CN102407483A - High-efficiency nano-precision reducing method for semiconductor wafer - Google Patents
High-efficiency nano-precision reducing method for semiconductor wafer Download PDFInfo
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- CN102407483A CN102407483A CN2011103585348A CN201110358534A CN102407483A CN 102407483 A CN102407483 A CN 102407483A CN 2011103585348 A CN2011103585348 A CN 2011103585348A CN 201110358534 A CN201110358534 A CN 201110358534A CN 102407483 A CN102407483 A CN 102407483A
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Abstract
The invention discloses a high-efficiency nano-precision reducing method for a semiconductor wafer, belonging to the technical field of ultraprecision machining of semiconductor wafers and particularly relating to a nano-precision reducing machining method for the semiconductor wafer. The high-efficiency nano-precision reducing method is characterized by adopting diamond with the average diameter of less than 1mum as an abrasive material and various ceramic raw materials as bonding agents. A grinding liquid is deionized water; and the removal rate of materials in rough reduction is 9-30mu m/min and the removal rate of fine reduction is 3-8mu m/min. During reduction, the rotating speed of a machine shaft is 1800-5000r/min and the rotating speed of workpieces is 60-300r/min. The high-efficiency nano-precision reducing method is suitable for large-diameter semiconductor wafers with the hardness value of below 25GPa and the diameter of below 18 inches. The invention has the advantage of high-efficiency nano-precision reducing machining effect of the semiconductor wafer.
Description
Technical field
The invention belongs to semiconductor crystal wafer Ultraprecision Machining field, particularly the nano-precision attenuate processing method of semiconductor crystal wafer.
Background technology
Along with the fast development of semi-conductor industry, semiconductor industry bound pair semiconductor die diameter of a circle requires increasing, and thickness is more and more thinner, and required precision is increasingly high.This method that just makes the Traditional use polisher lapper carry out major diameter semiconductor crystal wafer attenuate can not satisfy the needs of fast-developing semi-conductor industry.Traditional abrasive polishing method in the initial manufacture stage, adopts free particles to grind and removes bigger surplus thickness as far as possible, and when thickness was reduced to certain value, the finishing method that adopts the minor diameter free abrasive was up to being thinned to given size.This processing method has stayed bigger cut and sub-surface damage layer thickness in the initial grinding stage, reduce these cuts and damage layer by means of follow-up finishing method as far as possible, and reaches the wafer thickness of regulation.Follow-up finishing method, is very easy to produce manufacturing deficiencies such as sliver, fragment, scuffing owing to can not accurately control feeding depth and pressure when semiconductor crystal wafer reaches tens of microns, causes the generation of useless sheet.Because the major diameter semiconductor crystal wafer costs an arm and a leg, and especially is worked into certain thickness, has condensed a large amount of processing cost in early stage of enterprise again,, can cause the profit of enterprise to be had a greatly reduced quality in case produce useless sheet.Enterprise adopts extremely low clearance to come finally to reach the thickness of attenuate in order to reduce this generation of reducing the number of the manufacturing deficiency in thin stage.Though reduced useless sheet rate like this, prolonged process time greatly, cost increases, and also causes the profit of enterprise to glide.Therefore, this traditional free abrasive abrasive polishing method more and more can not satisfy the needs of fast-developing semi-conductor industry development.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor crystal wafer efficient nano precision thining method; Adopt ultra-fine diamond grinding wheel of vitrified bond as grinding tool; Deionized water is as grinding fluid; Realize the purpose of major diameter semiconductor crystal wafer efficient nano precision attenuate; Solve and adopt manufacturing deficiencies such as the incidental sliver of traditional free abrasive grinding and polishing processing method attenuate major diameter semiconductor die bowlder, fragment, scuffing at present, thereby obtain the processing effect of the efficient nano precision attenuate of semiconductor crystal wafer.
Technical scheme of the present invention be adopt average diameter less than the diamond of 1 μ m as abrasive material, adopt a kind of efficient nano precision thining method of multiple ceramic raw material as bond.Grinding fluid is a deionized water, and material is 9-30 μ m/min at the clearance of thick attenuate, and reducing the number of thin clearance is 3-8 μ m/min.The speed of mainshaft is 1800-5000r/min during attenuate, and workpiece rotational frequency is 60-300r/min.The semi-conductive hardness number that is fit to is below 25GPa, and diameter is the major diameter semiconductor crystal wafer below 18 inches.Realized the processing effect of the efficient nano precision attenuate of semiconductor crystal wafer.
The hardness of semiconductor crystal wafer is below 25GPa.What the present invention adopted is ultra-fine diamond grinding wheel of vitrified bond, so the hardness of semiconductor crystal wafer is too big, makes ultra-fine abrasive material come off easily exactly, and the wearing and tearing of emery wheel will be very fast, therefore, needs the hardness of restriction semiconductor crystal wafer workpiece.
The semiconductor die diameter of a circle is below 18 inches.The increase of semiconductor die diameter of a circle can increase much for the difficulty that technology increases; Especially the high planarization of major diameter aspect; Therefore the present invention need limit the diameter of wafer, to bring into play advantage of the present invention owing to provide a kind of efficient nano precision thining method.
Grinding fluid is a deionized water.Owing to when efficient nano precision attenuate, can produce grinding heat, this heat can produce stress; In order to take away these grinding heats fast, adopt deionized water as grinding fluid and cooling fluid, do not add any chemical substance; Processing method for environmental protection; And processing cost compares with respect to chemical mechanical polishing liquid, both environmental protection, and price is cheap again.
Speed of grinding wheel spindle is 1800-5000r/min during attenuate, and workpiece rotational frequency is 60-300r/min.Because the present invention will realize single nanometer materials of changeing and remove; Could effectively avoid sliver, the fragment of traditional diamond-making technique, the manufacturing deficiency of scuffing; Therefore require the minimum 1700r/min that is; And if rotating speed is too high, also can influence the dynamic balancing and the precision of main shaft, therefore maximum speed is defined as 5000r/min.Experience according to the nanometer grinding; Rotating speed of table is less to the crudy influence; Proper speed is very beneficial for the quality that improves the nano-precision attenuate, therefore according to the machined parameters of nanometer grinding attenuate commonly used, selects this interval rotating speed of table better.
The clearance of thick attenuate stage material is 9-30 μ m/min, and the clearance of reducing the number of thin stage material is 3-8 μ m/min.In order to remove more surplus, can adopt the bigger removal amount of 9-30 μ m/min in the stage of beginning.What the present invention adopted is the nanometer method for grinding that main shaft reaches thousands of commentaries on classics; Even remove with this removal amount; Also can accurately control single removal amount of changeing in nanometer scale, also can effectively avoid the manufacturing deficiencies such as sliver, fragment, scuffing of traditional diamond-making technique, and the damage layer on inferior surface also can be controlled at the level below the 100nm; Therefore both efficient, can reach the attenuate processing of nano-precision simultaneously again.When remaining surplus, can adopt the less surplus of 3-8 μ m/min to remove 50 microns left and right sides.According to the processing experience of this nanoscale attenuate, the axis feeding amount of 1-2 μ m/min, therefore the workpiece of burning is easily selected the material removal amount of 3-8 μ m/min.It is several nm that this interval removal amount can accurately be controlled single commentaries on classics removal amount, so attenuate suitable and the major diameter semiconductor crystal wafer, equally also has efficient and nano-precision attenuate characteristic.
The bond of abrasive grinding wheel is a vitrified bond; Contain three kinds or four kinds in carborundum, silicon nitride, tungsten carbide, cubic boron, boron carbide, aluminium oxide, silica, magnesia, cerium oxide, the neodymia, the granularity of granularity and diamond abrasive is complementary; Inhibitor and dispersant are one or both in sodium chloride, magnesium chloride, potassium chloride, sodium nitrate, potassium nitrate, the magnesium nitrate.Adopt the ultra-fine diamond emery wheel be exactly for the thickness of controlling sub-surface damage layer below 100nm, realize that to reach accurate nanoscale ductility territory removes, avoid the generation of manufacturing deficiencies such as fragment, sliver, scuffing.For the ultra-fine diamond of this average diameter less than 1 μ m, the prior resin bond can not provide enough holds.If enough holds are provided, must sacrifice porosity, there is not the emery wheel of good porosity, generally can not process high-quality workpiece, there is not actual processing effect yet.If the employing metallic bond, then emery wheel has been difficult to self-sharpening, and processing effect also is fine.Therefore, select pottery, enough holds can be provided, can have good self-sharpening again as bond.Adopt carborundum, silicon nitride, tungsten carbide, cubic boron, boron carbide as bond; On the one hand enough holds can be provided; On the other hand after the diamond abrasive of wearing and tearing is pulled out; The function of also can short-term taking on abrasive material till new diamond exposes, therefore has the uniformity and the reliability of grinding.Aluminium oxide, silica, magnesia can combine in sintering with above-mentioned pottery well, and hardness slightly, can reduce above-mentioned main aggressiveness grinding behavior of pasting pottery.On the other hand, the cubical contraction of different potteries when sintering is different, can produce better porosity and microstructure.Cerium oxide, neodymia are good lubriation materials, and be very beneficial for the performance that improves emery wheel, can well merge with above-mentioned material simultaneously.Sodium chloride, magnesium chloride, potassium chloride, sodium nitrate, potassium nitrate, magnesium nitrate can suppress the growing up of crystal grain of above-mentioned pottery in sintering, can play the effect of dispersant simultaneously.Because pottery can be difficult to control sintering temperature after surpassing 4 kinds of compositions, therefore selects four kinds of ceramic left and right sides proper.
Effect of the present invention and benefit are to adopt ultra-fine diamond grinding wheel of vitrified bond as efficient nano precision attenuate instrument; Adopt bigger clearance in the thick attenuate stage; Reducing the number of the less clearance of thin stage employing; Thereby realize the effect of efficient nano precision attenuate, effectively avoid manufacturing deficiencies such as incidental major diameter semiconductor die lobe, fragment, scuffing in traditional free abrasive grinding and polishing process.Adopt deionized water as grinding fluid and cooling fluid, be a kind of thining method of environmental protection.The present invention has realized the efficient nano precision attenuate processing method of major diameter semiconductor crystal wafer.
The specific embodiment
Be described in detail the specific embodiment of the present invention below in conjunction with technical scheme.
Adopt #20000 ultra-fine diamond abrasive material, the average diameter of corresponding diamond particles is 520nm, as the grinding particle of emery wheel.With the silicon nitride of #20000, aluminium oxide, silica, lanthana according to weight ratio 50: 30: 19.5: 0.5 ratio is evenly mixed; Add weight ratio then and be 0.8% sodium nitrate as fining agent and dispersant, adopt the fritter of room temperature mechanical compacting growth 18mm, wide 3mm, high 5mm.60 this fritters are put into high temperature sintering furnace carry out sintering; At room temperature evenly be warmed up to the 500-560 degree, be incubated 40-60 minute, and then evenly be warmed up to the 610-640 degree with 4-6 degree per minute with 10 degree per minutes; Evenly be warmed up to the 670-700 degree with 1-2 degree per minute at last; Be incubated 120-150 minute, naturally cool to room temperature, can the ultra-fine vitrified bonded grinding wheel fritter of sintering success.In the narrow groove with even distribution of 56 sintering fritters and 350mm stainless steel edge, adopt high strength bonding glue and stainless steel insert to carry out bonding.By the time after the adhesive curing, can be prepared into emery wheel.The size of this emery wheel is made according to the standard emery wheel skeleton of the VG401 MKII lathe that Japanese Okamoto formula produces, so that be installed to smoothly on the ultraprecise machine mill.Bonding emery wheel is carried out experiment of dynamic balancing, test qualified after, can be installed on the ultraprecise grinding machine.
Adopt 12 inches commercial Si (100) semiconductor crystal wafer to carry out attenuate as workpiece, the thickness of workpiece is 750 μ m.Adopt deionized water grinding fluid the most, the speed of mainshaft is 2350r/min, and rotating speed of table is 200r/min.Adopt vacuum cup with the chemically mechanical polishing face automated exchanged cutter of semiconductor crystal wafer on workbench, the erosional surface at the nano-precision attenuate back side.The material removing rate of beginning is 20 μ m/min, and thick attenuate 30min realizes the removal amount of 600 μ m adopting 5 μ m/min then, and attenuate 16min removes the surplus of 80 μ m again, remains the film of 70 μ m at last.The manufacturing deficiency of sliver, fragment, scuffing does not take place in the process of efficient nano precision attenuate, has effectively avoided the manufacturing deficiency of traditional diamond-making technique.Adopt ZYGO noncontact surface profiler that the thickness of major diameter semiconductor crystal wafer is measured, the thickness of remaining film is 85 μ m.This method can accurately be controlled the gauge of efficient nano precision attenuate, and the 15 μ m that have more are feeding errors of considering that not the wearing and tearing of emery wheel cause.
Claims (1)
1. a semiconductor crystal wafer efficient nano precision thining method adopts ultra-fine diamond grinding wheel of vitrified bond as grinding tool, and deionized water is realized the purpose of major diameter semiconductor crystal wafer efficient nano precision attenuate as grinding fluid, it is characterized in that:
(1) hardness of semiconductor crystal wafer is below 25GPa;
(2) the semiconductor die diameter of a circle is below 18 inches;
(3) grinding fluid is a deionized water;
(4) speed of grinding wheel spindle is 1800-5000r/min during attenuate, and workpiece rotational frequency is 60-300r/min;
(5) clearance of thick attenuate stage material is 9-30 μ m/min, and the clearance of reducing the number of thin stage material is 3-8 μ m/min;
(6) abrasive material of abrasive grinding wheel is a diamond, and the average diameter of particle is less than 1 μ m, and corresponding granularity is greater than #10000;
(7) bond of abrasive grinding wheel is a vitrified bond; Contain three kinds or four kinds in carborundum, silicon nitride, tungsten carbide, cubic boron, boron carbide, aluminium oxide, silica, magnesia, cerium oxide, the neodymia, the granularity of granularity and diamond abrasive is complementary; Inhibitor and dispersant are one or both in sodium chloride, magnesium chloride, potassium chloride, sodium nitrate, potassium nitrate, the magnesium nitrate.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105921744A (en) * | 2016-05-03 | 2016-09-07 | 广东智维立体成型科技有限公司 | Metal printing inhibitor |
| CN106041660A (en) * | 2016-06-09 | 2016-10-26 | 北京工业大学 | Silicon wafer multistep variable parameter rough grinding method |
| CN106584263A (en) * | 2016-12-22 | 2017-04-26 | 清华大学 | Large-scale chip thinning method based on nanometer diamond particles |
| CN108942709A (en) * | 2018-07-11 | 2018-12-07 | 郑州磨料磨具磨削研究所有限公司 | Grinding wheel and preparation method thereof is thinned in a kind of wafer |
| CN108942708A (en) * | 2018-07-11 | 2018-12-07 | 郑州磨料磨具磨削研究所有限公司 | A kind of thinned grinding wheel and preparation method thereof |
| CN111216034A (en) * | 2020-02-26 | 2020-06-02 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0868974A2 (en) * | 1997-04-02 | 1998-10-07 | Nippei Toyama Corporation | Grinding method, surface grinder, work piece support mechanism, and work rest |
| JP2000141207A (en) * | 1998-11-06 | 2000-05-23 | Ibaraki Prefecture | Precision surface working machine |
| US20020052169A1 (en) * | 2000-03-17 | 2002-05-02 | Krishna Vepa | Systems and methods to significantly reduce the grinding marks in surface grinding of semiconductor wafers |
| CN101376228A (en) * | 2008-09-28 | 2009-03-04 | 大连理工大学 | Method for grinding soft crisp functional crystal |
| CN101870091A (en) * | 2010-06-17 | 2010-10-27 | 大连理工大学 | Method for preparing ultra-fine diamond grinding wheel of vitrified bond |
-
2011
- 2011-11-14 CN CN2011103585348A patent/CN102407483A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0868974A2 (en) * | 1997-04-02 | 1998-10-07 | Nippei Toyama Corporation | Grinding method, surface grinder, work piece support mechanism, and work rest |
| JP2000141207A (en) * | 1998-11-06 | 2000-05-23 | Ibaraki Prefecture | Precision surface working machine |
| US20020052169A1 (en) * | 2000-03-17 | 2002-05-02 | Krishna Vepa | Systems and methods to significantly reduce the grinding marks in surface grinding of semiconductor wafers |
| CN101376228A (en) * | 2008-09-28 | 2009-03-04 | 大连理工大学 | Method for grinding soft crisp functional crystal |
| CN101870091A (en) * | 2010-06-17 | 2010-10-27 | 大连理工大学 | Method for preparing ultra-fine diamond grinding wheel of vitrified bond |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105921744A (en) * | 2016-05-03 | 2016-09-07 | 广东智维立体成型科技有限公司 | Metal printing inhibitor |
| CN105921744B (en) * | 2016-05-03 | 2018-05-11 | 广东智维立体成型科技有限公司 | A kind of metallic print inhibitor |
| CN106041660A (en) * | 2016-06-09 | 2016-10-26 | 北京工业大学 | Silicon wafer multistep variable parameter rough grinding method |
| CN106584263A (en) * | 2016-12-22 | 2017-04-26 | 清华大学 | Large-scale chip thinning method based on nanometer diamond particles |
| CN108942709A (en) * | 2018-07-11 | 2018-12-07 | 郑州磨料磨具磨削研究所有限公司 | Grinding wheel and preparation method thereof is thinned in a kind of wafer |
| CN108942708A (en) * | 2018-07-11 | 2018-12-07 | 郑州磨料磨具磨削研究所有限公司 | A kind of thinned grinding wheel and preparation method thereof |
| CN108942709B (en) * | 2018-07-11 | 2019-10-01 | 郑州磨料磨具磨削研究所有限公司 | Grinding wheel and preparation method thereof is thinned in a kind of wafer |
| CN111216034A (en) * | 2020-02-26 | 2020-06-02 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
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