CN102427019A - Method for implementing high-performance metal-oxide-metal by using ultra-low dielectric constant thin film - Google Patents
Method for implementing high-performance metal-oxide-metal by using ultra-low dielectric constant thin film Download PDFInfo
- Publication number
- CN102427019A CN102427019A CN201110163836XA CN201110163836A CN102427019A CN 102427019 A CN102427019 A CN 102427019A CN 201110163836X A CN201110163836X A CN 201110163836XA CN 201110163836 A CN201110163836 A CN 201110163836A CN 102427019 A CN102427019 A CN 102427019A
- Authority
- CN
- China
- Prior art keywords
- metal
- oxide
- dielectric constant
- performance
- photoresistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a method for implementing high-performance metal-oxide-metal by using an ultra-low dielectric constant thin film, in order to solve the problem in the prior art that the metal-oxide-metal capacitor has lower performance because of the adoption of low dielectric constant materials in a metal-oxide-metal area and a metal interconnecting area. The technical effect of the method provided by the invention is realized by carrying out selective UV-irradiation on a low dielectric constant thin film; the low dielectric constant thin film doped with an organic pore-forming agent is partially covered by a light resistor, and then is subjected to UV irradiation, thus the technical effect that the same thin film has different dielectric constants is realized, wherein the area with high dielectric constant is the metal-oxide-metal area, and the high performance of the metal-oxide-metal capacitor can be realized.
Description
Technical field
The present invention relates to a kind of integrated circuit fabrication process, relate in particular to the method that a kind of ultralow dielectric film is realized high-performance metal-oxide-metal.
Background technology
Along with constantly dwindling of cmos device size; The dielectric constant k of the interconnected used dielectric medium of its back segment also constantly reduces, and people also constantly seeking new dielectric material, have developed into FSG, SiOC from initial simple silicon dioxide; Arrived below the 45nm node; People have introduced organic pore former in the growth course of SiOC, and the irradiation through UV light thereafter removes organic pore former and in film, forms micropore, finally reach the purpose of the dielectric constant that reduces film.
Yet along with the reduction of film k value, the capacitor C of integrated identical size just needs bigger area (C ∝ k) in interconnection, and the waste of area has just increased the manufacturing cost of chip.
Summary of the invention
The invention discloses a kind of ultralow dielectric film and realize the method for high-performance metal-oxide-metal, in order to solve the lower problem of metal-oxide-metal capacitive property that metal-oxide-metal is regional and the metal interconnecting wires zone all adopts advanced low-k materials to cause in the prior art.
Above-mentioned purpose of the present invention realizes through following technical scheme:
A kind of ultralow dielectric film is realized the method for high-performance metal-oxide-metal, wherein,
Step a: deposit one first dielectric layer on a substrate, said first dielectric layer is doped with organic pore former in growth course;
Step b: the metal-oxide-metal zone on said first dielectric layer covers photoresistance, and remainder is the metal interconnecting wires zone;
Step c: carry out the purple light irradiation, the organic pore former in the metal-oxide-metal zone that photoresistance covers in first dielectric layer keeps, and all the other regional organic pore former are removed, and forms micropore;
Steps d: remove photoresistance;
Step e: through photoetching be etched in metal interconnecting wires zone and form metal interconnected line trenches, and form the metal-oxide-metal groove in the metal-oxide-metal zone simultaneously;
Step f: in metal interconnection line trenches and metal-oxide-metal groove, carry out the deposit of copper diffusion barrier layer simultaneously, carry out copper plating process and cmp afterwards.
Aforesaid ultralow dielectric film is realized the method for high-performance metal-oxide-metal, and wherein, said first dielectric layer is a low dielectric constant films.
Aforesaid ultralow dielectric film is realized the method for high-performance metal-oxide-metal, wherein, is not volatilized by purple light irradiation back by the pore former in first dielectric layer of photoresistance overlay area, form micropore, thereby its dielectric constant descends.
Aforesaid ultralow dielectric film is realized the method for high-performance metal-oxide-metal, wherein, carries out that purple light is postradiation to be formed low-dielectric constant layer by first dielectric layer of photoresistance overlay area.
Aforesaid ultralow dielectric film is realized the method for high-performance metal-oxide-metal, and wherein, by the purple light irradiation, its organic pore former is retained, and then has the dielectric constant that is higher than the irradiated area by the zone of first dielectric layer of photoresistance covering.
In sum; Owing to adopted technique scheme; Ultralow dielectric film of the present invention realizes that the method for high-performance metal-oxide-metal has solved the lower problem of metal-oxide-metal capacitive property that metal-oxide-metal is regional and the metal interconnecting wires zone all adopts advanced low-k materials to cause in the prior art; Technique effect of the present invention is to realize through low dielectric constant films being carried out selectively UV-irradiation, and the low dielectric constant films part that is doped with organic pore former is covered with photoresistance, carries out the purple light irradiation afterwards; Thereby realize the technique effect of same film differing dielectric constant; Wherein, the zone that dielectric constant is high is metal-oxide layer-metallic region, can realize the high-performance of metal-oxide layer-metal capacitance.
Description of drawings
Fig. 1 is the sketch map behind deposit first dielectric layer of the ultralow dielectric film of the present invention method that realizes high-performance metal-oxide-metal;
Fig. 2 is the sketch map behind the covering photoresistance of the ultralow dielectric film of the present invention method that realizes high-performance metal-oxide-metal;
Fig. 3 is the postradiation sketch map of purple light that ultralow dielectric film of the present invention is realized the method for high-performance metal-oxide-metal;
Fig. 4 is the sketch map behind the removal photoresistance of the ultralow dielectric film of the present invention method that realizes high-performance metal-oxide-metal;
Fig. 5 is the metal interconnected line trenches of formation of the method for ultralow dielectric film realization high-performance metal-oxide-metal of the present invention, the sketch map behind the metal-oxide-metal groove;
Fig. 6 is the sketch map after all technologies of completion of the ultralow dielectric film of the present invention method that realizes high-performance metal-oxide-metal.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
A kind of ultralow dielectric film is realized the method for high-performance metal-oxide-metal, wherein,
Fig. 1 is the sketch map behind deposit first dielectric layer of the ultralow dielectric film of the present invention method that realizes high-performance metal-oxide-metal; See also Fig. 1; Step a: deposit one first dielectric layer 501 on a substrate 101, wherein, first dielectric layer 501 is a low dielectric constant films; Said first dielectric layer 501 is doped with organic pore former 502 in growth course, organic pore former 502 can volatilization form micropore through the purple light irradiation;
Fig. 2 is the sketch map behind the covering photoresistance of the ultralow dielectric film of the present invention method that realizes high-performance metal-oxide-metal; See also Fig. 2; Step b: the metal-oxide-metal zone 301 on said first dielectric layer 501 covers photoresistance 401; Remainder is metal interconnection line zone 201, makes to shine in the technology in subsequent optical, and the part that covers photoresistance 401 can not receive illumination; And the part that does not cover photoresistance 401 receives illumination, thereby can in subsequent technique, realize the technique effect of same film differing dielectric constant;
Fig. 3 is the postradiation sketch map of purple light that ultralow dielectric film of the present invention is realized the method for high-performance metal-oxide-metal; See also Fig. 3; Step c: first dielectric layer 501 is carried out the purple light irradiation; Organic pore former 502 in the metal-oxide-metal zone 301 that photoresistance 401 covers in first dielectric layer 501 keeps; All the other regional organic pore former 502 are removed, and the organic pore former 502 in the metal interconnection line zone 201 that both be not capped is removed, and in metal interconnection line zone 201, forms micropore;
Wherein, do not volatilized by purple light irradiation back, form micropore, thereby its dielectric constant descends by the pore former 502 in first dielectric layer 501 of photoresistance 401 overlay areas.
Carry out that purple light is postradiation not to be descended by first dielectric layer, 501 Jie's dielectric constants of photoresistance 401 overlay areas among the present invention; Be low-dielectric constant layer, and do not shone that its organic pore former 502 is retained by purple light by the zone of first dielectric layer 501 of photoresistance 401 coverings; Its dielectric constant is identical with the purple light pre-irradiation; And then have the dielectric constant that is higher than the irradiated area, through above-mentioned technology, realized having in the same film technique effect in the zone of two differing dielectric constants.
Fig. 4 is the sketch map behind the removal photoresistance of the ultralow dielectric film of the present invention method that realizes high-performance metal-oxide-metal, and see also Fig. 4, steps d: the existence meeting of photoresistance 401 exerts an influence to subsequent technique, so need removal photoresistance 401;
Fig. 5 is the metal interconnected line trenches of formation of the method for ultralow dielectric film realization high-performance metal-oxide-metal of the present invention, the sketch map behind the metal-oxide-metal groove; See also Fig. 5; Step e: through photoetching be etched in metal interconnection line zone 201 and form metal interconnected line trenches, and form metal-oxide-metal grooves 302 in metal-oxide-metal zone 301 simultaneously;
Fig. 6 is the sketch map after all technologies of completion of the ultralow dielectric film of the present invention method that realizes high-performance metal-oxide-metal; See also Fig. 6; Step f: in metal interconnected line trenches 202 and metal-oxide-metal groove 302, carry out the deposit of copper diffusion barrier layer simultaneously, carry out copper plating process and cmp afterwards.
Ultralow dielectric film of the present invention realizes that the method for high-performance metal-oxide-metal has solved the lower problem of metal-oxide-metal capacitive property that metal-oxide-metal is regional and the metal interconnecting wires zone all adopts advanced low-k materials to cause in the prior art; Technique effect of the present invention is to realize through low dielectric constant films being carried out selectively UV-irradiation; Needs are metal-oxide-metal (metal-oxide-metal; Abbreviation MOM) ultraviolet (UV) rayed is blocked in place; Form the film of high-k (high k) value, the place irradiation UV light that other do interconnection forms the film that hangs down k; Form micropore owing to the irradiation of ultraviolet light can make pore former in the low dielectric constant films vapor away, thereby form low k dielectric.Not by the light-struck part of UV, because receiving UV, do not trigger volatilizer, stayed the old place, formed the higher relatively film of k value.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (5)
1. the method for ultralow dielectric film realization high-performance metal-oxide-metal is characterized in that,
Step a: deposit one first dielectric layer on a substrate, said first dielectric layer is doped with organic pore former in growth course;
Step b: the metal-oxide-metal zone on said first dielectric layer covers photoresistance, and remainder is the metal interconnecting wires zone;
Step c: carry out the purple light irradiation, the organic pore former in the metal-oxide-metal zone that photoresistance covers in first dielectric layer keeps, and all the other regional organic pore former are removed, and forms micropore;
Steps d: remove photoresistance;
Step e: through photoetching be etched in metal interconnecting wires zone and form metal interconnected line trenches, and form the metal-oxide-metal groove in the metal-oxide-metal zone simultaneously;
Step f: in metal interconnection line trenches and metal-oxide-metal groove, carry out the deposit of copper diffusion barrier layer simultaneously, carry out copper plating process and cmp afterwards.
2. ultralow dielectric film according to claim 1 is realized the method for high-performance metal-oxide-metal, it is characterized in that said first dielectric layer is a low dielectric constant films.
3. ultralow dielectric film according to claim 1 is realized the method for high-performance metal-oxide-metal; It is characterized in that; Do not volatilized by purple light irradiation back, form micropore, thereby its dielectric constant descends by the pore former in first dielectric layer of photoresistance overlay area.
4. ultralow dielectric film according to claim 1 is realized the method for high-performance metal-oxide-metal, it is characterized in that, carries out that purple light is postradiation to be formed low-dielectric constant layer by first dielectric layer of photoresistance overlay area.
5. ultralow dielectric film according to claim 4 is realized the method for high-performance metal-oxide-metal; It is characterized in that; By the purple light irradiation, its organic pore former is retained, and then has the dielectric constant that is higher than the irradiated area by the zone of first dielectric layer of photoresistance covering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110163836XA CN102427019A (en) | 2011-06-17 | 2011-06-17 | Method for implementing high-performance metal-oxide-metal by using ultra-low dielectric constant thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110163836XA CN102427019A (en) | 2011-06-17 | 2011-06-17 | Method for implementing high-performance metal-oxide-metal by using ultra-low dielectric constant thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102427019A true CN102427019A (en) | 2012-04-25 |
Family
ID=45960984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110163836XA Pending CN102427019A (en) | 2011-06-17 | 2011-06-17 | Method for implementing high-performance metal-oxide-metal by using ultra-low dielectric constant thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102427019A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683175A (en) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | Method for improving dielectric quality of metal-insulator-metal capacitor |
| CN102683174A (en) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | Method for improving metal-insulator-metal capacitor dielectric substance quality |
| EP3270411A1 (en) * | 2015-07-08 | 2018-01-17 | IMEC vzw | Method for producing an integrated circuit device with enhanced mechanical properties |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020030297A1 (en) * | 2000-09-13 | 2002-03-14 | Shipley Company, L.L.C. | Electronic device manufacture |
| CN1832128A (en) * | 2005-02-22 | 2006-09-13 | 国际商业机器公司 | Method of manufacturing interconnection structure and interconnection structure forming by thereof |
| US7208389B1 (en) * | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
| US20080122109A1 (en) * | 2006-07-19 | 2008-05-29 | International Business Machines Corporation | Porous and dense hybrid interconnect structure and method of manufacture |
| US20100096726A1 (en) * | 2008-10-21 | 2010-04-22 | Chin-Sheng Yang | Metal capacitor and method of making the same |
| US20100314763A1 (en) * | 2009-06-11 | 2010-12-16 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system employing low-k dielectrics and method of manufacture thereof |
-
2011
- 2011-06-17 CN CN201110163836XA patent/CN102427019A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020030297A1 (en) * | 2000-09-13 | 2002-03-14 | Shipley Company, L.L.C. | Electronic device manufacture |
| US7208389B1 (en) * | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
| CN1832128A (en) * | 2005-02-22 | 2006-09-13 | 国际商业机器公司 | Method of manufacturing interconnection structure and interconnection structure forming by thereof |
| US20080122109A1 (en) * | 2006-07-19 | 2008-05-29 | International Business Machines Corporation | Porous and dense hybrid interconnect structure and method of manufacture |
| US20100096726A1 (en) * | 2008-10-21 | 2010-04-22 | Chin-Sheng Yang | Metal capacitor and method of making the same |
| US20100314763A1 (en) * | 2009-06-11 | 2010-12-16 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system employing low-k dielectrics and method of manufacture thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683175A (en) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | Method for improving dielectric quality of metal-insulator-metal capacitor |
| CN102683174A (en) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | Method for improving metal-insulator-metal capacitor dielectric substance quality |
| CN102683174B (en) * | 2012-05-04 | 2014-09-03 | 上海华力微电子有限公司 | Method for improving metal-insulator-metal capacitor dielectric substance quality |
| EP3270411A1 (en) * | 2015-07-08 | 2018-01-17 | IMEC vzw | Method for producing an integrated circuit device with enhanced mechanical properties |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10163691B2 (en) | Low-K dielectric interconnect systems | |
| TWI773755B (en) | Metal-insulator-metal capacitor structure and method for forming the same | |
| US10522469B2 (en) | Split rail structures located in adjacent metal layers | |
| US8114734B2 (en) | Metal capacitor and method of making the same | |
| US20140191400A1 (en) | Semiconductor Devices and Methods of Manufacture Thereof | |
| CN1832128A (en) | Method of manufacturing interconnection structure and interconnection structure forming by thereof | |
| US9412651B2 (en) | Air-gap formation in interconnect structures | |
| US8507355B2 (en) | Manufacturing method of a high performance metal-oxide-metal | |
| CN102427019A (en) | Method for implementing high-performance metal-oxide-metal by using ultra-low dielectric constant thin film | |
| US20220310528A1 (en) | Semiconductor structure and fabricating method thereof | |
| CN108074808A (en) | The method for forming semiconductor devices using half-duplex patterning and island | |
| JP2004214649A (en) | Method for forming mimcap (metal, insulator, metal capacitor) and resistor to same level | |
| US20080182379A1 (en) | Semiconductor Wafer With Low-K Dielectric Layer and Process For Fabrication Thereof | |
| CN111081872A (en) | Resistive random access memory and manufacturing method thereof | |
| CN102437102B (en) | Method of and apparatus for active energy assist baking | |
| CN101996861A (en) | Inductor and forming method thereof | |
| DE10348641A1 (en) | Method for reducing parasitic couplings in circuits | |
| CN102487035B (en) | Deposition method of ILD with ultra low k (ULK) and porous structure | |
| CN103779267B (en) | A kind of forming method of semiconductor structure | |
| CN102800622B (en) | Method for forming dielectric layer | |
| CN104183541B (en) | The method repairing medium K value | |
| US20200176403A1 (en) | Electronic device and method of manufacturing the same | |
| CN102709233A (en) | Formation method for copper double-Damask structure and manufacturing method for semi-conductor device | |
| CN100369234C (en) | Method for forming semiconductor device | |
| CN102446893B (en) | Metal-oxide-metal capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120425 |