CN102479848A - Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof - Google Patents
Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof Download PDFInfo
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- CN102479848A CN102479848A CN2010105641225A CN201010564122A CN102479848A CN 102479848 A CN102479848 A CN 102479848A CN 2010105641225 A CN2010105641225 A CN 2010105641225A CN 201010564122 A CN201010564122 A CN 201010564122A CN 102479848 A CN102479848 A CN 102479848A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a solar battery structure for group II to V polycrystal semiconductors and a manufacture method thereof. The solar battery structure for the group II to V polycrystal semiconductors comprises a transparent base plate, an amorphous silicon layer and at least one group II to V polycrystal semiconductor layer, wherein the amorphous silicon layer is formed on the transparent base plate by using a plasma assisted chemical vapor deposition method, and the group II to V polycrystal semiconductor layer is sequentially formed on the amorphous silicon layer by a metal organic chemical vapor deposition method. Because the transparent base plate is adopted for replacing the traditional group II to V base plates, the solar battery structure and the manufacture method have the advantages that the cost can be greatly reduced, the area of the solar battery is increased, further, the light absorption area is increased, and the conversion efficiency is improved.
Description
Technical field
The present invention relates to a kind of technology of solar battery structure, semi-conductive solar battery structure of particularly a kind of three or five families and preparation method thereof.
Background technology
Because earth available resources are limited, for exempting from resource exhaustion, solar energy industry is arisen at the historic moment, and solar energy is a kind of continuous forever energy of environmental protection, thereby the exploitation solar cell can obtain the luminous energy storage to utilize.Solar cell is that electronics was excited and transition takes place after semiconductor absorbed light quantity or photon, thereby the electrons excited drive circuit forms the battery semiconductor.The various solar cell material that uses at present comprises the material of the element link of semiconductor species such as monocrystalline silicon, polysilicon, amorphous silicon or three or five families, two or six families.
Three or five family's solar cells are called the concentrating solar battery again, have the photoelectric conversion efficiency far above the silicon wafer solar cell, and the pliability of hull cell is also arranged simultaneously.Three or five family's solar cells are with on three or five family's substrates; Form gallium arsenide film with chemical vapour deposition technique; Made film solar battery structure is applied on the solar panel of artificial satellite very early, but has that absorption spectrum ranges is extremely wide, conversion efficiency can high exceed 30% and the life-span is long than other kind solar cell, the advantage of stable in properties.Although three or five family's solar cells need not used silicon wafer, chip cost is still high relatively, is the problem that need overcome at present.
Summary of the invention
The object of the present invention is to provide semi-conductive solar battery structure of a kind of three or five families and preparation method thereof, thereby overcome defective of the prior art.
The present invention realizes through following technical scheme:
The semi-conductive solar battery structure of a kind of three or five families comprises:
One transparency carrier;
One amorphous silicon layer is formed on this transparency carrier; And
At least one three or five family's polycrystal semiconductor layers are formed on this amorphous silicon layer.
Wherein, the material of this transparency carrier is glass, quartz, transparent plastic or signle crystal alumina.
This amorphous silicon layer is to utilize the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.
This three or five family polycrystal semiconductor layer is to utilize Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.
The material of this three or five family polycrystal semiconductor layer is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs.
When this three or five family polycrystal semiconductor layer is two-layer, comprise one first type semiconductor layer and one second type semiconductor layer.
When this three or five family polycrystal semiconductor layer is three layers, comprise one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.
Wherein, when this first type semiconductor layer was P type poly semiconductor, second type semiconductor layer was a N+ type poly semiconductor; Or first type semiconductor layer when being N+ type poly semiconductor, second type semiconductor layer is a P type poly semiconductor.
The present invention also provides a kind of manufacture method of solar battery structure, comprises the following steps:
On a transparency carrier, form an amorphous silicon layer; And
On this amorphous silicon layer, deposit one deck three or five family's polycrystal semiconductor layers at least in regular turn.
Wherein, the material of this transparency carrier is glass, quartz, transparent plastic or signle crystal alumina.
This amorphous silicon layer is to utilize the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.
This three or five family polycrystal semiconductor layer is to utilize Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.
The material of this three or five family polycrystal semiconductor layer is indium nitride, aluminium arsenide, aluminum gallium arsenide or GaAs.
When this three or five family polycrystal semiconductor layer is two-layer, comprise one first type semiconductor layer and one second type semiconductor layer.
When this three or five family polycrystal semiconductor layer is three layers, comprise one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.
When this first type semiconductor layer was P type poly semiconductor, second type semiconductor layer was a N+ type poly semiconductor; Or first type semiconductor layer when being N+ type poly semiconductor, second type semiconductor layer is a P type poly semiconductor.
The semi-conductive solar battery structure of three or five families of the present invention is to adopt transparency carrier to replace three or five family's substrates of the prior art, can significantly reduce cost.And use cheap transparency carrier, and can the area of solar cell be increased, and then increase the extinction area, promote conversion efficiency.
Description of drawings
Fig. 1 is the cutaway view of an embodiment of the semi-conductive solar battery structure of the present invention three or five families;
Fig. 2 is the cutaway view of another embodiment of the semi-conductive solar battery structure of the present invention three or five families;
Fig. 3 is for making the flow chart of the semi-conductive solar battery structure of three or five families among the present invention.
Description of reference numerals: 100,100 '-solar battery structure; The 10-transparency carrier; The 12-amorphous silicon layer; 14,14 '-3 5 family's semiconductor layer; 142-first type semiconductor layer; 144-second type semiconductor layer; 146-essence type semiconductor layer.
Embodiment
Below in conjunction with accompanying drawing, do more detailed explanation with other technical characterictic and advantage to the present invention is above-mentioned.
The present invention provides semi-conductive solar battery structure of a kind of three or five families and preparation method thereof, and this solar cell can be applicable to wall board for building, roof etc. and locates, and exposes to sunlight with absorption solar energy, and converts thereof into daily available electric energy.
Fig. 1 is the sketch map of solar battery structure 100 of the present invention; This solar cell comprises a transparency carrier 10, an amorphous silicon layer 12 and at least one three or five family's polycrystal semiconductor layers (Group III-V polycrystalsemiconductor) 14; Wherein the material of transparency carrier 10 is glass, quartz, transparent plastic or signle crystal alumina, and amorphous silicon layer 12 is formed on the transparency carrier 10; The material of three or five family's polycrystal semiconductor layers 14 is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs, and three or five family's polycrystal semiconductor layers 14 are formed on the amorphous silicon layer 12.
As shown in Figure 1; When three or five family's polycrystal semiconductor layers 14 comprise when two-layer; Then it comprises one first type semiconductor layer 142 and one second type semiconductor layer 144, and wherein when first type semiconductor layer 142 was P type poly semiconductor, second type semiconductor layer 144 was a N+ type poly semiconductor; When first type semiconductor layer 142 was N+ type poly semiconductor, second type semiconductor layer 144 was a P type poly semiconductor.With the InGaN is example, and when being P type polycrystalline InGaN semiconductor layer as if first type semiconductor layer 142, second type semiconductor layer 144 is a N+ type polycrystalline InGaN semiconductor layer.
Fig. 2 is another embodiment of solar battery structure 100 ' of the present invention; When three or five family's polycrystal semiconductor layers 14 ' comprise three layers; It comprises one first type semiconductor layer 142, one second type semiconductor layer 144 and an essential type semiconductor layer 146, wherein, and when first type semiconductor layer 142 is P type poly semiconductor; Second type semiconductor layer 144 is a N+ type poly semiconductor, and essential type semiconductor layer 146 is an I type poly semiconductor; When first type semiconductor layer 142 was N+ type poly semiconductor, second type semiconductor layer 144 was a P type poly semiconductor, and essential type semiconductor layer 146 is an I type poly semiconductor.With the InGaN is example, if first type semiconductor layer 142 is a P type polycrystalline InGaN semiconductor layer, then second type semiconductor layer 144 is a N+ type polycrystalline InGaN semiconductor layer, and essential type semiconductor layer 146 is an I type polycrystalline InGaN semiconductor layer.
Fig. 3 is the manufacture method of solar battery structure of the present invention, and (Plasma Enhanced Chemical Vapor Deposition PECVD) forms an amorphous silicon layer in step S10, on a transparency carrier, to utilize the plasma enhanced chemical vapor deposition method; Step S12 utilizes Metalorganic Chemical Vapor Deposition again on amorphous silicon layer (Metal-organic Chemical Vapor Deposition MOCVD) deposits one deck three or five family's polycrystal semiconductor layers at least in regular turn.Itself can't be formed at the semiconductor of three or five families on the transparency carrier, but because the key of the semiconductor of three or five families and amorphous silicon knot (bonding) is close, and lattice is close, constitutes the semi-conductive solar cell of three or five families so can see through amorphous silicon layer with transparency carrier.The step of deposition three or five family's polycrystal semiconductor layers is on amorphous silicon layer, to form first type semiconductor layer and second type semiconductor layer in regular turn among the step S12, or on amorphous silicon layer, forms first type semiconductor layer, essential type semiconductor layer and second type semiconductor layer in regular turn.
In sum; Semi-conductive solar battery structure of three or five families of the present invention and preparation method thereof is to adopt transparency carrier to replace three or five traditional family's substrates; Characteristic through the lattice of amorphous silicon layer own; The polycrystal semiconductor layer of three or five families can be deposited on the amorphous silicon layer, thereby accomplish solar battery structure.
The present invention need not adopt three or five expensive family's substrates, can significantly reduce cost, and because of the transparency carrier cost is low, can make large-area solar cell, and then increase the extinction area, promotes conversion efficiency.
The above is merely preferred embodiment of the present invention, only is illustrative for the purpose of the present invention, and nonrestrictive.Those skilled in the art is understood, and in spirit that claim of the present invention limited and scope, can carry out many changes to it, revise, in addition equivalent, but all will fall in protection scope of the present invention.
Claims (16)
1. semi-conductive solar battery structure of family comprises:
One transparency carrier;
One amorphous silicon layer is formed on this transparency carrier; And
At least one three or five family's polycrystal semiconductor layers are formed on this amorphous silicon layer.
2. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that the material of this transparency carrier is glass, quartz, transparent plastic or signle crystal alumina.
3. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that, this amorphous silicon layer is to utilize the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.
4. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that, this three or five family polycrystal semiconductor layer is to utilize Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.
5. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that the material of this three or five family polycrystal semiconductor layer is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs.
6. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that, when this three or five family polycrystal semiconductor layer is two-layer, comprises one first type semiconductor layer and one second type semiconductor layer.
7. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that, when this three or five family polycrystal semiconductor layer is three layers, comprises one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.
8. like claim 6 or 7 semi-conductive solar battery structures of described three or five families, it is characterized in that when this first type semiconductor layer was P type poly semiconductor, second type semiconductor layer was a N+ type poly semiconductor; Or first type semiconductor layer when being N+ type poly semiconductor, second type semiconductor layer is a P type poly semiconductor.
9. the manufacture method of a solar battery structure is characterized in that, comprises the following steps:
On a transparency carrier, form an amorphous silicon layer; And
On this amorphous silicon layer, deposit one deck three or five family's polycrystal semiconductor layers at least in regular turn.
10. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, the material of this transparency carrier is glass, quartz, transparent plastic or signle crystal alumina.
11. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, this amorphous silicon layer is to utilize the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.
12. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, this three or five family polycrystal semiconductor layer is to utilize Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.
13. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, the material of this three or five family polycrystal semiconductor layer is indium nitride, aluminium arsenide, aluminum gallium arsenide or GaAs.
14. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, when this three or five family polycrystal semiconductor layer is two-layer, comprises one first type semiconductor layer and one second type semiconductor layer.
15. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, when this three or five family polycrystal semiconductor layer is three layers, comprises one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.
16. the manufacture method like claim 14 or 15 described solar battery structures is characterized in that, when this first type semiconductor layer was P type poly semiconductor, second type semiconductor layer was a N+ type poly semiconductor; Or first type semiconductor layer when being N+ type poly semiconductor, second type semiconductor layer is a P type poly semiconductor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105641225A CN102479848A (en) | 2010-11-24 | 2010-11-24 | Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof |
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| CN2010105641225A CN102479848A (en) | 2010-11-24 | 2010-11-24 | Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof |
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| CN102479848A true CN102479848A (en) | 2012-05-30 |
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| CN2010105641225A Pending CN102479848A (en) | 2010-11-24 | 2010-11-24 | Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617167A (en) * | 2013-11-01 | 2015-05-13 | 国际商业机器公司 | Method for forming photovoltaic device, and photovoltaic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4496788A (en) * | 1982-12-29 | 1985-01-29 | Osaka Transformer Co., Ltd. | Photovoltaic device |
| US4657603A (en) * | 1984-10-10 | 1987-04-14 | Siemens Aktiengesellschaft | Method for the manufacture of gallium arsenide thin film solar cells |
| JPH0758360A (en) * | 1993-08-19 | 1995-03-03 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
| JPH07240531A (en) * | 1993-12-20 | 1995-09-12 | Kurisutaru Device:Kk | Solar cell, its manufacture, and forming method of multilayered thin film |
| US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| CN1534798A (en) * | 2003-03-26 | 2004-10-06 | 佳能株式会社 | Laminated photovoltage element |
-
2010
- 2010-11-24 CN CN2010105641225A patent/CN102479848A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4496788A (en) * | 1982-12-29 | 1985-01-29 | Osaka Transformer Co., Ltd. | Photovoltaic device |
| US4657603A (en) * | 1984-10-10 | 1987-04-14 | Siemens Aktiengesellschaft | Method for the manufacture of gallium arsenide thin film solar cells |
| JPH0758360A (en) * | 1993-08-19 | 1995-03-03 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
| JPH07240531A (en) * | 1993-12-20 | 1995-09-12 | Kurisutaru Device:Kk | Solar cell, its manufacture, and forming method of multilayered thin film |
| US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| CN1534798A (en) * | 2003-03-26 | 2004-10-06 | 佳能株式会社 | Laminated photovoltage element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617167A (en) * | 2013-11-01 | 2015-05-13 | 国际商业机器公司 | Method for forming photovoltaic device, and photovoltaic device |
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Application publication date: 20120530 |