CN102403255B - Mechanical chuck and etching machine - Google Patents

Mechanical chuck and etching machine Download PDF

Info

Publication number
CN102403255B
CN102403255B CN201010284754.6A CN201010284754A CN102403255B CN 102403255 B CN102403255 B CN 102403255B CN 201010284754 A CN201010284754 A CN 201010284754A CN 102403255 B CN102403255 B CN 102403255B
Authority
CN
China
Prior art keywords
male member
chuck
pallet
flow control
arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201010284754.6A
Other languages
Chinese (zh)
Other versions
CN102403255A (en
Inventor
何桢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing North Microelectronics Co Ltd
Original Assignee
Beijing North Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing North Microelectronics Co Ltd filed Critical Beijing North Microelectronics Co Ltd
Priority to CN201010284754.6A priority Critical patent/CN102403255B/en
Publication of CN102403255A publication Critical patent/CN102403255A/en
Application granted granted Critical
Publication of CN102403255B publication Critical patent/CN102403255B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to a mechanical chuck and an etching machine using the mechanical chuck. The mechanical chuck comprises a supporting plate, a clamping plate and a flow control structure, a fluid cavity is arranged between the supporting plates and the clamping plate, and the flow control structure which is used for preventing temperature adjusting fluid from directly flowing out of the fluid cavity is arranged around the supporting plates and the clamping plate and respectively connected with the supporting plates and the clamping plate. Since the flow control structure which is used for preventing temperature adjusting fluid from directly flowing out of the fluid cavity is arranged in the mechanical chuck, the temperature adjusting fluid can completely contact with the back of a wafer on the supporting plate, heat exchanging efficiency and speed are increased while outflow of helium from the fluid cavity into a technical cavity is reduced, and purity degree of the technical cavity where the mechanical chuck is positioned can be improved.

Description

Mechanical chuck and etching machine
Technical field
The present invention relates to semiconductor fabrication, particularly a kind of mechanical chuck and etching machine.
Background technology
In the semiconductor technology processing procedures such as integrated circuit manufacture, LED manufacture, as techniques such as etching, sputter and chemical vapour deposition (CVD)s, all rely on mechanical chuck to fix and supporting wafers.Mechanical chuck, except fixed support wafer, prevents that it from occurring outside displacement and vibration in technical process, and it is also a critical function of mechanical chuck that the temperature of wafer is controlled.Mechanical chuck is arranged in processing chamber, not contaminated to guarantee the surface of wafer.
Fig. 1 is the structural representation of existing mechanical chuck.As shown in Figure 1, existing machinery chuck comprises pallet 101, chuck 102 and pressure ring 108, wherein, between pallet 101 and chuck 102, be provided with fluid cavity 109, pressure ring 108 is positioned at the top of pallet 101 and along its circumference setting, pallet 101 can be by being arranged at its circumference pad 106 support wafers 107 so that form slight void 111 between pallet 101 and wafer 107, and wafer 107 can be stabilized in pallet 101 by pressure ring 108, on chuck 102, be provided with the conduction hole 112 that at least one is connected with slight void 111; And be provided with the through hole 103 being connected with fluid cavity 109 on chuck 102, temperature adjustable fluid (as helium) can pass in fluid cavity 109 by this through hole 103, and enter slight void 111 by conduction hole 112.
When using existing mechanical chuck, 103 fluid cavitys 109 that enter between pallet 101 and chuck 102 that temperature adjustable fluid arranges from chuck 102, the lower surface that temperature adjustable fluid arrives wafer 107 through the conduction hole 112 on pallet 101 is to carry out heat exchange with wafer 107; But due to differential pressure action, most of temperature adjustable fluid flows out fluid cavity 109 by being parallel to the path straight of pallet 101 lower surfaces and chuck 102 upper surfaces, make quite most of helium not participate in heat exchange and just leave fluid cavity 109 and enter processing chamber, cause mechanical chuck poor to the temperature control effect of wafer 107; Further, although pass into excessive temperature adjustable fluid, can increase the temperature adjustable fluid amount that participates in heat exchange, the thermoregulation effect of improvement to wafer 107, but this processing mode will cause more temperature adjustable fluid to enter processing chamber, not only caused the serious waste of temperature adjustable fluid, also polluted wafer 107 surface, damaged the processing procedure quality of wafer 107.
Summary of the invention
The object of the present embodiment is to provide a kind of mechanical chuck and etching machine, for solving prior art mechanical chuck, the temperature controlled weak effect of wafer and helium is wasted to serious technical problem.
For addressing the above problem, the present embodiment provides a kind of mechanical chuck, comprise pallet, chuck and pressure ring, between this pallet and chuck, be provided with fluid cavity, described pressure ring is positioned at the top of described pallet and along the setting of described pallet circumference, also comprises for stoping temperature adjustable fluid to flow out straight the flow control structure of described fluid cavity;
Described flow control structure ring is around the circumference of described pallet and described chuck and arrange, and is connected with described chuck with described pallet respectively.
Wherein, described flow control structure comprises two male members that are crisscross arranged respectively on described pallet and chuck, the height sum of described two male members is greater than the distance between described pallet and chuck, and the flow control road that described two male members form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
Wherein, described flow control structure comprises suitable male member and groove, and the height of described male member is greater than the distance between described pallet and chuck; Described male member is arranged on described pallet, and described groove is arranged on described chuck, and the flow control road that described male member and groove form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
Wherein, described flow control structure comprises suitable male member and groove, and the height of described male member is greater than the distance between described pallet and chuck; Described groove is arranged on described pallet, and described male member is arranged on described chuck, and the flow control road that described male member and groove form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
Wherein, described flow control structure comprises suitable male member and right-angle notch, and the height of described male member is greater than the distance between described pallet and chuck; Described male member is arranged on described pallet, and described right-angle notch is arranged on described chuck, and the flow control road that described male member and right-angle notch form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
Wherein, described flow control structure comprises suitable male member and right-angle notch, and the height of described male member is greater than the distance between described pallet and chuck; Described right-angle notch is arranged on described pallet, and described male member is arranged on described chuck, and the flow control road that described male member and right-angle notch form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
Wherein, described flow control structure comprises suitable arc male member and arc notch, and the height of described arc male member is greater than the distance between described pallet and chuck; Described arc male member is arranged on described pallet, and described arc notch is arranged on described chuck, and the flow control road between described arc male member and arc notch stops described temperature adjustable fluid to flow out straight described fluid cavity.
Wherein, described flow control structure comprises suitable arc male member and arc notch, and the height of described arc male member is greater than the distance between described pallet and chuck; Described arc notch is arranged on described pallet, and described arc male member is arranged on described chuck, and the flow control road between described arc male member and arc notch stops described temperature adjustable fluid to flow out straight described fluid cavity.
Wherein, described flow control structure comprises two mutually nested arcuate structures, and the flow control road that described in two, arcuate structure forms is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
Wherein, described arcuate structure is C shape.
Wherein, described male member and groove are respectively suitable arc male member and arc groove.
Wherein, described arc male member and arc groove are respectively the arc male member of C shape and the arc groove of C shape.
The present embodiment also provides a kind of etching machine, wherein, comprises the mechanical chuck described in processing chamber, vacuum pump, top electrode, bottom electrode and above-mentioned any one, and described mechanical chuck is arranged in described processing chamber for carrying wafer to be processed.
Mechanical chuck provided by the present invention and etching machine, by set for stoping temperature adjustable fluid to flow out straight the flow control structure of described fluid cavity in mechanical chuck, temperature adjustable fluid can fully be contacted with the chip back surface being positioned on pallet, to improve efficiency and the speed of heat exchange, and reduced the discharge that helium flows to processing chamber from fluid cavity, be conducive to improve the degree of purity of the processing chamber at mechanical chuck place.
accompanying drawing explanation
Fig. 1 is the structural representation of existing mechanical chuck;
Fig. 2 is the structural representation of mechanical chuck the first specific embodiment provided by the invention;
Fig. 3 is the structural representation of mechanical chuck the second specific embodiment provided by the invention;
Fig. 4 is the structural representation of mechanical chuck provided by the invention the 3rd specific embodiment;
Fig. 5 is the structural representation of mechanical chuck provided by the invention the 4th specific embodiment;
Fig. 6 is the structural representation of mechanical chuck provided by the invention the 5th specific embodiment;
Fig. 7 is the structural representation of mechanical chuck provided by the invention the 6th specific embodiment;
Fig. 8 is the structural representation of mechanical chuck provided by the invention the 7th specific embodiment;
Fig. 9 is the structural representation of mechanical chuck provided by the invention the 8th specific embodiment;
Figure 10 is the structural representation of mechanical chuck provided by the invention the 9th specific embodiment;
Figure 11 is the structural representation of etching machine specific embodiment provided by the invention.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is done further and described in detail.
Fig. 2 is the structural representation of mechanical chuck the first specific embodiment provided by the invention.As shown in Figure 2, the present embodiment mechanical chuck comprises pallet 101, chuck 102 and flow control structure, in actual applications, it is circular that pallet 101 and chuck 102 are generally, by the through hole 103 on chuck 102, the helium of temperature adjustment is sent to the fluid cavity 109 between pallet 101 and chuck 102, the assembly of flow control structure is separately positioned on fixed tray 101 and chuck 102, and around the circumference of pallet 101 and chuck 102, direction while flowing out fluid cavity 109 for changing helium, thus helium effluent fluid chamber 109 straight stoped, in the present embodiment, flow control structure comprises two male members 104, male member 104 is separately fixed on pallet 101 and chuck 102, and around pallet 101 and chuck 102 circumference, position between two male members 104 is crisscross arranged, on pallet 101, male member 104 is arranged on the outside of the male member 104 on chuck 102, wherein, the height of the male member 104 on pallet 101 is H, male member 104 on 102 is highly H, the height sum of two male members 104 is greater than the height of the fluid cavity 109 between pallet 101 or chuck 102, space between two male members 104 is flow control road 105, flow control road 105 has changed the outflow direction of helium from fluid cavity 109, stop helium being parallel in the surperficial footpath straight path of pallet 101 or chuck 102 effluent fluid chamber 109 straight, helium can fully be contacted with wafer 107 back sides that are placed on pallet 101, avoid helium to flow out fast from fluid cavity 109, to improve the efficiency of heat exchange, realize its object to wafer 107 effective temperature controls, and reduced helium and from fluid cavity 109, entered the flow of processing chamber, be conducive to improve the degree of purity of the processing chamber at mechanical chuck place.
Fig. 3 is the structural representation of mechanical chuck the second specific embodiment provided by the invention.As shown in Figure 3, different from the structure of the mechanical chuck shown in Fig. 2, in the present embodiment, the male member on pallet 101 104 is arranged on to the inner side of the male member 104 on chuck 102, the height sum of two male members 104 is greater than the height of fluid cavity 109.
Fig. 4 is the structural representation of mechanical chuck provided by the invention the 3rd specific embodiment.Different from Fig. 2 or Fig. 3 is, flow control structure in the present embodiment comprises two mutually nested arcuate structures 110, the flow control road 105 that two arcuate structures 110 form stops temperature adjustable fluid helium effluent fluid chamber 109 straight, arcuate structure 110 can be C shape, also can be other shaped form, as waveform or more complicated winding curve etc.
Fig. 5 is the structural representation of mechanical chuck provided by the invention the 4th specific embodiment.As shown in Figure 5, male member 104 is fixed on pallet 101, the height H of male member 104 is greater than the height of fluid cavity 109, on chuck 102 circumference, be provided with the right-angle notch suitable with male member 104, male member 104 and right-angle notch form flow control structure, space between the recessed and male member 104 of square is flow control road 105, in actual applications, also can be on male member 104 fixing chuck 102, on pallet 101 circumference, be provided with the right-angle notch suitable with male member 104, conventionally the width L in flow control road 105 be arranged on to 0.1mm magnitude.Flow control road 105 can stop helium being parallel in the surperficial footpath straight path of pallet 101 or chuck 102 effluent fluid chamber 109 straight, to avoid helium along flowing out fast in fluid cavity 109, and then can make helium fully to contact with wafer 107 back sides, realize its object to wafer 107 effective temperature controls, and reduced helium and from fluid cavity 109, flow to the discharge of processing chamber, be conducive to improve the degree of purity of the processing chamber at mechanical chuck place.
Fig. 6 is the structural representation of mechanical chuck provided by the invention the 5th specific embodiment.As shown in Figure 6, different from Fig. 5 is, flow control structure in the present embodiment is comprised of arc male member 104 and arc notch, for example can be formed by C shape male member 104 and C v notch v, C shape male member 104 is arranged on the circumference of pallet 101, C v notch v is arranged on the circumference of chuck 102, to extend the length in the flow control road 105 of shape male member 104 and C v notch v formation, further stop helium being parallel in the surperficial footpath straight path of pallet 101 or chuck 102 effluent fluid chamber 109 straight, in actual applications, also C shape male member 104 can be arranged on the circumference of chuck 102, C v notch v is arranged on the circumference of pallet 101.
Fig. 7 is the structural representation of mechanical chuck provided by the invention the 6th specific embodiment.As shown in Figure 7, in the present embodiment mechanical chuck, male member 104 is fixed on pallet 101, on chuck 102, be provided with the groove suitable with male member 104, this groove forms by being fixed on lip-deep two male members 104 of chuck 102, and the male member 104 on pallet 101 and the height sum of the male member 104 on chuck 102 are less than the height of fluid cavity 109, and male member 104 is nested in groove, male member 104 and groove form flow control structure, and the space between groove and male member 104 is flow control road 105; In actual applications, also groove can be arranged on pallet 101, suitable with it male member 104 is arranged on chuck 102.
Fig. 8 is the structural representation of mechanical chuck provided by the invention the 7th specific embodiment.As shown in Figure 8, different from Fig. 7, on the surface of the recessed chuck 102 of groove of the flow control structure of the present embodiment mechanical chuck, male member 104 and groove form flow control structure, the height of male member 104 is greater than the height of fluid cavity 109, and the space between groove and male member 104 is flow control road 105.
Fig. 9 is the structural representation of mechanical chuck provided by the invention the 8th specific embodiment.As shown in Figure 9, mechanical chuck in the present embodiment, different from Fig. 8 is, male member 104 is arranged on chuck 102, the surface of the recessed pallet 101 of groove, groove and male member 104 form flow control structure, and the height of male member 104 is greater than the height of fluid cavity 109, male member 104 is nested in groove, and the space between groove and male member 104 is flow control road 105.
Figure 10 is the structural representation of mechanical chuck provided by the invention the 9th specific embodiment.In actual applications, as shown in figure 10, mechanical chuck in the present embodiment, with Fig. 7, what Fig. 8 or Fig. 9 were different is, male member 104 in the present embodiment is arc male member, groove is corresponding arc groove, male member 104 is nested in groove, for example can be formed by C shape male member 104 and C connected in star, C shape male member 104 is arranged on pallet 101, C connected in star is arranged on the circumference of chuck 102, to extend the length in the flow control road 105 of C shape male member 104 and C connected in star composition, can further stop helium being parallel in the surperficial footpath straight path of pallet 101 or chuck 102 effluent fluid chamber 109 straight, in actual applications, also C shape male member 104 can be arranged on chuck 102, C connected in star be arranged on the circumference of pallet 101.
In actual applications, can also be in fluid cavity set temperature meter, barometer and flowmeter, obtain in real time temperature, pressure and the flow of helium, the parameters such as temperature, pressure and flow that are conducive to according to helium are adjusted its flow etc., to adjust more accurately and to control the temperature of wafer.
The mechanical chuck that the various embodiments described above provide, set for stoping temperature adjustable fluid to flow out straight the flow control structure of described fluid cavity by it, temperature adjustable fluid can fully be contacted with the chip back surface being positioned on pallet, to improve efficiency and the speed of heat exchange, and reduced the discharge that helium flows to processing chamber from fluid cavity, be conducive to improve the degree of purity of the processing chamber at mechanical chuck place.
Figure 11 is the structural representation of etching machine specific embodiment provided by the invention.As shown in figure 11, the present embodiment etching machine comprises processing chamber 50, vacuum pump 60, top electrode and mechanical chuck, described mechanical chuck can adopt any one structure of above-mentioned mechanical chuck embodiment, mechanical chuck is arranged in processing chamber 50 for carrying wafer to be processed, and treat processed wafer and carry out temperature control, in the present embodiment, mechanical chuck adopts the structure shown in Fig. 3, in the process of etched wafer 107, the gas that vacuum pump 60 extracts in processing chamber 50, to keep the vacuum degree of processing chamber 50, avoid wafer 107 grades to be polluted by foreign gas.
In the present embodiment, by the flow control road in the flow control structure of mechanical chuck, stop helium effluent fluid chamber straight, helium can fully be contacted with the wafer being placed on pallet, to improve efficiency and the speed of heat exchange, the object of realization to wafer temperature control, and reduced helium and from fluid cavity, enter the flow of processing chamber, be conducive to improve the degree of purity of the processing chamber at mechanical chuck place, avoid wafer surface contaminated.
Be understandable that, above execution mode is only used to illustrate the original and illustrative embodiments that adopts of the present invention, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.

Claims (13)

1. a mechanical chuck, comprise pallet, chuck, pressure ring and for the pad of support wafer to be processed, between this pallet and chuck, be provided with fluid cavity, described pressure ring is positioned at the top of described pallet and along the setting of described pallet circumference, described pad is placed in the top of described pallet and is positioned at the inner side of described pressure ring, so that when support wafer to be processed, between described pallet and wafer to be processed, form slight void, and in described pallet, be provided with the conduction hole that is communicated with described slight void and fluid cavity, it is characterized in that, also comprise for stoping temperature adjustable fluid to flow out straight the flow control structure of described fluid cavity,
Described flow control structure ring is around the circumference of described pallet and described chuck and arrange, and is connected with described chuck with described pallet respectively.
2. mechanical chuck according to claim 1, it is characterized in that, described flow control structure comprises two male members that are crisscross arranged respectively on described pallet and chuck, the height sum of described two male members is greater than the distance between described pallet and chuck, and the flow control road that described two male members form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
3. mechanical chuck according to claim 1, is characterized in that, described flow control structure comprises suitable male member and groove, and the height of described male member is greater than the distance between described pallet and chuck; Described male member is arranged on described pallet, and described groove is arranged on described chuck, and the flow control road that described male member and groove form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
4. mechanical chuck according to claim 1, is characterized in that, described flow control structure comprises suitable male member and groove, and the height of described male member is greater than the distance between described pallet and chuck; Described groove is arranged on described pallet, and described male member is arranged on described chuck, and the flow control road that described male member and groove form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
5. mechanical chuck according to claim 1, is characterized in that, described flow control structure comprises suitable male member and right-angle notch, and the height of described male member is greater than the distance between described pallet and chuck; Described male member is arranged on described pallet, and described right-angle notch is arranged on described chuck, and the flow control road that described male member and right-angle notch form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
6. mechanical chuck according to claim 1, is characterized in that, described flow control structure comprises suitable male member and right-angle notch, and the height of described male member is greater than the distance between described pallet and chuck; Described right-angle notch is arranged on described pallet, and described male member is arranged on described chuck, and the flow control road that described male member and right-angle notch form is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
7. mechanical chuck according to claim 1, is characterized in that, described flow control structure comprises suitable arc male member and arc notch, and the height of described arc male member is greater than the distance between described pallet and chuck; Described arc male member is arranged on described pallet, and described arc notch is arranged on described chuck, and the flow control road between described arc male member and arc notch stops described temperature adjustable fluid to flow out straight described fluid cavity.
8. mechanical chuck according to claim 1, is characterized in that, described flow control structure comprises suitable arc male member and arc notch, and the height of described arc male member is greater than the distance between described pallet and chuck; Described arc notch is arranged on described pallet, and described arc male member is arranged on described chuck, and the flow control road between described arc male member and arc notch stops described temperature adjustable fluid to flow out straight described fluid cavity.
9. mechanical chuck according to claim 1, is characterized in that, described flow control structure comprises two mutually nested arcuate structures, and the flow control road that described in two, arcuate structure forms is for stoping described temperature adjustable fluid to flow out straight described fluid cavity.
10. mechanical chuck according to claim 9, is characterized in that, described arcuate structure is C shape.
11. according to the mechanical chuck described in claim 3 or 4, it is characterized in that, described male member and groove are respectively suitable arc male member and arc groove.
12. mechanical chuck according to claim 11, is characterized in that, described arc male member and arc groove are respectively the arc male member of C shape and the arc groove of C shape.
13. 1 kinds of etching machines, is characterized in that comprising the mechanical chuck described in processing chamber, vacuum pump, top electrode and claim 1-12 any one, and described mechanical chuck is arranged in described processing chamber for carrying wafer to be processed.
CN201010284754.6A 2010-09-15 2010-09-15 Mechanical chuck and etching machine Active CN102403255B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201010284754.6A CN102403255B (en) 2010-09-15 2010-09-15 Mechanical chuck and etching machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010284754.6A CN102403255B (en) 2010-09-15 2010-09-15 Mechanical chuck and etching machine

Publications (2)

Publication Number Publication Date
CN102403255A CN102403255A (en) 2012-04-04
CN102403255B true CN102403255B (en) 2014-07-16

Family

ID=45885328

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010284754.6A Active CN102403255B (en) 2010-09-15 2010-09-15 Mechanical chuck and etching machine

Country Status (1)

Country Link
CN (1) CN102403255B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767568B (en) * 2018-07-26 2022-05-27 北京北方华创微电子装备有限公司 Pressure regulating assembly, lower electrode device, process chamber and semiconductor processing equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883778A (en) * 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010054043A (en) * 1999-12-03 2001-07-02 박종섭 Wafer chuck stage
US7607647B2 (en) * 2007-03-20 2009-10-27 Kla-Tencor Technologies Corporation Stabilizing a substrate using a vacuum preload air bearing chuck
JP5331580B2 (en) * 2008-07-02 2013-10-30 日本碍子株式会社 Wafer mounting apparatus and parts used therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883778A (en) * 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control

Also Published As

Publication number Publication date
CN102403255A (en) 2012-04-04

Similar Documents

Publication Publication Date Title
JP2017216441A5 (en)
KR102424818B1 (en) Plasma processing apparatus and focus ring
US20150030766A1 (en) Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline
JP6126310B2 (en) Epitaxial reactor
CN105489527A (en) Bearing device and semiconductor processing equipment
CN102403255B (en) Mechanical chuck and etching machine
US10199225B2 (en) Substrate processing apparatus
CN102446738A (en) Plasma etching device
CN103337506A (en) Preparation technology of silicon epitaxial wafer for CCD device
CN105624634B (en) Reaction chamber and semiconductor processing equipment
CN109962030B (en) Electrostatic chuck
US20220319898A1 (en) Electrostatic chuck
JP4320574B2 (en) Epitaxial growth equipment
CN110554572B (en) Suction cup
CN103811393A (en) Electrostatic chuck for carrying wafer and plasma processing equipment
CN102184840B (en) Method for manufacturing dual-layer quartz cylinder
CN110767568B (en) Pressure regulating assembly, lower electrode device, process chamber and semiconductor processing equipment
US11145532B2 (en) Electrostatic chuck
CN103910325A (en) High-reliability micro-electromechanical system (MEMS) packaging structure and method capable of achieving accurate control of bonding gap
CN203013674U (en) Plasma etching processing apparatus
CN102856241B (en) Static chuck and plasma processing equipment
CN102320603B (en) Heat-conducting oil silicon-core jacketed-type small bell cover for polycrystalline-silicon silane-decomposing furnace
TWI747104B (en) Substrate mounting table and plasma processing equipment capable of improving temperature control accuracy
KR20070032467A (en) Etch equipment for semiconductor device manufacture
JP6573216B2 (en) Vapor growth apparatus and epitaxial wafer manufacturing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No.

Patentee after: Beijing North China microelectronics equipment Co Ltd

Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South

Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing