CN102211752A - Driving element, driving element array module and structure of driving element array module - Google Patents
Driving element, driving element array module and structure of driving element array module Download PDFInfo
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- CN102211752A CN102211752A CN2010101419245A CN201010141924A CN102211752A CN 102211752 A CN102211752 A CN 102211752A CN 2010101419245 A CN2010101419245 A CN 2010101419245A CN 201010141924 A CN201010141924 A CN 201010141924A CN 102211752 A CN102211752 A CN 102211752A
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Abstract
The invention provides a driving element, a driving element array module and a structure of the driving element array module. The driving element comprises a first suspending beam set, a second suspending beam set and an electrically conductive suspending beam set; when a potential difference or a like-polarity potential is applied between the first suspending beam set and the second suspending beam set, because the electric field force acting on the first suspending beam set is greater than the critical force of the deformation of the first suspending beam set, the first suspending beam set moves and contacts the electrically conductive suspending beam set, thus the electrically conductive suspending beam set has the same potential with the first suspending beam set; and when the electric field force between the first suspending beam set and the second suspending beam set is less than the critical force of the deformation of the first suspending beam set, the first suspending beam set restores to the original shape.
Description
Technical field
The present invention relates to a kind of driving element, and be particularly related to a kind of novel driving element and the structure of driving element array module and this driving element array module.
Background technology
In traditional thin film transistor (TFT) manufacture craft, mainly all based on inorganic material silicon, germanium, main cause is that inorganic material compares with organic semiconductor, its carrier transport factor (Mobility) differs and reaches three more than the rank, thus most active displays all be with inorganic semiconductor particularly non-crystalline silicon (a-Si) thin film transistor (TFT) as driving element.Because non-crystalline silicon (a-Si) thin film transistor (TFT) has advantages such as control picture element signal propagation function, low temperature manufacture craft, be in the market main flow as driving element with non-crystalline silicon (a-Si) thin film transistor (TFT).
Yet, for carry the reaction time faster display medium and more complicated signal handle, the demand of high switch current ratio, carrier transport factor or power saving, all follow-on driving element is required to be possessed.Though some improves the mode of driving element characteristic at present, compound semiconductor as different levels of doping, the polycrystalline SiTFT of low temperature manufacture craft etc., but still can not improve at aforesaid demand effectively because of problem of equipment cost, yield or the like.
Summary of the invention
At the problems referred to above, purpose of the present invention is exactly that a kind of driving element that addresses the above problem is being provided.
A further object of the present invention provides the array module that above-mentioned driving element forms.
The present invention proposes a kind of driving element, and it comprises the first overarm arm group, the second overarm arm group and conduction overarm arm group.When between the first overarm arm group and the second overarm arm group, applying a potential difference or same polarity current potential, the first overarm arm group is because it is subjected to the critical force of electric field force greater than itself deformation, the first overarm arm group moves and touches this conduction overarm arm group, allows this conduction overarm arm group have and the same current potential of the first overarm arm group.When electric field force between the first overarm arm group and the second overarm arm group during less than the critical force of the deformation of the first overarm arm group own, the first arm group of hanging oneself from a beam is returned to original shape.
In preferred embodiment of the present invention, the first above-mentioned overarm arm group comprises the first overarm arm and the first overarm arm strong point, and the described first overarm arm strong point is positioned at an end of the first overarm arm, and it is wider than the first overarm arm; Above-mentioned conduction overarm arm group comprises the conduction overarm arm and the conduction overarm arm strong point, and conduction overarm arm is bending and extends the conduction overarm strong point, and conduction overarm arm one end is towards the first overarm crook of the arm folding; The second above-mentioned overarm arm group comprises the second overarm arm and is positioned at the second overarm arm strong point at the second overarm arm two ends, and the second overarm arm strong point is wider than the second overarm arm.
In preferred embodiment of the present invention, the first above-mentioned overarm arm, conduction overarm arm and the second overarm arm all are unsettled state under original state.
In preferred embodiment of the present invention, above-mentioned conduction overarm arm is mounted between first, second overarm arm group, when applying a potential difference between this first overarm arm and the second overarm arm, the first overarm arm moves and contacts conduction overarm arm to the second overarm arm direction.
In preferred embodiment of the present invention, the first above-mentioned overarm arm is mounted between the conduction overarm arm group and the second overarm arm group, when the first overarm arm group applied the same polarity current potential with the second overarm arm group, the first overarm arm moved and contacts the conduction arm of hanging oneself from a beam to the direction away from the second overarm arm.
The present invention also proposes a kind of driving element, it comprises the first overarm arm group, the second overarm arm group and is located at conduction overarm arm group between first, second overarm arm group, when the first overarm arm group and this second are hung oneself from a beam the potential difference that has between the arm group during less than a default value, the first overarm arm group does not contact with conduction overarm arm group, and when potential difference reached this default value, the first overarm arm group contacts with conduction overarm arm group so that the first overarm arm group has same potential with conduction overarm arm group.
In preferred embodiment of the present invention, the first above-mentioned overarm arm group comprises the first overarm arm and the first overarm arm strong point, and the described first overarm arm strong point is positioned at an end of the first overarm arm, and it is wider than the first overarm arm; Above-mentioned conduction overarm arm group comprises the conduction overarm arm and the conduction overarm arm strong point, and described conduction overarm arm is bending and extends the conduction overarm strong point, and conduction overarm arm one end is towards the first overarm crook of the arm folding; The second above-mentioned overarm arm group comprises the second overarm arm and is positioned at the second overarm arm strong point at the second overarm arm two ends, and the second overarm arm strong point is wider than the second overarm arm.
The present invention provides the array that comprises above-mentioned driving element module again, it comprises substrate, is located at a plurality of above-mentioned driving element, at least one scanline groups and at least one signal line group on the substrate, and those scanline groups and signal line group are electrically connected with a plurality of driving elements.
In preferred embodiment of the present invention, each above-mentioned scanline groups comprises the multi-strip scanning line, to connect the second overarm arm group that is positioned at a plurality of driving elements of delegation respectively.
In preferred embodiment of the present invention, each above-mentioned signal line group comprises many signal line, to connect the first overarm arm group of a plurality of driving elements that are positioned at same row respectively.
In preferred embodiment of the present invention, when scan line that is connected in each above-mentioned driving element and holding wire conducting, can form a potential difference or the first overarm arm and the second overarm arm between the first overarm arm of driving element and the second overarm arm and be applied with the same polarity current potential.
The present invention also provides the structure of the array module of aforementioned driving element, and it comprises substrate, the first metal layer, first insulating barrier, second metal level, second insulating barrier, sacrifice layer and the overarm arm that forms successively.
In preferred embodiment of the present invention, have contact hole on the above-mentioned sacrifice layer and second insulating barrier, this overarm arm contacts conducting by contact hole with second metal layer image.
Driving element of the present invention and array module combine the design of active driving element and the principle of MEMS.Because need be with silicon as semiconductor layer, so have the unexistent advantage of many amorphous silicon film transistors, for example high carrier transport factor makes it can be applied in the more treatment system of high speed, as image processing, the problem of leakage current makes it can have better switch current ratio, not only can solve some shortcomings of non-crystalline silicon (a-Si) thin film transistor (TFT), more can promote the characteristic of display, simplify manufacture craft, promote yield.
In addition, driving element of the present invention and array module use low temperature manufacture craft technology, can reduce the generation of problem in the manufacture craft etc., can also simplify the expenditure of original manufacturing process steps, minimizing cost, reach the advantage that promotes production capacity, these advantages make it have more competitiveness becomes follow-on driving element.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above and other objects of the present invention, feature and advantage can be become apparent, below especially exemplified by embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the stereogram of the driving element of better embodiment of the present invention.
Fig. 2 A is a driving element shown in Figure 1 vertical view in original state.
Fig. 2 B is a driving element shown in Figure 1 vertical view when applying a potential difference.
Fig. 3 A is the vertical view of the driving element of another better embodiment in original state.
Fig. 3 B is the vertical view of the driving element shown in Fig. 3 A when applying the same polarity current potential.
Fig. 4 is the schematic diagram of the array module of better embodiment of the present invention.
Fig. 5 A～5B is the layering manufacturing process schematic diagram of Fig. 4 along straight line BB ' cross section.
Fig. 6 A～6B is Fig. 4 another layering manufacturing process schematic diagram along straight line AA ' cross section.
The specific embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with drawings and Examples, to its specific embodiment of electronic installation, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
The present invention discloses a kind of liquid crystal display-driving element, it combines the design and MEMS (the Micro-Electro-Mechanical System of active driving element, MEMS) principle, the design of active driving element mainly is in order to control the start of pixel on its opposite position, and MEMS mainly is that electronics such as mechanically switch valve, brake, motor is integrated.
Figure 1 shows that the stereogram of driving element 100 of the present invention.Driving element 100 comprises the first overarm arm group 101, conduction overarm arm group 102 and the second overarm arm group 103.Wherein, the first overarm arm group 101 can be made by the metal or alloy material of non-crystalline silicon, any conduction, and it comprises the first overarm arm 104 and the first overarm arm strong point 107.The first overarm arm strong point 107 is positioned at an end of the first overarm arm 104, and its width is greater than the width of the first overarm arm 104.
Conduction overarm arm group 102 is located between the first overarm arm group 101 and the second overarm arm group 103.Conduction overarm arm group 102 can be any metal or alloy and makes, and it comprises the conduction overarm arm 105 and the conduction overarm arm strong point 108.Wherein, conduction overarm arm 105 is bending, and it extends the conduction overarm strong point 108, and an end is towards 104 bendings of the first overarm arm.
The second overarm arm group 103 can be non-crystalline silicon, the metal or alloy material of conduction is made arbitrarily, two the second overarm arm strong points 109 that it comprises the second overarm arm 106 and is positioned at the second overarm arm, 106 two ends.The second overarm arm strong point 109 is wider than the second overarm arm 106.
Fig. 2 A is depicted as the driving element 100 of the present invention's first better embodiment in the vertical view of original state.Under the original state, the first overarm arm 104, conduction overarm arm 105 and the second overarm arm 106 all are unsettled states.In the course of the work, can apply a current potential and be worse than between the first overarm arm 104 and the second overarm arm 106, thereby make the first overarm arm, 104 contact conduction overarm arms 105.
Shown in Fig. 2 B, the vertical view when applying a potential difference for driving element 100 of the present invention.When applying a current potential and be worse than between the first overarm arm 104 and the second overarm arm 106, wherein the signal of telecommunication is passed on the first overarm arm 104 and the second overarm arm 106 by the first overarm arm strong point 107 and the second overarm arm strong point 109 respectively.Direction to the second overarm arm 106 moves the first overarm arm 104 because the attraction of electric field is greater than the critical force of itself deformation, thereby touch adjacent conductive overarm arm 105, make the adjacent conductive overarm arm 105 and the first overarm arm 104 be short-circuited, thereby allow adjacent conductive overarm arm 105 have the current potential the same with the first overarm arm 104.When the electric field force that potential difference produced between the arm 106 is less than the critical force of first overarm arm 104 deformation own when the first overarm arm 104 and second overarm, the tension that this moment, the first overarm arm group, 101 desires own were replied reset conditions can spring back to original shape with the first overarm arm 104, more than promptly constitute a micro-electromechanical switch (MEMS switch) element.
The foregoing description also can be, when the above-mentioned first overarm arm group 101 and second is hung oneself from a beam the potential difference that has between the arm group 103 during less than a default value, the first overarm arm group 101 does not contact with conduction overarm arm group 102, and when the potential difference that has between the first overarm arm group 101 and the second overarm arm group 103 reached default value, the first overarm arm group 101 contacts with conduction overarm arm group 102 so that the first overarm arm group 101 and the second overarm arm group 103 have identical current potential.
Shown in Fig. 3 A and 3B, for the driving element 100a of another better embodiment of the present invention in the vertical view of original state.Wherein, the first overarm arm group 101a is located between the conduction overarm arm group 102a and the second overarm arm group 103a.Under the original state, the first overarm arm 104a, conduction overarm arm 105a and the second overarm arm 106a all are unsettled states.In the course of the work, can on the first overarm arm 104a and the second overarm arm 106a, apply a same polarity current potential respectively, thereby because the repulsive force of electric field between the first overarm arm 104a and the second overarm arm 106a makes the first overarm arm 104a contact conduction overarm arm 105a.
Shown in Fig. 3 B, vertical view when applying the same polarity current potential for driving element 100a all applies a positive voltage V+ or a negative voltage V one on the first overarm arm 104a and the second overarm arm 106a, the first overarm arm 104a is because the repulsive force of electric field moves to the direction away from the second overarm arm 106a greater than the critical force of itself deformation, thereby touch adjacent conductive overarm arm 105a, make the adjacent conductive overarm arm 105a and the first overarm arm 104a be short-circuited, thereby allow adjacent conductive overarm arm 105a have the same current potential with the first overarm arm 104a.When the electric field force that potential difference produced between the first overarm arm 104a and the second overarm arm 106a during less than the critical force of the deformation of the first overarm arm 104a own, the tension that the desire of first overarm arm group 101a this moment own is replied reset condition can spring back to original shape with the first overarm arm 104a, more than promptly constitute a micro-electromechanical switch (MEMS switch) element.
Figure 4 shows that the array module 300 that the driving element 100 among a plurality of above-mentioned first embodiment forms with array format, wherein each driving element 100 corresponding display panels (figure does not show) are gone up the pixel of relevant position.Array module 300 is formed on the substrate 301.Any makes substrate 301 by glass substrate or other transparency carrier.Array module 300 also comprises a plurality of scanline groups 302 and a plurality of signal line group 303.Each scanline groups 302 comprises the multi-strip scanning line, and connecting the second overarm arm group 103 be positioned at a plurality of driving elements 100 of delegation respectively, and adjacent driven element 100 is electrically connected by substrate 301.Each signal line group 303 comprises many signal line, to connect the first overarm arm group 101 of a plurality of driving elements 100 that are positioned at same row respectively.
When between the first overarm arm 104 of this driving element 100 and the second overarm arm 106, forming a potential difference (for example: when being connected in the scan line of driving element 100 and holding wire conducting), can form between the first overarm arm 104 and the second overarm arm 106 that a current potential is worse than this driving element 100.Wherein, the signal of telecommunication is passed on the first overarm arm 104 and the second overarm arm 106 by the first overarm arm strong point 107 and the second overarm arm strong point 109 respectively.Direction to the second overarm arm 106 moves the first overarm arm 104 because the attraction of electric field is greater than the critical force of the first overarm arm, 104 deformation own, thereby touch adjacent conductive overarm arm 105, make the adjacent conductive overarm arm 105 and the first overarm arm 104 be short-circuited, thereby allow adjacent conductive overarm arm 105 have the current potential the same with the first overarm arm 104.Potential difference between the first overarm arm 104 and the second overarm arm 106 is 0V, or the electrical field attraction that potential difference caused therebetween is less than the critical force of first overarm arm 104 deformation own (for example: design makes the scan line that is connected in driving element 100 and holding wire not be in same current potential or potential difference between the two during conducting less than a particular value), then the electrical field attraction of the first overarm arm 104 and the second overarm arm 106 can reduce, and therefore the 101 desires answers of the first overarm arm group own will spring back to original shape with the first overarm arm 104 for the tension of reset condition.Thereby,, control the start of pixel on its opposite position according to the scan line of driving element 100 connections and the break-make of holding wire.
Be appreciated that array module 300 also can be formed with array format by driving element 100a.Wherein, driving element 100a utilizes the repulsive force between the first overarm arm 104a and the second overarm arm 106a to realize its function.
Fig. 5 A～5B is depicted as the layering manufacturing flow chart of Fig. 4 along dotted line BB ' cross section, in order to the manufacturing process of the second overarm arm 106 to be described.At first on glass substrate, 400 plate the first metal layer (figure do not show), by forming the first metal layer figure 401 after the gold-tinted etching process, this the first metal layer can be the metal or alloy of any conduction, as silver (Ag), chromium (Cr), molybdenum chromium (MoCr) alloy, aluminium neodymium (AlNd) alloy, nickel boron (NiB) alloy etc.Then on the first metal layer figure 401, plate first insulating barrier, 402, the first insulating barriers 402 and can be silica (SiO2), silicon nitride (SiNx) etc.Come again, on first insulating barrier 402, form second metal level (figure does not show), also can be any conducting metal or alloy by forming second metal layer image, 403, the second metal levels after the gold-tinted etching process, as silver, chromium, molybdenum evanohm, aluminium neodymium alloy, ni-b alloy etc.Plate one second insulating barrier, 404, the second insulating barriers 404 on second metal layer image 403 again and can be silica, silicon nitride etc.In the present embodiment, plate second insulating barrier 404 and form a sacrifice layer 405 more afterwards, sacrifice layer 405 can be molybdenum, polymer (polymer) etc.Afterwards, dig out contact hole 4051 on the sacrifice layer 405 and second insulating barrier 404, form an overarm arm figure 406 again on sacrifice layer 405, overarm arm figure 406 can be the metal or alloy of non-crystalline silicon, any conduction etc.Overarm arm figure 406 is done with second metal layer image 403 by contact hole and is contacted conducting, at last sacrifice layer 405 is removed (release), promptly forms a micro-electromechanical switch (MEMS switch) element.And this whole making flow process can be finished by six road light shields.
Fig. 6 A～6B is depicted as Fig. 4 another manufacturing flow chart along the cross section of straight line AA '.The difference of itself and Fig. 5 is, on the basis of Fig. 5, has increased a conductive transparent layer 503 on second insulating barrier 404.At first on glass substrate, 400 plate the first metal layer (figure do not show), by forming the first metal layer figure 401 after the gold-tinted etching process, this the first metal layer can be the metal or alloy of any conduction, as silver (Ag), chromium (Cr), molybdenum chromium (MoCr) alloy, aluminium neodymium (AlNd) alloy, nickel boron (NiB) alloy etc.Then on the first metal layer figure 401, plate first insulating barrier, 402, the first insulating barriers 402 and can be silica (SiO2), silicon nitride (SiNx) etc.Come again, on first insulating barrier 402, form second metal level (figure does not show), also can be any conducting metal or alloy by forming second metal layer image, 403, the second metal levels after the gold-tinted etching process, as silver, chromium, molybdenum evanohm, aluminium neodymium alloy, ni-b alloy etc.Plate second insulating barrier, 404, the second insulating barriers 404 on second metal layer image 403 again and can be silica, silicon nitride etc.On second insulating barrier 404, form conductive transparent layer 503 again, conductive transparent layer 503 can be by conductive transparent material tin indium oxide (Tin doped Indium Oxide, ITO), indium-zinc oxide (Indium Zinc Oxide, IZO), zinc oxide (ZnO) any make.Then, form a sacrifice layer 405 again on conductive transparent layer 503, sacrifice layer 405 can be molybdenum, polymer (polymer) etc.Afterwards, dig out contact hole 4051 on sacrifice layer 405 and conductive transparent layer 503, form an overarm arm figure 406 again on sacrifice layer 405, overarm arm figure 406 can be the metal or alloy of non-crystalline silicon, any conduction etc.Overarm arm figure 406 is done with transparency conducting layer 503 by contact hole and is contacted conducting, at last sacrifice layer 405 is removed (release), promptly forms a micro-electromechanical switch (MEMS switch) element.
Be appreciated that, driving element 100 of the present invention and array module 300 can be applicable to is used as switch on all displays, as electrophoresis type display, LCD, powder mobile display, electrowetting display (EWD), cholesterol liquid crystal (Ch-LCD), organic-inorganic material active display (OLED, LED), micro electronmechanical display (MEMS display) etc.
In sum, driving element 100 of the present invention and array module 300 combine the design of active driving element and the principle of MEMS, because need be with silicon as semiconductor layer, so have the unexistent advantage of many amorphous silicon film transistors, for example high carrier transport factor makes it can be applied in the more treatment system of high speed, as image processing, the problem of leakage current makes it can have better switch current ratio.Driving element preparation method of the present invention is to use low temperature manufacture craft technology, can reduce the generation of problem in the manufacture craft etc., can also simplify the expenditure of original manufacturing process steps, minimizing cost, reach the advantage that promotes production capacity, these advantages make it have more competitiveness becomes follow-on driving element.
The above, only be embodiments of the invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (14)
1. driving element, it is characterized in that comprising: one first overarm arm group, second an overarm arm group and a conduction overarm arm group, between the first overarm arm group and the second overarm arm group, apply a potential difference or same polarity current potential, when the first overarm arm group because it is when being subjected to electric field force greater than the critical force of itself deformation, the first overarm arm group moves and touches this conduction overarm arm group, allows this conduction overarm arm group have and the same current potential of the first overarm arm group; When electric field force between the first overarm arm group and the second overarm arm group during less than the critical force of the deformation of the first overarm arm group own, the first arm group of hanging oneself from a beam is returned to original shape.
2. driving element according to claim 1, it is characterized in that, this first overarm arm group comprises one first overarm arm and one the first overarm arm strong point, and the described first overarm arm strong point is positioned at an end of the first overarm arm, and this first overarm arm strong point is wider than the first overarm arm; This conduction overarm arm group comprises a conduction overarm arm and a conduction overarm arm strong point, and described conduction overarm arm is bending and extends this conduction overarm strong point, and this conduction overarm arm one end is towards the first overarm crook of the arm folding; This second overarm arm group comprises the second overarm arm and lays respectively at the second overarm arm strong point at these second overarm arm two ends, and the described second overarm arm strong point is wider than the second overarm arm.
3. driving element according to claim 2 is characterized in that, this first overarm arm, conduction overarm arm and the second overarm arm all are unsettled state under original state.
4. driving element according to claim 2, it is characterized in that, this conduction overarm arm is mounted between this first, second overarm arm group, and when applying a potential difference between this first overarm arm and the second overarm arm, the first overarm arm moves and contact this conduction arm of hanging oneself from a beam to the second overarm arm direction.
5. driving element according to claim 2, it is characterized in that, this first overarm arm is mounted between this conduction overarm arm group and the second overarm arm group, when this first overarm arm group applied the same polarity current potential with the second overarm arm group, this first overarm arm moved and contacts this conduction arm of hanging oneself from a beam to the direction away from the second overarm arm.
6. driving element, it is characterized in that comprising: one first overarm arm group, second an overarm arm group and be located at a conduction overarm arm group between first, second overarm arm group, when this first overarm arm group and this second are hung oneself from a beam the potential difference that has between the arm group during less than default value, this first overarm arm group does not contact with this conduction overarm arm group, and when this potential difference reached this default value, this first overarm arm group contacted so that this first overarm arm group and this conduction overarm arm group have same potential with this conduction overarm arm group.
7. driving element according to claim 6, it is characterized in that, this first overarm arm group comprises one first overarm arm and one the first overarm arm strong point, and the described first overarm arm strong point is positioned at an end of the first overarm arm, and this first overarm arm strong point is wider than the first overarm arm; This conduction overarm arm group comprises a conduction overarm arm and a conduction overarm arm strong point, and described conduction overarm arm is bending and extends this conduction overarm strong point, and conduction overarm arm one end is towards the first overarm crook of the arm folding; This second overarm arm group comprises the second overarm arm and is positioned at the second overarm arm strong point at the second overarm arm two ends, and this second overarm arm strong point is wider than the second overarm arm.
8. driving element according to claim 7 is characterized in that, this first overarm arm, conduction overarm arm and the second overarm arm all are unsettled state under original state.
9. one kind comprises the array module of driving element according to claim 1, it is characterized in that it comprises: substrate, an a plurality of described driving element are located on this substrate, at least one scanline groups and at least one signal line group, and described scanline groups and signal line group are electrically connected with described a plurality of driving elements.
10. according to the described described array module of claim 9, it is characterized in that this each scanline groups comprises the multi-strip scanning line, to connect the second overarm arm group that is positioned at a plurality of driving elements of delegation respectively.
11. according to the described described array module of claim 9, it is characterized in that this each signal line group comprises many signal line, to connect the first overarm arm group of a plurality of driving elements that are positioned at same row respectively.
12. according to the described described array module of claim 9, it is characterized in that, when scan line that is connected in each driving element and holding wire conducting, can form a potential difference or the first overarm arm and the second overarm arm between the first overarm arm of this driving element and the second overarm arm and be applied with the same polarity current potential.
13. one kind comprises the structure of the array module of driving element according to claim 1, it comprises a substrate that forms successively, a first metal layer, first insulating barrier, second metal level, second insulating barrier, a sacrifice layer and an overarm arm, and wherein this first metal layer, first insulating barrier, second metal level, second insulating barrier, sacrifice layer and overarm arm form at least one driving element.
14. the structure of array module according to claim 13 is characterized in that, has contact hole on this sacrifice layer and second insulating barrier, this overarm arm contacts conducting by contact hole with this second metal layer image.
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Application publication date: 20111012 |