CN102427044A - Method for carrying out leak detection to process reaction chamber - Google Patents
Method for carrying out leak detection to process reaction chamber Download PDFInfo
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- CN102427044A CN102427044A CN2011102322754A CN201110232275A CN102427044A CN 102427044 A CN102427044 A CN 102427044A CN 2011102322754 A CN2011102322754 A CN 2011102322754A CN 201110232275 A CN201110232275 A CN 201110232275A CN 102427044 A CN102427044 A CN 102427044A
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Abstract
The invention relates to the semiconductor manufacturing field and especially relates to a method for carrying out leak detection to a process reaction chamber. The invention provides the method for carrying out the leak detection to the process reaction chamber. Before a leading recipe begins, a specific process flow is added. And leak detection is performed to a device before the device enters into the chamber. Therefore, a situation that a reaction gas contacts atmosphere caused by chamber leakage can be avoided. If the reaction gas contacts the atmosphere, a severe particle problem which can cause a silicon chip to be scrapped can be generated. Simultaneously, there is no manpower and machine hour consumption. And a detection frequency can cover a silicon chip risk brought by a capacity.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method that the technological reaction chamber is hunted leak.
Background technology
Processing chamber (process chamber; Abbreviation chamber) for silicon chip specific process environments is provided; Usually operational environment requires that certain vacuum degree is arranged, so require processing chamber to have good sealing effectiveness, leakage can not be arranged; Otherwise reacting gas contact atmosphere causes silicon chip to be scrapped thereby can produce serious particle issues.
The method that the technological reaction chamber is hunted leak that industry is general at present is the artificial manual detection of shutting down, and frequency is generally weekly (seven days) once.Waste when this leak hunting method not only can bring consumption and the machine of human resources, and detect frequency and far can not cover the silicon chip risk that production capacity is brought.
Summary of the invention
The invention discloses a kind of method that the technological reaction chamber is hunted leak, wherein, the preparation flow of wafer carries out in said technological reaction chamber, may further comprise the steps:
Step 1, in wafer is sent into the technological reaction chamber before, the air pressure in the technological reaction chamber is reduced to base pressure, the base pressure value of setting this moment is a standard base pressure value;
Step 2, keeping the air pressure in the said technological reaction chamber is after base pressure continues a period of time, to detect the atmospheric pressure value in the said technological reaction chamber;
Step 3 is if the atmospheric pressure value in the processing chamber begins that then wafer is sent into the technological reaction chamber and prepares less than the standard low pressure value described in the step 2;
If the air pressure described in the step 2 in the processing chamber is more than or equal to said standard low pressure value; And the air pressure after lasting a period of time in the said processing chamber is still more than or equal to said standard low pressure value; Then get into warning system, forbid simultaneously wafer is sent into the technological reaction chamber.
The above-mentioned method that the technological reaction chamber is hunted leak wherein, with reducing to base pressure in the processing chamber, promptly utilizes pump in 30 second time, to extract the gas in the said processing chamber out, so that the air pressure in it is reduced to base pressure in the said step 1.
The above-mentioned method that the technological reaction chamber is hunted leak wherein, keeps said base pressure to continue 60 seconds in the said step 2.
The above-mentioned method that the technological reaction chamber is hunted leak, wherein, the air pressure in the processing chamber described in the said step 3 gets into warning system after surpassing 3 seconds more than or equal to the said standard low pressure value duration.
The above-mentioned method that the technological reaction chamber is hunted leak, wherein, said standard pressure value is 10 millitorrs (millitorr is called for short mTorr).
In sum; Owing to adopted technique scheme, the present invention to propose a kind of method that the technological reaction chamber is hunted leak, through before leading menu begins; Increase specific technological process; Before silicon chip does not enter into processing chamber, promptly it is hunted leak, thereby avoided the gas contact atmosphere because processing chamber gas leakage induces reaction, the serious particle issues that generation can cause silicon chip to be scrapped; Consumption when not having manpower and machine simultaneously, and the detection frequency can cover the silicon chip risk that production capacity is brought.
Description of drawings
The schematic flow sheet of Fig. 1 method that to be the present invention hunt leak to the technological reaction chamber.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
As shown in Figure 1, the invention provides a kind of method that the technological reaction chamber is hunted leak, wherein, may further comprise the steps:
Before leading menu (On Go recipe) beginning, silicon chip is in wafer transfer box (Front Opening Unified Pod is called for short FOUP) simultaneously; When also not getting in the processing chamber (chamber); Carry out step 11, open the air throttle (throttle valve) of processing chamber, in 30 seconds, the process cavity indoor gas is extracted out through pump; Making the air pressure in the processing chamber is base pressure; Concrete base pressure value can be set according to the ability of concrete pump, is generally 8 millitorrs (millitorr is called for short mTorr).Carry out step 12 afterwards, closes the air throttle of processing chamber, and keep a period of time, generally keep 60 seconds after, the atmospheric pressure value that carries out in the processing chamber is measured.Proceed step 13, atmospheric pressure value in the processing chamber of measuring in the step 12 and predetermined standard pressure value are compared, wherein the standard pressure value generally is made as 10 millitorrs.
If the atmospheric pressure value of measuring in the step 12 promptly less than 10 millitorrs, then carry out step 14 less than the standard pressure value, begin leading menu, to carry out device preparing process; If the measured value in the step 12 promptly more than or equal to 10 millitorrs, then carry out step 15, after promptly waiting for a period of time, generally above 3 seconds more than or equal to the standard pressure value; Get into step 16, promptly measure the atmospheric pressure value in the processing chamber once more,, then carry out step 17 and step 18 simultaneously if still more than or equal to the standard pressure value; Step 17 is informed the gas leakage of prepared person's processing chamber for starting warning system; Step 18, makes device produce serious particle issues, thereby causes scrapping of device in order to avoid the reacting gas in the processing chamber contacts with air for stopping making technology.
In sum; Owing to adopted technique scheme, a kind of method that the technological reaction chamber is hunted leak of the present invention is through before leading menu begins; Increase specific technological process; Before silicon chip does not enter into processing chamber, promptly it is hunted leak, thereby avoided the gas contact atmosphere because processing chamber gas leakage induces reaction, the serious particle issues that generation can cause silicon chip to be scrapped; Consumption when not having manpower and machine simultaneously, and the detection frequency can cover the silicon chip risk that production capacity is brought.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (5)
1. method that the technological reaction chamber is hunted leak, wherein, the preparation flow of wafer carries out in said technological reaction chamber, it is characterized in that, may further comprise the steps:
Step 1, in wafer is sent into the technological reaction chamber before, the air pressure in the technological reaction chamber is reduced to base pressure, the low voltage value of setting this moment is the standard low pressure value;
Step 2, keeping the air pressure in the said technological reaction chamber is after base pressure continues a period of time, to detect the atmospheric pressure value in the said technological reaction chamber;
Step 3 is if the atmospheric pressure value in the processing chamber begins that then wafer is sent into the technological reaction chamber and prepares less than the standard low pressure value described in the step 2;
If the air pressure described in the step 2 in the processing chamber is more than or equal to said standard low pressure value; And the air pressure after lasting a period of time in the said processing chamber is still more than or equal to said standard low pressure value; Then get into warning system, stop simultaneously wafer is sent into the technological reaction chamber.
2. the leak hunting method of processing chamber according to claim 1 is characterized in that, with reducing to base pressure in the processing chamber, promptly utilizes pump in 30 second time, to extract the gas in the said processing chamber out, so that the air pressure in it is reduced to base pressure in the said step 1.
3. the leak hunting method of processing chamber according to claim 1 is characterized in that, keeps said base pressure to continue 60 seconds in the said step 2.
4. the leak hunting method of processing chamber according to claim 1 is characterized in that, the air pressure in the processing chamber described in the said step 3 gets into warning system after surpassing 3 seconds more than or equal to the said standard low pressure value duration.
5. according to the leak hunting method of claim 1 or 5 described processing chambers, it is characterized in that said standard pressure value is 10 millitorrs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102322754A CN102427044A (en) | 2011-08-15 | 2011-08-15 | Method for carrying out leak detection to process reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102322754A CN102427044A (en) | 2011-08-15 | 2011-08-15 | Method for carrying out leak detection to process reaction chamber |
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| CN102427044A true CN102427044A (en) | 2012-04-25 |
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| CN2011102322754A Pending CN102427044A (en) | 2011-08-15 | 2011-08-15 | Method for carrying out leak detection to process reaction chamber |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102914412A (en) * | 2012-10-17 | 2013-02-06 | 上海宏力半导体制造有限公司 | Detecting device and detecting method for air tightness of processing cavity |
| CN104949808A (en) * | 2014-03-24 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and system for detecting leakage rate |
| CN107591344A (en) * | 2016-07-06 | 2018-01-16 | 北京北方华创微电子装备有限公司 | Process chamber atmosphere detection method and wafer fab |
| CN107591343A (en) * | 2016-07-06 | 2018-01-16 | 北京北方华创微电子装备有限公司 | Semiconductor technology control method, device and semiconductor manufacturing equipment |
| CN111579172A (en) * | 2020-05-18 | 2020-08-25 | 中国科学院微电子研究所 | Reaction chamber leakage monitoring method and device and semiconductor equipment system |
| CN115261797A (en) * | 2022-08-31 | 2022-11-01 | 北京北方华创微电子装备有限公司 | Method for detecting leakage rate of cavity |
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| US5460689A (en) * | 1994-02-28 | 1995-10-24 | Applied Materials, Inc. | High pressure plasma treatment method and apparatus |
| US5863807A (en) * | 1995-09-20 | 1999-01-26 | Samsung Electronics Co., Ltd. | Manufacturing method of a semiconductor integrated circuit |
| JP2001267383A (en) * | 2000-03-14 | 2001-09-28 | Hitachi Ltd | Manufacturing line and manufacturing method of semiconductor device |
| CN1704744A (en) * | 2004-06-02 | 2005-12-07 | 旺宏电子股份有限公司 | Method for detecting reaction chamber leakage and etching / depositing process |
| CN1847814A (en) * | 2005-12-09 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of measuring leakage rate of reaction cavity in etching machine |
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2011
- 2011-08-15 CN CN2011102322754A patent/CN102427044A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5460689A (en) * | 1994-02-28 | 1995-10-24 | Applied Materials, Inc. | High pressure plasma treatment method and apparatus |
| US5863807A (en) * | 1995-09-20 | 1999-01-26 | Samsung Electronics Co., Ltd. | Manufacturing method of a semiconductor integrated circuit |
| JP2001267383A (en) * | 2000-03-14 | 2001-09-28 | Hitachi Ltd | Manufacturing line and manufacturing method of semiconductor device |
| CN1704744A (en) * | 2004-06-02 | 2005-12-07 | 旺宏电子股份有限公司 | Method for detecting reaction chamber leakage and etching / depositing process |
| CN1847814A (en) * | 2005-12-09 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of measuring leakage rate of reaction cavity in etching machine |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102914412A (en) * | 2012-10-17 | 2013-02-06 | 上海宏力半导体制造有限公司 | Detecting device and detecting method for air tightness of processing cavity |
| CN104949808A (en) * | 2014-03-24 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and system for detecting leakage rate |
| CN104949808B (en) * | 2014-03-24 | 2017-10-13 | 北京北方华创微电子装备有限公司 | A kind of leak rate detection method and system |
| CN107591344A (en) * | 2016-07-06 | 2018-01-16 | 北京北方华创微电子装备有限公司 | Process chamber atmosphere detection method and wafer fab |
| CN107591343A (en) * | 2016-07-06 | 2018-01-16 | 北京北方华创微电子装备有限公司 | Semiconductor technology control method, device and semiconductor manufacturing equipment |
| CN107591344B (en) * | 2016-07-06 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Process chamber atmosphere detection method and wafer processing equipment |
| CN111579172A (en) * | 2020-05-18 | 2020-08-25 | 中国科学院微电子研究所 | Reaction chamber leakage monitoring method and device and semiconductor equipment system |
| CN115261797A (en) * | 2022-08-31 | 2022-11-01 | 北京北方华创微电子装备有限公司 | Method for detecting leakage rate of cavity |
| CN115261797B (en) * | 2022-08-31 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Cavity leak rate detection method |
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Application publication date: 20120425 |