CN102496651B - Method of producing solar batteries with high efficiency and low cost by using diamond linear cutting method - Google Patents
Method of producing solar batteries with high efficiency and low cost by using diamond linear cutting method Download PDFInfo
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- CN102496651B CN102496651B CN201110394873.1A CN201110394873A CN102496651B CN 102496651 B CN102496651 B CN 102496651B CN 201110394873 A CN201110394873 A CN 201110394873A CN 102496651 B CN102496651 B CN 102496651B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method of producing solar batteries with high efficiency and low cost by using a diamond linear cutting method, which is characterized by including steps that a load-bearing box with special marks must be used in a production process, and a silicon chip and the load-bearing box are maintained at specific positions in the production process, so that solar battery sheets with high quality, high efficiency and low cost can be produced. During flocking, chemicals adding ranges are that sodium hydroxide ranges from 1.5% to 1.8%, isopropyl alcohol isopropyl alcohol ranges from 3% to 4%, additive ranges from 0.15% to 0.35%, reacting time ranges from 10 minutes to 20 minutes, reacting temperature ranges from 80 DEG C to 82 DEG C, and the thickness reduction range of the silicon chip is controlled to range from 0.3 to 0.5. By adopting the method of producing the solar batteries, yield and efficiency of the silicon chip obtained by using the traditional cutting method can be reached after adopting the diamond linear cutting method.
Description
Technical field
The present invention relates to a kind of production method of diamond wire saw high efficiency, low cost solar cell, for making single crystal silicon solar cell, belong to manufacture of solar cells technical field.
Background technology
Crystal silicon solar batteries sheet is the most important element that forms photovoltaic generating system, and photovoltaic generation principle is to utilize solar cell directly to convert solar energy to electric energy.And along with improving constantly of solar energy level silicon piece performance and updating of production equipment, making to obtain high-efficiency battery under common process becomes possibility.Domestic a lot of outstanding solar energy enterprise, is also all trying to explore related process, and is obtaining no small achievement, and the conversion efficiency of solar cell is greatly improved.And conversion efficiency of solar cell constantly study intensively and apply raising, also will make solar energy industry be able to better development, and make solar energy can more effectively open up as new forms of energy the field of using widely.Whole photovoltaic industry is under national policy is supported, development space or huge, has vast potential for future development.
The technological process that current conventional single crystal silicon solar cell is produced is:
Step 1, use reach the silicon material of solar level purity and prepare crystal bar by Czochralski method, then crystal bar cutting is become to certain thickness silicon chip, silicon chip surface is carried out to prerinse, and making herbs into wool is subsequently removed damage layer and is formed antireflecting suede structure, and chemical cleaning is also dry.
Step 2, the method spreading by liquid source form the PN junction of Uniform Doped at silicon chip surface each point.
The periphery P N knot and the surperficial phosphorosilicate glass that in step 3, removal diffusion process, form.
Step 4, surface deposition passivation and antireflective coating.
Backplate, back surface field and the front electrode of step 5, making solar cell.
Step 6, sintering form ohmic contact, thereby complete the manufacturing process of whole cell piece.
Wherein crystal bar cutting is become present general abrasive particle (mortar) the scroll saw patterning method that moves about that adopts of method of certain thickness silicon chip, adopt the method to make the reprocessing of cutting liquid become difficult, treatment cost of waste liquor is high, environmental protection pressure is large, production efficiency is not high, to the market competitiveness of solar cell, is an obstruction.Therefore some company starts to adopt cutting method more efficiently to solve the problems referred to above both at home and abroad, wherein adopt fixed diamond abrasive material wire cutting method to come the technology of cutting silicon rod ripe, the method has significantly reduced the waste of material, more energy-conservation and more environmental protection is more economical, cutting speed can improve more than 3 times simultaneously.
But diamond wire saw method has certain shortcoming, silicon chip surface stria by diamond wire saw is more obvious, technique as existing in direct use is carried out production meeting the manufacture of follow-up battery is produced to more adverse effect, poor to the outward appearance of battery and efficiency, fragment rate is higher simultaneously, and the advantage of diamond wire saw can not well be embodied at Follow-up Industry.How to overcome the above-mentioned series of problems that diamond wire saw causes, and with the silicon chip that this silicon chip obtains than abrasive particle (mortar) the scroll saw patterning method that moves about by tradition, to produce the cell piece with better conversion efficiency and yields be a difficult problem urgently to be resolved hurrily.
Summary of the invention
The monocrystaline silicon solar cell sheet production technology that the object of this invention is to provide a kind of applicable diamond wire saw method silicon chip, by this technique, can reach the yields with the cell piece of traditional cutting method silicon chip made, and have higher photoelectric conversion efficiency.
In order to achieve the above object, technical scheme of the present invention has been to provide a kind of production method of diamond wire saw high efficiency, low cost solar cell, it is characterized in that, step is:
Step 1, carry out inserted sheet: during inserted sheet, first observe the stria position of silicon chip, then according to stria, be vertically to the gaily decorated basket and carry out machine inserted sheet or manual inserted sheet;
Step 2, making herbs into wool: during making herbs into wool, the NaOH that the quality per distribution ratio of corrosive liquid is 1.5-1.8%, the isopropyl alcohol of 3-4%, the making herbs into wool additive of 0.15-0.35% and the deionized water of surplus, reaction time is 10-20 minute, reaction temperature is 80-82 degree Celsius, the attenuate amount of controlling silicon chip is 0.3-0.5 gram, than traditional handicraft, deducts weight 0.1-0.2g more.
When step 3, diffusion, keep the position of silicon chip in quartz boat identical with the position in the gaily decorated basket, diffusion must keep the consistency of silicon chip and the locality on quartz boat while finishing latter lower, special token is put on one side at Carrier box, can do not come with other border areas in this limit, when silicon chip is put into Carrier box, make the upper part of the silicon chip on quartz boat on Carrier box, have place, one side direction of special token, can not be chaotic;
When step 4, dry etching, make the position of silicon chip on support keep fixing, while silicon chip being reentered in Carrier box after having carved, make the direction of silicon chip and spread after direction while putting into Carrier box identical;
When step 5, secondary cleaning, the direction of silicon chip in the gaily decorated basket is: the part of silicon chip special token on Carrier box straight up;
If step 6 is used the lower sheet of flat plasma reinforced chemical vapour deposition method (below by plasma reinforced chemical vapour deposition method referred to as PECVD), the edge that Carrier box must make special token place when placing during with the gaily decorated basket upper slice the traffic direction of silicon chip vertical; If use sheet under tubular type PECVD, in the time of upper slice, must keep silicon chip in graphite boat and the gaily decorated basket, to keep identical vertical direction, in the time of lower, make the top edge of silicon chip vertical in graphite boat near Carrier box, have one side of special marking;
Step 7, when the silicon chip after PECVD is put into printing machine feeding platform together with Carrier box, keep Carrier box to have one side of special marking vertical with print stream waterline, printing obtains the solar battery sheet of high efficiency, low cost by oversintering.
The present invention mainly adjusts chemicals addition and the reaction condition of the making herbs into wool of silicon chip, reach surfacingization and the matte that obtains antiradar reflectivity, simultaneously in order to reduce fragment rate and printing fraction defective, need to carry out strict control to producing the stria orientation of silicon chip in each operation, make the stria of all silicon chips in an orientation as far as possible, the Carrier box of using in production process is carried out to certain mark, and the placement location of Carrier box in printing machine is the orientation of a regulation before printing simultaneously.
By method provided by the invention, can adopt after diamond wire saw method, reach yields and the efficiency of traditional cutting method silicon chip.
Embodiment
For the present invention is become apparent, hereby with preferred embodiment, be described in detail below.
Embodiment 1
The production method that the invention provides a kind of diamond wire saw high efficiency, low cost solar cell, the steps include:
Step 1, carry out inserted sheet: during inserted sheet, first observe the stria position of silicon chip, then according to stria, be vertically to the gaily decorated basket and carry out machine inserted sheet or manual inserted sheet;
Step 2, making herbs into wool: during making herbs into wool, the NaOH that the quality per distribution ratio of corrosive liquid is 1.7%, 3% isopropyl alcohol, 0.15% making herbs into wool additive and the deionized water of surplus, reaction time is 15 minutes, and reaction temperature is 80 degrees Celsius, and the attenuate amount of controlling silicon chip is 0.4 gram;
When step 3, diffusion, keep the position of silicon chip in quartz boat identical with the position in the gaily decorated basket, the control range of sheet resistance can be controlled respectively according to each different process program.Diffusion must keep the consistency of silicon chip and the locality on quartz boat while finishing latter lower, special token is put on one side at Carrier box, can do not come with other border areas in this limit, when silicon chip is put into Carrier box, make the upper part of the silicon chip on quartz boat on Carrier box, have place, one side direction of special token, can not be chaotic;
When step 4, dry etching, make the position of silicon chip on support keep fixing, while silicon chip being reentered in Carrier box after having carved, make the direction of silicon chip and spread after direction while putting into Carrier box identical, meanwhile, by universal meter, measure edge resistance within the limits prescribed.
When step 5, secondary cleaning, the direction of silicon chip in the gaily decorated basket is: the part of silicon chip special token on Carrier box straight up;
If step 6 is used sheet under flat-plate type PECVD, the edge that Carrier box must make special token place when placing during with the gaily decorated basket upper slice the traffic direction of silicon chip vertical; If use sheet under tubular type PECVD, in the time of upper slice, must keep silicon chip in graphite boat and the gaily decorated basket, to keep identical vertical direction, in the time of lower, make the top edge of silicon chip vertical in graphite boat near Carrier box, have one side of special marking;
Step 7, when the silicon chip after PECVD is put into printing machine feeding platform together with Carrier box, keep Carrier box to have one side of special marking vertical with print stream waterline, printing obtains the solar battery sheet of low-cost and high-performance by oversintering.
Through test, show, the cell piece of the silicon chip that the electrical property of this cell piece and employing conventional method are cut is basic identical, and cost is lower simultaneously.
Embodiment 2
The difference of the present embodiment and embodiment 1 is, in step 2, during making herbs into wool, the NaOH that the quality per distribution ratio of corrosive liquid is 1.5%, 3% isopropyl alcohol, 0.15% making herbs into wool additive and the deionized water of surplus, reaction time is 20 minutes, reaction temperature is 80 degrees Celsius, and the attenuate amount of controlling silicon chip is 0.5 gram.Other steps are with embodiment 1.
Embodiment 3
The difference of the present embodiment and embodiment 1 is, in step 2, the NaOH that the quality per distribution ratio of corrosive liquid is 1.8%, 4% isopropyl alcohol, 0.35% making herbs into wool additive and the deionized water of surplus, reaction time is 10 minutes, reaction temperature is 81 degrees Celsius, and the attenuate amount of controlling silicon chip is 0.3 gram.Other steps are with embodiment 1.
Claims (1)
1. a production method for diamond wire saw high efficiency, low cost solar cell, is characterized in that, step is:
Step 1, carry out inserted sheet: during inserted sheet, first observe the stria position of silicon chip, then according to stria, be vertically to the gaily decorated basket and carry out machine inserted sheet or manual inserted sheet;
Step 2, making herbs into wool: during making herbs into wool, the NaOH that the quality per distribution ratio of corrosive liquid is 1.5-1.8%, the isopropyl alcohol of 3-4%, the making herbs into wool additive of 0.15-0.35% and the deionized water of surplus, reaction time is 10-20 minute, reaction temperature is 80-82 degree Celsius, and the attenuate amount of controlling silicon chip is 0.3-0.5 gram;
When step 3, diffusion, keep the position of silicon chip in quartz boat identical with the position in the gaily decorated basket, diffusion must keep the consistency of silicon chip and the locality on quartz boat while finishing latter lower, special token is put on one side at Carrier box, can do not come with other border areas in this limit, when silicon chip is put into Carrier box, make the upper part of the silicon chip on quartz boat on Carrier box, have place, one side direction of special token, can not be chaotic;
When step 4, dry etching, make the position of silicon chip on support keep fixing, while silicon chip being reentered in Carrier box after having carved, make the direction of silicon chip and spread after direction while putting into Carrier box identical;
When step 5, secondary cleaning, the direction of silicon chip in the gaily decorated basket is: the part of silicon chip special token on Carrier box straight up;
If step 6 is used sheet under flat plasma reinforced chemical vapour deposition method, the edge that Carrier box must make special token place when placing during with the gaily decorated basket upper slice the traffic direction of silicon chip vertical; If use sheet under tubular type plasma reinforced chemical vapour deposition method, in the time of upper slice, must keep silicon chip in graphite boat and the gaily decorated basket, to keep identical vertical direction, in the time of lower, make the top edge of silicon chip vertical in graphite boat near Carrier box, have one side of special marking;
Step 7, when the silicon chip after PECVD is put into printing machine feeding platform together with Carrier box, keep Carrier box to have one side of special marking vertical with print stream waterline, printing obtains the solar battery sheet of low-cost and high-performance by oversintering.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110394873.1A CN102496651B (en) | 2011-12-02 | 2011-12-02 | Method of producing solar batteries with high efficiency and low cost by using diamond linear cutting method |
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| CN201110394873.1A CN102496651B (en) | 2011-12-02 | 2011-12-02 | Method of producing solar batteries with high efficiency and low cost by using diamond linear cutting method |
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| CN102496651A CN102496651A (en) | 2012-06-13 |
| CN102496651B true CN102496651B (en) | 2014-02-26 |
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| CN107195705A (en) * | 2017-06-16 | 2017-09-22 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of solar cell |
| CN112635590B (en) * | 2020-12-18 | 2023-04-18 | 晶澳太阳能有限公司 | Preparation method of high-efficiency monocrystalline silicon SE-PERC battery piece |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5899704A (en) * | 1995-03-10 | 1999-05-04 | Siemens Aolar Gmbh | Solar cell with a back-surface field method of production |
| CN101840961A (en) * | 2010-03-31 | 2010-09-22 | 晶澳(扬州)太阳能光伏工程有限公司 | Industrialized production process of crystalline silicon solar battery |
| CN101937945A (en) * | 2010-09-09 | 2011-01-05 | 浙江百力达太阳能有限公司 | Preparation method of solar cell |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5899704A (en) * | 1995-03-10 | 1999-05-04 | Siemens Aolar Gmbh | Solar cell with a back-surface field method of production |
| CN101840961A (en) * | 2010-03-31 | 2010-09-22 | 晶澳(扬州)太阳能光伏工程有限公司 | Industrialized production process of crystalline silicon solar battery |
| CN101937945A (en) * | 2010-09-09 | 2011-01-05 | 浙江百力达太阳能有限公司 | Preparation method of solar cell |
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