CN102161179A - Wafer grinding device - Google Patents

Wafer grinding device Download PDF

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Publication number
CN102161179A
CN102161179A CN2010106140888A CN201010614088A CN102161179A CN 102161179 A CN102161179 A CN 102161179A CN 2010106140888 A CN2010106140888 A CN 2010106140888A CN 201010614088 A CN201010614088 A CN 201010614088A CN 102161179 A CN102161179 A CN 102161179A
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wafer
grinding
drive
workbench
gear
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Granted
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CN2010106140888A
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CN102161179B (en
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奚耀华
夏澍
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Qingdao Huaxinjingdian Technology Co ltd
Qingdao Xinjiaxing Electronic Technology Co ltd
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QINGDAO ISTARWAFER TECHNOLOGY Co Ltd
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Publication of CN102161179A publication Critical patent/CN102161179A/en
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Abstract

The invention relates to a wafer grinding device for sapphire lining wafers. The invention provides a wafer grinding device which has high efficiency and avoids wafer edge collapse. The wafer grinding device comprises a base, a wafer carrier, a workbench, a grinding mechanism and a pressing mechanism, wherein the base is used for supporting components of the grinding device; the wafer carrier is used for fixing and holding the wafer; the workbench is used for supporting the wafer carrier and is installed on the base and comprises a first drive mechanism and a second drive mechanism, the first drive mechanism drives the workbench to do traverse and vertical reciprocation motion, and the second drive mechanism drives the wafer carrier to spin; the grinding mechanism is positioned above the workbench for grinding wafers and comprises a grinding head, a drive motor and a connection part, the drive motor drives the grinding mechanism to spin, and the connection part is used for fixing the grinding head; and the pressing mechanism is positioned above the grinding mechanism for applying a press onto the grinding head. The wafer grinding device basically eliminates the phenomenon of product edge collapse, and uses a single grinding head to grind a single wafer instead of multiple wafers adhered to the wafer carrier, so grinding efficiency is greatly improved.

Description

Wafer polishing apparatus
Technical field
The present invention relates to a kind of opto-electronic information technology field, particularly a kind of wafer polishing apparatus that is used for the Sapphire Substrate wafer.
Background technology
Sapphire wafer is used as the superiority of backing material: sapphire is a kind of alumina single crystal material, has very high hardness, be the backing material that generally adopts of present LED industry, the matrix that is used as the growth of gallium nitride homepitaxy is with light emitting diodes such as production blue lights.Substrate processing is a main difficult problem in the LED industrial chain, not only needs the precision that reaches very high, especially for the substrate of making patterned wafers, require flatness (TTV) less than 5 microns, edge ring simultaneously, also will reach higher working (machining) efficiency and certain economic less than 30 microns.
Sapphire is because its hardness height and fragility are big, the machining difficulty, and sapphire is the most a kind of backing material of widespread usage.Have high requirements as the surface flatness of backing material to plane of crystal.Studies show that the quality of device depends on the Surface Machining of substrate to a great extent.Especially complicated more to the Sapphire Substrate wafer precision processing technology that is used for the GaN growth, be the difficult problem of present primary study.The poor quality, the Sapphire Substrate wafer that smoothness is not enough can not grown thereon and is satisfied the required GaN film of light emitting diode (LED).
The ubiquitous problem of wafer of conventional wafer lapping device processing is exactly collapse the easily problem on limit of Waffer edge.The reason that causes this problem is that the abrasion path rule has caused edge abrasion to form the limit of collapsing easily greater than inside.The qualification rate of the finished product that the lapping device of the Sapphire Substrate of prior art obtains is low, and long processing time causes high heterodyne and cost height, and index such as surface roughness, flatness, wafer thickness tolerance all can not reach the requirement of graphics processing substrate wafer.
Develop rapidly along with photoelectric technology, photovoltaic is to the increase day by day of the demand of saphire substrate material, in order to satisfy the demand of sapphire optics development, be badly in need of that a kind of high efficiency, percent defective are low, product smoothness height, lapping device that cost is low.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of wafer polishing apparatus, its high efficiency, product smoothness height, the product limit phenomenon of collapsing significantly reduces.
Technical scheme of the present invention is: a kind of wafer polishing apparatus comprises the base station 1 of the element that is used to support lapping device; Be used for fixing the chip carrier 2 that keeps described wafer 201; Be used to support described chip carrier 2 and be installed on workbench 3 on the described base station 1, it comprises in order to drive it and produces and radially move back and forth and first driving mechanism 310 of front-rear reciprocation movement and in order to drive second driving mechanism 320 that described chip carrier 2 generations rotatablely move; Be positioned at the top of described workbench 3, be used to grind the grinding mechanism 4 of described wafer 201, it comprises grinding head 401, be arranged at described grinding head 401 tops and be used to drive drive motors 402 that its generation rotatablely moves and the coupling components 403 that is used for fixing described grinding head 401; Be positioned at described grinding mechanism 4 tops, be used for pressing mechanism 5 that described grinding head 401 is exerted pressure, preferred pneumatic shuttle.Wherein, the coverage of grinding head 401 is slightly less than wafer 201 surfaces, makes the edge grinding time be less than inside slightly, and the grinding on entire wafer surface is even like this, reduces the generation on the limit of collapsing.
On the described chip carrier 2 pore 202 is set, in order to the vacuum suction wafer.Adopt the mode of vacuum suction to keep wafer, can avoid the problem of deterioration of the flatness that caused because of the wax bonding mode and the cleaning problem of wax.
Described coupling components 403 comprises travel(l)ing rest 404 and support arm 405, and an end of support arm 405 is fixedly connected on the travel(l)ing rest 404, and distributing on the support arm 405 is provided with described grinding head 401.
Described first driving mechanism 310 is the screw mechanism that two square crossings are provided with, be positioned at the bottom of workbench 3, comprise in order to drive workbench 3 producing second leading screw 312 that radially moves back and forth first leading screw 311 and produce front-rear reciprocation movements in order to driving workbench 3.First leading screw 311 drives workbench 3 and produces when radially moving back and forth, and drives the chip carrier 2 that is arranged on the workbench 3 and does radially reciprocating motion; When second leading screw 312 drives workbench 3 generation front-rear reciprocation movements, drive the chip carrier 2 that is arranged on the workbench 3 and do front-rear reciprocation movement.
Described second driving mechanism 320 comprises motor 321 and drive disk assembly, and motor 321 passes through drive disk assembly connecting wafer carrier 2, and drives its rotation.
Described drive disk assembly is gear and rotating shaft, its middle gear comprises output gear 322, governor gear 323 and driven gear, output gear 322 connects the output shaft 328 of motor 321, governor gear 323 and output gear 322 engagements, governor gear 323 and first driven gear, 324 upper and lower settings are in first rotating shaft 325, and first driven gear 324 meshes with second driven gear 326 and the 3rd driven gear 327 respectively.Also can replace gear drive with belt pulley.Wherein governor gear 323 is different with the diameter of output gear 322, and in order to change rotating speed, governor gear 323 is all identical with the diameter of each driven gear, makes each chip carrier 2 have identical rotating speed.
Beneficial effect of the present invention is: traditional grinding technique has caused taking place frequently of the limit phenomenon of collapsing because wafer is inner big with edge grinding amount difference; Be exactly in addition the process of lapping time long, make work efficiency low.Font abrasion path that the present invention adopts irregular " 8 ", the milling time at balanced substrate interior and edge has been eliminated the phenomenon on the limit of collapsing basically; Grinding mechanism of the present invention in addition adopts the mode of single grinding head single-chip to replace traditional polycrystalline sheet to stick to mode on the chip carrier, has improved grinding efficiency greatly.
Description of drawings
Fig. 1 is an overall structure schematic diagram of the present invention;
Fig. 2 is the position view of grinding mechanism 4 and workbench 3 among the present invention;
Fig. 3 is the structural representation of chip carrier 2 among the present invention;
Fig. 4 is the distribution schematic diagram of chip carrier 2 on workbench 3 among the present invention;
Fig. 5 is the structural representation of coupling mechanism 403 among the present invention;
Fig. 6 is the structural representation of second driving mechanism 320 among the present invention;
Fig. 7 is the relative motion schematic diagram of grinding head 401 and chip carrier 2 among the present invention.
Wherein, 1-base station, 2-chip carrier, the 3-workbench, 4-grinding mechanism, 5-pressing mechanism, the 201-wafer, 202-pore, 310-first driving mechanism, 311-first leading screw, 312-second leading screw, 320-second driving mechanism, the 321-motor, 322-output gear, 323-governor gear, 324-first driven gear, 325-first rotating shaft, 326-second driven gear, 327-the 3rd driven gear, the output shaft of 328-motor 321, the 401-grinding head, 402-drive motors, 403-coupling components, the 404-travel(l)ing rest, the 405-support arm.
The specific embodiment
Below in conjunction with description of drawings the present invention.
Referring to Fig. 1, the present invention includes base station 1, it is used to support the element of lapping device; Chip carrier 2, it is used for fixing and keeps wafer 201; Workbench 3, it is used to support described chip carrier 2 and is installed on base station 1; Grinding mechanism 4, it is used for grinding wafers 201, is positioned at the top of workbench 3; Pressing mechanism 5, it is used for described grinding head 401 is exerted pressure, and is positioned at described grinding mechanism 4 tops, and pressing mechanism 5 adopts pneumatic shuttle.
Referring to Fig. 2 and Fig. 5, grinding mechanism 4 comprises grinding head 401, be arranged at described grinding head 401 tops and be used to drive drive motors 402 that its generation rotatablely moves and the coupling components 403 that is used for fixing described grinding head 401.Wherein coupling components 403 comprises travel(l)ing rest 404 and support arm 405, and an end of support arm 405 is fixedly connected on the travel(l)ing rest 404, and distributing on the support arm 405 is provided with described grinding head 401.Wherein, the coverage of grinding head 401 makes the edge grinding time be less than inside slightly less than wafer 201 surfaces, and the grinding on entire wafer surface is even like this, reduces the generation on the limit of collapsing.
Referring to Fig. 1 and Fig. 6, workbench 3 comprises in order to drive its first driving mechanism 310 that produces radially reciprocating motion and front-rear reciprocation movement and to produce second driving mechanism 320 that rotatablely moves in order to drive described chip carrier 2; Described first driving mechanism 310 is the screw mechanism that two square crossings are provided with, be positioned at the bottom of workbench 3, comprise in order to drive workbench 3 producing second leading screw 312 that radially moves back and forth first leading screw 311 and produce front-rear reciprocation movements in order to driving workbench 3.First leading screw 311 drives workbench 3 and produces when radially moving back and forth, and drives the chip carrier 2 that is arranged on the workbench 3 and does radially reciprocating motion; When second leading screw 312 drives workbench 3 generation front-rear reciprocation movements, drive the chip carrier 2 that is arranged on the workbench 3 and do front-rear reciprocation movement.Described second driving mechanism 320 comprises motor 321 and drive disk assembly, and motor 321 passes through drive disk assembly connecting wafer carrier 2, and drives its rotation.Drive disk assembly adopts gear and rotating shaft, its middle gear comprises output gear 322, governor gear 323 and driven gear, output gear 322 connects the output shaft 328 of motor 321, governor gear 323 and output gear 322 engagements, governor gear 323 and first driven gear, 324 upper and lower settings are in first rotating shaft 325, and first driven gear 324 meshes with second driven gear 326 and the 3rd driven gear 327 respectively.Also can replace gear drive with belt pulley.Wherein governor gear 323 is different with the diameter of output gear 322, and in order to change rotating speed, governor gear 323 is all identical with the diameter of each driven gear, makes each chip carrier 2 have identical rotating speed.
Referring to Fig. 3, pore 202 is set, on the chip carrier 2 in order to the vacuum suction wafer.Adopt the mode of vacuum suction to keep wafer, can avoid the problem of deterioration of the flatness that caused because of the wax bonding mode and the cleaning problem of wax.
Referring to Fig. 4, a plurality of chip carriers 2 evenly distribute on the workbench 3.
Referring to Fig. 1-Fig. 6, wafer 201 is passed through pore 202 vacuum suction to chip carrier 2.Start the motor 321 of second driving mechanism 320, drive output gear 322 and rotate, regulate rotating speed, drive first driven gear 324 by first rotating shaft 325 and rotate, thereby drive chip carrier 2 rotations that are installed in first rotating shaft 325 by governor gear 323.First driven gear 324 is respectively at second driven gear 326 and the engagement of the 3rd driven gear 327, and other driven gears have respectively and these three driven gears engagements, thereby realizes being installed in a plurality of chip carriers 2 on the workbench 3 with identical rotating speed rotation.When chip carrier 2 drove wafer 201 rotations of adsorbing on it, workbench 3 drove chip carrier 2 and goes up the wafer 201 that adsorbs by first driving mechanism 310 and radially moves back and forth and front-rear reciprocation movement.A plurality of grinding heads 401 rotation under the effect of drive motors 402 of grinding mechanism 4, the switched in opposite that turns to chip carrier 2 supporting of grinding head 401 with it, rotating speed is identical.Pressing mechanism 5 orders about grinding head 401 and pushes down wafer 201 on the chip carrier 2 with certain pressure.As shown in Figure 7, grinding head 401 begins from an edge of wafer 201, and grinding head 401 and wafer 201 are backwards rotation; Beginning grinding head 401 move downwards, simultaneously chip carrier 2 and on wafer 201 move right, make that grinding head 401 and wafer 201 leftmost edges are collided in the motion on the way; Grinding head 401 moves downward then, and chip carrier 2 and on wafer 201 to left movement, grinding head 401 moves upward then, chip carrier 2 and on wafer 201 move right, move in circles, on the wafer 201 certain a bit presents irregular figure of eight motion path with respect to grinding head 401, to avoid because of wafer that the abrasion path rule the causes limit problem of collapsing.

Claims (8)

1. a wafer polishing apparatus is characterized in that, comprises
Be used to support the base station (1) of the element of lapping device;
Be used for fixing the chip carrier (2) that keeps described wafer (201);
Be used to support described chip carrier (2) and be installed on workbench (3) on the described base station (1), it comprises in order to drive it and produces and radially move back and forth and first driving mechanism (310) of front-rear reciprocation movement and in order to drive second driving mechanism (320) that described chip carrier (2) generation rotatablely moves;
Be positioned at the top of described workbench (3), be used to grind the grinding mechanism (4) of described wafer (201), it comprises grinding head (401), be arranged at described grinding head (401) top and be used to drive drive motors (402) that its generation rotatablely moves and the coupling components (403) that is used for fixing described grinding head (401);
Be positioned at described grinding mechanism (4) top, be used to make described grinding head (401) to press to the pressing mechanism (5) of described wafer (201).
2. wafer polishing apparatus according to claim 1 is characterized in that, pore (202) is set, the vacuum suction wafer on the described chip carrier (2).
3. Sapphire Substrate wafer polishing apparatus according to claim 1, it is characterized in that, described coupling components (403) comprises travel(l)ing rest (404) and support arm (405), one end of support arm (405) is fixedly connected on the travel(l)ing rest (404), and support arm (405) is gone up to distribute described grinding head (401) is set.
4. wafer polishing apparatus according to claim 1, it is characterized in that, described first driving mechanism (310) is the screw mechanism that two square crossings are provided with, be positioned at the bottom of described workbench (3), comprise in order to drive described workbench (3) producing and radially moving back and forth first leading screw (311) and in order to drive second leading screw (312) that described workbench (3) produces front-rear reciprocation movement.
5. wafer polishing apparatus according to claim 1 is characterized in that, described second driving mechanism (320) comprises motor (321) and drive disk assembly, and motor (321) connects described chip carrier (2) by drive disk assembly, and drives its rotation.
6. wafer polishing apparatus according to claim 5, it is characterized in that, described drive disk assembly is gear and rotating shaft, its middle gear comprises output gear (322), governor gear (323) and driven gear, output gear (322) connects the output shaft (328) of motor (321), governor gear (323) and output gear (322) engagement, governor gear (323) and first driven gear (324) upper and lower settings are in first rotating shaft (325), and first driven gear (324) meshes with second driven gear (326) and the 3rd driven gear (327) respectively.
7. wafer polishing apparatus according to claim 5 is characterized in that, described drive disk assembly is belt pulley and rotating shaft.
8. wafer polishing apparatus according to claim 1 is characterized in that, described pressing mechanism (5) adopts pneumatic shuttle.
CN201010614088.8A 2010-12-30 2010-12-30 Wafer grinding device Active CN102161179B (en)

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102909650A (en) * 2012-11-01 2013-02-06 成都精密光学工程研究中心 Surface processing method of strip laser medium
CN102950523A (en) * 2011-08-30 2013-03-06 浚鑫科技股份有限公司 Silicon-chip grinding device
CN105014526A (en) * 2015-07-27 2015-11-04 尚德太阳能电力有限公司 Automatic polishing machine and automatic polishing method of silk-screen printing scraping strip
CN106272010A (en) * 2015-05-25 2017-01-04 蓝思科技股份有限公司 A kind of abrasive polishing method of sapphire minute surface substrate indent flat surface
CN106826537A (en) * 2016-12-28 2017-06-13 重庆晶宇光电科技有限公司 Wafer grinding equipment with dust-absorbing function
CN106826406A (en) * 2016-12-27 2017-06-13 重庆晶宇光电科技有限公司 Wafer processing method
CN106826491A (en) * 2016-12-27 2017-06-13 重庆晶宇光电科技有限公司 For the process equipment of wafer grinding
CN108177040A (en) * 2017-11-24 2018-06-19 苏州中拓专利运营管理有限公司 A kind of reinforcing chip debarring process
CN108544364A (en) * 2018-05-24 2018-09-18 镇江金莱宝光电有限公司 A kind of sapphire stereo omnibearing formula grinding device
CN110561264A (en) * 2019-10-10 2019-12-13 吴信任 Crystal bar outer diameter grinding equipment for semiconductor components and parts
CN111390750A (en) * 2020-03-25 2020-07-10 福建北电新材料科技有限公司 Wafer surface processing device
CN112757152A (en) * 2020-12-31 2021-05-07 福建省将乐县长兴电子有限公司 Wafer grinding device

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JPH1199470A (en) * 1997-07-17 1999-04-13 Canon Inc Polishing device
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CN1938122A (en) * 2004-03-25 2007-03-28 揖斐电株式会社 Vacuum chuck and suction board
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SU607655A2 (en) * 1975-12-08 1978-05-25 Всесоюзный заочный машиностроительный институт Device for obtaining curvilinear paths
US5762544A (en) * 1995-10-27 1998-06-09 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
JPH10315103A (en) * 1997-05-16 1998-12-02 Okamoto Kosaku Kikai Seisakusho:Kk Grinding/polishing method and device therefor
JPH1199470A (en) * 1997-07-17 1999-04-13 Canon Inc Polishing device
US20040102139A1 (en) * 2000-09-28 2004-05-27 Sharp Kabushiki Kaisha Method of manufacturing silicon wafer
JP2003326456A (en) * 2002-05-08 2003-11-18 Disco Abrasive Syst Ltd Polishing device
JP2005254416A (en) * 2004-03-15 2005-09-22 Okamoto Machine Tool Works Ltd Polishing method of square work
CN1938122A (en) * 2004-03-25 2007-03-28 揖斐电株式会社 Vacuum chuck and suction board
CN201989044U (en) * 2010-12-30 2011-09-28 青岛嘉星晶电科技股份有限公司 Wafer grinding device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102950523A (en) * 2011-08-30 2013-03-06 浚鑫科技股份有限公司 Silicon-chip grinding device
CN102909650B (en) * 2012-11-01 2015-04-08 成都精密光学工程研究中心 Surface processing method of strip laser medium
CN102909650A (en) * 2012-11-01 2013-02-06 成都精密光学工程研究中心 Surface processing method of strip laser medium
CN106272010A (en) * 2015-05-25 2017-01-04 蓝思科技股份有限公司 A kind of abrasive polishing method of sapphire minute surface substrate indent flat surface
CN105014526B (en) * 2015-07-27 2018-01-05 尚德太阳能电力有限公司 The automatic sander and automatically grinding method of scraping bar for silk screen printing
CN105014526A (en) * 2015-07-27 2015-11-04 尚德太阳能电力有限公司 Automatic polishing machine and automatic polishing method of silk-screen printing scraping strip
CN106826406A (en) * 2016-12-27 2017-06-13 重庆晶宇光电科技有限公司 Wafer processing method
CN106826491A (en) * 2016-12-27 2017-06-13 重庆晶宇光电科技有限公司 For the process equipment of wafer grinding
CN106826491B (en) * 2016-12-27 2018-09-21 重庆晶宇光电科技有限公司 Process equipment for wafer grinding
CN106826406B (en) * 2016-12-27 2019-06-14 重庆晶宇光电科技有限公司 Wafer processing method
CN106826537A (en) * 2016-12-28 2017-06-13 重庆晶宇光电科技有限公司 Wafer grinding equipment with dust-absorbing function
CN106826537B (en) * 2016-12-28 2019-03-15 重庆晶宇光电科技有限公司 Wafer grinding equipment with dust-absorbing function
CN108177040A (en) * 2017-11-24 2018-06-19 苏州中拓专利运营管理有限公司 A kind of reinforcing chip debarring process
CN108544364A (en) * 2018-05-24 2018-09-18 镇江金莱宝光电有限公司 A kind of sapphire stereo omnibearing formula grinding device
CN110561264A (en) * 2019-10-10 2019-12-13 吴信任 Crystal bar outer diameter grinding equipment for semiconductor components and parts
CN111390750A (en) * 2020-03-25 2020-07-10 福建北电新材料科技有限公司 Wafer surface processing device
CN112757152A (en) * 2020-12-31 2021-05-07 福建省将乐县长兴电子有限公司 Wafer grinding device

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