CN102324586A - Micro-energy system with high weight ratio energy density and method and application thereof - Google Patents

Micro-energy system with high weight ratio energy density and method and application thereof Download PDF

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CN102324586A
CN102324586A CN201110180076A CN201110180076A CN102324586A CN 102324586 A CN102324586 A CN 102324586A CN 201110180076 A CN201110180076 A CN 201110180076A CN 201110180076 A CN201110180076 A CN 201110180076A CN 102324586 A CN102324586 A CN 102324586A
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sputtering
circuit
thickness
energy
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CN102324586B (en
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周健
孙晓玮
谈惠祖
周舟
王伟
周建华
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a micro-energy system with a high weight ratio energy density, a method and application. The invention is characterized that the construction of the system comprising the following steps of: (1) sputtering and growing an Al film on the back surface of a GaAs battery; (2) sputtering and depositing nitrogenized Ni-Co on the surface of Al film, wherein the general formula is ComNi1-mN, and m is more than 0 and less than 1; (3) sputtering and depositing a Li1.3Ti1.7Al0.3(PO4)3 film on the surface of the nitrogenized Ni-Co film; (4) depositing a metal Li film on the Li1.3Ti1.7Al0.3(PO4)3 film; (5) sputtering a layer of Cu film on the surface of the Li film; and (6) during sputtering of the steps (2)-(5), firmly attaching a stainless steel mask plate to the Al surface of an uncovered multi-layer film on the surface of the Al film, arranging an energy management circuit and an RF (Radio-Frequency) transceiving module in sequence, and connecting the anode of the GaAs battery, the anode of the Li battery, the output end of the energy management module and the output end of the RF transceiving module with a metal wire. According to the invention, the high weight ratio energy density can be up to 438wh/kg, the system can work for 5 days continuously on cloudy days, and a technical measure is provided for long-time power supply and field application of the node miniaturization of the Internet of things.

Description

A kind of high gravimetric specific energy density micro-energy resource system, method and application thereof
Technical field
The present invention relates to a kind of high gravimetric specific energy density micro-energy resource system, method and application thereof, be specifically related to a kind of high gravimetric specific energy density, can make micro-energy resource system, preparation method and the application of Internet of Things node operate as normal under continuous cloudy condition.Belong to microelectronics technology.
Background technology
The microminiaturization of Internet of Things sensor node, can dispense, unattended operation is developing tendency in future; Volume, weight, power and operating current to the energy have all proposed special requirement; An urgent demand has that volume is little, in light weight, the high little energy of (weight, volume) specific capacity matches, the integrated gravimetric specific energy density that will help further improving micro-system of little energy and load monolithic.
The GaAs solar cell is a battery most effective in the present solar cell, AM1.5 (1000W/m 2, under 25 ℃ of conditions, IEC61646-ground is with the testing standard of photovoltaic module design and typing (GB/T18911-2002)); Efficient can reach more than 27%, and on the other hand, this cell substrate thickness is 200 microns; Has good supportive; It is alternative to become the integrated substrate of energy micro-system, utilizes the GaAs back side substrate can direct growth solid film lithium battery structure, simultaneously can integrated energy management and Internet of Things node transceiver module; Realize that effective monolithic is integrated, improve the gravimetric specific energy density of micro-system.
All solid-state thin-film lithium battery has overcome the shortcoming that conventional liquid state electrolyte battery needs tight encapsulation; Can be by sputtering technology film forming in a vacuum; Work simplification, process controllability is effectively promoted, and also becomes one of representative of long-life, high gravimetric specific energy density in the existing lithium battery simultaneously.All solid-state thin-film lithium battery is made up of cathode thin film, electrolytic thin-membrane and anode film three parts usually.Cathode film material in the conventional all solid-state thin-film lithium battery generally adopts LiCoO 2, LiMnZO and Li xV 2O 5There is the problem of complicated process of preparation in said material, and in the preparation process, generally needs high-temperature annealing process, and this annealing process will be damaged electronic devices and components, thereby has limited the application of all solid-state thin-film lithium battery in semicon industry.The present invention adopts sputtering technology to prepare the nickel oxide cobalt thin film as lithium cell cathode.Conventional lithium battery adopts liquid electrolyte, exists encapsulation sternly possibly not leak the shortcoming limited with cycle life, and solid electrolyte Li 1.3Ti 1.7Al 0.3(PO 4) 3Because have higher lithium ion conductivity, good electrochemical stability becomes the important alternative of current lithium cell electrolyte material.Select for use above-mentioned material and technology to help improving the gravimetric specific energy density of lithium battery.
If can utilize the high characteristics of GaAs battery efficiency; Then can more catch sunlight; Can store more energy through solid state lithium battery, be electrical power storage and be the sensor node power supply that through the energy conservation cell translation catch luminous energy and supply working sensor simultaneously the daytime of realization node; Lithium battery supply at night working sensor is realized long-time pattern of supplying power.The present invention just is being based on the above-mentioned background proposition.
Summary of the invention
The purpose of this invention is to provide a kind of high gravimetric specific energy density micro-energy resource system, manufacture method and application thereof, the invention solves the problem of existing micro-energy resource system low energy densities (, being merely 100-200Wh/Kg) like poly-lithium battery.1), at GaAs battery back of the body surface sputtering growth Al film (thickness range 150-350nm), at Al surface sputtering deposition Co the invention provides the technical solution of micro-energy resource system: a kind of high gravimetric specific energy density micro-energy resource system is characterized in that: mNi 1-mN (0＜m＜1) film, deposition process conditions are to mix by a certain proportion of Co nano powder and Ni nano powder in the general formula, the vacuum fusion calcining, and preparation metallic cobalt nickel alloy target, through the method cvd nitride nickel cobalt thin film of rf magnetron sputtering, base vacuum is 2 * 10 -4Below the Pa, substrate temperature is 800-1000nm less than 80 ℃ until the thickness of nickel oxide cobalt thin film during deposition;
2), at nickel oxide cobalt thin film surface sputtering deposition Li 1.3Ti 1.7Al 0.3(PO 4) 3Film; Manufacture craft is to make Li earlier 1.3Ti 1.7Al 0.3(PO 4) 3Alloy target material adopts this target, and spatter film forming in the Ar environment is until Li 1.3Ti 1.7Al 0.3(PO 4) 3The thickness of film is 1500-1700nm;
3), at Li 1.3Ti 1.7Al 0.3(PO 4) 3Plated metal Li film on the film.Its preparation technology adopts the vacuum thermal evaporation deposition, and base vacuum is 2x10 -4Below the Pa, substrate temperature is a room temperature, and evaporation rate 400～1100nm/min is 1000-1200nm until the thickness of lithium film.
4), at Li film surface spatter film forming one deck Cu film, its preparation process condition is a spatter film forming in the Ar environment, base vacuum is 2x10 -4Below the Pa, substrate temperature is a room temperature, and evaporation rate 500nm/min is 500-800nm up to Cu thickness
When the nickel oxide cobalt film of above-mentioned deposition, (comprise deposition Li 1.3Ti 1.7Al 0.3(PO 4) 3Film and Li film and Cu film) adopt stainless steel mask plate and Al surface to be close to, mask plate exposes certain area, and is surperficial at the Al film of clad battery multilayer film not, and energy conservation circuit and RF transceiver module (seeing embodiment for details) are installed successively.
This shows that the sputtering condition of 1. described radio frequency magnetron sputtering method cvd nitride nickel cobalt (alloy) film is: the distance of target and substrate base is 4.5cm, background pressure is 2 * 10 -4Target is wanted reverse sputtering 25min before the Pa, deposit film, and reverse sputtering power 150W, sputtering atmosphere are the mist of 2.5: 1 hydrogen of volume ratio and nitrogen, and flow velocity is 35sccm, and operating air pressure is 1.2Pa, and deposition power is 120W, and substrate temperature is less than 90 ℃ during deposition;
2. described radio frequency magnetron sputtering method deposition Li 1.3Ti 1.7Al 0.3(PO 4) 3The sputtering condition of film is: target is 7cm to the distance of substrate, and background pressure is 2 * 10 -4Target is wanted reverse sputtering 25min before the Pa, deposit film, and reverse sputtering power 50-100W, sputtering atmosphere are pure Ar gas, and flow velocity is 30sccm, and operating air pressure is 1.6Pa, and deposition power is 125W, and substrate temperature is less than 90 ℃ during deposition;
3. described micro-energy resource system adopts the connecting line of metal (comprising Al, Au, Ag, Cu, Ni or V) as multimode;
4. described micro-energy resource system adopts GaAs battery back of the body surface as the integrated substrate of multimode, and conserve space and weight have improved gravimetric specific energy density;
5. the used GaAs efficiency of solar cell of said micro-energy resource system can be full of for lithium battery greater than 27% (AM1.5) in 5 hours;
6. prepared solid-state Li battery capacity can satisfy the Internet of Things node and work under the continuous cloudy condition at 5 days greater than 300 μ Ah in the said micro-energy resource system;
Micro-energy resource system of the present invention can a) be applied to be the energy supply of Internet of Things node.Existing Internet of Things sensor node generally adopts the Ni-MH battery power supply, and yardstick is 4*4*4cm 3More than, gravimetric specific energy density is≤100WH/Kg, document and do not see and use the single chip integrated practical application report of GaAs substrate, energy storage, energy conservation and load.Usually adopt the sensor node of 1 primary cell, the intact back of battery consumption battery node lost efficacy; And the sensor node of employing secondary cell after battery consumption is intact, needs manual work to change electricity or charging, can not adapt to and shed on a large scale future, long-time unattended demand;
B) said high gravimetric specific energy density micro-energy resource system can be applied to be the energy supply of nanometer satellite.The nanometer satellite is meant the satellite of weight at 1-10Kg; Along with integrated circuit and the continuous development of low-light mechanical system technique and reducing of satellite weight, comprise that increase trend appears in energy resource system proportion in whole satellite of solar cell, energy conservation circuit and energy-storage battery.Thin film technique is applied to solar cell and energy storage and energy conservation unit integrated, improves gravimetric specific energy density, help to change this trend.The microminiaturized single slice integration technique of energy resource system becomes the energy technology development priority that following nanometer satellite reaches littler satellite.Energy storage on the existing satellite adopts ni-mh, Cu 2In 2Ga 2Se 2Batteries such as (CIGS solar cell, efficient 15%), it is integrated not form monolithic as yet.The technology that American I TN energy resource system company adopts U.S.'s Oak Ridge National Laboratory (ORNL) to provide has been produced all solid-state thin-film lithium battery and has been combined flexible Cu 2In 2Ga 2Se 2(CIGS) solar cell; Add flexible electrical source control circuit; Developed the flexible integrated power supply module of satellite with Highgrade integration; For stored energy source in the nanometer satellite technical support [Backanski M.J.Solar Energy Materials & Solar Cells, 2000,62:21.] is provided.Adopt the integrated solid state lithium battery of GaAs battery, be expected to realize high gravimetric specific energy density micro-system, for the nanometer satellite provides " round-the-clock power supply ".
In sum, high gravimetric specific energy density micro-energy resource system provided by the invention has the following advantages:
1, one deck Al film is both as being connected between GaAs and lithium battery, as being connected between lithium battery and energy conservation circuit, reduced the external circuit connection again, and it is integrated to be convenient to monolithic.
2, GaAs solar cell front is used to catch sunlight, and the back side is used for storing and management energy, and light is caught, manages, stored and use is integrated on the module, saves the space, has improved the energy density per unit volume metric density of micro-system
3, GaAs has 27% high efficiency, can capture ratio the more solar energy of conventional CIGS battery, realize the charging demand of lithium battery.
4, load is the Internet of Things sensor node, and the micro-energy resource system gravimetric specific energy density that provides is up to 438WH/Kg, can realize that 5 days no sunlights supply power continuously.
Description of drawings
Fig. 1, micro-energy resource system structural representation (a) are front view, (b) are upward view;
Fig. 2, high gravimetric specific energy density energy micro-system design and fabrication flow process.
1 represents the GaAs battery among the figure, 200 microns of thickness; 2 represent cathode current collector Al (150-350nm); 3 represent negative electrode Co xNi 1-xN (0≤m≤1), thickness 800-1000nm; 4 represent solid electrolyte Li 1.3Ti 1.7Al 0.3(PO 4) 3, thickness 1500-1700nm; 5 represent anode Li film, and thickness is 1000-1200nm; 6 represent lithium battery collector electrode Cu, thickness 500-800nm; 7 represent the energy conservation circuit; 8 represent the RF transceiver module; 9 represent solder joint; 10 represent the Au line.
Embodiment
The present invention be a kind of high gravimetric specific energy density micro-energy resource system making flow process (like Fig. 2) as follows:
1. GaAs solar cell back of the body surface is cleaned, cleaning condition is to use isopropyl alcohol, million cleanings, normal temperature, 3min;
2. sputter growth 150-350nm Al film; Sputtering condition is: Al target (5N) is 4.5cm with the distance of substrate base, and background pressure is 2 * 10 -4Target is wanted reverse sputtering 30min, reverse sputtering power 90W before the Pa, deposit film; Sputtering atmosphere is Ar, and flow velocity is 30sccm, and operating air pressure is 1.2Pa; Deposition power is 110W, and substrate temperature is less than 90 ℃ during deposition, and deposition rate is 25nm/min; Regulate the successive sedimentation time, can obtain the Al film that thickness is about 150-350nm;
3. Co xNi 1-xThe N film: it is 100mm that diameter is adopted in sputter, and thickness is that the metallic nickel cobalt alloy of 5mm is as sputtering target material, through method cvd nitride nickel cobalt Co on the Al film that 2. step grows of rf magnetron sputtering mNi 1-mN, 0＜m＜1, film is as anode film, and sputtering condition is: the distance of target and substrate base is 4.5cm, and background pressure is 2 * 10 -4Target is wanted reverse sputtering 25min, reverse sputtering power 150W before the Pa, deposit film; Sputtering atmosphere is the mist of 2.5: 1 hydrogen of volume ratio and nitrogen, and flow velocity is 35sccm, and operating air pressure is 1.2Pa; Deposition power is 120W, during deposition substrate temperature less than 90 ℃, rate of film build 45nm/min; Regulate film formation time, forming thickness is the Co of 800-1000nm xNi 1-xThe N film; Adopt stainless steel mask plate and Al surface to be close to, mask exposes the not window of 0.75 * 1cm2 of area, shown in Fig. 1 (b);
4. on the nickel oxide cobalt thin film that the method that adopts magnetron sputtering on the step film is 3. depositing, continue deposition Li 1.3Ti 1.7Al 0.3(PO 4) 3Film is as electrolytic thin-membrane, and sputtering condition is: target is 7cm to the distance of substrate, and background pressure is 2 * 10 -4Target is wanted reverse sputtering 25min before the Pa, deposit film, and reverse sputtering power 50-100W, sputtering atmosphere are pure Ar gas, and flow velocity is 30sccm, and operating air pressure is 1.6Pa, and deposition power is 125W, and substrate temperature is less than 90 ℃ during deposition.Rate of film build 40nm/min regulates film formation time, is 1500-1700nm up to film forming thickness;
5. step 4. at Li 1.3Ti 1.7Al 0.3(PO 4) 3Sputtering sedimentation metal Li film on the film: condition is that base vacuum is 2x10 -4Below the Pa, substrate temperature is a room temperature, and rate of film build 55nm/min regulates film formation time, is 1000-1200nm until the thickness of lithium metal film;
6. deposit the Cu film as anode collector at the Li thin film sputtering, sputtering condition is: the distance of target and substrate base is 4.5cm, and background pressure is 2 * 10 -4Target is wanted reverse sputtering 25min, reverse sputtering power 50-100W before the Pa, deposit film; Sputtering atmosphere is Ar, and flow velocity is 30sccm, and operating air pressure is 1.2Pa; Deposition power is 80W, and substrate temperature is less than 100 ℃ during deposition, and deposition rate is 20nm/min; Regulate film formation time, can obtain the nickel oxide cobalt thin film that thickness is about 500-800nm.
7. at the Al mounted on surface energy conservation circuit of clad battery multilayer film not, make a circuit output end link to each other with Al through conductive silver glue.The circuit that the energy conservation circuit makes up for the FSA582 charging management chip that adopts DynaColor Electronics Ltd.; Conducting resinl and non-conductive glue and Al surface bonding are adopted in the circuit back side; One of conducting resinl connecting circuit output and Al surface, non-conductive end in the non-conductive glue connecting circuit back side and Al line.The other output of energy conservation circuit links to each other with Cu with the RF module.The connection means adopt wire bonding method, and connecting material is the Au line.
8. in the Al mounted on surface RF module of clad battery multilayer film not, the RF module is used for transfer of data, and the unit module circuit is made up of low-power consumption, the short-range wireless communication module CC2420 that Chipcon company produces; Can information such as the temperature that detects, humidity be sent; Sent 1 time, and sent pulse current 1A, 48ms at every turn in per 8 hours; Standby current is 40mA, output voltage 3.3V.RF module one output links to each other with the Al film through conducting resinl, and an other output is anodal with GaAs through the Au line, the energy conservation circuit output end links to each other.The connection means adopt lead-in wire bonding (wire bonding) method, and connecting material is the Au line.
At last the micro-energy resource system of making is carried out electrical performance testing, judge whether to satisfy gravimetric specific energy density greater than 438WH/Kg and requirement that can continuous 5 days cloudy normal power supplies, if satisfy; Then accomplish designing and producing,, design the micro-energy resource system structure again if do not satisfy; Regulate lithium battery and account for GaAs solar cell area ratio, regulate the lithium cell electrolyte layer thickness, regulate the energy conservation circuit power consumption; Again make, up to satisfying the demands.

Claims (7)

1. one kind high gravimetric specific energy density micro-energy resource system is characterized in that consisting of of described micro-energy resource system:
(1) at GaAs battery back of the body surface sputtering growth Al film;
(2) at Al film surface sputtering cvd nitride nickel cobalt, its general formula is Co mNi 1-mN, 0＜m in the formula＜1;
(3) at nickel oxide cobalt thin film surface sputtering deposition Li 1.3Ti 1.7Al 0.3(PO 4) 3Film;
(4) at Li 1.3Ti 1.7Al 0.3(PO 4) 3Plated metal Li film on the film;
(5) at Li film surface spatter film forming one deck Cu film;
Expose the Al surface that does not cover multilayer film surperficial being close to of Al film during (6) sputter (2)～(5) with the stainless steel mask plate; Energy conservation circuit and RF transceiver module are installed successively, are connected GaAs anode, Li galvanic anode, energy conservation circuit output end and RF transceiver module output with gold thread.
2. by the described system of claim 1, it is characterized in that:
(a) described Al film thickness is 150-350nm;
(b) thickness of described Co nickel oxide cobalt thin film layer is 800-1000nm;
(c) described Li 1.3Ti 1.7Al 0.3(PO 4) 3The thickness of film is 1500-1700nm;
(d) thickness of described metal Li film is 1000-1200nm;
(e) described Cu film thickness is 500-800nm.
3. by the described system of claim 1, it is characterized in that:
A) not covering the Al mounted on surface energy conservation circuit of multilayer film, make a circuit output end link to each other with Al.The circuit that the energy conservation circuit makes up for the FSA582 charging management chip that adopts DynaColor Electronics Ltd.; Circuit back side conducting resinl and non-conductive glue and Al surface bonding; One of conducting resinl connecting circuit output and Al surface, non-conductive end in the non-conductive glue connecting circuit back side and Al line; The other output of energy conservation circuit links to each other with Cu with the RF module;
B) be used for the RF module of transfer of data in the Al mounted on surface that does not cover multilayer film; The unit module circuit is made up of low-power consumption, the short-range wireless communication module CC2420 that Chipcon company produces, and can information such as the temperature that detects, humidity be sent out, and sends 1 time in per 8 hours; Each pulse current 1A that sends; 48ms, standby current are 40mA, output voltage 3.3V; RF module one output links to each other with the Al film through conducting resinl, and an other output is anodal with GaAs through the Au line, the energy conservation circuit output end links to each other.The connection means adopt wire bonding method, and connecting material is the Au line.
4. by the described system of claim 3, it is characterized in that energy conservation circuit or RF transceiver module and being connected of Au line adopting wire bonding method.
5. make method, it is characterized in that concrete steps are like each described system among the claim 1-3:
1. cleaning condition is cleaned on GaAs solar cell back of the body surface: isopropyl alcohol, million normal temperature cleans normal temperature, 3min;
2. sputter growth Al film; Sputtering condition is: the distance of 5N Al target and substrate base is 4.5cm, and background pressure is 2 * 10 -4Pa, sputtering atmosphere Ar, flow velocity are 30sccm, and operating air pressure is 1.2Pa, and deposition power is 110W, and substrate temperature is lower than 90 ℃ during deposition, and deposition rate is 25nm/min, regulates the successive sedimentation time, can obtain the Al film thickness of the required 150-350nm of thickness;
3. sputter Co xNi 1-xThe N film: the employing diameter is 100mm, and thickness is that the metallic nickel cobalt alloy of 5mm is as sputtering target material, through method cvd nitride nickel cobalt Co on the Al film that 2. step grows of rf magnetron sputtering mNi 1-mN, 0＜m＜1, film is as anode film, and sputtering condition is: the distance of target and substrate base is 4.5cm, and background pressure is 2 * 10 -4Pa, sputtering atmosphere are the mist of 2.5: 1 hydrogen of volume ratio and nitrogen, and flow velocity is 35sccm; Operating air pressure is 1.2Pa, and deposition power is 120W, and substrate temperature is lower than 90 ℃ during deposition; Rate of film build 45nm/min regulates film formation time, and forming thickness is the Co of 800-1000nm xNi 1-xThe N film;
4. on the nickel oxide cobalt thin film that the method that adopts magnetron sputtering on the step film is 3. depositing, continue deposition Li 1.3Ti 1.7Al 0.3(PO 4) 3Film is as electrolytic thin-membrane, and sputtering condition is: target is 7cm to the distance of substrate, and background pressure is 2 * 10 -4Pa, sputtering atmosphere are pure Ar gas, and flow velocity is 30sccm, and operating air pressure is 1.6Pa, and deposition power is 125W, and substrate temperature is less than 90 ℃ during deposition; Rate of film build 40nm/min regulates film formation time, is 1500-1700nm up to film forming thickness;
5. at step Li 4. 1.3Ti 1.7Al 0.3(PO 4) 3Sputtering sedimentation metal Li film on the film, condition are that base vacuum is 2x10 -4Below the Pa, substrate temperature is a room temperature, and rate of film build 55nm/min regulates film formation time, is 1000-1200nm until the thickness of lithium metal film;
6. deposit the Cu film as anode collector at the Li thin film sputtering, sputtering condition is: the distance of target and substrate base is 4.5cm, and background pressure is 2 * 10 -4Pa, sputtering atmosphere are Ar, and flow velocity is 30sccm, and operating air pressure is 1.2Pa, and deposition power is 80W, and substrate temperature is less than 100 ℃ during deposition, and deposition rate is 20nm/min, regulate film formation time, can obtain the nickel oxide cobalt thin film that thickness is about 500-800nm;
7. do not covering above-mentioned multilayer film Al mounted on surface energy conservation circuit; Make a circuit output end link to each other with Al; Conducting resinl and non-conductive glue and Al surface bonding, one of conducting resinl connecting circuit output and Al surface, non-conductive end in the non-conductive glue connecting circuit back side and Al line are adopted in the circuit back side; The other output of energy conservation circuit links to each other with Cu with the RF module.The connection means adopt wire bonding method, and connecting material is the Au line;
8. be used for transfer of data RF transceiver module in the Al mounted on surface that does not cover above-mentioned multilayer film; The unit module circuit is made up of low-power consumption, the short-range wireless communication module CC2420 that Chipcon company produces, and can information such as the temperature that detects, humidity be sent, and sends 1 time in per 8 hours; Each pulse current 1A that sends; 48ms, standby current are 40mA, output voltage 3.3V; RF module one output links to each other with the Al film through conducting resinl, and an other output is anodal with GaAs through the Au line, the energy conservation circuit output end links to each other; The connection means adopt wire bonding method, and connecting material is the Au line;
9. at last the micro-energy resource system of 1.-8. making is carried out electrical performance testing, judge whether to satisfy gravimetric specific energy density greater than 430WH/Kg and requirement that can continuous 5 days cloudy normal power supplies, if satisfy; Then accomplish and design and produce; If do not satisfy, design the micro-energy resource system structure again, regulate lithium battery and account for GaAs solar cell area ratio, regulate the lithium cell electrolyte layer thickness and/or regulate the energy conservation circuit power consumption; Again make, up to satisfying the demands.
6. by the described method of claim 5, it is characterized in that:
1) target is wanted reverse sputtering 30min before the 2. described cleaning of step back GaAs solar battery surface sputter Al film, and reverse sputtering power is 90W;
2) target is wanted reverse sputtering 25min before the 3. described sputter nickel oxide of step cobalt thin film, and reverse sputtering power is 150W;
3) at 4. sputtering sedimentation Li of step 1.3Ti 1.7Al 0.3(PO 4) 3Target reverse sputtering 25min before the film, reverse sputtering 50-100W;
4) target reverse sputtering 25min before 6. step deposits the Cu film, reverse sputtering power is 50-100W.
7. by the application of the described system of claim 1, it is characterized in that round-the-clock energy supply being provided for the energy supply of Internet of Things node or for the nanometer satellite.
CN201110180076.3A 2011-06-24 2011-06-24 Micro-energy system with high weight ratio energy density and method and application thereof Expired - Fee Related CN102324586B (en)

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CN108511543A (en) * 2018-01-25 2018-09-07 北京创昱科技有限公司 A kind of integrated energy resource supply product and preparation method thereof and equipment
CN111726076A (en) * 2020-06-11 2020-09-29 中山德华芯片技术有限公司 Solar-energy-based power generation and energy storage integrated device and preparation method thereof
CN111960429A (en) * 2020-08-26 2020-11-20 万华化学集团股份有限公司 Preparation method of hierarchical porous aluminum phosphate molecular sieve catalyst, catalyst prepared by hierarchical porous aluminum phosphate molecular sieve catalyst and application of hierarchical porous aluminum phosphate molecular sieve catalyst in olefin isomerization

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