CN102496651A - Method of producing solar batteries with high efficiency and low cost by using diamond linear cutting method - Google Patents
Method of producing solar batteries with high efficiency and low cost by using diamond linear cutting method Download PDFInfo
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- CN102496651A CN102496651A CN2011103948731A CN201110394873A CN102496651A CN 102496651 A CN102496651 A CN 102496651A CN 2011103948731 A CN2011103948731 A CN 2011103948731A CN 201110394873 A CN201110394873 A CN 201110394873A CN 102496651 A CN102496651 A CN 102496651A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method of producing solar batteries with high efficiency and low cost by using a diamond linear cutting method, which is characterized by including steps that a load-bearing box with special marks must be used in a production process, and a silicon chip and the load-bearing box are maintained at specific positions in the production process, so that solar battery sheets with high quality, high efficiency and low cost can be produced. During flocking, chemicals adding ranges are that sodium hydroxide ranges from 1.5% to 1.8%, isopropyl alcohol isopropyl alcohol ranges from 3% to 4%, additive ranges from 0.15% to 0.35%, reacting time ranges from 10 minutes to 20 minutes, reacting temperature ranges from 80 DEG C to 82 DEG C, and the thickness reduction range of the silicon chip is controlled to range from 0.3 to 0.5. By adopting the method of producing the solar batteries, yield and efficiency of the silicon chip obtained by using the traditional cutting method can be reached after adopting the diamond linear cutting method.
Description
Technical field
The present invention relates to a kind of production method of diamond wire cutting high efficiency, low cost solar cell, be used to make single crystal silicon solar cell, belong to the manufacture of solar cells technical field.
Background technology
The crystal silicon solar batteries sheet is a most important element of forming photovoltaic generating system, and the photovoltaic generation principle is to utilize solar cell directly solar energy converting to be become electric energy.And along with improving constantly of solar energy level silicon piece performance and updating of production equipment, make under the common process to obtain high-efficiency battery and become possibility.Domestic a lot of outstanding solar energy enterprise is also all trying to explore related process, and is obtaining no small achievement, and the conversion efficiency of solar cell is greatly improved.And conversion efficiency of solar cell constantly study intensively and use raising, also will make solar energy industry be able to better development, and make solar energy can more effectively open up the field of using widely as new forms of energy.Whole photovoltaic industry is under the national policy support, and development space still is huge, has vast potential for future development.
The technological process of present conventional single crystal silicon solar cell production is:
The silicon material that step 1, usefulness reach solar level purity prepares crystal bar through Czochralski method; Make it become certain thickness silicon chip to crystal bar cutting then; Silicon chip surface is carried out prerinse, and making herbs into wool is subsequently removed affected layer and is formed antireflecting suede structure, and chemical cleaning is also dry.
Step 2, the method that spreads through liquid source form even doped P N knot at the silicon chip surface each point.
The periphery P N knot and the surperficial phosphorosilicate glass that form in step 3, the removal diffusion process.
Step 4, surface deposition passivation and antireflective coating.
Backplate, back surface field and the front electrode of step 5, making solar cell.
Step 6, sintering form ohmic contact, thereby accomplish the manufacturing process of entire cell sheet.
Wherein crystal bar cutting is made general now abrasive particle (mortar) the scroll saw patterning method that moves about that adopts of its method that becomes certain thickness silicon chip; Adopt this method to make reprocessing become difficult to cutting liquid; Treatment cost of waste liquor is high; Environmental protection pressure is big, and production efficiency is not high, is an obstruction to the market competitiveness of solar cell.Therefore domestic and international some company begins to adopt more efficiently, and cutting method solves the problems referred to above; The technology that wherein adopts fixed diamond abrasive material wire cutting method to cut silicon rod is ripe; This method has significantly reduced the waste of material; More energy-conservation and more environmental protection is more economical, cutting speed can improve more than 3 times simultaneously.
But the diamond wire patterning method has certain shortcoming; Silicon chip surface stria through the diamond wire cutting is more obvious; Produce and to produce more adverse effect to the manufacturing of follow-up battery like the existing technology of direct usefulness; Outward appearance and efficient to battery are relatively poor, and fragment rate is higher simultaneously, and the advantage of diamond wire cutting can not well be embodied in follow-up industry.How to overcome the above-mentioned serial problem that diamond wire cutting causes, and compare with this silicon chip and to move about with tradition that to produce the battery sheet with better conversion efficiency and yields be a difficult problem that needs to be resolved hurrily for silicon chip that abrasive particle (mortar) scroll saw patterning method obtains.
Summary of the invention
The monocrystaline silicon solar cell sheet production technology that the purpose of this invention is to provide a kind of suitable diamond wire patterning method silicon chip; Can reach yields through this technology, and have higher photoelectric conversion efficiency with the battery sheet of traditional cutting method silicon chip made.
In order to achieve the above object, technical scheme of the present invention has provided a kind of production method of diamond wire cutting high efficiency, low cost solar cell, it is characterized in that step is:
Step 1, carry out inserted sheet: during inserted sheet, at first observe the stria position of silicon chip, be vertically to the gaily decorated basket according to stria then and carry out machine inserted sheet or manual inserted sheet;
Step 2, making herbs into wool: during making herbs into wool; The quality per distribution ratio of corrosive liquid is the NaOH of 1.5-1.8%, the isopropyl alcohol of 3-4%, making herbs into wool additive and the balance of deionized water of 0.15-0.35%; Reaction time is 10-20 minute; Reaction temperature is 80-82 degree centigrade, and the attenuate amount of control silicon chip is the 0.3-0.5 gram, promptly deducts weight 0.1-0.2g than traditional handicraft more.
When step 3, diffusion; Keep the position of silicon chip in quartz boat identical with the position in the gaily decorated basket, diffusion finishes the consistency that the back must keep silicon chip and the locality on quartz boat down during sheet, one side at the special token of putting on of Carrier box; Make this limit not come with other border areas; When silicon chip is put into Carrier box, make the top of the silicon chip on the quartz boat on Carrier box, have one side of special token to belong to direction, can not be chaotic;
When step 4, dry etching, make the position of silicon chip on support keep fixing, when being reentered into silicon chip in the Carrier box after having carved, make silicon chip direction with spread after direction when putting into Carrier box identical;
When step 5, secondary cleaning, the direction of silicon chip in the gaily decorated basket is: the part of silicon chip special token on Carrier box straight up;
Step 6, if use flat plasma reinforced chemical vapour deposition method (following abbreviate the plasma reinforced chemical vapour deposition method as PECVD) sheet down, Carrier box must make the special token place when placing edge during with the gaily decorated basket last slice the traffic direction of silicon chip vertical; If use sheet under the tubular type PECVD, must keep silicon chip identical vertical direction of maintenance in graphite boat and the gaily decorated basket in the time of last slice, during following sheet, make the top edge of silicon chip vertical in the graphite boat that one side of special marking arranged near Carrier box;
Step 7, when the silicon chip behind the PECVD is put into the printing machine feeding platform together with Carrier box, keep Carrier box to have one side of special marking vertical, print after oversintering obtains the solar battery sheet of high efficiency, low cost with the print stream waterline.
The present invention mainly adjusts the chemicals addition and the reaction condition of the making herbs into wool of silicon chip; Reach surfacingization and the matte that obtains antiradar reflectivity; In order to reduce fragment rate and printing fraction defective, need carry out strict control to the stria orientation that produces silicon chip in each operation simultaneously, the stria that as far as possible makes all silicon chips is in an orientation; Simultaneously the Carrier box of using in the production process is carried out certain mark, and the placement location of Carrier box in printing machine is the orientation of a regulation before printing.
After can adopting the diamond wire patterning method through method provided by the invention, reach the yields and the efficient of traditional cutting method silicon chip.
Embodiment
For making the present invention more obviously understandable, elaborate as follows with preferred embodiment now.
Embodiment 1
The invention provides a kind of production method of diamond wire cutting high efficiency, low cost solar cell, the steps include:
Step 1, carry out inserted sheet: during inserted sheet, at first observe the stria position of silicon chip, be vertically to the gaily decorated basket according to stria then and carry out machine inserted sheet or manual inserted sheet;
Step 2, making herbs into wool: during making herbs into wool; The quality per distribution ratio of corrosive liquid is 1.7% NaOH, 3% isopropyl alcohol, 0.15% making herbs into wool additive and balance of deionized water; Reaction time is 15 minutes, and reaction temperature is 80 degrees centigrade, and the attenuate amount of control silicon chip is 0.4 gram;
When step 3, diffusion, keep the position of silicon chip in quartz boat identical with the position in the gaily decorated basket, the control range of side's resistance can be controlled respectively according to each different processes scheme.Diffusion finishes the consistency that the back must keep silicon chip and the locality on quartz boat down during sheet; Special token is put on one side at Carrier box; Make this limit not come with other border areas; When silicon chip is put into Carrier box, make the top of the silicon chip on the quartz boat on Carrier box, have one side of special token to belong to direction, can not be chaotic;
When step 4, dry etching; Make the position of silicon chip on support keep fixing, when being reentered into silicon chip in the Carrier box after having carved, make silicon chip direction with spread after direction when putting into Carrier box identical; Simultaneously, measure edge resistance in the scope of regulation through universal meter.
When step 5, secondary cleaning, the direction of silicon chip in the gaily decorated basket is: the part of silicon chip special token on Carrier box straight up;
Step 6, if use sheet under the flat-plate type PECVD, Carrier box must make the special token place when placing edge during with the gaily decorated basket last slice the traffic direction of silicon chip vertical; If use sheet under the tubular type PECVD, must keep silicon chip identical vertical direction of maintenance in graphite boat and the gaily decorated basket in the time of last slice, during following sheet, make the top edge of silicon chip vertical in the graphite boat that one side of special marking arranged near Carrier box;
Step 7, when the silicon chip behind the PECVD is put into the printing machine feeding platform together with Carrier box, keep Carrier box to have one side of special marking vertical, print after oversintering obtains the solar battery sheet of low-cost and high-performance with the print stream waterline.
Show that through test the electrical property of this battery sheet is basic identical with the battery sheet of the silicon chip that adopts conventional method to cut, cost is lower simultaneously.
Embodiment 2
The difference of present embodiment and embodiment 1 is; In step 2; During making herbs into wool, the quality per distribution ratio of corrosive liquid is 1.5% NaOH, 3% isopropyl alcohol, 0.15% making herbs into wool additive and balance of deionized water, and the reaction time is 20 minutes; Reaction temperature is 80 degrees centigrade, and the attenuate amount of control silicon chip is 0.5 gram.Other steps are with embodiment 1.
Embodiment 3
The difference of present embodiment and embodiment 1 is; In step 2; The quality per distribution ratio of corrosive liquid is 1.8% NaOH, 4% isopropyl alcohol, 0.35% making herbs into wool additive and balance of deionized water; Reaction time is 10 minutes, and reaction temperature is 81 degrees centigrade, and the attenuate amount of control silicon chip is 0.3 gram.Other steps are with embodiment 1.
Claims (1)
1. the production method of diamond wire cutting high efficiency, low cost solar cell is characterized in that step is:
Step 1, carry out inserted sheet: during inserted sheet, at first observe the stria position of silicon chip, be vertically to the gaily decorated basket according to stria then and carry out machine inserted sheet or manual inserted sheet;
Step 2, making herbs into wool: during making herbs into wool; The quality per distribution ratio of corrosive liquid is the NaOH of 1.5-1.8%, the isopropyl alcohol of 3-4%, making herbs into wool additive and the balance of deionized water of 0.15-0.35%; Reaction time is 10-20 minute; Reaction temperature is 80-82 degree centigrade, and the attenuate amount of control silicon chip is the 0.3-0.5 gram;
When step 3, diffusion; Keep the position of silicon chip in quartz boat identical with the position in the gaily decorated basket, diffusion finishes the consistency that the back must keep silicon chip and the locality on quartz boat down during sheet, one side at the special token of putting on of Carrier box; Make this limit not come with other border areas; When silicon chip is put into Carrier box, make the top of the silicon chip on the quartz boat on Carrier box, have one side of special token to belong to direction, can not be chaotic;
When step 4, dry etching, make the position of silicon chip on support keep fixing, when being reentered into silicon chip in the Carrier box after having carved, make silicon chip direction with spread after direction when putting into Carrier box identical;
When step 5, secondary cleaning, the direction of silicon chip in the gaily decorated basket is: the part of silicon chip special token on Carrier box straight up;
Step 6, if use sheet under the flat plasma reinforced chemical vapour deposition method, Carrier box must make the special token place when placing edge during with the gaily decorated basket last slice the traffic direction of silicon chip vertical; If use sheet under the tubular type plasma reinforced chemical vapour deposition method, must keep silicon chip identical vertical direction of maintenance in graphite boat and the gaily decorated basket in the time of last slice, during following sheet, make the top edge of silicon chip vertical in the graphite boat that one side of special marking arranged near Carrier box;
Step 7, when the silicon chip behind the PECVD is put into the printing machine feeding platform together with Carrier box, keep Carrier box to have one side of special marking vertical, print after oversintering obtains the solar battery sheet of low-cost and high-performance with the print stream waterline.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110394873.1A CN102496651B (en) | 2011-12-02 | 2011-12-02 | Method of producing solar batteries with high efficiency and low cost by using diamond linear cutting method |
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| CN201110394873.1A CN102496651B (en) | 2011-12-02 | 2011-12-02 | Method of producing solar batteries with high efficiency and low cost by using diamond linear cutting method |
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| CN102496651A true CN102496651A (en) | 2012-06-13 |
| CN102496651B CN102496651B (en) | 2014-02-26 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195705A (en) * | 2017-06-16 | 2017-09-22 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of solar cell |
| CN112635590A (en) * | 2020-12-18 | 2021-04-09 | 晶澳太阳能有限公司 | Preparation method of high-efficiency monocrystalline silicon SE-PERC battery piece |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5899704A (en) * | 1995-03-10 | 1999-05-04 | Siemens Aolar Gmbh | Solar cell with a back-surface field method of production |
| CN101840961A (en) * | 2010-03-31 | 2010-09-22 | 晶澳(扬州)太阳能光伏工程有限公司 | Industrialized production process of crystalline silicon solar battery |
| CN101937945A (en) * | 2010-09-09 | 2011-01-05 | 浙江百力达太阳能有限公司 | Preparation method of solar cell |
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2011
- 2011-12-02 CN CN201110394873.1A patent/CN102496651B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5899704A (en) * | 1995-03-10 | 1999-05-04 | Siemens Aolar Gmbh | Solar cell with a back-surface field method of production |
| CN101840961A (en) * | 2010-03-31 | 2010-09-22 | 晶澳(扬州)太阳能光伏工程有限公司 | Industrialized production process of crystalline silicon solar battery |
| CN101937945A (en) * | 2010-09-09 | 2011-01-05 | 浙江百力达太阳能有限公司 | Preparation method of solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195705A (en) * | 2017-06-16 | 2017-09-22 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of solar cell |
| CN112635590A (en) * | 2020-12-18 | 2021-04-09 | 晶澳太阳能有限公司 | Preparation method of high-efficiency monocrystalline silicon SE-PERC battery piece |
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| CN102496651B (en) | 2014-02-26 |
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