CN102456680A - Light emitting diode module group - Google Patents
Light emitting diode module group Download PDFInfo
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- CN102456680A CN102456680A CN2010105104174A CN201010510417A CN102456680A CN 102456680 A CN102456680 A CN 102456680A CN 2010105104174 A CN2010105104174 A CN 2010105104174A CN 201010510417 A CN201010510417 A CN 201010510417A CN 102456680 A CN102456680 A CN 102456680A
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- emitting diode
- light emitting
- backlight unit
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Abstract
The invention provides a light emitting diode module group which comprises a circuit board and a plurality of light emitting diode chipsets provided on the circuit board. Each light emitting diode chipset comprises two light emitting diode chips, a first phosphor layer covers a light emitting diode chip, and a second phosphor layer covers the other light emitting diode chip. Light emitted by the two light emitting diode chips goes through the first phosphor layer and the second phosphor layer respectively and mix together to form white light. According to the light emitting diode module group, only one light emitting diode chip is employed, through cooperation of the light emitting diode chips and phosphor and light mixing, the white light is emitted, thus a light decay degree and a working life of the light emitting diode chips of the light emitting diode chipset are equivalent, and an off-color phenomenon of the white light emitted by the light emitting diode module group is avoided.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements, particularly a kind of light emitting diode module.
Background technology
Light-emitting diode (LED) has that energy-saving and environmental protection, safety, long-life, color are abundant, miniature, high brightness, is prone to advantage such as light modulation as solid light source, is a kind of light source that meets the green illumination requirement.In the park, Landscape Lighting place such as greenery patches, square, building and overhead road of city; Because the LED rich color only just can cover all saturated color in the cie color curve fully with led light source in theory, and shades of colour LED almost can have no restrictedly to produce any color through mixed light and with the integration of fluorescent material; But while low-voltage DC supply; Light modulation is convenient, therefore has the incomparable advantage of other light source in the Landscape Lighting field, has obtained extensive use at present.And LED has that spectral line is narrow, luminosity and forward current are approximated to direct ratio, response speed is fast and volume is little characteristics in operating voltage range, makes it be very suitable for mixed light and uses.
The LED module is to send the mixed light pattern that white light adopts to generally comprise at least one group of three led chips that send red, green, blue coloured light respectively, and the red, green, blue coloured light that it sends respectively mixes and forms white light.Yet because the light decay degree of these three led chips and life-span are all different, the colour cast phenomenon appears in the white light that can make the LED module send because of the light decay of one of them led chip.In addition, three led chips produce heat to take up space very much on the circuit board of the Chinese character pin-shaped LED of being arranged in module and to be prone to, and can't be applied on the frivolous product.
Summary of the invention
In view of this, be necessary to provide a kind of light emitting diode module that adopts the mixed light pattern to send white light, it only comprises a kind of light-emitting diode chip for backlight unit, can reach the purpose that prevents colour cast.
A kind of light emitting diode module; Comprise a circuit board and be installed on the some LED chip on this circuit board; Each LED chip comprises that two light-emitting diode chip for backlight unit, first phosphor powder layer and the lid that cover on the light-emitting diode chip for backlight unit that is placed in one place second phosphor powder layer on another light-emitting diode chip for backlight unit, and the light that said two light-emitting diode chip for backlight unit send forms white light through mixing behind first, second phosphor powder layer respectively again.
Light emitting diode module of the present invention only adopts a kind of light-emitting diode chip for backlight unit; Mixed light sends white light with cooperating of fluorescent material through light-emitting diode chip for backlight unit; Make that light decay degree, the working life of light-emitting diode chip for backlight unit of LED chip is suitable, the colour cast phenomenon appears in the white light that the light emitting diode module in avoiding the use of is sent.
With reference to the accompanying drawings, in conjunction with specific embodiment the present invention is done further description.
Description of drawings
Fig. 1 is the front schematic view of the light emitting diode module of first embodiment of the invention.
Fig. 2 be among Fig. 1 light emitting diode module along the cutaway view of II-II line.
Fig. 3 is another front schematic view of light emitting diode module among Fig. 1, and wherein the light-emitting diode chip for backlight unit of light emitting diode module is provided with at interval.
Fig. 4 is the generalized section of the light emitting diode module of second embodiment of the invention.
The main element symbol description
| |
10 |
| |
20、20a |
| Light-emitting diode chip for |
21、21a |
| First |
22、22a |
| Second |
23、23a |
Embodiment
See also Fig. 1, a kind of light emitting diode module is provided in the first embodiment of the invention, this light emitting diode module comprises a circuit board 10 and is installed on the some LED chip 20 on this circuit board 10.
Please consult Fig. 2 and Fig. 3 simultaneously, above-mentioned LED chip 20 comprises that first phosphor powder layer 22 and lid that two light-emitting diode chip for backlight unit 21, the lids that are set up in parallel are placed in one on the light-emitting diode chip for backlight unit 21 place second phosphor powder layer 23 on another light-emitting diode chip for backlight unit 21.The setting (as shown in Figure 2) of joining of two light-emitting diode chip for backlight unit 21 of each LED chip 20 also can be provided with (as shown in Figure 3) at interval, and the two can conduct electricity connection, also can insulate.Be appreciated that ground, said two light-emitting diode chip for backlight unit 21 that are set up in parallel can be two parts of a light-emitting diode chip for backlight unit, and said first phosphor powder layer 22, second phosphor powder layer 23 side by side lid place on this light-emitting diode chip for backlight unit 21.
Light-emitting diode chip for backlight unit 21 among the present invention is the compound semiconductor of gallium nitride (GaN) based III-V group or other families.In the present embodiment, the light that sends of said light-emitting diode chip for backlight unit 21 is blue light.
Said first phosphor powder layer 22 is a green emitting phosphor, and the blue light that the light-emitting diode chip for backlight unit 21 of corresponding like this first phosphor powder layer 22 sends changes cyan light into after through first phosphor powder layer 22.
Said second phosphor powder layer 23 is a red fluorescence powder, and the blue light that another light-emitting diode chip for backlight unit 21 of corresponding like this second phosphor powder layer 23 sends changes purple light into after through second phosphor powder layer 23.
Please consult Fig. 4 simultaneously, the LED chip 20a in the second embodiment of the invention comprises that the two light-emitting diode chip for backlight unit 21a, the first phosphor powder layer 22a and the lid that lid is placed in one on the light-emitting diode chip for backlight unit 21a that are arranged side by side place the second phosphor powder layer 23a on another light-emitting diode chip for backlight unit 21a.In the present embodiment, the light that sends of said light-emitting diode chip for backlight unit 21a is ultraviolet light.
In the present embodiment; The said first phosphor powder layer 22a is made by the phosphor material powder of value in 490nm～550nm scope of emission wavelength, and the ultraviolet light that the light-emitting diode chip for backlight unit 21a of the corresponding like this first phosphor powder layer 22a sends changes cyan light into after through the first phosphor powder layer 22a.
In the present embodiment; The said second phosphor powder layer 23a is made by the phosphor material powder of value in 590nm～630nm scope of emission wavelength, and the ultraviolet light that another light-emitting diode chip for backlight unit 21a of the corresponding like this second phosphor powder layer 23a sends changes purple light into after through the second phosphor powder layer 23a.
Can know by the mixed light principle, other colouramas of the superimposed formation of the three primary colors light of different proportion (red, blue, green light), its rule comprises: red light stack green light forms sodium yellow; Red light stack blue light forms purple light; Blue light stack green light forms cyan light; Red light, blue light, green light superpose together and form white light etc.The applied mixed light rule of light emitting diode module of the present invention forms white light for purple light mixed light that cyan light is superposeed, and the light that each LED chip 20 is sent is the white light that mixed light forms.
Consult Fig. 1 to Fig. 4 once more, some LED chip 20 are linear array on said circuit board 10 in the light emitting diode module of the present invention.First phosphor powder layer 22 of two adjacent LED chip 20,22a and second phosphor powder layer 23,23a shift to install mutually, and first phosphor powder layer 22 of promptly arbitrary LED chip 20,22a are provided with over against second phosphor powder layer 23, the 23a of the LED chip 20 adjacent with this LED chip 20.The white light that makes light emitting diode module send like this is more even, and improves color saturation.
Light emitting diode module of the present invention only adopts a kind of light-emitting diode chip for backlight unit 21,21a; Mixed light sends white light with cooperating of fluorescent material through light-emitting diode chip for backlight unit 21,21a; Make that light decay degree, the working life of light-emitting diode chip for backlight unit 21,21a are suitable, the colour cast phenomenon appears in the light of avoiding light emitting diode module to send.Because each LED chip 20 only needs two light-emitting diode chip for backlight unit 21,21a, than traditional three primary colors mixed light, can reduce the use amount of chip, thereby save cost.And because the minimizing of number of chips, the wiring on the circuit board 10 also can be made its corresponding simplified thereupon, and the surrounding space of each light-emitting diode chip for backlight unit 21,21a increases simultaneously, more helps heat radiation.
Be appreciated that ground, for the person of ordinary skill of the art, can make change and the distortion that other various pictures are answered by technical conceive according to the present invention, and all these change the protection range that all should belong to claim of the present invention with distortion.
Claims (12)
1. light emitting diode module; Comprise a circuit board and be installed on the some LED chip on this circuit board; It is characterized in that: each LED chip comprises that two light-emitting diode chip for backlight unit, first phosphor powder layer and the lid that cover on the light-emitting diode chip for backlight unit that is placed in one place second phosphor powder layer on another light-emitting diode chip for backlight unit, and the light that said two light-emitting diode chip for backlight unit send forms white light through mixing behind first, second phosphor powder layer respectively again.
2. light emitting diode module as claimed in claim 1 is characterized in that: two light-emitting diode chip for backlight unit of each LED chip join side by side and are provided with or are provided with separately.
3. light emitting diode module as claimed in claim 1 is characterized in that: two light-emitting diode chip for backlight unit of each LED chip are two parts of same light-emitting diode chip for backlight unit.
4. like each described light emitting diode module in the claim 1 to 3, it is characterized in that: the light that said light-emitting diode chip for backlight unit sends is blue light.
5. light emitting diode module as claimed in claim 4 is characterized in that: said first phosphor powder layer is a green emitting phosphor.
6. light emitting diode module as claimed in claim 4 is characterized in that: said second phosphor powder layer is a red fluorescence powder.
7. like each described light emitting diode module in the claim 1 to 3, it is characterized in that: the light that said light-emitting diode chip for backlight unit sends is ultraviolet light.
8. light emitting diode module as claimed in claim 7 is characterized in that: said first phosphor powder layer is made by the phosphor material powder of value in 490nm～550nm scope of emission wavelength.
9. light emitting diode module as claimed in claim 7 is characterized in that: said second phosphor powder layer is made by the phosphor material powder of value in 590nm～630nm scope of emission wavelength.
10. light emitting diode module as claimed in claim 1 is characterized in that: first phosphor powder layer and second phosphor powder layer of two adjacent LED chip shift to install mutually.
11. light emitting diode module as claimed in claim 1 is characterized in that: the light that said light-emitting diode chip for backlight unit sends changes cyan light into after through first phosphor powder layer.
12. light emitting diode module as claimed in claim 1 is characterized in that: the light that said light-emitting diode chip for backlight unit sends changes purple light into after through second phosphor powder layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105104174A CN102456680A (en) | 2010-10-18 | 2010-10-18 | Light emitting diode module group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105104174A CN102456680A (en) | 2010-10-18 | 2010-10-18 | Light emitting diode module group |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102456680A true CN102456680A (en) | 2012-05-16 |
Family
ID=46039665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105104174A Pending CN102456680A (en) | 2010-10-18 | 2010-10-18 | Light emitting diode module group |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102456680A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950385A (en) * | 2019-04-24 | 2019-06-28 | 业成科技（成都）有限公司 | Light-emitting component, display device, luminescence component and its manufacturing method |
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| US20070223219A1 (en) * | 2005-01-10 | 2007-09-27 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-cri warm white light and light fixtures including the same |
| CN101124682A (en) * | 2004-12-24 | 2008-02-13 | 株式会社东芝 | White LED, backlight and liquid crystal display |
| CN101170852A (en) * | 2007-11-14 | 2008-04-30 | 电子科技大学 | An organic EL part with ultra-thin layer structure |
| US20090140633A1 (en) * | 2005-11-04 | 2009-06-04 | Matsushita Electric Industrial Co., Ltd. | Light-emitting module, and display unit and lighting unit using the same |
| WO2010023840A1 (en) * | 2008-08-28 | 2010-03-04 | Panasonic Corporation | Semiconductor light emitting device and backlight source, backlight source system, display device, and electronic device using the same |
| CN101677117A (en) * | 2008-09-19 | 2010-03-24 | 先进开发光电股份有限公司 | Method for configuring high color rendering light emitting diode and system |
-
2010
- 2010-10-18 CN CN2010105104174A patent/CN102456680A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101124682A (en) * | 2004-12-24 | 2008-02-13 | 株式会社东芝 | White LED, backlight and liquid crystal display |
| US20070223219A1 (en) * | 2005-01-10 | 2007-09-27 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-cri warm white light and light fixtures including the same |
| US20090140633A1 (en) * | 2005-11-04 | 2009-06-04 | Matsushita Electric Industrial Co., Ltd. | Light-emitting module, and display unit and lighting unit using the same |
| CN101170852A (en) * | 2007-11-14 | 2008-04-30 | 电子科技大学 | An organic EL part with ultra-thin layer structure |
| WO2010023840A1 (en) * | 2008-08-28 | 2010-03-04 | Panasonic Corporation | Semiconductor light emitting device and backlight source, backlight source system, display device, and electronic device using the same |
| CN101677117A (en) * | 2008-09-19 | 2010-03-24 | 先进开发光电股份有限公司 | Method for configuring high color rendering light emitting diode and system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950385A (en) * | 2019-04-24 | 2019-06-28 | 业成科技（成都）有限公司 | Light-emitting component, display device, luminescence component and its manufacturing method |
| CN109950385B (en) * | 2019-04-24 | 2020-09-08 | 业成科技（成都）有限公司 | Light emitting element, display device, light emitting module and method for manufacturing the same |
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Application publication date: 20120516 |