CN102339920A

CN102339920A - Light-emitting component

Info

Publication number: CN102339920A
Application number: CN2010102345605A
Authority: CN
Inventors: 张利铭; 沈建赋; 柯淙凯
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2010-07-20
Filing date: 2010-07-20
Publication date: 2012-02-01
Anticipated expiration: 2030-07-20
Also published as: CN102339920B

Abstract

The invention discloses a light-emitting component. The light-emitting component comprises a base plate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a metal electrode, wherein at least one concave part is formed on the surface of the second semiconductor layer; the metal electrode is formed on the second semiconductor layer and is provided with at least one first extending electrode; and the first extending electrodes are formed along with the surface of the concave part.

Description

Light-emitting component

Technical field

The present invention relates to a kind of light-emitting component, especially relate to a kind of light-emitting component with the electrode structure that can promote electrical property efficiency.

Background technology

At present light-emitting diode generally has the not good problem of electric current diffusion,, is formed with a p type semiconductor layer on the luminescent layer, and can be provided with an electronic pads on the p type semiconductor layer to import electric current with regard to the last light-emitting diode with regard to the p type semiconductor layer.Mostly the mode of promoting the electric current diffusion at present is on the p type semiconductor layer, to form one is the current-diffusion layer of material with metal oxide or gallium phosphide for example; Electronic pads is set again, and the extension electrode that further can be again extends one or more by electronic pads is more to promote the distribution of electric current on current-diffusion layer.

Yet extension electrode is set causes bad influence for the bright dipping of light-emitting diode.Because extension electrode is a metal material, can produce the phenomenon of extinction or shading.Otherwise, if the contact area of extension electrode and semiconductor layer is not enough, voltage (forward voltage, V forward _f) will raise, and make the usefulness of light-emitting diode reduce.

Above light-emitting diode can further combine a carrier (sub-mount) and form a light-emitting device, said light-emitting device comprise one have at least one circuit inferior carrier; At least one scolder (solder) is positioned on above-mentioned carrier, is fixed in above-mentioned light-emitting diode bonding on time carrier and the substrate of light-emitting diode is electrically connected with circuit formation on time carrier through this scolder; And an electric connection structure is with the electronic pads of electrical connection light-emitting diode and the circuit on time carrier; Wherein, above-mentioned inferior carrier can be that lead frame (lead frame) or large scale are inlayed substrate (mounting substrate), with the circuit planning that makes things convenient for light-emitting device and improve its radiating effect.

Summary of the invention

The object of the present invention is to provide a kind of light-emitting component, but its electrode structure that has scattered current and promote light extraction efficiency.

Light-emitting component of the present invention comprises: a substrate; One first semiconductor layer is formed on the substrate; One luminescent layer is formed on first semiconductor layer; One second semiconductor layer is formed on the luminescent layer, and wherein second semiconductor layer surface is formed with at least one recess; And a metal electrode, be formed on second semiconductor layer and have a main electrode, and at least one first extension electrode of extending by main electrode, wherein first extension electrode surface of complying with recess forms.

According to one embodiment of the invention, recess can comprise a groove or many parallel grooves arranged side by side, and each groove has a bottom side and two side.

According to one embodiment of the invention, first extension electrode and said groove intersect vertically.

According to one embodiment of the invention, first extension electrode can extend second extension electrode again on the sidewall of said groove.

According to one embodiment of the invention, recess can comprise the pothole that one or more forms at interval, and each pothole has a bottom side and is the sidewall around shape.

Description of drawings

Figure 1A is the first embodiment side-looking generalized section of light-emitting component of the present invention;

Figure 1B and Fig. 1 C are respectively the top view of the different recess forms of first embodiment of light-emitting component of the present invention;

Fig. 2 A and Fig. 2 B are the second embodiment side-looking generalized section of light-emitting component of the present invention;

Fig. 3 is the 3rd embodiment side-looking generalized section of light-emitting component of the present invention;

Fig. 4 A and Fig. 4 B are the 4th embodiment top view of light-emitting component of the present invention; And

Fig. 5 is the 5th embodiment side-looking generalized section of light-emitting component of the present invention.

The main element symbol description

Light-emitting component 100,200,300,400,500;

Substrate 102,202,302;

First semiconductor layer 104,204,304;

Luminescent layer 106,206,306;

Second semiconductor layer 108,208,308,408;

Recess 101,201,301,401,501;

Metal electrode 105,205,305,405,505,112,212,312,412,512;

Main electrode 110,210,310,410,510;

Bottom side

101a, 201a, 301a, 401a;

Sidewall 101b, 201b, 301b, 401b;

First extension electrode 109,209,309,409,509;

Second extension electrode 411;

Transparency conducting layer 203

Embodiment

See also Figure 1A, the first embodiment of the present invention discloses a light-emitting component 100, comprising: a substrate 102; One first semiconductor layer 104 is formed on the substrate 102, and is formed with a metal electrode 112 on the exposed surface of first semiconductor layer 104; One luminescent layer 106 is formed on first semiconductor layer 104; One second semiconductor layer 108 is formed on the luminescent layer 106, and second semiconductor layer, 108 surfaces are formed with a recess 101; An and metal electrode 105; Be formed on second semiconductor layer 108; Comprise a main electrode 110 and one first extension electrode 109 that extends by main electrode 110 at least; Wherein first extension electrode 109 is complied with the surface formation of recess 101, has increased the area that first extension electrode 109 contacts with second semiconductor layer 108.

First semiconductor layer 104, second semiconductor 108, and its material of luminous lamination of being constituted of luminescent layer 106 comprise at least a element and be selected from the group that is constituted by aluminium (Al), gallium (Ga), indium (In), nitrogen (N), phosphorus (P) and arsenic (As), for example be the semiconducting compound of AlGaInP, AlN, GaN, AlGaN, InGaN or AlInGaN etc.And the structure of said luminous lamination can be single heterojunction structure (singleheterostructure; SH), double-heterostructure (double heterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; DDH) or multi-layer quantum well (multi-quantum well; MQW).

Recess 101 has a bottom side 101a and sidewall 101b, and wherein the angle of bottom side 101a and sidewall 101b is θ, 0 °＜θ＜180 °.Be compared to the semiconductor layer for flat configuration, present embodiment has increased sidewall 101b and the area that first extension electrode 109 is contacted, and helps to reduce the forward voltage of light-emitting component 100.In addition, because the contact area that is increased on sidewall 101b, does not therefore increase too many shading area.Wherein preferably make sidewall 101b be vertical or near perpendicular to bottom side 101a, can further reduce the shading area.Shown in Figure 1B, recess 101 can be a groove, have one be strip bottom side 101a and two opposite side walls 101b.In the present embodiment, the recess 101 that first extension electrode 109 is preferably with the groove form intersects vertically, to reduce the shading area further.Shown in Fig. 1 C, recess 101 can be a pothole, has a bottom side 101a and is the sidewall 101b around shape.

See also Fig. 2 A, the second embodiment of the present invention discloses a light-emitting component 200, comprising: a substrate 202; One first semiconductor layer 204 is formed on the substrate 202, and is formed with a metal electrode 212 on the exposed surface of first semiconductor layer 204; One luminescent layer 206 is formed on first semiconductor layer 204; One second semiconductor layer 208 is formed on the luminescent layer 206 and the surface is formed with a recess 201; An and metal electrode 205; Be formed on second semiconductor layer 208 and have a main electrode 210 and reach by its at least one first extension electrode 209 that extends; Wherein first extension electrode 209 is complied with the surface formation of recess 201, therefore increases the area of first extension electrode, 209 contacts, second semiconductor layer 208.Ground identical with first embodiment when recess 201 is a groove, has the bottom side 201a that is strip and relative two side 201b; When recess 201 is a pothole, has a bottom side 201a and be sidewall 201b around shape.

Present embodiment is similar in appearance to first embodiment, difference be present embodiment second semiconductor layer 208 and

main electrode

210, and 209 of first extension electrodes be formed with in order to promote a transparency conducting layer 203 of electric current diffusion.The material of transparency conducting layer 203 comprises metal oxide such as tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide aluminum (AZO), zinc-tin oxide (ZTO), zinc oxide (ZnO); Or semiconducting compound such as arsenic gallium aluminium (AlGaAs), gallium phosphide (, GaP) or other can promote the semiconducting compound of electric current diffusion.In addition, shown in Fig. 2 B, transparency conducting layer 203 also can be formed on second semiconductor layer 208 except that recess 201, so that first extension electrode 209 can directly contact with the bottom side 201a and the sidewall 201b of recess 201.

See also Fig. 3, the light-emitting component 300 of third embodiment of the invention comprises: a substrate 302; One first semiconductor layer 304 is formed on the substrate 302, and is formed with a metal electrode 312 on the exposed surface of first semiconductor layer 304; One luminescent layer 306 is formed on first semiconductor layer 304; One second semiconductor layer 308 is formed on the luminescent layer 306, and the surface of second semiconductor layer 308 is formed with a recess 301; An and metal electrode 305; Be formed on second semiconductor layer 308; Have a main electrode 310, and at least one first extension electrode 309 of extending by main electrode 310; Wherein first extension electrode 309 is complied with the surface formation of recess 301, and its center dant 301 can comprise many parallel grooves arranged side by side, and each groove has an elongated bottom side 301a and two side 301b respect to one another; Or the pothole of a plurality of intervals formation, each pothole has a bottom side 301a and is the sidewall 301b around shape.No matter recess 301 is groove or pothole, and sidewall 301b all can be perpendicular to bottom side 301a.Present embodiment through the recess 301 of many grooves of tool or a plurality of potholes, can increase the area that first extension electrode 309 contacts with second semiconductor layer 308 similar in appearance to aforementioned arbitrary embodiment further.

Seeing also Fig. 4 A and Fig. 4 B, is to show the fourth embodiment of the present invention, and wherein Fig. 4 A shows that recess 401 is the top view of groove form, and Fig. 4 B shows that recess 401 is the top view of pothole form.Present embodiment can be formed by aforementioned arbitrary embodiment variation, and the main difference part is that light-emitting component 400 can comprise at least one second extension electrode 411 that is extended and be formed at sidewall 403b surface by first extension electrode 409 again.Shown in Fig. 4 A and Fig. 4 B, black region is represented main electrode 410, first extension electrode 409, and second extension electrode 411.Formation through second extension electrode 411 can increase the ohmic contact area of 408 of metal electrode 405 and second semiconductor layers further.Because sidewall 403B can be perpendicular to bottom side 403a, the shading area of the light that therefore produces for luminescent layer 406 is very little.Shown in Fig. 4 B, when recess 401 was pothole, second extension electrode 411 can be formed at the sidewall 401b surface of whole or part.

See also Fig. 5, the light-emitting component 500 of fifth embodiment of the invention comprises: a substrate 502; One first semiconductor layer 504 is formed on the substrate 502, and is formed with a metal electrode 512 on the exposed surface of first semiconductor layer 504; One luminescent layer 506 is formed on first semiconductor layer 504; One second semiconductor layer 508 is formed on the luminescent layer 506, and second semiconductor layer, 508 surfaces are formed with a recess 501; An and metal electrode 505; Be formed on second semiconductor layer 508; Comprise that a main electrode 510 is formed on second semiconductor layer 508, reaches at least one first extension electrode 509 that is extended by main electrode 510, wherein first extension electrode 509 is complied with the surface formation of recess 501.Present embodiment can be similar in appearance to above embodiment, and difference is that main electrode 510 also can be formed on the recess 501, and makes the material of main electrode 510 be filled in the recess 501.

It should be noted, more than each embodiment according to the scale of actual product.

Cited each embodiment of the present invention in order to explanation the present invention, is not in order to limit scope of the present invention only.Anyone was to the present invention did any showing and be prone to the modification of knowing or change neither disengaging spirit of the present invention and scope.

Claims

1. light-emitting component comprises:

Substrate;

First semiconductor layer is formed on this substrate;

Luminescent layer is formed on this first semiconductor layer;

Second semiconductor layer is formed on this luminescent layer, and this second semiconductor layer surface forms a recess; And

Metal electrode is formed on this second semiconductor layer, comprises a main electrode and extends at least one first extension electrode of this main electrode;

Wherein this first extension electrode is complied with the surface formation of this recess.

2. light-emitting component as claimed in claim 1, wherein this recess comprises groove and/or the pothole that is formed on this second semiconductor layer.

3. light-emitting component as claimed in claim 2 when wherein this recess is this groove, has the bottom side and the two opposite side walls that are strip; When this recess is this pothole, have the bottom side and around sidewall.

4. light-emitting component as claimed in claim 3, wherein this first extension electrode also comprises second extension electrode and is formed at this two opposite side walls at least on one of them the surface.

5. like claim 2 or 3 described light-emitting components, wherein the two side of this groove is perpendicular to this bottom side, and/or this sidewall of this pothole is perpendicular to this bottom side.

6. light-emitting component as claimed in claim 1 comprises transparency conducting layer, is formed between this second semiconductor layer and this metal electrode.

7. light-emitting component as claimed in claim 6, this transparency conducting layer are formed on second semiconductor layer except that recess, and this first extension electrode directly contacts with the bottom side and the sidewall of recess.

8. light-emitting component as claimed in claim 6; Wherein this transparency conducting layer comprises the metal oxide of tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide aluminum (AZO), zinc-tin oxide (ZTO) or zinc oxide (ZnO), or the semiconducting compound of arsenic gallium aluminium (AlGaAs) or gallium phosphide (GaP).

9. light-emitting component as claimed in claim 1, this main electrode also is formed on this recess, and makes this recess filled by the material of this main electrode.

10. light-emitting component as claimed in claim 1, wherein this first semiconductor layer, second semiconductor, and the semiconducting compound of the luminous lamination that luminescent layer constituted comprise at least a element and be selected from the group that is constituted by aluminium (A1), gallium (Ga), indium (In), nitrogen (N), phosphorus (P) and arsenic (As).

11. light-emitting component as claimed in claim 1, wherein this recess comprises many parallel grooves arranged side by side and/or the pothole of a plurality of interval formation.

12. like claim 1 or 11 described light-emitting components, wherein this extension electrode and this recess intersect vertically.