CN102195234A - N-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and manufacturing method thereof - Google Patents
N-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to an n-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and a manufacturing method thereof, and belongs to the technical field of semiconductor light emitting devices and manufacturing methods thereof. The laser consists of a substrate 1, a p-type GaN epitaxial layer 2, a current lower limitation layer 3 and a lower electrode 5 which are prepared on the epitaxial layer 2 and independent of each other, an n-type ZnO-base material light emitting layer 4 prepared on the current lower limitation layer 3, an upper electrode 6 and the like, and is characterized in that: a multi-layer AlGaN/GaN thin film distributed bragg reflector (DBR) lower reflector 8 is grown and prepared between the substrate 1 and the p-type GaN epitaxial layer 2; an n-type broadband gap ZnO-base ternary system material current upper limitation layer 7 is prepared on the n-type ZnO-base material light emitting layer 4; and the upper electrode 6 and a multi-layer medium thin film DBR upper reflector 9 which are independent of each other are prepared on the current upper limitation layer 7. The n-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser has the advantages that: due to a controllable resonant cavity, the output power of the device can be enhanced; the direction of laser becomes better; and the application range of the device is expanded.
Description
Technical field
The invention belongs to light emitting semiconductor device and preparation method thereof technical field, particularly relate to Laser Devices structure based on the zno-based material and preparation method thereof.
Background technology
The GaN based material is being used widely in solid-state illumination field and message area.The band gap of ZnO and GaN and lattice constant are very approaching, and close photoelectric characteristic is arranged.But, comparing with GaN, ZnO has higher fusing point and exciton bind energy, the exciton gain is higher, epitaxial growth temperature is low, cost is low, easy etching and make the back road processing of epitaxial wafer easier, makes preparation of devices more convenient or the like.Therefore, zno-based luminous tube, laser etc. succeed in developing might replace or the part replace the GaN base photoelectric device, have bigger application prospect, particularly ZnO purple, ultraviolet light photo device more people pay attention to.
Because that is that all right at present is ripe for the preparation of the extension of ZnO monocrystal thin films, very complete uniformly continuous ZnO monocrystal thin films is difficult to obtain, the ZnO monocrystal thin films great majority of preparation are the films of C axle oriented growth at present, because the existence of grain boundary and defective, make that the luminescent device luminous efficiency of ZnO Homojeneous p-n Junction type is very low, it is luminous simultaneously often to be accompanied by the deep energy level relevant with defective, and this deep energy level emission wavelength is at visible light wave range, and it is often stronger than the emission of ultraviolet band edge.So people begin with the GaN material of thin film epitaxy technology of preparing comparative maturity and ZnO material in conjunction with the preparation luminescent device.People such as H.Zhu have just reported the Laser Devices of a kind of GaN material and the combination of ZnO material at document " Adv.Mater.21,1613 (2009) ".This device architecture as shown in Figure 1, by Al
2O
3 Substrate 1, epitaxially grown p type GaN epitaxial loayer 2 on the substrate 1, mutual discrete the MgO lower current limit preparative layer 3 and the bottom electrode 5 of preparation on the epitaxial loayer 2, the n type ZnO luminescent layer 4 of preparation on the lower current limit preparative layer 3, top electrode 6 parts such as grade that ZnO luminescent layer 4 prepares above constitute.
But because this Laser Devices do not prepare the controllable resonant chamber, it swashs, and to penetrate generally be that microcavity modeling effect by random scatter resonant cavity or ZnO nanocrystal causes, thereby the device power output is very low, and the directivity of laser is also bad.
Summary of the invention
Purpose of the present invention is exactly in order to overcome this difficulty of above-mentioned zno-based luminescent device, a kind of n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser and preparation method to be provided, to improve the device power output, improving the directivity of laser.
Technical scheme of the present invention is:
The zno-based vertical cavity surface emitting laser (seeing accompanying drawing 2 and description of drawings) of n type ZnO that the present invention is designed and p type GaN combination, by substrate 1, p type GaN epitaxial loayer 2, the mutual discrete lower current limit preparative layer 3 and the bottom electrode 5 of preparation on the epitaxial loayer 2, the n type zno-based material luminescent layer 4 of preparation on the lower current limit preparative layer 3, top electrode 6 parts such as grade constitute, it is characterized in that speculum 8 under growing and preparing multilayer Al GaN/GaN film DBR between substrate 1 and the p type GaN epitaxial loayer 2, preparation one deck n molded breadth band gap zno-based ternary system material upper current limit preparative layer 7, mutual discrete top electrode 6 and the dielectric multi-layer optical thin film DBR upper reflector 9 of preparation on upper current limit preparative layer 7 again above the n type ZnO luminescent layer 4.
GaN and AlGaN epitaxial loayer prepare with the ripe conventional MOCVD process of present technology.The growth preparation method of zno-based material is with molecular beam epitaxy (MBE), metal-organic chemical vapor deposition equipment (MOCVD), pulsed laser deposition (PLD), sputter (Sputtering), electron beam evaporation, spray pyrolysis and the preparation of collosol and gel methods such as (Sol-gel); The zno-based luminescent material comprises materials such as ZnO, ZnMgO, ZnBeO, ZnCdO, ZnNiO.Backing material is Al
2O
3Single crystalline substrate or with and the GaN material lattice mate n type SiC single crystalline substrate preferably, said here n molded breadth band gap zno-based ternary system material is the thin-film materials of energy gaps such as MgZnO, ZnBeO, ZnCdO, ZnNiO greater than zno-based material luminescent layer 4 energy gaps; Here said dielectric multi-layer optical thin film DBR upper reflector 9 is to be arranged by two kinds of different dielectric film cycles of refractive index to form, as many to SiO
2/ Si
3N
4, many to SiO
2/ ZrO
2, many to SiO
2/ TiO
2, many to Ta
2O
5/ SiO
2With many to HfO
2/ SiO
2Arrange Deng the dielectric film cycle.Upper and lower electrode material alloy materials such as Au, Ni-Au, Ti-Au, Zn-Au and Pt-Au.
Further, for the electric current with injection laser is limited in a zone that area is less, the present invention proposes four kinds of device architecture and preparation methods with electric current limited window 11.
A kind of is silicon dioxide flow restriction window structure n type ZnO and the p type GaN combination zno-based vertical cavity surface emitting laser (seeing accompanying drawing 3 and description of drawings) that powers on, by substrate 1, speculum 8 under the AlGaN/GaN film DBR of preparation multilayer on the substrate 1, the p type GaN epitaxial loayer 2 that following speculum 8 prepares above, the mutual discrete lower current limit preparative layer 3 and the bottom electrode 5 of preparation on the epitaxial loayer 2, the n type zno-based material luminescent layer 4 of preparation on the lower current limit preparative layer 3, the upper current limit preparative layer 7 that ZnO luminescent layer 4 prepares above, discrete mutually top electrode 6 and the dielectric multi-layer optical thin film DBR upper reflector 9 of preparation constitutes on the upper current limit preparative layer 7, it is characterized in that preparation layer of silicon dioxide current isolating layer 10 on upper current limit preparative layer 7, photoetching corrosion goes out electric current limited window 11, on silicon dioxide current isolating layer 10, prepare top electrode 6 again, leave light-emitting window 12 on the top electrode 6, the area of light-emitting window 12 is less than electric current limited window 11, top electrode 6 can touch upper current limit preparative layer 7 like this, carry out electric current and inject, 9 preparations of dielectric multi-layer optical thin film DBR upper reflector are at light window 12 places.
Second kind is electric current limited window structure n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser (seeing accompanying drawing 4 and description of drawings) in the silicon dioxide, by substrate 1, speculum 8 under the AlGaN/GaN film DBR of preparation multilayer on the substrate 1, the p type GaN epitaxial loayer 2 that following speculum 8 prepares above, the mutual discrete lower current limit preparative layer 3 and the bottom electrode 5 of preparation on the epitaxial loayer 2, the n type zno-based material luminescent layer 4 of preparation on the lower current limit preparative layer 3, the upper current limit preparative layer 7 that ZnO luminescent layer 4 prepares above, the top electrode 6 of preparation and dielectric multi-layer optical thin film DBR upper reflector 9 constitute on the upper current limit preparative layer 7, it is characterized in that preparation layer of silicon dioxide current isolating layer 10 on p type GaN epitaxial loayer 2, photoetching corrosion goes out electric current limited window 11, prepares lower current limit preparative layer 3 more successively at silicon dioxide current isolating layer 10 with above the electric current limited window 11, n type zno-based material luminescent layer 4, upper current limit preparative layer 7, have the top electrode 6 of light-emitting window 12 and prepare dielectric multi-layer optical thin film DBR upper reflector 9 at light-emitting window 12 places.
The third is that ion injects bombarding current limited window structure n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser (seeing accompanying drawing 5 and description of drawings), by substrate 1, speculum 8 under the AlGaN/GaN film DBR of preparation multilayer on the substrate 1, the p type GaN epitaxial loayer 2 that following speculum 8 prepares above, the mutual discrete lower current limit preparative layer 3 and the bottom electrode 5 of preparation on the epitaxial loayer 2, the n type zno-based material luminescent layer 4 of preparation on the lower current limit preparative layer 3, the upper current limit preparative layer 7 that ZnO luminescent layer 4 prepares above, prepare on the upper current limit preparative layer 7 to have the top electrode 6 of light-emitting window 12 and prepare dielectric multi-layer optical thin film DBR upper reflector 9 and constitute at light-emitting window 12 places, it is characterized in that injecting the bombardment method with ion prepares one deck high resistant current isolating layer 13 at zno-based material luminescent layer 4, to form electric current limited window 11; The patent No. that concrete preparation method can adopt us to invent is the preparation method of the tungsten filament mask secondary proton bombardment vertical cavity surface emitting laser of ZL 93118240.9, and also can adopt the patent No. is the preparation method of the angle-tilt ion injection type vertical cavity surface emitting laser of 02144725.X.
The 4th kind is that the MgO electric current is isolated limited window structure n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser (seeing accompanying drawing 6 and description of drawings), by substrate 1, speculum 8 under the AlGaN/GaN film DBR of preparation multilayer on the substrate 1, the p type GaN epitaxial loayer 2 that following speculum 8 prepares above, the mutual discrete lower current limit preparative layer 3 and the bottom electrode 5 of preparation on the epitaxial loayer 2, the n type zno-based material luminescent layer 4 of preparation on the lower current limit preparative layer 3, the upper current limit preparative layer 7 that ZnO luminescent layer 4 prepares above, prepare on the upper current limit preparative layer 7 to have the top electrode 6 of light-emitting window 12 and prepare dielectric multi-layer optical thin film DBR upper reflector 9 and constitute at light-emitting window 12 places, it is characterized in that making electric current with MgO current isolating layer 14 isolates to form electric current limited window 11, because the about 7.3eV of the energy gap of MgO, it is a dielectric material, only when it is very thin, electric current could be passed through and as lower current limit preparative layer 3, will isolate block current flow when thickness is thicker passes through; So this device architecture is MgO current isolating layer 14 thickness to be increased to can isolate block current flow and pass through, and the MgO thickness of lower current limit preparative layer 3 is the same with aforementioned schemes, be the MgO electric current to isolate 14 thickness be 100～2000 nanometers, be 3～80 nanometers at the MgO layer thickness of the lower current limit preparative layer 3 at electric current limited window 11 places.
P type GaN is because the energy that influences photon transition of impurity energy level is a lot of less than energy gap, and the photon that luminescent layer 4 is sent has absorption like this, so this vertical cavity surface emitting laser preferably makes the top light emitting structures.More than designed vertical cavity surface emitting laser all be this top light emitting structures, its light direction is seen arrow 15 among the figure.
Further, be injected into luminescent layer 4 for the output optical zone electric current of leaving at top electrode also can flow downward uniformly, the present invention proposes two kinds of device window structure and preparation methods with transparent conductive film 16 of being used for the zno-based vertical cavity surface emitting laser.
First kind is to adapt to the power on device window structure with transparent conductive film (seeing accompanying drawing 7 and description of drawings) of flow restriction window structure n type ZnO and p type GaN combination zno-based vertical-cavity surface emitting laser structure of silicon dioxide, the layer of silicon dioxide current isolating layer 10 for preparing above by upper current limit preparative layer 7, current isolating layer 10 photoetching corrosions go out electric current limited window 11, on silicon dioxide current isolating layer 10, prepare top electrode 6 again, leave light-emitting window 12 on the top electrode 6, the area of light-emitting window 12 is less than electric current limited window 11, the dielectric multi-layer optical thin film DBR upper reflector 9 of light-emitting window 12 places preparation constitutes, it is characterized in that electric current limited window 11 places that etch at silicon dioxide current isolating layer 10, on upper current limit preparative layer 7, preparation layer of transparent conductive film 16, same because the area of light-emitting window 12 is less than electric current limited window 11, top electrode 6 touches transparent conductive film 16, electric current is evenly flowed downward in the zone of light-emitting window 12, at light window 12 places, preparation dielectric multi-layer optical thin film DBR upper reflector 9 above the transparent conductive film 16.
Second kind is the device window structure with transparent conductive film (seeing accompanying drawing 8 and description of drawings) that adapts to the zno-based vertical-cavity surface emitting laser structure of other several electric current limited window structure n type ZnO and p type GaN combination, by preparation top electrode 6 above the upper current limit preparative layer 7, leave light-emitting window 12 on the top electrode 6, the dielectric multi-layer optical thin film DBR upper reflector 9 of light window 12 places preparation constitutes, it is characterized in that preparation layer of transparent conductive film 16 on upper current limit preparative layer 7, on transparent conductive film 16, prepare top electrode 6 again, at light window 12 places, preparation dielectric multi-layer optical thin film DBR upper reflector 9 above the transparent conductive film 16.
The ITO material film that transparent conductive film 16 usefulness described here are at present ripe, or with the ZnO that mixes Al, mix Ga ZnO, mix the ZnO transparent conductive film of In; The preparation method prepares with metal-organic chemical vapor deposition equipment (MOCVD), pulsed laser deposition (PLD), sputter (Sputtering), electron beam evaporation, spray pyrolysis and collosol and gel methods such as (Sol-gel).
The preparation method of n type ZnO of the present invention and p type GaN combination zno-based vertical cavity surface emitting laser, it is characterized in that: GaN epitaxial loayer 2, lower current limit preparative layer 3, ZnO luminescent layer 4 and upper current limit preparative layer 7 all use the MOCVD method to be prepared.
Effect of the present invention and benefit are:
The present invention has prepared the controllable resonant chamber of n type ZnO and p type GaN combination zno-based laser, can reduce the threshold current of laser, improves the device power output, and the direction of laser is improved, and has further expanded the range of application of device.
Description of drawings
Fig. 1 is the luminescent device structural representation of GaN material and the combination of ZnO material.
Fig. 2 is the zno-based vertical-cavity surface emitting laser structure schematic diagram of n type ZnO and p type GaN combination.
Fig. 3 is the zno-based vertical-cavity surface emitting laser structure schematic diagram of flow restriction window structure n type ZnO and p type GaN combination of powering on.
Fig. 4 is the zno-based vertical-cavity surface emitting laser structure schematic diagram of interior electric current limited window structure n type ZnO and p type GaN combination.
Fig. 5 is the zno-based vertical-cavity surface emitting laser structure schematic diagram that ion injects bombarding current limited window structure n type ZnO and p type GaN combination.
Fig. 6 is the zno-based vertical-cavity surface emitting laser structure schematic diagram that the MgO electric current is isolated limited window structure n type ZnO and p type GaN combination.
Fig. 7 is the structural representation that there is the transparent conductive film 16 of preparation at electric current limited window 11 places.
Fig. 8 is the structural representation that the transparent conductive film 16 of preparation is arranged above the upper current limit preparative layer 7.
Among the figure: 1 substrate; The 2GaN epitaxial loayer; 3 lower current limit preparative layers; 4ZnO sill luminescent layer; 5 bottom electrodes; 6 top electrodes; 7 upper current limit preparative layers; Speculum under the 8 multilayer Al GaN/GaN film DBR; 9 dielectric multi-layer optical thin film DBR upper reflectors; 10 silicon dioxide current isolating layers; 11 electric current limited window; 12 light-emitting windows; 13 high resistant current isolating layers; The 14MgO current isolating layer; 15 light direction arrows; 16 transparent conductive films.
Embodiment
Be described in detail specific embodiments of the invention below in conjunction with technical scheme and accompanying drawing.
Embodiment 1:
The flow restriction that powers on window structure n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser.This zno-based vertical-cavity surface emitting laser structure that powers on flow restriction window structure n type ZnO and p type GaN combination is seen accompanying drawing 3, and its preparation method is characterised in that all epitaxial loayers of device are all with the preparation of MOCVD method, with Al
2O
3Substrate is an example, uses ripe at present conventional MOCVD preparation method at Al
2O
3Speculum 8 under the substrate growth multilayer Al GaN/GaN film DBR, control the laser excitation wavelength λ of the centre wavelength of its reflection for design, its reflectivity can be 30%～99.99%, follow growing p-type GaN epitaxial loayer 2, its layer thickness control is N 1/2nd λ, N is an odd number, adopt the MOCVD method then, particularly with the special-purpose growth of the described ZnO film of No. 02100436.6 and ZL200410011164.0 patent MOCVD equipment MgO lower current limit preparative layer 3, n type ZnO luminescent layer 4 and MgZnO upper current limit preparative layer 7 of growth successively on p type GaN epitaxial loayer 2; When growth MgO lower current limit preparative layer 3 and MgZnO upper current limit preparative layer 7, with two luxuriant magnesium as the magnesium source, the magnesium source is carried with argon gas and is entered in the reative cell, carry out the chemical reaction growth with high purity oxygen, MgO lower current limit preparative layer 3 thickness will approach, be 3～80 nanometers, n type ZnO luminescent layer 4 layer thicknesses are 100～1000 nanometers, and MgZnO upper current limit preparative layer 7 is thick to be 200～3000 nanometers; The specific design and the control of MgO lower current limit preparative layer 3, n type ZnO luminescent layer 4 and MgZnO upper current limit preparative layer 7 these threeply degree are as the criterion so that the highest optical gain region of n type ZnO luminescent layer 4 is positioned at the crest place of light wave; Then, the deposited by electron beam evaporation platform is steam coating silicon dioxide current isolating layer 10 on MgZnO upper current limit preparative layer 7, thickness is 20～500 nanometers, photoetching and be etched away part MgO lower current limit preparative layer 3, n type ZnO luminescent layer 4 and MgZnO upper current limit preparative layer 7 then, preparation bottom electrode 5 on the p type GaN epitaxial loayer 2 that exposes in this zone; Simultaneously, chemical wet etching or with photoresist stripping technology etch electric current limited window 11, electric current limited window 11 can be that circle also can be a square, its diameter or the length of side can be between 5～500 microns, then, evaporation top electrode 6, the bottom electrode 5 of stripping technology protection with photoresist, etch light-emitting window 12 simultaneously, light-emitting window 12 and electric current limited window 11 have same circle or square, its diameter or the length of side can be between 3～490 microns less than electric current limited window 11, deposited by electron beam evaporation platform evaporation dielectric multi-layer optical thin film DBR upper reflector 9 again, the centre wavelength of same its reflection of control is the laser excitation wavelength λ of design, and its reflectivity can be 30%～99%; This structure devices also can adopt n type SiC single crystalline substrate.
Embodiment 2:
Interior electric current limited window structure n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser.The zno-based vertical-cavity surface emitting laser structure of electric current limited window structure n type ZnO and p type GaN combination is seen accompanying drawing 4 in this, its preparation method is characterised in that deposited by electron beam evaporation platform evaporation one layer thickness is the silicon dioxide current isolating layer 10 of 20～500 nanometers on p type GaN epitaxial loayer 2, photoetching corrosion goes out electric current limited window 11, and then preparing MgO lower current limit preparative layer 3, n type ZnO luminescent layer 4 and MgZnO upper current limit preparative layer 7 with the MOCVD method, preparation method and thickness requirement are with embodiment 1; The preparation of all the other each epitaxial loayers, electrode and dielectric multi-layer optical thin film DBR upper reflector 9 is also identical with embodiment 1.
Embodiment 3:
Ion injects the zno-based vertical cavity surface emitting laser of bombarding current limited window structure n type ZnO and p type GaN combination.This ion injects the zno-based vertical-cavity surface emitting laser structure of bombarding current limited window structure n type ZnO and p type GaN combination and sees accompanying drawing 5, its preparation method is characterised in that injecting the bombardment method with ion prepares one deck high resistant current isolating layer 13 at zno-based material luminescent layer 4, to form electric current limited window 11; Its preparation process is summarized as follows, bearing speculum 8 under the long multilayer Al GaN/GaN film DBR on the substrate successively with the MOCVD method, p type GaN epitaxial loayer 2, lower current limit preparative layer 3, behind n type zno-based material luminescent layer 4 and the upper current limit preparative layer 7, the patent No. that adopts us to invent is the preparation method of the tungsten filament mask secondary proton bombardment vertical cavity surface emitting laser of ZL93118240.9, also can adopt the patent No. is that the preparation method of the angle-tilt ion injection type vertical cavity surface emitting laser of 02144725.X prepares high resistant current isolating layer 13 and electric current limited window 11, prepare top electrode 6 and light-emitting window 12 simultaneously, the ion of injection can be hydrogen ion (H
+), also can be helium ion (He
++), can also be other ions, controlling energy that ion injects and dosage makes high resistant current isolating layer 13 be formed on centre in the zno-based material luminescent layer 4, as shown in Figure 5, epitaxial loayer above the annealing back high resistant current isolating layer 13 can also conduct electricity, and electric current could produce the charge carrier recombination luminescence from the zone that electrode 6 flow in the electric current limited window 11 like this; Then, chemical wet etching falls the subregion epitaxial loayer above the p type GaN epitaxial loayer 2, at this zone preparation bottom electrode 5.
Embodiment 4:
The MgO electric current is isolated limited window structure n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser.This MgO electric current isolates limited window structure n type ZnO and p type GaN combination zno-based vertical-cavity surface emitting laser structure is seen accompanying drawing 6, its preparation method is characterised in that the thicker MgO electric current of growth isolates 14 above the p type GaN epitaxial loayer 2, its thickness is 100～2000 nanometers, then, photoetching corrosion goes out electric current limited window 11, the MgO film that keeps 3～80 nanometer thickness at electric current limited window 11 places is with as lower current limit preparative layer 3; Also can be the MgO electric current be isolated 14 and be etched away fully, and then the thickness of growing is the MgO film of 3～80 nanometer thickness, as lower current limit preparative layer 3 at electric current limited window 11 places; Other preparation methods get final product with embodiment 2.
Claims (8)
1. n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser, by substrate (1), p type GaN epitaxial loayer (2), epitaxial loayer (2) is gone up the mutual discrete lower current limit preparative layer (3) and the bottom electrode (5) of preparation, lower current limit preparative layer (3) is gone up the n type zno-based material luminescent layer (4) of preparation, top electrode parts such as (6) constitute, it is characterized in that speculum (8) under growing and preparing multilayer Al GaN/GaN film DBR between substrate (1) and the p type GaN epitaxial loayer (2), preparation one deck n molded breadth band gap zno-based ternary system material upper current limit preparative layer (7) above the n type ZnO luminescent layer (4) is gone up preparation discrete top electrode (6) and dielectric multi-layer optical thin film DBR upper reflector (9) mutually at upper current limit preparative layer (7) again.
2. n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser, by substrate (1), substrate (1) is gone up speculum (8) under the AlGaN/GaN film DBR for preparing multilayer, the p type GaN epitaxial loayer (2) that following speculum (8) prepares above, epitaxial loayer (2) is gone up the mutual discrete lower current limit preparative layer (3) and the bottom electrode (5) of preparation, lower current limit preparative layer (3) is gone up the n type zno-based material luminescent layer (4) of preparation, the upper current limit preparative layer (7) that ZnO luminescent layer (4) prepares above, upper current limit preparative layer (7) is gone up the discrete mutually top electrode (6) of preparation and dielectric multi-layer optical thin film DBR upper reflector (9) constitutes, it is characterized in that preparation layer of silicon dioxide current isolating layer (10) on upper current limit preparative layer (7), photoetching corrosion goes out electric current limited window (11), on silicon dioxide current isolating layer (10), prepare top electrode (6) again, leave light-emitting window (12) on the top electrode (6), the area of light-emitting window (12) is less than electric current limited window (11), top electrode (6) can touch upper current limit preparative layer (7) like this, carry out electric current and inject, dielectric multi-layer optical thin film DBR upper reflector (9) preparation is located at light window (12).
3. n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser, by substrate (1), substrate (1) is gone up speculum (8) under the AlGaN/GaN film DBR for preparing multilayer, the p type GaN epitaxial loayer (2) that following speculum (8) prepares above, epitaxial loayer (2) is gone up the mutual discrete lower current limit preparative layer (3) and the bottom electrode (5) of preparation, lower current limit preparative layer (3) is gone up the n type zno-based material luminescent layer (4) of preparation, the upper current limit preparative layer (7) that ZnO luminescent layer (4) prepares above, top electrode (6) and dielectric multi-layer optical thin film DBR speculum (9) that upper current limit preparative layer (7) is gone up preparation constitute, it is characterized in that preparation layer of silicon dioxide current isolating layer (10) on p type GaN epitaxial loayer (2), photoetching corrosion goes out electric current limited window (11), prepares lower current limit preparative layer (3) more successively at silicon dioxide current isolating layer (10) with above the electric current limited window (11), n type zno-based material luminescent layer (4), upper limiting layer (7), have the top electrode (6) of light-emitting window (12) and locate to prepare dielectric multi-layer optical thin film DBR upper reflector (9) at light-emitting window (12).
4. n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser, by substrate (1), substrate (1) is gone up speculum (8) under the AlGaN/GaN film DBR for preparing multilayer, the p type GaN epitaxial loayer (2) that following speculum (8) prepares above, epitaxial loayer (2) is gone up the mutual discrete lower current limit preparative layer (3) and the bottom electrode (5) of preparation, lower current limit preparative layer (3) is gone up the n type zno-based material luminescent layer (4) of preparation, the upper current limit preparative layer (7) that ZnO luminescent layer (4) prepares above, upper current limit preparative layer (7) is gone up to prepare the top electrode (6) that has light-emitting window (12) and locate to prepare dielectric multi-layer optical thin film DBR upper reflector (9) at light-emitting window (12) and is constituted, it is characterized in that injecting the bombardment method with ion prepares one deck high resistant current isolating layer (13) at zno-based material luminescent layer (4), to form electric current limited window (11).
5. n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser, by substrate (1), substrate (1) is gone up speculum (8) under the AlGaN/GaN film DBR for preparing multilayer, the p type GaN epitaxial loayer (2) that following speculum (8) prepares above, epitaxial loayer (2) is gone up the mutual discrete lower current limit preparative layer (3) and the bottom electrode (5) of preparation, lower current limit preparative layer (3) is gone up the n type zno-based material luminescent layer (4) of preparation, the upper current limit preparative layer (7) that ZnO luminescent layer (4) prepares above, upper current limit preparative layer (7) is gone up to prepare the top electrode (6) that has light-emitting window (12) and locate to prepare dielectric multi-layer optical thin film DBR upper reflector (9) at light-emitting window (12) and is constituted, it is characterized in that making electric current with MgO current isolating layer (14) isolates to form electric current limited window (11), the thickness that the MgO electric current is isolated (14) is 100～2000 nanometers, and the MgO layer thickness of the lower current limit preparative layer of locating in electric current limited window (11) (3) is 3～80 nanometers.
6. device window structure that is used for the zno-based vertical cavity surface emitting laser with transparent conductive film, the layer of silicon dioxide current isolating layer (10) for preparing above by upper current limit preparative layer (7), current isolating layer (10) photoetching corrosion goes out electric current limited window (11), on silicon dioxide current isolating layer (10), prepare top electrode (6) again, leave light-emitting window (12) on the top electrode (6), the area of light-emitting window (12) is less than electric current limited window (11), the dielectric multi-layer optical thin film DBR upper reflector (9) that light window (12) is located to prepare constitutes, it is characterized in that the electric current limited window (11) that etches at silicon dioxide current isolating layer (10) locates, on upper current limit preparative layer (7), preparation layer of transparent conductive film (16), same because the area of light-emitting window (12) is less than electric current limited window (11), top electrode (6) touches transparent conductive film (16), electric current is evenly flowed downward in the zone of light-emitting window (12), locate preparation dielectric multi-layer optical thin film DBR upper reflector (9) above the transparent conductive film (16) at light window (12).
7. according to the described a kind of device window structure that is used for the zno-based vertical cavity surface emitting laser of claim (6) with transparent conductive film, by preparation top electrode (6) above the upper current limit preparative layer (7), leave light-emitting window (12) on the top electrode (6), the dielectric multi-layer optical thin film DBR upper reflector (9) that light-emitting window (12) is located to prepare constitutes, it is characterized in that preparation layer of transparent conductive film (16) on upper current limit preparative layer (7), go up preparation top electrode (6) at transparent conductive film (16) again, locate preparation dielectric multi-layer optical thin film DBR upper reflector (9) above the transparent conductive film (16) at light window (12).
8. according to claim 1,2,3,4,5 described a kind of n type ZnO and p type GaN combination zno-based vertical cavity surface emitting laser preparation method, it is characterized in that: GaN epitaxial loayer (2), lower current limit preparative layer (3), ZnO luminescent layer (4) and upper current limit preparative layer (7) all use the MOCVD method to be prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010128998 CN102195234B (en) | 2010-03-18 | 2010-03-18 | N-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and manufacturing method thereof |
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Cited By (7)
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|---|---|---|---|---|
| CN102508940A (en) * | 2011-09-30 | 2012-06-20 | 哈尔滨师范大学 | Method for analog designing of active area of AlGaN/GaN terahertz quantum cascade laser |
| CN105762243A (en) * | 2016-03-31 | 2016-07-13 | 浙江大学 | Light-emitting diode and laser of p-GaN/ZnO-based multi-quantum well/n-ZnO structure and preparation method |
| CN105957928A (en) * | 2016-05-31 | 2016-09-21 | 华灿光电股份有限公司 | Resonant cavity light-emitting diode and manufacturing method therefor |
| CN106848837A (en) * | 2017-03-31 | 2017-06-13 | 中国科学院长春光学精密机械与物理研究所 | A kind of vertical cavity surface emitting laser for miniature atomic sensor |
| CN109888612A (en) * | 2019-04-17 | 2019-06-14 | 中国科学院长春光学精密机械与物理研究所 | Electric pump deep ultraviolet AlGaN semiconductor laser and preparation method thereof |
| CN112189284A (en) * | 2018-05-25 | 2021-01-05 | 度亘激光技术（苏州）有限公司 | Multi-region semiconductor laser |
| CN114024212A (en) * | 2021-10-19 | 2022-02-08 | 东南大学 | Based on n-ZnO/PEDOT/HfO2Ultraviolet laser diode of/p-GaN and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102508940A (en) * | 2011-09-30 | 2012-06-20 | 哈尔滨师范大学 | Method for analog designing of active area of AlGaN/GaN terahertz quantum cascade laser |
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| CN105762243A (en) * | 2016-03-31 | 2016-07-13 | 浙江大学 | Light-emitting diode and laser of p-GaN/ZnO-based multi-quantum well/n-ZnO structure and preparation method |
| CN105957928A (en) * | 2016-05-31 | 2016-09-21 | 华灿光电股份有限公司 | Resonant cavity light-emitting diode and manufacturing method therefor |
| CN105957928B (en) * | 2016-05-31 | 2018-10-09 | 华灿光电股份有限公司 | A kind of resonator light emitting diode and its manufacturing method |
| CN106848837A (en) * | 2017-03-31 | 2017-06-13 | 中国科学院长春光学精密机械与物理研究所 | A kind of vertical cavity surface emitting laser for miniature atomic sensor |
| CN106848837B (en) * | 2017-03-31 | 2019-05-21 | 中国科学院长春光学精密机械与物理研究所 | A kind of vertical cavity surface emitting laser for miniature atomic sensor |
| CN112189284A (en) * | 2018-05-25 | 2021-01-05 | 度亘激光技术（苏州）有限公司 | Multi-region semiconductor laser |
| CN109888612A (en) * | 2019-04-17 | 2019-06-14 | 中国科学院长春光学精密机械与物理研究所 | Electric pump deep ultraviolet AlGaN semiconductor laser and preparation method thereof |
| CN114024212A (en) * | 2021-10-19 | 2022-02-08 | 东南大学 | Based on n-ZnO/PEDOT/HfO2Ultraviolet laser diode of/p-GaN and preparation method |
| CN114024212B (en) * | 2021-10-19 | 2023-12-05 | 东南大学 | Based on n-ZnO/PEDOT/HfO 2 Ultraviolet laser diode of/p-GaN and preparation method |
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