CN102468408B - 接合材料、接合方法与接合结构 - Google Patents

接合材料、接合方法与接合结构 Download PDF

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CN102468408B
CN102468408B CN201010587978.4A CN201010587978A CN102468408B CN 102468408 B CN102468408 B CN 102468408B CN 201010587978 A CN201010587978 A CN 201010587978A CN 102468408 B CN102468408 B CN 102468408B
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邱国创
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Abstract

本发明披露了接合材料、接合方法与接合结构。本发明实施例提供的接合结构，包括散热基板；共熔层，位于散热基板上；以及铜层，位于共熔层上，其中散热基板包括氧化铝、氮化铝、或氧化锆，且共熔层包括掺杂有锌、锡、铟、或上述之组合的氧化铜铝、氮氧化铜铝、或氧化铜锆。

Description

接合材料、接合方法与接合结构
【技术领域】
本发明关于接合结构，更特别关于将铜片接合至散热基板的接合材料与接合方法。
【背景技术】
高发热元件如发光二极体(LED)的散热问题一直是模组化瓶颈之一。目前常见的FR4基板或铝基金属基板的低导热系数均无法将元件的热顺利导入散热器中。为改善上述缺点，可采用铜片搭配电性绝缘的陶瓷基板，将元件的热经由铜片与陶瓷基板导入散热器中。上述复合板即所谓的陶瓷直接覆铜法(DBC)。
虽然陶瓷直接覆铜法可改善元件散热问题，但此制程的温度往往超过1000℃。另一方面，为形成铜片与陶瓷基板之间的共熔层，需先氧化铜片形成氧化铜层于铜片表面，再以氧化铜层接合陶瓷基板。氧化铜层的均匀性与厚度的控制性不佳，容易造成散热不均的现象。此外若需要图案化铜层，则需额外的图案化制程如微影制程及蚀刻。
综上所述，目前极需一种新的方法接合铜片与散热基板。
【发明内容】
本发明一实施例提供一种接合材料，包括有机高分子；以及无机粉末均匀分散于该有机高分子之间，其中有机高分子与无机粉末之重量比为50∶50至10∶90，且无机粉末包含均匀混合的氧化铜与掺杂物，氧化铜与掺杂物之摩尔比为95∶5至99∶1，且掺杂物系锌、锡、铟、或上述之组合。
本发明另一实施例提供一种接合方法，包括以上述接合材料接合散热基板与铜层；以及加热接合材料，使接合材料的无机粉末与部分散热基板、与部分该铜层形成共熔层。
本发明又一实施例更提供一种接合结构，包括散热基板；共熔层，位于散热基板上；以及铜层，位于共熔层上，其中散热基板为氧化铝、氮化铝、或氧化锆，且共熔层为掺杂有锌、锡、铟、或上述之组合的氧化铜铝、氮氧化铜铝、或氧化铜锆。
【附图简单说明】
图1至3是本发明一实施例中，形成接合结构之示意图。
【主要元件符号说明】
11～接合材料；
13～散热基板；
15～铜层；
17～共熔层。
【具体实施方式】
本发明一实施例提供一种接合材料，包括有机高分子以及无机粉末。有机高分子可为PVB、PVA、甲基纤维素、其他合适之有机高分子、或上述之组合。在本发明一实施例中，有机高分子的黏度介于300至10000cps之间。若有机高分子的黏度过高，则涂层太厚不易涂布均匀。若有机高分子的黏度过低，则无法附着。在本发明一实施例中，有机高分子的重均分子量介于8000至20000之间。若有机高分子的重均分子量过高，则易有残碳。若有机高分子的重均分子量过低，则膜层强度差易于涂附后脱落。无机粉末含有均匀混合的氧化铜与掺杂物。掺杂物系锌、锡、铟、或上述之组合。氧化铜与掺杂物的摩尔比为95∶5至99∶1。若掺杂物的比例过高，对后续之接合温度并无明显助益，增加材料成本，且可能使接合界面硬脆。若掺杂物的比例过低，则无法有效降低接合温度。将氧化铜与掺杂物均匀混合后形成的无机粉末粒径分布介于20nm至300nm之间。上述无机粉末的粒径有助于其均匀分散于有机高分子中，在进一步搭配分散剂后不会沉降或均匀悬浮于胶体中。若无机粉末的粒径过大，则熔合温度上升。若无机粉末的粒径过小，则使粉体不易分散。接着将无机粉末均匀分散于有机高分子之间以形成接合材料，分散方法可为球磨、旋转搅拌、或高速离心法。有机高分子与无机粉末的重量份介于50∶50至10∶90之间。若无机粉末之比例过高，则黏度过高无法涂覆。若无机粉末之比例过低，则成膜不易且无法达到所需厚度。上述接合材料可为胶态或液态，端视制程需求而定。
如图1所示，将上述接合材料11涂覆于散热基板13上，其方法可为旋涂法、喷墨印刷法、或狭缝印刷法、浸润法、或上述之组合。散热基板13可为陶瓷材料如氧化铝、氮化铝、氧化锆、或其他可与氧化铜形成共熔层的材料。
如图2所示，接着形成铜层15于接合材料11上。在本发明一实施例中，铜层15的厚度介于100μm至500μm之间。铜层15的作用在于承载并接合发热元件如LED、IC、或类似物，接合法可为覆晶法(Flip-chip mounting)、打线接合法(wire bounding)其他已知的接合法、或未来开发的接合法。若铜层15的厚度过薄，则易使铜层变形。若铜层15的厚度过厚，则接合强度低且接合面不均匀。
接着如图3所示，加热上述结构使接合材料11中的无机粉末、散热基板13之表面、及铜层15之表面形成共熔层17。本发明一实施例中，此加热步骤之温度介于950℃至1000℃之间。在另一实施例中，此加热温度介于950℃至980℃之间。与现有技术相比，本发明之加热温度较低，可有效节省能源及工安风险。至此已完成本发明之接合结构。在某些实施例中，上述加热步骤除了可让无机粉末与散热基板13形成共熔层外，还可移除接合材料11中的高分子材料。在其他实施例中，可在上述加热步骤前，先进行一额外步骤移除接合材料11中的高分子材料。此额外步骤包含60℃至120℃之间的低温烘干成膜、200℃至500℃之间的中温去脂、及600℃至1100℃之间的高温烧覆。
在本发明一实施例中，散热基板13为氧化铝(Al2O3)，则共熔层17为掺杂有锌、锡、铟、或上述之组合的氧化铜铝(CuAl2O4)。在本发明另一实施例中，散热基板13为氮化铝(AlN)，则共熔层17为掺杂有锌、锡、铟、或上述之组合的氮氧化铜铝(CuAlNO)。在本发明又一实施例中，散热基板为氧化锆(ZrO2)，则共熔层为掺杂有锌、锡、铟、或上述之组合的氧化铜锆(CuZrO3)。
经由切片实验，可知上述共熔层17为1μm至20μm。共熔层17的厚度受控于接合材料11的厚度。若共熔层17/接合材料11的厚度过薄，则接合强度低。若共熔层17/接合材料11的厚度过厚，则散热特性差。
在本发明一实施例中，若铜层15上的发热元件可承受高温，可先将铜层15接合至发热元件后，再将铜层15的另一侧覆盖至接合材料11上。在本发明另一实施例中，则先形成上述之接合结构后，再将发热元件接合至铜层15上。可以理解的是，由于铜层15与接合材料11在制程上属不同单元，因此贴覆至接合材料11上的铜层15可为连续的层状结构或不连续的图案。与现有技术相比，直接贴覆不连续的铜层15图案至接合材料11上，可避免图案化铜层15的蚀刻制程损伤共熔层17的风险。
在一实施例中，铜层15上的元件所发出的热可经由铜层15、共熔层17、与散热基板13直接散逸至环境中。在某些实施例中，可在散热基板13下另行架设散热器如风扇、热导管、其他散热器、或上述之组合，以进一步加速散热效果。
为了让本发明之上述和其他目的、特征、和优点能更明显易懂，下文特举数个实施例配合所附图式，作详细说明如下：
【实施例】
比较例1
取化学法生成之40g纳米氧化铜粒分散于60g之有机高分子浆料(致嘉科技BP系列黏结剂)中，形成接合材料。上述化学生成法将金属离子分散在高分子溶液中，以浓度配比的方式精确控制所要组成中金属离子的摩尔数，并利用螯合剂将金属离子吸附转成金属络合物。透过温度使其裂解后生成纳米氧化物。上述分散方法为三滚筒混合(购自KOENEN之EXAKT-35，操作速度2～3l/h，混合30分钟至120分钟)。接着将上述接合材料旋转涂布于氧化铝基板(96％氧化铝，购自九豪工业，导热性20W/mK)上，再将厚度为300μm之铜箔贴附于上述接合材料。最后加热上述结构使接合材料与其接触铜层及氧化铝基板之部分形成厚度为0.5～3μm的共熔层。上述接合结构的导热性为约40W/mk，且共熔层的形成温度为约1020℃。
实施例1-1
与比较例1类似，差别在于实施例1-1的氧化铜粒掺杂有0.1摩尔％的锌。最后形成的接合结构的导热性为38W/mk(高于铝基板的导热性)，但厚度为0.5～3μm的共熔层的形成温度降至约980℃。
实施例1-2
与比较例1类似，差别在于实施例1-2之氧化铜粒掺杂有0.3摩尔％的锌。最后形成之接合结构的导热性为30W/mk(高于铝基板之导热性)，但厚度为0.5～3μm的共熔层之形成温度降至约960℃。
实施例1-3
与比较例1类似，差别在于实施例1-3之氧化铜粒掺杂有0.5摩尔％的锌。最后形成之接合结构的导热性为30W/mk(高于铝基板之导热性)，但厚度为0.5～3μm的共熔层之形成温度降至约960℃。由实施例1-1至1-3与比较例1的比较可知，氧化铜粒适度掺杂锌可有效降低共熔层的形成温度，且不影响接合结构的导热性。
实施例2-1
与比较例1类似，差别在于实施例2-1之氧化铜粒掺杂有0.1摩尔％的锡。最后形成之接合结构的导热性为35W/mk(高于铝基板之导热性)，但厚度为0.5～3μm的共熔层之形成温度降至约970℃。
实施例2-2
与比较例1类似，差别在于实施例2-2之氧化铜粒掺杂有0.3摩尔％之锡。最后形成之接合结构的导热性为32W/mk(高于铝基板之导热性)，但厚度为0.5～3μm的共熔层之形成温度降至约950℃。
实施例2-3
与比较例1类似，差别在于实施例2-3之氧化铜粒掺杂有0.5摩尔％之锡。最后形成之接合结构的导热性为30W/mk(高于铝基板之导热性)，但厚度为0.5～3μm的共熔层之形成温度降至约950℃。由实施例2-1至2-3与比较例1之比较可知，氧化铜粒适度掺杂锡可有效降低共熔层的形成温度，且不影响接合结构的导热性。
实施例3-1
与比较例1类似，差别在于实施例3-1之氧化铜粒掺杂有0.1摩尔％之铟。最后形成之接合结构的导热性为34W/mk(高于铝基板之导热性)，但厚度为0.5～3μm的共熔层之形成温度降至约980℃。
实施例3-2
与比较例1类似，差别在于实施例3-2之氧化铜粒掺杂有0.3摩尔％之铟。最后形成之接合结构的导热性为33W/mk(高于铝基板之导热性)，但厚度为0.5～3μm的共熔层之形成温度降至约980℃。
实施例3-3
与比较例1类似，差别在于实施例1-3之氧化铜粒掺杂有0.5摩尔％之铟。最后形成之接合结构的导热性为33W/mk(高于铝基板之导热性)，但厚度为0.5～3μm之共熔层之形成温度降至约960℃。由实施例3-1至3-3与比较例1之比较可知，氧化铜粒适度掺杂铟可有效降低共熔层的形成温度，且不影响接合结构的导热性。
虽然本发明已以数个较佳实施例揭露如上，然其并非用以限定本发明，任何本领域技术人员，在不脱离本发明之精神和范围内，当可作任意之更动与润饰，因此本发明之保护范围当视后附之权利要求所界定者为准。

Claims (11)

1.一种接合材料，包括：
有机高分子；以及
无机粉末均匀分散于该有机高分子之间，
其中该有机高分子与该无机粉末之重量比为50:50至10:90；以及
其中该无机粉末包含均匀混合的氧化铜与掺杂物，该氧化铜与该掺杂物之摩尔比为99.5:0.5至99.9:0.1，且该掺杂物系锌、锡、铟、或上述之组合，
其中该有机高分子是PVB、PVA、甲基纤维素、或上述之组合，且该有机高分子之黏度介于300至10000cps之间。
2.如权利要求1所述的接合材料，其中该无机粉末之粒径分布为20nm至300nm。
3.一种接合方法，包括：
以权利要求1所述的接合材料接合散热基板与铜层；以及
加热该接合材料，使该接合材料之无机粉末、部分该散热基板、与部分该铜层形成共熔层。
4.如权利要求3所述的接合方法，其中该散热基板包括氧化铝、氮化铝、或氧化锆，且该共熔层包括掺杂有锌、锡、铟、或上述之组合的氧化铜铝、氮氧化铜铝、或氧化铜锆。
5.如权利要求3所述的接合方法，其中加热该接合材料，使该接合材料与部分该散热基板形成该共熔层的温度为950℃至1000℃。
6.如权利要求3所述的接合方法，其中加热该接合材料，使该接合材料与部分该散热基板形成该共熔层的制程气体为氮气。
7.如权利要求3所述的接合方法，其中将该接合材料形成于散热基板与铜层之间的步骤包括印刷法或旋转涂布法。
8.一种接合结构，包括：
散热基板；
共熔层，位于该散热基板上；以及
铜层，位于该共熔层上，
其中该散热基板包括氧化铝、氮化铝、或氧化锆，且该共熔层包括掺杂有锌、锡、铟、或上述之组合的氧化铜铝、氮氧化铜铝、或氧化铜锆，
其中所述共熔层为权利要求3中形成的共熔层。
9.如权利要求8所述的接合结构，其中该共熔层及/或该铜层包括连续层状结构或不连续的图案。
10.如权利要求8所述的接合结构，其中该共熔层的厚度为1μm至20μm。
11.如权利要求8所述的接合结构，其中该铜层的厚度为100μm至500μm。
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