CN102208345A - Method for producing KP rectifier chips by aluminum boride source through one-step perfect diffusion - Google Patents
Method for producing KP rectifier chips by aluminum boride source through one-step perfect diffusion Download PDFInfo
- Publication number
- CN102208345A CN102208345A CN 201110133071 CN201110133071A CN102208345A CN 102208345 A CN102208345 A CN 102208345A CN 201110133071 CN201110133071 CN 201110133071 CN 201110133071 A CN201110133071 A CN 201110133071A CN 102208345 A CN102208345 A CN 102208345A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- diffusion
- quartzy
- source
- aluminium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to a method for producing KP rectifier chips by an aluminum boride source through one-step perfect diffusion, which comprises the following steps of: silicon wafer cleaning, diffusion, oxidation, primary photoetching, phosphorus diffusion, disc cutting, sintering, aluminium evaporation, secondary photoetching and mesa etching and is characterized in that the diffusion procedure is one-step perfect diffusion and specifically comprises the following steps of: preparing a boron source and an aluminium source, perfectly diffusing in one step, ensuring that boron source plates and aluminium source plates in quartz closed tubes are uniformly distributed in silicon wafers to be diffused, and finishing diffusion when the surface concentration and the sintering depth reach standards. Compared with the prior art, the invention has the beneficial effects that the diffusion sources of boron and aluminium are adopted in the production manufacture process of PN junctions, the rectifier chips are molded in one step by high temperature diffusion; and compared with the same size of large-power high-voltage rectifier chip products, the rectifier chips have the characteristics of voltages of being improved by 800V to 1000V, service life of being increased by more than 500 hours, phosphorus diffusion time of being shortened by 4-5hours, improved diffusion efficiency, reduced damage of the silicon single crystal wafers, and improved finished product rate.
Description
Technical field
The present invention relates to thyristor rectifier chip production field, relate in particular to the method that the KP rectification chip is produced in the perfect diffusion in a kind of boron aluminium source.
Background technology
In the prior art, high-power KP thyristor rectifier chip production technology more complicated, except silicon chip cleaning and diffusing procedure, also have operations such as oxidation, a photoetching, phosphorus expansion, cyclotomy, sintering, evaporation of aluminum, secondary photoetching, mesa etch, consume a large amount of electric energy, man-hour and chemical agent, cost is higher, and the impurity concentration gradient contradicts in diffusion into the surface density unevenness and the semiconductor, makes power rectifier device combination property instability.
Summary of the invention
The purpose of this invention is to provide the perfect diffusion in a kind of boron aluminium source and produce the method for KP rectification chip, overcome the deficiencies in the prior art, adopt the High temperature diffusion technology in boron aluminium source, reduce the phosphorus expansion time that PN junction is produced, shortened process reduces the damage of silicon single crystal flake, improves rate of finished products.
In order to address the above problem, the present invention by the following technical solutions:
The method of KP rectification chip is produced in the perfect diffusion in boron aluminium source, comprises silicon chip cleaning, diffusion, oxidation, a photoetching, phosphorus expansion, cyclotomy, sintering, evaporation of aluminum, secondary photoetching, mesa etch, and described diffusing procedure is a perfect diffusion, specifically may further comprise the steps:
1) boron source, the preparation of aluminium source:
(1) boron source preparation:
A. prepare diboron trioxide solution, get diboron trioxide: top grade absolute ethyl alcohol=10g: 100ml, open even surpassing of solution with ultrasonic wave;
B. the source of making is cleaned with silicon chip, earlier silicon chip is placed on the quartz boat, puts into quartzy case, boils with 1# liquid and 2# liquid, each 2 times, each 10 minutes, washes down dry for standby again with deionized water;
C. clean quartzy stopped pipe, at first floated 30 minutes, use deionized water rinsing, steep 2h～4h with chloroazotic acid then,, dashed and put into baking oven and dry standby with a large amount of deionized water replacement rinses with hydrofluoric acid solution;
D. silicon chip is coated with the source, earlier silicon chip is taken out from baking oven, be placed in the operating desk, getting diboron trioxide solution pours in the silica dish, put into silicon chip then successively, silicon chip is coated with to take out behind the source and dries, and repeats 4～5 times, in the quartzy stopped pipe of packing into, with oxyhydrogen flame quartzy stopped pipe two is sealed up, fill high-purity argon gas, quartzy stopped pipe electricity consumption spark vacuum detector detects, and pushes the diffusion furnace flat-temperature zone during pinkiness, 1250 ± 1 ℃ of temperature, time is 19h～20h, is boron source sheet when surface concentration is 0.3～0.5R /Ω, and is standby;
(2) aluminium source preparation
A. high-purity aluminium wire of 99.999% is got in aluminium wire corrosion, floats 30 seconds with hcl corrosion liquid, and hcl corrosion liquid configuration proportion is hydrochloric acid: deionized water=1: 1, and floated with deionized water and washed down, dry standby;
B. the source of making is cleaned with silicon chip, earlier silicon chip is placed on the quartz boat, puts into quartzy case, boils with 1# liquid and 2# liquid, each 2 times, each 10 minutes, washes down dry for standby again with deionized water;
C. with sintering furnace temperature rise to 700 ℃～705 ℃, the aluminium wire with aforementioned corrosion curves serpentine then, puts respectively on the silicon chip, and silicon slice placed is pushed on quartz plate in the vacuum sintering furnace, and vacuum sintering furnace vacuum degree is 3 * 10
-3Mpa treated behind the constant temperature timing 2 minutes, directly pushed body of heater then open, and take out the cooling back, and silicon chip and aluminium wire are welded into one and are aluminium source sheet;
2) perfect diffusion
(1) expands preceding preliminary treatment
A. clean quartz ring, quartz plate, boron source sheet and tweezers, wash 2 times with deionized water, each 10 minutes, dry for standby;
B. clean quartzy stopped pipe, earlier quartzy stopped pipe was floated hydrofluoric acid solution 30 minutes, after the bath, steep chloroazotic acid 2h～4h again, take out quartzy stopped pipe, alternately dash 20 times, put into the baking oven dry for standby with hot and cold deionized water;
C. aluminium source sheet is handled, and aluminium source sheet is put into plastic channel, puts into hcl corrosion liquid, floats 30 seconds backlash deionized waters 20 times, dry for standby;
D. silicon chip is handled, and will wait to expand silicon chip and be placed in respectively on the quartz boat, puts into quartzy case, pours the cleaning agent that deoils into, more than ultrasonic waves for cleaning 4h, uses 1 respectively
#Liquid and 2
#Liquid boils 2 times, and each 10 minutes, rinse with deionized water, put into 180 ℃ of baking ovens of temperature, baking 3h～4h dries standby;
(2) with quartz plate, silicon chip to be expanded, quartz plate, boron source sheet, quartz ring, aluminium source sheet, quartz plate, wait to expand silicon chip and put into quartzy stopped pipe successively, guarantee that boron source sheet and aluminium source sheet are evenly distributed waiting to expand in the silicon chip, with oxyhydrogen flame quartzy stopped pipe two is sealed up, fill high-purity argon gas, quartzy stopped pipe electricity consumption spark vacuum detector detects, push the diffusion furnace flat-temperature zone during pinkiness, 1250 ± 1 ℃ of temperature, time is 20h～21h, when silicon wafer thickness is selected 400 ± 10mm for use, resistivity is 60～80 Ω m, and surface concentration is 40R /Ω～60R /Ω, and diffusion was finished when junction depth was 70 μ m～75 μ m.
Compared with prior art, the invention has the beneficial effects as follows: in the manufacturing process of PN junction, adopt two kinds of Elements Diffusion sources of boron aluminium, a High temperature diffusion moulding, the high-power high voltage rectification chip product contrast of same size, voltage has improved 800V～1000V, product has more more than 500 hours useful life, has reduced phosphorus and has expanded 4～5 hours time, has improved diffuser efficiency, the damage of silicon single crystal flake reduces, and has improved rate of finished products.
Description of drawings
Tubulature schematic diagram when Fig. 1 is a perfect diffusion of the present invention.
Among the figure: the quartzy stopped pipe 2-of 1-quartz plate 3-quartz ring 4-waits to expand sheet 6-aluminium source, silicon chip 5-boron source sheet
Embodiment
The method of KP rectification chip is produced in the perfect diffusion in boron aluminium source, comprises steps such as silicon chip cleaning, a perfect diffusion, oxidation, a photoetching, phosphorus expansion, cyclotomy, sintering, evaporation of aluminum, secondary photoetching, mesa etch:
One, silicon chip cleans:
1) will wait earlier to expand silicon chip through shakeout, deoil, float oxide layer, go metal ion to handle after, clean dry for standby;
2) 1# liquid preparation, hydrogen peroxide: ammoniacal liquor: deionized water=2: 1: 5
The preparation of 2# liquid, hydrogen peroxide: hydrochloric acid: deionized water=2: 1: 7;
3) preparation hcl corrosion liquid, hydrochloric acid: deionized water=1: 1;
4) preparation nitration mixture, nitric acid: hydrofluoric acid=9: 1;
5) preparation mesa etch liquid, nitric acid: hydrofluoric acid=6: 1;
6) preparation photoetching corrosion liquid, ammonium fluoride: hydrofluoric acid: deionized water=6: 3: 10.
Two, a perfect diffusion specifically may further comprise the steps:
1) boron source, the preparation of aluminium source:
(1) boron source preparation:
A. prepare diboron trioxide solution, get diboron trioxide: top grade absolute ethyl alcohol=10g: 100ml, open even surpassing of solution with ultrasonic wave;
B. the source of making is cleaned with silicon chip, earlier silicon chip is placed on the quartz boat, puts into quartzy case, boils with 1# liquid and 2# liquid, each 2 times, each 10 minutes, washes down dry for standby again with deionized water;
C. clean quartzy stopped pipe, at first floated 30 minutes, use deionized water rinsing, steep 2h～4h with chloroazotic acid then,, dashed and put into baking oven and dry standby with a large amount of deionized water replacement rinses with hydrofluoric acid solution;
D. silicon chip is coated with the source, earlier silicon chip is taken out from baking oven, be placed in the operating desk, getting diboron trioxide solution pours in the silica dish, put into silicon chip then successively, silicon chip is coated with to take out behind the source and dries, and repeats 4～5 times, in the quartzy stopped pipe of packing into, with oxyhydrogen flame quartzy stopped pipe two is sealed up, fill high-purity argon gas, quartzy stopped pipe electricity consumption spark vacuum detector detects, and pushes the diffusion furnace flat-temperature zone during pinkiness, 1250 ± 1 ℃ of temperature, time is 19h～20h, is boron source sheet when surface concentration is 0.3～0.5R /Ω, and is standby;
(2) aluminium source preparation
A. high-purity aluminium wire of 99.999% is got in aluminium wire corrosion, floats 30 seconds with hcl corrosion liquid, and hcl corrosion liquid configuration proportion is hydrochloric acid: deionized water=1: 1, and floated with deionized water and washed down, dry standby;
B. the source of making is cleaned with silicon chip, earlier silicon chip is placed on the quartz boat, puts into quartzy case, boils with 1# liquid and 2# liquid, each 2 times, each 10 minutes, washes down dry for standby again with deionized water;
C. with sintering furnace temperature rise to 700 ℃～705 ℃, the aluminium wire with aforementioned corrosion curves serpentine then, puts respectively on the silicon chip, and silicon slice placed is pushed on quartz plate in the vacuum sintering furnace, and vacuum sintering furnace vacuum degree is 3 * 10
-3Mpa treated behind the constant temperature timing 2 minutes, directly pushed body of heater then open, and take out the cooling back, and silicon chip and aluminium wire are welded into one and are aluminium source sheet;
2) perfect diffusion
(1) expands preceding preliminary treatment
A. clean quartz ring, quartz plate, boron source sheet and tweezers, wash 2 times with deionized water, each 10 minutes, dry for standby;
B. clean quartzy stopped pipe, earlier quartzy stopped pipe was floated hydrofluoric acid solution 30 minutes, after the bath, steep chloroazotic acid 2h～4h again, take out quartzy stopped pipe, alternately dash 20 times, put into the baking oven dry for standby with hot and cold deionized water;
C. aluminium source sheet is handled, and aluminium source sheet is put into plastic channel, puts into hcl corrosion liquid, floats 30 seconds backlash deionized waters 20 times, dry for standby;
D. silicon chip is handled, and will wait to expand silicon chip and be placed in respectively on the quartz boat, puts into quartzy case, pours the cleaning agent that deoils into, more than ultrasonic waves for cleaning 4h, uses 1 respectively
#Liquid and 2
#Liquid boils 2 times, and each 10 minutes, rinse with deionized water, put into 180 ℃ of baking ovens of temperature, baking 3h～4h dries standby;
(2) see Fig. 1, with quartz plate, silicon chip to be expanded, quartz plate, boron source sheet, quartz ring, aluminium source sheet, quartz plate, wait to expand silicon chip and put into quartzy stopped pipe successively, guarantee that boron source sheet and aluminium source sheet are evenly distributed waiting to expand in the silicon chip, with oxyhydrogen flame quartzy stopped pipe two is sealed up, fill high-purity argon gas, quartzy stopped pipe electricity consumption spark vacuum detector detects, push the diffusion furnace flat-temperature zone during pinkiness, 1250 ± 1 ℃ of temperature, time is 20h～21h, and when silicon wafer thickness was selected 400 ± 10mm for use, resistivity was 60～80 Ω m, surface concentration is 40R /Ω～60R /Ω, and diffusion was finished when junction depth was 70 μ m～75 μ m.
Three, oxidation
The silicon chip that diffusion is finished is placed in the plastic tub, floats oxide layer with hydrofluoric acid solution, for well, washes away hydrofluoric acid solution with deionized water with the not sticking water of silicon chip surface then, is placed on the oxidation quartz boat, is placed in the quartzy case and boils 1
#With 2
#Liquid boils respectively 2 times, each 10 minutes, wash by water 20 times, put in the baking oven and dry, the time is 2h～4h, takes out then to be placed in the oxidation quartz ampoule, preheating 15 minutes to 20 minutes, push the oxidation furnace flat-temperature zone then slowly, dried wet oxygen alternately 9 hours, time sequencing is 1 hour-wet oxygen of dried oxygen 3 hours-1 hour-wet oxygen of dried oxygen 3 hours---a dried oxygen 1 hour, the oxidation furnace temperature is 1180 ℃ ± 1 ℃, the wet oxygen temperature is 95 ℃～98 ℃, and dried oxygen is 300ml, and wet oxygen is 500ml, oxidated layer thickness is 7 interference fringes, color is green, pink alternately, count a kind of colors respectively and be 7 just passable.
Four, a photoetching
Silicon chip after the oxidation is engraved on request the chip layout that needs respectively, operating process is a sound of a roaring fire case before earlier silicon chip being put into, dried by the fire 20 minutes, whirl coating then, whirl coating speed are that per minute 800 changes～1000 and changes whirl coating speed decision glue thickness, get rid of the silicon chip of glue and put into preceding sound of a roaring fire case 20 minutes, 80 ℃ of temperature engrave respective graphical respectively with all silicon chips before the exposure, during development the silicon chip pendulum are being put on the quartz boat in the petrol tank, time is 8 minutes, be put into ethyl acetate then 1 minute, and dried up and put into baking oven 30 minutes, temperature is 140 ℃, mend wax, with the corrosion of photoetching corrosive liquid, will corrode the back silicon chip and set silicon chip with quartz boat, remove photoresist with 1
#Liquid and sulfuric acid are all right, as long as silicon chip surface glue is gone clean just passable.
Five, phosphorus expands
Photoetching silicon chip evenly is placed in phosphorus expands on the quartz boat and clean, boil 1
#With 2
#Liquid boils twice respectively, and each 10 minutes, alternately dash 20 times with cold and hot deionized water, put into the baking oven dry for standby then; The phosphorus stove is warming up to 1200 ℃, feeds 10 to 15 minutes oxygen O
2And nitrogen N
2, silicon chip, slowly pushes silicon chip in the flat-temperature zone after 15 minutes in the fire door preheating, logical O
2And N
2450ml begins pre-expansion respectively, treats pre-expansion after 120 minutes, and phosphorus is expanded furnace temperature be raised to 1250 ℃, the constant temperature timing, the main expansion time decides according to chip, is heating up simultaneously with O
2And N
2Be transferred to 500ml respectively, main expand finish after, close gas after 30 minutes closing stove, otherwise the easy surface oxidation of silicon chip treats to take out in second day cyclotomy.
Six, cyclotomy
Phosphorus is expanded the back silicon chip carry out cyclotomy by figure, do not have bubble between silicon chip and the sheet glass during bonding die, to good cyclotomy line, be not offset the cyclotomy line when cutting, do not have and collapse the limit, cut goes silicon chip surface wax totally.The dewax method has, liquid detergent, gasoline, washing powder.
Seven, sintering
A. with the cyclotomy silicon chip with 1
#Liquid boils 1 time, mainly is to deoil and dewax, floats hydrofluoric acid then and removes oxide layer, treat oxide layer all go clean after, bath boils 1 again
#Liquid and 2
#Liquid each 1 time, every all over 10 minutes, to wash by water 20 times with the alternately bath of cold and hot deionized water during bath, then with absolute ethyl alcohol dehydration, oven dry.(annotate: when having floated the oxygen fluoric acid, to survey transoid, if there is transoid to float transoid with nitration mixture, when floating transoid, the time of floating be 10 seconds or 15 seconds can not be oversize, otherwise influential to the chip surface parameter).
B. the molybdenum sheet cleaning method at first evenly is placed in molybdenum sheet on the rack for cleaning, puts into Plastic Drum then, pour industrial hydrogen peroxide into, add NaOH preparation cleaning fluid, clean configuration proportion, industry hydrogen peroxide: NaOH=600ml: 5g, clean bath in 2 minutes, wash by water 20 times standby.
C. shipment
With silicon chip, molybdenum sheet, fine aluminium sheet behind the cyclotomy that cleans up, the mould of packing into is in order put sintering in the vacuum sintering furnace into, and furnace temperature is 700 ℃～705 ℃.
Eight, evaporation of aluminum
To sinter chip and be placed in evaporation of aluminum in the coating machine, the surface is a silver gray, puts into then and forms alloy in the vacuum sintering furnace, and furnace temperature is 540 ℃～550 ℃, and the time is constant temperature 30 minutes.
Nine, secondary photoetching
With chip whirl coating behind the alloy, whirl coating speed is that per minute changes～800 commentaries on classics 600.Sound of a roaring fire case is 20 minutes before being placed on then, temperature is 80 ℃, carry out the secondary photoetching according to a litho pattern, exposure back chip pendulum is in developing box, and the time is 2 minutes, be put into the butyl acetate photographic fixing then 1 minute, take out to dry up and put into baking oven 30 minutes, temperature is 140 ℃, takes out and mends the wax corrosion, corrosive liquid is a phosphoric acid, cleans photoresist with the gasoline cotton at last.
Ten, mesa etch
A. qualified chip after the secondary photoetching is evenly coated black wax (with the protection chip); treat to grind positive and negative two angles of chip respectively with angle lap machine after the chip black wax is done, positive angle is 30 °, and negative angle is 5 °; positive negative angle overall width is 1.8mm to 2.1mm, guarantees forward and reverse voltage characteristic like this.
B. corrosion is placed in chip behind the angle lap respectively in the corrosion basin, and bath washes down chip surface diamond dust then, corrode with mesa etch liquid then, corrode at twice, 90 seconds for the first time, wash by water 6 times, bath was 10 times in 30 seconds for the second time, dried with infrared lamp then.
C. gluing will corrode chip and be placed on the glue spreader, be coated with 406 glue, and glue spreader speed, gimmick unanimity guarantee that glue is even, do not have burr.
D. test is measured on the thyristor Comprehensive Parameter Test Rig for Electrical oppositely, forward voltage, and leakage current should be less than 0.3mA, and voltage should be qualified greater than 1800V.
Claims (1)
1. the method for KP rectification chip is produced in the perfect diffusion in boron aluminium source, comprise silicon chip cleaning, diffusion, oxidation, a photoetching, phosphorus expansion, cyclotomy, sintering, evaporation of aluminum, secondary photoetching, mesa etch, it is characterized in that described diffusing procedure is a perfect diffusion, specifically may further comprise the steps:
1) boron source, the preparation of aluminium source:
(1) boron source preparation:
A. prepare diboron trioxide solution, get diboron trioxide: top grade absolute ethyl alcohol=10g: 100ml, open even surpassing of solution with ultrasonic wave;
B. the source of making is cleaned with silicon chip, earlier silicon chip is placed on the quartz boat, puts into quartzy case, boils with 1# liquid and 2# liquid, each 2 times, each 10 minutes, washes down dry for standby again with deionized water;
C. clean quartzy stopped pipe, at first floated 30 minutes, use deionized water rinsing, steep 2h～4h with chloroazotic acid then,, dashed and put into baking oven and dry standby with a large amount of deionized water replacement rinses with hydrofluoric acid solution;
D. silicon chip is coated with the source, earlier silicon chip is taken out from baking oven, be placed in the operating desk, getting diboron trioxide solution pours in the silica dish, put into silicon chip then successively, silicon chip is coated with to take out behind the source and dries, and repeats 4～5 times, in the quartzy stopped pipe of packing into, with oxyhydrogen flame quartzy stopped pipe two is sealed up, fill high-purity argon gas, quartzy stopped pipe electricity consumption spark vacuum detector detects, and pushes the diffusion furnace flat-temperature zone during pinkiness, 1250 ± 1 ℃ of temperature, time is 19h～20h, is boron source sheet when surface concentration is 0.3～0.5R /Ω, and is standby;
(2) aluminium source preparation
A. high-purity aluminium wire of 99.999% is got in aluminium wire corrosion, floats 30 seconds with hcl corrosion liquid, and hcl corrosion liquid configuration proportion is hydrochloric acid: deionized water=1: 1, and floated with deionized water and washed down, dry standby;
B. the source of making is cleaned with silicon chip, earlier silicon chip is placed on the quartz boat, puts into quartzy case, boils with 1# liquid and 2# liquid, each 2 times, each 10 minutes, washes down dry for standby again with deionized water;
C. with sintering furnace temperature rise to 700 ℃～705 ℃, the aluminium wire with aforementioned corrosion curves serpentine then, puts respectively on the silicon chip, and silicon slice placed is pushed on quartz plate in the vacuum sintering furnace, and vacuum sintering furnace vacuum degree is 3 * 10
-3Mpa treated behind the constant temperature timing 2 minutes, directly pushed body of heater then open, and take out the cooling back, and silicon chip and aluminium wire are welded into one and are aluminium source sheet;
2) perfect diffusion
(1) expands preceding preliminary treatment
A. clean quartz ring, quartz plate, boron source sheet and tweezers, wash 2 times with deionized water, each 10 minutes, dry for standby;
B. clean quartzy stopped pipe, earlier quartzy stopped pipe was floated hydrofluoric acid solution 30 minutes, after the bath, steep chloroazotic acid 2h～4h again, take out quartzy stopped pipe, alternately dash 20 times, put into the baking oven dry for standby with hot and cold deionized water;
C. aluminium source sheet is handled, and aluminium source sheet is put into plastic channel, puts into hcl corrosion liquid, floats 30 seconds backlash deionized waters 20 times, dry for standby;
D. silicon chip is handled, and will wait to expand silicon chip and be placed in respectively on the quartz boat, puts into quartzy case, pours the cleaning agent that deoils into, more than ultrasonic waves for cleaning 4h, uses 1 respectively
#Liquid and 2
#Liquid boils 2 times, and each 10 minutes, rinse with deionized water, put into 180 ℃ of baking ovens of temperature, baking 3h～4h dries standby;
(2) with quartz plate, silicon chip to be expanded, quartz plate, boron source sheet, quartz ring, aluminium source sheet, quartz plate, wait to expand silicon chip and put into quartzy stopped pipe successively, guarantee that boron source sheet and aluminium source sheet are evenly distributed waiting to expand in the silicon chip, with oxyhydrogen flame quartzy stopped pipe two is sealed up, fill high-purity argon gas, quartzy stopped pipe electricity consumption spark vacuum detector detects, push the diffusion furnace flat-temperature zone during pinkiness, 1250 ± 1 ℃ of temperature, time is 20h～21h, when silicon wafer thickness is selected 400 ± 10mm for use, resistivity is 60～80 Ω m, and surface concentration is 40R /Ω～60R /Ω, and diffusion was finished when junction depth was 70 μ m～75 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110133071A CN102208345B (en) | 2011-05-23 | 2011-05-23 | Method for producing KP rectifier chips by aluminum boride source through one-step perfect diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110133071A CN102208345B (en) | 2011-05-23 | 2011-05-23 | Method for producing KP rectifier chips by aluminum boride source through one-step perfect diffusion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102208345A true CN102208345A (en) | 2011-10-05 |
| CN102208345B CN102208345B (en) | 2012-10-03 |
Family
ID=44697115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110133071A Expired - Fee Related CN102208345B (en) | 2011-05-23 | 2011-05-23 | Method for producing KP rectifier chips by aluminum boride source through one-step perfect diffusion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102208345B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934320A (en) * | 2014-03-18 | 2015-09-23 | 西安永电电气有限责任公司 | Large-current high-voltage rectifying tube and designing process thereof |
| CN104282557B (en) * | 2014-09-22 | 2017-02-08 | 鞍山市良溪电力科技有限公司 | Method for manufacturing overtemperature self-protection thyristor for electric heating equipment |
| CN109755117A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | A method of FRGPP chip is made using printing technology |
| CN111244037A (en) * | 2020-03-11 | 2020-06-05 | 天水天光半导体有限责任公司 | Integrated manufacturing method of reverse voltage 40V or 60V bridge rectifier circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6190947B1 (en) * | 1997-09-15 | 2001-02-20 | Zowie Technology Corporation | Silicon semiconductor rectifier chips and manufacturing method thereof |
| CN1933110A (en) * | 2006-10-13 | 2007-03-21 | 鞍山市华辰电力器件有限公司 | Method for III family elements two-time spreading and raising large power transistor blocking current-voltage characteristics |
-
2011
- 2011-05-23 CN CN201110133071A patent/CN102208345B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6190947B1 (en) * | 1997-09-15 | 2001-02-20 | Zowie Technology Corporation | Silicon semiconductor rectifier chips and manufacturing method thereof |
| CN1933110A (en) * | 2006-10-13 | 2007-03-21 | 鞍山市华辰电力器件有限公司 | Method for III family elements two-time spreading and raising large power transistor blocking current-voltage characteristics |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934320A (en) * | 2014-03-18 | 2015-09-23 | 西安永电电气有限责任公司 | Large-current high-voltage rectifying tube and designing process thereof |
| CN104934320B (en) * | 2014-03-18 | 2018-08-07 | 西安永电电气有限责任公司 | High current high voltage rectifier pipe and design technology method |
| CN104282557B (en) * | 2014-09-22 | 2017-02-08 | 鞍山市良溪电力科技有限公司 | Method for manufacturing overtemperature self-protection thyristor for electric heating equipment |
| CN109755117A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | A method of FRGPP chip is made using printing technology |
| CN111244037A (en) * | 2020-03-11 | 2020-06-05 | 天水天光半导体有限责任公司 | Integrated manufacturing method of reverse voltage 40V or 60V bridge rectifier circuit |
| CN111244037B (en) * | 2020-03-11 | 2023-06-02 | 天水天光半导体有限责任公司 | Integrated manufacturing method of reverse voltage 40V or 60V bridge rectifier circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102208345B (en) | 2012-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102412172B (en) | Cut/ground silicon wafer surface cleaning method | |
| CN102208345B (en) | Method for producing KP rectifier chips by aluminum boride source through one-step perfect diffusion | |
| CN101593693B (en) | Method for preparing high-voltage SIDAC | |
| WO2015017956A1 (en) | Single-sided polishing method for monocrystalline silicon wafer used in solar battery | |
| CN101276856A (en) | Process and equipment for etching and drying silicon solar cell | |
| JP6553731B2 (en) | N-type double-sided battery wet etching method | |
| CN103489760B (en) | The method of SiC substrate homoepitaxy carbon silicon double-atomic-layer film | |
| CN108336169A (en) | A kind of production method of the P-type crystal silicon solar cell of passivating back | |
| CN101950781A (en) | Silicon chip carrier and making process for selective emitter solar cell | |
| CN106711280B (en) | A kind of production method of N-type double-side cell | |
| CN102185005A (en) | Method for manufacturing selective emitter battery | |
| CN101950780A (en) | Preparation method of selective emitter solar cell | |
| CN107516693B (en) | A kind of processing method of crystal silicon solar batteries polished silicon wafer | |
| CN104088018A (en) | Mono-crystalline silicon wafer texturing cleaning method and mono-crystalline texturing device | |
| WO2019042084A1 (en) | Method for selective texture preparation on surface of crystalline silicon wafer | |
| CN111229736A (en) | Cleaning method of graphite boat for manufacturing solar cell | |
| CN103078008A (en) | Preparation method of back side point contact of crystalline silicon | |
| CN103474332B (en) | Promote the lithographic method of netted growth Web Growth | |
| CN102255000B (en) | Preparing method of solar cell slice with pattern | |
| CN109461783A (en) | A kind of two-sided crystal silicon solar batteries and preparation method thereof | |
| CN108010990A (en) | A kind of production method of crystal silicon solar cell sheet | |
| CN107768481A (en) | A kind of solar battery sheet goes back of the body knot and polishing method | |
| CN106057974A (en) | Manufacturing method of back surface polishing crystalline silicon solar battery | |
| JP2013008753A (en) | Method for producing spherical photoelectric conversion element | |
| CN102110603B (en) | Structural design for PN junction embedded glass passivated device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121003 Termination date: 20210523 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |