CN102331513A - Ultrathin sensitive beam piezoresistance acceleration transducer - Google Patents
Ultrathin sensitive beam piezoresistance acceleration transducer Download PDFInfo
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- CN102331513A CN102331513A CN 201110161489 CN201110161489A CN102331513A CN 102331513 A CN102331513 A CN 102331513A CN 201110161489 CN201110161489 CN 201110161489 CN 201110161489 A CN201110161489 A CN 201110161489A CN 102331513 A CN102331513 A CN 102331513A
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Abstract
The invention relates to an ultrathin sensitive beam piezoresistance acceleration transducer. The ultrathin sensitive beam piezoresistance acceleration transducer is characterized by mainly comprising a silicon based frame, a mass block, main beams and micro beams, wherein the mass block is arranged in the silicon substrate frame, the silicon base frame is connected with the mass block by virtue of the main beams and the micro beams, micro beams which are mutually symmetric are arranged at the two sides of the mass block, each micro beam is provided with a strain resistor, symmetric main beams are arranged at four corners or the four corners and the middle part at the two sides of the mass block, which are provided with no micro beam, one end of each main beam is connected with the mass block, the other end of each main beam is connected with the silicon substrate frame; by adopting the symmetric structure, sensitivity and temperature stability of the piezoresistance type acceleration transducer can be improved, thus micro beams move in horizontal direction only and do not twist under the action of acceleration; strain distribution is uniform, position accuracy requirement is low, and the ultrathin sensitive beam piezoresistance acceleration transducer is easy to implement and can be widely applied to the field of acceleration measurement and control.
Description
Technical field
The present invention relates generally to a kind of acceleration transducer that adopts piezoresistive principles to make, and particularly relates to a kind of ultra-thin sensitive beam piezoresistive acceleration sensor, belongs to MEMS (MEMS) field.
Background technology
1979, Roylance and Angell adopted KOH corrosion bulk silicon technological, and single cantilever beam adds mass block structure, successfully develops the MEMS piezoresistive accelerometer.The MEMS piezoresistance type acceleration sensor is the piezoresistive effect that utilizes sensitive material, and mechanical signal is converted into electric signal.The sensing mode of MEMS piezoresistance type acceleration sensor adopts silicon beam-mass block structure mostly, and resistance is set on beam, under the acceleration effect; The mass motion; Thereby the silicon beam is produced and the proportional deformation of acceleration, cause the resistance of strain resistor on the beam that corresponding the variation taken place, when strain resistor during as the brachium pontis of measuring bridge; Through the variation of bridge output voltage, realize measurement to acceleration.The common structure form of MEMS piezoresistance type acceleration sensor has structures such as single girder, two girder and four beams.Sensitive material commonly used is a silicon, on silicon, makes resistance.
Common MEMS acceleration transducer is divided into condenser type, pressure resistance type, resonant mode and piezoelectric type etc.Great majority adopt elastic beam to add mass block structure, but this structure has natural frequency and the contradiction that sensitivity restricts mutually, causes being difficult to effectively improving natural frequency.The shortcoming of capacitance acceleration transducer is to need complicated signal processing circuit, and is prepared on the same chip with sensor, and manufacturing technique requirent is very high.Piezoresistance type acceleration sensor has that volume is little, wide ranges, the direct voltage output signal of measuring acceleration, do not need the complicated circuitry interface, advantage such as cheap when producing in enormous quantities.But piezoresistance type acceleration sensor has the bigger shortcoming of the drift of temperature.
Granted publication CN101118250A; Name is called the Chinese invention patent of " a kind of silicon MEMS piezoresistance type acceleration sensor "; It is characterized in that acceleration that sensor receives the sensitive direction direction of sensitive beam parallel axes (promptly with) makes the time spent mass and produce the rotation with respect to silica-based framework around the girder axis direction; Thereby on sensitive beam, form corresponding stress with accekeration; Its natural resonance frequency is by mass, torsion beam and sensitive beam decision; But the contradiction of sensitivity that in common piezoresistive transducer, exists and natural resonance mutual restriction is still unresolved, and since on the sensitive beam maximum strain zone less, the therefore this structure making difficult point of unresolved strain resistor still.
Granted publication CN1279362C; Name is called the Chinese invention patent of " a kind of silicon micro-acceleration sensor and method for making "; It is conceived design basically and makes a kind of structure that is made up of the little beam of straight pull and vertical compression, mass and semi-girder, realizes the straight pull and vertical compression of little beam, and the piezoresistance sensitivity resistance area is accomplished Wei Liangshang; The mass kinetic energy majority that acceleration is brought changes the potential energy of little beam tension and compression into, thereby has improved sensitivity.But because its mass is rotated as the time spent by acceleration, therefore, realize that the straight pull and vertical compression of little beam must accurately be controlled its position, craft precision is had relatively high expectations.
Summary of the invention
1, goal of the invention:
The objective of the invention is to the problems referred to above, propose a kind of highly sensitive, temperature and float the MEMS acceleration transducer that coefficient is little, natural resonance frequency is high and the interface circuit requirement is low.
2, technical scheme:
The present invention realizes through following technical scheme:
A kind of ultra-thin sensitive beam piezoresistive acceleration sensor is characterized in that: mainly be made up of silica-based framework, mass, girder and little beam, mass is arranged in the middle of the silica-based framework, and silica-based framework is connected with mass with little beam through girder; Be provided with little beam of mutual symmetry in the both sides of said mass, Wei Liangshang is provided with strain resistor; In four bights, no Wei Liang both sides of mass or four bights and middle part be provided with the girder of symmetry, girder one end quality of connection piece, the other end connects silica-based framework.
The girder cross-sectional area is far longer than little beam (generally more than 1000 times); The variation of mass and girder size can cause the marked change of sensor natural resonance frequency; Therefore, through the controllable size system resonance frequency of adjustment girder, through adjusting the sensitivity of little beam length may command sensor; Receive acceleration to make little beam of time spent and have only tangential movement and do not have twisting, and strain evenly distributes.
Said girder is set to two pairs or how right.
Said little beam is set to a pair of or how right.
Said strain resistor is a polysilicon nanometer thin film strain resistor, adopts the heavily doped polysilicon nano thin-film, and doping content is 2～4 * 10
20Cm
-3
Said polysilicon nanometer thin film thickness is approaching or less than 100nm, thickness is that the polysilicon nanometer thin film of 80～100nm is 3 * 10 in doping content
20Cm
-3Have significant tunnel piezoresistive effect when neighbouring, show the pressure drag characteristic more superior than conventional polysilicon nanometer thin film, thickness is that the polysilicon nanometer thin film pressure drag characteristic of 85nm～95nm is best.
3, advantage and effect:
A kind of ultra-thin sensitive beam piezoresistive acceleration sensor provided by the invention is compared with existing piezoresistance type acceleration sensor, has following advantage:
(1) adopt polysilicon nanometer thin film can improve the sensitivity and the temperature stability of piezoresistance type acceleration sensor as strain resistor.
(2) adopt girder and micro girder construction can improve transducer sensitivity and natural resonance frequency.
(3) four of mass bights or four bights and middle part are provided with the girder of symmetry, have limited the twisting of girder and mass, receive acceleration to make little beam of time spent and have only tangential movement and do not have twisting, and little beam strain evenly distributes.
(4) little beam is symmetrically distributed in mass does not have the girder both sides and can realize the straight pull and vertical compression purpose, not high to position accuracy demand, and technology realizes easily.
Description of drawings:
Fig. 1 is the 3-D solid structure synoptic diagram of a kind of structure of ultra-thin sensitive beam piezoresistive acceleration sensor;
Fig. 2 is the 3-D solid structure synoptic diagram of the another kind of structure of ultra-thin sensitive beam piezoresistive acceleration sensor;
Fig. 3 is the 3-D solid structure synoptic diagram of another structure of ultra-thin sensitive beam piezoresistive acceleration sensor;
Fig. 4 is the 3-D solid structure synoptic diagram of another structure of ultra-thin sensitive beam piezoresistive acceleration sensor.
Description of reference numerals:
1, silica-based framework, 2, mass, 3, girder, 4, Wei Liang, 5, strain resistor.
Embodiment:
Below in conjunction with accompanying drawing the present invention is done further explanation:
A kind of ultra-thin sensitive beam piezoresistive acceleration sensor; Like Fig. 1, shown in 2 and 3: mainly constitute by silica-based framework 1, mass 2, girder 3 and little beam 4 (claiming ultra-thin sensitivity little beam again); Mass 2 is arranged in the middle of the silica-based framework 1; Silica-based framework 1 is connected with mass 2 with little beam 4 through girder 3, and little beam 4 is provided with strain resistor 5.
Sensor construction of the present invention can adopt 2, two pairs of masses or many symmetrical structures to girder 3 and one or more pairs of little beams 4, and the quantity of girder 3 and little beam 4 can be provided with according to actual needs; Mass 2 is positioned in the middle of the silica-based framework 1; Be connected one through girder 3 and little beam 4 between mass 2 and the silica-based framework 1; Little beam 4 of mutual symmetry is set in the both sides of mass 2; Little beam 4 is one or more pairs of, and little beam 4 is provided with strain resistor 5, is used to detect receive acceleration to make the stress intensity on little beam 4 of time spent; In four bights, no Wei Liang both sides of mass 2 or four bights and middle part be provided with two pairs or many girders 3 altogether to symmetry, girder 3 one end quality of connection pieces 2, one ends connect silica-based framework 1.
Sensor receives the acceleration of the sensitive direction direction of little beam parallel axes (promptly with) and does the time spent; Mass 2 moves along sensitive direction, thereby on little beam 4, forms and the corresponding stress of accekeration, at this moment; Little beam 4 has only tangential movement and does not have twisting, and strain evenly distributes.
Through changing the design size of sensor mass piece 2 of the present invention and girder 3, can design the acceleration transducer of various ranges.
Principle of work of the present invention: the structure of this sensor of the present invention mainly is made up of silica-based framework 1, mass 2, four girders 3 and two little beams 4; Four girders 3 and two little beams 4 in succession mass 2 and silica-based framework 1, little beam 4 is mainly by silicon nitride-polysilicon nanometer thin film-three layers of formation of silicon nitride.On each little beam 4, utilize the polysilicon nanometer thin film in the interlayer to form two strain resistors 5, and four strain resistors on two little beams 4 are linked to be electric bridge along Y direction.When receiving the Y direction direction of little beam parallel axes (promptly with) acceleration, device does the time spent; Mass 2 moves; Stretching of two little beam 4 meetings, a compression, the output of electric bridge is directly proportional with the size of acceleration; Because girder 3 cross-sectional areas are far longer than little beam 4 (generally more than 1000 times); The change in size of mass 2 and girder 3 can cause the marked change of sensor natural resonance frequency, so just can be through the size Control resonance frequency of adjustment girder 3, the size of little beam 4 strains when controlling full scale through the length of adjusting little beam 4 again; Four girders 3 are symmetricly set on four bights of no little beam mass 2 both sides, and when receiving the Y directional acceleration to do the time spent, mass 2 does not rotate; Little beam 4 just produces the strain of Y direction, and girder 3 is small-sized the Y direction, and the size of Z and directions X is bigger; Therefore, the effective elasticity coefficient of Y direction is less, and the effective elasticity coefficient of directions X and Z direction is very big; Sensor is only responsive to the acceleration signal of Y direction like this, and the acceleration that receives directions X or Z direction when mass 2 is done the time spent, and the displacement that mass 2 produces is very little; Therefore little beam 4 distortion also can be very little, helps reducing the cross-couplings of sensor.
Through above design, can reach the purpose that improves resonance frequency and sensitivity to greatest extent synchronously.
The polysilicon nanometer thin film that the present invention adopts be thickness near or less than the polysilicon nanometer thin film (common polysilicon membrane general thickness is more than 200nm) of 100nm.Thickness is that the polysilicon nanometer thin film of 80～100nm is 3 * 10 in doping content
20Cm
-3Have significant tunnel piezoresistive effect when neighbouring, show the pressure drag characteristic more superior than conventional polysilicon nanometer thin film, strain factor (GF) is higher more than 20% than common polysilicon nanometer thin film; Strain factor temperature coefficient (TCGF) is littler more than one times than general thin; Temperature-coefficient of electrical resistance (TCR) is than the little one magnitude of general thin.Therefore, the strain resistor 5 that adopts polysilicon nanometer thin film to make has highly sensitive and the little advantage of temperature coefficient.
When making this ultra-thin sensitive beam piezoresistive acceleration sensor of the present invention; The employing silicon materials are substrate; Utilize existing MEMS technology to process, at first adopt LPCVD deposit silicon nitride layer and polysilicon nanometer thin film, adopt ion implantation technique manufacturing polycrystalline silicon nanometer thin film strain resistor 5 then; Adopt sputter and photoetching technique to make lead and connect into differential full-bridge, deposit silicon nitride forms passivation layer afterwards; Adopt wet etching or dry etching technology fabricating quality piece 2, girder 3 and discharge little beam 4, dry etching can reduce the technical difficulty in the front description protection greatly, and anisotropic etch can discharge the little beam 4 under the silicon nitride protection very safely.
Embodiment 1:
A kind of ultra-thin sensitive beam piezoresistive acceleration sensor, as shown in Figure 1, mainly constitute by silica-based framework 1, mass 2, girder 3 and little beam 4; Mass 2 is arranged in the middle of the silica-based framework 1; Silica-based framework 1 is connected with mass 2 with little beam 4 through girder 3, is provided with a pair of little beam 4 of mutual symmetry in the both sides of mass 2, and each little beam 4 is provided with two polysilicon nanometer thin film strain resistors 5; The thickness of polysilicon nanometer thin film is 80nm, and doping content is 3 * 10
20Cm
-3Be provided with four girders 3 of symmetry in four bights, no Wei Liang both sides of mass 2, girder 3 one end quality of connection pieces 2, the other end connects silica-based framework 1.
Embodiment 2:
A kind of ultra-thin sensitive beam piezoresistive acceleration sensor, as shown in Figure 2, mainly constitute by silica-based framework 1, mass 2, girder 3 and little beam 4; Mass 2 is arranged in the middle of the silica-based framework 1; Silica-based framework 1 is connected with mass 2 with little beam 4 through girder 3, is provided with the little beam 4 of two couples of mutual symmetry in the both sides of mass 2, and each little beam 4 is provided with a polysilicon nanometer thin film strain resistor 5; The thickness of polysilicon nanometer thin film is 100nm, and doping content is 2 * 10
20Cm
-3Be provided with four girders 3 of symmetry in four bights, no Wei Liang both sides of mass 2, girder 3 one end quality of connection pieces 2, the other end connects silica-based framework 1.
Embodiment 3:
A kind of ultra-thin sensitive beam piezoresistive acceleration sensor, as shown in Figure 3, mainly constitute by silica-based framework 1, mass 2, girder 3 and little beam 4; Mass 2 is arranged in the middle of the silica-based framework 1; Silica-based framework 1 is connected with mass 2 with little beam 4 through girder 3, is provided with the little beam 4 of two couples of mutual symmetry in the both sides of mass 2, and each little beam 4 is provided with two polysilicon nanometer thin film strain resistors 5; The thickness of polysilicon nanometer thin film is 90nm, and doping content is 3 * 10
20Cm
-3Be provided with four girders 3 of symmetry in four bights, no Wei Liang both sides of mass 2, girder 3 one end quality of connection pieces 2, the other end connects silica-based framework 1.
Embodiment 4:
A kind of ultra-thin sensitive beam piezoresistive acceleration sensor, as shown in Figure 4, mainly constitute by silica-based framework 1, mass 2, girder 3 and little beam 4; Mass 2 is arranged in the middle of the silica-based framework 1; Silica-based framework 1 is connected with mass 2 with little beam 4 through girder 3, is provided with the little beam 4 of three couples of mutual symmetry in the both sides of mass 2, and each little beam 4 is provided with a polysilicon nanometer thin film strain resistor 5; The thickness of polysilicon nanometer thin film is 95nm, and doping content is 4 * 10
20Cm
-3Six girders 3 that are provided with symmetry at four bights, no Wei Liang both sides and the middle part of mass 2, girder 3 one end quality of connection pieces 2, the other end connects silica-based framework 1.
This ultra-thin sensitive beam piezoresistive acceleration sensor of the present invention; Have broad quantum, highly sensitive, temperature and float that coefficient is little, natural resonance frequency is high and the peripheral circuit characteristic of simple; Can be widely used in the measurement and the control of acceleration, in fields such as motion control, safe automobile air bag, geographical physics monitoring.
Claims (4)
1. ultra-thin sensitive beam piezoresistive acceleration sensor; It is characterized in that: mainly constitute by silica-based framework (1), mass (2), girder (3) and little beam (4); Mass (2) is arranged in the middle of the silica-based framework (1), and silica-based framework (1) is connected with mass (2) with little beam (4) through girder (3); Be provided with little beam (4) of mutual symmetry in the both sides of said mass (2), little beam (4) is provided with strain resistor (5); In four bights, no Wei Liang both sides of mass (2) or four bights and middle part be provided with the girder (3) of symmetry, girder (3) one end quality of connection pieces (2), the other end connects silica-based framework (1).
2. a kind of ultra-thin sensitive beam piezoresistive acceleration sensor according to claim 1, it is characterized in that: said girder (3) is set to two pairs or how right.
3. a kind of ultra-thin sensitive beam piezoresistive acceleration sensor according to claim 1, it is characterized in that: said little beam (4) is set to a pair of or how right.
4. a kind of ultra-thin sensitive beam piezoresistive acceleration sensor according to claim 1 is characterized in that: said strain resistor (5) is a polysilicon nanometer thin film strain resistor, adopts the heavily doped polysilicon nano thin-film, and doping content is 2～4 * 10
20Cm
-3
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| CN 201110161489 CN102331513A (en) | 2011-06-16 | 2011-06-16 | Ultrathin sensitive beam piezoresistance acceleration transducer |
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| CN 201110161489 CN102331513A (en) | 2011-06-16 | 2011-06-16 | Ultrathin sensitive beam piezoresistance acceleration transducer |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102589762A (en) * | 2012-03-08 | 2012-07-18 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| CN103017946A (en) * | 2012-12-05 | 2013-04-03 | 北京大学 | Micro-electromechanical system (MEMS) piezoresistive multi-axis force sensor and production method thereof |
| CN103235155A (en) * | 2013-04-28 | 2013-08-07 | 厦门乃尔电子有限公司 | Piezoresistive acceleration sensor with full-bridge micro-beam structure |
| CN104236593A (en) * | 2013-06-13 | 2014-12-24 | 中国科学院上海微系统与信息技术研究所 | Stretch modal sensor and manufacturing method thereof |
| CN104391133A (en) * | 2014-11-19 | 2015-03-04 | 沈阳工业大学 | Piezoresistive high-natural-frequency MEMS (Micro Electro Mechanical Systems) acceleration sensitive chip and manufacturing method thereof |
| CN104237559B (en) * | 2014-07-30 | 2017-01-18 | 昆山泰莱宏成传感技术有限公司 | Ultrahigh accelerating impact sensor based on embedded microcolumn and preparing method of ultrahigh accelerating impact sensor |
| CN107656094A (en) * | 2016-07-26 | 2018-02-02 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of highly doped silicon micro-resonance type accelerometer |
| CN107796955A (en) * | 2017-09-30 | 2018-03-13 | 西安交通大学 | Double-axel acceleration sensor chip and preparation method thereof in more beam type single mass faces |
| CN107817364A (en) * | 2017-09-30 | 2018-03-20 | 西安交通大学 | A kind of axis accelerometer chip of MEMS straight pull and vertical compressions formula two and preparation method thereof |
| CN112285384A (en) * | 2020-09-17 | 2021-01-29 | 南京高华科技股份有限公司 | Acceleration sensor based on mechanical metamaterial structure |
| CN112798821A (en) * | 2020-12-28 | 2021-05-14 | 武汉大学 | Double-shaft piezoelectric accelerometer |
| CN113945732A (en) * | 2021-10-18 | 2022-01-18 | 中国人民解放军国防科技大学 | Graphene double-shaft differential resonant accelerometer |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102589762B (en) * | 2012-03-08 | 2014-01-15 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| CN102589762A (en) * | 2012-03-08 | 2012-07-18 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| CN103017946A (en) * | 2012-12-05 | 2013-04-03 | 北京大学 | Micro-electromechanical system (MEMS) piezoresistive multi-axis force sensor and production method thereof |
| CN103235155B (en) * | 2013-04-28 | 2016-05-11 | 厦门乃尔电子有限公司 | A kind of piezoresistance type acceleration sensor with full-bridge micro girder construction |
| WO2014176830A1 (en) * | 2013-04-28 | 2014-11-06 | 厦门乃尔电子有限公司 | Piezoresistive acceleration sensor having full-bridge microbeam structure |
| CN103235155A (en) * | 2013-04-28 | 2013-08-07 | 厦门乃尔电子有限公司 | Piezoresistive acceleration sensor with full-bridge micro-beam structure |
| CN104236593A (en) * | 2013-06-13 | 2014-12-24 | 中国科学院上海微系统与信息技术研究所 | Stretch modal sensor and manufacturing method thereof |
| CN104236593B (en) * | 2013-06-13 | 2016-05-11 | 中国科学院上海微系统与信息技术研究所 | Stretch modal sensor and manufacture method thereof |
| CN104237559B (en) * | 2014-07-30 | 2017-01-18 | 昆山泰莱宏成传感技术有限公司 | Ultrahigh accelerating impact sensor based on embedded microcolumn and preparing method of ultrahigh accelerating impact sensor |
| CN104391133B (en) * | 2014-11-19 | 2017-06-06 | 沈阳工业大学 | Pressure resistance type high natural frequency MEMS acceleration sensitives chip and its manufacture method |
| CN104391133A (en) * | 2014-11-19 | 2015-03-04 | 沈阳工业大学 | Piezoresistive high-natural-frequency MEMS (Micro Electro Mechanical Systems) acceleration sensitive chip and manufacturing method thereof |
| CN107656094A (en) * | 2016-07-26 | 2018-02-02 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of highly doped silicon micro-resonance type accelerometer |
| CN107796955A (en) * | 2017-09-30 | 2018-03-13 | 西安交通大学 | Double-axel acceleration sensor chip and preparation method thereof in more beam type single mass faces |
| CN107817364A (en) * | 2017-09-30 | 2018-03-20 | 西安交通大学 | A kind of axis accelerometer chip of MEMS straight pull and vertical compressions formula two and preparation method thereof |
| CN112285384A (en) * | 2020-09-17 | 2021-01-29 | 南京高华科技股份有限公司 | Acceleration sensor based on mechanical metamaterial structure |
| CN112798821A (en) * | 2020-12-28 | 2021-05-14 | 武汉大学 | Double-shaft piezoelectric accelerometer |
| CN112798821B (en) * | 2020-12-28 | 2021-10-08 | 武汉大学 | Double-shaft piezoelectric accelerometer |
| CN113945732A (en) * | 2021-10-18 | 2022-01-18 | 中国人民解放军国防科技大学 | Graphene double-shaft differential resonant accelerometer |
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Application publication date: 20120125 |