CN102320554A - Process for preparing nano seam by virtue of template alignment impressing - Google Patents
Process for preparing nano seam by virtue of template alignment impressing Download PDFInfo
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- CN102320554A CN102320554A CN201110191568A CN201110191568A CN102320554A CN 102320554 A CN102320554 A CN 102320554A CN 201110191568 A CN201110191568 A CN 201110191568A CN 201110191568 A CN201110191568 A CN 201110191568A CN 102320554 A CN102320554 A CN 102320554A
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Abstract
The invention relates to a process for preparing a nano seam by virtue of template alignment impressing. The process comprises the following steps of: firstly, preparing a three-layer structure comprising a rigid substrate layer, a flexible material layer and a rigid material layer; then carrying out alignment impressing by adopting a template, preparing corresponding impressing templates according to different nano seam structures, and applying an external pressure at a position required to produce the nano seam by virtue of the template by adopting an alignment process so as to carry out impressing; and finally carrying out secondary alignment pressing by utilizing a second flat plate to align nano seams on a film material in fracture dislocation, so as to further reduce the space between the nano seams, and carrying out alignment impressing by adopting a nano seam template to cause the flexible material layer to deform and the top rigid material film to break, so as to form a single nano seam or a nano seam array. The process provided by the invention can be used for effectively breaking through complex process flow and expensive processing equipment in the conventional nano seam preparation process, the nano seam structure can be prepared with low cost, and the process provided by the invention can be widely applied to the fields of SEDs (electron-emitter displays), molecular devices and the like.
Description
Technical field
The invention belongs to technical field of micro-nano manufacture, the template that is specifically related to a kind of nano-seam is aimed at impression preparation technology.
Background technology
Nano-seam is because in the special electronic effect of quantum yardstick, at surface-conduction-electron emission display SED, and molecular switch, molecular transistors equimolecular device aspect has important use.And the preparation technology of nano-seam retrains SED and molecular device large-scale application and fast-developing key factor just.At present, the main method of conventional preparation nano-seam has PSTM method, little processing method, electromigration and electrochemical process etc.PSTM method wherein, electromigration and electrochemical process need complicated control system to come the monitoring pressure or the variation of electrical conductivity to control the formation of nano-seam; Little processing method relates to beamwriter lithography and ion beam etching, and process equipment is accurate expensive, complicated operation.In general, conventional nano-seam preparation method needs expensive working equipment or complicated technological process, has greatly limited the preparation efficiency of nano-seam.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of template of nano-seam to aim at impression preparation technology, do not need expensive working equipment or complicated technological process, can on the rigid material film, prepare nano-seam.
For achieving the above object, the technical scheme that the present invention takes is:
A kind of template of nano-seam is aimed at impression preparation technology, may further comprise the steps:
The first step is carried out the preparation of rigid substrate, flexible material and rigid material three-decker, and rigid substrate is positioned at bottom; Flexible material is positioned at the intermediate layer, and rigid material is positioned at top layer, and rigid substrate is melten glass or metallic plate; Flexible material is SU8 glue or epoxy resin, and rigid material is that thickness is the metal material or the semi-conducting material of Nano grade, according to single nano-seam preparation and the preparation of nano-seam array structure; The rigid material layer of top layer can be divided into equal one deck and patterned layer; All the top layer rigid material film of one deck is an integral layer, does not have patterned structures, and once impression forms a nano-seam; The top layer stiffness films material of patterned layer adopts photoetching, etching technics to form certain graphic structure, and once impression forms the nano-seam array,
Second step; Adopt template to aim at impression; Nano-seam structure according to different prepares corresponding impression block; Adopting Alignment Process to make template apply external pressure in the position of needs generation nano-seam impresses; Single nano-seam technology only needs first flat board; Utilize Alignment Process to guarantee that plate edge parallels with the position that produces nano-seam, the impression of exerting pressure can obtain single nano-seam structure in desired location; In the preparation of nano-seam array structure, impression block is graphical template, and template is protruding to produce the nano-seam position alignment with desire, and the impression of exerting pressure can obtain array nano-seam structure,
The 3rd step, utilize the second dull and stereotyped secondary to aim at and exert pressure, utilize second flat board that whole top layer rigid material film nano crack structure graph area is exerted pressure, make the nano-seam alignment on the thin-film material that misplaces that ruptures, further reduce the spacing of nano-seam.
Because the present invention adopts the template of nano-seam to aim at impression; Cause the flexible material layer distortion; The fracture of top layer rigid material film forms single nano-seam or nano-seam array, can effectively break through technological process complicated among the conventional nano-seam preparation technology and expensive process equipment; The nano-seam structure can be prepared cheaply, aspects such as SED display and molecular device can be widely used in.
Description of drawings:
Fig. 1 is the sketch map of rigid substrate of the present invention, flexible material and rigid material three-decker.
Fig. 2 is the sketch map of the three-decker of top of the present invention rigid material layer patternization.
Fig. 3 for the present invention adopt first flat board with the sketch map that produces single nano-seam position alignment impression.
The sketch map of Fig. 4 graphical template aligning impression for the present invention adopts.
Fig. 5 aims at the nano-seam array structure sketch map that impression obtains for the graphical template of the present invention.
The sketch map that Fig. 6 adopts second flat board that whole patterned structural area secondary is exerted pressure for the present invention.
Fig. 7 is the present invention's nano-seam structural representation that nano-seam alignment obtains that graphically misplaces.
The specific embodiment
Below in conjunction with accompanying drawing the present invention is described in detail.
A kind of template of nano-seam is aimed at impression preparation technology, may further comprise the steps:
The first step is carried out the preparation of rigid substrate 1, flexible material 2 and rigid material 3 three-deckers, and rigid substrate 1 is positioned at bottom; Flexible material 2 is positioned at the intermediate layer, and rigid material 3 is positioned at top layer, and rigid substrate 1 is melten glass or metallic plate; Flexible material 2 is SU8 glue or epoxy resin, and rigid material 3 is the metal material or the semi-conducting material of Nano grade for thickness, according to single nano-seam preparation and the preparation of array nano-seam structure; The rigid material layer of top layer can be divided into equal one deck and patterned layer; All the top layer rigid material film of one deck is an integral layer, does not have patterned structures, and once impression forms a nano-seam; The top layer stiffness films material of patterned layer adopts photoetching, etching technics to form certain graphic structure, and once impression forms the nano-seam array,
Illustrate the detailed preparation process of equal one deck three-decker below: select melten glass as rigid substrate 1; Spin coating one deck flexible material 2 above that; Flexible material 2 is a SU8 glue; Adopt sputter or evaporation process to prepare the rigid material 3 of one deck Nano grade then, rigid material 3 is metallic chromium layer, and is as shown in Figure 1;
The detailed preparation process of graphical three-decker: on equal one deck three-decker basis, further adopt photoetching, etching technics, on metallic chromium layer, process corresponding cyclic array structure, as shown in Figure 2,
Second step, adopt template to aim at impression, prepare corresponding impression block according to different nano-seam structures; Adopting Alignment Process to make template apply external pressure in the position of needs generation nano-seam impresses; Single nano-seam technology only needs first flat board 4, utilizes Alignment Process to guarantee that first dull and stereotyped 4 edges and the position that produces nano-seam parallel the impression of exerting pressure; Can make flexible material 2 distortion in desired location; Rigid material 3 distortion fracture dislocation obtain single nano-seam structure, and are as shown in Figure 3; In the preparation of nano-seam array structure, impression block is graphical template 5, its protruding and desire generation nano-seam position alignment, and the impression of exerting pressure, rigid material 3 compressive deformations dislocation fracture can obtain array nano-seam structure, and is as shown in Figure 4; The characteristic size of the nano-seam structure that obtain this moment is w1, and is as shown in Figure 5,
The 3rd step; Utilize second dull and stereotyped 6 secondaries to aim at and exert pressure, utilize second dull and stereotyped 6 pairs of whole top layer rigid material film nano crack structure graph area to exert pressure, make the nano-seam alignment on the thin-film material that misplaces that ruptures; Further reduce the spacing of nano-seam, as shown in Figure 6; The nano-seam feature size that form this moment is w2, and as shown in Figure 7, characteristic size w2 is less than characteristic size w1.
It is different with the rigidity of rigid material that the present invention has made full use of flexible material; Utilize and aim at the fracture that impression is realized the stiffness films material, realize the preparation of single nano-seam or nano-seam array with this, simultaneously; Take the second dull and stereotyped secondary impression; Further reduce the spacing of nano-seam, this kind process has been avoided complicated flow process and the expensive process equipment among traditional nano-seam preparation technology, and is easy to operation; Need not extra detection system, once aim at impression and can realize the single nano-seam or the preparation of nano-seam array.
Claims (1)
1. the template of a nano-seam is aimed at impression preparation technology, it is characterized in that, may further comprise the steps:
The first step is carried out the preparation of rigid substrate, flexible material and rigid material three-decker, and rigid substrate is positioned at bottom; Flexible material is positioned at the intermediate layer, and rigid material is positioned at top layer, and rigid substrate is melten glass or metallic plate; Flexible material is SU8 glue or epoxy resin, and rigid material is that thickness is the metal material or the semi-conducting material of Nano grade, according to single nano-seam preparation and the preparation of nano-seam array structure; The rigid material layer of top layer can be divided into equal one deck and patterned layer; All the top layer rigid material film of one deck is an integral layer, does not have patterned structures, and once impression forms a nano-seam; The top layer stiffness films material of patterned layer adopts photoetching, etching technics to form certain graphic structure, and once impression forms the nano-seam array,
Second step; Adopt template to aim at impression; Nano-seam structure according to different prepares corresponding impression block; Adopting Alignment Process to make template apply external pressure in the position of needs generation nano-seam impresses; Single nano-seam technology only needs first flat board; Utilize Alignment Process to guarantee that plate edge parallels with the position that produces nano-seam, the impression of exerting pressure can obtain single nano-seam structure in desired location; In the preparation of nano-seam array structure, impression block is graphical template, and template is protruding to produce the nano-seam position alignment with desire, and the impression of exerting pressure can obtain array nano-seam structure,
The 3rd step, utilize the second dull and stereotyped secondary to aim at and exert pressure, utilize second flat board that whole top layer rigid material film nano crack structure graph area is exerted pressure, make the nano-seam alignment on the thin-film material that misplaces that ruptures, further reduce the spacing of nano-seam.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110191568.2A CN102320554B (en) | 2011-07-11 | 2011-07-11 | Process for preparing nano seam by virtue of template alignment impressing |
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| CN201110191568.2A CN102320554B (en) | 2011-07-11 | 2011-07-11 | Process for preparing nano seam by virtue of template alignment impressing |
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| CN102320554A true CN102320554A (en) | 2012-01-18 |
| CN102320554B CN102320554B (en) | 2014-05-28 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4325779A (en) * | 1979-04-17 | 1982-04-20 | Beatrice Foods Co. | Method for shaping and finishing a workpiece |
| US4576678A (en) * | 1979-07-25 | 1986-03-18 | Vlsi Technology Research Association | Pattern forming method |
| US4606788A (en) * | 1984-04-12 | 1986-08-19 | Moran Peter L | Methods of and apparatus for forming conductive patterns on a substrate |
| US5277749A (en) * | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
-
2011
- 2011-07-11 CN CN201110191568.2A patent/CN102320554B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4325779A (en) * | 1979-04-17 | 1982-04-20 | Beatrice Foods Co. | Method for shaping and finishing a workpiece |
| US4576678A (en) * | 1979-07-25 | 1986-03-18 | Vlsi Technology Research Association | Pattern forming method |
| US4606788A (en) * | 1984-04-12 | 1986-08-19 | Moran Peter L | Methods of and apparatus for forming conductive patterns on a substrate |
| US5277749A (en) * | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
Non-Patent Citations (2)
| Title |
|---|
| 万景: "三层结构纳米压印及其在模板复制和硅纳米线传感器制备中的应用", 《中国优秀硕士学位论文电子期刊库》, 25 May 2009 (2009-05-25), pages 31 - 49 * |
| 刘红忠 等: "纳米压印光刻中的多步定位研究", 《西安交通大学学报》, 10 March 2006 (2006-03-10) * |
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