CN102437241A - Preparation method of solar cell with elimination of printing wave line - Google Patents
Preparation method of solar cell with elimination of printing wave line Download PDFInfo
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- CN102437241A CN102437241A CN2011103948657A CN201110394865A CN102437241A CN 102437241 A CN102437241 A CN 102437241A CN 2011103948657 A CN2011103948657 A CN 2011103948657A CN 201110394865 A CN201110394865 A CN 201110394865A CN 102437241 A CN102437241 A CN 102437241A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a preparation method of a solar cell with elimination of a printing wave line. The method is characterized in that the method comprises the following steps that: a silicon wafer is inserted into a petal basket along the downward direction of a cutting trace of the silicon wafer; the monocrystalline silicon wafer is provided and surface texturing is carried out; the processed silicon wafer is inserted into a quartz boat along the downward direction of the cutting trace of the silicon wafer; a diffusion layer is formed on the surface of the silicon wafer that has been processed by texturing; the diffused silicon wafer is placed in a bearing box along a certain direction; etching is carried out to remove PN nodes around the silicon wafer as well as the etched silicon wafer is inserted into the petal basket along the downward direction of the cutting trace of the silicon wafer; pickling is carried out to remove phosphosilicate glass; a passivation and antireflection layer is manufactured; and the silicon wafer that has been processed by film coating is placed in a to-be-printed bearing box along a certain direction, so that after printing, a fine grid line direction is vertical to a cutting line direction; and a cell back side slurry and a right side slurry are successively printed as well as sintering is carried out to form a back side Ag electrode, a back side aluminium back surface field and a right side Ag electrode. According to the invention, the method can be operated simply and conveniently; and compared with a traditional production mode, the industrialized production mode enables no extra production cost to be generated.
Description
Technical field
The present invention relates to a kind of manufacturing approach of semiconductor element, relate in particular to a kind of preparation method who eliminates the solar cell of printing ripple glaze, belong to the manufacture of solar cells manufacture technology field.
Background technology
Along with the continuous development of solar cell production technology, industry is also improving constantly the requirement of battery quality, not only is embodied in the battery electrical property aspect, simultaneously the battery outward appearance is also had higher requirement.In making the solar cell process, silk screen printing is one extremely important operation, prints positive electrode, back electrode and back of the body electric field through silk screen printing respectively at the battery front side and the back side.Wherein the printing quality of positive electrode has very big influence to the presentation quality of battery, and in normal production process, the fringe phenomena of similar ripple glaze shape often appears in the printing grid line outward appearance of positive electrode, and this ripple glaze has a strong impact on the presentation quality of battery.The reason that this ripple glaze occurs mainly is that the optical phenomena by a kind of Moire effect causes.
Moire effect is the visual results that interferes with constant angles and frequency between two lines or two objects, when human eye can't be differentiated these two lines or two objects, can only see the decorative pattern of interference, and this optical phenomena is exactly a Moire fringe.Silicon rod is online can to cause the cutting stria when cutting into silicon chip, and stria is wide about 70 microns, about 45 microns of two stria spacings, and wherein two edge directions are approximate parallel with silicon chip for direction, and thin grid line and slice, thin piece also keeping parallelism of two edges wherein during printing.When thin grid line and stria intersect printing with approximately parallel low-angle; Between thin grid line and the line of cut can compare in the appearance position; And the cutting trace can cause the local slippage of the appearance of thin grid line in printing and sintering process, subside, and at this moment the Moire fringe phenomenon will be more obvious.
Summary of the invention
The purpose of this invention is to provide a kind of preparation method that can eliminate the solar cell of printing ripple glaze.
In order to achieve the above object, technical scheme of the present invention has provided a kind of preparation method who eliminates the solar cell of printing ripple glaze, it is characterized in that step is:
Step 1, monocrystalline silicon piece is provided, silicon chip is inserted in the making herbs into wool gaily decorated basket along cutting trace downward direction, again the monocrystalline silicon sheet surface texturing is formed suede structure;
Step 2, the silicon chip after the making herbs into wool is inserted in the quartz boat along silicon chip cutting trace downward direction, adopt phosphorus source diffusion method to form PN junction again, the silicon chip after the diffusion is taken off quartz boat and is placed in the Carrier box by equidirectional at silicon chip surface;
Step 3, silicon chip is carried out the PN junction that plasma etching is removed periphery;
Step 4, the silicon chip that will remove after periphery P N ties insert in the gaily decorated basket along cutting trace downward direction, carry out the phosphorosilicate glass that silicon chip surface is removed in pickling again;
Step 5, employing plasma reinforced chemical vapour deposition method form passivation and antireflection layer at diffusingsurface deposition one deck silicon nitride film of above-mentioned silicon chip, and the silicon chip behind the plated film is placed in the Carrier box to be printed by equidirectional;
Step 6, print back electrode slurry and back of the body electric field slurry through silk screen printing successively in silicon chip back, printing positive electrode slurry makes the direction of the superfine grid line of positive electricity become vertical configuration with the line of cut direction during printing in the front;
Step 7, to the printing after the battery sheet carry out sintering; Form the back side Ag electrode and the aluminium back of the body field of solar cell; The front electrode slurry then passes passivation and antireflection layer contacts with diffusion layer, forms the front surface A g electrode of the solar cell with good ohmic contact.
Preferably; Saidly the monocrystalline silicon sheet surface texturing is formed suede structure comprise the steps: the monocrystalline silicon piece of supplied materials is inserted in the making herbs into wool gaily decorated basket along cutting trace downward direction, the silicon chip in the gaily decorated basket of will packing into carries out prerinse, and ultrasonic wave is adopted in prerinse; And add certain washing detergent (4L hydrogen peroxide solution); Afterwards silicon chip being placed temperature is 75-80 ℃, and mass percent concentration is to carry out surface-texturing technology in the sodium hydroxide solution of 1%-2%, and adds 30-50ml making herbs into wool catalyst; Form " pyramid " shape suede structure of the size of uniformity with silicon chip surface, make the surface have good sunken light effect at 1-3um in < 100>crystal orientation.
Preferably; Saidly monocrystalline silicon piece is diffuseed to form PN junction comprise the steps: the silicon chip after the making herbs into wool to insert in the quartz boat along cutting trace downward direction; With liquid POCl3 is raw material, under 850 ℃, carries out the constant temperature diffusion, finally forms PN junction at silicon chip surface; Square resistance is controlled at 55 ± 3ohm/, and the silicon chip after will spreading at last takes off and is placed in the Carrier box by certain orientation from quartz boat.
Preferably, said removal silicon chip surface periphery P N knot comprises the steps: to adopt the PN junction of the silicon chips periphery after the method for plasma etching is mixed weight to get rid of.
Preferably; The said phosphorosilicate glass that carries out pickling removal silicon chip surface comprises the steps: the silicon chip after the etching is inserted in the making herbs into wool gaily decorated basket along cutting trace downward direction; It is the hydrofluoric acid solution of 7-13% that the interior silicon chip of the making herbs into wool gaily decorated basket of will packing into places percent by volume, cleans and removes the phosphorosilicate glass of silicon chip surface clean in 3-5 minute.
Preferably; Said formation passivation and antireflection layer at silicon chip surface comprises the steps: to adopt the plasma reinforced chemical vapour deposition method to form passivation and antireflection layer at diffusingsurface deposition one deck silicon nitride film of silicon chip; The THICKNESS CONTROL of film is at 80～85nm; Refractive index is controlled at 2.05～2.1, to guarantee that good antireflective and passivation effect are arranged, at last the silicon chip behind the plated film is placed in the Carrier box by certain orientation.
Preferably; Said silk screen printing comprises the steps: to use screen printing screens; Print the back electrode slurry overleaf earlier, republish back of the body electric field slurry, and under 200 ℃～300 ℃ temperature, dry respectively; The printing positive electrode slurry in the front makes the direction of the thin grid line in printing back become vertical configuration with the line of cut direction.
Preferably, said sintering comprises the steps: the silicon chip after the printing is sent to sintering furnace, and after oven dry under 250-350 ℃ the temperature, chip transmission gets into surface temperature successively under about 800 ℃ atmosphere, carrying out sintering about 500 ℃ earlier.
The preparation method of solar cell provided by the invention has a bit following: 1) more just added the control of silicon chip cutting trace direction with conventional production methods, and simple, convenient; 2) compare with conventional production methods, this method does not have extra production cost to produce in process of production, is easy to industrialization.
Embodiment
For making the present invention more obviously understandable, elaborate as follows with preferred embodiment now.
Embodiment 1
The invention provides a kind of preparation method who eliminates the solar cell of printing ripple glaze, the steps include:
A. surface-texturing
Monocrystalline silicon piece to supplied materials inserts in the making herbs into wool gaily decorated basket along cutting trace downward direction, and the silicon chip in the gaily decorated basket of will packing into again carries out prerinse, and ultrasonic wave is adopted in prerinse, and adds certain washing detergent.Afterwards silicon chip being placed temperature is 75 ℃; Mass percent concentration is to carry out surface-texturing technology in 2% the sodium hydroxide solution; And add an amount of making herbs into wool catalyst; Form " pyramid " shape suede structure of the size of uniformity with silicon chip surface, make the surface have good sunken light effect at 1-3um in < 100>crystal orientation.
B. diffusion
Silicon chip after the making herbs into wool is inserted in the quartz boat with edge cutting trace downward direction; (
) is raw material with liquid POCl3; Under 850 ℃, carry out the constant temperature diffusion; Finally form PN junction at silicon chip surface; Square resistance is controlled at 55 ± 3ohm/, and the silicon chip after will spreading at last takes off and is placed in the Carrier box by certain orientation from quartz boat.
C. etching
The PN junction of the silicon chips periphery after the method for employing plasma etching is mixed weight is got rid of.
D. dephosphorization silex glass
Silicon chip after the etching is inserted in the gaily decorated basket along cutting trace downward direction, and it is about 10% hydrofluoric acid solution that the silicon chip in the gaily decorated basket of will packing into again places percent by volume, cleans and the phosphorosilicate glass of silicon chip surface is removed totally in 3-5 minute.
E. make antireflective coating
Adopt plasma reinforced chemical vapour deposition (PECVD) method to form passivation and antireflection layer at diffusingsurface deposition one deck silicon nitride film of silicon chip, the THICKNESS CONTROL of film is at 80nm; Refractive index is controlled at 2.1, to guarantee that good antireflective and passivation effect are arranged, at last the silicon chip behind the plated film is placed in the Carrier box to be printed by certain orientation.
G. silk screen printing and sintering
Use screen printing screens, print the back electrode slurry overleaf earlier, republish back of the body electric field slurry, and under 300 ℃ temperature, dry back printing positive electrode slurry respectively, the direction of thin grid line becomes vertical configuration with the line of cut direction after the feasible printing.Silicon chip after the printing is sent to sintering furnace; Earlier after oven dry under the temperature about 350 ℃; Chip transmission gets into surface temperature and under 500 ℃ to 800 ℃ atmosphere, carries out sintering successively, and backplate and electric field slurry form the back side Ag electrode and the back side aluminium back of the body field of solar cell through this sintering; The front electrode slurry then passes passivation and antireflection layer contacts with diffusion layer, forms the front surface A g electrode of the solar cell with good ohmic contact, thereby has accomplished the making of the solar cell technology of eliminating printing ripple glaze phenomenon.
Embodiment 2
The difference of present embodiment and embodiment 1 is that in step a, it is 80 ℃ that silicon chip is placed temperature, and mass percent concentration is to carry out surface-texturing technology in 1% the sodium hydroxide solution.In step g, use screen printing screens, print the back electrode slurry overleaf earlier, republish back of the body electric field slurry, and under 200 ℃ temperature, dry respectively.Silicon chip after the printing is sent to sintering furnace, and after oven dry under the temperature about 250 ℃, chip transmission gets into surface temperature and under 500 ℃ to 800 ℃ atmosphere, carries out sintering successively earlier.Other steps are with embodiment 1.
Though the present invention discloses as above with preferred embodiment; Right its is not that any those skilled in the art are not breaking away from the spirit and scope of the present invention in order to qualification the present invention; When can doing a little modification and perfect, so protection scope of the present invention is when being as the criterion with what claims defined.
Claims (8)
1. preparation method of solar cell who eliminates the printing ripple glaze is characterized in that step is:
Step 1, monocrystalline silicon piece is provided, silicon chip is inserted in the making herbs into wool gaily decorated basket along cutting trace downward direction, again the monocrystalline silicon sheet surface texturing is formed suede structure;
Step 2, the silicon chip after the making herbs into wool is inserted in the quartz boat along silicon chip cutting trace downward direction, adopt phosphorus source diffusion method to form PN junction again, the silicon chip after the diffusion is taken off quartz boat and is placed in the Carrier box by equidirectional at silicon chip surface;
Step 3, silicon chip is carried out the PN junction that plasma etching is removed periphery;
Step 4, the silicon chip that will remove after periphery P N ties insert in the gaily decorated basket along cutting trace downward direction, carry out the phosphorosilicate glass that silicon chip surface is removed in pickling again;
Step 5, employing plasma reinforced chemical vapour deposition method form passivation and antireflection layer at diffusingsurface deposition one deck silicon nitride film of above-mentioned silicon chip, and the silicon chip behind the plated film is placed in the Carrier box to be printed by equidirectional;
Step 6, print back electrode slurry and back of the body electric field slurry through silk screen printing successively in silicon chip back, printing positive electrode slurry makes the direction of the superfine grid line of positive electricity become vertical configuration with the line of cut direction during printing in the front;
Step 7, to the printing after the battery sheet carry out sintering; Sintering back electrode slurry is carried on the back the field with back side Ag electrode and aluminium that back of the body electric field slurry forms solar cell; The front electrode slurry then passes passivation and antireflection layer contacts with diffusion layer, forms the front surface A g electrode of the solar cell with good ohmic contact.
2. a kind of preparation method who eliminates the solar cell of printing ripple glaze as claimed in claim 1; It is characterized in that; Saidly the monocrystalline silicon sheet surface texturing is formed suede structure comprise the steps: the monocrystalline silicon piece of supplied materials is inserted in the making herbs into wool gaily decorated basket along cutting trace downward direction, the silicon chip in the gaily decorated basket of will packing into carries out prerinse, and ultrasonic wave is adopted in prerinse; And add certain washing detergent (4L hydrogen peroxide solution); Afterwards silicon chip being placed temperature is 75-80 ℃, and mass percent concentration is to carry out surface-texturing technology in the sodium hydroxide solution of 1%-2%, and adds an amount of 30-50ml making herbs into wool catalyst; Form " pyramid " shape suede structure of the size of uniformity with silicon chip surface, make the surface have good sunken light effect at 1-3um in < 100>crystal orientation.
3. a kind of preparation method who eliminates the solar cell of printing ripple glaze as claimed in claim 1; It is characterized in that; Saidly monocrystalline silicon piece is diffuseed to form PN junction comprise the steps: the silicon chip after the making herbs into wool to insert in the quartz boat along cutting trace downward direction; With liquid POCl3 is raw material, under 850 ℃, carries out the constant temperature diffusion, finally forms PN junction at silicon chip surface; Square resistance is controlled at 55 ± 3ohm/, and the silicon chip after will spreading at last takes off and is placed in the Carrier box by certain orientation from quartz boat.
4. a kind of preparation method who eliminates the solar cell of printing ripple glaze as claimed in claim 1; It is characterized in that said removal silicon chip surface periphery P N knot comprises the steps: to adopt the PN junction of the silicon chips periphery after the method for plasma etching is mixed weight to get rid of.
5. a kind of preparation method who eliminates the solar cell of printing ripple glaze as claimed in claim 1; It is characterized in that; The said phosphorosilicate glass that carries out pickling removal silicon chip surface comprises the steps: the silicon chip after the etching is inserted in the making herbs into wool gaily decorated basket along cutting trace downward direction; It is the hydrofluoric acid solution of 7-13% that the interior silicon chip of the making herbs into wool gaily decorated basket of will packing into places percent by volume, cleans and removes the phosphorosilicate glass of silicon chip surface clean in 3-5 minute.
6. a kind of preparation method who eliminates the solar cell of printing ripple glaze as claimed in claim 1; It is characterized in that; Said formation passivation and antireflection layer at silicon chip surface comprises the steps: to adopt the plasma reinforced chemical vapour deposition method to form passivation and antireflection layer at diffusingsurface deposition one deck silicon nitride film of silicon chip; The THICKNESS CONTROL of film is at 80～85nm; Refractive index is controlled at 2.05～2.1, to guarantee that good antireflective and passivation effect are arranged, at last the silicon chip behind the plated film is placed in the Carrier box to be printed by certain orientation.
7. a kind of preparation method who eliminates the solar cell of printing ripple glaze as claimed in claim 1; It is characterized in that said silk screen printing comprises the steps: to use screen printing screens, print the back electrode slurry overleaf earlier; Republish back of the body electric field slurry; And under 200 ℃～300 ℃ temperature, dry respectively, the printing positive electrode slurry in the front makes the superfine grid line direction of printing back positive electricity become vertical configuration with the line of cut direction.
8. a kind of preparation method who eliminates the solar cell of printing ripple glaze as claimed in claim 1; It is characterized in that; Said sintering comprises the steps: the silicon chip after the printing is sent to sintering furnace; After oven dry under 250-350 ℃ the temperature, chip transmission gets into surface temperature successively under about 800 ℃ atmosphere, carrying out sintering about 500 ℃ earlier.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983227A (en) * | 2012-12-13 | 2013-03-20 | 百力达太阳能股份有限公司 | Method of avoiding poor appearances of solar cells after oxidation |
| CN103715295A (en) * | 2012-09-29 | 2014-04-09 | 江苏天宇光伏科技有限公司 | Production method of small-fabric surface and high-resistivity solar cell |
| CN104409529A (en) * | 2014-11-27 | 2015-03-11 | 浙江昱辉阳光能源江苏有限公司 | Manufacturing process for microstructural textured polycrystalline silicon solar cell |
| CN104779321A (en) * | 2015-03-31 | 2015-07-15 | 中建材浚鑫科技股份有限公司 | Method for increasing percent of pass of saw mark cells |
| CN105006444A (en) * | 2015-07-03 | 2015-10-28 | 陈�光 | Production technology for high-efficiency crystal silicon solar cell piece |
| CN105154983A (en) * | 2015-08-21 | 2015-12-16 | 浙江启鑫新能源科技股份有限公司 | Preparation method of single crystalline silicon solar cell |
| CN107527850A (en) * | 2017-09-19 | 2017-12-29 | 中建材浚鑫科技有限公司 | The feeding device of solar battery back corrosion |
| CN109755346A (en) * | 2018-12-03 | 2019-05-14 | 常州回天新材料有限公司 | A kind of production technology of solar battery sheet |
| CN109873054A (en) * | 2019-04-04 | 2019-06-11 | 乐山新天源太阳能科技有限公司 | Black silicon solar cell production line |
| CN112635590A (en) * | 2020-12-18 | 2021-04-09 | 晶澳太阳能有限公司 | Preparation method of high-efficiency monocrystalline silicon SE-PERC battery piece |
| CN114695572A (en) * | 2020-12-28 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing process of segmented solar cell and segmented solar cell manufactured by manufacturing process |
| CN117457764A (en) * | 2023-10-26 | 2024-01-26 | 江苏创生源智能装备股份有限公司 | Photovoltaic board production facility |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103715295A (en) * | 2012-09-29 | 2014-04-09 | 江苏天宇光伏科技有限公司 | Production method of small-fabric surface and high-resistivity solar cell |
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| CN107527850A (en) * | 2017-09-19 | 2017-12-29 | 中建材浚鑫科技有限公司 | The feeding device of solar battery back corrosion |
| CN109755346A (en) * | 2018-12-03 | 2019-05-14 | 常州回天新材料有限公司 | A kind of production technology of solar battery sheet |
| CN109873054A (en) * | 2019-04-04 | 2019-06-11 | 乐山新天源太阳能科技有限公司 | Black silicon solar cell production line |
| CN112635590A (en) * | 2020-12-18 | 2021-04-09 | 晶澳太阳能有限公司 | Preparation method of high-efficiency monocrystalline silicon SE-PERC battery piece |
| CN114695572A (en) * | 2020-12-28 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing process of segmented solar cell and segmented solar cell manufactured by manufacturing process |
| CN114695572B (en) * | 2020-12-28 | 2024-03-19 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing process of segmented solar cell and segmented solar cell manufactured by manufacturing process |
| CN117457764A (en) * | 2023-10-26 | 2024-01-26 | 江苏创生源智能装备股份有限公司 | Photovoltaic board production facility |
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