CN102222653A - Dimpling block structure - Google Patents
Dimpling block structure Download PDFInfo
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- CN102222653A CN102222653A CN2010101644224A CN201010164422A CN102222653A CN 102222653 A CN102222653 A CN 102222653A CN 2010101644224 A CN2010101644224 A CN 2010101644224A CN 201010164422 A CN201010164422 A CN 201010164422A CN 102222653 A CN102222653 A CN 102222653A
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- layer
- metal
- dimpling block
- block structure
- protective layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The invention discloses a dimpling block structure which possesses a concave having an automatic aligning efficacy. The dimpling block structure at least comprises at least a bonding pad, a protection layer, an annular metal layer and a central recessed disc shape metal structure, wherein the boding pad is located on a semiconductor basement, the protection layer is located on the boding pat and covers a part of the bonding pad, the annular metal layer is located in an opening of the protection layer and at least covers the side wall and the edge of the opening, the central recessed disc shape metal structure is located at the hollow part of the annular metal layer and covers a part of the annular metal layer, the disc shape metal structure at least comprises a seed layer located on the annular metal layer, a metal bottom layer located on the seed layer and a solder layer located on the metal bottom layer. The central recessed structure is utilized in the dimpling block structure to assist in achieving a precise high contraposition degree with a corresponding dimpling block.
Description
Technical field
The present invention relates to a kind of dimpling block structure, and particularly a kind of self-aligning dimpling block structure.
Background technology
At present in the application of ultra fine-pitch dimpling piece encapsulation; usually can be not good because of (1) equipment contraposition ability, (2) projection uniformity is bad, (3) projection tin quantity not sufficient; and problem such as (4) projection solderability is not good and cause the aggravation of contraposition shift phenomenon, and then have a strong impact on the bump bond ability.
Because the tin amount of the dimpling piece of ultra fine-pitch is far below chip-covered boss, though the little contact that has been offset through repeatedly reflow (Reflow) heat treatment, last lower protruding block can not retract the tram because of the capillarity of scolding tin yet.Little contact of skew not only can cause the bond strength of contact to descend, and more can influence its contact reliability.
In the application of reality, if the problem that can promote the contraposition precision or avoid contraposition to be offset, and then improve little contact joint capacity and reliability, be to have high industrial utilization.
Summary of the invention
The objective of the invention is to disclose a kind of dimpling block structure, can promote the contraposition precision, and avoid the contraposition skew, significantly improve little contact joint capacity and reliability, and be easy to industrialization production.
For achieving the above object, technical solution of the present invention is:
A kind of dimpling block structure comprises being positioned at the suprabasil at least one weld pad of semiconductor, a protective layer, the recessed plate-like metal structure of an endless metal layer and central authorities.This protective layer is positioned on this weld pad and this weld pad of cover part, and this endless metal layer, is arranged in an opening of this protective layer, covers the sidewall of this opening and this protective layer of part of this edge of opening at least.In addition, this recessed plate-like metal structure of central authorities is arranged on this endless metal layer, is positioned at this endless metal layer vacancy and this endless metal layer of cover part.Wherein this plate-like metal structure comprises that at least a kind of layer is positioned on this endless metal layer, a metal back layer is positioned on this kind layer and is positioned on this metal back layer with a solder layer.
A kind of dimpling block structure comprises being positioned at the suprabasil at least one weld pad of semiconductor, a protective layer, a kind of layer and an annular metal structure.This protective layer is positioned on this weld pad and has an annular opening and expose this weld pad of part, and this kind layer is arranged in this annular opening of this protective layer, this protective layer of part at the sidewall of conformal this annular opening of covering, bottom surface and this annular opening edge.This annular metal structure is positioned on this kind layer, and wherein this annular metal structure comprises that at least a metal back layer is positioned on this kind layer, a metal level is positioned on this metal back layer and is positioned on this metal level with a solder layer.
Dimpling block structure of the present invention utilizes its central sunk structure, assists to reach high accurately contraposition degree with corresponding dimpling piece, and very high little contact joint capacity and reliability are arranged.
Description of drawings
Figure 1A～Fig. 1 E illustrate is the dimpling block structured manufacturing process profile of one embodiment of the invention.
Fig. 2 A illustrate is the dimpling block structured generalized section of one embodiment of the invention.
Fig. 2 B illustrate is the dimpling block structured part schematic perspective view of one embodiment of the invention.
Fig. 3 A～Fig. 3 B illustrate is the dimpling block structured part manufacturing process profile of another embodiment of the present invention.
Fig. 4 A illustrate is the dimpling block structured generalized section of another embodiment of the present invention.
Fig. 4 B illustrate is the dimpling block structured part schematic perspective view of another embodiment of the present invention.
Fig. 5 A～Fig. 5 C illustrate is the dimpling block structured part manufacturing process profile of another embodiment of the present invention.
Fig. 6 A illustrate is the dimpling block structured generalized section of another embodiment of the present invention.
Fig. 6 B illustrate is the dimpling block structured part schematic perspective view of another embodiment of the present invention.
The main element symbol description
10,40,60: the dimpling block structure
100,300,400,500,600: substrate
100a: active surface
102,102a, 302,402,502,602: weld pad
104,104a, 304a, 404a, 504a, 604a: protective layer
105,107,109,505: the patterning photoresist layer
106,306,406,506,606: opening
108,308,408,508,608: metal level
110,410,510,610: plant layer
112,412,512,612: metal back layer
114,414,514,614: solder layer
620: the annular metal structure
Embodiment
For above-mentioned and further feature of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Figure 1A～Fig. 1 E illustrate is the dimpling block structured manufacturing process profile of one embodiment of the invention.
Please refer to Figure 1A; one substrate 100 at first is provided; this substrate 100 for example is semiconductor disk or chip; this substrate 100 has an active surface 100a; and also have a protective layer 104 and a plurality of weld pad 102 (only show wherein two representatives) in this substrate 100, all be configured on the active surface 100a of this substrate 100.And on this protective layer 104, form the photoresist layer 105 of a patterning.Wherein the material of weld pad 102 for example is an aluminium.
With reference to Figure 1B, do photomask with this patterning photoresist layer 105 and carry out an etching step, and in protective layer 104 and weld pad 102, form a plurality of openings 106 and expose this substrate 100 of part, form patterned protective layer 104a and weld pad 102a.Wherein, the degree of depth of opening for example is about 5～50 microns, and the shape of opening 106 is not limited to circular port, also can be square or polygonal hole, and the size of the big or small visual weld pad 102 of opening 106 or follow-up size of lug and adjust.This etching step can be in two stages respectively etching remove protective layer 104 and weld pad 102, can also remove protective layer 104 and weld pad 102 by one step.This etching step for example comprises the anisotropic etching step.Afterwards, remove this patterning photoresist layer 105.
Please refer to Fig. 1 C, after this protective layer 104a upward forms the photoresist layer 107 of another patterning, form a metal level 108 and cover the sidewall of opening 106 and near the partial protection layer 104a the opening.This metal level 108 for example is a formed nickel metal or the nickel alloy layer of electroless plating, has the about 3-5 micron of thickness.This metal level 108 it seems that from the upward angle of visibility degree being is a loop configuration, covers the sidewall and the edge of opening 106, but exposed portions serve substrate 100.
With reference to Fig. 1 D, remove this patterning photoresist layer 107 after, in substrate 100, cover (blanketly) deposition comprehensively and form a kind of layer 110, cover metal level 108, protective layer 104a and part by substrate 100 that opening exposed.Wherein plant the material of layer 110 such as being titanium, titanium-tungsten, titanium tungsten copper, titanium copper or chromium.But,, also can omit this step if follow-up each layer that form do not need kind of a layer.
With reference to Fig. 1 E, on this kind layer 110, form the photoresist layer 109 of another patterning, expose the kind layer 110 of opening 106 positions.Afterwards, on the kind layer 110 that exposes, form a metal back layer 112 and a solder layer 114 in regular turn.The method that forms metal back layer 112 comprises the mode of sputter or plating, and wherein the material of metal back layer 112 is such as being copper or monel, and metal back layer 112 has about 3 microns of thickness.The method that forms solder layer 114 comprises the mode of plating, and wherein the material of solder layer 114 is such as being tin, sn-ag alloy or leypewter, and solder layer 114 has the about 5-10 micron of thickness.Because the existence of opening 106, cause follow-up be formed in the opening 106 with protective layer 104a on metal level 108, plant layer 110, metal back layer 112 all has height fall with solder layer 114, and has a recess C in the central authorities of opening 106.Decide on the degree of depth of opening 106 and the thickness of follow-up each layer, the general degree of depth of recess C and is positioned at the central authorities of opening 106 positions about about 10 microns.Certainly its degree of depth and shape also can need and be adjusted according to design.Owing to have recess C, this metal back layer 112 it seems to be to be a dishful of shape or disk-like structure with solder layer 114 from the upward angle of visibility degree.
In follow-up encapsulation step, little contact of other chip (dimpling piece) can slip into recess C and have the effect of contraposition, and in self-aligning mode, reaches good electric connection and help to strengthen bond strength.
The formation step of above-mentioned each layer only is that the person can know by inference easily but have the general knowledge in this technical field for example, those formation orders and equal optical pickups design of step or arts demand change.The application and non-limiting manufacture method of the present invention only limit to this.
Fig. 2 A illustrate is the dimpling block structured generalized section of one embodiment of the invention.Fig. 2 B illustrate is the dimpling block structured part schematic perspective view of one embodiment of the invention.
Please refer to Fig. 2 A, Fig. 2 B, the dimpling block structure 10 that is formed in the substrate 100 comprises annular weld pad 102a, protective layer 104a, endless metal layer 108, plants layer 110, metal back layer 112 and solder layer 114.From Fig. 2 A, Fig. 2 B, protective layer 104a is covered on the annular weld pad 102a, and endless metal layer 108 is arranged in the opening 106 of protective layer 104a and annular weld pad 102a and cover the sidewall and the edge of opening 106, but exposed portions serve substrate 100.Kind layer 110 is positioned at and covers part endless metal layer 108 on the endless metal layer 108, and covers 108 exposed portions serve substrate 100 of endless metal layer.Metal back layer 112 then is positioned on kind of the layer 110 with the disk-like structure of solder layer 114, and covers part endless metal layer 108.Since follow-up be formed in the opening 106 with protective layer 104a on metal level 108, plant layer 110, metal back layer 112 all has height fall with solder layer 114, and dimpling block structure 10 has a recess C in the central authorities of opening 106.Also kind layer 110, metal back layer 112 and the solder layer 114 of phase storehouse can be considered as the plate-like metal structure of a concavity, be positioned on the annular metal layer 108 of hollow.
Be to be example with the circular open, but opening 106 can be square or polygonal hole herein.
According to another embodiment of the present invention, can adjust the step of Figure 1B after Figure 1A step that continues, as shown in Figure 3A, change the design of this patterning photoresist layer and do photomask with this patterning photoresist layer, etch protection layer 304 is until exposing weld pad 302.Just only in protective layer 304, form a plurality of circular opening 306 (only showing that one of them is an example) and form patterned protective layer 304a.Wherein, the shape of opening 306 is not limited to circular ring-type, also can be square or polygonal circular opening.Afterwards, in circular opening 306, go up formation one metal level 308, cover the sidewall of opening 306 and near the partial protection layer 304a the opening with this protective layer 304a.This metal level 308 for example is a formed nickel metal or the nickel alloy layer of electroless plating, has the about 3-5 micron of thickness.This metal level 308 it seems that from the upward angle of visibility degree being is a loop configuration, cover the sidewall and the edge of opening 306, but protective layer 304a is exposed in the centre.Follow-up making flow process is similar to the step of Fig. 1 D-1E, and forms the dimpling block structure.
Fig. 4 A illustrate is the dimpling block structured generalized section of another embodiment of the present invention.Fig. 4 B illustrate is the dimpling block structured part schematic perspective view of another embodiment of the present invention.
Please refer to Fig. 4 A, Fig. 4 B, the dimpling block structure 40 that is formed in the substrate 400 comprises weld pad 402, protective layer 404a, endless metal layer 408, plants layer 410, metal back layer 412 and solder layer 414.From Fig. 4 A, Fig. 4 B; protective layer 404a is positioned on the weld pad 402 and exposes part of solder pads 402; and on the opening 406 that endless metal layer 408 is arranged in protective layer 404a and the weld pad 402, and cover the sidewall and the edge of opening of opening 406, but central exposed portions serve protective layer 404a.Kind layer 410 is positioned at and covers part endless metal layer 408 on the endless metal layer 408, and covers 408 exposed portions serve protective layer of endless metal layer 404a.Metal back layer 412 then is positioned on kind of the layer 410 with the disk-like structure of solder layer 414, and covers part endless metal layer 408.Because the height of metal level 408, the kind layer 410 of follow-up formation, metal back layer 412 all have height fall with solder layer 414, and dimpling block structure 40 has a recess C in the central authorities of opening 406.
Because the dimpling block structure has the concavity place, and the effect of automatic contraposition is arranged herein.If the material of protective layer 404a for example is pi (polyimide; PI) time, then being positioned at weld pad central authorities protective layer more can provide stress buffer, strengthens the projection overall structure.In addition; the also replaceable protective layer that is positioned at annular opening central authorities is low resistance metal material (for example gold an etc.) material; because its material by outside higher resistance value surrounds, this low resistance block can effectively improve the phenomenon of current crowding, and promotes anti-electronics and migrate characteristic.
Please refer to Fig. 5 A; according to another embodiment of the present invention; can change the manufacturing process order; directly after Fig. 3 A step prior to protective layer 504a on a kind of layer of conformal formation 510 protective mulch 504a and weld pad 502; and form a patterning photoresist layer 505 on kind of layer 510 and protective layer 504a, shown in Fig. 5 A.But,, also can omit this step if follow-up each layer that form do not need kind of a layer.Then, shown in Fig. 5 B, in the opening 506 of patterning photoresist layer 505, form metal back layer 512, metal level 508 and solder layer 514 in regular turn.Wherein the material of metal back layer 512 is such as being copper or monel, and metal back layer 512 has about 3 microns of thickness.This metal level 508 for example is to electroplate a formed nickel metal or a nickel alloy layer, has the about 3-5 micron of thickness.The material of solder layer 514 has the about 5-10 micron of thickness such as being tin, sn-ag alloy or leypewter.It seems that from last apparent direction metal back layer 512, metal level 508 are to constitute an annular metal structure to be arranged in opening 506 with solder layer 514.
Afterwards, shown in Fig. 5 C, remove patterning photoresist layer 505, and etching removes not by metal back layer 512, metal level 508 and the kind layer 510 that solder layer 514 is covered, carry out a reflow step then, and solder layer 514 is melted and the surface becomes slick and sly.
Fig. 6 A illustrate is the dimpling block structured generalized section of another embodiment of the present invention.Fig. 6 B illustrate is the dimpling block structured part schematic perspective view of another embodiment of the present invention.
Please refer to Fig. 6 A, Fig. 6 B, be formed at kind layer 610, metal back layer 612, metal level 608 and solder layer 614 that dimpling block structure 60 in the substrate 600 comprises weld pad 602, protective layer 604a, is arranged in the opening 606 of protective layer 604a.From Fig. 6 A, Fig. 6 B; protective layer 604a is positioned on the weld pad 602 and exposes part of solder pads 602; and plant on annular opening 606 that layer 610 is arranged in protective layer 604a and the weld pad 602; and the sidewall and the edge of opening of covering opening 606, but do not cover the annular opening 606 central exposed portions serve protective layer 604a of institute.Metal back layer 612, metal level 608 are positioned on kind of the layer 610 with 620 on the annular metal structure that solder layer 614 storehouses form.Because annular metal structure 620 has height fall with its middle protective layer 604a that is exposed, dimpling block structure 60 has a recess C equally in the central authorities of metal structure 620.
Therefore the dimpling block structure of the embodiment of the invention designs in central authorities and has a recess, and can help the contraposition with the little contact of other projection in follow-up engaging process, and then reaches automatic aligning and the purpose of improving bond strength, the lifting production reliability.In addition, manufacturing process proposed by the invention and existing process compatible need not add additional step or use special material, so the cost of element does not increase.In addition, visual product design needs, and adjusting process step and collocation difformity design are more flexiblely made the dimpling block structure.
Dimpling block structure of the present invention promotes alignment accuracy and the purpose of strengthening bond strength applicable to high density or ultra fine-pitch (less than 50 microns) connected structure and reach.
Spill dimpling block structure provided by the present invention is particularly suitable for being arranged in little contact encapsulating structure of ultra fine-pitch (less than 50 microns), or is applied to multi-chip stack packaging structure or the high density encapsulating structure that engages.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion as the protection range person of defining that look claims.
Claims (16)
1. dimpling block structure is applicable to it is characterized in that in the encapsulating structure that described projection cube structure comprises at least:
At least one weld pad is positioned in the semiconductor substrate;
One protective layer is positioned on this weld pad and this weld pad of cover part;
One endless metal layer is arranged in an opening of this protective layer, covers the sidewall of this opening and this protective layer of part of this edge of opening at least; And
The recessed plate-like metal structure of one central authorities, be arranged on this endless metal layer, be positioned at this endless metal layer vacancy and this endless metal layer of cover part, wherein this plate-like metal structure comprises at least that a metal back layer is positioned on this endless metal layer and is positioned on this metal back layer with a solder layer.
2. dimpling block structure as claimed in claim 1 is characterized in that described weld pad is a hollow and annular, and this plate-like metal structure covers this semiconductor-based end that this endless metal layer hollow place exposes.
3. dimpling block structure as claimed in claim 1 is characterized in that, this opening of described protective layer is that an annular opening exposes this weld pad of part, and this plate-like metal structure covers this protective layer that this endless metal layer hollow place exposes.
4. dimpling block structure as claimed in claim 1 is characterized in that the material of described annular metal layer comprises nickel metal or nickel alloy.
5. dimpling block structure as claimed in claim 1 is characterized in that, described plate-like metal structure more comprises a kind of layer between this endless metal layer and this metal back layer, and the material of this kind layer comprises titanium, titanium-tungsten, aluminium or chromium.
6. dimpling block structure as claimed in claim 1 is characterized in that the material of described metal back layer comprises copper or monel.
7. dimpling block structure as claimed in claim 1 is characterized in that the material of described solder layer comprises tin, leypewter and sn-ag alloy.
8. dimpling block structure as claimed in claim 1 is characterized in that, the material of described protective layer be pi Huo Ben Ring fourth vinegar (Benzocyclobutene, BCB).
9. dimpling block structure as claimed in claim 3 is characterized in that, the material of described this protective layer between this plate-like metal structure and this endless metal interlayer is gold, copper or other metal material.
10. dimpling block structure is applicable to it is characterized in that in the encapsulating structure that described projection cube structure comprises at least:
At least one weld pad is positioned in the semiconductor substrate;
One protective layer is positioned on this weld pad, and wherein this protective layer has an annular opening and exposes this weld pad of part;
And
One annular metal structure; be positioned on this protective layer and be positioned on this weld pad, wherein this annular metal structure comprise at least a metal back layer be positioned on this weld pad and partly be positioned on this protective layer, a metal level is positioned on this metal back layer and is positioned on this metal level with a solder layer.
11. dimpling block structure as claimed in claim 10 is characterized in that, comprises that more a kind of layer is arranged in this annular opening of this protective layer, this protective layer of part at the sidewall of conformal this annular opening of covering, bottom surface and this annular opening edge.
12. dimpling block structure as claimed in claim 11 is characterized in that, described material of planting layer comprises titanium, titanium-tungsten, aluminium or chromium.
13. dimpling block structure as claimed in claim 10 is characterized in that the material of described metal level comprises nickel metal or nickel alloy.
14. dimpling block structure as claimed in claim 10 is characterized in that the material of described metal back layer comprises copper or monel.
15. dimpling block structure as claimed in claim 10 is characterized in that the material of described solder layer comprises tin, leypewter or sn-ag alloy.
16. dimpling block structure as claimed in claim 10 is characterized in that, the material of described protective layer be pi Huo Ben Ring fourth vinegar (Benzocyclobutene, BCB).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101644224A CN102222653A (en) | 2010-04-15 | 2010-04-15 | Dimpling block structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101644224A CN102222653A (en) | 2010-04-15 | 2010-04-15 | Dimpling block structure |
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| CN102222653A true CN102222653A (en) | 2011-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010101644224A Pending CN102222653A (en) | 2010-04-15 | 2010-04-15 | Dimpling block structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715107A (en) * | 2012-10-09 | 2014-04-09 | 矽品精密工业股份有限公司 | Method for manufacturing package stack structure |
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|---|---|---|---|---|
| US6375062B1 (en) * | 2000-11-06 | 2002-04-23 | Delphi Technologies, Inc. | Surface bumping method and structure formed thereby |
| US20020111009A1 (en) * | 2001-02-15 | 2002-08-15 | Megic Corporation | Reliable metal bumps on top of I/O pads after removal of test probe marks |
| CN1503328A (en) * | 2002-11-25 | 2004-06-09 | 矽品精密工业股份有限公司 | Semiconductor device with welding block button metallization structure and mfg process |
| CN101110377A (en) * | 2006-07-21 | 2008-01-23 | 日月光半导体制造股份有限公司 | Method for forming soldering projection |
| CN101617396A (en) * | 2007-03-23 | 2009-12-30 | 英特尔公司 | Copper die bumps with electromigration cap and plated solder |
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2010
- 2010-04-15 CN CN2010101644224A patent/CN102222653A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6375062B1 (en) * | 2000-11-06 | 2002-04-23 | Delphi Technologies, Inc. | Surface bumping method and structure formed thereby |
| US20020111009A1 (en) * | 2001-02-15 | 2002-08-15 | Megic Corporation | Reliable metal bumps on top of I/O pads after removal of test probe marks |
| CN1503328A (en) * | 2002-11-25 | 2004-06-09 | 矽品精密工业股份有限公司 | Semiconductor device with welding block button metallization structure and mfg process |
| CN101110377A (en) * | 2006-07-21 | 2008-01-23 | 日月光半导体制造股份有限公司 | Method for forming soldering projection |
| CN101617396A (en) * | 2007-03-23 | 2009-12-30 | 英特尔公司 | Copper die bumps with electromigration cap and plated solder |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715107A (en) * | 2012-10-09 | 2014-04-09 | 矽品精密工业股份有限公司 | Method for manufacturing package stack structure |
| CN103715107B (en) * | 2012-10-09 | 2017-04-19 | 矽品精密工业股份有限公司 | Method for manufacturing package stack structure |
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Application publication date: 20111019 |