CN102594343B - Numerically controlled oscillator with high tuning precision - Google Patents
Numerically controlled oscillator with high tuning precision Download PDFInfo
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- CN102594343B CN102594343B CN201210051625.1A CN201210051625A CN102594343B CN 102594343 B CN102594343 B CN 102594343B CN 201210051625 A CN201210051625 A CN 201210051625A CN 102594343 B CN102594343 B CN 102594343B
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Abstract
The invention discloses an inductance-capacitance type numerically controlled oscillator with high tuning precision. A resonant circuit comprises an inductor L, a capacitor C, a first control unit circuit, ..., and a nth control unit circuit, wherein the first control unit circuit is controlled by a first control bit D1 and consists of P type field effect transistors PM11, PM12, PM13 and PM14, the nth control unit circuit is controlled by a nth control bit Dn and consists of P type field effect transistors PMn1, PMn2, PMn3 and PMn4, and the inductor L, the capacitor C, the first control unit circuit, ..., and the nth control unit circuit are connected in parallel to form a control unit array; a first input end of the capacitor L is connected with a first input end of the capacitor C to be taken as a first input end (1) of the resonant circuit, and a second input end of the inductor L is connected with a second input end of the capacitor C to be taken as a second input end (2) of the resonant circuit; and each control unit is formed by the reverse parallel connection of PMOS (Positive Channel Metal Oxide Semiconductor) tube pairs with different sizes, the small capacitance difference can be obtained by the size difference of the PMOS tubes, and the fine frequency tuning step can be obtained, namely, the high frequency tuning precision is realized.
Description
Technical field
The present invention relates to a kind of digital controlled oscillator, introduce novel switched PMOS capacitor cell, obtain little unit switching capacity, is high frequency tuning precision thereby realize meticulous frequency tuning step-length.
Background technology
Digital controlled oscillator can be regarded a kind of numeral as to the device of frequency inverted, it is controlled by supplied with digital signal, can produce the frequency oscillator signal corresponding with Input Control Word, it is one of most important module in digital phase-locked loop, by the loop feedback of phase-locked loop, control and produce the stable output signal of frequency plot, for electronic system provides reference clock or local oscillation signal.The frequency tuning precision of digital controlled oscillator is one of crucial index, often determined its application scenario, simultaneously higher frequency tuning precision is also favourable for reducing its phase noise, and the digital controlled oscillator that therefore designs high frequency tuning precision is necessary.
Digital controlled oscillator mainly comprises annular digital controlled oscillator and inductance capacitance type digital controlled oscillator two classes, annular digital controlled oscillator consists of the cascade of odd level rp unit, drive current or driving load capacitance by digital control every one-level can realize frequency tuning easily, inductance capacitance type digital controlled oscillator is comprised of inductance capacitance resonant tank and active circuit, wherein resonant tank is determined frequency of oscillation, active circuit is equivalent to " negative resistance ", compensates the energy loss producing on resistance in each cycle of oscillation.Because inductance capacitance type digital controlled oscillator has preferably phase noise performance and low jitter characteristic, in current CMOS technique, obtained application widely.
The structure of inductance-capacitance numerical control oscillator is more fixing, the structure of numerically controlled capacitor array in the active circuit that the main distinction is generation " negative resistance " and resonant network." negative resistance ", for the loss in compensating inductance capacitor resonance loop, maintains vibration, because cross-couplings pipe is to adopting differential configuration, has good common mode inhibition effect, is that the most frequently used " negative resistance " produces circuit at present; Consider to reduce power consumption, and raising Power Supply Rejection Ratio, complementary PMOS, NMOS cross-couplings pipe to the NMOS cross-couplings pipe with respect to independent to or PMOS cross-couplings pipe to thering is obvious advantage, in inductance capacitance type digital controlled oscillator, obtained being widely used.The attached complementary PMOS of tradition employing, the inductance capacitance type digital controlled oscillator of NMOS cross-couplings pipe to conduct " negative resistance " generation circuit of Figure 1 shows that, is called complementary chiasma coupling inductance capacitor type digital controlled oscillator.
In this digital controlled oscillator, switched capacitor array adopts PMOS pipe to realize, and control bit Dn level switches between VDD-to-VSS.When Dn is power level, PMOS pipe works in strong inversion, shows as strong inversion electric capacity; And when Dn is ground level, PMOS pipe works in depletion region, show as depletion region capacitance.Therefore unit switching capacity size is the difference of strong inversion electric capacity and depletion region capacitance, is limited to the characteristic size of technique, and this capacitance is conventionally larger, thereby causes the tuning precision of digital controlled oscillator limited, and tuning step-length is larger.This has limited the application of inductance capacitance type digital controlled oscillator to a certain extent.
Summary of the invention
technical problem:technical problem to be solved by this invention is the defect for background technology, and a kind of truly feasible raising inductance capacitance type digital controlled oscillator frequency tuning precision is provided, and reduces design and the structure of its frequency tuning step-length.
technical scheme:for solving the problems of the technologies described above, the inductance capacitance type digital controlled oscillator of high tuning precision of the present invention comprises the first n type field effect transistor, the second n type field effect transistor, the first p type field effect transistor, the second p type field effect transistor and resonant tank, the source ground of described the first n type field effect transistor, the drain electrode of the first n type field effect transistor connects the drain electrode of the first p type field effect transistor, and the grid of the first n type field effect transistor connects the second input of resonant tank; The source ground of described the first n type field effect transistor, the drain electrode of the second n type field effect transistor connects the drain electrode of the second p type field effect transistor, and the grid of the second n type field effect transistor connects the first input end of resonant tank; The source electrode of described the first p type field effect transistor meets power vd D, and the drain electrode of the first p type field effect transistor connects the drain electrode of the first n type field effect transistor, and the grid of the first p type field effect transistor connects the second input of resonant tank; The source electrode of described the second p type field effect transistor meets power vd D, and the drain electrode of the second p type field effect transistor connects the drain electrode of the second n type field effect transistor, and the grid of the second p type field effect transistor connects the first input end of resonant tank;
Described resonant tank comprise first the control unit circuit being formed by p type field effect transistor PM11, PM12, PM13 and PM14 that the inductance L that is connected in parallel, capacitor C, the first control bit D1 control ..., and the n position control unit circuit being formed by p type field effect transistor PMn1, PMn2, PMn3 and PMn4 controlled by n control bit Dn, composition control cell array;
Described inductance L first input end connects the first input end of capacitor C, and as the first input end (1) of resonant tank, the second input of inductance L the second input termination capacitor C, as second input (2) of resonant tank;
Together with the grid of the grid of the source electrode of the source electrode of described p type field effect transistor PM11, drain electrode and substrate, p type field effect transistor PM12, drain electrode and substrate, p type field effect transistor PM13, p type field effect transistor PM14 is all received, as the first control bit D1 end; The source electrode of the grid of p type field effect transistor PM11, p type field effect transistor PM13, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PM12, p type field effect transistor PM14 are received the second input of inductance L;
Together with the grid of the grid of the source electrode of the source electrode of described p type field effect transistor PMn1, drain electrode and substrate, p type field effect transistor PMn2, drain electrode and substrate, p type field effect transistor PMn3, p type field effect transistor PMn4 is all received, as n control bit Dn, hold, the source electrode of the grid of p type field effect transistor PMn1, p type field effect transistor PMn3, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PMn2, p type field effect transistor PMn4 are received the second input of inductance L;
In described control unit array, the connection of each control unit is all identical, and PMk3, PMk4 are greater than PMk1, PMk2 to pipe to the size of pipe, and wherein k is 1 to n.
beneficial effect:the present invention, by improving switched capacitor array in traditional inductance capacitance type digital controlled oscillator, realizes less switching capacity, has obtained higher frequency tuning precision, has effectively reduced the step-length of frequency tuning.The present invention has simple in structure, is easy to the feature realizing.
Accompanying drawing explanation
Fig. 1 is traditional inductance capacitance type digital controlled oscillator circuit diagram;
Fig. 2 is inductance capacitance type digital controlled oscillator circuit diagram of the present invention;
Fig. 3 is the operating state curve of digital controlled oscillator work time unit switching capacity.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment is only not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
As shown in Figure 2, the inductance capacitance type digital controlled oscillator of high tuning precision, comprise the first n type field effect transistor NM1, the second n type field effect transistor NM2, the first p type field effect transistor PM1, the second p type field effect transistor PM2 and resonant tank, described resonant tank comprises the inductance L being connected in parallel, capacitor C, the first control bit D1 control by p type field effect transistor PM11, PM12, first control unit circuit that PM13 and PM14 form, with by n control bit Dn, controlled by p type field effect transistor PMn1, PMn2, the n position control unit circuit that PMn3 and PMn4 form, composition control cell array,
Described inductance L first input end connects the first input end of capacitor C, and as the first input end 1 of resonant tank, the second input of inductance L the second input termination capacitor C, as the second input 2 of resonant tank;
Together with the grid of the grid of the source electrode of the source electrode of described p type field effect transistor PM11, drain electrode and substrate, p type field effect transistor PM12, drain electrode and substrate, p type field effect transistor PM13, p type field effect transistor PM14 is all received, as the first control bit D1 end; The source electrode of the grid of p type field effect transistor PM11, p type field effect transistor PM13, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PM12, p type field effect transistor PM14 are received the second input of inductance L;
Together with the grid of the grid of the source electrode of the source electrode of described p type field effect transistor PMn1, drain electrode and substrate, p type field effect transistor PMn2, drain electrode and substrate, p type field effect transistor PMn3, p type field effect transistor PMn4 is all received, as n control bit Dn, hold, the source electrode of the grid of p type field effect transistor PMn1, p type field effect transistor PMn3, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PMn2, p type field effect transistor PMn4 are received the second input of inductance L;
In described control unit array, the connection of each control unit is all identical, and PMk3, PMk4 are greater than PMk1, PMk2 to pipe to the size of pipe, and wherein k is 1 to n.
Be illustrated in figure 3 the operating state of the work of digital controlled oscillator in Fig. 1 and Fig. 2 time unit switching capacity, all take scheme in the unit of control bit D1 control be example explanation.Wherein A, B sign is region on chain-dotted line, and C, D, E, F sign is two regions on solid line.When in Fig. 1, D1 is high level, PM11 and PM12 all work in B district, and D1 is while being low level, and PM11 and PM12 all work in A district, and therefore, the switching capacity Δ C of unit is C
b-C
a.When in Fig. 2, D1 is high level, PM11 and PM12 all work in F district, and PM11 and PM12 all work in C district, and D1 is while being low level, and PM11 and PM12 all work in E district, and PM11 and PM12 all work in D district, so the switching capacity Δ C of unit is (C
f+ C
c)-(C
e+ C
d)=(C
f-C
e)-(C
d-C
c).When PMOS manages right size difference, hour ，Gai unit's switching capacity is much smaller by the unit switching capacity than in traditional structure, thereby can obtain less frequency tuning step-length, realizes high tuning precision.
Claims (1)
1. the numerically-controlled oscillator of a high tuning precision, comprise the first n type field effect transistor (NM1), the second n type field effect transistor (NM2), the first p type field effect transistor (PM1), the second p type field effect transistor (PM2) and resonant tank, the source ground of described the first n type field effect transistor (NM1), the drain electrode of the first n type field effect transistor (NM1) connects the drain electrode of the first p type field effect transistor (PM1), and the grid of the first n type field effect transistor (NM1) connects the second input of resonant tank; The source ground of described the first n type field effect transistor (NM1), the drain electrode of the second n type field effect transistor (NM2) connects the drain electrode of the second p type field effect transistor (PM2), and the grid of the second n type field effect transistor (NM2) connects the first input end (1) of resonant tank; The source electrode of described the first p type field effect transistor (PM1) meets power vd D, the drain electrode of the first p type field effect transistor (PM1) connects the drain electrode of the first n type field effect transistor (NM1), and the grid of the first p type field effect transistor (PM1) connects second input (2) of resonant tank; The source electrode of described the second p type field effect transistor (PM2) meets power vd D, the drain electrode of the second p type field effect transistor (PM2) connects the drain electrode of the second n type field effect transistor (NM2), and the grid of the second p type field effect transistor (PM2) connects the first input end (1) of resonant tank;
It is characterized in that: described resonant tank comprise first the control unit circuit being formed by p type field effect transistor PM11, PM12, PM13 and PM14 that the inductance L that is connected in parallel, capacitor C, the first control bit D1 control ..., and the n position control unit circuit being formed by p type field effect transistor PMn1, PMn2, PMn3 and PMn4 controlled by n control bit Dn, composition control cell array;
Described inductance L first input end connects the first input end of capacitor C, and as the first input end (1) of resonant tank, the second input of inductance L the second input termination capacitor C, as second input (2) of resonant tank;
Together with the grid of the grid of the source electrode of the source electrode of described p type field effect transistor PM11, drain electrode and substrate, p type field effect transistor PM12, drain electrode and substrate, p type field effect transistor PM13, p type field effect transistor PM14 is all received, as the first control bit D1 end; The source electrode of the grid of p type field effect transistor PM11, p type field effect transistor PM13, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PM12, p type field effect transistor PM14 are received the second input of inductance L;
Together with the grid of the grid of the source electrode of the source electrode of described p type field effect transistor PMn1, drain electrode and substrate, p type field effect transistor PMn2, drain electrode and substrate, p type field effect transistor PMn3, p type field effect transistor PMn4 is all received, as n control bit Dn, hold, the source electrode of the grid of p type field effect transistor PMn1, p type field effect transistor PMn3, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PMn2, p type field effect transistor PMn4 are received the second input of inductance L;
In described control unit array, the connection of each control unit is all identical, and PMk3, PMk4 are greater than PMk1, PMk2 to pipe to the size of pipe, and wherein k is 1 to n.
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| CN107947756A (en) * | 2017-11-28 | 2018-04-20 | 中科亿海微电子科技（苏州）有限公司 | Difference CMOS process circuits and oscillatory system |
| CN108449075B (en) * | 2018-03-16 | 2020-08-04 | 西安电子科技大学 | CMOS phase interpolation numerical control oscillator |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225871B1 (en) * | 2000-02-07 | 2001-05-01 | Prominenet Communications, Inc. | Voltage controlled CMOS oscillator |
| US6558748B2 (en) * | 2001-09-11 | 2003-05-06 | J. M. Huber Corporation | Method for forming edge sealant for wood |
| CN1832333A (en) * | 2006-04-14 | 2006-09-13 | 清华大学 | CMOS digital control LC oscillator on chip |
| CN1960164A (en) * | 2006-10-27 | 2007-05-09 | 清华大学 | CMOS of chip digital controlled complementary type LC oscillator in low noise |
| CN202444478U (en) * | 2012-03-01 | 2012-09-19 | 东南大学 | Numerically controlled oscillator with high tuning precision |
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2012
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225871B1 (en) * | 2000-02-07 | 2001-05-01 | Prominenet Communications, Inc. | Voltage controlled CMOS oscillator |
| US6558748B2 (en) * | 2001-09-11 | 2003-05-06 | J. M. Huber Corporation | Method for forming edge sealant for wood |
| CN1832333A (en) * | 2006-04-14 | 2006-09-13 | 清华大学 | CMOS digital control LC oscillator on chip |
| CN1960164A (en) * | 2006-10-27 | 2007-05-09 | 清华大学 | CMOS of chip digital controlled complementary type LC oscillator in low noise |
| CN202444478U (en) * | 2012-03-01 | 2012-09-19 | 东南大学 | Numerically controlled oscillator with high tuning precision |
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Effective date of registration: 20170215 Address after: 99 No. 214135 Jiangsu province Wuxi city Wuxi District Linghu Avenue Patentee after: Southeast University Wuxi branch Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 99 Patentee before: Southeast University |
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