CN102576667A - Hollow cathode showerhead - Google Patents
Hollow cathode showerhead Download PDFInfo
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- CN102576667A CN102576667A CN2010800424916A CN201080042491A CN102576667A CN 102576667 A CN102576667 A CN 102576667A CN 2010800424916 A CN2010800424916 A CN 2010800424916A CN 201080042491 A CN201080042491 A CN 201080042491A CN 102576667 A CN102576667 A CN 102576667A
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- 238000000034 method Methods 0.000 claims abstract description 49
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- 230000005684 electric field Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 35
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 33
- 239000012212 insulator Substances 0.000 claims description 15
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 15
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 35
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 28
- 239000002243 precursor Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 21
- 150000004767 nitrides Chemical class 0.000 description 21
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 13
- 239000000460 chlorine Substances 0.000 description 13
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- 238000001816 cooling Methods 0.000 description 11
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- 238000005229 chemical vapour deposition Methods 0.000 description 9
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910017083 AlN Inorganic materials 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
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- 238000005660 chlorination reaction Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
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- 238000005086 pumping Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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- 229910001199 N alloy Inorganic materials 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
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- -1 oxygen radical Chemical class 0.000 description 2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
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- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32596—Hollow cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Abstract
Embodiments of the present invention provide method and apparatus for performing metal HVPE or MOCVD process using radicals from a plasma. One embodiment of the present invention provides a processing chamber having a gas distribution assembly configured to generate a plasma and provide one or more radical species to a processing volume while shielding electrical field of the plasma from the processing volume. In one embodiment the gas distribution assembly has a plurality of passages defined by a bore connected to a cone, wherein the aspect ratio of the bore is adjusted to allow passage of radicals in the plasma and retain the electrical field of the plasma.
Description
Technical field
Embodiments of the invention relate to the apparatus and method that are used for treatment substrate.Especially, embodiments of the invention provide the apparatus and method that are used to be used to carry out from the free radical of plasma the hot activation chemical vapor deposition processes.Embodiments of the invention also provide the apparatus and method that are used for the downstream cleaning process.
Background technology
Metal nitride semiconductor of III family be found in such as short-wave long light-emitting diode (LED), mechanism's diode (LD) and comprise high power, high-frequency, high temperature crystal pipe and integrated circuit multiple semiconductor device such as electronic device development and make in more and more important.Light-emitting diode (LED) and laser diode (LD) are made through deposition III group-III nitride on substrate.The III group-III nitride can pass through hydride gas-phase epitaxy (HVPE), the organic vapour deposition of metal (MOCVD), chemical vapor deposition (CVD) and/or physical vapor deposition (PVD), is deposited on such as on the salic substrates such as Sapphire Substrate.
Traditionally, when forming III family metal nitride film, from ammonia (NH through heating through HVPE or MOCVD
3) nitrogenous source is provided.Ammonia decomposes and to produce the needed temperature of nitrogen very high, and the physics and the chemical property of conditioned response dynamics and source gas to a certain extent.In addition, a small amount of hydrogen of not expecting in the ammonia also possibly be formed in the metal nitride film.With compare such as other nitrogenous sources such as nitrogen, ammonia is also quite expensive.
Embodiments of the invention provide when forming III family metal nitride through HVPE or MOCVD process and have used the solution of nitrogen as nitrogenous source, thus owner's cost when being reduced in other equipment such as making LED, LD.
Summary of the invention
The present invention usually provides the apparatus and method that are used to form the LED/LD structure.Especially, embodiments of the invention relate to and are used to use the free radical from plasma to carry out the hot activation chemical vapour deposition (CVD), for example use the nitrogen free radical from plasma to be formed for the apparatus and method such as the III family metal nitride layer of light-emitting diode (LED) or laser diode devices such as (LD).Embodiments of the invention can also be applied to the downstream cleaning process.
One embodiment of the present of invention provide the chamber that is used to handle one or more substrates, and it comprises: the chamber main body, and it limits handles volume; Pedestal, it is arranged in the processing volume and is configured to support one or more substrates; The distribution assembly, it is arranged in pedestal top, wherein the distribution assembly is configured to generate plasma, and in the electric field isolation that will handle volume and plasma, will supply to the processing volume from one or more free radical kinds of plasma; RF (radio frequency) power supply, it is coupled to the distribution assembly; The first reactant source of the gas, it is coupled to the distribution assembly; And the second reactant source of the gas, its with handle volume fluid ground and be communicated with.
An alternative embodiment of the invention provides a kind of distribution assembly that is used for the free radical of reactant gas is supplied to processing region; Said distribution assembly comprises: first electrode; It has a plurality of first paths of second side of first side that connects first electrode and first electrode; Wherein first side of first electrode is configured to towards processing region, and each first path have on first side than narrow opening and the broad opening on second side; Second electrode, it is basically parallel to first electrode, and wherein second side of first electrode is to second electrode, and plasma generates volume defining between first electrode and second electrode; And insulator, its near around first electrode and second electrode, be arranged between first electrode and second electrode, and the electric insulation between first electrode and second electrode is provided.
Another embodiment of the present invention provides a kind of method that is used to handle one or more substrates; Said method comprising the steps of: one or more substrates are positioned on the pedestal in the processing volume that is arranged in process chamber; Wherein process chamber comprises the distribution assembly that is arranged in the pedestal top, and the distribution assembly has plasma generation volume; The plasma that makes first reacting gas flow into the distribution assembly generates volume; , plasma lights plasma in generating volume to generate the free radical of first reacting gas; The free radical of first reacting gas is incorporated in the processing volume; Make second reacting gas flow into said processing volume; And on said one or more substrates, form film, wherein film is the product of first reacting gas and second reacting gas.
Description of drawings
Through the reference implementation example, above-mentioned characteristic of the present invention can be at length understood, and the present invention of top brief overview can be described in more detail, wherein illustrate some embodiment in the accompanying drawings.Yet therefore, should notice that accompanying drawing only illustrates exemplary embodiments of the present invention and is not regarded as limiting scope of the present invention, because the present invention can allow the embodiment of other equal authenticities.
Fig. 1 is the explanatory view of process chamber according to an embodiment of the invention.
Fig. 2 is the schematic section side view of MOCVD according to an embodiment of the invention chamber.
Fig. 3 A is the partial side view in cross section of the negative electrode of distribution assembly according to an embodiment of the invention.
Fig. 3 B is the vertical view of the negative electrode of Fig. 3 A.
Fig. 3 C shows the bottom view of negative electrode of Fig. 3 A of cooling duct.
Fig. 3 D shows another vertical view of negative electrode of Fig. 3 A of the passage that is used for second source of the gas.
Fig. 4 is the sectional view of HVPE according to an embodiment of the invention chamber.
Fig. 5 is the partial section of the negative electrode of the distribution assembly in the HVPE chamber of Fig. 4.
Embodiment
Embodiments of the invention relate to use and carry out the hot activation chemical vapor deposition method from the free radical of plasma.Embodiments of the invention relate to the manufacturing such as light-emitting diode (LED) or laser diode devices such as (LD).More particularly, embodiments of the invention relate to the nitrogen free radical that is used to use from plasma, form the apparatus and method of III family metal nitride film through HVPE or MOCVD.Embodiments of the invention also relate to use and form sull from the oxygen radical of oxygen plasma.The plasma that embodiments of the invention can also be used to generate pure compound for example generates the As free radical of AsH3 plasma to be provided for mixing with trimethyl gallium (TMG) to be provided for the free radical of chemical vapour deposition (CVD).
One embodiment of the present of invention being provided with has the process chamber of distribution assembly, and this distribution assembly is configured to generate plasma and when making the electric field isolation of handling volume and plasma, to handling volume one or more free radical kinds is provided.Through making the free radical chilling from plasma, embodiments of the invention can make traditional hot activation vapour deposition carry out with lower temperature.In one embodiment, the distribution assembly has a plurality of paths that limited the boring that is connected to cone, and wherein the aspect ratio of boring is adjusted to the electric field that passes through and keep plasma that allows the free radical in the plasma.
Fig. 1 is a process chamber 1 according to an embodiment of the invention.Process chamber 1 is configured to utilize the primary particle that generates from plasma to form metal nitride film through CVD method.
Process chamber 1 comprises chamber main body 10, pedestal 12 and is arranged in the distribution assembly 20 in the chamber main body 10.
First source of the gas 34 is connected to internal volume 28 to internal volume 28 one or more reacting gass to be provided.When second electrode 26 is applied RF power, can in internal volume 28, generate capacitive plasma.
Process chamber 1 also comprises vacuum pump 38, the stress level that it is configured to evacuation processes volume 18 and in handling volume 18, obtains expecting.During handling, vacuum pump 38 provides the negative pressure with respect to the internal volume 28 of distribution assembly 20 in handling volume 18, thereby allows the free radical kind in the internal volume 28 to flow to processing volume 18.
In one embodiment; Distribution assembly 20 is configured in the internal volume 28 and first path 30, generate plasma 42 so that the source decomposing gas; And when the RF field of handling volume 18 and plasma is isolated, the free radical in the plasma is supplied to processing volume 18.In one embodiment, the electric field of shielding plasma can be realized through in each path 30 that connects internal volume 28 and processing volume 18, one or more baffle plate characteristics being set.
In one embodiment, path 30 is through having towards the broad opening of internal volume 28 and than narrow opening baffle plate being set towards outside (being to handle volume 18 in this case).
In one embodiment, path 30 comprises the wider passages 30a that is connected to narrower boring 30b, and the aspect ratio of narrower boring 30b is adjusted into plasma is remained in the internal volume 28.In one embodiment, wider passages 30a can have conical by its shape.As shown in Figure 1, the sheath of plasma 42 (sheath) is present among internal volume 28 and the wider passages 30a.Narrower boring 30b is configured to provide baffle plate so that plasma is remained on wherein.The aspect ratio of diameter, length or length and diameter can be stressed, the free radical kind in the flow rate, plasma or the influence of other effects.In one embodiment, the aspect ratio of the length of narrower boring 30b and diameter can be between about 5: 1 to about 20: 1.
Although in example, produce capacitive plasma, can expect such as induction plasma or from the other forms of plasmas such as plasma of remote plasma source.
In one embodiment, can one or more increased response agent be incorporated into 28 to help plasma to generate.The exemplary reaction reinforcing agent can be H
2, Ar, He, Xe, Ne, CN, NH
3Perhaps its mixture.
In one embodiment, process chamber 1 is configured to, and forms one or more metal nitride films from the nitrogenous source that provided by first source of the gas 34 with from one or more metal precursors of second source of the gas 36 at substrate 14.In one embodiment, second source of the gas 36 is connected to the alternate path 32 that is formed in first electrode 22.Alternate path 32 has on the surf zone that is evenly distributed in first electrode 22 corresponding with pedestal 12.In another embodiment, second source of the gas 36 directly or through the distribution assembly is connected to processing volume 18.
During handling, flow into such as nitrogenous sources such as nitrogen in the internal volume 28 of distribution assembly 20, wherein nitrogenous source the plasma of nitrogen owing to be applied to first and second electrodes 22, RF power between 26 is decomposed when lighting.Nitrogen free radical (nitrogen-atoms) flow into through first path 30 then and handles volume 18 freely.Simultaneously, the metal precursor of chloride or metallo-organic compound form flow into from second source of the gas 36 and handles volume 18.Substrate 14 and/or processing volume 18 are heated to the temperature that allows nitrogen free radical and metal precursor reaction, and on substrate 14, form one or more nitride films.
In said process; Ammonia is replaced by the nitrogen free radical from nitrogen gas plasma; Thereby reduced metal nitride and formed needed temperature, this be because when the maximum processing temperature of use ammonia during as nitrogenous source be to be used to heat ammonia and cracked ammonium to obtain the temperature of nitrogen-atoms freely.In addition, because nitrogen is cheap more than ammonia, therefore also reduced owner's cost.
Embodiments of the invention are used to replace traditional heat shock work-source from the activation of source of plasma, and when forming compound film through epitaxial growth advantageous particularly.Especially, embodiments of the invention are favourable such as the properties of compound epitaxial films such as crystalline quality, growth rate, surface topography and carrier concentration in control.
More particularly, forming in the application of nitride film the III family metal nitride that embodiments of the invention can growing high-quality through MOCVD.There are the some growth difficult problems that make through the high-quality monocrystalline III of the very difficult manufacturing of traditional M OCVD family metal nitride film.
In the middle of the III family metal nitride, InN is owing to its high balance pressure nitrogen vapor is difficult to growth.The high equilibrium vapor pressure of InN is restricted to depositing temperature and is lower than 650 ℃ to prevent that divided thin film from separating.The source material that in the MOCVD growth, uses usually of InN is TMIn (trimethyl indium) and ammonia.In traditional M OCVD, growth temperature is usually with the Control Parameter that acts on film character such as control such as crystalline quality, growth rate, surface topography and carrier concentration.Because the high equilibrium vapor pressure of InN, there is narrower temperature window (400 ℃-600 ℃) in the successful growth for the InN that passes through traditional MOCVD.
Under these lower depositing temperatures, the degree that ammonia decomposes is very little, is being lower than 0.1% and under 900 ℃, be about 3% under 500 ℃.Owing to lack the nitrogen that reacts, can form indium from the teeth outwards and drip, the N source that therefore gets into and the ratio in In source must keep the formation of enough height (about 50,000) to avoid indium to drip.Embodiments of the invention can provide the active nitrogen of the plasma that comes to form in the comfortable distribution assembly, and can utilize the much little N source and the ratio in In source to form the good InN film of quality.
In addition, in traditional M OCVD, the degree of decomposition of ammonia increases H on the other hand significantly
2Dividing potential drop, wherein H
2Dividing potential drop has demonstrated the growth rate that reduces InN.Embodiments of the invention can replace ammonia as nitrogenous source with nitrogen, therefore can eliminate or reduce hydrogen and realize higher InN growth rate.
The another kind of film that often comprises in a layer of the layer of LED device, In
xGa
1-xN (x is usually between about 0.02 to about 0.03) is difficult to utilize heat activated nitrogenous source to use traditional M OCVD to form.Growth In for success
xGa
1-xThe N alloy must overcome some growth difficult problems.
Difficult problem be since between InN and the GaN 11% lattice do not match cause at In
xGa
1- xWhat take place among the N is separated.Proved when using lower temperature, can pass through MBE (molecular beam epitaxy) the single-phase metastable In that on whole compositing range, grows
xGa
1-xN.Another difficult problem is that vapour pressure deficit influences In between InN and the GaN
xGa
1-xThe high quality growth of N alloy.Being in lower depositing temperature can increase the combination of indium.Growth interface place under higher temperature, since be accompanied by decomposition pressure under the high temperature of nearly equilibrium condition than big-difference, the distribution coefficient of indium between gas phase and solid phase is much larger than the situation 800 ℃ of following times.Under 500 ℃ lower temperature, distribution coefficient approaches one, means to expect non-equilibrium (reaction-limited) condition.Also proved under 800 ℃ (the typical growth temperature T that in LED makes, are used for traditional I nGaN MQW), supposed the situation when being similar to steam, had the quick variation in the solid synthetic, then for middle synthetic, the control of synthetic becomes very difficult.The entering ratio of the N/III family metal that in addition, selection is best directly receives the influence of specified depositing temperature.In traditional M OCVD, the ammonia decomposition efficiency is confirmed actual N/III family metal ratio.Yet, because NH
3Decomposition efficiency is design of dependent reaction device and temperature to a great extent, therefore is difficult to obtain definite NH
3Decomposition efficiency.When depositing temperature lower (≤600 ℃), the N/III family metal ratio of entering is certain to enough high with the enough levels of keeping active nitrogen and the formation of avoiding In to drip.Be higher than 650 ℃ along with temperature is elevated to, N/III family metal ratio is certain to suitably reduce, and is not attached in the film thereby excessive hydrogen partial pressure can not suppress In.
Embodiments of the invention improve In through being used to allow the easy control to N/III family metal ratio from the active nitrogen permission of plasma in the reaction of lower temperature and through avoiding ammonia
xGa
1-xThe formation of N.
In one embodiment; Distribution assembly 20 can be connected to cleaning agent; And be configured to generate the plasma of cleaning agent and provide carry out downstream from the free radical kind of plasma and clean, such as detailed path 30, locular wall, substrate support surface and exhaust apparatus etc.In one embodiment, cleaning agent comprises chlorine.
Fig. 2 is the schematic section side view of MOCVD according to an embodiment of the invention chamber 200.MOCVD chamber 200 is configured to through the MOCVD process, forms one or more III family metal nitride film from nitrogen free radical and metallorganic precursor.
First source of the gas 234 is connected to internal volume 228 to internal volume 228 nitrogenous gas to be provided.When second electrode 226 is applied RF power, can in internal volume 228, generate capacitive plasma.
In one embodiment, distribution assembly 220 can be through fixing by the anchor clamps of processing such as insulating material such as potteries 27.In one embodiment, anchor clamps 227 are by aluminium oxide (Al
2O
3) process.
In one embodiment, second electrode 226 can be the flat disc that forms by such as electric conducting materials such as metal or alloy.In one embodiment, second electrode 226 is formed by stainless steel.Insulator 224 can be by forming such as potteries such as aluminium nitride (ALxNy).
In one embodiment, distribution assembly 220 is configured to generate plasma within it so that nitrogenous source is decomposed, and when the RF field of handling volume 218 and plasma is isolated, with the free radical in the plasma, supplies to and handle volume 218.
In one embodiment, the electric field of shielding plasma can be realized through in the individual channel 230 that connects internal volume 228 and processing volume 218, one or more baffle plate characteristics being set.
Fig. 3 A is the partial side view in cross section of first electrode 222.First electrode 222 have be configured to make free radical internally volume 228 flow to outside a plurality of first paths 230.A plurality of first paths 230 can be evenly distributed on first electrode 222.In one embodiment, shown in Fig. 3 B a plurality of first paths 230 with the hexagon patterned arrangement.
Return Fig. 3 A, path 230 comprises the taper wider passages 230a that is connected to narrower boring 230b.Taper wider passages 230a have towards the broad opening of internal volume 228 be connected to narrower boring 230b than narrow opening.The aspect ratio of narrower boring 230b is adjusted into plasma is remained in the internal volume 228.In one embodiment, tapered channel 230a can have about 22 ° angle.In one embodiment, tapered channel 230a can have the length of about 8mm.
Narrower boring 230b is configured to provide baffle plate so that plasma is remained on wherein.The aspect ratio of diameter, length or length and diameter can be stressed, the free radical kind in the flow rate, plasma or the influence of other effects.In one embodiment, the aspect ratio of the length of narrower boring 230b and diameter can be between about 5: 1 to about 20: 1.In one embodiment, narrower boring 230b can have at about 0.5mm to the diameter between about 12mm.In one embodiment, narrower boring 230b can have the length of about 12mm.
Turn back to Fig. 3 A, first electrode 222 has the alternate path 232 that is formed on wherein, second source of the gas 236 (shown in Fig. 2) to be provided and to handle being connected between the volume 218.Alternate path 232 has a plurality of opening 232a on the surf zone that is evenly distributed in first electrode 222 corresponding with pedestal 212.The diameter of the height of alternate path 232 and opening 232a can be adjusted with the inequality in the gas distribution that reduces to be caused by the pressure oscillation in the alternate path 232.In one embodiment, alternate path 232 has the height of about 6mm, and the second opening 232a has the length of about 4mm.Fig. 3 D illustrates an embodiment of alternate path 232.
Layout shown in Fig. 3 A-3D has 2: the ratio of opening 232a of locating narrower boring 230b and second source of the gas of 1 first source of the gas.Yet, also can expect other layout according to embodiments of the invention.
Shown in Fig. 3 A, first electrode 222 can be formed to enable forming of path and passage by four disk 222a, 222b, 222c and 222d.Tapered channel 230a and cooling duct 245 form in disk 222a.Disk 222b has a plurality of through holes, and these a plurality of through holes provide the length part that is formed on narrower boring 230b wherein.Disk 222a and 222b can link together through brazing.Disk 222c has a plurality of through holes that the length of narrower boring 230b part is provided and the slots that is used for alternate path 232.Disk 222d has the through hole of the length part that is used for opening 232a and narrower boring 230b.
In one embodiment, disk 222a, 222b, 222c can be formed and linked together through brazing by aluminium, and disk 222d is formed by stainless steel and link together with disk 222c through expand (explosion).
In one embodiment, first electrode 222 can be piled up by conducting metal, cermet compositions, the pottery with embedded electrode or ceramic-metallic layer and form.
In one embodiment, second source of the gas 236 is configured to provide metallo-organic compound.In one embodiment, second source of the gas 236 be used to form gallium nitride film such as trimethyl gallium (TMG) or triethyl group gallium gallium sources such as (TEG).
Between the MOCVD of the gallium nitride film that utilizes MOCVD chamber 200 depositional stage, like you; Flow into such as nitrogenous sources such as nitrogen in the internal volume 228 of distribution assembly 220, when wherein being lighted owing to be applied to first and second electrodes 222, the RF power between 226, nitrogenous source is decomposed when the plasma of nitrogen.Nitrogen free radical (nitrogen-atoms) flow into through first path 230 then and handles volume 218 freely.Simultaneously, flow into processing volume 218 such as gallium sources such as TMG or TEG from second source of the gas 236.Substrate 214 and/or processing volume 218 are heated to the temperature that allows nitrogen free radical and metal precursor reaction, and on substrate 214, form one or more nitride films.In one embodiment, substrate 214 is heated to about 700 ℃ temperature.
Fig. 4 is the explanatory view according to the HVPE device 100 of an embodiment.Device 100 comprises the chamber 102 by lid 104 sealings.
Distribution assembly 106 from the processing gas of first source of the gas 110 top through being arranged in chamber 102 is transported to chamber 102.In one embodiment, source of the gas 110 can comprise nitrogen or nitrogen-containing compound.Distribution assembly 106 limits with locular wall 108 and handles volume 107.Pedestal 114 is arranged in the processing volume 107 and is configured to support one or more substrates 116.
Distribution assembly 106 is configured to produce the plasma from source of the gas, and not handling under the condition of electric field that volume 107 is exposed to plasma, will being transported to from the free radical of plasma and handling volume 107.
Distribution assembly 106 comprise first electrode 161, second electrode 163 and be arranged in first electrode 161 and second electrode 163 between insulator 162.
Distribution assembly 106 comprise first electrode 161, second electrode 163 and be arranged in first electrode 161 and second electrode 163 between insulator 162.First electrode 161, insulator 162 and second electrode 163 limit internal volumes 164.In one embodiment, first electrode 161 is coupled to RF (radio frequency) ground wire, and second electrode 163 is coupled to RF power supply 105, and insulator 162 is with first electrode 161 and second electrode, 163 electric insulations.
First source of the gas 110 is connected to internal volume 164 to internal volume 164 one or more reacting gass to be provided.When second electrode 163 is applied RF power, can in internal volume 164, generate capacitive plasma.
As shown in Figure 5, first electrode 161 has a plurality of first paths 165 that are formed on wherein.Individual channel 165 is connected to internal volume 164 and handles volume 107.In one embodiment, individual channel 165 comprises the tapered channel 173 that is connected to narrower boring 174.In one embodiment, the aspect ratio of the length of narrower boring 174 and diameter can be between about 5: 1 and 20: 1.First electrode 161 also has the cooling duct that is formed on wherein.In one embodiment, first electrode 161 can be formed by two disks 171,172 that link together.
In one embodiment, can introduce through the wall 108 of distribution assembly 106 or chamber 102 such as inert gases such as helium or bimolecular nitrogen.
Device 100 comprises that also second source of the gas, 118, the second sources of the gas 118 comprise and precursor from the reaction of the nitrogenous source of first source of the gas 110.Second source of the gas 118 can have chamber 132, and it is configured to generate the precursor that is used in the processing of process chamber 102.Second source of the gas 118 is configured to provide precursor, and this precursor contains one or more III family metals that are arranged in the evaporating pan 117.In one embodiment, second source of the gas 118 comprises gallium precursor and aluminum precursor.In one embodiment, precursor comprises with liquid form and is present in the gallium in second source of the gas 118.In another embodiment, precursor comprises with solid form and is present in the aluminium in second source of the gas 118.In one embodiment, aluminum precursor can be a solid, Powdered.
In one embodiment, second source of the gas 118 is connected to reactant gas source 119.Precursor can with through make from the reactant gas flow of reactant gas source 119 through the precursor in second source of the gas 118 and/or flow through the compound gas that the top of the precursor in second source of the gas 118 produces form, be input to chamber 102.In one embodiment, reacting gas can comprise such as chlorine-containing gas such as diatomic chlorine.Chloride gas can with such as precursor source such as gallium or aluminium reactions to form chloride, this chloride is transported to process chamber 102 then.
In order to improve the effectiveness of chlorine-containing gas and precursors reaction, chlorine-containing gas can wriggle through the evaporating pan in chamber 132 117 and utilize resistance heater 120 heating.Through increasing chlorine-containing gas, can control the temperature of chlorine-containing gas sinuously through the time of staying of chamber 132.Through improving the temperature of chlorine-containing gas, chlorine can be quickly and precursors reaction.In other words, temperature is the catalyst for reaction between chlorine and the precursor.
In order to improve the reactivity of precursor, precursor can be through resistance heater 120 heating in chamber 132.For example, in one embodiment, the gallium precursor can be heated to the temperature between about 750 degrees centigrade to about 850 degrees centigrade.The chlorination reaction product can be transported to chamber 102 then.The chlorination reaction product at first gets into pipe 122, wherein in pipe 122, distributes equably.Pipe 122 is connected to another pipe 124.The chlorination reaction product gets into second pipe 124 after it has been evenly distributed in 122.The chlorination reaction product enters into chamber 102 then, and wherein the chlorination reaction product mixes with nitrogen free radical from distribution assembly 106, and on the substrate 116 that is arranged on the pedestal 114, forms nitride layer.
In one embodiment, pedestal 114 can comprise carborundum.Nitride layer can comprise for example gallium nitride or aluminium nitride.Discharge through exhaust apparatus 126 such as other product such as nitrogen and chlorine.
Chamber 102 can have the thermal gradient that produces buoyancy.For example, nitrogen free radical is installing 100 degrees centigrade approximately through 106 introducings of distribution assembly.Locular wall 108 can have about 600 degrees centigrade and arrive about 700 degrees centigrade temperature.Pedestal 114 can have about 1050 to 1150 degrees centigrade temperature.Therefore, the temperature difference in the chamber 102 can allow gas to be heated along with it and rise and descend along with its cooling.The rising of gas and decline can make nitrogen free radical and chloride gas mix.In addition, buoyancy will reduce owing to mixing the gallium nitride be deposited on the wall 108 or the amount of potassium chloride.
The heating of process chamber 102 realizes through the irradiator module 128 that utilization is arranged in pedestal 114 belows.Between depositional stage, irradiator module 128 is the main sources that are used for the heat of process chamber 102.Though illustrate and be described as irradiator module 128, should be appreciated that also and can use other heating sources.Other heating of process chamber 102 can realize through the heaters 130 that use is embedded in the wall 108 of chamber 102.Be embedded in why not heater 130 in the wall 108 is several during deposition processes provides any heat.
After deposition processes, usually substrate 116 is taken out from process chamber 102.Close irradiator module 128.Under the situation from the heat of irradiator module 128 not, chamber 102 can be cooled off rapidly.Can be deposited on gallium nitride or aluminium nitride on the wall 108 compares with wall 108 and can have different thermal coefficient of expansions.Therefore, gallium nitride or aluminium nitride can come off owing to thermal expansion.In order to prevent unwanted coming off, can open to be embedded in the heater 130 in the wall 108, maintain on the room temperature of expectation with the control thermal expansion and with chamber 102.The control of heater 130 can be once more based on the real-time feedback from thermocouple.In case irradiator module 128 is closed; Then can open or close heater 130 with the temperature maintenance of chamber 102 on preferred temperature, thereby gallium nitride or aluminium nitride can not come off and not pollute substrate or drop on the pedestal 114 and cause uneven pedestal 114 surfaces.Through locular wall 108 being maintained on the temperature of rising, will be more effective during the deposit of chlorine on cleaning from 108.
Though discussed through distribution assembly 106 introduce chlorine-containing gas and with the middle corresponding zone of chamber 102 in carry precursor, should be appreciated that, can adjust the introducing position of gas as required.
Though utilize embodiments of the invention that the formation of metal nitride film has been discussed, need other processes of free radical also can carry out through apparatus and method of the present invention.
Though the description of front to embodiments of the invention, can under the condition that does not break away from base region of the present invention, can design of the present invention other with more embodiment, and scope of the present invention is confirmed by claims subsequently.
Claims (15)
1. chamber that is used to handle one or more substrates, said chamber comprises:
The chamber main body, it limits handles volume;
Pedestal, it is arranged in the said processing volume and is configured to support said one or more substrate;
The distribution assembly; It is arranged in said pedestal top; Wherein said distribution assembly is configured to generate plasma, and in electric field isolation with said processing volume and said plasma, will supply to said processing volume from one or more free radical kinds of said plasma;
RF (radio frequency) power supply, it is coupled to said distribution assembly;
The first reactant source of the gas, it is coupled to said distribution assembly; And
The second reactant source of the gas, it is communicated with said processing volume fluid ground.
2. chamber according to claim 1, wherein said distribution assembly comprises:
First electrode; It has a plurality of first paths of second side of first side that connects said first electrode and said first electrode; Said first side of wherein said first electrode is to said processing volume, and each first path have on said first side than narrow opening and the broad opening on said second side;
Second electrode; It is basically parallel to said first electrode; Said second side of wherein said first electrode is to said second electrode; Plasma generates volume defining between said first electrode and said second electrode, and the said first reactant source of the gas is connected to the inlet that said plasma generates volume; And
Insulator; Its said first electrode and said second electrode around near, be arranged between said first electrode and said second electrode; And the electric insulation between said first electrode and said second electrode is provided; Wherein said second electrode is coupled to said RF power supply, and said first electrode grounding.
3. chamber according to claim 2, wherein each first path be connected to towards the boring opening of said second side of said first electrode, limit towards the tapered opening of said first side of said first electrode.
4. chamber according to claim 3, the ratio of the degree of depth of wherein said boring and diameter is between about 5: 1 to about 20: 1.
5. chamber according to claim 3; Wherein said first electrode has a plurality of alternate paths; Each alternate path limits and is connected to the internal gas passage that is distributed in said first electrode the boring opening for said second side of said first electrode, and said internal gas passage is connected to the said second reactant source of the gas.
6. chamber according to claim 2; Also comprise the air inlet choma; Said air inlet is periphery and puts in the said processing volume between said pedestal and said distribution assembly, and wherein said air inlet choma is connected to the said second reactant source of the gas and has a plurality of openings that are communicated with said processing volume fluid ground.
7. chamber according to claim 6, the wherein said second reactant source of the gas comprises:
The product evaporating pan;
The first product source, it is arranged in the said product evaporating pan;
The second product source, it is coupled to said product evaporating pan; And
Heating element, it is coupled to said product evaporating pan.
8. distribution assembly that is used for the free radical of reactant gas is supplied to processing region, said distribution assembly comprises:
First electrode; It has a plurality of first paths of second side of first side that connects said first electrode and said first electrode; First side of wherein said first electrode is configured to towards said processing region, and each first path have on said first side than narrow opening and the broad opening on said second side;
Second electrode, it is basically parallel to said first electrode, and said second side of wherein said first electrode is to said second electrode, and plasma generates volume defining between said first electrode and said second electrode; And
Insulator, its near around said first electrode and said second electrode, be arranged between said first electrode and said second electrode, and the electric insulation between said first electrode and said second electrode is provided.
9. distribution assembly according to claim 8, wherein said first electrode electricity are coupled to RF (radio frequency) ground wire, and said second electrode electricity is coupled to the RF power supply, and said a plurality of first path is configured to the RF field is remained in the said distribution assembly.
10. distribution assembly according to claim 9, wherein each first path be connected to towards the boring opening of said second side of said first electrode, limit towards the tapered opening of said first side of said first electrode.
11. distribution assembly according to claim 10, the ratio of the degree of depth of wherein said boring and diameter is between about 5: 1 to about 20: 1.
12. a method that is used to handle one or more substrates said method comprising the steps of:
Said one or more substrates are positioned on the pedestal in the processing volume that is arranged in process chamber, wherein said process chamber comprises the distribution assembly that is arranged in said pedestal top, and said distribution assembly has plasma and generates volume;
The said plasma that makes first reacting gas flow into said gas distributing chamber generates volume;
, said plasma lights plasma in generating volume to generate the free radical of said first reacting gas;
When said processing volume and said plasma are isolated, the said free radical of said first reacting gas is incorporated into said processing volume;
Make second reacting gas flow into said processing volume; And
On said one or more substrates, form film, wherein said film is the product of said first reacting gas and said second reacting gas.
13. method according to claim 12; Wherein said distribution assembly comprises towards first electrode of said pedestal and second electrode that is arranged in said first electrode top; Said plasma generates volume defining between said first electrode and said second electrode; Said first electrode comprises and connects a plurality of first paths that said plasma generates volume and said processing volume, and the step of lighting said plasma comprises said second electrode is applied RF (radio frequency) power supply and with the step of the said first electrode electricity ground connection.
Comprise III family metal 14. method according to claim 13, wherein said first reacting gas are nitrogenous source and said second reacting gas, and the step that makes said second reacting gas flow into said processing volume may further comprise the steps:
Under away from the situation of said process chamber, heat said second reacting gas; And
Through being arranged in air inlet choma in the said processing volume between said distribution assembly and said pedestal, said second reacting gas being incorporated in the said processing volume.
15. a method that is used for cleaning process room said method comprising the steps of:
The plasma that makes purge gas flow into the distribution assembly of managing the chamber everywhere generates volume, and wherein said distribution assembly comprises:
First electrode; It has a plurality of first paths of second side of first side that connects said first electrode and said first electrode; Said first side of wherein said first electrode is configured to the processing volume towards said process chamber, and each first path have on said first side than narrow opening and the broad opening on said second side;
Second electrode, it is basically parallel to said first electrode, and said second side of wherein said first electrode is to said second electrode, and said plasma generates volume defining between said first electrode and said second electrode; And
Insulator, its near around said first electrode and said second electrode, be arranged between said first electrode and said second electrode, and the electric insulation between said first electrode and said second electrode is provided;
In said plasma generates volume, light plasma, to generate the free radical of said purge gas; And
When the said processing volume of said process chamber and said plasma are isolated, the said free radical of said purge gas is incorporated into said processing volume.
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| US61/227,664 | 2009-07-22 | ||
| PCT/US2010/042773 WO2011011532A2 (en) | 2009-07-22 | 2010-07-21 | Hollow cathode showerhead |
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| CN1501452A (en) * | 2002-11-13 | 2004-06-02 | ���ڻ���ʽ���� | Plasma machining apparatus |
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| CN103451627A (en) * | 2013-06-04 | 2013-12-18 | 北京希睿思科技有限公司 | Integrated spray head for vapor deposition |
| CN103305906A (en) * | 2013-06-08 | 2013-09-18 | 光垒光电科技（上海）有限公司 | Reaction chamber of epitaxial deposition nitriding III-group or nitriding II--group material |
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| CN107768226A (en) * | 2014-08-29 | 2018-03-06 | 朗姆研究公司 | Ion shower and lens combination for ion beam grinding |
| CN107768226B (en) * | 2014-08-29 | 2020-03-31 | 朗姆研究公司 | Ion injector and lens system for ion beam milling |
| US10825652B2 (en) | 2014-08-29 | 2020-11-03 | Lam Research Corporation | Ion beam etch without need for wafer tilt or rotation |
| US10998167B2 (en) | 2014-08-29 | 2021-05-04 | Lam Research Corporation | Ion beam etch without need for wafer tilt or rotation |
| US11062920B2 (en) | 2014-08-29 | 2021-07-13 | Lam Research Corporation | Ion injector and lens system for ion beam milling |
| US10483085B2 (en) | 2014-10-21 | 2019-11-19 | Lam Research Corporation | Use of ion beam etching to generate gate-all-around structure |
| US11289306B2 (en) | 2016-02-25 | 2022-03-29 | Lam Research Corporation | Ion beam etching utilizing cryogenic wafer temperatures |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011011532A4 (en) | 2011-06-16 |
| WO2011011532A3 (en) | 2011-04-28 |
| WO2011011532A2 (en) | 2011-01-27 |
| KR20120053003A (en) | 2012-05-24 |
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Application publication date: 20120711 |