CN102513305B - The cleaning device of semi-conductor silicon chip and cleaning method thereof - Google Patents
The cleaning device of semi-conductor silicon chip and cleaning method thereof Download PDFInfo
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- CN102513305B CN102513305B CN201110458408.XA CN201110458408A CN102513305B CN 102513305 B CN102513305 B CN 102513305B CN 201110458408 A CN201110458408 A CN 201110458408A CN 102513305 B CN102513305 B CN 102513305B
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Abstract
The invention provides a kind of cleaning device of semi-conductor silicon chip, this cleaning device comprises lever, two oscillators, the balance control unit that is connected with described oscillator, described balance control unit contacts with the layer of cleaning solution on silicon chip, described two oscillators are separately fixed on described lever, described lever, oscillator and balance control unit composition equalising torque system.The present invention also provides a kind of cleaning method of semi-conductor silicon chip.The cleaning device of semi-conductor silicon chip provided by the invention and cleaning method, in the process on the ultrasonic wave utilizing oscillator to send or mega sonic wave cleaning silicon chip surface, balance is utilized to control unit judges silicon chip surface and oscillator whether keeping parallelism, and can by the height of the lever regulate oscillator of setting, silicon chip surface is made to keep being parallel to each other with oscillator all the time, thus ensure that the acoustic wave energy density of each position of silicon chip surface is identical, the cleaning dynamics that each position of silicon chip surface is reached is identical, improves cleaning performance.
Description
Technical field
The present invention relates to integrated circuit processing technique field, be specifically related to a kind of cleaning device and cleaning method thereof of semi-conductor silicon chip.
Background technology
With the continuous progress of integrated circuit fabrication process, the volume of semiconductor devices is just becoming more and more less, which results in very small particle and also becomes the manufacture and performance that are enough to affect semiconductor devices, so silicon wafer cleaning process also becomes more and more important.For the particle that these are small, traditional fluid cleaning method effectively can not remove them.This is the boundary layer owing to there is a geo-stationary between semi-conductor silicon chip surface and cleaning liquid.When the particle diameter being attached to silicon chip surface is less than boundary layer thickness, the flowing of cleaning liquid cannot to particle generation effect.In order to improve this problem, ultrasonic wave and mega sonic wave have been introduced into semiconductor cleaning process.Ultrasonic energy can produce small bubble in water, and the vibrations produced when bubble pops are attached to molecule on silicon chip by contributing to peeling off those, thus clean silicon chip.
As everyone knows, when silicon chip cleans in process cavity, the reason such as to be with the passing of time out of shape or expand with heat and contract with cold due to frame for movement, all can not to keep horizontal level with ultrasonic oscillator all the time.If silicon chip and ultrasonic oscillator shape at a certain angle, so the ultrasound energy density of each position of silicon chip will be different, and the cleaning that may produce sector region is uneven.
Summary of the invention
The object of the invention is to the cleaning device and the cleaning method thereof that propose a kind of semi-conductor silicon chip, with solve silicon chip and oscillator not parallel time produce sector region and clean uneven problem.
To achieve these goals, the invention provides a kind of cleaning device of semi-conductor silicon chip, this cleaning device comprises lever, two oscillators, the balance control unit that is connected with described oscillator, described balance control unit contacts with the layer of cleaning solution on silicon chip, described two oscillators are separately fixed on described lever, described lever, oscillator and balance control unit composition equalising torque system.
Preferably, in the cleaning device of described semi-conductor silicon chip, described two oscillators lay respectively at the both sides of the fulcrum of described lever.
Preferably, in the cleaning device of described semi-conductor silicon chip, described lever is flexibly connected on the robotic arm by the fulcrum of described lever.
Preferably, in the cleaning device of described semi-conductor silicon chip, described oscillator is connected with signal generator.
Preferably, in the cleaning device of described semi-conductor silicon chip, the power output of described signal generator is 157-3532 watt.
Preferably, in the cleaning device of described semi-conductor silicon chip, the frequency of described signal generator is 200-3000 KHz.
Preferably, in the cleaning device of described semi-conductor silicon chip, described balance control unit is buoyancy elements.
Preferably, in the cleaning device of described semi-conductor silicon chip, described oscillator is ultrasonic oscillator or mega sonic wave oscillator.
Preferably, the cleaning device of described semi-conductor silicon chip also comprises the silicon-wafer holder of rotating basis and fixing silicon chip, and described silicon-wafer holder is fixed on described rotating basis.
Present invention also offers a kind of cleaning method of semi-conductor silicon chip, this cleaning method comprises: use cleaning fluid cleaning silicon chip surface, form layer of cleaning solution at described silicon chip surface; The position of adjustment (adjusting) lever, makes to be fixed on the balance control unit that the oscillator on described lever connects and contacts with described layer of cleaning solution; Opening described oscillator makes described oscillator normally work; Described lever reaches equalising torque according to the buoyancy adjustment of the described cleaning fluid that balance control unit is subject to lever system.
Preferably, in the cleaning method of described semi-conductor silicon chip, utilize the mechanical arm be connected with described lever to reduce the position of described lever, described balance control unit is contacted with described layer of cleaning solution.
Preferably, in the cleaning method of described semi-conductor silicon chip, described oscillator is connected with signal generator, and the power output of described signal generator is 157-3532 watt, and the frequency of described signal generator is 200-3000 KHz.
Compared with prior art, the cleaning device of semi-conductor silicon chip provided by the invention, in the process on the ultrasonic wave utilizing oscillator to send or mega sonic wave cleaning silicon chip surface, balance is utilized to control unit judges silicon chip surface and oscillator whether keeping parallelism, and can by the height of the lever regulate oscillator of setting, silicon chip surface is made to keep being parallel to each other with oscillator all the time, thus ensure that the acoustic wave energy density of each position of silicon chip surface is identical, the cleaning dynamics that each position of silicon chip surface is reached is identical, improves cleaning performance.
The cleaning method of semi-conductor silicon chip provided by the invention, control unit will be balanced contact with layer of cleaning solution, silicon chip surface and oscillator whether keeping parallelism is judged according to the buoyancy be subject to, and the lever be connected with oscillator can regulate the height of oscillator to reach equalising torque to make lever system, i.e. silicon chip surface and oscillator keeping parallelism, ensure that the cleaning uniformity of silicon chip surface.
Accompanying drawing explanation
Figure 1 shows that the structural profile schematic diagram of the cleaning device of the semi-conductor silicon chip of present pre-ferred embodiments;
Figure 2 shows that the flow chart of steps of the cleaning method of the semi-conductor silicon chip of present pre-ferred embodiments.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the cleaning device of the semi-conductor silicon chip that the present invention proposes and cleaning method are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only for object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, the cleaning device of semi-conductor silicon chip provided by the invention, in the process on the ultrasonic wave utilizing oscillator to send or mega sonic wave cleaning silicon chip surface, balance is utilized to control unit judges silicon chip surface and oscillator whether keeping parallelism, and can by the height of the lever regulate oscillator of setting, silicon chip surface is made to keep being parallel to each other with oscillator all the time, thus ensure that the acoustic wave energy density of each position of silicon chip surface is identical, the cleaning dynamics that each position of silicon chip surface is reached is identical, improves cleaning performance.The cleaning method of semi-conductor silicon chip provided by the invention, control unit will be balanced contact with layer of cleaning solution, silicon chip surface and oscillator whether keeping parallelism is judged according to the buoyancy be subject to, and the lever be connected with oscillator can regulate the height of oscillator to reach equalising torque to make lever system, i.e. silicon chip surface and oscillator keeping parallelism, ensure that the cleaning uniformity of silicon chip surface.
Please refer to Fig. 1, Figure 1 shows that the structural profile schematic diagram of the cleaning device of the semi-conductor silicon chip of present pre-ferred embodiments.The invention provides a kind of cleaning device of semi-conductor silicon chip, the balance control unit 13 that this cleaning device comprises lever 11, two oscillators 12, is connected with described oscillator 12, described balance control unit 13 contacts with the layer of cleaning solution 15 on silicon chip 14, described two oscillators 12 are separately fixed on described lever 11, and described lever 11, oscillator 12 and balance control unit 13 form equalising torque system.
Particularly, the cleaning device of semi-conductor silicon chip also comprises the silicon-wafer holder 18 of rotating basis 17 and fixing silicon chip 14, and described silicon-wafer holder 18 is fixed on described rotating basis 17, in the present embodiment, utilizes rotating basis 17 pairs of silicon chips 14 to carry out rotary-cleaning.
Further, described oscillator 12 is connected with signal generator (not shown in FIG.), and the power output of signal generator is 157-3532 watt, and its frequency is 200-3000 KHz.
In the present embodiment, described balance control unit 13 is buoyancy elements, to be contacted judge silicon chip 14 surface and oscillator 12 whether keeping parallelism by buoyancy elements with the layer of cleaning solution 15 on silicon chip 14 surface.Described oscillator 12 is ultrasonic oscillator or mega sonic wave oscillator, and in the present embodiment, described oscillator 12 is ultrasonic oscillator.
In the present embodiment, described two oscillators 12 lay respectively at the both sides of the fulcrum of described lever 11, and described lever 11 is movably connected on mechanical arm 16 by the fulcrum of described lever.In order to clearly set forth the embodiment of the present invention, fulcrum oscillator 12a on one side connects balance control unit 13a, the oscillator 12b of fulcrum another side connects balance control unit 13b, and oscillator 12a, 12b are the device that shape and structure and function are all identical, balance control unit 13a, 13b are also the element that shape and structure and function are identical.
Figure 2 shows that the flow chart of steps of the cleaning method of the semi-conductor silicon chip of present pre-ferred embodiments.With reference to Fig. 2, the cleaning method of the semi-conductor silicon chip that the embodiment of the present invention provides, comprising:
S21, use cleaning fluid cleaning silicon chip surface, form layer of cleaning solution at described silicon chip surface;
The position of S22, adjustment (adjusting) lever, makes to be fixed on the balance control unit that the oscillator on described lever connects and contacts with described layer of cleaning solution;
S23, open described oscillator described oscillator is normally worked;
S24, described lever reach equalising torque according to the buoyancy adjustment of the described cleaning fluid that balance control unit is subject to lever system.
Silicon chip 14 surface utilizes cleaning fluid to carry out rotary cleaning, forms layer of cleaning solution 15 on the surface of described silicon chip 14.Before the height carrying out adjustment (adjusting) lever 11, first determine whether whole lever system reaches equalising torque, after determining equalising torque, utilize the position of mechanical arm 16 adjustment (adjusting) lever 11 be connected with lever 11, the both sides of lever 11 are fixed with oscillator 12a, 12b, make oscillator 12a, the balance control unit 13a that 12b connects respectively, 13b contacts with layer of cleaning solution 15, open oscillator 12a, 12b makes it normally work, balance control unit 13a, 13b is subject to layer of cleaning solution 15 respectively and is applied to buoyancy on it, if silicon chip 14 surface and oscillator 12a, 12b is keeping parallelism not, then balance control unit 13a, it is different that 13b and layer of cleaning solution 15 contact the depth, namely control unit 13a is balanced, the buoyancy that 13b is subject to varies in size, according to balance control unit 13a, the stressing conditions adjustment (adjusting) lever 11 of 13b maintains the equalising torque of lever system.The buoyancy that the buoyancy that such as balance control unit 13a is subject to is subject to than balance control unit 13b is large, the degree of depth of the layer of cleaning solution 15 that the depth ratio balance control unit 13b then balancing the layer of cleaning solution 15 that control unit 13a immerses immerses is larger, namely silicon chip 14 surface tilts near balance control unit 13a, therefore, need to be regulated by lever 11 balance control unit 13a is moved along the direction away from silicon chip 14 surface, finally make oscillator 12a, 12b and the surperficial keeping parallelism of silicon chip 14, meanwhile, lever system reaches equalising torque.Ultrasonic oscillator can be made to send ultrasonic energy in the distribution of silicon chip 14 surface uniform by the adjustment of above-mentioned lever 11, finally improve cleaning performance.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (12)
1. the cleaning device of a semi-conductor silicon chip, it is characterized in that, comprise lever, two oscillators, the balance control unit that is connected with described oscillator, described balance control unit contacts with the layer of cleaning solution on silicon chip and judges the surface of described silicon chip and described oscillator whether keeping parallelism, described two oscillators are separately fixed at the both sides of the fulcrum of described lever, and described lever is for regulating the height of described two oscillators to make the surface of described silicon chip and described oscillator keeping parallelism; Described lever, oscillator and balance control unit composition equalising torque system.
2. the cleaning device of semi-conductor silicon chip according to claim 1, is characterized in that, described lever is flexibly connected on the robotic arm by the fulcrum of described lever.
3. the cleaning device of semi-conductor silicon chip according to claim 1, is characterized in that, described oscillator is connected with signal generator.
4. the cleaning device of semi-conductor silicon chip according to claim 3, is characterized in that, the power output of described signal generator is 157 ~ 3532 watts.
5. the cleaning device of semi-conductor silicon chip according to claim 3, is characterized in that, the frequency of described signal generator is 200 ~ 3000 KHzs.
6. the cleaning device of semi-conductor silicon chip according to any one of claim 1 to 5, it is characterized in that, described balance control unit is buoyancy elements, the height of two oscillators described in the buoyancy adjustment of the described cleaning fluid that described lever is subject to according to described balance control unit.
7. the cleaning device of semi-conductor silicon chip according to any one of claim 1 to 5, is characterized in that, described oscillator is ultrasonic oscillator or mega sonic wave oscillator.
8. the cleaning device of semi-conductor silicon chip according to claim 1, is characterized in that, also comprises the silicon-wafer holder of rotating basis and fixing silicon chip, and described silicon-wafer holder is fixed on described rotating basis.
9. utilize a cleaning method for the cleaning device of the semi-conductor silicon chip described in claim 1, it is characterized in that, comprising:
Use cleaning fluid cleaning silicon chip surface, form layer of cleaning solution at described silicon chip surface;
The position of adjustment (adjusting) lever, makes to be fixed on the balance control unit that the oscillator on described lever connects and contacts with described layer of cleaning solution;
Opening described oscillator makes described oscillator normally work;
Described lever reaches equalising torque according to the buoyancy adjustment of the described cleaning fluid that balance control unit is subject to lever system.
10. cleaning method according to claim 9, is characterized in that, described silicon chip is fixed on silicon-wafer holder, and described silicon-wafer holder is placed on rotating basis, utilizes rotating basis to carry out rotary-cleaning to described silicon chip surface.
11. cleaning methods according to claim 9, is characterized in that, utilize the mechanical arm be connected with described lever to reduce the position of described lever, described balance control unit is contacted with described layer of cleaning solution.
12. cleaning methods according to claim 9, is characterized in that, described oscillator is connected with signal generator, and the power output of described signal generator is 157 ~ 3532 watts, and the frequency of described signal generator is 200 ~ 3000 KHzs.
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| CN201110458408.XA CN102513305B (en) | 2011-12-30 | 2011-12-30 | The cleaning device of semi-conductor silicon chip and cleaning method thereof |
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| CN201110458408.XA CN102513305B (en) | 2011-12-30 | 2011-12-30 | The cleaning device of semi-conductor silicon chip and cleaning method thereof |
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| CN102513305B true CN102513305B (en) | 2016-03-02 |
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| CN106881291A (en) * | 2017-03-28 | 2017-06-23 | 南京联信自动化科技有限公司 | The liquid crystal panel cleaning device of sand disc |
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|---|---|---|---|---|
| US4643774A (en) * | 1984-04-19 | 1987-02-17 | Sharp Corporation | Method of washing and drying substrates |
| EP0589237A2 (en) * | 1992-08-27 | 1994-03-30 | Applied Materials, Inc. | Vacuum etch chamber and method for treating parts thereof |
| US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06244164A (en) * | 1993-02-22 | 1994-09-02 | Hitachi Ltd | Ultrasonic cleaning device |
| JPH06333906A (en) * | 1993-05-24 | 1994-12-02 | Toshiba Ceramics Co Ltd | Ultrasonic cleaning device |
| JP2789178B2 (en) * | 1995-08-03 | 1998-08-20 | 株式会社国際電気エルテック | Ultrasonic cleaning equipment |
| JP4442383B2 (en) * | 2004-10-12 | 2010-03-31 | 国立大学法人 東京大学 | Ultrasonic cleaning equipment |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4643774A (en) * | 1984-04-19 | 1987-02-17 | Sharp Corporation | Method of washing and drying substrates |
| EP0589237A2 (en) * | 1992-08-27 | 1994-03-30 | Applied Materials, Inc. | Vacuum etch chamber and method for treating parts thereof |
| US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
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