CN102513305A - Device and method for cleaning semiconductor silicon wafer - Google Patents
Device and method for cleaning semiconductor silicon wafer Download PDFInfo
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- CN102513305A CN102513305A CN201110458408XA CN201110458408A CN102513305A CN 102513305 A CN102513305 A CN 102513305A CN 201110458408X A CN201110458408X A CN 201110458408XA CN 201110458408 A CN201110458408 A CN 201110458408A CN 102513305 A CN102513305 A CN 102513305A
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Abstract
The invention provides a device for cleaning a semiconductor silicon wafer, which comprises a lever, two oscillators and a balance control unit connected with the oscillators, wherein the balance control unit is contacted with a cleaning solution layer arranged on the silicon wafer; the two oscillators are respectively fixed on the lever; and a moment balance system is formed by the lever, the oscillators and the balance control unit. The invention also provides a method for cleaning the semiconductor silicon wafer. The device and the method for cleaning the semiconductor silicon wafer can be used for judging whether the surface of the silicon wafer is parallel to the oscillators or not by utilizing the balance control unit and adjusting the heights of the oscillators according to the arranged lever in the process that the surface of the silicon wafer is cleaned by the ultrasonic wave or the million acoustic wave sent out by the oscillators, so that the surface of the silicon wafer is parallel to the oscillators all the time, the acoustic energy densities of all the positions on the surface of the silicon wafer can be guaranteed to be the same as one another, the cleaning force for all the positions on the surface of the silicon wafer can be ensured to be the same, and the cleaning effect is improved.
Description
Technical field
The present invention relates to the integrated circuit processing technique field, be specifically related to a kind of cleaning device and cleaning method thereof of semi-conductor silicon chip.
Background technology
Follow the continuous progress of integrated circuit fabrication process, it is more and more littler that the volume of semiconductor devices is just becoming, and this has caused very small particle also to become and has been enough to influence the manufacturing and the performance of semiconductor devices, so it is more and more important that the silicon chip cleaning also becomes.For these small particles, traditional fluid cleaning method can not be removed them very effectively.This is owing between semi-conductor silicon chip surface and cleaning liquid, exist a static relatively boundary layer.When attached to the particle diameter of silicon chip surface during less than boundary layer thickness, flowing of cleaning liquid can't be to particle generation effect.In order to improve this problem, ultrasonic wave and mega sonic wave have been introduced into the semiconductor cleaning.Ultrasonic energy can produce small bubble in water, the vibrations that when bubble pops, produced will help to peel off those attached to the molecule on the silicon chip, thereby cleans silicon chip.
As everyone knows, when silicon chip cleans,, can not all keep horizontal level all the time in process cavity with ultrasonic oscillator owing to the passing of time frame for movement be out of shape or reason such as expand with heat and contract with cold.If silicon chip and ultrasonic oscillator form certain included angle, the ultrasonic energy density of each position of silicon chip will be different so, and the cleaning that may produce sector region is inhomogeneous.
Summary of the invention
The objective of the invention is to propose a kind of cleaning device and cleaning method thereof of semi-conductor silicon chip, the generation sector region cleans uneven problem when silicon chip and oscillator are not parallel to solve.
To achieve these goals; The present invention provides a kind of cleaning device of semi-conductor silicon chip; This cleaning device comprises lever, two oscillators, the Balance Control unit that is connected with said oscillator; Said Balance Control unit contacts with cleaning liquid layer on the silicon chip, and said two oscillators are separately fixed on the said lever, and the equalising torque system is formed in said lever, oscillator and Balance Control unit.
Preferably, in the cleaning device of said semi-conductor silicon chip, said two oscillators lay respectively at the both sides of the fulcrum of said lever.
Preferably, in the cleaning device of said semi-conductor silicon chip, said lever is movably connected on the mechanical arm through the fulcrum of said lever.
Preferably, in the cleaning device of said semi-conductor silicon chip, said oscillator is connected with signal generator.
Preferably, in the cleaning device of said semi-conductor silicon chip, the power output of said signal generator is the 157-3532 watt.
Preferably, in the cleaning device of said semi-conductor silicon chip, the frequency of said signal generator is the 200-3000 KHz.
Preferably, in the cleaning device of said semi-conductor silicon chip, said Balance Control unit is a buoyancy elements.
Preferably, in the cleaning device of said semi-conductor silicon chip, said oscillator is ultrasonic oscillator or mega sonic wave oscillator.
Preferably, the cleaning device of said semi-conductor silicon chip also comprises the rotating basis and the fixing silicon chip support of silicon chip, and said silicon chip support is fixed on the said rotating basis.
The present invention also provides a kind of cleaning method of semi-conductor silicon chip, and this cleaning method comprises: use cleaning fluid cleaning silicon chip surface, form at said silicon chip surface and clean liquid layer; The position of adjustment (adjusting) lever makes the Balance Control unit that oscillator connected that is fixed on the said lever contact with said cleaning liquid layer; Open said oscillator and make said oscillator operate as normal; Said lever reaches equalising torque according to buoyancy adjustment to the lever system of the said cleaning fluid that the Balance Control unit receives.
Preferably, in the cleaning method of said semi-conductor silicon chip, the position that the mechanical arm that utilization is connected with said lever reduces said lever makes said Balance Control unit contact with said cleaning liquid layer.
Preferably, in the cleaning method of said semi-conductor silicon chip, said oscillator is connected with signal generator, and the power output of said signal generator is the 157-3532 watt, and the frequency of said signal generator is the 200-3000 KHz.
Compared with prior art; The cleaning device of semi-conductor silicon chip provided by the invention; Utilize in the process on ultrasonic wave that oscillator sends or mega sonic wave cleaning silicon chip surface, utilize whether keeping parallelism of Balance Control unit judges silicon chip surface and oscillator, and can be through the height of the lever adjusting oscillator that is provided with; Make silicon chip surface keep being parallel to each other with oscillator all the time; Thereby the acoustic wave energy density that has guaranteed each position of silicon chip surface is identical, and the cleaning dynamics that each position of silicon chip surface is reached is identical, has improved cleaning performance.
The cleaning method of semi-conductor silicon chip provided by the invention; The Balance Control unit is contacted with the cleaning liquid layer; Judge whether keeping parallelism of silicon chip surface and oscillator according to the buoyancy that receives; And the lever that is connected with oscillator can regulate the height of oscillator so that lever system reaches equalising torque, i.e. silicon chip surface and oscillator keeping parallelism have guaranteed the cleaning uniformity of silicon chip surface.
Description of drawings
The structural profile sketch map of the cleaning device of the semi-conductor silicon chip for preferred embodiment of the present invention shown in Figure 1;
The flow chart of steps of the cleaning method of the semi-conductor silicon chip for preferred embodiment of the present invention shown in Figure 2.
The specific embodiment
Below in conjunction with accompanying drawing and specific embodiment the cleaning device and the cleaning method of the semi-conductor silicon chip of the present invention's proposition are done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only is used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is; The cleaning device of semi-conductor silicon chip provided by the invention; Utilize in the process on ultrasonic wave that oscillator sends or mega sonic wave cleaning silicon chip surface, utilize whether keeping parallelism of Balance Control unit judges silicon chip surface and oscillator, and can be through the height of the lever adjusting oscillator that is provided with; Make silicon chip surface keep being parallel to each other with oscillator all the time; Thereby the acoustic wave energy density that has guaranteed each position of silicon chip surface is identical, and the cleaning dynamics that each position of silicon chip surface is reached is identical, has improved cleaning performance.The cleaning method of semi-conductor silicon chip provided by the invention; The Balance Control unit is contacted with the cleaning liquid layer; Judge whether keeping parallelism of silicon chip surface and oscillator according to the buoyancy that receives; And the lever that is connected with oscillator can regulate the height of oscillator so that lever system reaches equalising torque, i.e. silicon chip surface and oscillator keeping parallelism have guaranteed the cleaning uniformity of silicon chip surface.
Please refer to Fig. 1, the structural profile sketch map of the cleaning device of the semi-conductor silicon chip for preferred embodiment of the present invention shown in Figure 1.The present invention provides a kind of cleaning device of semi-conductor silicon chip; This cleaning device comprises lever 11, two oscillators 12, the Balance Control unit 13 that is connected with said oscillator 12; Said Balance Control unit 13 contacts with cleaning liquid layer 15 on the silicon chip 14; Said two oscillators 12 are separately fixed on the said lever 11, and the equalising torque systems are formed in said lever 11, oscillator 12 and Balance Control unit 13.
Particularly, the cleaning device of semi-conductor silicon chip also comprises the rotating basis 17 and the fixing silicon chip support 18 of silicon chip 14, and said silicon chip support 18 is fixed on the said rotating basis 17, in the present embodiment, utilizes 17 pairs of silicon chips 14 of rotating basis to be rotated cleaning.
Further, said oscillator 12 is connected with signal generator (not drawing among the figure), and the power output of signal generator is the 157-3532 watt, and its frequency is the 200-3000 KHz.
In the present embodiment, said Balance Control unit 13 is a buoyancy elements, and the cleaning liquid layers 15 through buoyancy elements and silicon chip 14 surfaces contacts judges whether keeping parallelism of the surperficial and oscillator of silicon chip 14 12.Said oscillator 12 is ultrasonic oscillator or mega sonic wave oscillator, and in the present embodiment, said oscillator 12 is a ultrasonic oscillator.
In the present embodiment, said two oscillators 12 lay respectively at the both sides of the fulcrum of said lever 11, and said lever 11 is movably connected on the mechanical arm 16 through the fulcrum of said lever.In order clearly to set forth the embodiment of the invention; Fulcrum oscillator 12a on one side connects Balance Control unit 13a; The oscillator 12b of fulcrum another side connects Balance Control unit 13b; And oscillator 12a, 12b are shape and structure and all identical device of function, and Balance Control unit 13a, 13b also are shape and structure and function components identical.
The flow chart of steps of the cleaning method of the semi-conductor silicon chip for preferred embodiment of the present invention shown in Figure 2.With reference to Fig. 2, the cleaning method of the semi-conductor silicon chip that the embodiment of the invention provides comprises:
S21, use cleaning fluid cleaning silicon chip surface form the cleaning liquid layer at said silicon chip surface;
The position of S22, adjustment (adjusting) lever makes the Balance Control unit that oscillator connected that is fixed on the said lever contact with said cleaning liquid layer;
S23, the said oscillator of unlatching make said oscillator operate as normal;
S24, said lever reach equalising torque according to buoyancy adjustment to the lever system of the said cleaning fluid that the Balance Control unit receives.
Silicon chip 14 surface by utilizing cleaning fluids are rotated formula and clean, and form on the surface of said silicon chip 14 and clean liquid layer 15.Before the height that carries out adjustment (adjusting) lever 11; Confirm at first whether whole lever system reaches equalising torque, confirm equalising torque after, utilize the position of mechanical arm 16 adjustment (adjusting) levers 11 that are connected with lever 11; The both sides of lever 11 are fixed with oscillator 12a, 12b; Balance Control unit 13a, 13b that oscillator 12a, 12b are connected respectively contact with cleaning liquid layer 15, and unlatching oscillator 12a, 12b make its operate as normal, and Balance Control unit 13a, 13b receive cleaning liquid layer 15 respectively and affact the buoyancy on it; If silicon chip 14 surfaces and oscillator 12a, 12b be keeping parallelism not; Then Balance Control unit 13a, 13b are different with the cleaning liquid layer 15 contact depths, and promptly the buoyancy that receives of Balance Control unit 13a, 13b varies in size, and keeps the equalising torque of lever system according to the stressing conditions adjustment (adjusting) lever 11 of Balance Control unit 13a, 13b.For example the 13a buoyancy that receives in Balance Control unit is bigger than the buoyancy that Balance Control unit 13b receives; Then the degree of depth of the cleaning liquid layer 15 of the depth ratio Balance Control unit 13b immersion of the cleaning liquid layer 15 of Balance Control unit 13a immersion is bigger; Be that silicon chip 14 surfaces tilt near Balance Control unit 13a; Therefore, need regulate making Balance Control unit 13a, finally make oscillator 12a, 12b and silicon chip 14 surperficial keeping parallelisms through lever 11 along moving away from the direction on silicon chip 14 surfaces; Simultaneously, lever system reaches equalising torque.Adjustment through above-mentioned lever 11 can make ultrasonic oscillator send ultrasonic energy in the evenly distribution of silicon chip 14 surfaces, has finally improved cleaning performance.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when doing various changes and retouching.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (13)
1. the cleaning device of a semi-conductor silicon chip; It is characterized in that; Comprise lever, two oscillators, the Balance Control unit that is connected with said oscillator; Said Balance Control unit contacts with cleaning liquid layer on the silicon chip, and said two oscillators are separately fixed on the said lever, and the equalising torque system is formed in said lever, oscillator and Balance Control unit.
2. the cleaning device of semi-conductor silicon chip according to claim 1 is characterized in that, said two oscillators lay respectively at the both sides of the fulcrum of said lever.
3. the cleaning device of semi-conductor silicon chip according to claim 1 is characterized in that, said lever is movably connected on the mechanical arm through the fulcrum of said lever.
4. the cleaning device of semi-conductor silicon chip according to claim 1 is characterized in that, said oscillator is connected with signal generator.
5. the cleaning device of semi-conductor silicon chip according to claim 4 is characterized in that, the power output of said signal generator is the 157-3532 watt.
6. the cleaning device of semi-conductor silicon chip according to claim 4 is characterized in that, the frequency of said signal generator is the 200-3000 KHz.
7. according to the process cavity of removing photoresist of each described semi-conductor silicon chip in the claim 1 to 6, it is characterized in that said Balance Control unit is a buoyancy elements.
8. according to the cleaning device of each described semi-conductor silicon chip in the claim 1 to 6, it is characterized in that said oscillator is ultrasonic oscillator or mega sonic wave oscillator.
9. the cleaning device of semi-conductor silicon chip according to claim 1 is characterized in that, also comprises the rotating basis and the fixing silicon chip support of silicon chip, and said silicon chip support is fixed on the said rotating basis.
10. a cleaning method that utilizes the cleaning device of the described semi-conductor silicon chip of claim 1 is characterized in that, comprising:
Use cleaning fluid cleaning silicon chip surface, form at said silicon chip surface and clean liquid layer;
The position of adjustment (adjusting) lever makes the Balance Control unit that oscillator connected that is fixed on the said lever contact with said cleaning liquid layer;
Open said oscillator and make said oscillator operate as normal;
Said lever reaches equalising torque according to buoyancy adjustment to the lever system of the said cleaning fluid that the Balance Control unit receives.
11. cleaning method according to claim 10 is characterized in that, said silicon chip is fixed on the silicon chip support, and said silicon chip support is placed on the rotating basis, utilizes rotating basis that said silicon chip surface is rotated cleaning.
12. cleaning method according to claim 10 is characterized in that, the position that the mechanical arm that utilization is connected with said lever reduces said lever makes said Balance Control unit contact with said cleaning liquid layer.
13. cleaning method according to claim 10 is characterized in that, said oscillator is connected with signal generator, and the power output of said signal generator is the 157-3532 watt, and the frequency of said signal generator is the 200-3000 KHz.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110458408.XA CN102513305B (en) | 2011-12-30 | 2011-12-30 | The cleaning device of semi-conductor silicon chip and cleaning method thereof |
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| CN201110458408.XA CN102513305B (en) | 2011-12-30 | 2011-12-30 | The cleaning device of semi-conductor silicon chip and cleaning method thereof |
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| CN102513305A true CN102513305A (en) | 2012-06-27 |
| CN102513305B CN102513305B (en) | 2016-03-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106881291A (en) * | 2017-03-28 | 2017-06-23 | 南京联信自动化科技有限公司 | The liquid crystal panel cleaning device of sand disc |
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| JPH06333906A (en) * | 1993-05-24 | 1994-12-02 | Toshiba Ceramics Co Ltd | Ultrasonic cleaning device |
| JPH0947733A (en) * | 1995-08-03 | 1997-02-18 | Kokusai Denki L Tec:Kk | Ultrasonic washer |
| US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
| KR20070083678A (en) * | 2004-10-12 | 2007-08-24 | 가부시키가이샤 히다찌 플랜트 테크놀로지 | Ultrasonic cleaner |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4643774A (en) * | 1984-04-19 | 1987-02-17 | Sharp Corporation | Method of washing and drying substrates |
| EP0589237A2 (en) * | 1992-08-27 | 1994-03-30 | Applied Materials, Inc. | Vacuum etch chamber and method for treating parts thereof |
| JPH06244164A (en) * | 1993-02-22 | 1994-09-02 | Hitachi Ltd | Ultrasonic cleaning device |
| JPH06333906A (en) * | 1993-05-24 | 1994-12-02 | Toshiba Ceramics Co Ltd | Ultrasonic cleaning device |
| US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
| JPH0947733A (en) * | 1995-08-03 | 1997-02-18 | Kokusai Denki L Tec:Kk | Ultrasonic washer |
| KR20070083678A (en) * | 2004-10-12 | 2007-08-24 | 가부시키가이샤 히다찌 플랜트 테크놀로지 | Ultrasonic cleaner |
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| CN106881291A (en) * | 2017-03-28 | 2017-06-23 | 南京联信自动化科技有限公司 | The liquid crystal panel cleaning device of sand disc |
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| CN102513305B (en) | 2016-03-02 |
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