CN102570307A - Single-mode large-power THz quantum cascade laser (QCL) and manufacturing technology thereof - Google Patents
Single-mode large-power THz quantum cascade laser (QCL) and manufacturing technology thereof Download PDFInfo
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- CN102570307A CN102570307A CN2012100236547A CN201210023654A CN102570307A CN 102570307 A CN102570307 A CN 102570307A CN 2012100236547 A CN2012100236547 A CN 2012100236547A CN 201210023654 A CN201210023654 A CN 201210023654A CN 102570307 A CN102570307 A CN 102570307A
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Abstract
The invention provides a single-mode large-power THz quantum cascade laser (QCL) and a manufacturing technology thereof. The single-mode large-power THz QCL comprises a two-dimensional photonic crystal waveguide located on a center and a first order grating waveguide distributed around the two-dimensional photonic crystal waveguide. By using the single-mode large-power THz QCL of the invention, output power of the THz laser of the center area waveguide can be substantially increased; a single-mode narrow line width of the THz laser can be guaranteed; a working mode set by the laser is only fed back; a lateral high-order mode can be inhibited; a quality factor of a photonic crystal resonator can be increased simultaneously.
Description
Technical field
The invention belongs to the laser technical field of semiconductors, relate to a kind of Terahertz quantum cascaded laser, be specifically related to high-power Terahertz quantum cascaded laser of a kind of single mode and manufacture craft thereof.
Background technology
(quantum cascade laser QCL) as a kind of important terahertz emission source, has advantages such as volume is little, in light weight, easy of integration to Terahertz (THz) QCL, is a research focus in Terahertz field.The research of Terahertz quantum cascaded laser mainly concentrates on active area and two aspects of waveguide, requires device to have performances such as elevated operating temperature, low-threshold power current density, high conversion efficiency, high-output power, the narrow spectral line width of single mode, little far-field divergence angle.
The Terahertz quantum cascaded laser waveguiding structure mainly contains single face metal waveguide and dual-surface metal waveguide, and wherein dual-surface metal waveguide is little to the THz wave loss, the mode confinement effect is strong; The dual-surface metal waveguide laser has the working temperature of lower threshold current density and Geng Gao.The outgoing of laser has edge-emission and two kinds of forms of surface emitting.
The edge-emission Terahertz quantum cascaded laser adopts two of waveguides to dissociate usually, and F-P chamber that end face forms produces resonance; Yet the F-P cavity laser tends to produce a plurality of zlasing modes; Therefore, in order to obtain stable single mode output, introduce the single order grating at the waveguide surface metal level usually.The bright dipping aperture of edge-emission Terahertz quantum cascaded laser is less, and laser beam is dispersed very much, and the beam divergence that this sub-wavelength mode confinement causes is especially obvious for the dual-surface metal waveguide laser.
The surface emitting Terahertz quantum cascaded laser has bigger emittance area, therefore is expected to have narrower beam divergence pattern and bigger power output.Second order grating can be realized the surface emissivity of laser, for second order grating surface emitting Terahertz quantum cascaded laser, the problem of existence in the vertical raster orientation beam divergence do not obtain the restriction and power output less.A kind of method that addresses the above problem suppresses dispersing of light beam for making 2 D photon crystal in waveguide surface on two dimension, the terahertz light that parallel substrate is propagated is realized the vertical substrates surface emissivity through the first-order diffraction of photonic crystal, and second-order diffraction produces resonance.The reflection of surface emitting Waveguide end face can influence the pattern of laser; The large tracts of land waveguide excites horizontal higher mode easily; An effective solution is around waveguide, to make ABSORPTION EDGE to weaken end face reflection, to suppress horizontal higher mode, still increases ABSORPTION EDGE the quality factor of photon crystal wave-guide resonant cavity is diminished.
Summary of the invention
The shortcoming of prior art the object of the present invention is to provide high-power Terahertz quantum cascaded laser of a kind of single mode and manufacture craft thereof in view of the above, and this laser output power is high, and is the surface launching Terahertz quantum cascaded laser of single mode narrow linewidth.
For realizing above-mentioned purpose and other relevant purposes, the present invention provides high-power Terahertz quantum cascaded laser of a kind of single mode and manufacture craft thereof.
The high-power Terahertz quantum cascaded laser of a kind of single mode, the high-power Terahertz quantum cascaded laser of said single mode comprise 2 D photon crystal waveguide that is positioned at the center and the single order grating waveguide that distributes around the 2 D photon crystal waveguide.
As a kind of preferred version of the present invention, the junction of said 2 D photon crystal waveguide and said single order grating waveguide is provided with tapered transmission line.
As another kind of preferred version of the present invention, said single order grating waveguide is coated with highly reflecting films at deep end face.
As another preferred version of the present invention, the structure of said 2 D photon crystal waveguide is: vertical direction be followed successively by from bottom to up heavy doping n type GaAs substrate, lower metal layer, down contact layer, active area, on contact layer, on metal level; Wherein said upward metal level and last contact layer are etched with the two-dimensional lattice hole.
As another preferred version of the present invention, the structure of said single order grating waveguide is: vertical direction be followed successively by from bottom to up heavy doping n type GaAs substrate, lower metal layer, down contact layer, active area, on contact layer, on metal level; Wherein said upward metal level and last contact layer are etched with the single order grating.
The manufacture craft of the high-power Terahertz quantum cascaded laser of a kind of single mode may further comprise the steps:
Step 2 forms another sheet substrate at another heavy doping n type GaAs substrate surface electron beam evaporation Pd/Ge/Pd/In film;
Step 3, the metal covering of two substrates is relative, and thermocompression bonding is together;
Step 4 is polished said Semi-insulating GaAs substrate, up to from the etching barrier layer predeterminable range, adopts wet etching then, erodes to etching barrier layer, removes etching barrier layer with HF acid again; Use on the wet etching attenuate contact layer to preset thickness again; Adopt lift-off technology metal level in evaporation one on the said Semi-insulating GaAs substrate; Above metal level is a masterplate, and autoregistration etches waveguide that is positioned at the center and the ridge waveguide that distributes around central waveguide; Waveguide surface at the center makes the two-dimensional lattice hole by lithography again, carves the single order grating in the ridge waveguide surface light, and it is logical quarter to go up metal level and last contact layer, forms 2 D photon crystal waveguide and single order grating waveguide.
As a kind of preferred version of the present invention, said ridge waveguide is coated with highly reflecting films at the end face away from central waveguide.
As another kind of preferred version of the present invention, said photon crystal wave-guide is circular, square or hexagon.
As another preferred version of the present invention, terahertz light resonance wavelength is identical in said 2 D photon crystal waveguide and the single order grating waveguide.
As another preferred version of the present invention, from said metal level and lower metal layer or the heavy doping n type GaAs substrate extraction electrode gone up.
As stated; High-power Terahertz quantum cascaded laser of single mode of the present invention and manufacture craft thereof; Have following beneficial effect: the high-power Terahertz quantum cascaded laser of single mode of the present invention has increased the power output of the thz laser of central area waveguide greatly, has guaranteed the single mode narrow linewidth of thz laser, the mode of operation that a feedback laser is set; Suppress horizontal higher mode, also improved the quality factor of photonic crystal resonant cavity simultaneously.
Description of drawings
Figure 1A is first kind of structure schematic top plan view of the high-power Terahertz quantum cascaded laser of single mode of the present invention.
Figure 1B is first kind of section of structure of the high-power Terahertz quantum cascaded laser of single mode of the present invention.
Fig. 2 is second kind of structural representation of the high-power Terahertz quantum cascaded laser of single mode of the present invention.
Fig. 3 is the third structural representation of the high-power Terahertz quantum cascaded laser of single mode of the present invention.
The element numbers explanation
01, heavy doping n type GaAs substrate; 02, lower metal layer;
03, contact layer under the heavy doping n type GaAs; 04, GaAs MQW cascade active area;
05, heavy doping n type GaAs goes up contact layer; 06, goes up metal level;
07,2 D photon crystal waveguide; 08, single order grating waveguide;
09, single order grating; 10, the hole of dot matrix arrangement;
11, taper coupled waveguide.
Embodiment
Below through specific instantiation execution mode of the present invention is described, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.The present invention can also implement or use through other different embodiment, and each item details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also accompanying drawing.Need to prove; The diagram that is provided in the present embodiment is only explained basic conception of the present invention in a schematic way; Satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and plotted when implementing according to reality; Kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also maybe be more complicated.
The present invention proposes high-power Terahertz quantum cascaded laser of a kind of single mode and manufacture craft thereof; This laser is based on dual-surface metal waveguide technology, forms by the 2 D photon crystal waveguide that is positioned at the center with around the single order grating waveguide that the 2 D photon crystal wave guide ring distributes.Photon crystal wave-guide and grating waveguide produce thz laser gain simultaneously, the thz laser of formation with the direction of vertical substrates from the photon crystal wave-guide surface emissivity.A plurality of grating waveguides of annular spread have improved the power output of laser greatly.This laser has been realized the surface emitting of single mode, high power, low divergence thz laser.
Do further explain below in conjunction with the accompanying drawing specific embodiments of the invention.
Embodiment
Present embodiment provides a kind of single mode high-power Terahertz quantum cascaded laser; Like Figure 1A, 1B, shown in 2 and 3, this Terahertz quantum cascaded laser comprises 2 D photon crystal waveguide that is positioned at the center and the single order grating waveguide that distributes around the 2 D photon crystal waveguide.The structure of said 2 D photon crystal waveguide is: vertical direction be followed successively by from bottom to up heavy doping n type GaAs substrate, lower metal layer, down contact layer, active area, on contact layer, on metal level; Wherein said upward metal level and last contact layer are etched with the two-dimensional lattice hole.The structure of said single order grating waveguide is: vertical direction be followed successively by from bottom to up heavy doping n type GaAs substrate, lower metal layer, down contact layer, active area, on contact layer, on metal level; Wherein said upward metal level and last contact layer are etched with the single order grating.
The high-power Terahertz quantum cascaded laser entire device of said single mode is material with GaAs; Adopt dual-surface metal waveguide technology; Waveguide vertical direction be followed successively by from bottom to up heavy doping n type GaAs substrate 01, lower metal layer 02, down contact layer 03, active area 04, on contact layer 05, on metal level 06; Wherein active area 04 is the AlGaAs/GaAs multi-quantum pit structure; Central waveguide and all around distribution waveguide surface (going up metal level and last contact layer) be etched with 2 D photon crystal and single order grating respectively, promptly form the 2 D photon crystal waveguide 07 that is positioned at the center and around the single order grating waveguide 08 of 2 D photon crystal waveguide 07 distribution.
The single order grating waveguide that distributes all around is the wide ridge waveguide of a fillet; About 100 microns of width, surface etch single order grating 09, last metal level and last contact layer are all carved logical; Grating is the slit that is arranged in parallel, and the length of slit is wide to guarantee the conducting of waveguide electricity less than the bar of ridge waveguide.Based on distribution negative feedback (DFB) principle, can form the single mode thz laser of horizontal direction transmission in the said single order grating waveguide.In order to reduce the end face loss, the single order grating waveguide plates highly reflecting films away from the end face of center.The ridge waveguide and the waveguide junction, center that distribute all around can increase a taper coupled waveguide 11 to reduce two coupling losses between the waveguide.
Figure 1A and Figure 1B are the structural representation of the high-power Terahertz quantum cascaded laser of single mode; It adopts dual-surface metal waveguide technology, and the 2 D photon crystal waveguide is circular, the single order grating waveguide be star-like be evenly distributed on the 2 D photon crystal waveguide around; Figure 1A is a vertical view, and Figure 1B is a profile.Fig. 2 is the vertical view with photonic crystal surface launching Terahertz quantum cascaded laser of four grating waveguides, and the 2 D photon crystal waveguide of center is a square.Fig. 3 is the vertical view with photonic crystal surface launching Terahertz quantum cascaded laser of six grating waveguides, and the 2 D photon crystal waveguide of center is a hexagon.The said 2 D photon crystal waveguide that is positioned at the center can be circle, square or hexagon etc., and its shape is not limited to three kinds that the present invention enumerates, and it need have bigger area, and diameter or width are about 500 microns.Big emittance area is that the high-power output of laser, low far field are dispersed advantage is provided.The waveguide surface of said central area is manufactured with 2 D photon crystal; Form the hole 10 of equilateral triangle dot matrix or the arrangement of square dot matrix through metal level on the etching and last contact layer; Wherein the cycle of dot matrix size satisfies the first-order diffraction generation vertical radiation that makes the terahertz light of a certain specific wavelength in the photon crystal wave-guide, and the second order diffraction produces resonance.And the center photon crystal wave-guide has identical resonance wavelength with the ridge waveguide that distributes on every side.
The advantage of the high-power Terahertz quantum cascaded laser of single mode of the present invention is: the ridge waveguide and the central area waveguide that distribute all around produce laser gain simultaneously; The laser of the horizontal direction transmission that ridge waveguide produces all is pooled to the central area waveguide; The first-order diffraction vertical substrates outgoing of the 2 D photon crystal through the central area waveguide has increased the power output of central area waveguide thz laser greatly; Ridge waveguide single order grating and central area waveguide 2 D photon crystal have guaranteed the single mode narrow linewidth of thz laser; The big emittance area of central area surface launching waveguide is that high-power output and the narrow far field of laser dispersed advantage is provided; The ridge waveguide that distributes has on every side also played the effect of Bragg mirror (DBR) for the 2 D photon crystal waveguide, the mode of operation that a feedback laser is set suppresses horizontal higher mode, has also improved the quality factor of photonic crystal resonant cavity simultaneously.
Present embodiment also provides the manufacture craft of the high-power Terahertz quantum cascaded laser of a kind of single mode, and its technological process is:
With the Semi-insulating GaAs is substrate, the Al of about 500 nanometer thickness of molecular beam epitaxy (MBE) growth
0.5Ga
0.5The As etching barrier layer;
The heavy doping n type GaAs of about 500 nanometer thickness of molecular beam epitaxy on said etching barrier layer (MBE) growth goes up contact layer, and its effect is to make metal and GaAs form unalloyed ohmic contact;
Molecular beam epitaxy (MBE) growth AlGaAs/GaAs alternate multiple periodic structure active area on the contact layer on said, about 10 microns of thickness;
Contact layer under MBE on the said active area grows the heavy doping n type GaAs of about 50 nanometers; Electron beam evaporation one lower metal layer on the contact layer under GaAs then, this lower metal layer can be the Ti/Au film, thick about 1 micron; So far form a slice substrate;
At another heavy doping n type GaAs substrate surface electron beam evaporation Pd/Ge/Pd/In film, about 1 micron of thickness forms another sheet substrate; The metal covering of two substrates is relative, and thermocompression bonding together;
Said Semi-insulating GaAs substrate is polished,, adopt wet etching then, erode to etching barrier layer, remove etching barrier layer with HF acid again up to about 100 microns away from etching barrier layer be; About contact layer to 50 nanometer, absorb the waveguide loss that causes on the wet etching attenuate to reduce free carrier; Adopt lift-off technology metal level on evaporation one Ti/Au on the said Semi-insulating GaAs substrate; Above metal level is a masterplate, the ridge waveguide that autoregistration etches central circular, square or hexagon waveguide and distributes all around; About 100 microns of ridge waveguide width all around, about 500 microns of central waveguide diameter or width; On central circular, square or hexagon waveguide surface and ridge waveguide surface duct, make two-dimensional lattice hole and single order grating respectively by lithography again, will go up metal level and last contact layer and carve logically, form 2 D photon crystal waveguide and single order grating waveguide.
Said ridge waveguide is coated with highly reflecting films at the end face away from central waveguide.Electrode is drawn from the said metal level and lower metal layer or heavy doping n type GaAs substrate gone up.
The preparation flow of whole laser is identical with the dual-surface metal waveguide technology of reporting usually, can't increase extra processing step, has just increased the complexity of photoetching part figure.
So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any be familiar with this technological personage all can be under spirit of the present invention and category, the foregoing description is modified or is changed.Therefore, have common knowledge the knowledgeable in the affiliated such as technical field, must contain by claim of the present invention not breaking away from all equivalence modifications of being accomplished under disclosed spirit and the technological thought or changing.
Claims (10)
1. high-power Terahertz quantum cascaded laser of single mode is characterized in that: the high-power Terahertz quantum cascaded laser of said single mode comprises 2 D photon crystal waveguide that is positioned at the center and the single order grating waveguide that distributes around the 2 D photon crystal waveguide.
2. the high-power Terahertz quantum cascaded laser of single mode according to claim 1 is characterized in that: the junction of said 2 D photon crystal waveguide and said single order grating waveguide is provided with tapered transmission line.
3. the high-power Terahertz quantum cascaded laser of single mode according to claim 1 is characterized in that: said single order grating waveguide is coated with highly reflecting films at deep end face.
4. the high-power Terahertz quantum cascaded laser of single mode according to claim 1, it is characterized in that: the structure of said 2 D photon crystal waveguide is: vertical direction be followed successively by from bottom to up heavy doping n type GaAs substrate, lower metal layer, down contact layer, active area, on contact layer, on metal level; Wherein said upward metal level and last contact layer are etched with the two-dimensional lattice hole.
5. the high-power Terahertz quantum cascaded laser of single mode according to claim 1, it is characterized in that: the structure of said single order grating waveguide is: vertical direction be followed successively by from bottom to up heavy doping n type GaAs substrate, lower metal layer, down contact layer, active area, on contact layer, on metal level; Wherein said upward metal level and last contact layer are etched with the single order grating.
6. the manufacture craft of the high-power Terahertz quantum cascaded laser of the described single mode of claim 1 is characterized in that, may further comprise the steps:
Step 1 is a substrate with the Semi-insulating GaAs, epitaxial growth one etching barrier layer; Contact layer in epitaxial growth one on the said etching barrier layer; Epitaxial growth one active area on the contact layer on said; Epitaxial growth contact layer once on said active area, electron beam evaporation one lower metal layer on contact layer down then; So far form a slice substrate;
Step 2 forms another sheet substrate at another heavy doping n type GaAs substrate surface electron beam evaporation Pd/Ge/Pd/In film;
Step 3, the metal covering of two substrates is relative, and thermocompression bonding is together;
Step 4 is polished said Semi-insulating GaAs substrate, up to from the etching barrier layer predeterminable range, adopts wet etching then, erodes to etching barrier layer, removes etching barrier layer with HF acid again; Use on the wet etching attenuate contact layer to preset thickness again; Adopt lift-off technology metal level in evaporation one on the said Semi-insulating GaAs substrate; Above metal level is a masterplate, and autoregistration etches waveguide that is positioned at the center and the ridge waveguide that distributes around central waveguide; Waveguide surface at the center makes the two-dimensional lattice hole by lithography again, carves the single order grating in the ridge waveguide surface light, and it is logical quarter to go up metal level and last contact layer, forms 2 D photon crystal waveguide and single order grating waveguide.
7. the manufacture craft of the high-power Terahertz quantum cascaded laser of single mode according to claim 6 is characterized in that: said ridge waveguide is coated with highly reflecting films at the end face away from central waveguide.
8. the manufacture craft of the high-power Terahertz quantum cascaded laser of single mode according to claim 6 is characterized in that: said photon crystal wave-guide is circular, square or hexagon.
9. the manufacture craft of the high-power Terahertz quantum cascaded laser of single mode according to claim 6 is characterized in that: terahertz light resonance wavelength is identical in said 2 D photon crystal waveguide and the single order grating waveguide.
10. the manufacture craft of the high-power Terahertz quantum cascaded laser of single mode according to claim 6 is characterized in that: from said metal level and lower metal layer or the heavy doping n type GaAs substrate extraction electrode gone up.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972791A (en) * | 2014-05-15 | 2014-08-06 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum cascading laser device of distributed Bragg reflection structure |
| CN104283111A (en) * | 2014-11-10 | 2015-01-14 | 中国科学院上海微系统与信息技术研究所 | Edge emitting terahertz quantum cascade laser integrated with wedge-shaped structure of grating |
| CN105703216A (en) * | 2016-04-22 | 2016-06-22 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum level cascaded laser with integration of absorption waveguide and fabrication method of terhertz quantum level cascaded laser |
| CN105742961A (en) * | 2016-04-22 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum cascade laser gain spectrum measuring device and manufacturing method thereof |
| CN106067656A (en) * | 2016-06-08 | 2016-11-02 | 中国科学院上海微系统与信息技术研究所 | A kind of Terahertz quantum cascaded image intensifer and preparation method thereof |
| CN107359135A (en) * | 2016-05-09 | 2017-11-17 | 中国科学院半导体研究所 | Transfer bonding structure of integrated device and preparation method thereof in Terahertz antenna sheet |
| US10084282B1 (en) | 2017-08-14 | 2018-09-25 | The United States Of America As Represented By The Secretary Of The Air Force | Fundamental mode operation in broad area quantum cascade lasers |
| CN108701964A (en) * | 2016-03-15 | 2018-10-23 | 株式会社东芝 | Semiconductor laser apparatus |
| JP2019197933A (en) * | 2019-08-23 | 2019-11-14 | 株式会社東芝 | Surface emission quantum cascade laser |
| JP2020136557A (en) * | 2019-02-22 | 2020-08-31 | 国立大学法人京都大学 | Two-dimensional photonic crystal surface emitting laser |
| US11031753B1 (en) | 2017-11-13 | 2021-06-08 | The Government Of The United States Of America As Represented By The Secretary Of The Air Force | Extracting the fundamental mode in broad area quantum cascade lasers |
| CN113381289A (en) * | 2021-06-10 | 2021-09-10 | 中国科学院半导体研究所 | Optical feedback structure and packaging method thereof |
| CN113422292A (en) * | 2021-06-22 | 2021-09-21 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser and manufacturing method and application thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6975664B1 (en) * | 1999-08-30 | 2005-12-13 | Agere Systems Inc. | Article comprising a two-dimensional photonic crystal coupler and method of making the same |
| CN101345393A (en) * | 2007-07-13 | 2009-01-14 | 中国科学院上海微系统与信息技术研究所 | Single-face metallic waveguide Terahertz quantum cascaded laser and production method thereof |
| CN101369715A (en) * | 2007-08-08 | 2009-02-18 | 佳能株式会社 | Structure having photonic crystal and surface-emitting laser |
-
2012
- 2012-02-02 CN CN2012100236547A patent/CN102570307A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6975664B1 (en) * | 1999-08-30 | 2005-12-13 | Agere Systems Inc. | Article comprising a two-dimensional photonic crystal coupler and method of making the same |
| CN101345393A (en) * | 2007-07-13 | 2009-01-14 | 中国科学院上海微系统与信息技术研究所 | Single-face metallic waveguide Terahertz quantum cascaded laser and production method thereof |
| CN101369715A (en) * | 2007-08-08 | 2009-02-18 | 佳能株式会社 | Structure having photonic crystal and surface-emitting laser |
Non-Patent Citations (2)
| Title |
|---|
| SUSHIL KUMAR: "Recent Progress in Terahertz Quantum Cascade Lasers", 《IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS》 * |
| Y.CHASSAGNEUX ET AL.: "Electrically pumped photonic-crystal terahertz lasers controlled by boundary conditions", 《NATURE》 * |
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| CN103972791A (en) * | 2014-05-15 | 2014-08-06 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum cascading laser device of distributed Bragg reflection structure |
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| CN107359135A (en) * | 2016-05-09 | 2017-11-17 | 中国科学院半导体研究所 | Transfer bonding structure of integrated device and preparation method thereof in Terahertz antenna sheet |
| CN106067656B (en) * | 2016-06-08 | 2018-09-28 | 中国科学院上海微系统与信息技术研究所 | A kind of Terahertz quantum cascaded image intensifer and preparation method thereof |
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| US10084282B1 (en) | 2017-08-14 | 2018-09-25 | The United States Of America As Represented By The Secretary Of The Air Force | Fundamental mode operation in broad area quantum cascade lasers |
| US11031753B1 (en) | 2017-11-13 | 2021-06-08 | The Government Of The United States Of America As Represented By The Secretary Of The Air Force | Extracting the fundamental mode in broad area quantum cascade lasers |
| JP7306675B2 (en) | 2019-02-22 | 2023-07-11 | 国立大学法人京都大学 | Two-dimensional photonic crystal surface emitting laser |
| JP2020136557A (en) * | 2019-02-22 | 2020-08-31 | 国立大学法人京都大学 | Two-dimensional photonic crystal surface emitting laser |
| JP2019197933A (en) * | 2019-08-23 | 2019-11-14 | 株式会社東芝 | Surface emission quantum cascade laser |
| JP7076414B2 (en) | 2019-08-23 | 2022-05-27 | 株式会社東芝 | Surface emission quantum cascade laser |
| CN113381289B (en) * | 2021-06-10 | 2022-05-17 | 中国科学院半导体研究所 | Optical feedback structure and packaging method thereof |
| CN113381289A (en) * | 2021-06-10 | 2021-09-10 | 中国科学院半导体研究所 | Optical feedback structure and packaging method thereof |
| CN113422292A (en) * | 2021-06-22 | 2021-09-21 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser and manufacturing method and application thereof |
| CN115548873A (en) * | 2022-12-02 | 2022-12-30 | 微源光子(深圳)科技有限公司 | Photonic crystal laser and preparation method thereof |
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Application publication date: 20120711 |