CN102530820A - Dangling syntony photon device and preparation method thereof based on silicon substrate nitride - Google Patents
Dangling syntony photon device and preparation method thereof based on silicon substrate nitride Download PDFInfo
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- CN102530820A CN102530820A CN2011104416027A CN201110441602A CN102530820A CN 102530820 A CN102530820 A CN 102530820A CN 2011104416027 A CN2011104416027 A CN 2011104416027A CN 201110441602 A CN201110441602 A CN 201110441602A CN 102530820 A CN102530820 A CN 102530820A
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Abstract
The invention discloses a suspending syntony photon device and a preparation method thereof based on silicon substrate nitride. A silicon substrate III- nitride wafer is adopted to realize a carrier, the suspending syntony photon device comprises a silicon substrate layer and a top layer nitride device layer arranged on the silicon substrate layer, wherein the silicon substrate layer is of a concave structure, and an upper part opening is a cuboid cavity; the top layer nitride device layer is positioned on a suspending part of the upper part of the cavity which is provided with a nanometer photon device structure; and the invention also discloses the preparation method of the suspending syntony photon device based on the silicon substrate nitride. The suspending syntony photon device based on the silicon substrate nitride designed by the invention is capable of having stronger limitation reservation on a light field; and the preparation method of the suspending syntony photon device based on the silicon substrate nitride designed by the invention can realize interaction of light wave and the a suspending photon device, and the method can realize the compatibility with a silicon process technology, thereby conveniently realizing an integration photon device.
Description
Technical field
The present invention proposes a kind of unsettled resonance photonic device based on the silicon substrate nitride and preparation method thereof, belongs to information material and devices field.
Background technology
From the material angle, nitride material is the GaN material particularly, has higher refractive index (~ 2.5), and is transparent at visible light, near infrared band, is a kind of optical material of excellence.Yet, because SiC and Sapphire Substrate be difficult for processing, and nitride particularly the process technology of GaN is also immature, limited the development of nitride photonic and optical micro-electromechanical device.In recent years, remedy lattice mismatch and the inconsistent residual stress that causes of thermal expansion through introducing AlN/AlGaN or other exclusive cushion, increasingly mature based on the high-quality nitride material of silicon substrate, progressively moved towards market.The companies such as Sanken of the Nitronex of the U.S., Japan have released commercial based on the silicon substrate nitride material.The high-tech material enterprise that many institutions for academic research hatch also transforms its distinctive material growing technology to business circles, 4-inch even larger sized nitride material based on silicon substrate can be provided according to user's demand.Simultaneously, the continuous breakthrough of nitride material process technology, this material system can combine with the silicon processing technique of present maturation, the novel nitride photoelectric device of extensive, low-cost preparation.Nitride material based on silicon substrate; Utilize ripe silicon etching process technology; Can carry out silicon substrate and peel off, thereby can prepare unsettled nitride film photonic device, for development is laid a good foundation towards the nitride photonic and the optical micro-electromechanical device of optic communication, light sensing.
Summary of the invention
Technical problem to be solved by this invention provides a kind ofly can have very strong restriction subsequent use to light field; Can realize light wave and unsettled nitride photonic devices interactive based on the silicon substrate nitride unsettled resonance photonic device and a kind of can be compatible with silicon processing technique, be convenient to realize the preparation method of integrated photonic device.
The present invention adopts following technical scheme for solving the problems of the technologies described above: the present invention has designed a kind of unsettled resonance photonic device based on the silicon substrate nitride; Realize that carrier is a silicon substrate III group-III nitride wafer; Comprise layer-of-substrate silicon; And be arranged on the top layer nitride device layer on the layer-of-substrate silicon, wherein:
Said layer-of-substrate silicon is a concave structure, and upper opening is the cavity of a cuboid;
The overhanging portion that said top layer nitride device layer is positioned at cuboid cavity top has the nano-photon device architecture.
As a kind of optimizing structure of the present invention: said nano-photon device architecture is circular optical grating construction or two-dimensional photon crystal structure.
As a kind of optimizing structure of the present invention: said micro-nano photonic device structure is the linear gratings structure.
The present invention has also designed a kind of unsettled resonance photon preparation of devices method based on the silicon substrate nitride; Select for use silicon substrate III group-III nitride wafer for realizing carrier; Silicon substrate III group-III nitride wafer comprises layer-of-substrate silicon, and is arranged on the top layer nitride device layer on the layer-of-substrate silicon, comprises following concrete steps:
Step (1): utilize electron beam evaporation technique to precipitate one deck hafnia film layer as etch mask layer at the top layer nitride device layer upper surface of said silicon substrate III group-III nitride wafer;
Step (2): at said etch mask layer upper surface spin coating one deck beamwriter lithography glue-line;
Step (3): utilize electron beam lithography at said beamwriter lithography glue-line definition nano-photon device architecture;
Step (4): utilize the ion beam bombardment technology that the nano-photon device architecture in the step (3) is transferred to said hafnia film layer;
Step (5): utilize the nitride etch technology that said top layer nitride device layer is run through according to the nano-photon device architecture in the step (4) and be etched to said layer-of-substrate silicon upper surface;
Step (6): utilize isotropism silicon etching technology that the bottom silicon substrate that top layer nitride device layer has nano-photon device architecture part is peeled off; Layer-of-substrate silicon forms the concave structure of symmetry, and the part that makes top layer nitride device layer have the nano-photon device architecture forms hanging structure;
Step (7): utilize the oxygen plasma ashing method to remove residual electrons bundle photoresist layer;
Step (8): utilize BHF or Vapor HF technology, remove remaining hafnia film layer.
As a kind of optimization method of the present invention: the nano-photon device architecture in the said step (3) is circular optical grating construction or two-dimensional photon crystal structure.
As a kind of optimization method of the present invention: the nano-photon device architecture in the said step (3) is the linear gratings structure.
The present invention adopts above technical scheme compared with prior art, has following technique effect:
1. the present invention has utilized the big refractive index difference of nitride material and air, makes unsettled nitride nano device architecture have very strong restriction subsequent use to light field, can realize the reciprocation of light wave and unsettled nitride photonic devices;
2. the present invention introduces hafnium oxide as etch mask layer, has solved the difficult problem of nitride processing, through the anisotropic silicon etching process, has realized unsettled nitride resonance photonic device;
3. unsettled linear gratings can be used as the polarization dependence optics, utilizes its structural symmetry, and unsettled circular grating and 2 D photon crystal can develop into the polarization insensitive optical element;
Resonance photon device exhibits significantly to the sensitiveness of device architecture parameter, surrounding medium, can be used as filtering device, high reflectance micro mirror and optical sensor spare, its technology of preparing can with the silicon processing technique compatibility, be convenient to realize integrated photonic device.
Description of drawings
Fig. 1 is the structure diagram based on the unsettled resonance photonic device of silicon substrate nitride that the present invention designs.
Fig. 2 is based on the manufacturing flow chart of the unsettled resonance photonic device of silicon substrate nitride.
Fig. 3 is the linear raster scanning electromicroscopic photograph of the unsettled nitride of silicon substrate.
Fig. 4 is the circular grating stereoscan photograph of the unsettled nitride of silicon substrate.
Fig. 5 is the optical property sketch map of the linear grating of the unsettled nitride of silicon substrate.
The specific embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is done further detailed description:
As shown in Figure 1, the present invention has designed a kind of unsettled resonance photonic device based on the silicon substrate nitride, realizes that carrier is a silicon substrate III group-III nitride wafer, and comprise layer-of-substrate silicon, and be arranged on the top layer nitride device layer on the layer-of-substrate silicon, wherein:
Said layer-of-substrate silicon is a concave structure, and upper opening is the cavity of a cuboid;
The overhanging portion that said top layer nitride device layer is positioned at cuboid cavity top has the nano-photon device architecture.
As a kind of optimizing structure of the present invention: said nano-photon device architecture is circular optical grating construction or two-dimensional photon crystal structure;
Shown in Figure 4 is the circular grating stereoscan photograph of the unsettled nitride of silicon substrate.
As a kind of optimizing structure of the present invention: said nano-photon device architecture is the linear gratings structure;
Shown in Figure 3 is the linear raster scanning electromicroscopic photograph of the unsettled nitride of silicon substrate.
As shown in Figure 2; The present invention has also designed a kind of unsettled resonance photon preparation of devices method based on the silicon substrate nitride; Select for use silicon substrate III group-III nitride wafer for realizing carrier; Silicon substrate III group-III nitride wafer comprises layer-of-substrate silicon, and is arranged on the top layer nitride device layer on the layer-of-substrate silicon, comprises following concrete steps:
Step (1): utilize electron beam evaporation technique to precipitate one deck hafnia film layer as etch mask layer at the top layer nitride device layer upper surface of silicon substrate III group-III nitride wafer;
Step (2): at said etch mask layer upper surface spin coating one deck beamwriter lithography glue-line;
Step (3): utilize electron beam lithography at said beamwriter lithography glue-line definition nano-photon device architecture;
Step (4): utilize ion bombardment that the nano-photon device architecture in the step (3) is transferred to said hafnia film layer;
Step (5): utilize the nitride etch technology that said top layer nitride device layer is run through according to the nano-photon device architecture in the step (4) and be etched to said layer-of-substrate silicon upper surface;
Step (6): utilize the anisotropic silicon lithographic technique that the bottom silicon substrate that top layer nitride device layer has nano-photon device architecture part is peeled off; Said layer-of-substrate silicon forms concave structure, and the part that makes top layer nitride device layer have the nano-photon device architecture forms hanging structure;
Step (7): utilize the oxygen plasma ashing method to remove the residual lithographic glue-line;
Step (8): utilize BHF or Vapor HF technology, remove remaining hafnia film layer, form the unsettled resonance photonic device that has the beamwriter lithography glue-line shown in Fig. 2 (b) based on the silicon substrate nitride.
As a kind of optimization method of the present invention: also comprise following concrete the processing:
As a kind of optimization method of the present invention: the nano-photon device architecture in the said step (3) is circular optical grating construction or two-dimensional photon crystal structure.
As a kind of optimization method of the present invention: the nano-photon device architecture in the said step (3) is the linear gratings structure.
Shown in Figure 5 is the optical property sketch map of the linear grating of the unsettled nitride of silicon substrate.
Claims (6)
1. the unsettled resonance photonic device based on the silicon substrate nitride realizes that carrier is a silicon substrate III group-III nitride wafer, comprises layer-of-substrate silicon, and is arranged on the top layer nitride device layer on the layer-of-substrate silicon, it is characterized in that:
Said layer-of-substrate silicon is a concave structure, and upper opening is the cavity of a cuboid;
The overhanging portion that said top layer nitride device layer is positioned at cuboid cavity top has the nano-photon device architecture.
2. according to the said unsettled resonance photonic device based on the silicon substrate nitride of claim 1, it is characterized in that: said nano-photon device architecture is circular optical grating construction or two-dimensional photon crystal structure.
3. according to the said unsettled resonance photonic device based on the silicon substrate nitride of claim 1, it is characterized in that: said nano-photon device architecture is the linear gratings structure.
4. unsettled resonance photon preparation of devices method based on the silicon substrate nitride; Select for use silicon substrate III group-III nitride wafer for realizing carrier; Silicon substrate III group-III nitride wafer comprises layer-of-substrate silicon; And be arranged on the top layer nitride device layer on the layer-of-substrate silicon, it is characterized in that comprising following concrete steps:
Step (1): adopt electron beam evaporation technique to precipitate one deck hafnia film layer as etch mask layer at the top layer nitride device layer upper surface of said silicon substrate III group-III nitride wafer;
Step (2): at said etch mask layer upper surface spin coating one deck beamwriter lithography glue-line;
Step (3): adopt electron beam lithography at said beamwriter lithography glue-line definition nano-photon device architecture;
Step (4): adopt the ion beam bombardment technology that the nano-photon device architecture in the step (3) is transferred to said hafnia film layer;
Step (5): adopt the nitride etch technology that said top layer nitride device layer is run through according to the nano-photon device architecture in the step (4) and be etched to said layer-of-substrate silicon upper surface;
Step (6): adopt isotropism silicon etching technology that the bottom silicon substrate that top layer nitride device layer has nano-photon device architecture part is peeled off; Layer-of-substrate silicon forms concave structure, and the part that makes top layer nitride device layer have the nano-photon device architecture forms hanging structure;
Step (7): adopt the oxygen plasma ashing method to remove residual electrons bundle photoresist layer;
Step (8): adopt BHF or Vapor HF technology, remove remaining hafnia film layer.
5. the unsettled resonance photon preparation of devices method based on the silicon substrate nitride according to claim 4 is characterized in that the nano-photon device architecture in the said step (3) is circular optical grating construction or two-dimensional photon crystal structure.
6. the unsettled resonance photon preparation of devices method based on the silicon substrate nitride according to claim 4 is characterized in that the nano-photon device architecture in the said step (3) is the linear gratings structure.
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Cited By (6)
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| WO2014075546A1 (en) * | 2012-11-13 | 2014-05-22 | 东北大学 | Floating type optical waveguide and preparation method therefor |
| CN104297843A (en) * | 2013-03-18 | 2015-01-21 | 南京邮电大学 | Micro-electro-mechanical adjustable nitride resonance grating manufacturing method |
| CN105445854A (en) * | 2015-11-06 | 2016-03-30 | 南京邮电大学 | Silicon substrate suspended LED optical waveguide integrated photonic device and manufacturing method thereof |
| CN105841725A (en) * | 2016-03-26 | 2016-08-10 | 南京邮电大学 | Visible light single-chip integrated sensor based on grating coupling and manufacturing method of visible light single-chip integrated sensor |
| CN109830579A (en) * | 2018-12-28 | 2019-05-31 | 南京邮电大学 | Hanging green light LED single-chip integration device and preparation method thereof |
| CN111693906A (en) * | 2020-06-24 | 2020-09-22 | 电子科技大学 | Method for processing Lorentz force magnetic field sensor of silicon-based cavity optical mechanical system |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014075546A1 (en) * | 2012-11-13 | 2014-05-22 | 东北大学 | Floating type optical waveguide and preparation method therefor |
| CN104297843A (en) * | 2013-03-18 | 2015-01-21 | 南京邮电大学 | Micro-electro-mechanical adjustable nitride resonance grating manufacturing method |
| CN104297843B (en) * | 2013-03-18 | 2017-08-11 | 南京邮电大学 | Micro electronmechanical adjustable nitride resonance grating preparation method |
| CN105445854A (en) * | 2015-11-06 | 2016-03-30 | 南京邮电大学 | Silicon substrate suspended LED optical waveguide integrated photonic device and manufacturing method thereof |
| US10386574B2 (en) | 2015-11-06 | 2019-08-20 | Nanjing University Of Posts And Telecommunications | Integrated photonic device comprising hollowed silicon substrate-based LED and optical waveguide and manufacturing method thereof |
| CN105841725A (en) * | 2016-03-26 | 2016-08-10 | 南京邮电大学 | Visible light single-chip integrated sensor based on grating coupling and manufacturing method of visible light single-chip integrated sensor |
| CN105841725B (en) * | 2016-03-26 | 2018-06-01 | 南京邮电大学 | Based on grating coupled visible ray monolithic integrated sensor and preparation method thereof |
| CN109830579A (en) * | 2018-12-28 | 2019-05-31 | 南京邮电大学 | Hanging green light LED single-chip integration device and preparation method thereof |
| CN111693906A (en) * | 2020-06-24 | 2020-09-22 | 电子科技大学 | Method for processing Lorentz force magnetic field sensor of silicon-based cavity optical mechanical system |
| CN111693906B (en) * | 2020-06-24 | 2022-02-01 | 电子科技大学 | Method for processing Lorentz force magnetic field sensor of silicon-based cavity optical mechanical system |
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Application publication date: 20120704 |