CN102208530A - Single-chip magnetic sensor, and laser heating-assisted annealing apparatus thereof and laser heating-assisted annealing method thereof - Google Patents
Single-chip magnetic sensor, and laser heating-assisted annealing apparatus thereof and laser heating-assisted annealing method thereof Download PDFInfo
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Abstract
The invention discloses a single-chip magnetic sensor, and a laser heating-assisted annealing apparatus thereof and a laser heating-assisted annealing method thereof. The laser heating-assisted annealing method comprises the following steps: (a), annealing is carried out on a magnetic thin film in a strong magnetic field, so that magnetic moments on a pinning layer of the magnetic thin film are towards a same direction; (b), the magnetic thin film is fixedly disposed on a clamp of a movable platform; (c), a laser source is opened to emit a laser beam, which is attenuated through an optical attenuator; the direction of the attenuated laser beam is changed through a reflective mirror; and the laser beam with the changed direction is focused into a light spot by a focusing objective lens; (d), the movable platform is moved, in order that the focused light spot of the laser beam is aimed at the magnetic thin film so as to enable the magnetic thin film to be heated by the laser beam; (e), a magnetic field intensity of an electromagnet arranged on the movable platform is adjusted, so that a magnetic domain of the heating area of the magnetic thin film can be overturned; and (f), the magnetic thin film is cut into slices, and the slices of the cut magnetic thin film are bound into one.
Description
Technical field
The present invention relates to GMR, MTJ(Magnetic Tunnel Junction) the spin valve magnetoresistance sensor field, specifically a kind of one chip magnetic sensor and LASER HEATING auxiliary annealing apparatus and method thereof, can assist GMR, MTJ to realize the part upset of pinning layer magnetic moment under lower magnetic field, described method can be used for making half-bridge, full-bridge, twin shaft half-bridge, twin shaft full-bridge GMR, MTJ magnetic sensor on magnetic thin film.
Background technology
Magnetic tunnel junction sensor (MTJ, Magnetic Tunel Junction) is the novel magnetoresistance effect sensor that begins commercial Application in recent years, what it utilized is the tunneling magnetoresistance (Tunnel Magnetoresistance) of magnetoresistance effect material, mainly show in the magnetoresistance effect material variation along with the external magnetic field size and Orientation, the resistance generation significant change of magnetoresistance effect, it is than finding the also AMR (anisotropic-magnetoresistance effect) of practical application before, has bigger resistance change rate, simultaneously having better temperature stability .MTJ magnetic sensor with respect to the Hall effect material, to have a resistance change rate big, the output signal amplitude is big, the resistivity height, advantage low in energy consumption, that temperature stability is high.The magnetic-field measurement device made from MTJ has than AMR, GMR, hall device that sensitivity is higher, power consumption is lower, linearity is better, dynamic range is wideer, temperature characterisitic is better, the advantage that antijamming capability is stronger.MTJ also can easily be integrated in the middle of the existing chip micro fabrication in addition, is convenient to make the very little integrated magnetic field transducer of volume.
In the middle of the application of GMR, MTJ magnetic sensor, can there be single resistance, reference resistance half-bridge, push-pull type half-bridge, reference resistance full-bridge, push-pull type full-bridge etc. multi-form.The push-pull type half-bridge requires the pinning layer magnetic moment direction of the MTJ in two arm resistances opposite, and be deposited on MTJ MTJ on the same silicon chip usually, needed magnitude of field intensity is identical because its magnetic moment overturns, thereby the magneto-resistor pinning layer magnetic moment on same silicon chip is all identical usually.Like this, two opposite adjacent magneto-resistors of pinning layer magnetic moment of deposition seem very difficult on same silicon chip.And from angle of practical application, the push-pull type half-bridge has than single resistance, sensitivity that the reference resistance half-bridge is higher, has temperature compensation function simultaneously, can suppress the influence of temperature drift.Promptly from the needs of practical application, the push-pull type half-bridge is better.Thereby in actual applications, usually the magneto-resistor of getting two high conformities from same silicon chip or different silicon chip, the sensitive direction of these two magneto-resistors identical (pinning layer direction) turns over turnback with one of them relative another magneto-resistor then and carries out the encapsulation of multicore sheet, constitutes the push-pull type half-bridge.Such result can realize the function of push-pull type half-bridge, has promptly improved detection sensitivity, has temperature compensation function, but multicore sheet encapsulation has on the other hand improved production cost; 180 degree that carry out that can not be strict during actual package overturn, promptly the sensitive direction of two resistance is not strict 180 degree that differ, make two resistance inequality with the output characteristic that the outfield changes, the sensitivity difference appears, there are bigger asymmetry problems such as bias voltage, will bring new problem so in actual applications.
Equally, also can have same problem in the preparation of GMR, MTJ full-bridge, simultaneously, because the MTJ full-bridge needs four resistance, this problem can be more obvious.In addition, at twin shaft push-pull type half-bridge, in the twin shaft push-pull type full-bridge, then need four different chips, then Ci Shi asymmetry can be more obvious.Therefore, seeking a kind of method that directly directly prepares push-pull type half-bridge, full-bridge on one chip is a kind of very natural idea.And in push-pull type bridge-type magnetic sensor, because the pinning layer direction of two adjacent resistance is opposite, the pinning layer direction of two relative resistance is identical.Therefore, when preparing GMR, MTJ full-bridge on single silicon chip, can not adopt anneals GMR, MTJ silicon chip in same high-intensity magnetic field realizes.Anneal in high-intensity magnetic field, the pinning layer of all GMR, MTJ unit is all towards same direction on the silicon chip.And if line sweep upset or the point-to-point local magnetic moment that can realize GMR on the silicon chip, MTJ unit overturn, then can prepare the better push-pull type twin shaft of MTJ magnetic field chip on the same very easily silicon chip.
Summary of the invention
At the problems referred to above, main purpose of the present invention provides a kind of one chip magnetic sensor and LASER HEATING auxiliary annealing apparatus and method thereof, makes half-bridge, full-bridge, twin shaft half-bridge, twin shaft full-bridge GMR, MTJ magnetic sensor on magnetic thin film.
The technical solution used in the present invention is: a kind of one chip magnetic sensor LASER HEATING auxiliary annealing device, and it comprises:
Lasing light emitter is used to launch the laser beam of aiming at magnetic thin film;
Optical attenuator is arranged on the rear end of the laser beam that sends via lasing light emitter;
Reflective mirror is used to change the direction of propagation via the laser beam after the optical attenuator decay;
Focusing objective len, the laser beam that is used for changing via reflective mirror after the direction is focused into hot spot;
Moveable platform includes the anchor clamps that are used for the clamping magnetic thin film on it;
Electromagnet, this electromagnet is arranged on the moveable platform.
Preferably, it also comprises the CCD camera, has a slit on the reflective mirror, and described CCD camera is aimed at magnetic thin film to regulate reflective mirror with hot spot by the slit of reflective mirror.
Preferably, described anchor clamps are provided with a sealing device, and the sealing device is isolated with the external world with magnetic thin film.
Preferably, charge into protective gas in the described sealing device.
Preferably, it also comprises the stepping motor that moves of control moveable platform, and described stepping motor is the twin shaft stepping motor of X, Y direction, and Y-axis and X-axis be quadrature mutually.
Preferably, the electromagnet Y-axis electromagnet Y that comprises the X-axis electromagnet X that arranges along X-direction, arrange along Y direction.
Preferably, it also comprises a magnetic field detectors, and described magnetic field detectors is used to survey the magnetic field value of electromagnet.
Preferably, it comprises that also one is used to detect the temperature sensor of magnetic thin film temperature, also be provided with a Power Conditioning Unit that is used to regulate laser beam power on the lasing light emitter, described Power Conditioning Unit is regulated lasing light emitter according to the data that temperature sensor collects.
Preferably, described focusing objective len is provided with a focus control that is used to regulate laser beam.
A kind of one chip magnetic sensor LASER HEATING auxiliary annealing method: a magnetic thin film in high-intensity magnetic field, anneal so that the magnetic moment of the pinning layer of magnetic thin film towards same direction;
B with the magnetic thin film fixed placement on the anchor clamps of moveable platform;
C opens lasing light emitter to launch laser beam, and laser beam is decayed via optical attenuator, and to change direction, the laser beam after the change direction is focused into hot spot via focusing objective len to the laser beam after the decay via reflective mirror;
D moves moveable platform so that the hot spot after the laser beam focusing is aimed at magnetic thin film so that laser beam heats magnetic thin film;
The e adjusting is arranged on the magnetic domain of the magnetic field intensity of the electromagnet on the moveable platform with the heating region of upset magnetic thin film;
F cuts into slices to magnetic thin film, and the good magnetic thin film of will cutting into slices connects and be packaged into sensor chip.
Preferably, in step c, regulate the position of reflective mirror by the slit on the CCD camera looks reflective mirror.
Preferably, also comprise a step D between steps d and the step e, promptly
D rotates reflective mirror, changes the zone that hot spot contacts with magnetic thin film, and to change the heating region of magnetic thin film, adjusting is arranged on the magnetic domain of the magnetic force of the electromagnet on the moveable platform with the heating region of change magnetic thin film.
Preferably, also comprise a step D between steps d and the step e, be that D moves moveable platform to change the zone that hot spot contacts with magnetic thin film, to change the magnetic thin film heating region, adjusting is arranged on the magnetic domain of the magnetic force of the electromagnet on the moveable platform with the heating region of upset magnetic thin film.
A kind of one chip is for pushing away MTJ or the GMR magnetic sensor that the formula half-bridge of exempting from is used, it comprises a magnetic thin film that is deposited on the silicon chip, described magnetic thin film has the first module of a plurality of arrangements arranged side by side, described first module is made of two MTJ magnetoresistive elements, and the magnetic moment of described two MTJ magnetoresistive elements oppositely parallels.
MTJ or GMR magnetic sensor that a kind of one chip is used for twin shaft push-pull type half-bridge, it comprises a magnetic thin film that is deposited on the silicon chip, described magnetic thin film has Unit second of a plurality of arrangements arranged side by side, described Unit second comprises four MTJ magnetoresistive elements, the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels, the magnetic moment direction of two magnetoresistive elements that is positioned at described second row oppositely parallels, and with the magnetic moment direction degree of turning clockwise that is positioned at the little lattice of first row.
MTJ or GMR magnetic sensor that a kind of one chip is used for the push-pull type full-bridge, it comprises a magnetic thin film that is deposited on the silicon chip, described magnetic thin film has Unit the 3rd of a plurality of arrangements arranged side by side, described Unit the 3rd comprises that four are the MTJ magnetoresistive element that two rows, two row are arranged, be positioned at first row two magnetoresistive elements magnetic moment direction in the same way and parallel, be positioned at the magnetic moment direction of two magnetoresistive elements of secondary series identical and with magnetic moment direction swing for two magnetoresistive elements being positioned at first row.
MTJ or GMR magnetic sensor that a kind of one chip is used for the push-pull type full-bridge, it comprises a magnetic thin film that is deposited on the silicon chip, described magnetic thin film has Unit the 4th of a plurality of arrangements arranged side by side, described Unit the 4th comprises four MTJ magnetoresistive elements, the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels, the magnetic moment direction that is positioned at two magnetoresistive elements of second row oppositely parallels, and the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels.
MTJ or GMR magnetic sensor that a kind of one chip is used for the twin shaft full-bridge, it comprises a magnetic thin film that is deposited on the silicon chip, described magnetic thin film has Unit the 5th of a plurality of arrangements arranged side by side, described each Unit the 5th comprise first interval and with second interval of the first interval adjacent setting, described first interval comprises four magnetoresistive elements that are arranged in two rows, the magnetic moment direction that is positioned at first row, two magnetoresistive elements in described first interval parallels in the same way, be positioned at the magnetic moment direction of secondary series two magnetoresistive elements in described first interval identical and with the magnetic moment direction swing of first row, two magnetoresistive elements that are positioned at first interval, described second interval comprises four magnetoresistive elements that are arranged in two rows, be positioned at the magnetic moment direction of first row, two magnetoresistive elements in described second interval identical and with the magnetic moment direction degree of turning clockwise of first row, two magnetoresistive elements that are positioned at first interval, be positioned at the magnetic moment direction of two magnetoresistive elements of second row in described second interval identical and with the magnetic moment direction degree of turning clockwise of two magnetoresistive elements of the secondary series that is positioned at first interval.
MTJ or GMR magnetic sensor that a kind of one chip is used for the twin shaft full-bridge, it comprises a magnetic thin film that is deposited on the silicon chip, described magnetic thin film has Unit the 6th of a plurality of arrangements arranged side by side, described Unit the 6th comprise first interval and with second interval of the first interval adjacent setting, described first interval comprises four magnetoresistive elements that are arranged in two rows, magnetic moment in first row, two magnetoresistive elements in described first interval oppositely and parallel, magnetic moment in second row, two magnetoresistive elements in described first interval oppositely and parallel, and the magnetic moment in first row, two magnetoresistive elements in described first interval oppositely and parallel, described second interval comprises four magnetoresistive elements that are arranged in two rows, and the magnetic moment direction in described second interval each magnetoresistive element is the magnetic moment direction degree of being rotated counterclockwise in first interval each corresponding magnetoresistive element.
More than technical scheme provided by the present invention, LASER HEATING auxiliary annealing apparatus and method of the present invention, can on same silicon chip, realize localized heating and local magnetic moment the upset.Adopt this method, the half-bridge that makes, the half-bridge twin shaft, full-bridge, full-bridge, twin shaft push-pull type transducer has highly sensitive, possesses the characteristics of the temperature compensation function and the noise cancellation of push-pull bridge transducer.Simultaneously can on same silicon chip, produce half-bridge, the half-bridge twin shaft, full-bridge, full-bridge MTJ or GMR transducer are fit to large-scale mass production, and cost is low.The magneto-resistor matching degree of transducer is good, the consistency height, and therefore the alignment precision height, has more excellent performance on the whole simultaneously.
Description of drawings
Fig. 1 is the LASER HEATING auxiliary annealing device schematic diagram of magnetic thin film.
Fig. 2 is the operation principle schematic diagram of MTJ magnetoresistive element.
Fig. 3 is the process schematic diagram that magnetic thin film is annealed in high-intensity magnetic field.
Fig. 4 is push-pull type MTJ or GMR half-bridge magnetic sensor operation principle schematic diagram.
Fig. 5 is the structural representation of the pinning layer of push-pull type MTJ or GMR half-bridge magnetic sensor.
Fig. 6 is twin shaft push-pull type MTJ or GMR half-bridge magnetic sensor operation principle schematic diagram.
Fig. 7 is the structural representation of the pinning layer of twin shaft push-pull type MTJ or GMR half-bridge magnetic sensor.
Fig. 8 is push-pull type MTJ or GMR full-bridge magnetic sensor structural representation.
Fig. 9 is first structural representation of the pinning layer of push-pull type MTJ or GMR full-bridge magnetic sensor.
Figure 10 is second structural representation of the pinning layer of push-pull type MTJ or GMR full-bridge magnetic sensor.
Figure 11 is twin shaft push-pull type MTJ or GMR full-bridge magnetic sensor operation principle schematic diagram.
Figure 12 is first structural representation of the pinning layer of twin shaft push-pull type MTJ or GMR full-bridge magnetic sensor.
Figure 13 is second structural representation of the pinning layer of twin shaft push-pull type MTJ or GMR full-bridge magnetic sensor.
In the accompanying drawing: 1, pinning layer; 2, magnetic nailed layer; 3, non magnetic oxide layer; 4, magnetic free layer; 5, nailed layer magnetic moment direction; 6, free layer magnetic moment direction; 21, the first bridge wall; The first bridge wall of 21A, A half-bridge; The first bridge wall of 21B, B half-bridge; 22, the second bridge wall; The second bridge wall of 22A, A half-bridge; The second bridge wall of 22B, B half-bridge; 23, first direction; 23A, A half-bridge first direction; 23B, B half-bridge first direction; 24, second direction; 24A, A half-bridge second direction; 24B, B half-bridge second direction; 25, half-bridge MTJ or GMR sensitive direction; 31, first resistance; 31A, A full-bridge first resistance; 31B, B full-bridge first resistance; 32, second resistance; 32A, A full-bridge second resistance; 32B, B full-bridge second resistance; 33, the 3rd resistance; 33A, A full-bridge the 3rd resistance; 33B, B full-bridge the 3rd resistance; 34, the 4th resistance; 34A, A full-bridge the 4th resistance; 34B, B full-bridge the 4th resistance; 35, first magnetic moment direction; 35A, A full-bridge first magnetic moment direction; 35B, B full-bridge first magnetic moment direction; 36, second magnetic moment direction; 36A, A full-bridge second magnetic moment direction; 36B, B full-bridge second magnetic moment direction; 37, the 3rd magnetic moment direction; 37A, A full-bridge the 3rd magnetic moment direction; 37B, B full-bridge the 3rd magnetic moment direction; 38, the 4th magnetic moment direction; 38A, A full-bridge the 4th magnetic moment direction; 38B, B full-bridge the 4th magnetic moment direction; 39, full-bridge MTJ or GMR sensitive direction; 41, the magnetic moment direction of the pinning layer magnetic domain under the magnetic thin film normality; 42, the magnetic moment direction of the pinning layer of the magnetic thin film after the high-intensity magnetic field annealing; 60, lasing light emitter; 61, optical attenuator; 62, laser beam; 63, CCD camera; 64, reflective mirror; 65, focusing objective len; 66, moveable platform; 67, magnetic thin film; 68X, X axis electromagnet; 68Y, Y-axis are to electromagnet; 69, magnetic field detectors; 70, hygrosensor; 71, first module; 72, Unit second; 81, Unit the 3rd; 82, Unit the 4th; 83, Unit the 5th; 84, Unit the 6th.
Embodiment
Respectively preferred embodiment of the present invention is described in detail below in conjunction with accompanying drawing 1-13, thereby protection scope of the present invention is made more explicit defining so that advantages and features of the invention can be easier to be those skilled in the art will recognize that.
As shown in Figure 3, magnetic moment direction upset schematic diagram in the magnetic domain under externally-applied magnetic field.Magnetic moment direction 41 is to point to without magnetic moment in the magnetic thin film magnetic domain of magnetic domain upset in the magnetic domain of the pinning layer under the magnetic thin film normality.Do not having under the situation in outfield, the magnetic moment in the magnetic domain is a random orientation.By externally-applied magnetic field H,, the magnetic field H size points to same direction, promptly outer field direction when reaching the magnetic moment in the magnetic domain to be turned to.As shown in Figure 3, add a switching field H after, the magnetic moment direction 42 of the pinning layer of the magnetic thin film after the high-intensity magnetic field annealing is the magnetic moment sensing after overturning along outer field direction.In the pinned magnetic layer of each MTJ element, wish that magnetic moment can both point to an identical direction.
Realize magnetic moment this switching process of overturning, need to satisfy two conditions, at a certain temperature promptly, magnetic field is greater than corresponding switching field Bf, and at this moment, the magnetic moment in the magnetic domain could be realized overturning.Simultaneously, as can be seen along with the rising of temperature, the magnetic domain magnetic moment needed magnetic field of overturning reduces, that is, temperature is high more, only otherwise destroy the structure of material, new phase transformation does not take place, realizes that then the magnetic moment needed magnetic field of overturning is low more.Like this, promptly can reduce the required magnetic field of magnetic domain upset by heating.Equally, can reduce local switching field by the local heating keeps other regional switching field constant.After promptly carrying out the local heating, local temperature is raise, make local magnetic domain magnetic moment switching field reduce, and on every side not the magnetic moment of the heating region required magnetic field of overturning remain on a bigger magnetic field B 1, then can be by adding a magnetic field B, make Bf＜B＜B1, then can realize local magnetic moment upset.And laser is because the accurate location and the aggregation of light beam, and high strength can point-device realization local heating, thereby overturns and reach magnetic thin film LASER HEATING auxiliary annealing in the part of realizing magnetic moment.
As shown in Figure 1, a kind of one chip magnetic sensor LASER HEATING auxiliary annealing device, it comprises
Lasing light emitter 60 is used to launch the laser beam 62 of aiming at magnetic thin film 67;
Focusing objective len 65 is used for and will be focused into hot spot via the laser beam 62 after the reflective mirror 64 change directions;
Electromagnet, this electromagnet is arranged on the moveable platform 66.
It also comprises CCD camera 63, has a slit on the reflective mirror 64, and described CCD camera 63 is regulated reflective mirror 64 by the slit of reflective mirror 64.
Described anchor clamps are provided with a sealing device, and the sealing device is isolated with the external world with magnetic thin film 67.Charge into protective gas in the described sealing device.
It also comprises the stepping motor that a control moveable platform 66 moves, and described stepping motor is the twin shaft stepping motor of X, Y direction.The twin shaft stepping motor can be controlled the motion of moveable platform, changes the target area of electromagnet heating, and Y-axis and X-axis be quadrature mutually.
The Y-axis electromagnet 68Y that electromagnet comprises the X-axis electromagnet 68X that arranges along X-direction, arranges along Y direction.
It also comprises a magnetic field detectors 69, and described magnetic field detectors 69 is used to survey the magnetic field value of electromagnet.
It comprises that also one is used to detect the temperature sensor 70 of magnetic thin film 67 temperature, also be provided with a Power Conditioning Unit that is used to regulate laser beam 62 power on the lasing light emitter 60, described Power Conditioning Unit is regulated lasing light emitter 60 according to the data that temperature sensor 70 collects.
Described focusing objective len 65 is provided with a focus control that is used to regulate laser beam 62.
In the present embodiment, a kind of one chip magnetic sensor LASER HEATING auxiliary annealing device, it comprises a lasing light emitter 60, is used to launch the laser beam 62 of aiming at magnetic thin film 67; Also be provided with a Power Conditioning Unit that is used to regulate laser beam 62 power on the lasing light emitter 60.
It comprises optical attenuator 61, is arranged on the rear end of the laser beam 62 that sends via lasing light emitter 60, with lasing light emitter 60 emitted laser bundles 62 energy adjustment to suitable scope.
It comprises reflective mirror 64, is used to change the direction of propagation via the laser beam 62 after optical attenuator 61 decay, and it also comprises CCD camera 63, has a slit on the reflective mirror 64, and described CCD camera 63 is regulated reflective mirror 64 by the slit of reflective mirror 64.Described reflective mirror 64 turns, and changes hot spot in the scanning direction of magnetic thin film, makes that hot spot can conversion between X-axis scanning and Y-axis scanning.
It comprises focusing objective len 65, be used for and be focused into hot spot via the laser beam 62 after the reflective mirror 64 change directions, the scope that hot spot contacts with magnetic thin film 67 is the machining area of annealing device, and described focusing objective len 65 is provided with a focus control that is used to regulate laser beam 62.
It comprises moveable platform 66, and it also comprises the stepping motor that moves of control moveable platform 66, and described stepping motor is the twin shaft stepping motor of X, Y direction, and Y-axis and X-axis be quadrature mutually.The twin shaft stepping motor can be controlled the motion of moveable platform 66, the target area that changes the electromagnet heating includes the anchor clamps that are used for clamping magnetic thin film 67 on it, described anchor clamps are provided with a sealing device, and the sealing device is isolated with the external world with magnetic thin film 67.Charge into protective gas in the described sealing device.In general, protective gas comprises argon gas, nitrogen, and this is a common technology, does not limit to the protection range of this patent of invention.Anchor clamps can be regulated the magnetic thin film 67 that is used for the clamping various sizes, and this is a common technology, does not limit to the protection of this patent of invention.
It comprises electromagnet, this electromagnet is arranged on the moveable platform, the Y-axis electromagnet 68Y that electromagnet comprises the X-axis electromagnet 68X that arranges along X-direction, arranges along Y direction, X-axis electromagnet 68X and Y-axis electromagnet 68Y can change by changing it and change its size by electric current, and, change the direction and the size of synthetic total magnetic field by changing the magnetic-field component size of X, Y direction.It also comprises a magnetic field detectors 69, described magnetic field detectors 69 is used to survey the magnetic field value that electromagnet produces, the magnetic field value that detects electromagnet when magnetic field detectors 69 changes its direction and size by regulating it automatically by electric current during not in suitable scope, guarantees the quality of processing.
It also comprises CCD camera 63, has a slit on the reflective mirror 64, and described CCD camera 63 is regulated reflective mirror 64 by the slit of reflective mirror 64.Described reflective mirror 64 turns, and changes the scanning direction of hot spot at magnetic thin film 67.
It comprises that also one is used to detect the temperature sensor 70 of magnetic thin film 67 temperature, also be provided with a Power Conditioning Unit that is used to regulate laser beam 62 power on the lasing light emitter 60, described Power Conditioning Unit is regulated lasing light emitter 60 according to the data that temperature sensor 70 collects.Temperature sensor 70 can be contact or contactless, when the temperature that detects magnetic thin film 67 when regional, by the Power Conditioning Unit of automatic adjusting lasing light emitter 60, does not change the power of laser beam 62 suitable, makes its temperature in appropriate scope.
A kind of one chip magnetic sensor LASER HEATING auxiliary annealing method:
A) magnetic thin film 67 in high-intensity magnetic field, anneal so that the magnetic moment of the pinning layer of magnetic thin film 67 towards same direction;
B) with magnetic thin film 67 fixed placement on the anchor clamps of moveable platform 66;
C) open lasing light emitter 60 to launch laser beam 62, laser beam 62 is decayed via optical attenuator 61, and to change direction, the laser beam 62 after the change direction is focused into hot spot via focusing objective len 65 to the laser beam 62 after the decay via reflective mirror 64;
D) mobile moveable platform 66 is so that the hot spot after laser beam 62 focusing is aimed at magnetic thin film 67 so that 62 pairs of magnetic thin films 67 of laser beam heat;
E) adjusting is arranged on the magnetic domain of the magnetic field intensity of the electromagnet on the moveable platform 66 with the heating region of upset magnetic thin film 67;
F) magnetic thin film 67 is cut into slices, and the good magnetic thin film 67 of will cutting into slices connects and is packaged into transducer.
In step c), regulate the position of reflective mirror 64 by the slit on the CCD camera 63 observation reflective mirrors 64.
Also comprise a step D1 between steps d and the step e), promptly
D1) rotate reflective mirror 64, change the zone that hot spot contacts with magnetic thin film 67, to change the heating region of magnetic thin film 67, adjusting is arranged on the magnetic domain of the magnetic force of the electromagnet on the moveable platform 66 with the heating region of change magnetic thin film 67.
Also comprise a step D2 between step d) and the step e)), promptly
D2) mobile moveable platform 66 is to change the zone that hot spot contacts with magnetic thin film 67, and to change magnetic thin film 67 heating regions, adjusting is arranged on the magnetic domain of the magnetic force of the electromagnet on the moveable platform 66 with the heating region of upset magnetic thin film 67.
In the present embodiment, a kind of one chip magnetic sensor LASER HEATING auxiliary annealing method, its step comprises:
A) magnetic thin film 67 in high-intensity magnetic field, anneal so that the magnetic moment of the pinning layer of magnetic thin film 67 towards same direction;
B) with magnetic thin film 67 fixed placement on the anchor clamps of moveable platform 66;
C) open lasing light emitter 60 to launch laser beam 62, laser beam 62 is decayed via optical attenuator 61, laser beam 62 after the decay via reflective mirror 64 to change direction, observe the position that reflective mirror 64 is regulated in slit on the reflective mirrors 64 by CCD camera 63, the laser beam 62 that changes after the direction is focused into hot spot via focusing objective len 65;
D) mobile moveable platform 66 is so that the hot spot after laser beam 62 focusing is aimed at magnetic thin film 67 so that 62 pairs of magnetic thin films 67 of laser beam heat;
E) adjusting is arranged on the magnetic domain of the magnetic field intensity of the electromagnet on the moveable platform 66 with the heating region of upset magnetic thin film 67;
F) mobile moveable platform 66 is to change the zone that hot spot contacts with magnetic thin film 67, and to change magnetic thin film 67 heating regions, adjusting is arranged on the magnetic domain of the magnetic force of the electromagnet on the moveable platform 66 with the heating region of change magnetic thin film 67;
G) magnetic thin film 67 is cut into slices, and good magnetic thin film 67 nations of will cutting into slices connect surely and are packaged into sensor chip.
As shown in Figure 2, the operation principle schematic diagram of MTJ magnetoresistive element.The structure of MTJ magnetoresistive element mainly is made up of nano-scale multilayer film: pinning layer 1, magnetic nailed layer 2, nonmagnetic oxide layer 3, magnetic free layer 4.The nailed layer magnetic moment direction is shown in 5.The free layer magnetic moment direction is shown in 6.Nailed layer magnetic moment direction 5 is vertical mutually with free layer magnetic moment direction 6.Free layer magnetic moment direction 6 changes along with the change of the size and Orientation of externally-applied magnetic field 7.The magnetic resistance of tunnel junction MTJ is along with free layer magnetic moment direction 6 changes with the variation of the angle of nailed layer magnetic moment direction 5.
MTJ that adopts the present invention to prepare to use or GMR transducer, the MTJ that uses for twin shaft push-pull type half-bridge or GMR transducer, the MTJ that uses for the push-pull type full-bridge or GMR transducer and MTJ or the GMR transducer used for twin shaft push-pull type full-bridge for the push-pull type half-bridge.
As shown in Figure 4, the operation principle schematic diagram of a kind of one chip push-pull type half-bridge MTJ or GMR transducer.The second direction 24 mutual antiparallels of the pinned magnetic layer of the first direction 23 of the pinned magnetic layer of two adjacent MTJ or the GMR magneto-resistor first bridge wall 21R-and the second bridge wall 22R+ among the figure, when changing along with external magnetic field along half-bridge MTJ or GMR sensitive direction 25, then the resistance R of the first bridge wall 21 in the push-pull type half-bridge-and resistance R+one of the second bridge wall 22 become big, one diminishes, have opposite variation relation, promptly constitute a push-pull type half-bridge.
As shown in Figure 5, MTJ or GMR magnetic sensor that a kind of one chip is used for the push-pull type half-bridge, it is to be deposited on a magnetic thin film 67 on the silicon chip by physical method, described magnetic thin film 67 has a lot of first module 71 described first modules 71 of arranging side by side and is made of two MTJ magnetoresistive elements, and the magnetic moment of described two MTJ magnetoresistive elements oppositely parallels.
As shown in Figure 6, the MTJ that uses for twin shaft push-pull type half-bridge of a kind of one chip or the operation principle schematic diagram of GMR magnetic sensor.A kind of twin shaft push-pull type half-bridge, push-pull type half-bridge A, B by two sensitive direction quadratures form, in the A half-bridge, the pinning layer magnetic moment A half-bridge first direction 23A of two resistance oppositely parallels with A half-bridge second direction 24A, in the B half-bridge, the pinning layer magnetic moment B half-bridge first direction 23B of two resistance oppositely parallels with B half-bridge second direction 24B.The sensitive axes quadrature of two half-bridge A, B is responded to the X of quadrature, the magnetic field of Y direction respectively.As shown in Figure 7, a kind of MTJ or GMR magnetic sensor that supplies twin shaft push-pull type half-bridge to use, it is to be deposited on a magnetic thin film 67 on the silicon chip by physical method, described magnetic thin film 67 has a lot of second unit of arranging side by side 72, described each second unit 72 comprises four MTJ magnetoresistive elements, the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels, the magnetic moment direction that is positioned at two magnetoresistive elements of described second row oppositely parallels, and turn 90 degrees with the magnetic moment direction dextrorotation that is positioned at the little lattice of first row.
As shown in Figure 8, the operation principle schematic diagram of push-pull type full-bridge MTJ or GMR transducer.Being made up of four MTJ or GMR magneto-resistor respectively, is respectively the first resistance 31R-, the second resistance 32R+, the 3rd resistance 33R+, the 4th resistance 34R-.Wherein the first resistance 31R-is relative with the 4th resistance 34R-, and first magnetic moment direction 35 and the 4th magnetic moment direction 38 of its pinned magnetic layer parallel; The second resistance 32R+ is relative with the 3rd resistance 33R+, and second magnetic moment direction 36 of its pinning layer is identical to parallel with the 3rd magnetic moment direction 37; And first magnetic moment direction 35 of the first resistance 31R-and second magnetic moment direction 36 of the second resistance 32R+ are on the contrary to parallel, with adding along the external magnetic field of full-bridge MTJ or GMR sensitive direction 39, the resistance of two adjacent brachium pontis becomes big respectively or diminishes, two resistance of two relative brachium pontis increase simultaneously or reduce, and promptly constitute a push-pull type full-bridge sensors.
It comprises two kinds of structures.
As shown in Figure 9, first kind of MTJ or GMR magnetic sensor that one chip is used for the push-pull type full-bridge, it is to be deposited on a magnetic thin film 67 on the silicon chip by physical method, described magnetic thin film 67 has a lot of the 3rd unit of arranging side by side 81, described each the 3rd unit 81 comprises that four are the MTJ magnetoresistive element that two rows, two row are arranged, be positioned at first row two magnetoresistive elements magnetic moment direction in the same way and parallel, be positioned at the magnetic moment direction of two magnetoresistive elements of secondary series identical and with magnetic moment direction Rotate 180 degree for two magnetoresistive elements being positioned at first row.
As shown in Figure 10, second kind of MTJ or GMR magnetic sensor that one chip is used for the push-pull type full-bridge, it is to be deposited on a magnetic thin film 67 on the silicon chip by physical method, described magnetic thin film 67 has a lot of the 4th unit of arranging side by side 82, described each the 4th unit 82 comprises four MTJ magnetoresistive elements, the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels, the magnetic moment direction that is positioned at two magnetoresistive elements of second row oppositely parallels, and the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels.
As shown in Figure 11, the MTJ that uses for the twin shaft full-bridge or the operation principle schematic diagram of GMR magnetic sensor.Two full-bridge A, B quadratures are placed, respond to the magnetic field of X, Y direction respectively, magneto-resistor pinning layer magnetic moment direction adjacent in each full-bridge parallels, relative magneto-resistor pinning layer magnetic moment parallels in the same way, among the figure, the A half-bridge first magnetic moment direction 35A parallels with A half-bridge the 4th magnetic moment direction 38A, and the A half-bridge second magnetic moment direction 36A parallels with A half-bridge the 3rd magnetic moment direction 37A, and the A half-bridge first magnetic moment direction 35A oppositely parallels with A half-bridge the 3rd magnetic moment direction 37A; Among the figure, the B half-bridge first magnetic moment direction 35B parallels with B half-bridge the 4th magnetic moment direction 38B, the B half-bridge second magnetic moment direction 36B parallels with B half-bridge the 3rd magnetic moment direction 37B, and the B half-bridge first magnetic moment direction 35B oppositely parallels with B half-bridge the 3rd magnetic moment direction 37B; And the A half-bridge first magnetic moment direction 35A and the B half-bridge first magnetic moment direction 35B be quadrature mutually.
It comprises two kinds of structures.
As shown in Figure 12, first kind of MTJ or GMR magnetic sensor that one chip is used for the twin shaft full-bridge, it is to be deposited on a magnetic thin film 67 on the silicon chip by physical method, described magnetic thin film 67 has a lot of the 5th unit of arranging side by side 83, described each the 5th unit 83 comprise first interval and with second interval of the first interval adjacent setting, described first interval comprises four magnetoresistive elements that are arranged in two rows, the magnetic moment direction that is positioned at first row, two magnetoresistive elements in described first interval parallels in the same way, be positioned at the magnetic moment direction of secondary series two magnetoresistive elements in described first interval identical and with the magnetic moment direction Rotate 180 degree of first row, two magnetoresistive elements that are positioned at first interval, described second interval comprises four magnetoresistive elements that are arranged in two rows, it is identical and turn 90 degrees with the magnetic moment direction dextrorotation of first row, two magnetoresistive elements that are positioned at first interval to be positioned at the magnetic moment direction of first row, two magnetoresistive elements in described second interval, and it is identical and turn 90 degrees with the magnetic moment direction dextrorotation of two magnetoresistive elements of the secondary series that is positioned at first interval to be positioned at the magnetic moment direction of two magnetoresistive elements of second row in described second interval.
As shown in Figure 13, second kind of MTJ or GMR magnetic sensor that one chip is used for the twin shaft full-bridge,
It is to be deposited on a magnetic thin film 67 on the silicon chip by physical method, described magnetic thin film 67 has a lot of the 6th unit of arranging side by side 84, each the 6th unit 84 comprise first interval and with second interval of the first interval adjacent setting, described first interval comprises four magnetoresistive elements that are arranged in two rows, magnetic moment in first row, two magnetoresistive elements in described first interval oppositely and parallel, magnetic moment in second row, two magnetoresistive elements in described first interval oppositely and parallel, and the magnetic moment in first row, two magnetoresistive elements in described first interval oppositely and parallel, described second interval comprises four magnetoresistive elements that are arranged in two rows, and the magnetic moment direction in described second interval each magnetoresistive element is that the magnetic moment direction in first interval each corresponding magnetoresistive element is rotated counterclockwise 90 degree.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (19)
1. one chip magnetic sensor LASER HEATING auxiliary annealing device, it is characterized in that: it comprises
Lasing light emitter (60) is used for the laser beam (62) that magnetic thin film (67) is aimed in emission;
Optical attenuator (61) is arranged on the rear end of the laser beam (62) that sends via lasing light emitter (60);
Reflective mirror (64) is used for changing the direction of propagation via the laser beam (62) after optical attenuator (61) decay;
Focusing objective len (65) is used for and will be focused into hot spot via the laser beam (62) after reflective mirror (64) the change direction;
Moveable platform (66) includes the anchor clamps that are used for clamping magnetic thin film (67) on it;
Electromagnet, this electromagnet are arranged on the moveable platform (66).
2. auxiliary annealing device according to claim 1, it is characterized in that: it also comprises CCD camera (63), have a slit on the reflective mirror (64), described CCD camera (63) is aimed at magnetic thin film (67) to regulate reflective mirror (64) with hot spot by the slit of reflective mirror (64).
3. auxiliary annealing device according to claim 1 is characterized in that: described anchor clamps are provided with a sealing device, and the sealing device is isolated with the external world with magnetic thin film (67).
4. auxiliary annealing device according to claim 3 is characterized in that: charge into protective gas in the described sealing device.
5. auxiliary annealing device according to claim 1 is characterized in that: it also comprises the stepping motor that a control moveable platform (66) moves, and described stepping motor is the twin shaft stepping motor of X, Y direction, and Y-axis and X-axis be quadrature mutually.
6. auxiliary annealing device according to claim 1 is characterized in that: the Y-axis electromagnet (68Y) that electromagnet comprises the X-axis electromagnet (68X) of arranging along X-direction, arranges along Y direction.
7. auxiliary annealing device according to claim 1 is characterized in that: it also comprises a magnetic field detectors (69), and described magnetic field detectors (69) is used to survey the magnetic field value of electromagnet.
8. auxiliary annealing device according to claim 1, it is characterized in that: it comprises that also one is used to detect the temperature sensor (70) of magnetic thin film (67) temperature, also be provided with a Power Conditioning Unit that is used to regulate laser beam (62) power on the lasing light emitter (60), described Power Conditioning Unit is regulated lasing light emitter (60) according to the data that temperature sensor (70) collects.
9. auxiliary annealing device according to claim 1 is characterized in that: described focusing objective len (65) is provided with a focus control that is used to regulate laser beam (62).
10. one chip magnetic sensor LASER HEATING auxiliary annealing method is characterized in that:
A) magnetic thin film (67) in high-intensity magnetic field, anneal so that the magnetic moment of the pinning layer of magnetic thin film (67) towards same direction;
B) with magnetic thin film (67) fixed placement on the anchor clamps of moveable platform (66);
C) open lasing light emitter (60) to launch laser beam (62), laser beam (62) is decayed via optical attenuator (61), to change direction, the laser beam (62) after the change direction is focused into hot spot via focusing objective len (65) to laser beam after the decay (62) via reflective mirror (64);
D) mobile moveable platform (66) is so that the hot spot after laser beam (62) focusing is aimed at magnetic thin film (67) so that laser beam (62) heats magnetic thin film (67);
E) adjusting is arranged on the magnetic domain of the magnetic field intensity of the electromagnet on the moveable platform (66) with the heating region of upset magnetic thin film (67);
F) magnetic thin film (67) is cut into slices, and the good magnetic thin film (67) of will cutting into slices connects and is packaged into sensor chip.
11. auxiliary annealing method according to claim 10 is characterized in that: in step c), regulate the position of reflective mirror (64) by the slit on CCD camera (63) the observation reflective mirror (64).
12. auxiliary annealing method according to claim 10 is characterized in that: also comprise a step D1 between step d) and the step e)), promptly
D1) rotate reflective mirror (64), change the zone that hot spot contacts with magnetic thin film (67), to change the heating region of magnetic thin film (67), adjusting is arranged on the magnetic domain of the magnetic force of the electromagnet on the moveable platform (66) with the heating region of change magnetic thin film (67).
13. auxiliary annealing method according to claim 10 is characterized in that: also comprise a step D2 between step d) and the step e)), promptly
D2) mobile moveable platform (66) is to change the zone that hot spot contacts with magnetic thin film (67), to change magnetic thin film (67) heating region, adjusting is arranged on the magnetic domain of the magnetic force of the electromagnet on the moveable platform (66) with the heating region of upset magnetic thin film (67).
14. an one chip is characterized in that for pushing away MTJ or the GMR magnetic sensor that the formula half-bridge of exempting from is used:
It comprises a magnetic thin film (67) that is deposited on the silicon chip, described magnetic thin film (67) has the first module (71) of a plurality of arrangements arranged side by side, described first module (71) is made of two MTJ magnetoresistive elements, and the magnetic moment of described two MTJ magnetoresistive elements oppositely parallels.
15. a MTJ or the GMR magnetic sensor that one chip is used for twin shaft push-pull type half-bridge is characterized in that:
It comprises a magnetic thin film (67) that is deposited on the silicon chip, described magnetic thin film (67) has Unit second (72) of a plurality of arrangements arranged side by side, described Unit second (72) comprises four MTJ magnetoresistive elements, the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels, the magnetic moment direction that is positioned at two magnetoresistive elements of described second row oppositely parallels, and turn 90 degrees with the magnetic moment direction dextrorotation that is positioned at the little lattice of first row.
16. a MTJ or the GMR magnetic sensor that one chip is used for the push-pull type full-bridge is characterized in that:
It comprises a magnetic thin film (67) that is deposited on the silicon chip, described magnetic thin film (67) has Unit the 3rd (81) of a plurality of arrangements arranged side by side, described Unit the 3rd (81) comprises that four are the MTJ magnetoresistive element that two rows, two row are arranged, be positioned at first row two magnetoresistive elements magnetic moment direction in the same way and parallel, be positioned at the magnetic moment direction of two magnetoresistive elements of secondary series identical and with magnetic moment direction Rotate 180 degree for two magnetoresistive elements being positioned at first row.
17. a MTJ or the GMR magnetic sensor that one chip is used for the push-pull type full-bridge is characterized in that:
It comprises a magnetic thin film (67) that is deposited on the silicon chip, described magnetic thin film (67) has Unit the 4th (82) of a plurality of arrangements arranged side by side, described Unit the 4th (82) comprises four MTJ magnetoresistive elements, the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels, the magnetic moment direction that is positioned at two magnetoresistive elements of second row oppositely parallels, and the magnetic moment direction that is positioned at two magnetoresistive elements of first row oppositely parallels.
18. a MTJ or the GMR magnetic sensor that one chip is used for the twin shaft full-bridge is characterized in that:
It comprises a magnetic thin film (67) that is deposited on the silicon chip, described magnetic thin film (67) has Unit the 5th (83) of a plurality of arrangements arranged side by side, described each Unit the 5th (83) comprise first interval and with second interval of the first interval adjacent setting, described first interval comprises four magnetoresistive elements that are arranged in two rows, the magnetic moment direction that is positioned at first row, two magnetoresistive elements in described first interval parallels in the same way, be positioned at the magnetic moment direction of secondary series two magnetoresistive elements in described first interval identical and with the magnetic moment direction Rotate 180 degree of first row, two magnetoresistive elements that are positioned at first interval, described second interval comprises four magnetoresistive elements that are arranged in two rows, it is identical and turn 90 degrees with the magnetic moment direction dextrorotation of first row, two magnetoresistive elements that are positioned at first interval to be positioned at the magnetic moment direction of first row, two magnetoresistive elements in described second interval, and it is identical and turn 90 degrees with the magnetic moment direction dextrorotation of two magnetoresistive elements of the secondary series that is positioned at first interval to be positioned at the magnetic moment direction of two magnetoresistive elements of second row in described second interval.
19. a MTJ or the GMR magnetic sensor that one chip is used for the twin shaft full-bridge is characterized in that:
It comprises a magnetic thin film (67) that is deposited on the silicon chip, described magnetic thin film (67) has Unit the 6th (84) of a plurality of arrangements arranged side by side, described Unit the 6th (84) comprise first interval and with second interval of the first interval adjacent setting, described first interval comprises four magnetoresistive elements that are arranged in two rows, magnetic moment in first row, two magnetoresistive elements in described first interval oppositely and parallel, magnetic moment in second row, two magnetoresistive elements in described first interval oppositely and parallel, and the magnetic moment in first row, two magnetoresistive elements in described first interval oppositely and parallel, described second interval comprises four magnetoresistive elements that are arranged in two rows, and the magnetic moment direction in described second interval each magnetoresistive element is that the magnetic moment direction in first interval each corresponding magnetoresistive element is rotated counterclockwise 90 degree.
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