: the resonance beam (1) of resonance type accelerometer and brace summer (2) realize one-shot forming by two step anisotropic wet etching process.First, employing has mask wet corrosion technique to erode to certain depth from resonance beam (1) back side.Then front photoetching, the corrosion masking layer (7) in wet etching or dry etching silicon slice (3) front etch groove (6) except resonance beam (1) part and mass (4) convex corner compensation part; Again, reverse side photoetching, the corrosion masking layer (7) in wet etching or dry etching silicon slice (3) back side etching tank (6) except mass (4) convex corner compensation part.Last mask-without mask corrosion combines and realizes the one-shot forming of resonance beam (1) and brace summer (2), and the thickness of resonance beam (1) and brace summer (2) reaches setting value simultaneously.
Two step corrosion manufacture methods of (1) of resonance type accelerometer involved in the present invention and brace summer (2), is characterized in that being realized by following processing step:
[1] original silicon chip (3) is twin polishing silicon chip, and thickness is H.
[2] thermal oxide or chemical gas-phase deposition method make corrosion masking layer (7) at silicon chip (3) front and back.
[3] back side photoetching, forms back of the body corrosion window, and the window's position is just to four corners of resonance beam (1) and etching tank (6).Length (along resonance beam (1) length direction) and the width (along resonance beam (1) width) of resonance beam back of the body corrosion window (8) are respectively L and b+2 (H-h) ctg54.7 °, wherein L is etching tank (6) width, the mask width of resonance beam (1) when b is [5] step process front photoetching, h is the design thickness of resonance beam (1).Etching tank corner back of the body corrosion window (9) is square, and the length of side equals the length of resonance beam back of the body corrosion window (8).
[4] corrode silicon in anisotropic etchant, the vertical etches degree of depth is (H+d)/2-h.Wherein, d is the design thickness of brace summer (2).
[5] front photoetching, corrosion masking layer (7) in wet etching or dry etching silicon slice (3) front etch groove (6), but the corrosion masking layer (7) that should retain resonance beam (1) part and mass (4) convex corner compensation part.
[6] back side photoetching, the mask in wet etching or dry etching silicon slice (3) back side etching tank (6), but the corrosion masking layer (7) of mass (4) convex corner compensation part should be retained.
[7] silicon is corroded in anisotropic etchant, during corrosion depth equals (H-d)/2, shaping while realizing resonance beam (1) and brace summer (2).
Wherein, the anisotropic etch of processing step [7] step is the resonance beam (1) and brace summer (2) the one-time formed key that realize resonance type accelerometer, and in corrosion process, the situation of change of silicon chip (3) zones of different is as follows:
[1] silicon materials of etching tank corner back of the body corrosion window (9) are constantly corroded, and when corrosion depth equals (H-d)/2+h, four corners of etching tank (6) are run through.
[2] when corrosion depth equals (H-d)/2, resonance beam (1) thickness is h, and brace summer (2) thickness is d, reaches setting value.
[3] positive and negative between etching tank corner back of the body corrosion window (9) and resonance beam back of the body corrosion window (8) is all corroded, the silicon materials in front are had mask corrosion, the silicon materials quilt at the back side is without mask corrosion, and its (111) side is replaced by (311) face gradually.If the spacing of resonance beam back of the body corrosion window (8) and etching tank corner back of the body corrosion window (9) is greater than 1.89 (H-d), then the cross section of the last brace summer (2) formed is isosceles trapezoid.If the spacing of resonance beam back of the body corrosion window (8) and etching tank corner back of the body corrosion window (9) is less than 1.89 (H-d), then the cross section of the last brace summer (2) formed is isosceles triangle.The cross section of made brace summer (2) is isosceles triangle or isosceles trapezoid, and the angle of side and bottom surface is 25.24 °.
The effective length of the brace summer (2) utilizing said method to corrode is (that is thickness is d part) is L-(H-d) ctg54.7 °.The length effective length (that is thickness is h part) of resonance beam (1) is L-2 (H-h) ctg54.7 °.The cross section of resonance beam (1) is isosceles trapezoid, and its width of going to the bottom is b+0.59 (d-H)+2.6h, and the width of upper base is b+0.59 (d-H)+6.84h.
When corroding to make second time, the mask pattern of four corners is squares, and make the left side of brace summer (2) also in mass (4) scope, the mass length of side should equal b+2 (H-h) ctg54.7 °+2Z, and be greater than b+2 (H-h) ctg54.7 °+Z+4.24d, wherein Z is the spacing of resonance beam (1) back of the body corrosion window (8) and etching tank corner back of the body corrosion window (9).
The resonance beam (1) of resonance type accelerometer involved in the present invention and two step corrosion manufacture methods of brace summer (2) are produced not in conplane brace summer (2) and resonance beam (1) on same silicon chip (3), resonance beam (1) is positioned at substrate top surface, and the center of gravity of the neutral surface of brace summer (2) and mass (4) is at same plane, make the resonance type accelerometer structure of making simple, reduce intersecting axle interference and measure error.
Accompanying drawing explanation
Fig. 1 is the resonance beam (1) of resonance type accelerometer involved in the present invention and the structural representation of brace summer (2).
Fig. 2 is the mask graph of the first time photoetching of the resonance beam (1) of resonance type accelerometer involved in the present invention and the manufacturing technology steps of brace summer (2), and wherein grey graph area is the region that masking layer is corroded.
Fig. 3 is the resonance beam (1) of the resonance type accelerometer shown in Fig. 2 and the manufacturing technology steps of brace summer (2) process chart along AA visual angle.In figure:
1-resonance beam 2-brace summer 3-silicon chip
4-mass 5-framework 6-etching tank
7-corrodes masking layer 8-resonance beam back of the body corrosion window 9-etching tank corner back of the body corrosion window
Detailed description of the invention
Below in conjunction with accompanying drawing 3 and embodiment 1, the present invention will be further described, but be not limited to this embodiment.
Embodiment 1: resonance beam (1) thickness is 10 microns, brace summer (2) thickness is 50 microns, and original silicon chip (3) thickness is 380 microns, etching tank (6) width 661 microns.The fabrication processing determined according to these data is as follows:
1) thermal oxide, makes the silica membrane of thickness 1.5 microns at silicon chip (3) tow sides.(see accompanying drawing 3 [1])
2) back side photoetching, forms back of the body corrosion window, and the window's position is just to four corners of resonance beam (1) and etching tank (6).The length (along resonance beam (1) length direction) of resonance beam back of the body corrosion window (8) and width (along resonance beam (1) width) the comparatively length of resonance beam (1) and width are respectively 661 microns and 724 microns.Etching tank corner back of the body corrosion window (9) is square, and the length of side is 661 microns.(see accompanying drawing 3 [2])
3) silicon is corroded in 40% potassium hydroxide solution, the vertical etches degree of depth 205 microns.(see accompanying drawing 3 [3])
4) front photoetching, removes the silicon dioxide masking layer at resonance beam (1) and convex corner compensation place in slowly-releasing hydrofluoric acid solution corrosion front etch groove (6).The masking layer width of resonance beam (1) is 200 microns.(see accompanying drawing 3 [4])
5) back side photoetching, the silicon dioxide masking layer in slowly-releasing hydrofluoric acid solution corrosion of silicon (3) back side etching tank (6).(see accompanying drawing 3 [5])
6) silicon is corroded in 40% potassium hydroxide solution, when the vertical etches degree of depth equals 165 microns, shaping while realizing resonance beam (1) and brace summer (2).(see accompanying drawing 3 [6])
The width of the upper base of the resonance beam (1) utilizing above-mentioned processing step to corrode is 73.7 microns, and the width of going to the bottom is 31.3 microns, and the effective length (that is thickness is 10 micron fraction) of resonance beam (1) is 137 microns.The effective length of brace summer (2) is (that is thickness is 50 micron fraction) is 427 microns.
Claims (3)
1. two step corrosion manufacture methods of a resonance type accelerometer resonance beam and brace summer, it is characterized in that: the resonance beam (1) of resonance type accelerometer and brace summer (2) realize one-shot forming by the corrosion of anisotropic wet etching process two step, first, employing has mask corrosion technique to erode to certain depth from resonance beam (1) back side; Then front photoetching, the corrosion masking layer (7) in wet etching or dry etching silicon slice (3) front etch groove (6) except resonance beam (1) part and mass (4) convex corner compensation part; Again, reverse side photoetching, the corrosion masking layer (7) in wet etching or dry etching silicon slice (3) back side etching tank (6) except mass (4) convex corner compensation part; Finally, there is mask corrosion and combine without mask corrosion and realize the one-shot forming of resonance beam (1) and brace summer (2), resonance beam (1) is positioned at substrate top surface, and the neutral surface of brace summer (2) and the center of gravity of mass (4) are at same plane.
2. two step corrosion manufacture methods of resonance type accelerometer resonance beam according to claim 1 and brace summer, be is characterized in that: it is characterized in that being realized by following processing step:
[1] original silicon chip (3) is twin polishing silicon chip, and thickness is H;
[2] thermal oxide or chemical gas-phase deposition method make corrosion masking layer (7) at silicon chip (3) front and back;
[3] back side photoetching, forms back of the body corrosion window, and the window's position is just to four corners of resonance beam (1) and etching tank (6); Length and the width of resonance beam back of the body corrosion window (8) are respectively L and b+2 (H-h) ctg54.7 °, wherein L is etching tank (6) width, the mask width of resonance beam (1) when b is [5] step process front photoetching, h is the design thickness of resonance beam (1), etching tank corner back of the body corrosion window (9) is square, and the length of side equals the length of resonance beam back of the body corrosion window (8);
[4] corrode silicon in anisotropic etchant, the vertical etches degree of depth is (H+d)/2-h, and wherein d is the design thickness of brace summer (2);
[5] front photoetching, corrosion masking layer (7) in wet etching or dry etching silicon slice (3) front etch groove (6), but the corrosion masking layer (7) that should retain resonance beam (1) part and mass (4) convex corner compensation part;
[6] back side photoetching, the mask in wet etching or dry etching silicon slice (3) back side etching tank (6), but the corrosion masking layer (7) of mass (4) convex corner compensation part should be retained;
[7] silicon is corroded in anisotropic etchant, during corrosion depth equals (H-d)/2, shaping while realizing resonance beam (1) and brace summer (2).
3. two step corrosion manufacture methods of resonance type accelerometer resonance beam according to claim 1 and brace summer, it is characterized in that: made resonance beam (1) and the cross section of brace summer (2) are isosceles trapezoid or isosceles triangle, and the angle of side and bottom surface is 25.24 °.
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| CN201210059372.2A CN102602879B (en) | 2011-11-23 | 2012-03-01 | Two step corrosion manufacture methods of resonance type accelerometer resonance beam and brace summer |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104843633A (en) * | 2014-02-14 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | Silicon anisotropic etching method |
| CN107643424B (en) * | 2017-09-21 | 2020-03-17 | 中国电子科技集团公司第四十九研究所 | Piezoresistive MEMS acceleration chip and manufacturing method thereof |
| JP7146499B2 (en) | 2018-07-17 | 2022-10-04 | 東京計器株式会社 | Method for manufacturing three-dimensional structural member, method for manufacturing acceleration pickup member, acceleration pickup member, and acceleration sensor |
| CN110775936B (en) * | 2019-11-18 | 2023-04-11 | 中国电子科技集团公司第二十六研究所 | Miniature three-dimensional stacked MEMS (micro-electromechanical systems) resonance device |
| CN110988398A (en) * | 2019-12-16 | 2020-04-10 | 中国计量大学 | Double-shaft micromechanical resonant accelerometer based on non-coplanar H-shaped resonator and crab leg type supporting beam |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251698B1 (en) * | 1997-05-23 | 2001-06-26 | Sextant Avionique | Method for making a machined silicon micro-sensor |
| CN1959417A (en) * | 2006-11-17 | 2007-05-09 | 中国科学院上海微系统与信息技术研究所 | Micro mechanical capacitance type acceleration transducer, and fabricating method |
| CN101038298A (en) * | 2007-03-16 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof |
| CN101066749A (en) * | 2007-06-12 | 2007-11-07 | 中国科学院上海微系统与信息技术研究所 | Cantilever structure and its making process and application |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2001270026A1 (en) * | 2000-06-21 | 2002-01-02 | Input/Output, Inc. | Accelerometer with folded beams |
| JP3919616B2 (en) * | 2002-07-05 | 2007-05-30 | キヤノン株式会社 | Micro structure and manufacturing method thereof |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251698B1 (en) * | 1997-05-23 | 2001-06-26 | Sextant Avionique | Method for making a machined silicon micro-sensor |
| CN1959417A (en) * | 2006-11-17 | 2007-05-09 | 中国科学院上海微系统与信息技术研究所 | Micro mechanical capacitance type acceleration transducer, and fabricating method |
| CN101038298A (en) * | 2007-03-16 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof |
| CN101066749A (en) * | 2007-06-12 | 2007-11-07 | 中国科学院上海微系统与信息技术研究所 | Cantilever structure and its making process and application |
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