CN102328351A - Cutting line for silicon wafer cutting - Google Patents
Cutting line for silicon wafer cutting Download PDFInfo
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- CN102328351A CN102328351A CN201110166583A CN201110166583A CN102328351A CN 102328351 A CN102328351 A CN 102328351A CN 201110166583 A CN201110166583 A CN 201110166583A CN 201110166583 A CN201110166583 A CN 201110166583A CN 102328351 A CN102328351 A CN 102328351A
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- line
- cutting
- carborundum
- cut
- cutting line
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Abstract
The invention provides a cutting line for silicon wafer cutting, and the cutting line comprises a line body, wherein the peripheral surface of the line body is uniformly and fixedly provided with an abrasive substance, the abrasive substance is composed of carborundum, chromium sesquioxide and silicon carbide, and the granularities of the carborundum, the chromium sesquioxide and the silicon carbide are all 18 um. The cutting line provided by the invention can simultaneously cut a plurality of silicon wafers, the productive rate is high, the surface quality of a cut silicon wafer is higher, and the phenomenon of wafer disintegrating is uneasy to occur, thereby not only solving the problem of silicon wafer material waste, but also solving the problems that the cutting line is easy to wear and short in service life; and the cutting line provided by the invention facilitates the cooling of a cooling solution and can be used for avoiding the pollution to the environment caused by mortars, thereby improving the environmental performance.
Description
Technical field
The present invention relates to a kind of line of cut, particularly cut the line of cut that silicon chip is used, belong to the technical field of silicon chip cutting equipment.
Background technology
Along with the development of society, the maturation of photovoltaic industry, the use of silicon chip is more and more.Because silicon chip belongs to hard material, its cutting technique occupies very important position in processing technology.The mode of steel disc cutting is adopted in the cutting of traditional silicon chip, defectives such as this cutting mode exists that joint-cutting broad, volume recovery are low, surface figure accuracy difference and surface damage layer depth.In order to address the above problem, the line cutting has appearred recently, have the mortar of abrasive material through the line of cut supply; Realize the cutting of silicon chip through the abrasive wear principle between abrasive material, line of cut and the silicon crystal; This mode can realize the cutting of multi-disc silicon chip, and cutting efficiency is high, and the silicon chip surface quality is good; But owing to be between abrasive material and the cutting silk more friction to be arranged, the service life of cutting silk is shorter.
Summary of the invention
Technical problem to be solved by this invention provides a kind of long service life, the line of cut that is used for the silicon chip cutting simple in structure.
In order to solve the problems of the technologies described above; A kind of line of cut that is used for the silicon chip cutting of the present invention; Comprise the line body, wherein, evenly be fixed with abrasive material on the external side face of said line; Said abrasive material is made up of diamond dust, chrome green and carborundum, and the granularity of diamond dust, chrome green and carborundum is 18um; The shared parts by weight of each component are in this abrasive material: diamond dust is 30-55 part; Chrome green is 5-15 part; Carborundum is 8-16 part.
Above-mentioned a kind of line of cut that is used for the silicon chip cutting, wherein, the external side face of said line is provided with anticorrosive coat.
The present invention can cut the multi-disc silicon chip simultaneously, and yield rate is high, and the silicon chip surface quality is higher; Be not easy to occur the phenomenon of disintegrating tablet, the waste problem of the silicon sheet material that not only solves, and solved the line of cut easy abrasion; The problem that service life is short; And the present invention makes things convenient for the cooling of cooling fluid, avoids mortar that environment is polluted, and has improved environmental-protecting performance; In addition, the external side face of line is provided with anticorrosive coat, and cooling fluid is brought corrosion to the line body when avoiding the use of, and has prolonged service life of the present invention.
Description of drawings
Fig. 1 is a structural representation of the present invention.
The specific embodiment
Below in conjunction with accompanying drawing the present invention is described further.
As shown in the figure, in order to solve the problems of the technologies described above, a kind of line of cut that is used for the silicon chip cutting of the present invention comprises line body 1, wherein, evenly is fixed with abrasive material 2 on the external side face of said line, and said abrasive material 2 is made up of diamond dust, chrome green and carborundum; The shared parts by weight of each component are in this abrasive material 2: diamond dust is 30-55 part; Chrome green is 5-15 part; Carborundum is 8-16 part, and the present invention can cut the multi-disc silicon chip simultaneously, and yield rate is high, and the silicon chip surface quality is higher; Be not easy to occur the phenomenon of disintegrating tablet, the waste problem of the silicon sheet material that not only solves, and solved the line of cut easy abrasion; The problem that service life is short, and the present invention makes things convenient for the cooling of cooling fluid, avoids mortar that environment is polluted; Improved environmental-protecting performance,, can on said line body 1 outer peripheral face, be provided with anticorrosive coat 3 in order to improve service life of the present invention.
Embodiment one
A kind of line of cut that is used for the silicon chip cutting comprises line body 1, evenly is fixed with abrasive material 2 on said line body 1 outer peripheral face, and said abrasive material 2 is made up of diamond dust, chrome green and carborundum; The shared parts by weight of each component are in this abrasive material 2: diamond dust is 30 parts; Chrome green is 5 parts; Carborundum is 8 parts, gets above-mentioned material, above-mentioned material is put into edge mill pulverize; Make diamond dust, chrome green and silicon-carbide particle degree be 18 μ m, more above-mentioned material is mixed, put into grain-making machine and make material; Form abrasive grain, the shape of abrasive grain is unrestricted, and the granularity of abrasive grain is 30 μ m; Pass through resin binder again with forming abrasive material 2 on bonding online body 1 outer peripheral face of above-mentioned abrasive grain,, can select for use phenolic resins as adhesive for bonding convenience.
Embodiment two
A kind of line of cut that is used for the silicon chip cutting comprises line body 1, evenly is fixed with abrasive material 2 on said line body 1 outer peripheral face, and said abrasive material 2 is made up of diamond dust, chrome green and carborundum; The shared parts by weight of each component are in this abrasive material 2: diamond dust is 40 parts; Chrome green is 8 parts; Carborundum is 18 parts, gets above-mentioned material, above-mentioned material is put into edge mill pulverize, and makes diamond dust, chrome green and silicon-carbide particle degree be 18 μ m; Again above-mentioned material is mixed, put into grain-making machine and make material, form abrasive grain, form abrasive grain; The shape of abrasive grain is unrestricted, and the granularity of abrasive grain is 30 μ m; Pass through resin binder again with forming abrasive material 2 on bonding online body 1 outer peripheral face of above-mentioned abrasive grain,, can select for use phenolic resins as adhesive for bonding convenience.
Embodiment three
A kind of line of cut that is used for the silicon chip cutting comprises line body 1, evenly is fixed with abrasive material 2 on said line body 1 outer peripheral face, and said abrasive material 2 is made up of diamond dust, chrome green and carborundum; The shared parts by weight of each component are in this abrasive material 2: diamond dust is 55 parts; Chrome green is 15 parts; Carborundum is 16 parts, gets above-mentioned material, above-mentioned material is put into edge mill pulverize, and makes diamond dust, chrome green and silicon-carbide particle degree be 18 μ m; Again above-mentioned material is mixed, put into grain-making machine and make material, form abrasive grain; Form abrasive grain, the shape of abrasive grain is unrestricted, and the granularity of abrasive grain is 30 μ m; Pass through resin binder again with forming abrasive material 2 on bonding online body 1 outer peripheral face of above-mentioned abrasive grain,, can select for use phenolic resins as adhesive for bonding convenience.
Those of ordinary skill in the art will be appreciated that; Above embodiment is used for explaining the object of the invention; And be not with opposing qualification of the present invention; As long as in essential scope of the present invention, all will drop in the scope of claim of the present invention variation, the modification of the above embodiment.
Claims (2)
1. one kind is used for the line of cut that silicon chip cuts; Comprise the line body, it is characterized in that, evenly be fixed with abrasive material on the external side face of said line; Said abrasive material is made up of diamond dust, chrome green and carborundum, and the granularity of diamond dust, chrome green and carborundum is 18um; The shared parts by weight of each component are in this abrasive material: diamond dust is 30-55 part; Chrome green is 5-15 part; Carborundum is 8-16 part.
2. a kind of according to claim 1 line of cut that is used for the silicon chip cutting is characterized in that the external side face of said line is provided with anticorrosive coat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110166583A CN102328351A (en) | 2011-06-20 | 2011-06-20 | Cutting line for silicon wafer cutting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110166583A CN102328351A (en) | 2011-06-20 | 2011-06-20 | Cutting line for silicon wafer cutting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102328351A true CN102328351A (en) | 2012-01-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110166583A Pending CN102328351A (en) | 2011-06-20 | 2011-06-20 | Cutting line for silicon wafer cutting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102328351A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123612A (en) * | 1998-04-15 | 2000-09-26 | 3M Innovative Properties Company | Corrosion resistant abrasive article and method of making |
| JP2002292551A (en) * | 2001-03-30 | 2002-10-08 | Ricoh Co Ltd | Cut-off wire and manufacturing method therefor |
| JP2004338023A (en) * | 2003-05-14 | 2004-12-02 | Noritake Co Ltd | Wire tool and its manufacturing method |
| JP2006231479A (en) * | 2005-02-25 | 2006-09-07 | Noritake Super Abrasive:Kk | Wire saw |
| CN101537519A (en) * | 2008-03-21 | 2009-09-23 | 张国大 | Method for manufacturing cutting line of electrical discharge machine |
| CN101541479A (en) * | 2006-07-14 | 2009-09-23 | 圣戈本磨料股份有限公司 | Backingless abrasive article |
| CN101564828A (en) * | 2009-06-03 | 2009-10-28 | 南京师范大学 | Wire saw for cutting hard and fragile materials and manufacturing method thereof |
-
2011
- 2011-06-20 CN CN201110166583A patent/CN102328351A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123612A (en) * | 1998-04-15 | 2000-09-26 | 3M Innovative Properties Company | Corrosion resistant abrasive article and method of making |
| JP2002292551A (en) * | 2001-03-30 | 2002-10-08 | Ricoh Co Ltd | Cut-off wire and manufacturing method therefor |
| JP2004338023A (en) * | 2003-05-14 | 2004-12-02 | Noritake Co Ltd | Wire tool and its manufacturing method |
| JP2006231479A (en) * | 2005-02-25 | 2006-09-07 | Noritake Super Abrasive:Kk | Wire saw |
| CN101541479A (en) * | 2006-07-14 | 2009-09-23 | 圣戈本磨料股份有限公司 | Backingless abrasive article |
| CN101537519A (en) * | 2008-03-21 | 2009-09-23 | 张国大 | Method for manufacturing cutting line of electrical discharge machine |
| CN101564828A (en) * | 2009-06-03 | 2009-10-28 | 南京师范大学 | Wire saw for cutting hard and fragile materials and manufacturing method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120125 |